JPS6214719U - - Google Patents
Info
- Publication number
- JPS6214719U JPS6214719U JP10412385U JP10412385U JPS6214719U JP S6214719 U JPS6214719 U JP S6214719U JP 10412385 U JP10412385 U JP 10412385U JP 10412385 U JP10412385 U JP 10412385U JP S6214719 U JPS6214719 U JP S6214719U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- transfer device
- reaction gas
- wafer transfer
- utility
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000012808 vapor phase Substances 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims 6
- 239000012495 reaction gas Substances 0.000 claims 5
Description
第１図は本考案の装置の一実施例を備えた気相
エピキタシヤル装置の縦断面図、第２図は第１図
の−矢視図、第３図は本考案の装置の他の実
施例を備えた気相エピキタシヤル装置の縦断面図
、第４図は第３図の−矢視図、第５図は第４
図の−矢視図である。
Ａ……反応ガス噴出部、１……板、２……噴出
口、３……半導体ウエハ、４……ガス容器、１５
Ａ，１５Ｂ……流量制御弁、１９Ａ，１９Ｂ……
シリンダ。
FIG. 1 is a longitudinal sectional view of a vapor phase epitaxial device equipped with an embodiment of the device of the present invention, FIG. 2 is a view taken along the - arrow in FIG. 1, and FIG. 3 is another embodiment of the device of the present invention. 4 is a longitudinal sectional view of a vapor phase epitaxial device equipped with
It is a - arrow direction view of a figure. A... Reactive gas ejection part, 1... Plate, 2... Ejection port, 3... Semiconductor wafer, 4... Gas container, 15
A, 15B...Flow rate control valve, 19A, 19B...
Cylinder.
Claims (1)
タシヤル層を成長形成するための反応ガス噴出部
を備える気相エピキタシヤル装置において、前記
反応ガス噴出部に、半導体ウエハをこの部分より
移送させる移送手段を設けたことを特徴とする半
導体ウエハの移送装置。 ２ 実用新案登録請求の範囲第１項記載の半導体
ウエハの移送装置において、前記移送手段は、反
応ガス噴出部を複数のガス室に区画し、このガス
室と反応ガス予混合装置との間に、反応ガス流入
量可変機構を設けて構成したことを特徴とする半
導体ウエハの移送装置。 ３ 実用新案登録請求の範囲第１項記載の半導体
ウエハの移送装置において、前記移送手段は、反
応ガス噴出部を傾動可能に支持し、この反応ガス
噴出部にこれを傾動可能に支持し、この反応ガス
噴出部にこれを傾動させる駆動機構を連結して構
成したことを特徴とする半導体ウエハの移送装置
。[Claims for Utility Model Registration] 1. In a vapor phase epitaxial apparatus equipped with a reactive gas jetting part for floating a semiconductor wafer and growing an epitaxial layer on the lower surface thereof, the semiconductor wafer is placed in this part by the reactive gas jetting part. 1. A semiconductor wafer transfer device, comprising a transfer means for transferring a semiconductor wafer. 2 Utility Model Registration Scope of Claim 1 In the semiconductor wafer transfer device as set forth in claim 1, the transfer means divides the reaction gas jetting section into a plurality of gas chambers, and there is a space between the gas chamber and the reaction gas premixing device. A semiconductor wafer transfer device, characterized in that it is configured with a variable reaction gas inflow rate mechanism. 3 Utility Model Registration Scope of Claim 1 In the semiconductor wafer transfer device as set forth in claim 1, the transfer means tiltably supports a reactive gas jetting section, supports the reactive gas jetting section in a tiltable manner, and 1. A semiconductor wafer transfer device comprising a reaction gas ejection section connected to a drive mechanism for tilting the reaction gas ejection section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10412385U JPS6214719U (en) | 1985-07-10 | 1985-07-10 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10412385U JPS6214719U (en) | 1985-07-10 | 1985-07-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6214719U true JPS6214719U (en) | 1987-01-29 |
Family
ID=30977324
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10412385U Pending JPS6214719U (en) | 1985-07-10 | 1985-07-10 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6214719U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20070090752A (en) * | 2006-03-02 | 2007-09-06 | 신꼬오덴끼가부시끼가이샤 | Air cushion unit and production method of the same |
-
1985
- 1985-07-10 JP JP10412385U patent/JPS6214719U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20070090752A (en) * | 2006-03-02 | 2007-09-06 | 신꼬오덴끼가부시끼가이샤 | Air cushion unit and production method of the same |
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