【図面の簡単な説明】[Brief explanation of the drawing]
第１図は、この考案の第１の実施例の構成を示
す断面図、第２図Ａ，Ｂは、この考案の第１の実
施例において基体に対して集電体端子及び抵抗体
端子を取付けた状態を示す。それぞれ平面図及び
ＡのＡ―Ａ断面図、第３図Ａ，Ｂは、この考案の
第１の実施例において基体に対して集電体端子及
び抵抗体端子を取付け、さらに集電体電極及び抵
抗体電極を形成した状態を示す、それぞれ平面図
及びＡのＢ―Ｂ断面図、第４図Ａ，Ｂは、この考
案の第１の実施例において、基体に対して集電体
端子、抵抗体端子を取付け、集電体電極抵抗体電
極を形成し、さらに抵抗体を形成した状態を示す
、それぞれ平面図及びＡのＣ―Ｃ断面図、第５図
は、この考案の第１の実施例に用いるカバーの構
成を示す斜視図、第６図は、この考案の第２の実
施例の構成を示す断面図、第７図は、この考案の
第３の実施例の構成を示す断面図、第８図Ａ，Ｂ
はそれぞれこの考案の第３の実施例に使用する基
体の構成を示す斜視図、第９図Ａ，Ｂはそれぞれ
この考案の第１及び第２の実施例における集電体
電極及び抵抗体電極の転写に使用する転写体及び
抵抗体の転写に使用する転写体の構成を示す斜視
図、第１０図Ａ，Ｂは従来使用されている、抵抗
体電極間に抵抗体が形成され、金属端子が取付け
られた絶縁基板の構成を示すそれぞれ平面図及び
ＡのＤ―Ｄ断面図、第１１図は、第１０図の絶縁
基板に側壁を形成した構成を示す、それぞれ平面
図及びＡのＥ―Ｅ断面図、第１２図は、従来使用
されている集電体及び抵抗体が形成された絶縁基
板の構成を示す平面図、第１３図は、この考案の
第３の実施例における集電体端子に対する集電体
電極の形成状態を示す断面図、第１４図は、この
考案の第３の実施例における抵抗端子及び抵抗体
電極に対する抵抗体の形成状態を示す断面図、第
１５図は、この考案によりチツプ形可変抵抗器を
構成した場合の要部の構成を示す断面図である。
１１：絶縁基板、１２：集電体、１３：抵抗体
電極、１６：抵抗体、１８：側壁、１９：ケース
、２０：金属端子、２２：基部、２３：側壁、２
４：基体、２５：集電体端子、２６：露出部、２
７：抵抗端子、２８：露出部、３０：表面、３２
：抵抗体電極、３３：集電体電極、３５：転写体
、３８：抵抗体、４０：摺動子、４１：回転体、
４２：カバー、４７：突片、４８：ストツパ、５
１：係合軸。
FIG. 1 is a cross-sectional view showing the structure of the first embodiment of this invention, and FIGS. 2A and 2B show how the current collector terminal and resistor terminal are connected to the base in the first embodiment of this invention. Shown installed. The plan view, A--A sectional view of A, and FIGS. 3A and 3B respectively show the first embodiment of this invention in which a current collector terminal and a resistor terminal are attached to a base, and a current collector electrode and a resistor terminal are attached to a base. FIGS. 4A and 4B, which are a plan view and a BB-B cross-sectional view of A, respectively, show the state in which the resistor electrodes are formed. A plan view and a cross-sectional view taken along line C--C in A, respectively, showing the state in which body terminals are attached, current collector electrodes and resistor electrodes are formed, and a resistor is formed, respectively, and FIG. 5 shows the first implementation of this invention. FIG. 6 is a sectional view showing the structure of a second embodiment of this invention; FIG. 7 is a sectional view showing the structure of a third embodiment of this invention. , Figure 8 A, B
9A and 9B are perspective views showing the structure of the base used in the third embodiment of this invention, respectively, and FIGS. 9A and 9B show the current collector electrode and resistor electrode in the first and second embodiments of this invention, respectively. FIGS. 10A and 10B are perspective views showing the structure of a transfer body used for transfer and a transfer body used for transfer of a resistor, which are conventionally used, in which a resistor is formed between resistor electrodes and a metal terminal FIG. 11 is a plan view and a sectional view taken along the line D-D in A showing the structure of the attached insulating substrate, respectively, and FIG. 12 is a cross-sectional view, and FIG. 12 is a plan view showing the structure of an insulating substrate on which a conventionally used current collector and resistor are formed. FIG. 13 is a current collector terminal in a third embodiment of this invention. FIG. 14 is a cross-sectional view showing how the resistor terminal and resistor electrode are formed in the third embodiment of the invention, and FIG. FIG. 3 is a cross-sectional view showing the configuration of main parts when a chip type variable resistor is constructed according to the invention. 11: Insulating substrate, 12: Current collector, 13: Resistor electrode, 16: Resistor, 18: Side wall, 19: Case, 20: Metal terminal, 22: Base, 23: Side wall, 2
4: Base, 25: Current collector terminal, 26: Exposed part, 2
7: Resistance terminal, 28: Exposed part, 30: Surface, 32
: Resistor electrode, 33: Current collector electrode, 35: Transfer body, 38: Resistor, 40: Slider, 41: Rotating body,
42: Cover, 47: Projection piece, 48: Stopper, 5
1: Engagement shaft.