JPS6212136A - Manufacture of silicon nitride thin film - Google Patents
Manufacture of silicon nitride thin filmInfo
- Publication number
- JPS6212136A JPS6212136A JP15074885A JP15074885A JPS6212136A JP S6212136 A JPS6212136 A JP S6212136A JP 15074885 A JP15074885 A JP 15074885A JP 15074885 A JP15074885 A JP 15074885A JP S6212136 A JPS6212136 A JP S6212136A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- silicon nitride
- thin film
- film
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
、・′４″８″′１１０“（７）ｆｆｌｉＭＩＫＪＩＤ
“６６９・１ 化シリコン薄膜の製造方法
に関するものである。[Detailed description of the invention] Industrial application field, ・'4''8'''110'' (7) ffliMIKJID
“This article relates to a method for manufacturing a silicon 669.1 oxide thin film.
従来の技術
窒化シリコン薄膜の製造方法として、放電プラズマによ
る原料ガスの分解・反応を利用したプラズマ化学気相成
長法（以下、プラズマＣＶＤ法と呼ぶ）が従来からよく
用いられている。最近、このプラズマ０１ｉＤ法の一種
として、電子サイクロトロン共鳴（以下、ＫＣＲと呼ぶ
）を利用したものが考案され、窒化シリコン膜の製造方
法として注目されている。BACKGROUND OF THE INVENTION As a method for manufacturing silicon nitride thin films, plasma chemical vapor deposition (hereinafter referred to as plasma CVD), which utilizes decomposition and reaction of source gas by discharge plasma, has been commonly used. Recently, a method using electron cyclotron resonance (hereinafter referred to as KCR) has been devised as a type of plasma 01iD method, and is attracting attention as a method for manufacturing silicon nitride films.
図は本方法に用いられるＥＣＲプラズマＣＹＤ装置の概
略を示す断面図である。同図において、１はプラズマ発
生室であり、マイクロ波発振器３に接続されると共に、
ＥＣＲ条件を満たすような磁界を発生するソレノイドコ
イル４で囲まれており、ここで高密度のプラズマが発生
する。また２は薄膜形成室であり、プラズマ発生室から
流入したプラズマの作用によシ、基板７の表面に薄膜が
形成される。本装置を用いて窒化シリコン薄膜を形成す
る場合、従来はプラズマ発生室１にガス導入口６を通し
て窒素ガス（Ｎ２）を導入し、また薄膜形成室２にガス
導入口６を通してシランガス（ＳｉＨ４）を導入して膜
形成を行なっていた（例えば、「応用物理」 、第６２
巻、２月号（昭和５８年）。The figure is a cross-sectional view schematically showing an ECR plasma CYD apparatus used in this method. In the figure, 1 is a plasma generation chamber, which is connected to a microwave oscillator 3, and
It is surrounded by a solenoid coil 4 that generates a magnetic field that satisfies ECR conditions, and high-density plasma is generated here. Reference numeral 2 denotes a thin film forming chamber, in which a thin film is formed on the surface of the substrate 7 by the action of plasma flowing from the plasma generating chamber. When forming a silicon nitride thin film using this apparatus, conventionally, nitrogen gas (N2) was introduced into the plasma generation chamber 1 through the gas inlet 6, and silane gas (SiH4) was introduced into the thin film forming chamber 2 through the gas inlet 6. (For example, "Applied Physics", No. 62)
Volume, February issue (1981).
Ｐ、１１７）。P, 117).
発明が解決しようとする問題点
上述のような従来の方法では、プラズマ発生室１に生じ
た窒素プラズマ中のイオンが、プラズマ発生室の内壁（
通常ステンレス鋼製）を衝撃し、。Problems to be Solved by the Invention In the conventional method as described above, ions in the nitrogen plasma generated in the plasma generation chamber 1 penetrate the inner wall of the plasma generation chamber (
impact (usually made of stainless steel).
スパッタ蒸発せしめる現象が生じる。スパッタ蒸発した
内壁物質の一部は薄膜形成室２に流入し、形成される膜
中に不純物として混入することになる。その結果、得ら
れた窒化シリコン膜の特性が劣化する。すなわち、絶縁
性が低下したり、界面準位が増加する等の問題点が生じ
る場合があった。A phenomenon of sputter evaporation occurs. A part of the sputter-evaporated inner wall material flows into the thin film forming chamber 2 and becomes mixed into the formed film as an impurity. As a result, the properties of the obtained silicon nitride film deteriorate. That is, problems such as a decrease in insulation and an increase in interface states may occur.
本発明はかかる点に鑑みてなされたもので、簡易な手段
により、不純物の混入のない良質の窒化シリコン薄膜を
製造する方法を提供することを目的としている。The present invention has been made in view of the above, and an object of the present invention is to provide a method of manufacturing a high-quality silicon nitride thin film without contamination with impurities by a simple means.
問題点を解決するための手段
本発明は上記問題点を解決するため、上述のＥ（Ｒプラ
ズマＣＶＤ法において、本来の膜形成に先立って、プラ
ズマ発生室中にシランガスと窒素ガスの両者を導入して
プラズマを発生させる工程を付加するものである。Means for Solving the Problems The present invention solves the above problems by introducing both silane gas and nitrogen gas into the plasma generation chamber prior to the actual film formation in the above-mentioned E(R plasma CVD method). This method adds a step of generating plasma.
作用
本発明は上記の手段により、プラズマ発生室の内壁を窒
化シリコン膜で覆い、内壁物質のスパッタ蒸発を防止し
て、基板への膜形成時における不純物混入を防ぐという
作用にもとづくものである０実施例 ・
本発明の実施例で用いられるＥＣＲプラズマｃｖｎ装置
は、構造的には図に示したものと同様である。Operation The present invention is based on the operation of covering the inner wall of the plasma generation chamber with a silicon nitride film by the above-mentioned means to prevent sputter evaporation of the inner wall material and prevent contamination of impurities during film formation on the substrate. Embodiments - The ECR plasma CVN apparatus used in the embodiments of the present invention is structurally similar to that shown in the figures.
ただし本実施例においては、プラズマ発生室１へのガス
導入口６に、シランガス及び窒素ガスの両者を適宜供給
できるようにしておく必要がある。However, in this embodiment, it is necessary to be able to appropriately supply both silane gas and nitrogen gas to the gas inlet 6 to the plasma generation chamber 1.
本実施例の場合、本来の膜形成に先立って、プラズマ発
生室１にシランガスと窒素ガスの両者を導入しつつマイ
クロ波と磁界を印加して放電プラズマを発生させる。そ
の結果、プラズマ発生室内でシランと窒素が分解・反応
し、内壁に窒化シリコン膜が形成される。充分な厚さの
膜が形成された後、一旦放電を停止し、基板７を設置し
て本来の膜形成工程を実施する。この工程は従来例と同
様であシ、プラズマ発生室１には窒素ガス、薄膜形成室
２にはシランガスを導入しつつ膜形成を行 ・なう。こ
のとき、プラズマ発生室の内壁はやはり窒素プラズマ中
のイオンによシ衝撃されるが、スパッタ蒸発する物質は
シリコン及び窒素であるため何ら問題はなく、不純物混
入のない良質の窒化シリコン膜を得ることができる。In the case of this embodiment, prior to the actual film formation, both silane gas and nitrogen gas are introduced into the plasma generation chamber 1, and microwaves and a magnetic field are applied to generate discharge plasma. As a result, silane and nitrogen decompose and react within the plasma generation chamber, forming a silicon nitride film on the inner wall. After a film of sufficient thickness is formed, the discharge is temporarily stopped, the substrate 7 is placed, and the original film forming process is performed. This step is similar to the conventional example, and film formation is performed while introducing nitrogen gas into the plasma generation chamber 1 and silane gas into the thin film formation chamber 2. At this time, the inner wall of the plasma generation chamber is still bombarded by ions in the nitrogen plasma, but since the substances sputtered and evaporated are silicon and nitrogen, there is no problem, and a high-quality silicon nitride film without any impurities is obtained. be able to.
プラズマ発生室内壁を覆う窒化シリコン膜は、スパッタ
蒸発により次第に失なわれていくので、基板への膜形成
中に内壁が露出してしまうことがないよう留意する必要
がある。しかし通常１μｍ程度の厚さの膜を内壁に形成
しておけば、１００μｍ程度の膜を基板上に問題なく形
成できるので、半導体素子で一般に要求される数μｍ程
度の膜は数十回程度形成できることになり、プラズマ発
生室内壁への膜形成は毎回性なう必要はない。Since the silicon nitride film covering the inner wall of the plasma generation chamber is gradually lost due to sputter evaporation, care must be taken not to expose the inner wall during film formation on the substrate. However, if a film with a thickness of about 1 μm is normally formed on the inner wall, a film with a thickness of about 100 μm can be formed on the substrate without any problems, so a film of about several μm, which is generally required for semiconductor devices, can be formed several dozen times. Therefore, it is not necessary to form a film on the inner wall of the plasma generation chamber every time.
発明の効果
以上述べてきたように、本発明によれば、不純物混入の
ない良好な特性を有する窒化シリコン薄膜をＲＯＲプラ
ズマＣｖＤ法により製造することができ、実用的にきわ
めて有用である。Effects of the Invention As described above, according to the present invention, a silicon nitride thin film having good characteristics without contamination with impurities can be manufactured by the ROR plasma CvD method, and is extremely useful in practice.
図は本発明の一実施例及び従来例に共通して用いられる
ＩＣＯＲプラズマＣｖＤ装置の概略を示す断面図である
。
１・・・・・・プラズマ発生室、２・・・・・・薄膜形
成室、３・・・・・・マイクロ波発振器、４・・・・・
・ンレノイドコイル、６．６・・・・・・ガス導入口、
７・・・・・・基板、８・・・・・・真空ポンプ。The figure is a sectional view schematically showing an ICOR plasma CVD apparatus commonly used in an embodiment of the present invention and a conventional example. 1... Plasma generation chamber, 2... Thin film formation chamber, 3... Microwave oscillator, 4...
・Nlenoid coil, 6.6...Gas inlet,
7... Board, 8... Vacuum pump.
Claims (1)
ン共鳴型プラズマ化学気相成長装置を用い、シランガス
（ＳｉＨ＿４）及び窒素ガス（Ｎ＿２）を前記プラズマ
発生室に導入してプラズマを発生させることによりプラ
ズマ発生室の内壁に窒化シリコン薄膜を形成した後、シ
ランガスを前記薄膜形成室に導入し、かつ窒素ガスを前
記プラズマ発生室に導入してプラズマを発生させること
により前記薄膜形成室に置かれた基板上に窒化シリコン
薄膜を形成することを特徴とする窒化シリコン薄膜の製
造方法。Plasma is generated by introducing silane gas (SiH_4) and nitrogen gas (N_2) into the plasma generation chamber to generate plasma using an electron cyclotron resonance type plasma chemical vapor deposition apparatus equipped with a plasma generation chamber and a thin film formation chamber. After forming a silicon nitride thin film on the inner wall of the chamber, silane gas is introduced into the thin film forming chamber, and nitrogen gas is introduced into the plasma generating chamber to generate plasma, thereby forming a thin film on the substrate placed in the thin film forming chamber. 1. A method for producing a silicon nitride thin film, comprising forming a silicon nitride thin film on a silicon nitride thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15074885A JPH0640546B2 (en) | 1985-07-09 | 1985-07-09 | Method for manufacturing silicon nitride thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15074885A JPH0640546B2 (en) | 1985-07-09 | 1985-07-09 | Method for manufacturing silicon nitride thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6212136A true JPS6212136A (en) | 1987-01-21 |
| JPH0640546B2 JPH0640546B2 (en) | 1994-05-25 |
Family
ID=15503556
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15074885A Expired - Lifetime JPH0640546B2 (en) | 1985-07-09 | 1985-07-09 | Method for manufacturing silicon nitride thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0640546B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001004929A3 (en) * | 1999-07-09 | 2001-08-09 | Applied Materials Inc | A method of forming a film in a chamber |
| US7465966B2 (en) | 2003-03-19 | 2008-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Film formation method and manufacturing method of semiconductor device |
| JP2012531045A (en) * | 2009-06-22 | 2012-12-06 | アプライド マテリアルズ インコーポレイテッド | Boron film interface technology |
| CN102931072A (en) * | 2012-11-12 | 2013-02-13 | 上海华力微电子有限公司 | Method for manufacturing dual-stress thin film and semiconductor component |
-
1985
- 1985-07-09 JP JP15074885A patent/JPH0640546B2/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001004929A3 (en) * | 1999-07-09 | 2001-08-09 | Applied Materials Inc | A method of forming a film in a chamber |
| US6530992B1 (en) | 1999-07-09 | 2003-03-11 | Applied Materials, Inc. | Method of forming a film in a chamber and positioning a substitute in a chamber |
| US7465966B2 (en) | 2003-03-19 | 2008-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Film formation method and manufacturing method of semiconductor device |
| JP2012531045A (en) * | 2009-06-22 | 2012-12-06 | アプライド マテリアルズ インコーポレイテッド | Boron film interface technology |
| CN102931072A (en) * | 2012-11-12 | 2013-02-13 | 上海华力微电子有限公司 | Method for manufacturing dual-stress thin film and semiconductor component |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0640546B2 (en) | 1994-05-25 |
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