JPS62114132A - Sputtering target for optical recording and its production - Google Patents
Sputtering target for optical recording and its productionInfo
- Publication number
- JPS62114132A JPS62114132A JP25290885A JP25290885A JPS62114132A JP S62114132 A JPS62114132 A JP S62114132A JP 25290885 A JP25290885 A JP 25290885A JP 25290885 A JP25290885 A JP 25290885A JP S62114132 A JPS62114132 A JP S62114132A
- Authority
- JP
- Japan
- Prior art keywords
- tellurium
- selenium
- target
- sputtering
- optical recording
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Powder Metallurgy (AREA)
- Physical Vapour Deposition (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Manufacturing Optical Record Carriers (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野〕
本発明は、画像ファイルや文書ファイル及びコード情報
ファイルなどの追記型(DRAW:direct r
ead after write )の光記録用
ディスクのスパッタリング用成膜原料となるターゲット
の製造方法に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention is applicable to write-once (DRAW: direct r.
The present invention relates to a method for producing a target that is a raw material for sputtering an optical recording disk (read after write).
[従来の技術]
光デイスクメモリーの特徴は、第一に記憶容量の大きさ
にある。磁気ディスクやVTRに比べ単位面積当たりの
記録密度は、実用システムで考えた場合、少なくとも1
0倍かそれ以上と高い。最近では、垂直磁化膜の開胤に
より大容量の磁気記録メモリーの出現が期待されている
が、磁気記録方式では記録読み出し時にヘッドとディス
クとのタッチアンドランによる摩耗損傷が避けられず、
寿命の問題をかかえている。[Prior Art] The first characteristic of optical disk memory is its large storage capacity. Compared to magnetic disks and VTRs, the recording density per unit area is at least 1
It is as high as 0 times or more. Recently, the emergence of large-capacity magnetic recording memories is expected due to the development of perpendicularly magnetized films, but with magnetic recording methods, wear and tear due to touch-and-run between the head and the disk cannot be avoided during recording and reading.
I am facing a lifespan problem.
これに対し光の場合は波長とレンズの開口により制限は
受けるものの、レーザーを使用することにより、およそ
直径1μm以下の微小スポットを形成出来るため高いポ
テンシャルを持っている。On the other hand, in the case of light, although it is limited by the wavelength and the aperture of the lens, it has a high potential because it is possible to form a minute spot with a diameter of about 1 μm or less by using a laser.
第二の特徴として非接触で記録再生が可能であるという
ことである。これにより、ディスク及びハードウェアの
摩耗損傷がなく寿命が長くなるとともにその信頼性も高
い。The second feature is that recording and playback can be performed without contact. As a result, there is no wear and tear on the disk and hardware, resulting in a longer lifespan and higher reliability.
光デイスクメモリーのうち再生専用型(ROM:rea
d only memory )のものは光ビデ
オディスクやコンパクトディスクとして広く普及してき
ており、今回の発明の中心をなす追記型の静止画ディス
クファイルや文書ファイル等も一部実用化されている。Among optical disk memories, read-only (ROM: rea)
d only memory) have become widely used as optical video discs and compact discs, and some of the write-once type still image disc files and document files that form the core of this invention have also been put into practical use.
従来光ディスクの製造は、蒸着法または複合ターゲット
(数種の金属をモザイク状に組み合せたもの、もしくは
一種金属の上に他の金属を乗せたものを言う、)による
スパッタリング法、あるいは単一金属で構成されたター
ゲットを複数個用いる多元スパッタリング法等がもちい
られてきた。Traditionally, optical disks have been manufactured using vapor deposition methods, sputtering methods using a composite target (a combination of several metals in a mosaic pattern, or one metal on top of another), or a sputtering method using a single metal. Multidimensional sputtering methods using a plurality of configured targets have been used.
これは膜組成の検討や、単一金属の方が従来の合金ター
ゲットに比べ高純度のものが得られる為であるが、一方
で装置構成の複雑さ、連続的な膜組成のコントロールの
難しさのため連続化が困難で生産性が低く、コストが高
いという欠点があった。This is due to the consideration of film composition and the fact that a single metal can provide a higher purity target than conventional alloy targets, but on the other hand, the complexity of the equipment configuration and the difficulty of continuously controlling the film composition Therefore, there were drawbacks such as difficulty in continuous production, low productivity, and high cost.
[発明が解決しようとしている問題点]本発明は上述の
ような従来の技術で難しかった、連続的に膜組成のコン
トロールが可能なスパッタリングを可能とする、均一組
成で且つ大型の高生産性がはかれる合金ターゲットの製
造方法を提供するものである。[Problems to be solved by the invention] The present invention enables sputtering that enables continuous control of the film composition, which was difficult with the conventional techniques as described above, and enables a large-scale, high-productivity film with a uniform composition. The present invention provides a method for manufacturing an alloy target that can be measured.
[問題点を解決する為の手段]
本発明は、テルル及びセレンの合金にインジウムを含み
、実質的に均一組成でほぼ理論密度に等しい成型体より
なる光記録用スパッタリングターゲットを提供するもの
であり、またその製造方法として、テルル及びセレンを
真空下またはアルゴン、窒素、ヘリウムなどの不活性ガ
ス雰囲気下で加熱溶解、鋳造し、これを急冷し、粉砕し
た合金粉末にインジウムを加え、非酸化雰囲気下で微粉
砕混合し、得られた微粉末混合物を、直接ホットプレス
するか、または冷間静水圧プレス(CI P)により、
圧粉体とし、更にホットプレスし、実質的に均一組成で
ほぼ理論密度に等しい成型体とすることを特徴とする光
記録用スパッタリングターゲットの製造方法を提供する
ものである。[Means for Solving the Problems] The present invention provides a sputtering target for optical recording comprising a molded body containing indium in an alloy of tellurium and selenium, having a substantially uniform composition and having approximately the same theoretical density. , and its manufacturing method involves melting and casting tellurium and selenium under vacuum or an inert gas atmosphere such as argon, nitrogen, helium, etc., quenching this, adding indium to the pulverized alloy powder, and casting in a non-oxidizing atmosphere. The resulting fine powder mixture is directly hot pressed or by cold isostatic pressing (CI P).
The present invention provides a method for producing a sputtering target for optical recording, which is characterized in that the compact is made into a compact, which is then hot-pressed to obtain a molded product having a substantially uniform composition and approximately the same theoretical density.
本発明において、各元素の混合割合は、一般にテルルが
60at%以上100at%未満、セレンが30at%
以下、インジウムが20at%以下が採用される。In the present invention, the mixing ratio of each element is generally 60 at% or more but less than 100 at% for tellurium and 30 at% for selenium.
Hereinafter, indium of 20 at% or less is employed.
次に本発明のターゲットの製造方法について説明する。Next, a method for manufacturing a target according to the present invention will be explained.
まずテルル及びセレンを真空下またはアルゴン。First, remove tellurium and selenium under vacuum or argon.
窒素、ヘリウム等の不活性ガス雰囲気下で加熱溶解、鋳
造し、これを急冷し、粉砕した合金粉末に、インジウム
を加え、これを非酸化雰囲気下、例えば有機溶媒中で微
粉砕混合し、得られた微粉末混合物(平均粒径:1〜1
00μm−好ましくは2〜20μm)を、混線機で十分
に混合し、冷間静水圧プレス(CI P)で1〜5 t
on /cd、好ましくは3〜5ton/c−に加圧し
圧粉体を得た後に所定のサイズのホットプレス用インゴ
ットとする。Indium is added to the alloy powder, which is heated and melted in an inert gas atmosphere such as nitrogen or helium, cast, and then rapidly cooled and ground. fine powder mixture (average particle size: 1 to 1
00 μm - preferably 2 to 20 μm) are thoroughly mixed in a mixer and pressed in a cold isostatic press (CI P) for 1 to 5 t.
on/cd, preferably 3 to 5 ton/c- to obtain a green compact, which is then made into a hot press ingot of a predetermined size.
粉末のままホットプレスする場合は、その粉末を乾燥さ
せ均一に混合し原料とする。ここで用いるテルル粉末等
の原料粉末の粒径は200μm以下のものが一般的に用
いられる。これをホットプレスを用い300〜450℃
、好ましくは350〜400℃、不活性ガス雰囲気下で
10kg/c−以上、好ましくは75〜200kg/c
Jの圧力で加熱加圧し成形体を得る。When hot pressing the powder, the powder is dried and mixed uniformly to form the raw material. The particle size of the raw material powder such as tellurium powder used here is generally 200 μm or less. This is heated to 300-450℃ using a hot press.
, preferably 350 to 400°C, under an inert gas atmosphere, 10 kg/c or more, preferably 75 to 200 kg/c
Heat and press at a pressure of J to obtain a molded body.
この成形体をワイヤー放電加工機、バンドソーなどの切
断加工機にて切断、仕」二加工を行い所定の形状の光記
録用スパッタリングターゲットとする。This molded body is cut and processed using a cutting machine such as a wire electric discharge machine or a band saw to obtain a sputtering target for optical recording in a predetermined shape.
[発明の効果]
このようにして得られたターゲットは実質的に均一組成
であり、はぼ理論密度に等しいものである。[Effects of the Invention] The target thus obtained has a substantially uniform composition and has approximately the same theoretical density.
本発明により得られた光記録用ターゲットはスパッタリ
ングにより成膜され光ディスクとされる。The optical recording target obtained according to the present invention is formed into a film by sputtering to form an optical disc.
この場合、従来の複合ターゲット(モザイク状)、単一
金属にその他の金属のチップを乗せただけのターゲット
より成膜して得た光ディスクに比べ次−〇 −
の様な利点がある。In this case, there are the following advantages compared to an optical disk obtained by forming a film from a conventional composite target (mosaic type) or a target in which chips of other metals are mounted on a single metal.
(1)ターゲットと同一組成の膜が得られスパッタリン
グ条件が安定化する。(1) A film having the same composition as the target is obtained and the sputtering conditions are stabilized.
(2)連続スパッタリングが可能となり、生産性の向上
が期待されコストダウンが図れる。(2) Continuous sputtering becomes possible, improving productivity and reducing costs.
[実施例]
以下本発明を実施例により説明する。本発明はこれらの
実施例により同等制限されるものではない。[Examples] The present invention will be explained below using examples. The present invention is not equally limited by these examples.
実施例1
高周波誘導溶解炉にて、30kgの鋳塊を得るため、T
e 91.88wt%、Se 8.12wt%の割
合でアルゴンガス600mmHg、 450〜500
℃で溶解し、この溶湯を、アルゴンガス雰囲気下でカー
ボン鋳型に鋳造し、得られた鋳塊をクラッシャーを用い
て粗粉砕し、平均粒径200μmの合金粉末を得た。こ
れに、Te−3e 80゜89wt%、In 19
.11wt%の割合でIn粉末(平均粒径:150μm
)を加え、ボールミルを用いてシクロヘキサン中で60
分間微粉砕混合し、十分乾燥し、ホットプレス用原料粉
末(Te70、Se 10.In 20 (at%
))を得た。Example 1 In order to obtain a 30 kg ingot in a high frequency induction melting furnace, T
Argon gas 600 mmHg at a ratio of e 91.88 wt% and Se 8.12 wt%, 450-500
℃, the molten metal was cast into a carbon mold under an argon gas atmosphere, and the obtained ingot was coarsely crushed using a crusher to obtain an alloy powder with an average particle size of 200 μm. In addition, Te-3e 80°89wt%, In 19
.. In powder (average particle size: 150 μm) at a ratio of 11 wt%
) in cyclohexane using a ball mill.
Finely pulverize and mix for a minute, dry thoroughly, and prepare raw material powder for hot pressing (Te70, Se 10.In 20 (at%
)) was obtained.
得られた粉末をゴム型につめ、冷間静水圧プレス(CI
P)を用いて、5ton/cdで加圧成型し、得られ
た圧粉体を152.4mmφX30+++m に加工
し、十分乾燥したのち、ホットプレスを用い、アルゴン
雰囲気、380℃、 100kg/cdで加熱加圧し
、成形体(H,P、成形体)を得た。The obtained powder was packed into a rubber mold and cold isostatically pressed (CI).
P) at 5 ton/cd, and the obtained green compact was processed into 152.4 mmφ x 30+++ m, thoroughly dried, and then heated using a hot press at 380°C and 100 kg/cd in an argon atmosphere. Pressure was applied to obtain a molded body (H, P, molded body).
この成形体をワイヤー放電加工機にて切断加工し、15
2.4順φ×5ml1tのターゲットを製造した。こう
して得られたターゲットは、表1に示す通り、理論密度
に近いものであった。This molded body was cut using a wire electrical discharge machine, and
A target of 2.4 order φ x 5 ml 1 t was manufactured. As shown in Table 1, the target thus obtained had a density close to the theoretical density.
実施例2
Te−8eに関しては、実施例1と同じ条件でTe
93.21vt%、Se 6.79vt%の割合で製
造し、これに、Te−8e 95.3wt%。Example 2 Regarding Te-8e, Te-8e was prepared under the same conditions as Example 1.
93.21 vt%, Se 6.79 vt%, and Te-8e 95.3 wt%.
In 4. 7vt%の割合でIn粉末(平均粒径:
150μm)を加え、ボールミルを用いてシクロヘキサ
ン中で60分間微粉砕混合し、十分乾燥し、ホットプレ
ス用原料粉末(Te 85.Se IQ、In5(
at%))を得た。In 4. In powder (average particle size:
150 μm) was added, pulverized and mixed for 60 minutes in cyclohexane using a ball mill, thoroughly dried, and hot press raw material powder (Te 85.Se IQ, In5 (
at%)) was obtained.
これを210mm X210mm X20mmtの
黒鉛型に充填し、ホットプレスを用い、アルゴン雰囲気
、400℃、 200kg/c−で加熱加圧し、成形
体(HoP、成形体)を得た。This was filled into a graphite mold of 210 mm x 210 mm x 20 mmt, and heated and pressed using a hot press at 400° C. and 200 kg/c in an argon atmosphere to obtain a molded body (HoP, molded body).
この成形体をワイヤー放電加工機にて切断加工し、21
0mm X210mm X5mn+tのターゲット
を製造した。こうして得られたターゲットは、表1に示
す通り、理論密度に近いものであった。This molded body was cut using a wire electric discharge machine, and
A target of 0 mm x 210 mm x 5 mn+t was manufactured. As shown in Table 1, the target thus obtained had a density close to the theoretical density.
表−1ホットプレス成形体の密度 [単位:g/ilTable-1 Density of hot press molded product [Unit: g/il
Claims (1)
的に均一組成でほぼ理論密度に等しい成型体よりなる光
記録用スパッタリングターゲット。 2)テルル及びセレンを真空下またはアルゴン、窒素、
ヘリウムなどの不活性ガス雰囲気下で加熱溶解、鋳造し
、これを急冷し、粉砕した合金粉末にインジウムを加え
、非酸化雰囲気下で微粉砕混合し、得られた微粉末混合
物を、直接ホットプレスするか、または冷間静水圧プレ
ス(CIP)により、圧粉体とし、更にホットプレスし
、実質的に均一組成でほぼ理論密度に等しい成型体とす
ることを特徴とする光記録用スパッタリングターゲット
の製造方法。[Claims] 1) A sputtering target for optical recording comprising a molded body containing indium in an alloy of tellurium and selenium, having a substantially uniform composition and having approximately the same theoretical density. 2) Tellurium and selenium under vacuum or argon, nitrogen,
Melt and cast by heating in an inert gas atmosphere such as helium, quench this, add indium to the crushed alloy powder, finely grind and mix in a non-oxidizing atmosphere, and directly hot press the resulting fine powder mixture. or by cold isostatic pressing (CIP) to produce a green compact, which is further hot pressed to form a compact with a substantially uniform composition and approximately the same theoretical density. Production method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25290885A JPS62114132A (en) | 1985-11-13 | 1985-11-13 | Sputtering target for optical recording and its production |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25290885A JPS62114132A (en) | 1985-11-13 | 1985-11-13 | Sputtering target for optical recording and its production |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62114132A true JPS62114132A (en) | 1987-05-25 |
Family
ID=17243838
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP25290885A Pending JPS62114132A (en) | 1985-11-13 | 1985-11-13 | Sputtering target for optical recording and its production |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62114132A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012001803A (en) * | 2010-06-21 | 2012-01-05 | Ulvac Japan Ltd | METHOD FOR MANUFACTURING In-Se ALLOY POWDER, SINTERED In-Se ALLOY, Ga-Se ALLOY POWDER, SINTERED Ga-Se ALLOY, In-Ga-Se ALLOY POWDER, SINTERED In-Ga-Se ALLOY, Cu-In-Ga-Se ALLOY POWDER, AND SINTERED Cu-In-Ga-Se ALLOY |
-
1985
- 1985-11-13 JP JP25290885A patent/JPS62114132A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012001803A (en) * | 2010-06-21 | 2012-01-05 | Ulvac Japan Ltd | METHOD FOR MANUFACTURING In-Se ALLOY POWDER, SINTERED In-Se ALLOY, Ga-Se ALLOY POWDER, SINTERED Ga-Se ALLOY, In-Ga-Se ALLOY POWDER, SINTERED In-Ga-Se ALLOY, Cu-In-Ga-Se ALLOY POWDER, AND SINTERED Cu-In-Ga-Se ALLOY |
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