JPS62114226A - Ion beam exposure equipment - Google Patents
Ion beam exposure equipmentInfo
- Publication number
- JPS62114226A JPS62114226A JP25541285A JP25541285A JPS62114226A JP S62114226 A JPS62114226 A JP S62114226A JP 25541285 A JP25541285 A JP 25541285A JP 25541285 A JP25541285 A JP 25541285A JP S62114226 A JPS62114226 A JP S62114226A
- Authority
- JP
- Japan
- Prior art keywords
- distance
- ion source
- ion
- exposure
- ion beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0802—Field ionization sources
- H01J2237/0807—Gas field ion sources [GFIS]
Landscapes
- Electron Sources, Ion Sources (AREA)
- Electron Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
イオン源に対向しイオン源から放射されるイオンの放射
方向による強度分布を検知する検知手段を具え、イオン
ビームの軸合わせが可能なイオンビーム露光装置におい
て、
イオン源と検知手段との間の距離を可変にすることによ
り、
イオンビームの軸合わせの精度向上を可能にしたもので
ある。[Detailed Description of the Invention] [Summary] An ion beam exposure apparatus that is equipped with a detection means that faces an ion source and detects the intensity distribution according to the emission direction of ions emitted from the ion source, and that is capable of aligning the axis of the ion beam. By making the distance between the ion source and the detection means variable, it is possible to improve the accuracy of ion beam alignment.
本発明は、イオンビームの軸合わせが可能なイオンビー
ム露光装置の構成に関す。The present invention relates to the configuration of an ion beam exposure apparatus that can align the axis of an ion beam.
イオンと一ム（ＩＢ）露光は、半導体装置の製造などに
おいて微細パターンの露光に現在多用されている電子ビ
ーム（ＥＢ）露光のＥＢをＩＢに変えたもので、ＥＢＷ
光に見られる固体中での電子の散乱による近接効果が殆
どないため、非常に高い分解能を持つ特徴があり、更に
ビームがイオンであるところからイオン注入機能やエツ
チング加工機能をも兼ね備えている。Ion and beam (IB) exposure is a variation of electron beam (EB) exposure, which is currently widely used for exposure of fine patterns in semiconductor device manufacturing, by replacing EB with IB.
Because there is almost no proximity effect caused by scattering of electrons in solids, which is seen in light, it has an extremely high resolution, and since the beam is ions, it also has ion implantation and etching functions.
そしてＩＢ露光装置は、電子銃がイオン源に変わる点を
除けば、ＥＢ露光装置と略同じ構成をなしている。The IB exposure apparatus has substantially the same configuration as the EB exposure apparatus, except that the electron gun is replaced with an ion source.
イオン源には、液体金属をイオン化する液体金属イオン
源と、ガスをイオン化する電界電離型ガスイオン源があ
り、何れも先端が鋭くとがった（半径が、液体金属イオ
ン源にあっては１〜１０μｍ程度、電界電離型ガスイオ
ン源にあっては１０２〜１０３人程度）高融点金属例え
ばタングステンのエミッタチップを具え、エミッタチッ
プの先端からＩＢを放射する。Ion sources include liquid metal ion sources that ionize liquid metal, and field ionization type gas ion sources that ionize gas, and both have a sharp tip (the radius of the liquid metal ion source is 1 to 1). An emitter tip of a high melting point metal such as tungsten is provided, and IB is emitted from the tip of the emitter tip.
特に後者は、ＩＢのエネルギー分布幅が狭く （１ｅＶ
程度以下）、且つ集束性に優れ（試算上１００人φまで
到達）、またかなり長時間にわたり電流が安定している
ので、ＩＢリソグラフィ用に適している。In particular, the latter has a narrow IB energy distribution width (1 eV
It is suitable for IB lithography because it has excellent focusing properties (up to 100 φ according to a trial calculation), and the current is stable for quite a long time.
しかしながらこのイオン源は、エミッタチップ先端の形
状や原子レベルの凹凸を反映した電界分布により、大小
様々の強度（即ち角電流密度）を有する複数のＩＢを離
散的に放射するので、露光に使用するのに通した強度の
高いＩＢの方向は、エミッタチップの軸方向に一致しな
いことが多い。However, this ion source discretely emits multiple IBs with varying intensities (i.e., angular current density) due to the electric field distribution reflecting the shape of the tip of the emitter tip and the unevenness at the atomic level. The direction of the strong IB passed through the emitter chip often does not coincide with the axial direction of the emitter chip.
このため所望のＩＢを露光に使用するためには、エミッ
タチップの軸方向を調整して該ＩＢの軸合わせを行う必
要があるが、この軸合わせは精度を良くすることが望ま
れる。Therefore, in order to use a desired IB for exposure, it is necessary to align the IB by adjusting the axial direction of the emitter chip, and it is desirable to improve the accuracy of this alignment.
〔従来の技術〕
第２図は上記軸合わせが可能な従来のＩＢ露光装置例の
模式側断面図である。[Prior Art] FIG. 2 is a schematic side sectional view of an example of a conventional IB exposure apparatus capable of the above-mentioned axis alignment.
同図において、１はイオン源、１ａはイオン源１のエミ
ッタチップ、２と３はレンズ、４はブランキング電極、
５はスキャニング電極、６はステージ、Ｗはウェーハな
どの被露光体である。In the figure, 1 is an ion source, 1a is an emitter chip of ion source 1, 2 and 3 are lenses, 4 is a blanking electrode,
5 is a scanning electrode, 6 is a stage, and W is an exposed object such as a wafer.
また、７は例えば電子増倍板（通称マイクロチャンネル
プレート）付き螢光スクリーンからなりイオン源１から
放射されるイオンの放射方向による強度分布を可視の影
像に変換する検知手段、８は上記影像を窓９から観察出
来るようにするミラー、１０はイオン源１の軸方向を可
変にする方向調整機構（通称ジンバル）、１１は方向調
整機構１０の操作により動くイオン源１に追随し露光装
置の真空を保つベローズ、である。Further, 7 is a detection means which is made of, for example, a fluorescent screen equipped with an electron multiplier plate (commonly known as a microchannel plate) and converts the intensity distribution of the ions emitted from the ion source 1 according to the radiation direction into a visible image, and 8 is a detection means that converts the above image into a visible image. A mirror that allows observation through a window 9; 10 a direction adjustment mechanism (commonly known as a gimbal) that changes the axial direction of the ion source 1; and 11 a direction adjustment mechanism (commonly known as a gimbal) that changes the axial direction of the ion source 1; There is a bellows, which keeps the
この露光装置は、エミッタチップ１ａから放射したＩＢ
を、レンズ２と３とによりステージ６に載置された被露
光体Ｗ上に集束し、スキャニング電極５により偏向させ
ながら露光する。非露光の際偏向させる。この操作を行
う際には、検知手段７とミラー８をＩＢの通路から退避
させておく。This exposure apparatus uses an IB emitted from an emitter chip 1a.
is focused by the lenses 2 and 3 onto the exposed object W placed on the stage 6, and exposed while being deflected by the scanning electrode 5. Deflect when not exposed. When performing this operation, the detection means 7 and mirror 8 are moved away from the IB passage.
この露光に先立ち、先に述べたＩＢの軸合わせを行う。Prior to this exposure, the aforementioned IB axis alignment is performed.
即ち、検知手段７とミラー８をイオン源１の下に位置さ
せて、先ずイオン源１から離散的に放射される複数のＩ
Ｂの強度分布を観察する。強度分布は、検知手段７の下
面に第３図のような影像として現れ、影像面Ｓ上のパタ
ーンや輝度により各ＩＢの強度の違いと位置が判る。That is, the detection means 7 and the mirror 8 are positioned below the ion source 1, and a plurality of I
Observe the intensity distribution of B. The intensity distribution appears as an image on the lower surface of the detection means 7 as shown in FIG. 3, and the difference in intensity and position of each IB can be determined from the pattern and brightness on the image plane S.
露光軸に軸が合致しているＩＢが影像面Ｓの中心Ｃに位
置するが、露光に使用するのに適した強度の高い所望の
ＩＢは、中心Ｃから外れている場合が多い。これは、エ
ミッタチップ１ａが例えばタングステンの場合、通常タ
ングステン結晶の（１１１）面から放射されるＩＢに所
望のＩＢが存在するからである。An IB whose axis coincides with the exposure axis is located at the center C of the image plane S, but a desired IB with high intensity suitable for use in exposure is often located away from the center C. This is because when the emitter tip 1a is made of tungsten, for example, a desired IB exists in the IB emitted from the (111) plane of the tungsten crystal.
次いで、方向調整機構１０を操作して所望のＩＢが影像
面Ｓの中心Ｃに合致するようにイオン源１の軸方向を調
整する。方向調整機構１０は、その操作にかかわらずエ
ミッタチップ１ａの先端位置を変化させないようになっ
ている。この調整が終了したところで露光に先立つＩＢ
の軸合わせを完了する。Next, the direction adjustment mechanism 10 is operated to adjust the axial direction of the ion source 1 so that the desired IB coincides with the center C of the image plane S. The direction adjustment mechanism 10 is configured not to change the position of the tip of the emitter tip 1a regardless of its operation. Once this adjustment is completed, the IB before exposure
Complete the alignment.
しかしながら上記ＩＢの軸合わせを行うに際して、影像
面Ｓの中心Ｃに対する所望のＩＢの合致状態の判定は、
影像面Ｓの観察で行われるため精度に限界がある。However, when performing the axis alignment of the IB, the determination of the desired state of alignment of the IB with the center C of the image plane S is as follows:
Since this is performed by observing the image plane S, there is a limit to accuracy.
一方上記ＩＢ露光装五は、収差を小さくするためエミッ
タチップ１ａの先端（ＩＢの放射点）からレンズ２まで
の距離が小さく設定されており、これに伴い検知手＠７
までの距離しも小さくなっている。On the other hand, in the above-mentioned IB exposure device 5, the distance from the tip of the emitter chip 1a (IB radiation point) to the lens 2 is set small in order to reduce aberrations, and accordingly, the detection hand @ 7
The distance is also getting smaller.
このため上記構成のＩＢ露光装置では、精度の良い軸合
わせが困難である問題がある。For this reason, the IB exposure apparatus having the above configuration has a problem in that accurate axis alignment is difficult.
上記問題点は、上述した方向調整機構１０と検知手段７
とを具えるＩＢ露光装置に、イオン源１と検知手段７と
の間の距離を可変にする移動機構を付加した本発明のＩ
Ｂｉ光装置によって解決される。The above problem is caused by the direction adjustment mechanism 10 and the detection means 7 described above.
The IB exposure apparatus of the present invention includes a moving mechanism for varying the distance between the ion source 1 and the detection means 7.
This problem is solved by Bi optical equipment.
影像面Ｓの観察による中心Ｃに対する所望のＩＢの合致
状態の判定精度が従来と同じであっても、エミッタチッ
プｌａの先端から検知手段７までの距離りを大きくすれ
ば影像面Ｓの影像が拡大されるので、ＩＢＯ軸合わせ精
度を向上させることが出来る。Even if the accuracy of determining the matching state of the desired IB with respect to the center C by observing the image plane S is the same as before, if the distance from the tip of the emitter chip la to the detection means 7 is increased, the image on the image plane S will be Since it is enlarged, the IBO alignment accuracy can be improved.
従って上記移動機構を付加して距離りを大きくすること
が出来るようにしたＩＢ露光装置は、精度の良い軸合わ
せが可能になる。Therefore, an IB exposure apparatus that can increase the distance by adding the above-mentioned moving mechanism can perform axis alignment with high precision.
以下本発明の実施例について第１図の模式側断面図によ
り説明する。全図を通じ同一符号は同一対象物を示す。Embodiments of the present invention will be described below with reference to the schematic side sectional view of FIG. The same reference numerals indicate the same objects throughout the figures.
第１図に示す実施例なるＩＢ露光装置は、第２図図示の
従来例に、イオン源１の検知手段７からの距離を可変に
するよう方向調整機構１０を矢印方向に移動させる移動
機構１２を付加したものである。The IB exposure apparatus shown in FIG. 1 has a moving mechanism 12 which moves a direction adjustment mechanism 10 in the direction of the arrow so as to vary the distance from the detection means 7 of the ion source 1 to the conventional example shown in FIG. is added.
゛これに伴いベローズ（従来例の１１）は、伸縮範囲を
大きくしたｌｌａに変わっている。その他は基本的に従
来例と同じである。``Along with this, the bellows (11 in the conventional example) has been replaced with lla, which has a larger expansion and contraction range. Other aspects are basically the same as the conventional example.
移動機構１２は、例えば油圧で駆動されるものであり、
方向調整機構１０の移動可能範囲は、エミッタチップ１
ａ先端の検知手段７からの距％１ｔＬが露光時の状態か
らその５〜１０倍程度に至る範囲、例えば露光時におい
て約２０鶴の場合１００〜２００Ｈ程度まで大きく出来
る範囲である。The moving mechanism 12 is driven by hydraulic pressure, for example,
The movable range of the direction adjustment mechanism 10 is the emitter chip 1
The distance % 1tL of the tip a from the detection means 7 can be increased from the state at the time of exposure to about 5 to 10 times, for example, in the case of about 20 cranes at the time of exposure, it can be increased to about 100 to 200H.
このＩＢｎ光装置におけるＩＢＯ軸合わせは次の手順で
行う。IBO axis alignment in this IBn optical device is performed in the following procedure.
即ち、先ず距離りを小さく例えば露光時と同じにして従
来例で説明した軸合わせ（第３図参照）を行う。次いで
距離りを太き（例えば最大にする。That is, first, the distance is made small, for example, the same as that during exposure, and the axis alignment described in the conventional example (see FIG. 3) is performed. Then increase the distance (for example, maximize it).
さすれば影像面Ｓの影像は距％ｌＩＬが増加した倍率に
拡大され、所望のＩＢの中心Ｃに対する合致状態がより
精度良く観察出来るようになる。そこで再度方向調整機
構１０を操作して合致不足分の調整を行う。次いで距離
りを露光時の状態に復帰させてＩＢの軸合わせを完了す
る。Then, the image on the image plane S is enlarged to a magnification that increases the distance %lIL, and the state of coincidence of the desired IB with the center C can be observed with higher accuracy. Then, the direction adjustment mechanism 10 is operated again to make adjustments for the lack of matching. Next, the distance is returned to the state at the time of exposure, and the alignment of the IB is completed.
この軸合わせは、影像面Ｓの観察による判定精度が従来
と同じであっても従来より拡大された影像で判定出来る
ので、ＩＢの軸合わせ精度が従来より上記倍率に応じて
向上する。Even if the determination accuracy based on observation of the image plane S is the same as in the past, this alignment can be determined using an image that is more enlarged than in the past, so the accuracy of IB alignment improves more than in the past in accordance with the magnification.
またこの軸合わせにおいて、最初から距離りを大きくし
ても良いが、その場合は影像面Ｓの視野が狭まっている
ので最適な所望のＩＢが視野外に来て見落とされる恐れ
がある。このため面倒でも上に述べたようにするのが望
ましい。In addition, in this alignment, the distance may be increased from the beginning, but in that case, since the field of view of the image plane S is narrowed, there is a risk that the optimal desired IB may come out of the field of view and be overlooked. For this reason, it is desirable to do as described above, even if it is troublesome.
なお上記実施例では距離りの最短を露光時と同じにし拡
大倍率を５〜１０にしたがそれに限定されるものではな
く、また移動機構１２は油圧駆動にしたが他の手段によ
っても良いことは、本発明の原理からして容易に理解出
来る。In the above embodiment, the shortest distance was the same as that during exposure and the magnification was set to 5 to 10, but the invention is not limited thereto, and although the moving mechanism 12 was hydraulically driven, other means may also be used. , can be easily understood from the principle of the present invention.
以上説明したように本発明の構成によれば、ＩＢＯ軸合
わせが可能なＩＢ露光装置において、軸合わせの精度を
向上させる効果がある。As described above, the configuration of the present invention has the effect of improving the accuracy of axis alignment in an IB exposure apparatus capable of IBO axis alignment.
第１図は本発明実施例の模式側断面図、第２図は従来の
ＩＢｉ光装置例の模式側断面図、第３図はイオンの強度
分布影像の説明図、である。
図において、
１はイオン源、
１ａはエミッタチップ、
２．３はレンズ、
４はブランキング電極、
５はスキャニング電極、
６はステージ、
７は検知手段、
８はミラー、
９は窓、
１０は方向調整機構、
１１、ｌｌａはベローズ、
１２は移動機構、
Ｌは１ａ先端と７との間の距離、
Ｗは被露光体、
Ｓは影像面、
ＣはＳの中心、
である。
図Ｉの浄３（内容に変更なし）
木ノ角≦ ９１４ ｔ Ｑ＋ｌ ｄ） オヂ ｊ久
こ イロ１１ 珪ｊｉ レフ第 １ 図
第２ 図
イオン６１強廣４巧ト景うイ楡０説叫Ｕ図％ ３ 図
手続補正書（旗
０年月日
６１．２．１？
昭和６０年特許願第２５５４１２号
１の名称
イオンビームＭＯ装置
二をする者
二との関係 特許出願人
住所 神奈川県用崎市中原区上小田中１０１５番地（５
２２）名称富士通株式会社
埋入
住所 神奈川県川崎市中原区上小田中１０１５番地富士
通株式会社内
昭和６１年 １月２８日 （発送日）
三の対象
図面（全１
７、補正の内容
ｌＯ。FIG. 1 is a schematic side sectional view of an embodiment of the present invention, FIG. 2 is a schematic side sectional view of an example of a conventional IBi optical device, and FIG. 3 is an explanatory diagram of an ion intensity distribution image. In the figure, 1 is an ion source, 1a is an emitter chip, 2.3 is a lens, 4 is a blanking electrode, 5 is a scanning electrode, 6 is a stage, 7 is a detection means, 8 is a mirror, 9 is a window, 10 is a direction The adjustment mechanism, 11 and lla are bellows, 12 is a moving mechanism, L is the distance between the tip of 1a and 7, W is the object to be exposed, S is the image plane, and C is the center of S. Figure I, Jyo 3 (No change in content) Kinokaku ≦ 914 t Q+l d) Oji j Kuko Iro 11 Keiji Lev 1 Figure 2 Figure Aeon 61 Takuhiro 4 Takuto Kei Yue 0 Theory shout U Figure % 3 Drawing procedure amendment (flag 0 year/month/date 61.2.1? 1985 Patent Application No. 255412 1) Name of ion beam MO device 2 Relationship with person 2 Patent applicant address Yozaki, Kanagawa Prefecture 1015 Kamiodanaka, Nakahara-ku, City (5
22) Name Fujitsu Ltd. Address 1015 Kamiodanaka, Nakahara-ku, Kawasaki-shi, Kanagawa Prefecture Fujitsu Ltd. January 28, 1986 (Shipping date) 3 subject drawings (total 1 7, contents of amendments)
lO.
Claims (1)
ン源に対向し該イオン源から放射されるイオンの放射方
向による強度分布を検知する検知手段と、該イオン源と
該検知手段との間の距離を可変にする移動機構とを具え
ることを特徴とするイオンビーム露光装置。a direction adjustment mechanism that changes the axial direction of the ion source; a detection means that faces the ion source and detects the intensity distribution of ions emitted from the ion source according to the emission direction; An ion beam exposure apparatus characterized by comprising a moving mechanism that changes the distance between the ion beams.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25541285A JPS62114226A (en) | 1985-11-14 | 1985-11-14 | Ion beam exposure equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25541285A JPS62114226A (en) | 1985-11-14 | 1985-11-14 | Ion beam exposure equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62114226A true JPS62114226A (en) | 1987-05-26 |
Family
ID=17278405
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25541285A Pending JPS62114226A (en) | 1985-11-14 | 1985-11-14 | Ion beam exposure equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62114226A (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6319744A (en) * | 1986-07-11 | 1988-01-27 | Sony Corp | Ion-beam generator for gaseous ion-source system |
| JPH02192727A (en) * | 1989-01-20 | 1990-07-30 | Sony Corp | Focusing ion beam device |
| JP2008140557A (en) * | 2006-11-30 | 2008-06-19 | Hitachi High-Technologies Corp | Gas field ionization ion source, and scanning charged particle microscope |
| JP2009517838A (en) * | 2005-12-02 | 2009-04-30 | アリス コーポレーション | Ion source, system and method |
| JP2009164110A (en) * | 2007-12-14 | 2009-07-23 | Hitachi High-Technologies Corp | Gas field ionization ion source, scanning charged particle microscope, optical axis adjustment method, and sample observation method |
| WO2009147894A1 (en) * | 2008-06-05 | 2009-12-10 | 株式会社日立ハイテクノロジーズ | Ion beam device |
| JP2011141037A (en) * | 2006-10-25 | 2011-07-21 | Akebono Brake Ind Co Ltd | Friction pad assembly for disk brake |
| JP2011524072A (en) * | 2008-06-13 | 2011-08-25 | カール ツァイス エヌティーエス エルエルシー | Ion source, system and method |
| DE112010002774T5 (en) | 2009-06-30 | 2012-10-18 | Hitachi High-Technologies Corporation | ION MICROSCOPE |
| US9012867B2 (en) | 2003-10-16 | 2015-04-21 | Carl Zeiss Microscopy, Llc | Ion sources, systems and methods |
| US11320011B2 (en) | 2017-09-06 | 2022-05-03 | Akebono Brake Industry Co., Ltd. | Caliper for opposed piston-type disc brake |
-
1985
- 1985-11-14 JP JP25541285A patent/JPS62114226A/en active Pending
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6319744A (en) * | 1986-07-11 | 1988-01-27 | Sony Corp | Ion-beam generator for gaseous ion-source system |
| JPH02192727A (en) * | 1989-01-20 | 1990-07-30 | Sony Corp | Focusing ion beam device |
| US9236225B2 (en) | 2003-10-16 | 2016-01-12 | Carl Zeiss Microscopy, Llc | Ion sources, systems and methods |
| US9012867B2 (en) | 2003-10-16 | 2015-04-21 | Carl Zeiss Microscopy, Llc | Ion sources, systems and methods |
| JP2012138360A (en) * | 2005-12-02 | 2012-07-19 | Arisu Corporation:Kk | Ion sources, system and method |
| JP2009517838A (en) * | 2005-12-02 | 2009-04-30 | アリス コーポレーション | Ion source, system and method |
| JP2011141037A (en) * | 2006-10-25 | 2011-07-21 | Akebono Brake Ind Co Ltd | Friction pad assembly for disk brake |
| JP2008140557A (en) * | 2006-11-30 | 2008-06-19 | Hitachi High-Technologies Corp | Gas field ionization ion source, and scanning charged particle microscope |
| JP2009164110A (en) * | 2007-12-14 | 2009-07-23 | Hitachi High-Technologies Corp | Gas field ionization ion source, scanning charged particle microscope, optical axis adjustment method, and sample observation method |
| JP5097823B2 (en) * | 2008-06-05 | 2012-12-12 | 株式会社日立ハイテクノロジーズ | Ion beam equipment |
| US8779380B2 (en) | 2008-06-05 | 2014-07-15 | Hitachi High-Technologies Corporation | Ion beam device |
| WO2009147894A1 (en) * | 2008-06-05 | 2009-12-10 | 株式会社日立ハイテクノロジーズ | Ion beam device |
| US9508521B2 (en) | 2008-06-05 | 2016-11-29 | Hitachi High-Technologies Corporation | Ion beam device |
| JP2011524072A (en) * | 2008-06-13 | 2011-08-25 | カール ツァイス エヌティーエス エルエルシー | Ion source, system and method |
| US9029765B2 (en) | 2008-06-13 | 2015-05-12 | Carl Zeiss Microscopy, Llc | Ion sources, systems and methods |
| DE112010002774T5 (en) | 2009-06-30 | 2012-10-18 | Hitachi High-Technologies Corporation | ION MICROSCOPE |
| US8455841B2 (en) | 2009-06-30 | 2013-06-04 | Hitachi High-Technologies Corporation | Ion microscope |
| DE112010002774B4 (en) | 2009-06-30 | 2019-12-05 | Hitachi High-Technologies Corporation | ION MICROSCOPE |
| US11320011B2 (en) | 2017-09-06 | 2022-05-03 | Akebono Brake Industry Co., Ltd. | Caliper for opposed piston-type disc brake |
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