JPS6211303A - Yig thin film microwave device - Google Patents
Yig thin film microwave deviceInfo
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- JPS6211303A JPS6211303A JP60150431A JP15043185A JPS6211303A JP S6211303 A JPS6211303 A JP S6211303A JP 60150431 A JP60150431 A JP 60150431A JP 15043185 A JP15043185 A JP 15043185A JP S6211303 A JPS6211303 A JP S6211303A
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- yig
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- thin film
- frequency
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Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、ＹＩＧ （イツトリウム・鉄・ガーネット）
ＷｉＩｉｌのフェリ磁性共鳴を用いたマイクロ波素子に
直流バイアス磁界を印加する手段を具備するＹＩＧ薄膜
マイクロ波装置に係わる。[Detailed description of the invention] [Industrial application field] The present invention is directed to YIG (yttrium, iron, garnet).
The present invention relates to a YIG thin film microwave device equipped with means for applying a DC bias magnetic field to a microwave element using WiIil ferrimagnetic resonance.
本発明はＹＩＧｉ膜のフェリ磁性共鳴を用いたマイクロ
波素子に直流バイアス磁界を印加する磁気回路に特定の
磁気特性を有する永久磁石を用いるものであり、これに
より、温度特性の良好なＹ！Ｇ薄膜マイクロ波装置を構
成する。The present invention uses a permanent magnet having specific magnetic properties in a magnetic circuit that applies a DC bias magnetic field to a microwave element using ferrimagnetic resonance of a YIGi film. Construct a G thin film microwave device.
マイクロ波装置として、Ｃ，ＧＧ （ガドリニウム・ガ
リウム・ガーネット）非磁性基板上に、フェリ磁性体で
あるＹＩＧ（イツトリウム・鉄・ガーネット）薄膜を液
相エピタキシャル成長（以下ＬＰＥという）させたＹＩ
ＧｌｌＱをフォトリソグラフィ、−技術による選択的エ
ツチングによって円形成いは矩形等の所要形状に加工し
、これのフェリ磁性共鳴を利用することによってフィル
タ、オシレータ等のマイクロ波装置を構成するものが提
案されている。これらマイクロ波装置は、マイクロスト
リップライン等を伝送線路としてマイクロ波集積回路を
作製することが可能であり、他のマイクロ波集積回路と
ハイブリッド接続を容易に行なうことができるという利
点がある。As a microwave device, a YI film is produced by liquid phase epitaxial growth (hereinafter referred to as LPE) of a ferrimagnetic YIG (yttrium iron garnet) thin film on a C, GG (gadolinium gallium garnet) nonmagnetic substrate.
It has been proposed that microwave devices such as filters and oscillators can be constructed by processing GllQ into a desired shape such as a circle or a rectangle by selective etching using photolithography and technology, and by utilizing the ferrimagnetic resonance of this. ing. These microwave devices have the advantage that a microwave integrated circuit can be fabricated using a microstrip line or the like as a transmission line, and that hybrid connections with other microwave integrated circuits can be easily performed.
また、ＹＩＧ薄膜磁気共鳴によるマイクロ波素子は、上
述したようにＬＰＥとリソグラフィー技術によって作製
することができることから量産性にすぐれている。Moreover, the microwave device based on YIG thin film magnetic resonance can be manufactured by LPE and lithography techniques as described above, and therefore has excellent mass productivity.
このようにＹＩＧ薄膜磁気共鳴素子によるマイクロ波装
置は、従前のＹＩＧ球を用いたものに比し、実用上の多
くの利点を有する。As described above, a microwave device using a YIG thin film magnetic resonance element has many practical advantages over a conventional device using a YIG sphere.
ところが、このようなＹＩＧ薄膜のフェリ磁性共鳴を利
用したマイクロ波装置は、ＹＩＧ薄膜のフェリ磁性共鳴
周波数ｆの温度Ｔの依存性が大であることから温度特性
が悪いという実用上に大きな問題点がある。However, such a microwave device that utilizes the ferrimagnetic resonance of a YIG thin film has a major practical problem in that the temperature characteristics are poor because the ferrimagnetic resonance frequency f of the YIG thin film is highly dependent on the temperature T. There is.
以下、これについて説明する。This will be explained below.
ＹＩＧＭ膜のフェリ磁性共鳴周波数ｆは、異方性磁界の
寄与が小さいとしてこれを無視すると、キラチル（にｉ
Ｌ ｔｅ ｌ）の式を用いて、次式（１）のように表
すことができる。The ferrimagnetic resonance frequency f of the YIGM film is calculated by ignoring the anisotropic magnetic field as its contribution is small.
It can be expressed as the following equation (1) using the equation L te l).
ｆ（ＩＪ）−γ （Ｈｇ（ｆｌ Ｎ Ｘ ４πＭｓＹ
（Ｔ））・・・（１）但し、Ｔは磁気回転比でγ−２，
８ＭＨｚ／ Ｏｅ、、Ｈｇは直流バイアス磁界、Ｎ ２
ＹはＹＩＧ薄膜の反磁界係数で静磁モード理論を用いて
計算される値、４πＭ ＳＹはＹＩＧの飽和磁化である
。ｒ、ｔｉｇ。f(IJ)-γ (Hg(fl N X 4πMsY
(T))...(1) However, T is the gyromagnetic ratio γ-2,
8MHz/Oe, Hg is DC bias magnetic field, N2
Y is the demagnetizing field coefficient of the YIG thin film, a value calculated using magnetostatic mode theory, and 4πM SY is the saturation magnetization of YIG. r, tig.
４πＭ、Ｙは全て温度Ｔの関数となる。具体例としては
、アスペクト比（厚み／直径）が、０．０１のＹＩＧ円
板の垂直共鳴では、Ｎ−１−０，９７７４であり、仮に
バイアス磁界Ｈｇが温度によらず一定とした場合、４ｒ
ｃＭＢＹは、−２０℃で１９１６Ｇ （ガウス）、＋６
０℃では、１６２２Ｇとなるから共鳴周波数ｆはこの温
度範囲で、８２３ＭＨｚもの変化をする。4πM and Y are all functions of temperature T. As a specific example, in the vertical resonance of a YIG disk with an aspect ratio (thickness/diameter) of 0.01, it is N-1-0,9774, and if the bias magnetic field Hg is constant regardless of temperature, 4r
cMBY is 1916G (Gauss) at -20℃, +6
At 0° C., it is 1622G, so the resonance frequency f changes by as much as 823MHz in this temperature range.
このようなＹＩＧｗｔｌｆｉ！マイクロ波装置においζ
、外囲温度による共鳴周波数の変動を回避する方法とし
ては、ＹＩＧ薄膜磁気共鳴素子を恒温槽内に配置して素
子自体を一定の温度に保持するとか電磁石によって温度
に依存して磁界を変化させて素子の共鳴周波数を一定に
保持させるなどの方法が考えられるが、これらは、電流
制御など外部からのエネルギー供給を必要とすることか
らその構成は複雑となる。YIGwtlfi like this! Microwave equipment odor ζ
Methods to avoid fluctuations in resonance frequency due to ambient temperature include placing the YIG thin film magnetic resonance element in a thermostatic oven to maintain the element itself at a constant temperature, or using an electromagnet to change the magnetic field depending on the temperature. One possible method is to keep the resonance frequency of the element constant, but these methods require external energy supply such as current control, making their configurations complicated.
本発明は上述した問題点が解消された、すなわち、温度
特性を補償するための外部回路を必要とせず、更にこれ
に伴って温度特性を補償するための電力消背がなく、し
かも固定周波数、可変周波数の両方のＹＩＧ薄膜マイク
ロ波装置に適用できて、広範囲の使用周波数のＹＩＧ薄
膜マイクロ波装置において温度特性の補償を良好に行な
うことができるようにするものである。The present invention solves the above-mentioned problems, that is, there is no need for an external circuit to compensate for temperature characteristics, there is no need for power consumption to compensate for temperature characteristics, and there is a fixed frequency. The present invention is applicable to both YIG thin film microwave devices with variable frequencies, and enables good compensation of temperature characteristics in YIG thin film microwave devices with a wide range of operating frequencies.
第１図はＹＩＧ薄腰マイクロ波装置の構成図で、図中＋
１）はＹＩＧ″／Ｗ、膜によるマイクロ波素子、（２）
はこのマイクロ波素子（１）にバイアス磁界を与える磁
気回路で、この磁気回路（２）は、例えばコ字状ヨーク
（３）とその両端部の相対向する面に、夫々厚さ１ｍの
永久磁石（４）が配置され、両磁石（４）及び（４）間
に間隔Ｉ！ｇをもって磁気ギャップｇが形成され、この
磁気ギヤツブｇ内にマイクロ波素子＋１）が配置される
。Figure 1 is a configuration diagram of the YIG thin microwave device.
1) is YIG''/W, a microwave element using a film, (2)
is a magnetic circuit that applies a bias magnetic field to this microwave element (1), and this magnetic circuit (2) is made of, for example, a permanent 1 m thick plate on each of the opposing surfaces of the U-shaped yoke (3) and its opposite ends. A magnet (4) is arranged with a spacing I! between both magnets (4) and (4). A magnetic gap g is formed with g, and a microwave element +1) is disposed within this magnetic gear g.
本発明においては、この磁気回路（２）中の磁石（４）
として、ｆｏを使用周波数、γを磁気回転比、Ｎ ｚＹ
をＹＩＧ薄膜の反磁界係数、４πＭｓざを室温における
ＹＩＧの飽和磁化α１Ｙを室温付近におけるＹＩＧの飽
和磁化の１次の温度係数とするとき、室温でのレマネン
スＢｒが（ｆ ｏ ／ ｒ）＋ Ｎ２Ｙ４ ｒｃＭＢざ
以上で、且つ室温付近でのＢｒの１次の温度係数内に入
るような永久磁石とする。In the present invention, the magnet (4) in this magnetic circuit (2)
, fo is the frequency used, γ is the gyromagnetic ratio, N zY
When is the demagnetizing field coefficient of the YIG thin film and 4πMs is the saturation magnetization of YIG at room temperature α1Y is the first-order temperature coefficient of the saturation magnetization of YIG near room temperature, the remanence Br at room temperature is (f o / r) + N2Y4 A permanent magnet is used that has an rcMB or more and is within the first-order temperature coefficient of Br near room temperature.
尚、ここに使用周波数ｆＯとは、マイクロ波装置の使用
周波数が固定である場合は、その周波数を指称し、可変
とするときは、固定のバイアス磁界に重畳して磁気回路
に図示しζいないが電磁コイルへの通電制御によってバ
イアス磁界が可変されるようになされているが、この電
磁コイルへの通電電流をオフとしたときの周波数を指称
する。In addition, the working frequency fO here refers to the frequency when the working frequency of the microwave device is fixed, and when it is variable, it is superimposed on the fixed bias magnetic field and indicated in the magnetic circuit. Although the bias magnetic field is varied by controlling the current flowing through the electromagnetic coil, it refers to the frequency when the current flowing through the electromagnetic coil is turned off.
第１図に示す磁気回路において、磁束はすべて磁気ギヤ
ツブｇ内を通り、このギヤツブｇ内の磁界は一様であり
、またヨークの透磁率が無限大であるとすると、マック
スウェルの方程式により次式が成り立つ。In the magnetic circuit shown in Figure 1, all of the magnetic flux passes through the magnetic gear g, the magnetic field within the gear g is uniform, and the magnetic permeability of the yoke is infinite. According to Maxwell's equations, The formula holds true.
Ｂｎ＋ ＝Ｂｇ ・・・（２）
１ｍＨｍ＝１ｇＨｇ ・・・（３）但し、
Ｂｍ及び９ｇは、夫々永久磁石（４）及び磁気ギャップ
内の磁束密度、Ｈａ及びＨ，は、夫々同様に永久磁石（
４）及び磁気ギヤツブｇ内の磁界で、Ｈａはその向きが
Ｈｇ 、Ｂｍ、Ｂｇの向きと逆となる。Bn+ =Bg...(2)
1mHm=1gHg...(3) However,
Bm and 9g are the magnetic flux densities in the permanent magnet (4) and the magnetic gap, respectively, and Ha and H are the magnetic flux densities in the permanent magnet (4), respectively.
4) and the magnetic field within the magnetic gear g, the direction of Ha is opposite to that of Hg, Bm, and Bg.
更に、永久磁石（４ンがクリック点を持たないものであ
って、リコイル透磁率μｒが一定、つまり減磁特性が直
接性を示すものと仮定すると、次式（４）が成立する。Furthermore, assuming that the permanent magnet (4) does not have a click point and that the recoil permeability μr is constant, that is, that the demagnetization characteristic exhibits directness, the following equation (4) holds true.
μｒ μｒ・ ・ ・
（４）
（３］式、及び（４）式よりギャップ磁界Ｈｇが次式（
５）のように求められる。μr μr・・・・
(4) From equations (3) and (4), the gap magnetic field Hg can be calculated using the following equation (
5).
今、熱膨張による磁気回路の寸法変化の寄与は、充分小
さく無視できると仮定すると、ギャップ磁界Ｈｇは、温
度Ｔの関数として次式（６）のように表わすことができ
る。Assuming that the contribution of dimensional changes in the magnetic circuit due to thermal expansion is sufficiently small and can be ignored, the gap magnetic field Hg can be expressed as a function of temperature T as shown in the following equation (6).
一方、永久磁石のレマネンスＢｒ及びＹＩＧの飽和磁化
４πＭｓＹは、室温Ｔｏを中心として士数十℃の温度範
囲で、具体滴には±４０℃の温度範囲では、夫々２次ま
での温度係数α１’＋ α２Ｂ及びα１Ｙ＋α２Ｙを
考慮すれば、充分精度良く表現することがｒｊＪ能であ
る。On the other hand, the remanence Br of the permanent magnet and the saturation magnetization 4πMsY of YIG have a temperature coefficient α1' up to the second order in a temperature range of several tens of degrees Celsius centering on the room temperature To, and in a temperature range of ±40 degrees Celsius for a concrete droplet. +α2B and α1Y+α2Y, it is possible to express it with sufficient accuracy.
Ｂｒω−Ｂｒ０（１＋α１” （Ｔ−Ｔｏ ）＋α２’
（Ｔ−Ｔｏ ）’） ・・・（７１４ｇＭＳ
Ｙ（Ｔ）−４ｇＭｓＪ（１＋α１Ｙ（Ｔ−Ｔｏ）＋α２
Ｙ（Ｔ−Ｔｏ ）’） ・・・（８）そし°
ζ、共鳴周波数ｒ■が温度Ｔに依存せず、一定の値ｆ０
になるためには、（１）式と（６）式とにより次式（９
）が成立する必要がある。Brω-Br0(1+α1"(T-To)+α2'
(T-To)') ... (714gMS
Y(T)-4gMsJ(1+α1Y(T-To)+α2
Y(T-To)')...(8) Then°
ζ, the resonance frequency r■ does not depend on the temperature T and is a constant value f0
In order to obtain the following equation (9) using equations (1) and (6),
) must hold true.
・・・（９）
この（９）式に（７）弐及び（８）式を代入し、温度Ｔ
につイテの０次、１次及び２次の各項を等しいとするご
とにより次式が求められる。...(9) Substituting equations (7) 2 and (8) into this equation (9), the temperature T
The following equation is obtained by assuming that the 0th, 1st, and 2nd order terms of the unit are equal.
・・・ （１０）
・・・ （１１）
・・・ （１２）
（１０）式から
ＢｙＯ＞ （ｆ ｏ ／ ｒ ） ＋ＮＺ’ ４ｇＭＳ
ざ −・−（１３）の条件が必要であることが分る。... (10) ... (11) ... (12) From equation (10), ByO> (f o / r ) +NZ' 4gMS
It turns out that the condition -・-(13) is necessary.
また、（１１）式、及び（１２）式をみると、永久磁石
（４）のレマネンスＢｒの１次及び２次の温度係数α１
’ ＋α２Ｂのｗｔ通値は、共鳴周波数ｆｏ、ＹＩＧ薄
膜の反磁界係数ＮＺＹ、ＹＩＧの飽和磁化４πＭｓざ及
びその温度係数α１Ｙだけから求められることが分る。Also, looking at equations (11) and (12), the first and second temperature coefficients α1 of the remanence Br of the permanent magnet (4)
It can be seen that the wt normal value of +α2B can be obtained only from the resonance frequency fo, the demagnetizing field coefficient NZY of the YIG thin film, the YIG saturation magnetization 4πMs distribution, and its temperature coefficient α1Y.
具体例としてアスペクト比が、０．ＯｌのＹＩＧ円板の
垂直共鳴では、Ｎ２Ｙ−０，９７７４であり、Ｔ。As a specific example, the aspect ratio is 0. In the vertical resonance of the YIG disk of Ol, it is N2Y-0,9774 and T.
−２０℃（室温）でのＹＩＧの飽和磁化及びその温度係
数は、４ｇＭＳざ＝１７７１．８Ｇ、 α１Ｙ−２，
０７Ｘ１０−’ 、α２Ｙ＝ −０，９９６Ｘ １０−
’となるので、これらからレマネンスＢｒの１次及び２
次の温度係数αＩＢ及びα２Ｂを（１１）式及び（１２
）式から計算して求めると、第２図の表に示す通りにな
る。The saturation magnetization of YIG at -20°C (room temperature) and its temperature coefficient are 4gMS = 1771.8G, α1Y-2,
07X10-', α2Y= -0,996X 10-
', so from these, the first and second order of remanence Br
The following temperature coefficients αIB and α2B are expressed by equations (11) and (12).
), the results are as shown in the table in Figure 2.
しかしながら現実の問題として、ＹＩＧ薄膜マイクロ波
装置の使用周波数ｆｏが決められたとき、上述したよう
に、（１１）弐及び（１２）式から求められるα−及び
α２Ｂの値を同時に実現できる永久磁石材料を用意する
ことは容易ではない。しかしながら、第２図において２
次の温度係数α２Ｂをみると、これについては、ｆｏの
比較的小さい変化に対しては、αＬＢに比してその変化
が小さいことから一次の温度係数αＩＩ′１だけについ
てみると、このαＩＢの（１１）式から決る理想値（α
ＩＢ）ｏとしたとき、この値（αＩＢ）ｏから±５％の
値のαｌｓを得る永久磁石材料を用意することは、それ
ほど困難ではない。そして、このときの永久磁石のレマ
ネンスＢｒ及び室温におけるＹＩＧの飽和磁化の１次の
温度係数の寄与だけから決る周波数変化Δｆは、
・・・ （１４）
となる。However, as a practical matter, when the operating frequency fo of the YIG thin film microwave device is determined, as mentioned above, a permanent magnet that can simultaneously realize the values of α- and α2B obtained from equations (11) 2 and (12) Preparing the materials is not easy. However, in Figure 2, 2
Looking at the next temperature coefficient α2B, for a relatively small change in fo, the change is small compared to αLB, so if we look only at the first-order temperature coefficient αII′1, this αIB The ideal value (α
IB)o, it is not so difficult to prepare a permanent magnet material that obtains a value αls of ±5% from this value (αIB)o. Then, the frequency change Δf determined only from the contribution of the remanence Br of the permanent magnet and the first-order temperature coefficient of the saturation magnetization of YIG at room temperature is as follows: (14)
この（１４）式から通常要求される温度変化ΔＴ＝±４
０℃において、ΔαＩＢ／（αＩＢ）０−±５％とした
ときのΔｆを求めるとΔｆ＝±２０ＭＩＩｚに収まる。From this equation (14), the normally required temperature change ΔT = ±4
At 0° C., when Δf is set to ΔαIB/(αIB)0−±5%, Δf is found to be Δf=±20MIIz.
つまり、良好な温度特性が実現できることが確かめられ
る。In other words, it is confirmed that good temperature characteristics can be achieved.
第１図の構成において、ｆｏ＝６ＧＨｚのＹＩＧ薄膜マ
イクロ波装置を得る場合について説明する。A case will be described in which a YIG thin film microwave device with fo=6 GHz is obtained using the configuration shown in FIG.
この場合、永久磁石（４）としてそのレマネンスＢｒが
６０００Ｇ、 １次の温度係数αＩＢが−０，９Ｘ １
０−３、α２ＢがＯのＣｅＣｏ５の磁石を用いる。In this case, the permanent magnet (4) has a remanence Br of 6000G and a first-order temperature coefficient αIB of -0.9X 1
0-3, a CeCo5 magnet with α2B of O is used.
このとき、２次の温度係数までを考慮しても、−２０℃
〜＋６０℃の温度変化の範囲でΔｆ＝±１１．５ＭＨｚ
の良好な温度特性を実現することができる。At this time, even if we consider the second-order temperature coefficient, -20℃
Δf=±11.5MHz within a temperature change range of ~+60℃
Good temperature characteristics can be achieved.
次に、本発明を周波数可変型のＹＩＧ薄膜マイクロ波装
置に通用する場合について説明する。第３図は、その−
例を示し、第１図と対応する部分には同一符号を付して
重複説明を省略するが、この場合、ヨーク（３）にＮｉ
回数のコイル（５）を巻回した場合である。Next, a case will be described in which the present invention is applied to a variable frequency YIG thin film microwave device. Figure 3 shows the -
An example will be shown, and parts corresponding to those in FIG.
This is a case where the coil (5) is wound several times.
この場合、前記（３）式に対応する式として次の（１５
）式が成立する。In this case, the following equation (15
) holds true.
１ｔａＨ慣＋ＮＩ＝βｇＨｇ ・・・ （１５）
但し、■はコイル電流である。1taH habit+NI=βgHg... (15)
However, ■ is the coil current.
また、前記（６）式に対応する式として次の（１６）式
が成立する。Furthermore, the following equation (16) holds true as an equation corresponding to the above equation (6).
そして、第１図の場合と同じように、（９）式を満たす
ように、永久磁石（４）の材料と厚さを選定すれば（１
６）式から、次式（１７）が成立する。Then, as in the case of Fig. 1, if the material and thickness of the permanent magnet (4) are selected so as to satisfy equation (9), then (1
From equation 6), the following equation (17) holds true.
Ｈｇ （Ｔ）＝ （ｆ ｏ ／γ）＋Ｎ２Ｙ４πＭ ｓ
Ｘ ｅｆ）（１）式及び（１７）式から共鳴周波数ｆは
、次式（１８）のように、温度に依存せず、コイル電流
Ｉたけで決ることが分る。Hg (T) = (f o /γ) + N2Y4πM s
X ef) From equations (1) and (17), it can be seen that the resonance frequency f does not depend on the temperature and is determined only by the coil current I, as shown in the following equation (18).
すなわち、中心の周波数を上述したように永久磁石（４
）の特性によって本発明による構成によってその温度補
償をなせば、コイル（５）への通電による発熱による影
響が大きくないとすれば、可変型のＹＩＧ薄膜マイクロ
波装置においても有効であることが分る。In other words, the center frequency is set by a permanent magnet (4
), it has been found that if temperature compensation is achieved by the configuration according to the present invention, it is effective even in a variable YIG thin film microwave device, provided that the effect of heat generation due to energization to the coil (5) is not large. Ru.
上述したように本発明によれば、第１図にボしたように
ＹＩＧ薄膜による磁気共鳴を利用するマイクロ波素子（
１１に対してバイアス磁界を与えるための磁気回路中に
、室温でのレマネンスＢｒが（ｆｏ ／γ）＋ＮＺＹ４
πＭｓざ以上で、且つ室温付近でのＢｒの１次の温度係
数か
に入るような１種類の永久磁石材料を用いることによっ
て良好な温度特性を有するマイクロ波装置が実現できる
。As described above, according to the present invention, a microwave element (
In the magnetic circuit for applying a bias magnetic field to 11, remanence Br at room temperature is (fo/γ)+NZY4
A microwave device with good temperature characteristics can be realized by using one type of permanent magnet material that has a temperature coefficient of πMs or more and that is within the first-order temperature coefficient of Br near room temperature.
したがって冒頭に述べたように量産性にすぐれたＹ Ｉ
０Ｍ膜によるマイクロ波装置の特徴を活かして、より
その利用度が高められその工業的利益は大である。Therefore, as mentioned at the beginning, YI with excellent mass productivity
By taking advantage of the characteristics of the microwave device using the 0M membrane, its usage can be further increased, and its industrial benefits are great.
第１図及び第３図は夫々本発明によるＹｆＧ薄膜マイク
ロ波装置の各側の構成図、第２図はその使用周波数と温
度係数α１’＋ α２Ｂの計箆値表図である。
（１１はマイクロ波素子、（２）は磁気回路、ｇはその
磁気ギャップ、（３）はヨーク、（４）は永久磁石、（
５）はコイルである。
−２（：
■パ 。
代理人 伊藤 貞 １．仁１，２．′
同 松隈秀盛、３Ｊｌ！ ＋さ
ＹＩＧ膚ｊ潰マイクロ壕３１！の構成肥第１図
第２図FIGS. 1 and 3 are block diagrams of each side of the YfG thin film microwave device according to the present invention, and FIG. 2 is a table showing the used frequencies and temperature coefficients α1'+α2B. (11 is a microwave element, (2) is a magnetic circuit, g is its magnetic gap, (3) is a yoke, (4) is a permanent magnet, (
5) is a coil. -2 (: ■Pa. Agent: Sada Ito 1. Hitoshi 1, 2.' Same as Hidemori Matsukuma, 3Jl! +Sa YIG skin j crushing micro trench 31! Composition of Fig. 1 Fig. 2
Claims (1)
子にバイアス磁界を与える磁気回路中に、ｆ＿０を使用
周波数（固定周波数ではその周波数、可変周波数装置で
は周波数制御用の電磁石コイルに電流を通じない状態で
の周波数）、γを磁気回転比、Ｎ＿Ｚ＾ＹをＹＩＧ薄膜
の反磁界係数、４πＭ＿ｓ＿ｏ＾Ｙを室温におけるＹＩ
Ｇの飽和磁化α＿１＾Ｙを室温付近におけるＹＩＧの飽
和磁化の１次温度係数とするとき、室温でのレマネンス
Ｂｒが（ｆ＿０／γ）＋Ｎ＿Ｚ＾Ｙ４πＭ＿ｓ＿ｏ＾Ｙ
以上で、且つ室温付近でのＢｒの１次の温度係数が｛（
Ｎ＿Ｚ＾Ｙ４πＭ＿ｓ＿ｏ＾Ｙ）／［（ｆ＿０／γ）＋
Ｎ＿Ｚ＾Ｙ４πＭ＿ｓ＿ｏ＾Ｙ］｝・α＿１＾Ｙの±５
％以内に入るような永久磁石が用いられて成るＹＩＧ薄
膜マイクロ波装置。In a magnetic circuit that applies a bias magnetic field to a microwave element that utilizes the ferrimagnetic resonance of a YIG thin film, f_0 is the frequency used (for a fixed frequency, that frequency; for a variable frequency device, it is the frequency when no current is passed through the electromagnetic coil for frequency control). frequency), γ is the gyromagnetic ratio, N_Z^Y is the demagnetizing field coefficient of the YIG thin film, and 4πM_s_o^Y is the YI at room temperature.
When the saturation magnetization α_1^Y of G is the first-order temperature coefficient of the saturation magnetization of YIG near room temperature, the remanence Br at room temperature is (f_0/γ)+N_Z^Y4πM_s_o^Y
Above, the first-order temperature coefficient of Br near room temperature is {(
N_Z^Y4πM_s_o^Y)/[(f_0/γ)+
N_Z^Y4πM_s_o^Y]}・α_1^Y ±5
A YIG thin film microwave device using a permanent magnet that falls within %.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60150431A JPH0738528B2 (en) | 1985-07-09 | 1985-07-09 | YIG thin film microwave device |
| CA000513293A CA1266101A (en) | 1985-07-09 | 1986-07-08 | Yig thin film microwave apparatus |
| US06/883,605 US4745380A (en) | 1985-07-09 | 1986-07-09 | YIG thin film microwave apparatus |
| KR1019860005541A KR950005158B1 (en) | 1985-07-09 | 1986-07-09 | Yig thin film microwave device |
| DE8686305293T DE3687929T2 (en) | 1985-07-09 | 1986-07-09 | MICROWAVE DEVICE WITH THICK LAYERED YTTRIUM IRON GARNET. |
| EP86305293A EP0208547B1 (en) | 1985-07-09 | 1986-07-09 | Yig thin film microwave apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60150431A JPH0738528B2 (en) | 1985-07-09 | 1985-07-09 | YIG thin film microwave device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6211303A true JPS6211303A (en) | 1987-01-20 |
| JPH0738528B2 JPH0738528B2 (en) | 1995-04-26 |
Family
ID=15496775
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60150431A Expired - Fee Related JPH0738528B2 (en) | 1985-07-09 | 1985-07-09 | YIG thin film microwave device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0738528B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01191504A (en) * | 1988-01-27 | 1989-08-01 | Hitachi Metals Ltd | Microwave oscillator |
| JPH01191502A (en) * | 1988-01-27 | 1989-08-01 | Hitachi Metals Ltd | Magnetic device |
| JPH0224553A (en) * | 1988-07-13 | 1990-01-26 | Kanebo Ltd | Measuring apparatus of triboelectric voltage |
| US4977870A (en) * | 1989-02-17 | 1990-12-18 | Nissan Motor Co., Ltd. | Internal combustion engine |
| US6460503B2 (en) * | 2000-04-18 | 2002-10-08 | Yamaha Hatsudoki Kabushiki Kaisha | Oil pump layout structure for internal combustion engine |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3713210A (en) * | 1970-10-15 | 1973-01-30 | Westinghouse Electric Corp | Temperature stabilized composite yig filter process |
| JPS5570101A (en) * | 1978-11-22 | 1980-05-27 | Hitachi Metals Ltd | Microwave ferrite element |
-
1985
- 1985-07-09 JP JP60150431A patent/JPH0738528B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3713210A (en) * | 1970-10-15 | 1973-01-30 | Westinghouse Electric Corp | Temperature stabilized composite yig filter process |
| JPS5570101A (en) * | 1978-11-22 | 1980-05-27 | Hitachi Metals Ltd | Microwave ferrite element |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01191504A (en) * | 1988-01-27 | 1989-08-01 | Hitachi Metals Ltd | Microwave oscillator |
| JPH01191502A (en) * | 1988-01-27 | 1989-08-01 | Hitachi Metals Ltd | Magnetic device |
| JPH0224553A (en) * | 1988-07-13 | 1990-01-26 | Kanebo Ltd | Measuring apparatus of triboelectric voltage |
| US4983923A (en) * | 1988-07-13 | 1991-01-08 | Kanebo Ltd. | Frictional electrostatic voltage measuring equipment |
| US4977870A (en) * | 1989-02-17 | 1990-12-18 | Nissan Motor Co., Ltd. | Internal combustion engine |
| US6460503B2 (en) * | 2000-04-18 | 2002-10-08 | Yamaha Hatsudoki Kabushiki Kaisha | Oil pump layout structure for internal combustion engine |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0738528B2 (en) | 1995-04-26 |
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