JPS62145726A - Susceptor for epitaxial growth - Google Patents
Susceptor for epitaxial growthInfo
- Publication number
- JPS62145726A JPS62145726A JP28707485A JP28707485A JPS62145726A JP S62145726 A JPS62145726 A JP S62145726A JP 28707485 A JP28707485 A JP 28707485A JP 28707485 A JP28707485 A JP 28707485A JP S62145726 A JPS62145726 A JP S62145726A
- Authority
- JP
- Japan
- Prior art keywords
- susceptor
- radio frequency
- epitaxial growth
- specific resistivity
- frequency induction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、半導体製造においてエピタキシャル成長を行
なう際に使用されるサセプターに関するものである。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a susceptor used in epitaxial growth in semiconductor manufacturing.
（従来の技術）
サセプターは室温から１２００℃までの急熱・急冷、高
温のＨＣＪガスエツチングなどの条件に充分耐えうろこ
とが要求されるが、さらに重要な特性としてサセプター
は、高純度のシリコンウエノ・−等の製品に接触するた
め製品を汚染しないことが要求される。以上の特性を満
足させるものとして従来から黒鉛基材表面に高純度のＳ
ｉＣをコーティングした８１Ｃ被覆黒鉛材が使用されて
いる。(Prior art) The susceptor is required to be able to withstand conditions such as rapid heating and cooling from room temperature to 1200°C and high-temperature HCJ gas etching. It is required not to contaminate the product because it comes into contact with products such as ・-. In order to satisfy the above characteristics, high-purity S has been applied to the surface of graphite base material.
81C coated graphite material coated with iC is used.
（発明が解決しようとする問題点）
従来のサセプターを用いて実際のエピタキシャル成長を
行なうと、高周波誘導によってサセプターに電磁力によ
る浮力が作用して揺れが起こシそれが徐々に増幅され、
更にはサセプターが高周波誘導のワークコイルカバーに
接触するという不具合がしばしば発生した。サセプター
に浮力が作用するメカニズムは、ワークコイルからの高
周波の磁界によってサセプターにうず電流が発生し、そ
のジュール熱で加熱されるが、それと同時にうず電流に
よる磁界が発生し、それが反発力となって浮力が作用す
るのである。(Problems to be Solved by the Invention) When actual epitaxial growth is performed using a conventional susceptor, buoyancy due to electromagnetic force acts on the susceptor due to high frequency induction, causing shaking, which is gradually amplified.
Furthermore, problems often occurred in which the susceptor came into contact with the high-frequency induction work coil cover. The mechanism by which buoyancy acts on the susceptor is that eddy currents are generated in the susceptor by the high-frequency magnetic field from the work coil, and the susceptor is heated by the Joule heat, but at the same time, a magnetic field is generated by the eddy currents, which becomes a repulsive force. The buoyant force acts.
この対策としてサセプターの厚さを大きくして重量増加
を図り、高周波誘導による浮力に対して安定性を保つよ
うにしている。ところが最近のサセプター径の大型化に
よって単にサセプターを厚くして重量増加を図るのは取
扱いの困難性から限界があり、また加熱効率の低下を招
くという問題がある。As a countermeasure to this problem, the susceptor is made thicker and heavier to maintain stability against buoyancy induced by high-frequency waves. However, due to the recent increase in the diameter of susceptors, there is a limit to increasing the weight by simply increasing the thickness of the susceptor due to the difficulty of handling, and there is also the problem of lowering heating efficiency.
本発明は上記した問題点を解消するエピタキシャル成長
用サセプターを提供することを目的とする。An object of the present invention is to provide a susceptor for epitaxial growth that solves the above-mentioned problems.
（問題点を解決するための手段）
本発明者らは、従来のサセプターが持つ欠点を改良する
ため鋭意研究した結果、サセプターに生じる浮力が黒鉛
基材の電気比抵抗の大きさと相関があること、および加
熱に必要な容量の高周波誘導を受けても浮力の影響が出
ない電気比抵抗の範囲を見い出した。(Means for Solving the Problems) As a result of intensive research to improve the drawbacks of conventional susceptors, the present inventors found that the buoyancy generated in the susceptor is correlated with the electrical resistivity of the graphite base material. , and found a range of electrical resistivity that is not affected by buoyancy even when subjected to high-frequency induction with the capacity required for heating.
本発明は、黒鉛基材とその表面がＳｉＣで被覆されたコ
ーティング層からなり、かつ高周波誘導によって加熱さ
れるエピタキシャル成長用サセプターにおいて、黒鉛基
材の電気比抵抗が１３００〜２０００μΩ−ｃｍである
エピタキシャル成長用サセプターに関するものである。The present invention relates to a susceptor for epitaxial growth which is made of a graphite base material and a coating layer whose surface is coated with SiC, and which is heated by high frequency induction. It concerns the susceptor.
本発明において、黒鉛基材の電気比抵抗が１３００μΩ
−１未満では高周波誘導による浮力の影響が大きくサセ
プターの姿勢が不安定になり。In the present invention, the electric specific resistance of the graphite base material is 1300 μΩ
If it is less than -1, the influence of buoyancy due to high frequency induction is large and the attitude of the susceptor becomes unstable.
また２０００μΩ−Ｃｍを越えると加熱効率が著しく落
ちるため、高周波電力を増加せざるをえ々くなり、浮力
もそれに伴って大きくなり、更にはサセプターの不安定
を生じ杏≠ることになる。Moreover, if it exceeds 2000 .mu..OMEGA.-Cm, the heating efficiency will drop significantly, making it necessary to increase the high frequency power, and the buoyancy will increase accordingly, furthermore, the susceptor will become unstable.
本発明に用いられる黒鉛基材は１例えば骨材にピッチコ
ークス粉と油煙とを適量配合することによって電気比抵
抗が１３００〜２０００μΩ−ｃｍのものが得られるが
、特にこの骨材の種類、配合割合等に制限はない。黒鉛
基材の製造法及びＳｉＣの被覆法は公知の方法による。The graphite base material used in the present invention can have an electrical resistivity of 1,300 to 2,000 μΩ-cm by, for example, blending appropriate amounts of pitch coke powder and oil smoke with the aggregate, but in particular, the type and composition of this aggregate. There are no restrictions on the ratio, etc. The graphite base material manufacturing method and the SiC coating method are based on known methods.
（実施例） 以下に実施例及び比較例について述べる。(Example) Examples and comparative examples will be described below.
ピッチコークス粉（平均粒径５０μｍ）と油煙（平均粒
径５０μｍ）とを第１表に示す割合で配合した骨材に結
合材としてタールピッチ（軟化点８５℃）を加え、捏和
機で２００℃に加熱混線後。Tar pitch (softening point: 85°C) was added as a binder to aggregate made by blending pitch coke powder (average particle size 50 μm) and soot (average particle size 50 μm) in the proportions shown in Table 1, and the mixture was mixed with a kneading machine for 200 μm. After heating to ℃.
１５０μｍｎ以下に粉砕し、ラバープレスで成形し。It is crushed to 150 μm or less and molded using a rubber press.
１０００℃で焼成し、２８００℃で黒鉛化したブロック
を外径６００閣、内径１００ｍ及び厚さ１０■に加工し
、更に電気炉中でＣＣ１ｚＦｚガスで精製して黒鉛基材
を得た。この黒鉛基材をＣＶＤ炉に入れＣＨＩＩ Ｓ
ｉ Ｃ１ｓガスをキャリヤの窒素ガスにより導入し、基
材表面に１００μｍの厚さでＳｉＣ被膜をコーティング
した。A block fired at 1000°C and graphitized at 2800°C was processed to have an outer diameter of 600 mm, an inner diameter of 100 m, and a thickness of 10 cm, and was further purified with CC1zFz gas in an electric furnace to obtain a graphite base material. This graphite base material is placed in a CVD furnace and CHII S
i C1s gas was introduced using nitrogen gas as a carrier, and a SiC film was coated on the surface of the substrate to a thickness of 100 μm.
第１表
実施例および比較例より得られたサセプターを用い、エ
ピタキシャル成長炉において加熱試験を行なった。試験
条件は昇温速度５７．５℃／分、最高温度１２００℃、
最大高周波電力２３０藺である。A heating test was conducted in an epitaxial growth furnace using the susceptors obtained from the Examples and Comparative Examples in Table 1. The test conditions were a heating rate of 57.5°C/min, a maximum temperature of 1200°C,
The maximum high frequency power is 230 yen.
その結果を第１表に示す。The results are shown in Table 1.
第１表より明らかなように本発明の範囲の黒鉛基材を用
いたサセプターは高周波加熱による浮力に対して不安定
になることはなかった。それに対し本発明の範囲外の黒
鉛基材を用いたサセプターは浮力による揺れが生じ不安
定となった。As is clear from Table 1, the susceptor using the graphite base material according to the present invention did not become unstable due to the buoyancy caused by high frequency heating. On the other hand, a susceptor using a graphite base material outside the scope of the present invention was unstable due to shaking due to buoyancy.
（発明の効果）
本発明になるエピタキシャル成長用サセプターは、その
厚さを大きくしなくても高周波加熱における浮力による
揺れなどの不安定Ｉを生じ井ない。(Effects of the Invention) The susceptor for epitaxial growth according to the present invention does not cause instability I such as shaking due to buoyancy during high-frequency heating without increasing its thickness.
６一61
Claims (1)
ング層からなり、かつ高周波誘導によつて加熱されるエ
ピタキシャル成長用サセプターにおいて、黒鉛基材の電
気比抵抗が１３００〜２０００μΩ−ｃｍであるエピタ
キシャル成長用サセプター。1. A susceptor for epitaxial growth consisting of a graphite base material and a coating layer whose surface is coated with SiC and heated by high-frequency induction, in which the electrical resistivity of the graphite base material is 1300 to 2000 μΩ-cm. Susceptor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60287074A JPH0650731B2 (en) | 1985-12-20 | 1985-12-20 | Susceptor for epitaxial growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60287074A JPH0650731B2 (en) | 1985-12-20 | 1985-12-20 | Susceptor for epitaxial growth |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62145726A true JPS62145726A (en) | 1987-06-29 |
| JPH0650731B2 JPH0650731B2 (en) | 1994-06-29 |
Family
ID=17712716
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60287074A Expired - Lifetime JPH0650731B2 (en) | 1985-12-20 | 1985-12-20 | Susceptor for epitaxial growth |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0650731B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62177914A (en) * | 1986-01-30 | 1987-08-04 | Toshiba Ceramics Co Ltd | Susceptor |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4983706A (en) * | 1972-11-24 | 1974-08-12 | ||
| JPS58182818A (en) * | 1982-04-21 | 1983-10-25 | Kokusai Electric Co Ltd | Vapor growth device |
| JPS59182213A (en) * | 1983-03-31 | 1984-10-17 | Toyo Tanso Kk | Isotropic carbon material |
| JPS6058613A (en) * | 1983-09-12 | 1985-04-04 | Hitachi Ltd | Epitaxial apparatus |
| JPS60163428A (en) * | 1984-02-03 | 1985-08-26 | Agency Of Ind Science & Technol | Substrate susceptor for vapor growth |
-
1985
- 1985-12-20 JP JP60287074A patent/JPH0650731B2/en not_active Expired - Lifetime
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4983706A (en) * | 1972-11-24 | 1974-08-12 | ||
| JPS58182818A (en) * | 1982-04-21 | 1983-10-25 | Kokusai Electric Co Ltd | Vapor growth device |
| JPS59182213A (en) * | 1983-03-31 | 1984-10-17 | Toyo Tanso Kk | Isotropic carbon material |
| JPS6058613A (en) * | 1983-09-12 | 1985-04-04 | Hitachi Ltd | Epitaxial apparatus |
| JPS60163428A (en) * | 1984-02-03 | 1985-08-26 | Agency Of Ind Science & Technol | Substrate susceptor for vapor growth |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62177914A (en) * | 1986-01-30 | 1987-08-04 | Toshiba Ceramics Co Ltd | Susceptor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0650731B2 (en) | 1994-06-29 |
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