JPS62128576A - Light emitting diode - Google Patents

Light emitting diode

Info

Publication number
JPS62128576A
JPS62128576A JP60268692A JP26869285A JPS62128576A JP S62128576 A JPS62128576 A JP S62128576A JP 60268692 A JP60268692 A JP 60268692A JP 26869285 A JP26869285 A JP 26869285A JP S62128576 A JPS62128576 A JP S62128576A
Authority
JP
Japan
Prior art keywords
emitting diode
light emitting
hole
chip
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60268692A
Other languages
Japanese (ja)
Inventor
Hiroto Furuhashi
古橋　浩人
Fumio Yamazaki
文雄 山崎
Toshiyuki Miwa
登志幸 美和
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Priority to JP60268692A priority Critical patent/JPS62128576A/en
Publication of JPS62128576A publication Critical patent/JPS62128576A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To suppress the temperature rise inside a diode and facilitate higher intensity emission by a method wherein specific shapes and dimensions are given to a base and a chip and the light emitted from the sides of the chip is guided upward. CONSTITUTION:A mortar-shape hole is provided at the center of a top surface. The diameter of the bottom of the hole is 410mum, the depth of the hole is 250mum and the diameter of the opening of the hole is 710mum. Gold plating is applied to the slope of the hole to form a reflective surface 4a. A light emitting diode chip 1 is worked into an octagon whose sides are slightly inclined to make the area of the top surface a little smaller than the area of the bottom. The distance between the parallel sides of the bottom is 375mum, the distance between the parallel sides of the top is 360mum and the thickness is 150mum. The reason why the shape of the light emitting diode chip is made to be polygonal is to make the area of a P-N junction larger and to make the light reflected by the slope of the mortar-shape hole uniform.

Description

【発明の詳細な説明】 （産業上の利用分野） 本発明は、ＰＮ接合に電界を印加することにより注入さ
れた小数キャリヤの放射再結合による発光を利用する発
光ダイオードに関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a light emitting diode that utilizes light emission due to radiative recombination of minority carriers injected by applying an electric field to a PN junction.

（発明の背景） 発光ダイオードチップの発光を９）ｓ果的に取り出すた
めに、発光ダイオードチップを支持するペースに穴を設
は穴の斜面を利用してチップの側面から発光する光を前
面に導く構成の発光ダイオードが提案されている。(Background of the invention) In order to effectively extract the light emitted from the light emitting diode chip, a hole is provided in the space that supports the light emitting diode chip.The slope of the hole is used to direct the light emitted from the side of the chip to the front. A light-emitting diode with a light-emitting configuration has been proposed.

第５図はチップの断面形状が正方形である比較の対象の
発光ダイオード（従来形の発光ダイオード）の断面図、
第６図は前記比較の対象のグイオートのレンズ部分を除
去して示した発光ダイオードチップの関係を示した拡大
平面図、第７図は従来の発光ダイオードの拡大断面図で
ある。Figure 5 is a cross-sectional view of a comparative light-emitting diode (conventional light-emitting diode) whose chip has a square cross-sectional shape.
FIG. 6 is an enlarged plan view showing the relationship between the light emitting diode chips of the comparative Goioto with the lens portion removed, and FIG. 7 is an enlarged sectional view of the conventional light emitting diode.

断面形状が正方形である発光ダイオードチップ１は、す
りばち状の穴をもつベースの底面に接合されている。A light emitting diode chip 1 having a square cross section is bonded to the bottom surface of a base having a dovetail hole.

すりばち状の空間を有効に利用するために底面の円に略
内接する形状とする。In order to effectively utilize the cone-shaped space, the shape is approximately inscribed in the circle on the bottom surface.

発光ダイオードチップｌの表面中央には配線用のリード
２が接続されており、端子７を介して外部から動作電流
が供給される。A wiring lead 2 is connected to the center of the surface of the light emitting diode chip l, and an operating current is supplied from the outside via a terminal 7.

（発明が解決しようとする問題点） 前記形式の発光グイオートにおいて供給電力を大きくす
ると、ある程度発光量を増加させることができる。(Problems to be Solved by the Invention) In the above-mentioned type of light emitting device, if the supplied power is increased, the amount of light emitted can be increased to a certain extent.

しかし、それ以上の電流では主にジエール熱あるいは光
の内部吸収による発熱により、光出力の低下が見られ限
界がある。However, if the current is higher than that, there is a limit as the optical output decreases mainly due to Gierre heat or heat generation due to internal absorption of light.

電流密度を小さくして発熱を小さくする構造にするため
にデツプの断面積を大きくする方法が考えられる。In order to create a structure that reduces current density and heat generation, a method of increasing the cross-sectional area of the depth may be considered.

本発明の目的は前記ベースのすりばち状の穴を有効に利
用することにより、前述した発光ダイオードよりもより
大きい発光を得ることができる発光ダイオードを提供す
ることにある。An object of the present invention is to provide a light emitting diode that can emit more light than the above-mentioned light emitting diode by effectively utilizing the dovetail hole in the base.

（問題を解決するための手段） 前記目的を達成するために、本発明による発光ダイオー
ドは、底面が円であるすりばち状の穴が設けられている
ベースと、５角以上の多角柱形状であって底面の角が前
記穴の底面に内接または近接して配置される発光ダイオ
ードチップからなり、前記チップの側面から放射された
光を前記すりばち状の穴の斜面で反射させ表面から放射
された光とともに上方に導かれるように構成されている
。(Means for Solving the Problem) In order to achieve the above object, a light emitting diode according to the present invention includes a base provided with a dome-shaped hole whose bottom surface is circular, and a polygonal prism shape with five or more sides. The light emitting diode chip has a corner of the bottom surface inscribed in or close to the bottom surface of the hole, and the light emitted from the side surface of the chip is reflected by the slope of the hole and emitted from the surface. It is constructed so that it is guided upward along with the light.

（実施例） 以下図面等を参照して本発明をさらに詳しく説明する。(Example) The present invention will be described in more detail below with reference to the drawings and the like.

第１図は本発明による発光ダイオードの実施例を示す断
面図である。FIG. 1 is a sectional view showing an embodiment of a light emitting diode according to the present invention.

ベース４はコバール金泥を基礎材料として金メッキを施
したものであり、ベースの厚さ１．１ｍｍである。The base 4 is made of Kovar gold mud as a basic material and is plated with gold, and has a thickness of 1.1 mm.

上面中心にすりばち状の穴が設けられている。A mortar-shaped hole is provided in the center of the top surface.

この穴の底面の直径は４１０μｍ、穴の深さは２５０μ
ｍ、穴の開口の直径は７１０１１ｍである。The diameter of the bottom of this hole is 410μm, and the depth of the hole is 250μm.
m, the diameter of the hole opening is 71011 m.

反射面を形成する穴の斜面も金メッキが施され反射面４
ａを形成している。The slope of the hole that forms the reflective surface is also plated with gold, and the reflective surface 4
It forms a.

第２図はレンズ部分３を除去して示したベースの穴とチ
ップの関係を示した拡大平面図、第３図は同じく拡大断
面図である。FIG. 2 is an enlarged plan view showing the relationship between the hole in the base and the chip with the lens portion 3 removed, and FIG. 3 is an enlarged cross-sectional view.

発光ダイオードチップ１は、ＧａＡ／ＡｓのＰ形基板の
上面にＮ層を形成したものであり、表面中心に電極１ａ
が設けられている。The light emitting diode chip 1 has an N layer formed on the top surface of a P-type substrate made of GaA/As, and an electrode 1a at the center of the surface.
is provided.

発光ダイオードチップ１は正８角形に加工されるが、側
面はわずかに傾斜し、底面よりも上面の面積がわずかに
小さくなっている。Although the light emitting diode chip 1 is processed into a regular octagon, the side surfaces are slightly inclined, and the area of the top surface is slightly smaller than that of the bottom surface.

底面の平行な辺間の距離は３７５μｍ、上面の平行な辺
間の距離は３６０μｍで、厚さは１５０μｍである。The distance between parallel sides on the bottom surface is 375 μm, the distance between parallel sides on the top surface is 360 μm, and the thickness is 150 μm.

本発明において発光ダイオードチップの形状を多角形と
するのは、ＰＮ接合の面積を大きくして、かつすりばち
状の穴の斜面での反射光を均一にするためである。In the present invention, the shape of the light emitting diode chip is made polygonal in order to increase the area of the PN junction and to make the reflected light on the slope of the conical hole uniform.

第４図は円に内接する多角形の面積比を示すグラフであ
る。FIG. 4 is a graph showing the area ratio of polygons inscribed in a circle.

円に内接する正方形の面積を１とすると正５角形は１．
２倍・・・正８角形は１．４４倍となる。If the area of a square inscribed in a circle is 1, then a regular pentagon is 1.
2x...A regular octagon is 1.44x.

この発光ダイオードチップ１は前記ベースの底面に電気
的かつ機械的に接続されている。This light emitting diode chip 1 is electrically and mechanically connected to the bottom surface of the base.

表面の電極１ａには金線のり一ド２がボンディングによ
り接続されており、リード２の他端は前記ベース４に絶
縁層９を介して支持されている端子７に接続されている
。他の端子６はベース４に直接接続されている。A gold wire glue 2 is connected to the electrode 1a on the surface by bonding, and the other end of the lead 2 is connected to a terminal 7 supported on the base 4 via an insulating layer 9. The other terminal 6 is directly connected to the base 4.

ベース４の表面には透明エポキシ樹脂のレンズ部３が設
けられている。A lens portion 3 made of transparent epoxy resin is provided on the surface of the base 4.

前記実施例発光ダイオードと先に説明した従来形式の発
光ダイオードの特性を比較する。The characteristics of the light emitting diode of the above embodiment and the conventional type light emitting diode described above will be compared.

比較の対象とする従来形式の発光ダイオードは、発光ダ
イオ−トチ・ノブの形状の他は全て前記実施例と同一に
しである。The conventional light emitting diode to be compared is identical to the embodiment described above except for the shape of the light emitting diode switch and knob.

発光ダイオードチップの形状は、正４角形で底面の平行
な辺間の距離は２７５μｍ、上面の平行な辺間の距離は
２６５μｍである。The shape of the light emitting diode chip is a regular rectangle, and the distance between the parallel sides on the bottom surface is 275 μm, and the distance between the parallel sides on the top surface is 265 μm.

第８図は本発明による前記実施例発光ダイオードと前記
比較の対象の発光ダイオードの入力電流に対する発光特
性を比較して示したグラフである。FIG. 8 is a graph showing a comparison of the light emission characteristics with respect to the input current of the light emitting diode of the embodiment according to the present invention and the light emitting diode for comparison.

このグラフは、発光ダイオードに７５０μｓのパルス幅
でＩＨｚのパルス電流（ＩＦ）を印加し、その発光を、
発光ダイオードから２０ｍｍ離れた位置で受光素子で受
光したときの出力電流をサンプルホールドして、出力（
Ｉｏ）をプロットしたものである。This graph shows that when an IHz pulse current (IF) is applied to a light emitting diode with a pulse width of 750 μs, the light emission is
Sample and hold the output current when light is received by the light receiving element at a position 20 mm away from the light emitting diode, and calculate the output (
Io) is plotted.

出力（Ｉｏ）は各ダイオードから得られる光量に対応す
るものである。The output (Io) corresponds to the amount of light obtained from each diode.

従来例ではＩＰがＩ八を越えると電流を増加しても光量
の増加は無くなり、１．５Ａでは光量が激減する。In the conventional example, when IP exceeds I8, the amount of light does not increase even if the current is increased, and at 1.5 A, the amount of light decreases drastically.

これに対して、実施例発光ダイオードはＩＰが１゜５Ａ
まで供給電流に対応して発光量が増加している。つまり
ＩＰ−ｒｏ特性が従来のものよりも直線領域が延びてい
る。On the other hand, the example light emitting diode has an IP of 1°5A.
The amount of light emitted increases in response to the supplied current. In other words, the linear region of the IP-ro characteristic is longer than that of the conventional one.

また、光出力［ｏのピークは従来形式の発光ダイオード
に比べて１．４〜１．５倍に延びている。Furthermore, the peak of the optical output [o] is 1.4 to 1.5 times longer than that of conventional light emitting diodes.

第９図は前記比較の対象の発光ダイオード（従来形式）
と本発明による前記実施例発光ダイオードの発光パター
ンを比較して示した図である。Figure 9 shows the light emitting diode for comparison (conventional type).
FIG. 3 is a diagram illustrating a comparison of the light emitting patterns of the light emitting diode according to the embodiment of the present invention.

第９図（Ａ）および（Ｂ）はそれぞれの発光ダイオード
の穴の部分を撮影したものである。FIGS. 9(A) and 9(B) are photographs of the hole portions of the respective light emitting diodes.

第９図（Ａ）に示す従来形式の発光ダイオードの穴４の
反射面の輝度は実施例に比較して小さくその面積も小さ
い。The brightness of the reflective surface of the hole 4 of the conventional type light emitting diode shown in FIG. 9(A) is smaller than that of the embodiment, and its area is also small.

これは従来形式に比較して実施例の方がチップの側面か
ら放出される光をよりりＪ果的に前方に導いていること
を示している。This shows that the example guides the light emitted from the side surface of the chip forward more effectively than the conventional type.

本件発明者等の推定によれば全発光の略半分はチップの
内部で複雑な反射をして側面から放射される。According to estimates by the inventors of the present invention, approximately half of the total emitted light undergoes complex reflections inside the chip and is emitted from the sides.

この光を前方に効果的に反射することは、発光の利用効
率を高めるために重要である。It is important to effectively reflect this light forward in order to increase the utilization efficiency of the light emission.

実施例発光ダイオードでは、チップの断面積が大きいの
で、電流密度が小さくなり、発熱が減り、印加できる電
流を増加することができ、同時に光出力を増加できる。In the example light emitting diode, since the cross-sectional area of the chip is large, the current density is reduced, heat generation is reduced, and the current that can be applied can be increased, and at the same time, the light output can be increased.

（発明の効果） 以上詳しく説明したように、本発明による発光ダイオー
ドは、底面が円であるすりばち状の穴が設けられている
ベースと、５角以上の多角柱形状であって底面の角が前
記穴の底面に内接または近接して配置される発光ダイオ
ードチップからなり、前記チップの側面から放射された
光を前記すりばち状の穴の斜面で反射させ表面から放射
された光とともに上方に導かれるように構成されている
。(Effects of the Invention) As explained in detail above, the light emitting diode according to the present invention has a base provided with a dovetail-shaped hole with a circular bottom surface, and a polygonal prism shape with five or more sides with corners on the bottom surface. It consists of a light emitting diode chip disposed inscribed in or close to the bottom of the hole, and the light emitted from the side surface of the chip is reflected on the slope of the hole and guided upward together with the light emitted from the surface. It is configured so that it can be

チップを５角以上の多角柱形状にすると、従来例に比較
して限られた大きさの丸い穴の斜面に側面をより近接さ
せることができる。その結果側面からの光も有効に上方
に導かれる。When the chip is formed into a polygonal prism shape with five or more sides, the side surface can be brought closer to the slope of a round hole with a limited size compared to the conventional example. As a result, light from the sides is also effectively guided upward.

同一の穴に対しては正方形のチップよりも接合の面積の
大きなものを収容することができるので、電流密度を低
くすることができる。また、すりばち状の穴の斜面での
反射光をより均一化することができる。Since a chip with a larger junction area than a square chip can be accommodated in the same hole, the current density can be lowered. Further, the reflected light on the slopes of the dovetail holes can be made more uniform.

その結果、従来の形式のものに比較して内部での温度上
昇を低く押さえることができ、より大きな発光をさせる
ことができる。As a result, the internal temperature rise can be suppressed to a lower level than in conventional types, and greater light can be emitted.

すなわち、本発明は従来例に見られた、主にジュール熱
あるいは光の内部吸収による発熱により、光出力ｒｏの
限界を越える有効な発光を得ることができる。That is, the present invention can obtain effective light emission that exceeds the limit of optical output ro, mainly due to heat generation due to Joule heat or internal absorption of light, which was seen in the conventional example.

その結果、小形で比較的出力の大きい発光ダイオードを
得ることができる。この発光ダイオードはアクチブ距離
センサの投光素子等に利用できる。As a result, a small light emitting diode with relatively high output can be obtained. This light emitting diode can be used as a light projecting element of an active distance sensor.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明による発光ダイオードの実施例を示す断
面図である。 第２図はレンズ部分を除去して示したベースの穴とチッ
プの関係を示した拡大平面図である。 第３図は同じく拡大断面図である。 第４図は円に内接する多角形の面積比を示すグラフであ
る。 第５図はチップの平面形状が正方形である比較の対象の
発光ダイオードの断面図である。 第６図は比較の対象のダイオードのレンズ部分を除去し
て示したベースの穴とチップの関係を示した拡大平面図
である。 第７図は従来の発光ダイオードの拡大断面図である。 第８図は本発明による前記実施例発光ダイオードと前記
比較の対象の発光ダイオードの入力電流に対する発光特
性を比較して示したグラフである。 第９図は前記比較の対象の発光グイオートと本発明によ
る前記実施例発光ダイオードの発光パターンを比較して
示した図である。 ■・・・発光ダイオードチップ １ａ・・・チップの電極 ２・・・配線用のリード ３・・・レンズ部 ４・・・ベース　　　　　　４ａ・・・反射面６．７・
・・リード端子 ９　・・・を色線層 特許出願人　浜松ホトニクス株式会社 代理人　弁理士　　井　ノ　ロ　　壽 λ１囚　　　　　　　　　第２１ 卵°　■″ 第３ｒＸＪ １　　　　才４図 Ａ′６２ 才９図FIG. 1 is a sectional view showing an embodiment of a light emitting diode according to the present invention. FIG. 2 is an enlarged plan view showing the relationship between the hole in the base and the chip with the lens portion removed. FIG. 3 is also an enlarged sectional view. FIG. 4 is a graph showing the area ratio of polygons inscribed in a circle. FIG. 5 is a cross-sectional view of a comparative light emitting diode whose chip has a square planar shape. FIG. 6 is an enlarged plan view showing the relationship between the hole in the base and the chip of a diode for comparison with the lens portion removed. FIG. 7 is an enlarged sectional view of a conventional light emitting diode. FIG. 8 is a graph showing a comparison of the light emission characteristics with respect to the input current of the light emitting diode of the embodiment according to the present invention and the light emitting diode for comparison. FIG. 9 is a diagram showing a comparison of the light emission patterns of the light emitting diode for comparison and the light emitting diode of the embodiment according to the present invention. ■... Light emitting diode chip 1a... Chip electrode 2... Wiring lead 3... Lens section 4... Base 4a... Reflective surface 6.7.
・・Lead terminal 9 ・・Colored line layer Patent applicant Hamamatsu Photonics Co., Ltd. Agent Patent attorney Inoro Hisashi λ1 prisoner 21st egg ° ■″ 3rXJ 1 year 4 figure A'62 year 9 figure

Claims (2)

【特許請求の範囲】[Claims] （１）底面が円であるすりばち状の穴が設けられている
ベースと、５角以上の多角柱形状であって底面の角が前
記穴の底面に内接または近接して配置される発光ダイオ
ードチップからなり、前記チップの側面から放射された
光を前記すりばち状の穴の斜面で反射させ表面から放射
された光とともに上方に導かれるように構成した発光ダ
イオード。(1) A base having a dome-like hole with a circular bottom, and a light-emitting diode having a polygonal prism shape with five or more sides, with the corners of the bottom inscribed in or close to the bottom of the hole. A light emitting diode comprising a chip, and configured such that light emitted from the side surface of the chip is reflected on the slope of the dome-shaped hole and guided upward together with the light emitted from the surface. （２）前記多角形状発光ダイオードチップは８角形であ
る特許請求の範囲第１項記載の発光ダイオード。(2) The light emitting diode according to claim 1, wherein the polygonal light emitting diode chip is octagonal.
JP60268692A 1985-11-29 1985-11-29 Light emitting diode Pending JPS62128576A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60268692A JPS62128576A (en) 1985-11-29 1985-11-29 Light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60268692A JPS62128576A (en) 1985-11-29 1985-11-29 Light emitting diode

Publications (1)

Publication Number Publication Date
JPS62128576A true JPS62128576A (en) 1987-06-10

Family

ID=17462054

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60268692A Pending JPS62128576A (en) 1985-11-29 1985-11-29 Light emitting diode

Country Status (1)

Country Link
JP (1) JPS62128576A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5087949A (en) * 1989-06-27 1992-02-11 Hewlett-Packard Company Light-emitting diode with diagonal faces
JP2007266647A (en) * 2003-09-30 2007-10-11 Toshiba Corp Light emitting device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5087949A (en) * 1989-06-27 1992-02-11 Hewlett-Packard Company Light-emitting diode with diagonal faces
JP2007266647A (en) * 2003-09-30 2007-10-11 Toshiba Corp Light emitting device
US8610145B2 (en) 2003-09-30 2013-12-17 Kabushiki Kaisha Toshiba Light emitting device

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