JPS62154736A - Dry etching - Google Patents
Dry etchingInfo
- Publication number
- JPS62154736A JPS62154736A JP29272085A JP29272085A JPS62154736A JP S62154736 A JPS62154736 A JP S62154736A JP 29272085 A JP29272085 A JP 29272085A JP 29272085 A JP29272085 A JP 29272085A JP S62154736 A JPS62154736 A JP S62154736A
- Authority
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- Prior art keywords
- etching
- reaction container
- dry etching
- reaction vessel
- ozone
- Prior art date
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Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、ドライエツチング方法に係υ、%にドライエ
ツチング後、反応容器内に残在する有害物質を除去しエ
ツチングの精度を高め、また人体に対する毒性の少ない
ドライエツチング方法に関する。[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a dry etching method. This invention relates to a dry etching method that is less toxic to humans.
LSIや薄膜デバイス、金属膜の加工にドライエツチン
グ法が広く用いられている。ドライエツチングの反応ガ
スとしては、反応生成物が高い蒸気圧を有して気散しや
すくするため炭素、イオウ。Dry etching is widely used for processing LSIs, thin film devices, and metal films. Carbon and sulfur are used as reaction gases for dry etching because the reaction products have high vapor pressure and are easily dispersed.
窒素、ホウ素等のノ・ロゲン化物が用いられることが多
い。しかしエツチング後には反応容器内に反応中間生成
物配が残在したシ付着したりし、これが次のエツチング
の精度や再現性を低下させたシ、また作業者の安全衛生
上有害となっている。この対策として、従来エツチング
後、反応容器に酸素ガスを流入し高周波印加する所謂「
酸素プラズマ処理方式」が知られている。しかしこの方
法は効果が不充分で有害物質を全て取り除くことはでき
ない。Nitrogen compounds such as nitrogen and boron are often used. However, after etching, reaction intermediate products may remain in the reaction vessel and adhere to them, which reduces the accuracy and reproducibility of the next etching and is harmful to the safety and health of workers. . Conventionally, as a countermeasure against this, after etching, oxygen gas is introduced into the reaction vessel and high frequency is applied.
"Oxygen plasma treatment method" is known. However, this method is insufficiently effective and cannot remove all harmful substances.
なお、例えばソリッドステートテクノロジ(5olid
5tate Technology) /日本版/Q
ctober、 1983 にはこの棟の方法が示さ
れている。In addition, for example, solid state technology (5solid
5tate Technology) /Japanese version/Q
This method is described in Ctober, 1983.
本発明の目的は、ドライエツチング後、反応容器内に残
在する有害物質を効率よく除去し、エツチング精度を向
上させる方法、及びその機構全盲するドライエツチング
方法を提供することにある。It is an object of the present invention to provide a method for efficiently removing harmful substances remaining in a reaction vessel after dry etching and improving etching accuracy, and a dry etching method that completely blinds the mechanism.
本発明の特徴は、ドライエツチング後、反応容器内に残
在する有害物質を除去する手段としてrUV−オゾン処
理」することにある。rUV−オゾン処理」は、反応容
器内に酸素ガスを流入して紫外光を照射することにより
発生するオゾンや発生期の酸素の強力な酸化作用を用い
て、反応中間生成物の有害物質を酸化分解する方法であ
る。A feature of the present invention is that after dry etching, rUV-ozone treatment is performed as a means to remove harmful substances remaining in the reaction vessel. rUV-ozone treatment oxidizes harmful substances in reaction intermediate products using the strong oxidizing effect of ozone and nascent oxygen generated by flowing oxygen gas into a reaction vessel and irradiating it with ultraviolet light. This is a method of decomposition.
以下、本発明の方法を用いて実施する実施例について説
明する。Examples implemented using the method of the present invention will be described below.
実施例1.LSIプロセスにおける配線用のAt膜のエ
ツチング例を説明する。第2図(a)において、21は
ダイオード、トランジスタなどの回路素子が作り込まれ
たシリコン半導体基板、22は5fOz膜、23はSi
O*膜22上22上にスパッタ法によシ形成したAt膜
、24はAt膜23を所定のパターン加工するためのホ
トレジストマスクを示す。At膜23の異方性エツチン
グ法として、第1図に示す平行平板ドライエツチング装
置1を用いた。第2図(a)に示す試料20を、水冷さ
れた陰極兼サセプタ10に設置し、反応容器2内を、真
空ポンプ3により真空排気し、トラップ4に液体窒素を
導入した。反応ガスとしてCCl2.。Example 1. An example of etching an At film for wiring in an LSI process will be explained. In FIG. 2(a), 21 is a silicon semiconductor substrate in which circuit elements such as diodes and transistors are built, 22 is a 5fOz film, and 23 is a Si
An At film is formed on the O* film 22 by sputtering, and 24 is a photoresist mask for processing the At film 23 into a predetermined pattern. As an anisotropic etching method for the At film 23, a parallel plate dry etching apparatus 1 shown in FIG. 1 was used. A sample 20 shown in FIG. 2(a) was placed in a water-cooled cathode/susceptor 10, the inside of the reaction vessel 2 was evacuated by the vacuum pump 3, and liquid nitrogen was introduced into the trap 4. CCl2. as a reaction gas. .
流量L Qcc/min 、 He 、流量5cc/m
fnの混合ガスを反応容器2内に流入した。真空ポンプ
3により反応容器2内の圧力を5Paに一定にして、高
周波電源11よシ、周波数13.56MHz。Flow rate L Qcc/min, He, flow rate 5cc/m
A mixed gas of fn was flowed into the reaction vessel 2. The pressure inside the reaction vessel 2 was kept constant at 5 Pa by the vacuum pump 3, and the frequency was 13.56 MHz by the high frequency power source 11.
出力100Wffi印加して、リアクティブイオンエツ
チング法CRIE法)によシ、レジスト24全マスクと
してAt膜23をエツチングした。その結果第2図山)
に示す断面形状が得られる。しかし反応ガスにCCl2
を用いたエツチング過程では、ClC14、C* Ct
a 等のCxC1yで示される有機物質が反応中間生成
物として生成され、反応容器2内に残在する。これらの
残在した反応中間生成物は、エツチングの精度、再現性
を悪くするものであシ、これらを防止するためには、頻
繁に装置を洗浄することが必要である。また残在した有
機物質は、悪臭を放ち、人体に対する毒性あるいは発が
ん性があシ、洗浄時には、特に注意が必要である。次に
これらの残在した反応生成物を除去する方法として、r
UV−オゾン処理」を実施した。Applying an output of 100 Wffi, the At film 23 was etched using the entire resist 24 as a mask by reactive ion etching (CRIE method). As a result, Figure 2)
The cross-sectional shape shown in is obtained. However, CCl2 in the reaction gas
In the etching process using ClC14, C*Ct
An organic substance represented by CxC1y such as a is produced as a reaction intermediate product and remains in the reaction vessel 2. These remaining reaction intermediate products impair etching accuracy and reproducibility, and in order to prevent these, it is necessary to frequently clean the apparatus. In addition, the remaining organic substances emit a foul odor and may be toxic or carcinogenic to the human body, so special care must be taken when cleaning. Next, as a method for removing these remaining reaction products, r
UV-ozone treatment" was carried out.
ドライエツチング装置1は、高純度石英窓6と紫外線発
光用の低圧水銀ランプ5を有し、陽極7は、可動式で左
右に移動でき、サセプタ10上に紫外光が直接照射でき
る。エツチング後、反応容器2内に0!ガスを8より常
圧になるまで流入した後、低圧水銀ランプ5よシ波長2
537^光の約10係の紫外光を高純度石英窓6全通し
て反応容器2内に照射する。この結果次式により
0、1849AO+0
一一一一一−−÷
0+0!→Os
O,シュ込O叫0゜
酸化力の強いオゾン(0,)や発生期の酸素(0”)が
生成する。O″′やO8の強化な酸化作用によシ残存物
が酸化分解され、Cot、CLが生成され9より排気す
る。さらにホトレジスト24もO“や03により分解除
去される。かくしてrUV−オゾン処理」により、反応
容器内が洗浄され、エツチング精度、再現性が優れると
ともに、ホトレジスト24全除去する工程の簡略化、さ
らに装置洗浄時、人体に有害な物質にさらされることが
なくなシ、安全性が向上した。The dry etching apparatus 1 has a high-purity quartz window 6 and a low-pressure mercury lamp 5 for emitting ultraviolet light, and the anode 7 is movable and can be moved left and right, so that ultraviolet light can be directly irradiated onto the susceptor 10. After etching, there is 0 in the reaction vessel 2! After the gas has flowed in from 8 to normal pressure, the low pressure mercury lamp 5 has a wavelength of 2.
Ultraviolet light of about 10 parts of 537^ light is irradiated into the reaction vessel 2 through the entire high purity quartz window 6. As a result, according to the following formula, 0, 1849AO+0 11111−÷0+0! →Os O, shukomi O scream 0゜Ozone (0,) with strong oxidizing power and nascent oxygen (0'') are generated.Oxidized residues are oxidized and decomposed by the strong oxidizing action of O'' and O8. Cot and CL are generated and exhausted from 9. Furthermore, the photoresist 24 is also decomposed and removed by O" and 03.Thus, the inside of the reaction vessel is cleaned by the rUV-ozone treatment, which not only improves etching precision and reproducibility, but also simplifies the process of completely removing the photoresist 24. During cleaning, the human body is no longer exposed to harmful substances, improving safety.
実施例ZLSIプロセスにおける絶縁膜、パツーシベー
ション膜として用いられる5iotvのプラスマエッチ
ング例を説明する。第3図(a)において、31は3i
基板、32はSi基板31上に熱酸化によシ形成した8
:Ot膜、33はSiO□膜を所定のパターンに加工す
るホトレジストマスクを示す。EXAMPLE An example of plasma etching of 5iotv used as an insulating film and a passivation film in the ZLSI process will be described. In Figure 3(a), 31 is 3i
The substrate 32 is formed by thermal oxidation on the Si substrate 31.
:Ot film; 33 indicates a photoresist mask for processing the SiO□ film into a predetermined pattern.
5hot膜の等方性エツチング法として第1図に示すド
ライエツチング装置1全用いた。反応容器2内の、7.
10両電極の極性を換え、7を陰極、10を陽極とした
。第3図(a)K示す試料30を水冷された陽極兼サセ
プタ10に設置し、真空ポンプ3によυ反応容器2内を
真空排気しトラップ4に液体窒*’を導入した。反応ガ
スとして、CHF5 。The entire dry etching apparatus 1 shown in FIG. 1 was used for isotropic etching of the 5-hot film. 7. in the reaction vessel 2;
The polarity of both electrodes 10 was changed, and 7 was used as a cathode and 10 was used as an anode. A sample 30 shown in FIG. 3(a)K was placed in a water-cooled anode/susceptor 10, and the inside of the υ reaction vessel 2 was evacuated by the vacuum pump 3, and liquid nitrogen *' was introduced into the trap 4. CHF5 as reaction gas.
流jt20 cc/min XHe + (kig L
Occ/mi nの混合ガスを反応容器2内に流入し
、真空ポンプ3によシ反応容器2内の圧力Th200
Paに一定にして、高周波電源11よシ周波数13.6
6MH2゜出力100W’を印加して、プラズマエツチ
ング法により、レジスト33をマスクとして、5lot
膜32をエツチングした。その結果第3図(b)に示す
断面形状が得られる。この後、反応容器2内に残在する
反応生成物を除去するために、実施例IK記述したrU
V−オゾン処理」を実施した結果、反応容器2内が洗浄
され、エツチング精度、再現性が優れるとともに、ホト
レジスト33が[−サれ、人体に有害な物質にさらされ
ることがなくなシ安全性が向上した。Flow jt20 cc/min XHe + (kg L
A mixed gas of Occ/min is introduced into the reaction vessel 2, and the pressure inside the reaction vessel 2 is reduced to Th200 by the vacuum pump 3.
With the Pa constant, the frequency of the high frequency power source 11 is 13.6.
Applying a 6MH2° output of 100 W', 5 lots were etched using the resist 33 as a mask by plasma etching.
The membrane 32 was etched. As a result, the cross-sectional shape shown in FIG. 3(b) is obtained. After this, in order to remove the reaction products remaining in the reaction vessel 2, the rU
As a result of carrying out "V-ozone treatment", the inside of the reaction vessel 2 is cleaned, and the etching accuracy and reproducibility are excellent, and the photoresist 33 is not exposed to substances harmful to the human body, resulting in safety. improved.
実施例3.第3図に示す試料30において、レジスト3
3をマスクとした5ift膜32の反応性イオンビーム
エツチング例を説明する。反応性イオンビームエツチン
グ法として、第4図に示すドライエツチング装置40を
用いた。ドライエツチング装[i40は、反応容器2上
に、無電極かつ低ガス圧でプラズマ生成可能な電子サイ
クロトロン共鳴(ECR)イオン源、かつ反応容器2上
面には、高純度石英窓6と紫外線発光用の低圧水銀ラン
プ5を有している。試料30全、接地した水冷サセプタ
10上に設置し、反応容器2内を真空ポンプ3によυ真
空排気しトラップ4に液体窒素を導入した。反応ガスと
してC6F6.流ii 50 cc/minを8よシイ
オン化室12に流入し、真空ポンプ3によシイオン化室
12内圧力を、lXl0−”paに一定にした。この時
の反応容器2内圧力は、5X10−8Paになる。次に
マグネトロン13から供給した周波数2..450H2
のマイクロ波とマグネットコイル14からの磁界の共存
中でイオン化室12内に、電子サイクロトロン共鳴プラ
ズマを発生させた後、引出し電極15に電圧500vを
印加して、イオンビームを引出し、試料30表面に入射
させる反応性イオンビームエツチング法(RIBE法)
によシ、レジスト33をマスクとしてSjO!膜32全
32チングした。その結果第3図(C)に示す断面形状
が得られるっこの後、反応容器2内に残在する反応生成
物を除去するために、実施例1に記述したrUV−オゾ
ン処理」を実施した結果、反応容器2内が洗浄され、エ
ツチング精度、再現性が優れるとともに、ホトレジスト
33が除去され、人体に有害な物質にさらされることが
なくなシ安全性が向上した。Example 3. In the sample 30 shown in FIG.
An example of reactive ion beam etching of the 5ift film 32 using No. 3 as a mask will be described. A dry etching apparatus 40 shown in FIG. 4 was used for the reactive ion beam etching method. Dry etching equipment [i40 is equipped with an electron cyclotron resonance (ECR) ion source on the reaction vessel 2 that can generate plasma without electrodes and at low gas pressure, and on the top of the reaction vessel 2, there is a high-purity quartz window 6 and a window for ultraviolet light emission. It has a low pressure mercury lamp 5. All of the samples 30 were placed on a grounded water-cooled susceptor 10, the inside of the reaction vessel 2 was evacuated by the vacuum pump 3, and liquid nitrogen was introduced into the trap 4. C6F6. as a reaction gas. A flow of 50 cc/min 8 was introduced into the ionization chamber 12, and the pressure inside the ionization chamber 12 was kept constant at 1X10-''pa by the vacuum pump 3. At this time, the pressure inside the reaction vessel 2 was 5X10 -8 Pa.Next, the frequency 2..450H2 supplied from the magnetron 13
After generating an electron cyclotron resonance plasma in the ionization chamber 12 under the coexistence of the microwave and the magnetic field from the magnet coil 14, a voltage of 500 V is applied to the extraction electrode 15 to extract the ion beam and apply it to the surface of the sample 30. Reactive ion beam etching method (RIBE method)
Good luck, SjO using resist 33 as a mask! A total of 32 membranes were coated. As a result, the cross-sectional shape shown in FIG. 3(C) was obtained.After this, in order to remove the reaction products remaining in the reaction vessel 2, the rUV-ozone treatment described in Example 1 was carried out. As a result, the inside of the reaction vessel 2 was cleaned, and the etching accuracy and reproducibility were excellent, and the photoresist 33 was removed, so that the human body was not exposed to substances harmful to the body, and safety was improved.
実施例t 第1図に示すドライエツチング装置1を用い
た、Siの光励起゛エツチング例を説明する。Example t An example of optically excited etching of Si using the dry etching apparatus 1 shown in FIG. 1 will be described.
第5図において51は3i基板、52はSi基板51を
所定のパターンに加工するSiO□膜マスクを示す。S
i基板51の光エツチング法として、第4図(a) K
示す試料50を、接地、かつ150℃に加熱したサセプ
タ10上に設置し、反応容器2内を真空ポンプ3によシ
真空排気し、トラップ4に液体窒素を導入した。陽極7
をサセプタ10上に紫外光を直接照射できるよう移動し
た。反応ガスとして、CIC2Fs 、流量5 Q c
c/ rnt n 、 O! *流11i50 cc/
minの混合ガス及び増感剤として作用するHgの蒸気
を8よシ、反応容器2内に流入し、真空ポンプ3によシ
反応容器2内を370paに一定にした後、低圧水銀ラ
ンプ5よシ実施例1に記述した、波長、出力の紫外光を
高純度石英窓6を通して反応容器2内に照射する。この
結果次式によりエッチャントでおるCt”、F“が生成
する。In FIG. 5, reference numeral 51 indicates a 3i substrate, and reference numeral 52 indicates an SiO□ film mask for processing the Si substrate 51 into a predetermined pattern. S
As a photoetching method for the i-substrate 51, FIG. 4(a) K
The sample 50 shown was placed on a susceptor 10 that was grounded and heated to 150° C., the inside of the reaction vessel 2 was evacuated by the vacuum pump 3, and liquid nitrogen was introduced into the trap 4. Anode 7
was moved so that ultraviolet light could be directly irradiated onto the susceptor 10. As a reaction gas, CIC2Fs, flow rate 5 Q c
c/rntn, O! *Flow 11i50 cc/
A mixed gas of 10 min and Hg vapor that acts as a sensitizer flow into the reaction vessel 2, and after the vacuum pump 3 maintains the pressure inside the reaction vessel 2 at a constant pressure of 370 pa, a low-pressure mercury lamp 5 Ultraviolet light having the wavelength and output described in Example 1 is irradiated into the reaction vessel 2 through the high-purity quartz window 6. As a result, etchants Ct'' and F'' are generated according to the following equation.
v
Ct CtF s + Ot−→2COz+C6”+3
F”BiとCt” F%が反応して、揮発性のs 1c
tx。v Ct CtF s + Ot-→2COz+C6”+3
F"Bi and Ct" F% react to form volatile s 1c
tx.
5ipxとなシ9よす排気する。その結果第4図(b)
に示す断面形状が得られる。この後、反応容器2内に残
在する反応生成物を除去するために、実施例1に記述し
たrUV−オゾン処理」を5s、施した結果、反応容器
2内が洗浄され、エツチング精度、p+現性が優れると
ともに、人体に有害な物質にさらされることがなくなシ
安全性が向上した。。5ipx and 9 yosu exhaust. As a result, Figure 4(b)
The cross-sectional shape shown in is obtained. After that, in order to remove the reaction products remaining in the reaction vessel 2, the rUV-ozone treatment described in Example 1 was performed for 5 seconds, and as a result, the inside of the reaction vessel 2 was cleaned, and the etching accuracy and p+ In addition to being highly effective, it also eliminates exposure to substances harmful to the human body, improving safety. .
以上、詳述したように、ruv Os クリーニン
グ」後処理機能は、反応性イオンエツチング、プラズマ
エツチング、反応性イオンビームエツチング、光励起エ
ツチングのいずれに対してもエツチング後の反応容器内
の洗浄法として有効であることが判った。As detailed above, the RUV Os Cleaning post-processing function is effective as a method for cleaning the inside of the reaction vessel after etching for any of reactive ion etching, plasma etching, reactive ion beam etching, and photoexcitation etching. It turned out to be.
本発明によれば、「Uv−オゾン処理」によりドライエ
ツチング後の反応容器内を清浄化できる。According to the present invention, the inside of the reaction vessel after dry etching can be cleaned by "Uv-ozone treatment".
このため、1)エツチングのロット間の再現性が従来例
±18チから±4優に向上した。さらに2)有讐物質が
分解除去され悪臭がなくなり、反応生成物が検出限界以
下となシ人体安全性が向上できる。3) rUV−オ
ゾン処理」によシ、ホトレジストの除去も同時に実施で
き、工程の簡略化ができる効果もある。For this reason, 1) the lot-to-lot reproducibility of etching was improved from ±18 inch in the conventional example to well over ±4 inch; Furthermore, 2) toxic substances are decomposed and removed, odor is eliminated, and reaction products are below the detection limit, improving human safety. 3) By using "rUV-ozone treatment", the photoresist can be removed at the same time, which has the effect of simplifying the process.
第1図、第4図は本発明のドライエツチング方法を用い
た一実施例を示すドライエツチング装置の模式図、第2
図、第3図、第5図はドライエツチングに供するサンプ
ルの断面模式図である。
2・・・反応容器、5・・・低圧水銀ランプ、6・・・
高純度石英窓、8・・・ガス供給系、9・・・ガス排気
系、10・・・サセプタ。1 and 4 are schematic diagrams of a dry etching apparatus showing an embodiment using the dry etching method of the present invention, and FIG.
3 and 5 are schematic cross-sectional views of samples to be subjected to dry etching. 2... Reaction container, 5... Low pressure mercury lamp, 6...
High purity quartz window, 8... gas supply system, 9... gas exhaust system, 10... susceptor.
Claims (1)
起することにより基板をドライエッチングした後、反応
容器内に酸素ガスを流入して、紫外線照射することによ
り発生するオゾンや発生期の酸素を用いた強力な酸化洗
浄することを特徴とするドライエッチング方法。1. Place the substrate in a reaction container, dry-etch the substrate by injecting and exciting a reaction gas, and then flow oxygen gas into the reaction container and irradiate it with ultraviolet rays to generate ozone and the generation period. A dry etching method characterized by strong oxidation cleaning using oxygen.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29272085A JPS62154736A (en) | 1985-12-27 | 1985-12-27 | Dry etching |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29272085A JPS62154736A (en) | 1985-12-27 | 1985-12-27 | Dry etching |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62154736A true JPS62154736A (en) | 1987-07-09 |
Family
ID=17785440
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP29272085A Pending JPS62154736A (en) | 1985-12-27 | 1985-12-27 | Dry etching |
Country Status (1)
Country | Link |
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JP (1) | JPS62154736A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63108723A (en) * | 1986-10-27 | 1988-05-13 | Semiconductor Energy Lab Co Ltd | Apparatus and method for treating substrate surface |
JPH0325934A (en) * | 1989-06-23 | 1991-02-04 | Nec Corp | Method for removal of halogen containing layer adsorbed onto solid surface |
EP0553469A2 (en) * | 1992-01-27 | 1993-08-04 | Siemens Aktiengesellschaft | Plasma-etching process for the rapid and damage-free cleaning of reaction chambers and principally in the deposition or etching of layers on silicon substrats |
US5547642A (en) * | 1994-03-16 | 1996-08-20 | Mitsubishi Denki Kabushiki Kaisha | Light ozone asher, light ashing method, and manufacturing method of semiconductor device |
KR100666380B1 (en) | 2005-05-30 | 2007-01-09 | 삼성전자주식회사 | Method of removing photoresist and method of manufacturing a semiconductor device using the same |
WO2011056194A3 (en) * | 2009-10-28 | 2011-07-21 | Lam Research Corporation | Quartz window for a degas chamber |
-
1985
- 1985-12-27 JP JP29272085A patent/JPS62154736A/en active Pending
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63108723A (en) * | 1986-10-27 | 1988-05-13 | Semiconductor Energy Lab Co Ltd | Apparatus and method for treating substrate surface |
JPH0325934A (en) * | 1989-06-23 | 1991-02-04 | Nec Corp | Method for removal of halogen containing layer adsorbed onto solid surface |
EP0553469A2 (en) * | 1992-01-27 | 1993-08-04 | Siemens Aktiengesellschaft | Plasma-etching process for the rapid and damage-free cleaning of reaction chambers and principally in the deposition or etching of layers on silicon substrats |
EP0553469A3 (en) * | 1992-01-27 | 1994-11-23 | Siemens Ag | Plasma-etching process for the rapid and damage-free cleaning of reaction chambers and principally in the deposition or etching of layers on silicon substrats |
US5547642A (en) * | 1994-03-16 | 1996-08-20 | Mitsubishi Denki Kabushiki Kaisha | Light ozone asher, light ashing method, and manufacturing method of semiconductor device |
KR100666380B1 (en) | 2005-05-30 | 2007-01-09 | 삼성전자주식회사 | Method of removing photoresist and method of manufacturing a semiconductor device using the same |
WO2011056194A3 (en) * | 2009-10-28 | 2011-07-21 | Lam Research Corporation | Quartz window for a degas chamber |
CN102598210A (en) * | 2009-10-28 | 2012-07-18 | 朗姆研究公司 | Quartz window for a degas chamber |
US8603292B2 (en) | 2009-10-28 | 2013-12-10 | Lam Research Corporation | Quartz window for a degas chamber |
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