JPS62149870A - Vapor deposition device - Google Patents

Abstract

PURPOSE:To form a good thin vapor-deposited film on the surface of a substrate having a stepped part by rotating a substrate installing base for installation of the substrate for vapor deposition by means of a universal joint and applying the precession to the substrate installing base cooperatively with the rotation thereof. CONSTITUTION:A substrate revolving shaft 13 and a revolving cylindrical shaft 14 for precession are actuated via gears 15, 16 by the revolution of a motor 17. The rotation of the shaft 13 rotates the substrate installing base 11 at a certain angular frequency. The rotation of the shaft 14 applies the circular motion around the shaft 14 to a tilting arm 18. This circular motion takes place at the angular frequency different from the circular motion of the base 11 itself along an annular groove 21 provided to the bottom surface of the base 11 to simultaneously apply the rotating motion and vertical moving motion to the base 11, thus generating the precession. The vapor deposition material coming from a heater 5 for vapor deposition is thereby made incident on various parts on the surface of the substrate 22 at various angles and the flying angles effective for the step part thereof are periodically provided thereto. The thin vapor-deposited film having the uniform film thickness is thus formed on the surface of the substrate 22.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、Ｓｉ、ＧａＡｓ等から成る半導体装置の製造
時などに使用される蒸着装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a vapor deposition apparatus used for manufacturing semiconductor devices made of Si, GaAs, etc.

従来の技術 蒸着薄膜の形成技術は、８１半導体分野における電極形
成、マスク用絶縁蒲脱形成、あるいはパッシベーション
膜形成等をはじめとして、レンズ、反射鏡上への光学薄
膜形成等極めて広い範囲にわたって利用されている技術
である。蒸着薄膜形成技術において蒸ｒ：１膜の膜厚の
均一化、および段差基板上のｇＦ差部での良好な蒸着薄
膜の形成は重要な課題である。Conventional technology Vapor-deposited thin film formation technology is used in an extremely wide range of applications, including the formation of electrodes in the 81 semiconductor field, the formation of insulating layers for masks, and the formation of passivation films, as well as the formation of optical thin films on lenses and reflective mirrors. It is a technology that In vapor deposited thin film formation technology, it is important to make the film thickness of the vaporized r:1 film uniform and to form a good vapor deposited thin film at the gF difference portion on the stepped substrate.

従来、蒸着薄膜の膜厚の均一化をはかる手法として、蒸
着ソース源からの蒸着物質の蒸着基板面上への飛来量を
場所的、時間的に平均化するために、蒸着基板を回転さ
せる手法が最も多く用いられてきた。上記手法の概要を
第２図により説明する。真空ペルジャ−１の内部に設け
られた基板設置台２は真空ペルジャー１の外部に設けら
れた回転闘構３により真空ペルジャー１内部で回転する
ように構成されている。従って基板設置台２の上にセッ
トれた被蒸着基板４は基板設置台２と共に回転しながら
、蒸着用ヒータ部５からの蒸着物質を堆積することにな
る。すなわち、蒸着ヒータ部５から飛来ブる蒸着物質の
空間的な不均一性を基板の回転による場所的変動により
均一化を計っている。Conventionally, as a method for making the thickness of a deposited thin film uniform, a method of rotating the deposition substrate in order to average the amount of the deposition material flying from the deposition source onto the deposition substrate surface in terms of location and time. has been used most often. An overview of the above method will be explained with reference to FIG. A substrate installation stand 2 provided inside the vacuum pelger 1 is configured to rotate within the vacuum pelger 1 by a rotating mechanism 3 provided outside the vacuum pelger 1. Therefore, the substrate 4 to be evaporated set on the substrate setting table 2 rotates together with the substrate setting table 2, and the vapor deposition material from the vapor deposition heater part 5 is deposited thereon. That is, the spatial non-uniformity of the vapor deposition material flying from the vapor deposition heater section 5 is made uniform by the spatial variation caused by the rotation of the substrate.

発明が解決しようとする問題点 上述した蒸着薄膜の膜厚の均一化手法では蒸着薄膜の膜
厚均一性は確保されるとしても、例えば５ｉ−ＩＣ等で
しばしばみられる段差をもつ基板上への蒸着に際しては
、段差部への蒸着は第３図で模式図的に示した如く、被
蒸着基板４の段差部６の陰の部分には蒸着物質が飛来せ
ず、また、蒸着物質の飛来方向に平行に近い面は殆ど堆
積しないといった難点があり、例えば電極蒸着であれば
、段差部での配線切れ、あるいは膜厚不足による高抵抗
化等の半導体装置にとって致命的な欠陥をもたらすこと
になることがある。Problems to be Solved by the Invention Although the method for making the thickness of the deposited thin film uniform as described above can ensure the uniformity of the thickness of the deposited thin film, it is difficult to apply the thickness uniformity of the deposited thin film to a substrate with a step, which is often seen in, for example, 5i-IC. During vapor deposition, as schematically shown in FIG. 3, the vapor deposition material does not fly to the shadow part of the step part 6 of the substrate 4 to be vapor deposited, and the direction in which the vapor deposition material comes There is a drawback that almost no deposition occurs on surfaces close to parallel to the , and for example, if electrode evaporation is used, this can lead to defects that are fatal to semiconductor devices, such as wire breakage at step portions or high resistance due to insufficient film thickness. Sometimes.

本発明は上記問題点を解決するもので、簡単な手法でも
って、蒸着膜の膜厚均一化は勿論のこと、被蒸着基板面
上の段差部においても良好な蒸着薄膜の形成を図ること
ができる蒸着装置を提供することを目的とするものであ
る。The present invention solves the above-mentioned problems, and uses a simple method to not only make the thickness of the deposited film uniform, but also to form a good deposited thin film even on the stepped portions of the substrate to be deposited. The purpose is to provide a vapor deposition apparatus that can

問題点を解決するための手段 上記問題点を解決するために本発明は、ユニバーサルジ
ヨイントを介して被蒸着基板設置用の基板設置台を回転
させる回転装置と、前記回転装置に連動して前記基板設
置台に才差運動を与える装置とを有する構成にしたもの
で、被蒸着基板の設置台をＩ１１純な回転運動から才差
運妨に変換可能にしたものである。Means for Solving the Problems In order to solve the above-mentioned problems, the present invention provides a rotating device for rotating a substrate mounting table for installing a substrate to be deposited via a universal joint, and This configuration has a device for imparting precession to the substrate mounting table, and is capable of converting the I11 pure rotational movement of the substrate mounting table to precession.

作用 上記構成により、被蒸着基板を蒸む物質の飛来方向に対
して時間的に変動するようないろいろな角度をもたせる
才差運動をおこなわせることができ、従って段差部も含
めた被蒸着基板の全ての面が時間的に変化しながら蒸着
物質にさらされることになり、段差部への蒸着物質の付
着、堆積は容易に行われることになり、例えば電極蒸着
であれば段差部での配線切れ、あるいは膜厚不足による
高抵抗化等の欠陥を防止することができる。Effect: With the above configuration, it is possible to cause the substrate to be evaporated to perform a precession movement that gives various angles that vary over time with respect to the flying direction of the vaporized material, and therefore, the substrate to be evaporated, including the stepped portions, can be precessed. All surfaces will be exposed to the vapor deposition material in a time-varying manner, and the deposition material will easily adhere to and accumulate on the stepped portion.For example, if electrode evaporation is used, wire breakage at the stepped portion may occur. Alternatively, defects such as high resistance due to insufficient film thickness can be prevented.

実施例 以下、本発明の一実施例を図面に基づいて説明する。第
１図において、基板設置台１１はユニバーサルジヨイン
ト１２によって基板回転軸１３と結合されている。また
上記基板回転軸１３の外側に同軸の２差運動用回転筒軸
１４が外嵌され、基板回転軸１３および２差運動用回転
筒軸１４はそれに固定されたそれぞれ回転比の異なる回
転伝達用歯車１５および１６により同一のモータ１７に
よって真空ペルジャー１外から独立に回転できるように
構成されている。EXAMPLE Hereinafter, an example of the present invention will be described based on the drawings. In FIG. 1, a substrate installation stand 11 is coupled to a substrate rotation shaft 13 by a universal joint 12. As shown in FIG. Further, a coaxial rotary cylinder shaft 14 for two-differential motion is fitted on the outside of the substrate rotation shaft 13, and the substrate rotation shaft 13 and the rotary cylinder shaft 14 for two-differential motion are fixed thereto for rotation transmission with different rotation ratios. The gears 15 and 16 are configured so that they can be rotated independently from outside the vacuum pelger 1 by the same motor 17.

２差運動用回転筒軸１４の上部には基板設置台１１を傾
斜状態に保つための傾斜用腕木１８が基板回転軸１３の
外方に突設され、この傾斜用腕木１８の先端部は、基板
設置台１１の下面に設けられた環状溝２１に嵌合し、環
状溝２１に沿って自由に運動出来るようになっている。A tilting arm 18 for keeping the substrate installation stand 11 in an inclined state is provided on the upper part of the rotation cylinder shaft 14 for two-differential motion, protruding outward from the substrate rotation shaft 13, and the tip of this tilting arm 18 is It fits into an annular groove 21 provided on the lower surface of the substrate installation stand 11, and can freely move along the annular groove 21.

この際、真空ベルジ１７−１内部と外部との真空保持は
基板回転軸１３と才差運動用回転簡軸１４の軸間、もし
くは歯車機構部１９全体を真空部に含めてモータ軸２０
と歯車橢構部１９の間で真空保持をはかつている。At this time, the vacuum between the inside and outside of the vacuum verge 17-1 is maintained between the substrate rotating shaft 13 and the precession rotating simple shaft 14, or by including the entire gear mechanism section 19 in the vacuum section and using the motor shaft 20.
A vacuum is maintained between the gear structure 19 and the gear structure 19.

上記の装置による基板設置台１１の運動は次の通りであ
る。まず、モータ１７を回転させるとモータ軸２０に固
定されている２１１の歯車を通して基板回転軸１３およ
び才差運肋用回転筒軸１４にその動力は伝達され、基板
回転軸１３の回転は基板設置台１１をある角周波数で回
転せしむると同時に、２差運動用回転筒軸１４の回転は
傾斜用腕木１８に２差運動用回転筒軸１４を中心軸とし
た円運動を与えることになり、この傾斜用腕木１８の円
３ｉ！動は基板設置台１１の下面に設けられた環状溝２
１に沿って基板設置台１１自体の回転運動と異なった角
周波数で運動するため、結果として基板設置台１１はあ
る周波数の回転運動と、周波数の異なった上下運動を同
時に与えられることになり、才差運動を起す。従って基
板設置台１１上に設置された段差部をもつ被蒸着基板２
２は基板設置台１１と全く同じ運動をすることになる。The movement of the substrate mounting table 11 by the above device is as follows. First, when the motor 17 is rotated, the power is transmitted to the substrate rotating shaft 13 and the precession rotating tube shaft 14 through the gear 211 fixed to the motor shaft 20, and the rotation of the substrate rotating shaft 13 is transmitted to the substrate At the same time as the table 11 is rotated at a certain angular frequency, the rotation of the rotary cylinder shaft 14 for two-difference motion gives the tilt arm 18 a circular motion about the rotary cylinder shaft 14 for two-difference motion. , circle 3i of this tilt arm 18! The movement is an annular groove 2 provided on the bottom surface of the board installation stand 11.
1 at a different angular frequency from the rotational movement of the substrate installation stand 11 itself, as a result, the substrate installation stand 11 is simultaneously given rotational movement at a certain frequency and vertical movement at a different frequency. Causes precession. Therefore, the substrate 2 to be evaporated with a stepped portion is placed on the substrate installation stand 11.
2 moves in exactly the same way as the board installation stand 11.

この状態で真空ベルジ↑？−１内のＭ−？ｆｆｆｆ用タ
ー９から飛来する蒸着物質は被蒸着基板２２面上の各部
にいろいろな角度をもって入射することになり、段差部
に対しても有効な飛来角度を周期的に与えることが可能
になる。Vacuum verge ↑ in this state? M- in -1? The vapor deposition material flying from the ffff tar 9 will be incident on various parts of the surface of the substrate 22 to be vapor deposited at various angles, and it becomes possible to periodically give effective flying angles even to the step portions.

なお、本実施例は蒸着ヒータ部を上部に、被蒸着基板を
下部に設置した構成で説明を行ってきたが、被蒸着基板
を上部に構成しても、また、本実施例の如き蒸着ヒータ
部を抵抗加熱でなく、電子ビーム、スパッター等におい
ても利用出来る。Note that this embodiment has been described with a configuration in which the evaporation heater section is installed at the top and the substrate to be evaporated is installed at the bottom, but even if the substrate to be evaporated is configured at the top, the evaporation heater like this example The part can be used not only by resistance heating but also by electron beam, sputtering, etc.

光明の効果 以上、本発明によれば、蒸着装置における被蒸着基板を
２差運動せしむることにより、従来の装置と同梯に蒸着
源の膜厚の均一化を保ちながら、被Ｍ者基板面上の各種
の段差部にも蒸着源の極端な薄層化や、膜切れを起すこ
となく、良好な蒸着膜を形成をすることができ、例えば
電極蒸着であれば、膜切れによる段差部での配線切れ、
あるいは膜厚不足による高抵抗化等の欠陥を防止するこ
とかできる。As described above, according to the present invention, by performing two-differential motion on the substrate to be deposited in the evaporation apparatus, the deposition target substrate can be moved while maintaining the same level of uniformity of the film thickness of the evaporation source as in the conventional apparatus. It is possible to form a good evaporated film even on various steps on the surface without causing extreme thinning of the evaporation source or film breakage. Wiring breakage at
Alternatively, defects such as high resistance due to insufficient film thickness can be prevented.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明の一実施例を示す蒸着装置の概ＴＩ８構
成図、第２図は従来のＨ着装置を示す概略構成図、第３
図は従来装置による被蒸着基板と蒸着物質の飛来方向の
関係を説明する図である。 １１・・・基板設置台、１２・・・ユニバーサルジヨイ
ント、１３・・・基板回転軸、１４・・・才差運動用回
転筒軸、１５゜１６・・・回転伝達用歯車、１７・・・
モータ、１８・・・傾斜用腕木、２１・・・環状溝 代理人　　　森　　本　　義　　弘 第１図FIG. 1 is a schematic TI8 configuration diagram of a vapor deposition apparatus showing an embodiment of the present invention, FIG. 2 is a schematic configuration diagram showing a conventional H deposition apparatus, and FIG.
The figure is a diagram illustrating the relationship between the deposition target substrate and the flying direction of the deposition material using a conventional apparatus. DESCRIPTION OF SYMBOLS 11... Board installation stand, 12... Universal joint, 13... Board rotating shaft, 14... Rotating tube shaft for precession, 15° 16... Gear for rotation transmission, 17...・
Motor, 18... Tilt arm, 21... Annular groove agent Yoshihiro Morimoto Figure 1

Claims (1)

【特許請求の範囲】[Claims] １、ユニバーサルジョイントを介して被蒸着基板設置用
の基板設置台を回転させる回転装置と、前記回転装置に
連動して前記基板設置台に才差運動を与える装置とを有
する蒸着装置。1. A vapor deposition apparatus having a rotation device that rotates a substrate installation table for installing a substrate to be deposited via a universal joint, and a device that provides precession to the substrate installation table in conjunction with the rotation device.