JPS62107054A - Production of precise pattern - Google Patents

Production of precise pattern

Info

Publication number
JPS62107054A
JPS62107054A JP60246778A JP24677885A JPS62107054A JP S62107054 A JPS62107054 A JP S62107054A JP 60246778 A JP60246778 A JP 60246778A JP 24677885 A JP24677885 A JP 24677885A JP S62107054 A JPS62107054 A JP S62107054A
Authority
JP
Japan
Prior art keywords
film
pattern
plasma spraying
substrate
tungsten
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60246778A
Other languages
Japanese (ja)
Inventor
Kazuhiro Kimura
和博 木村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP60246778A priority Critical patent/JPS62107054A/en
Publication of JPS62107054A publication Critical patent/JPS62107054A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/01Selective coating, e.g. pattern coating, without pre-treatment of the material to be coated
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/14Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
    • H05K3/143Masks therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To obtain a precise pattern by forming a film having a prescribed pattern on a substrate, coating the film with a film forming material by plasma spraying and removing the film. CONSTITUTION:A fine pattern 4 of a photoresist is formed on a substrate 2, a layer of tungsten or the like is formed on the pattern 4 by plasma spraying and the photoresist is stripped. Since plasma spraying is carried out with a plasma jet at a high temp. and a high velocity, a coating of a high m.p. material can be formed and a dense structure is obtd. Thus, a precise and dense pattern of high quality can be efficiently formed with a high m.p. material such as tungsten.

Description

【発明の詳細な説明】 〈産業上の利用分野〉 本発明は精密機械部品及び電子部品に適用される精密パ
ターンの製造方法に関する。
DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a method for manufacturing precision patterns applied to precision mechanical parts and electronic parts.

く従来技術〉 近年、精密機械部品及び電子部品において精密なパター
ンが必要になり、その加工法としてフォトリソグラフィ
ーと呼ばれる、材料表面の非加工部分を耐薬品性の皮膜
で被覆し、不用の部分をエツチングすることによりパタ
ーン形成する方法や、7オト7オーミンクと呼ばれる、
ネガパターンの皮膜上に電気メッキや化学メッキ等の方
法で求める材料を析出させ、上記皮膜を除去することで
所定のパターン膜を得る方法が知られている。
In recent years, precise patterns have become necessary for precision mechanical parts and electronic parts, and the processing method for this is called photolithography, in which the unprocessed parts of the material surface are coated with a chemical-resistant film and the unnecessary parts are removed. There is a method of forming patterns by etching, and a method called 7-o-7-oh mink.
A method is known in which a desired pattern film is obtained by depositing a desired material on a film of a negative pattern by a method such as electroplating or chemical plating, and then removing the film.

〈発明が解決しようとする問題点〉 しかし、従来の7オトリソグラフイーの方法では、セラ
ミックや一部の金属類等の者しく耐食性が高く、電気化
学的あるいは化学的に腐食しにくい材料では、エツチン
グ速度が遅く、コストが高く、エツチング条件の管理や
エツチング液の処理が難しく、サイドエツチング等の影
響が避けられない等の問題があった。又、従来の7オト
7オーミングの方法では電析反応をほとんど示さない金
属類や、化学的にメッキが困難な金属類、セラミンク等
のパターン形成が困難であった。
<Problems to be Solved by the Invention> However, the conventional 7 otolithography method cannot be used with materials such as ceramics and some metals, which have high corrosion resistance and are difficult to corrode electrochemically or chemically. There are problems such as slow etching speed, high cost, difficulty in controlling etching conditions and treatment of etching solution, and unavoidable side etching effects. In addition, with the conventional 70 to 7 ohming method, it is difficult to form patterns on metals that hardly exhibit an electrodeposition reaction, metals that are difficult to chemically plate, ceramics, and the like.

く問題を解決するための手段〉 本発明は以上の問題点に鑑みなされたものであり、レノ
ストとしての役割をもつ微細パターンの上からプラズマ
溶射を用いて一般にエツチングが困難あるいは化学的な
析出が困難なセラミンクやタングステン等の金属材料を
熔融飛行させて、基板及びレジスト膜表面に付着、積W
Jさせた後で、レジスYを剥離して、微細パターンを形
成するものである。
Means for Solving the Problems> The present invention has been made in view of the above problems, and uses plasma spraying on top of a fine pattern that serves as a renost, which is generally difficult to etch or where chemical precipitation occurs. Difficult metal materials such as ceramic and tungsten are melted and flown to adhere to the surface of the substrate and resist film, resulting in a
After J, the resist Y is peeled off to form a fine pattern.

く作用〉 本発明では上記方法によってセラミ/りやタングステン
等の金属類でも、微細精密なパターンを特殊な薬液を使
わずとも短時間で大面積にわたって高品質に形成できる
Effects> According to the present invention, fine and precise patterns can be formed over a large area in a short time and with high quality even in ceramics/porous or metals such as tungsten, in a short time without using special chemicals.

〈実施例〉 以下本発明にかかる精密パターン製造方法の実施例につ
いて説明を行う。
<Examples> Examples of the precision pattern manufacturing method according to the present invention will be described below.

第1図は基板2上にタングステン層からなる電極1を有
するプリンター(放電プリンターや通電転写プリンター
)の印字ヘッド部分の平面図である。従来ではこの様な
電極を形成する際は、第3図に示すように基板2上にタ
ングステン層3を形成しく第4図参照)、その上1こ7
オトレジスト(ポリイミド)の微細パターン4を形成し
く同図a)、不要部分をエツチングによって除去しく同
図b)、7オ)レノストを除去(同図c)していた。こ
れに対し本発明では第2図に示すように基板2上に直接
フォトレノストの微細パターン4を形成しく同図a)、
次にタングステンのプラズマ溶射を行う二と警こよって
、タングステン層5を形成しく同図b)、次に7オトレ
ノストを剥離する(同図C)ものである。この処理によ
れば高能率に、しかも高品質な微細パターンを得ること
ができる。
FIG. 1 is a plan view of a print head portion of a printer (discharge printer or current transfer printer) having an electrode 1 made of a tungsten layer on a substrate 2. As shown in FIG. Conventionally, when forming such an electrode, a tungsten layer 3 is formed on the substrate 2 (see FIG. 4) as shown in FIG.
A fine pattern 4 of photoresist (polyimide) was formed (a) in the same figure, unnecessary portions were removed by etching (b), and 7e) renost was removed (c). In contrast, in the present invention, as shown in FIG. 2, a fine pattern 4 of photorenost is formed directly on the substrate 2.
Next, tungsten plasma spraying is carried out to form a tungsten layer 5 (FIG. 2B), and then the othrenost layer 7 is peeled off (FIG. 1C). According to this process, a fine pattern of high quality can be obtained with high efficiency.

ここで、上記プラズマ溶射について説明を行う。Here, the above plasma spraying will be explained.

溶射とは被覆を行う為の材料を熔融または半熔融し、こ
れを高速で基板に吹き付けて基板表面に皮膜を形晟する
方法である。そして、プラズマ溶射はプラズマ(高度に
電離し、全体として電気的中性の状態にある遁高温ガス
)を細いノズルから噴出させて形成したプラズマジェッ
トに、粉末状の材料を吹き込んで熔融、飛行させ、これ
を基板表面に付着、積層させて皮膜を形成するものであ
る。この装置の公知の61或は、@5図に示すように、
プラズマジェットを発生させるプラズマ溶射〃ン10、
アーク発生を開始させる高周波スタータ11、アークを
持続させるエネルギー供給源としての直流電源12、ア
ークがスの供給、制御ならびに電気系の制御のための制
御vc置13、プラズマジェットへ粉末材料を供給する
ためのホッパー14及び〃ンを高温より保護するための
冷却装置15からなる。
Thermal spraying is a method of melting or semi-melting a coating material and spraying it onto a substrate at high speed to form a film on the substrate surface. Plasma spraying involves ejecting plasma (a highly ionized, high-temperature gas that is electrically neutral as a whole) from a thin nozzle, then injecting a powdered material into the plasma jet, which melts and flies the jet. , which is adhered to and laminated on the surface of a substrate to form a film. As shown in Fig. 61 or @5 of this device,
Plasma spraying that generates a plasma jet〃10,
A high frequency starter 11 for starting arc generation, a DC power supply 12 as an energy supply source for sustaining the arc, a control VC device 13 for supplying and controlling the arc gas and controlling the electrical system, and supplying powder material to the plasma jet. It consists of a hopper 14 and a cooling device 15 to protect the hopper from high temperatures.

このプラズマ溶射はプラズマジェットの温度が高いので
高融点材料をコーティングでき、プラズマジェット流速
が速いので熔融粒子の衝突エネルギーが大きく結合力の
強い緻密な皮膜が得られ、素材の機械強度を劣化させな
り熱歪を与えず、コーティングスピードが速いので低コ
ストで皮膜を得ることが出来るものである。
This plasma spraying can coat high-melting point materials because the plasma jet temperature is high, and because the plasma jet flow rate is high, the collision energy of the molten particles is large and a dense coating with strong bonding force is obtained, which does not deteriorate the mechanical strength of the material. Since it does not cause thermal distortion and the coating speed is fast, it is possible to obtain a film at low cost.

以上の実施例ではタングステンを用いた電極について説
明したが、チタン合金等の高耐摩耗合金や、S i 3
 N 4”lの絶縁膜や、導電性セラミックを用いた微
細パターンの製造についても本発明は適用可能である。
In the above embodiments, electrodes using tungsten were explained, but electrodes using high wear-resistant alloys such as titanium alloys, Si3
The present invention is also applicable to the production of fine patterns using N4''l insulating films and conductive ceramics.

尚、7オトレンスト(ポリイミド)がプラズマ溶射によ
って傷む場合には、まず、基板上に、所定パターンの7
オトレジスト上にニッケル、銅等のメッキ膜を形成し、
フォトレノストの除去によってメッキ膜のパターン化を
行い、その上から上記プラズマ溶射を行なうようにする
ことが安定な膜を得る為に極めて好ましい。
In addition, if 7-otolenst (polyimide) is damaged by plasma spraying, first apply a predetermined pattern of 7
A plating film of nickel, copper, etc. is formed on the photoresist,
In order to obtain a stable film, it is extremely preferable to pattern the plating film by removing the photorenost and then perform the plasma spraying on top of the pattern.

尚、以上の説明ではプリンターの印字ヘッドのような幅
数ミリのものを示したが、それ以外に本発明によれば通
常の用紙幅程度の広い面積にわたる精密な微細パターン
をも容易に得ることができる。
In the above explanation, a print head with a width of a few millimeters, such as a printer's print head, was shown, but in addition to that, according to the present invention, it is also possible to easily obtain a precise fine pattern over a wide area about the width of a normal sheet of paper. I can do it.

く効果〉 本発明によればタングステン等の高融点の材料を用いた
精密且つ微細なパターンを容易に高能率で品質良く形成
することが出来る。
Effects> According to the present invention, a precise and fine pattern using a high melting point material such as tungsten can be easily formed with high efficiency and high quality.

4、図面のf2!1ilitな説明 第1図は印字へンド部分の平面図、第2図は本発明にか
かる製法を示す工程説明図、第3図は従来の製法の工程
説明図、第4図はその斜視図、第5図はプラズマ溶射装
置の説明図である。
4.F2!1ilit explanation of the drawings Figure 1 is a plan view of the printing hand part, Figure 2 is a process explanatory diagram showing the manufacturing method according to the present invention, Figure 3 is a process explanatory diagram of the conventional manufacturing method, The figure is a perspective view thereof, and FIG. 5 is an explanatory diagram of the plasma spraying apparatus.

図中 1:印字ヘッド電極 2:基板 3:タングステンメタライズ層 4ニアオドレノスト層 5:プラズマ溶射タングステン層 第4図 第5図 (a) 第2図 第3図In the figure 1: Print head electrode 2: Substrate 3: Tungsten metallized layer 4 Near Odrenost Formation 5: Plasma sprayed tungsten layer Figure 4 Figure 5 (a) Figure 2 Figure 3

Claims (1)

【特許請求の範囲】[Claims] (1)基板上に所定パターンの皮膜を形成し、該皮膜上
に成膜材料をプラズマ溶射によって被覆し、上記皮膜を
除去し、精密パターン膜を形成したことを特徴とする精
密パターン製造方法。
(1) A precision pattern manufacturing method, which comprises forming a film in a predetermined pattern on a substrate, coating the film with a film-forming material by plasma spraying, and removing the film to form a precision pattern film.
JP60246778A 1985-11-01 1985-11-01 Production of precise pattern Pending JPS62107054A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60246778A JPS62107054A (en) 1985-11-01 1985-11-01 Production of precise pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60246778A JPS62107054A (en) 1985-11-01 1985-11-01 Production of precise pattern

Publications (1)

Publication Number Publication Date
JPS62107054A true JPS62107054A (en) 1987-05-18

Family

ID=17153517

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60246778A Pending JPS62107054A (en) 1985-11-01 1985-11-01 Production of precise pattern

Country Status (1)

Country Link
JP (1) JPS62107054A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000016159A1 (en) * 1998-09-12 2000-03-23 INSTITUT FüR MIKROTECHNIK MAINZ GMBH Method for producing a body having microstructures comprised of material applied by thermal spraying
JP2011509349A (en) * 2008-01-08 2011-03-24 トレッドストーン テクノロジーズ インク. Highly conductive surface for electrochemical applications

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000016159A1 (en) * 1998-09-12 2000-03-23 INSTITUT FüR MIKROTECHNIK MAINZ GMBH Method for producing a body having microstructures comprised of material applied by thermal spraying
JP2011509349A (en) * 2008-01-08 2011-03-24 トレッドストーン テクノロジーズ インク. Highly conductive surface for electrochemical applications

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