JPS62113436A - External appearance inspection method for semiconductor pellet - Google Patents
External appearance inspection method for semiconductor pelletInfo
- Publication number
- JPS62113436A JPS62113436A JP60252944A JP25294485A JPS62113436A JP S62113436 A JPS62113436 A JP S62113436A JP 60252944 A JP60252944 A JP 60252944A JP 25294485 A JP25294485 A JP 25294485A JP S62113436 A JPS62113436 A JP S62113436A
- Authority
- JP
- Japan
- Prior art keywords
- picture
- image
- value
- semiconductor pellet
- inspected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Length Measuring Devices By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Image Processing (AREA)
- Image Analysis (AREA)
Abstract
Description
【発明の詳細な説明】
[発明の技術分野]
この発明は半導体ペレットの外観検査方法に関するらの
である。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method for inspecting the appearance of semiconductor pellets.
[発明の技術的背1]
画像処理技術や人工視覚装置の発展により、従来は人間
の視覚に全面的に依存していた検査作業等が最近では急
速に自動化されつつある。 このような自動化検査作業
に適用しうる微細パターン検査技術には種々の方式があ
り(たとえば電気学会誌、昭和53年11月号57頁参
照)、これらの方式はプリント配線基板やフォトマスク
、あるいは半導体ペレット等の物品の自動検査や自動組
立てにおいて実用化されている。[Technical Background of the Invention 1] Due to the development of image processing technology and artificial visual devices, inspection work, etc., which conventionally relied entirely on human vision, is rapidly becoming automated. There are various methods of fine pattern inspection technology that can be applied to such automated inspection work (see, for example, Journal of the Institute of Electrical Engineers of Japan, November 1973 issue, p. 57), and these methods can be applied to printed wiring boards, photomasks, or It has been put to practical use in automatic inspection and automatic assembly of products such as semiconductor pellets.
[背景技術の問題点]
前記した従来の微細パターン検査技術は二値画像による
パターン検査方法であるが、この方法には次のような問
題点があり、従って、たとえば半導体ペレット等の自動
検査には適していなかった。[Problems in the Background Art] The conventional fine pattern inspection technology described above is a pattern inspection method using binary images, but this method has the following problems, and therefore is not suitable for automatic inspection of semiconductor pellets, etc. was not suitable.
(i) 被検査物の画像を得る場合、何らかの照明装
置を用いて照明するが、照度の変動があると精度のよい
二値画像が得られない。 精度の高い二値画像を得るた
めには照度の変動に対してスレッショールドレベルを常
に最適値にするように変化させる必要があるが、これは
実際には困難である。 また、安定した二値化を行うた
めには被検査物に対して均一な照明を行うことが必要で
あるが、このような照明を行うことは不可能である。(i) When obtaining an image of an object to be inspected, some type of illumination device is used to illuminate the object, but if there are variations in illuminance, a highly accurate binary image cannot be obtained. In order to obtain a highly accurate binary image, it is necessary to constantly change the threshold level to the optimum value in response to variations in illuminance, but this is difficult in practice. Further, in order to perform stable binarization, it is necessary to uniformly illuminate the object to be inspected, but such illumination is impossible.
(ii) 二値画像を用いる方法では半導体ベレット
の表面に付着している薄い汚れを検出できない。(ii) A method using a binary image cannot detect thin dirt adhering to the surface of a semiconductor pellet.
(iii ) 外観検査後に欠陥の形状や位置並びに
大きさや欠陥の程度(庇の深さ、汚れ度合)等を測定す
る方法が確立されていない。(iii) There is no established method for measuring the shape, position and size of defects, degree of defects (depth of eaves, degree of contamination), etc. after visual inspection.
(iv) 前記微細パターン検査技術を応用した二値
化パターン投影方法による外観自動検査装置も実用化さ
れているが(たとえば富士時報52巻第8号、 197
9) 、この方法では複数の欠陥や複雑なパターンの外
観検査は不可能であり、複数の半導体ベレットの外観検
査を同時的に行うことはできない。(iv) Automatic appearance inspection equipment using a binary pattern projection method applying the fine pattern inspection technology has also been put into practical use (for example, Fuji Jiho Vol. 52, No. 8, 197).
9) With this method, visual inspection of multiple defects or complex patterns is not possible, and visual inspection of multiple semiconductor pellets cannot be performed simultaneously.
[発明の目的]
この発明の目的は、前記従来技術の問題点を解決し、半
導体ベレットの外観を従来方法よりも高精度に、且つ実
用的に検査することのできる、半導体ベレットの外観検
査方法を提供することである。[Object of the Invention] An object of the present invention is to provide a method for inspecting the appearance of a semiconductor pellet, which solves the problems of the prior art and allows the appearance of a semiconductor pellet to be inspected more accurately and more practically than the conventional method. The goal is to provide the following.
[発明の概要]
この発明による方法は被検査対象の半導体ベレットの外
観像を濃淡値として検出して画f@!Pを得る一方、予
め求めておいた良品の半導体ベレットの画像Rと前記画
像Pとの差の絶対値I P−R1に相当する欠陥画像E
、を作った後、この欠陥画像E、を二値画像E2に変換
し、該二値画像E2をラベリングすることにより該被検
査対象の半導体ベレットの外観不良を検出することを特
徴とするものである。[Summary of the Invention] The method according to the present invention detects the external appearance image of a semiconductor pellet to be inspected as gray scale values, and obtains an image f@! While obtaining P, the absolute value of the difference between the image R of a good semiconductor pellet obtained in advance and the image P is defective image E corresponding to P-R1.
, and then converting this defect image E into a binary image E2, and labeling the binary image E2 to detect defects in appearance of the semiconductor pellet to be inspected. be.
本発明の方法においては、従来方法とは異なって濃淡画
像を用いているので二値画像を用いるよりも情報量が多
くなり、高精度の検出を行うことができる。Unlike the conventional method, the method of the present invention uses a grayscale image, so the amount of information is larger than when using a binary image, and highly accurate detection can be performed.
なお、本発明方法の実施には本出願人が提案したパター
ン検出装置(特開昭57−137978号公報参照)を
使用することができる。 すなわち、前記画像PとRと
の位置合せを行う場合には、相関係数を用いたパターン
検出方法によって位置合せをした後、PとRとの差の絶
対値に等しい欠陥の画像からラベリングを行うことによ
り半導体ベレットの外観検査を行う。Note that a pattern detection device proposed by the present applicant (see Japanese Patent Application Laid-open No. 137978/1983) can be used to carry out the method of the present invention. That is, when aligning the images P and R, after alignment is performed by a pattern detection method using a correlation coefficient, labeling is performed from an image of a defect equal to the absolute value of the difference between P and R. By doing this, the appearance of the semiconductor pellet is inspected.
[発明の実施例] 以下に図面を参照して本発明の詳細な説明する。[Embodiments of the invention] The present invention will be described in detail below with reference to the drawings.
本発明の方法では、多数の半導体ベレットの外観像を光
学的に検出して光電変換するとともにそれをディジタル
信号に変換して第1図(a )及び第2図の如き画像S
を得た後、この画像Sの中から半導体ベレット 1個分
の画像Pを第2図に示すデータ切出し回路1によって切
り出し、これを相関係数計算回路2に入力する一方、第
1図(b )及び第2図に示すように良品の半導体ベレ
ットに関する基準画像Rが格納されている基準画像格納
回路3から基準画像Rを取り出して相関係数計算回路2
に入力させ、両者間の相関係数fを算出し、この相関係
数fを判定回路4に入れて画像S内の画像Pの位置を検
出する。(なお、ここまでの工程については特開昭57
−137978号公報に開示されているパターン検出装
置によって行う。)次に、第1図(C)に示寸ように画
像Pと基準画像Rとの差の絶対値I P−Rlに等しい
欠陥画像E、を作る。 この場合、欠陥画像E、の平均
値をE IA、最大値をE−(&tも明るい点の値)、
最小値(最も暗い点の値)をEl、1.nとし、スレッ
ショールドレベルSLを
5L=Eu+α(E n’m −E min )なる式
で計算しく但し、αは定数)だ後、この値で第1図(d
)に示すように二値画像E2を作る。In the method of the present invention, external images of a large number of semiconductor pellets are optically detected, photoelectrically converted, and converted into digital signals to generate images S as shown in FIGS. 1(a) and 2.
After obtaining the data, an image P for one semiconductor pellet is extracted from this image S by the data extraction circuit 1 shown in FIG. ) and the correlation coefficient calculation circuit 2 extracts the reference image R from the reference image storage circuit 3 in which the reference image R regarding a non-defective semiconductor pellet is stored as shown in FIG.
, the correlation coefficient f between the two is calculated, and this correlation coefficient f is input into the determination circuit 4 to detect the position of the image P within the image S. (Please note that the process up to this point was published in Japanese Unexamined Patent Publication No. 57
The pattern detection device disclosed in Japanese Patent No. 137978 is used. ) Next, a defective image E, whose size is equal to the absolute value of the difference between the image P and the reference image R, I P - Rl, is created as shown in FIG. 1(C). In this case, the average value of the defect image E is EIA, the maximum value is E-(&t is also the value of the bright point),
The minimum value (value of the darkest point) is El, 1. n, and the threshold level SL is calculated using the formula 5L=Eu+α(E n'm −E min ), where α is a constant).
) A binary image E2 is created as shown in FIG.
そして、この二値画像E2をラベリング(分類)するこ
とにより、第1図(e )に示す欠陥分類像ELを得、
この欠陥分類像ELによって欠陥の大きさく面積)や形
状(幅、長さ等)や位置を計算して半導体ベレットの外
観検査を行う。 前記ラベリングは、たとえば、二値画
像の上左端より横方向に列数X、該端より縦方向に行数
yの座標P (X、V )を、これに隣接する4つの画
素A。Then, by labeling (classifying) this binary image E2, a defect classification image EL shown in FIG. 1(e) is obtained,
Using this defect classification image EL, the size, area, shape (width, length, etc.), and position of the defect are calculated and the appearance of the semiconductor pellet is inspected. The labeling is performed, for example, by assigning coordinates P (X, V ) of the number of columns X in the horizontal direction from the upper left edge of the binary image and the number of rows y in the vertical direction from the upper left edge to four pixels A adjacent thereto.
(x−1,y ) 、A2 (x−1,y−1) 、
At (x、y−1)及びA4(X −ト1 、 y
−1)の情報を用いて分類する。(x-1, y), A2 (x-1, y-1),
At (x, y-1) and A4(X-t1, y
-Classify using the information in 1).
[発明の効果J
航記実施例において説明した本発明の方法では次のよう
な効果を奏することができる。[Effects of the Invention J Navigation The method of the present invention explained in the embodiments can produce the following effects.
(a)iI!淡画像画像いるので従来方法では正確に検
出できなかったばい汚れなども検出することができると
ともに微小なパターンくずれ等も検出することができる
。(a)iI! Since the light image is used, it is possible to detect dust and dirt that could not be detected accurately using conventional methods, and also to detect minute pattern distortions.
(b ) パターン位置検出と外観検査とに用いるパ
ターンが同一画像であるため、基準パターン用のメモリ
を節約できる。(b) Since the pattern used for pattern position detection and appearance inspection is the same image, memory for the reference pattern can be saved.
(C) 照明用光源の光度(半導体ベレット上の照度
)がある程度ドリフトしても、本発明方法では自動的に
スレッショールドレベルSLを計算するので常に精度の
よい画像が得られる。(C) Even if the luminous intensity of the illumination light source (illuminance on the semiconductor pellet) drifts to some extent, the method of the present invention automatically calculates the threshold level SL, so that highly accurate images can always be obtained.
(d ) 検査装置の半導体ベレット位置決め装置(
たとえばXYテーブル等)に精度不良やガタがあっても
パターン位置を精密に検出できるので不良品判定を誤る
ことがない。(d) Semiconductor pellet positioning device of inspection equipment (
Even if there is poor accuracy or play in the XY table (for example, an XY table), the pattern position can be detected precisely, so there will be no error in determining defective products.
(e ) 複数個の半導体ペレットを検査することが
できるので外観検査を高速化することができる。(e) Since a plurality of semiconductor pellets can be inspected, the appearance inspection can be speeded up.
第1図は本発明の方法の原理を説明するための図、第2
図は本発明方法の一部の実施に使用されるパターン検査
装置の原理と概略構成を示した図である。
1・・・データ切出し回路、 2・・・相関係数計算回
路、 3・・・基準画像格納回路、 4・・・判定回路
。Figure 1 is a diagram for explaining the principle of the method of the present invention, Figure 2 is a diagram for explaining the principle of the method of the present invention.
The figure is a diagram showing the principle and schematic configuration of a pattern inspection device used to implement a part of the method of the present invention. DESCRIPTION OF SYMBOLS 1... Data extraction circuit, 2... Correlation coefficient calculation circuit, 3... Reference image storage circuit, 4... Judgment circuit.
Claims (1)
出するとともにアナログ電気信号に変換した後、更にデ
ィジタル信号に変換して前記被検査対象の半導体ペレッ
トに関する画像Pを得る一方、良品の半導体ペレットに
関する画像Rと前記画像Pとの差の絶対値に相当する画
像E_1を作成し、この画像E_1を二値画像E_2に
変換した後、画像E_2をラベリングすることにより前
記被検査対象の半導体ペレットにおける欠陥の形状及び
大きさ並びに位置などを検出することを特徴とする半導
体ペレットの外観検査方法。1 After optically detecting the appearance image of the semiconductor pellet to be inspected and converting it into an analog electrical signal, further converting it into a digital signal to obtain an image P regarding the semiconductor pellet to be inspected, while detecting a non-defective semiconductor pellet. After creating an image E_1 corresponding to the absolute value of the difference between the image R and the image P, converting this image E_1 into a binary image E_2, and labeling the image E_2, A semiconductor pellet appearance inspection method characterized by detecting the shape, size, position, etc. of defects.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60252944A JPS62113436A (en) | 1985-11-13 | 1985-11-13 | External appearance inspection method for semiconductor pellet |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60252944A JPS62113436A (en) | 1985-11-13 | 1985-11-13 | External appearance inspection method for semiconductor pellet |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62113436A true JPS62113436A (en) | 1987-05-25 |
Family
ID=17244329
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60252944A Pending JPS62113436A (en) | 1985-11-13 | 1985-11-13 | External appearance inspection method for semiconductor pellet |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62113436A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0333605A (en) * | 1989-06-30 | 1991-02-13 | Hitachi Ltd | Comparing/testing method of patterns and apparatus thereof |
JPH05172542A (en) * | 1991-12-24 | 1993-07-09 | Kao Corp | Printing-pattern inspecting apparatus |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50127574A (en) * | 1974-03-27 | 1975-10-07 | ||
JPS5860538A (en) * | 1981-10-06 | 1983-04-11 | Fujitsu Ltd | Inspecting method for rattern |
JPS59192944A (en) * | 1983-04-15 | 1984-11-01 | Hitachi Ltd | Classifying method of pattern defect |
-
1985
- 1985-11-13 JP JP60252944A patent/JPS62113436A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50127574A (en) * | 1974-03-27 | 1975-10-07 | ||
JPS5860538A (en) * | 1981-10-06 | 1983-04-11 | Fujitsu Ltd | Inspecting method for rattern |
JPS59192944A (en) * | 1983-04-15 | 1984-11-01 | Hitachi Ltd | Classifying method of pattern defect |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0333605A (en) * | 1989-06-30 | 1991-02-13 | Hitachi Ltd | Comparing/testing method of patterns and apparatus thereof |
JPH05172542A (en) * | 1991-12-24 | 1993-07-09 | Kao Corp | Printing-pattern inspecting apparatus |
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