JPS62106382A - Apparatus for measuring magnetostriction constant of magnetic membrane - Google Patents
Apparatus for measuring magnetostriction constant of magnetic membraneInfo
- Publication number
- JPS62106382A JPS62106382A JP24616985A JP24616985A JPS62106382A JP S62106382 A JPS62106382 A JP S62106382A JP 24616985 A JP24616985 A JP 24616985A JP 24616985 A JP24616985 A JP 24616985A JP S62106382 A JPS62106382 A JP S62106382A
- Authority
- JP
- Japan
- Prior art keywords
- stress
- magnetic
- thin film
- measuring
- magnetic thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Measuring Magnetic Variables (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、磁性薄膜の磁歪定数測定装置に関し特に高感
度、高精度の磁性薄膜の磁歪定数測定装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a device for measuring the magnetostriction constant of a magnetic thin film, and particularly to a highly sensitive and highly accurate device for measuring the magnetostriction constant of a magnetic thin film.
従来、磁性薄膜の磁歪定数測定装置については、アイ・
イー・イー・イートランザクッション オブ マグネテ
ィックス（ＩＥＥＥ Ｔｒａｎｓ、 Ｍａｇｎｅｔｉｃ
ｓＭＡＧ１２，８１９ （１９７６年））におけるクロ
クホルム（Ｋｌｏｋｈｏｌｍ）によるザ メジャメント
オブ マグネトストリクジョン イン フェロマグネ
ティック シン フィルム（”’ｒｈｅ Ｍｅａｓｕｒ
ｅｍｅｎｔ ｏｆＭａｇｎｅｔｏｓｔｒｉｃｔｉｏｎｉ
ｎ Ｆｅｒｒｏｍａｇｎｅｔｉｃ Ｔｈ１ｎ Ｆｉｌｍ
ｓ”）と題する文献において論じられている。Conventionally, the equipment for measuring magnetostriction constants of magnetic thin films was
IEEE Trans Cushion of Magnetics
The Measurement of Magnetic Restriction in Ferromagnetic Thin Film ("'rhe Measurer") by Klokholm in sMAG12, 819 (1976)
element of Magneto strictioni
n Ferromagnetic Th1n Film
s'').
この方法は、磁性薄膜が付着している短冊状基板の一端
を固定して片持ち梁とし、自由端に平行に固定電極を配
置し、磁場を基板と平行に印加して磁性薄膜の磁歪によ
り基板を歪曲せしめ、その自由端と固定電極との間隔の
変化を基板の自由端と固定電極で構成するコンデンサの
電気容量の変化により８１ｑ定し、その変位より磁歪定
数を決定する方法である。In this method, one end of a strip-shaped substrate to which a magnetic thin film is attached is fixed to form a cantilever beam, a fixed electrode is placed parallel to the free end, and a magnetic field is applied parallel to the substrate, causing the magnetostriction of the magnetic thin film to In this method, the substrate is distorted, the change in the distance between the free end of the substrate and the fixed electrode is determined by the change in the capacitance of a capacitor constituted by the free end of the substrate and the fixed electrode, and the magnetostriction constant is determined from the displacement.
しかし、上記の方法は感度が不十分であり、感度を一ヒ
げるためには短冊状基板の長さを７０ｎｎ以上、厚さを
０ 、３５ ｎｎ以下にしなければならない。However, the sensitivity of the above method is insufficient, and in order to improve the sensitivity, the length of the strip-shaped substrate must be 70 nn or more and the thickness 0.35 nn or less.
また、例えば、長さ７０ｍｍ、幅１５ｍ、厚さ０．３５
画の短冊状基板に付着した磁性薄膜の２．５ Ｘ １０
−７の磁歪定数を測定するためには磁性薄膜の膜厚が約
１μｍ以上であることが必要であり、磁性薄膜の磁歪定
数を高精度で測定することが困難であった。Also, for example, the length is 70 mm, the width is 15 m, and the thickness is 0.35 mm.
2.5 x 10 pieces of magnetic thin film attached to a strip-shaped substrate
In order to measure the magnetostriction constant of −7, the thickness of the magnetic thin film must be approximately 1 μm or more, and it has been difficult to measure the magnetostriction constant of the magnetic thin film with high accuracy.
本発明の目的は、従来方法における欠点を解決し、高感
度かつ高精度である磁性薄膜の磁歪定数測定装置を提供
することにある。SUMMARY OF THE INVENTION An object of the present invention is to solve the drawbacks of conventional methods and to provide a highly sensitive and highly accurate magnetostriction constant measuring device for magnetic thin films.
上記目的を達成するために、本発明では、磁性薄膜に応
力を加え、逆磁歪効果によって生じる磁気異方性定数の
変化量を測定し、応力と磁気異方性定数の変化量との関
係から磁歪定数を測定する。In order to achieve the above object, the present invention applies stress to a magnetic thin film, measures the amount of change in the magnetic anisotropy constant caused by the inverse magnetostriction effect, and calculates the relationship between the stress and the amount of change in the magnetic anisotropy constant. Measure the magnetostriction constant.
特に磁気異方性定数の変化量を測定する手段としては、
磁気異方性定数の変化により生ずるトルクの変化量を測
定する方法、磁気ヒステリシス曲線の変化を測定する方
法９強磁性共鳴磁場の変化量を測定する方法などがある
が、磁気ヒステリシス曲線の変化を測定する方法は保磁
力の大きい磁性薄膜の磁歪定数の測定が困難である２強
磁性共鳴磁場の変化量を測定する方法は、磁性薄膜に応
力を加えた場合と加えてない場合の共鳴磁場の変化率が
１％程度の大きさしかないためにｉ＋ｌＩ定が困難であ
るという問題がある。従って、感度、精度の面から磁気
異方性の変化量はトルクの変化量からｄｌり定すること
が望ましい。In particular, as a means of measuring the amount of change in the magnetic anisotropy constant,
There are methods to measure the amount of change in torque caused by changes in the magnetic anisotropy constant, methods to measure changes in the magnetic hysteresis curve, and methods to measure the amount of change in the ferromagnetic resonance magnetic field. The measurement method is difficult to measure the magnetostriction constant of a magnetic thin film with a large coercive force.2 The method of measuring the change in the ferromagnetic resonance magnetic field is to measure the change in the resonant magnetic field when stress is applied to the magnetic thin film and when stress is not applied. There is a problem in that it is difficult to determine i+lI because the rate of change is only about 1%. Therefore, from the viewpoint of sensitivity and accuracy, it is desirable to determine the amount of change in magnetic anisotropy by dl from the amount of change in torque.
本装置は、少なくとも磁性薄膜に応力を印加する装置、
電磁石、トルク測定装置、記録装置から成っており、さ
らにこれらを制御するコンピュータなどの制御装置、デ
ィスプレイ、プリンタ、自動的に磁性薄膜に応力を印加
する装置、磁性薄膜に印加した応力を測定する装置を含
むことが望ましい。This device includes at least a device that applies stress to a magnetic thin film;
It consists of an electromagnet, a torque measuring device, and a recording device, as well as a control device such as a computer that controls these, a display, a printer, a device that automatically applies stress to the magnetic thin film, and a device that measures the stress applied to the magnetic thin film. It is desirable to include.
以下１本発明の一実施例を図面を参照しながら説明する
。An embodiment of the present invention will be described below with reference to the drawings.
第２図は、磁性薄膜が付着している短冊状基板を歪曲さ
せ、磁性薄膜に応力を印加する装置の一例を示す。２１
は磁性薄膜が付着している短冊状基板２２は装置本体、
２３は基板中央部に力を加え、基板を歪曲させるネジで
ある。この基板の厚さと曲率を測定することにより磁性
薄膜に加えた応力を算出する。FIG. 2 shows an example of an apparatus that distorts a strip-shaped substrate to which a magnetic thin film is attached and applies stress to the magnetic thin film. 21
The strip-shaped substrate 22 to which the magnetic thin film is attached is the main body of the device,
23 is a screw that applies force to the center of the board to distort the board. By measuring the thickness and curvature of this substrate, the stress applied to the magnetic thin film is calculated.
第１図は、磁性薄膜の磁歪定数測定装置の一例である。FIG. 1 is an example of an apparatus for measuring the magnetostriction constant of a magnetic thin film.
１１は電磁石、１２は電磁石のポールピースである。台
座１３にはモータがついており、電磁石を回転させるこ
とができる。１４は試料台であり、トルク測定装置１５
と連結されており、電磁石１１を回転させることにより
第３図の様な試料と印加磁場のなす角度によるトルク変
化を測定できる。この際、試料を十分飽和する磁場をか
ける。まず、磁性薄膜が付着している短冊状基板のトル
ク曲線を歪曲させていない状態で測定してコンピュータ
１６に信号を入力する。同時に、トルク曲線は、Ｘ−Ｙ
レコーダ１７に記録される。11 is an electromagnet, and 12 is a pole piece of the electromagnet. A motor is attached to the pedestal 13 and can rotate the electromagnet. 14 is a sample stage, and a torque measuring device 15
By rotating the electromagnet 11, it is possible to measure changes in torque due to the angle between the sample and the applied magnetic field as shown in FIG. At this time, apply a magnetic field that sufficiently saturates the sample. First, the torque curve of the strip-shaped substrate to which the magnetic thin film is attached is measured in an undistorted state, and the signal is input to the computer 16. At the same time, the torque curve is
It is recorded on the recorder 17.
コンピュータ１６は試料が一軸磁気異方性を持っている
と仮定してトルク曲線をフーリエ解析しトルクの大きさ
を求める。さらに磁性薄膜が付着している短冊状基板の
トルク曲線を歪曲させた状態で測定し、コンピュータ１
６に信号を入力し、同様の解析を行わせる。そしてコン
ピュータ１６は、磁性薄膜に応力を加えた場合と応力を
加えていない場合のトルクの大きさの差ΔＴを求める。The computer 16 assumes that the sample has uniaxial magnetic anisotropy and performs Fourier analysis on the torque curve to determine the magnitude of the torque. Furthermore, the torque curve of the strip-shaped substrate to which the magnetic thin film was attached was measured in a distorted state, and the computer 1
A signal is input to 6 and the same analysis is performed. Then, the computer 16 calculates the difference ΔT in the magnitude of the torque when stress is applied to the magnetic thin film and when no stress is applied.
ここで磁性薄膜の体積をコンピュータ１６に入力すると
、磁性薄膜に応力を加えた場合と応力を加えていない場
合の磁気異方性定数の差ΔＫが算出される。そして、磁
性薄膜の磁歪定数λＳとΔにと磁性薄膜に加えた応力σ
との関係
Δに＝−λＳσ
よりλＳが算出され、コンピュータ１６のディスプレイ
１８及びプリンター９に表示される。Here, when the volume of the magnetic thin film is input into the computer 16, the difference ΔK between the magnetic anisotropy constants when stress is applied to the magnetic thin film and when no stress is applied is calculated. Then, the magnetostriction constants λS and Δ of the magnetic thin film and the stress σ applied to the magnetic thin film
λS is calculated from the relationship Δ=-λSσ and displayed on the display 18 of the computer 16 and the printer 9.
上記実施例に基づいて行った、長さ９ 、７ ｒａ 。Length 9, 7 ra based on the above example.
幅：３Ｗ１１．厚さ０．３＋＋＊＋＋の基板上に付着し
ている膜厚０．５μｍのＦｅ Ｃｏ ５１合金スパ
ツタ膜の磁歪定数の測定結果を第１表に示す。この結果
、磁歪定数Ｉ Ｘ １０−７まで精度良く測定できるこ
とがわかった。Width: 3W11. Table 1 shows the measurement results of the magnetostriction constant of a sputtered Fe Co 51 alloy film with a thickness of 0.5 μm attached on a substrate with a thickness of 0.3++*++. As a result, it was found that magnetostriction constants up to I x 10-7 could be measured with high accuracy.
第１表
また、上記実施例の拡張として磁性薄膜に応力を印加す
る装置の自動化の一例を第４図に示す。Table 1 Further, as an extension of the above embodiment, an example of automation of an apparatus for applying stress to a magnetic thin film is shown in FIG.
応力制御装置４１に制御されたネジ回転装置４２は、第
２図に示した磁性薄膜に応力を印加する装置４３に付属
しているネジ４４を回し、基板４５を歪曲させる。その
際、発光装置４６が発光した光を基板４５に当てる。基
板４５が歪曲するに従い、反射光４７の方向が変化し、
ある角度に達すると受光装置４８に反射光４７が入射し
、応力制御装置４１はネジ回転装置４２を停止させる。A screw rotation device 42 controlled by the stress control device 41 turns a screw 44 attached to a device 43 for applying stress to the magnetic thin film shown in FIG. 2, thereby distorting the substrate 45. At that time, the light emitted by the light emitting device 46 is applied to the substrate 45. As the substrate 45 is distorted, the direction of the reflected light 47 changes,
When a certain angle is reached, the reflected light 47 enters the light receiving device 48, and the stress control device 41 stops the screw rotating device 42.
磁性薄膜に加える応力の大きさは受光装置４８の位置に
よって調節することができる。この自動的に磁性薄膜に
応力を印加する装置の使用により、応力の印加と印加し
た応力の１ｉｌｌｌ定が省力化され、４１１定時間を約
５０％短縮することができた。The magnitude of the stress applied to the magnetic thin film can be adjusted by adjusting the position of the light receiving device 48. By using this device that automatically applies stress to the magnetic thin film, it was possible to save labor in applying stress and determining the applied stress oneill, and it was possible to shorten the 411 determination time by about 50%.
本発明によれば高感度で磁性簿膜の磁歪定数を測定でき
るので、長さ１０ｍ＋＋、厚さ０．３Ｉ程度の基板上に
付着した膜厚１μｍ以下、磁歪定数ｌＸｌ０−’程度の
磁性薄膜であっても磁歪定数を測定できることが確認で
きた。士た応力を加えていない状態で磁性薄膜の持って
いる磁気異方性がいかなる方向であっても、また保磁力
が大きくても磁歪定数の測定には支障がないので測定情
度が良いことが確認できた。According to the present invention, it is possible to measure the magnetostriction constant of a magnetic film with high sensitivity, so a magnetic thin film with a film thickness of 1 μm or less and a magnetostriction constant of about l It was confirmed that the magnetostriction constant could be measured even if No matter where the magnetic anisotropy of the magnetic thin film is in any direction, or the coercive force is large, there is no problem in measuring the magnetostriction constant, so the measurement conditions are good. was confirmed.
第１図は磁性薄膜の磁歪定数測定装置の一例の正面図、
第２図は磁性薄膜に応力を印加する装置の一例の正面図
、第３図はトルク曲線の一例を示す図、第４図は磁性薄
膜に応力を印加する装置の自動化の説明図である。
１１・・・電磁石、１２・・・電磁石のポールピース。
１３・・電磁石の台座、１４・・・試料台、１５・・・
トルク測定装置、１６・・・コンピュータ、１７・・・
Ｘ−Ｙレコーダ、１８・・・コンピュータのディスプレ
イ。
１９・・・プリンタ、２１・・・基板、２２・・・装置
本体。
２３・・ネジ、４］・・・応力制御装置、４２・・・ネ
ジ回転装置、４３・・・基板を歪曲させる装ｊり、４４
・・・基板を歪曲させるネジ、４５・・基板、４６・・
・発光装置、４７・・・反射光、４８・・・受光装置。Figure 1 is a front view of an example of a device for measuring magnetostriction constants of magnetic thin films.
FIG. 2 is a front view of an example of a device for applying stress to a magnetic thin film, FIG. 3 is a diagram showing an example of a torque curve, and FIG. 4 is an explanatory diagram of automation of the device for applying stress to a magnetic thin film. 11... Electromagnet, 12... Electromagnet pole piece. 13... Electromagnet pedestal, 14... Sample stand, 15...
Torque measuring device, 16... Computer, 17...
X-Y recorder, 18... computer display. 19... Printer, 21... Board, 22... Device main body. 23... Screw, 4]... Stress control device, 42... Screw rotation device, 43... Device for distorting the substrate, 44
... Screw that distorts the board, 45... Board, 46...
- Light emitting device, 47...Reflected light, 48... Light receiving device.
Claims (1)
磁気異方性定数の変化量を測定し、応力と磁気異方性定
数の変化量との関係から磁歪定数を測定することを特徴
とする磁性薄膜の磁性定数測定装置。 ２、特許請求範囲第１項に記載の、磁気異方性定数の変
化量をトルクの変化量の測定により求めることを特徴と
する磁性薄膜の磁歪定数測定装置。[Claims] 1. Stress is applied to a magnetic thin film, the amount of change in the magnetic anisotropy constant caused by the inverse magnetostriction effect is measured, and the magnetostriction constant is determined from the relationship between the stress and the amount of change in the magnetic anisotropy constant. A device for measuring magnetic constants of a magnetic thin film, which measures the magnetic constants of a magnetic thin film. 2. An apparatus for measuring the magnetostriction constant of a magnetic thin film, characterized in that the amount of change in the magnetic anisotropy constant is determined by measuring the amount of change in torque, as set forth in claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24616985A JPS62106382A (en) | 1985-11-05 | 1985-11-05 | Apparatus for measuring magnetostriction constant of magnetic membrane |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24616985A JPS62106382A (en) | 1985-11-05 | 1985-11-05 | Apparatus for measuring magnetostriction constant of magnetic membrane |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62106382A true JPS62106382A (en) | 1987-05-16 |
Family
ID=17144536
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24616985A Pending JPS62106382A (en) | 1985-11-05 | 1985-11-05 | Apparatus for measuring magnetostriction constant of magnetic membrane |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62106382A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7728585B2 (en) | 2002-12-20 | 2010-06-01 | International Business Machines Corporation | Systems for measuring magnetostriction in magnetoresistive elements |
| CN102890252A (en) * | 2012-09-26 | 2013-01-23 | 中国科学院宁波材料技术与工程研究所 | Method for measuring flexible magnetic film saturated magnetostriction coefficient |
| JP2018004654A (en) * | 2017-08-29 | 2018-01-11 | 株式会社東栄科学産業 | Magnetostriction measuring device and magnetostriction measurement method |
| JP2018004491A (en) * | 2016-07-04 | 2018-01-11 | 株式会社東栄科学産業 | Magnetostriction measuring device and magnetostriction measurement method |
-
1985
- 1985-11-05 JP JP24616985A patent/JPS62106382A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7728585B2 (en) | 2002-12-20 | 2010-06-01 | International Business Machines Corporation | Systems for measuring magnetostriction in magnetoresistive elements |
| CN102890252A (en) * | 2012-09-26 | 2013-01-23 | 中国科学院宁波材料技术与工程研究所 | Method for measuring flexible magnetic film saturated magnetostriction coefficient |
| CN102890252B (en) * | 2012-09-26 | 2015-10-14 | 中国科学院宁波材料技术与工程研究所 | A kind of measuring method of flexible magnetic film saturation magnetostriction constant |
| JP2018004491A (en) * | 2016-07-04 | 2018-01-11 | 株式会社東栄科学産業 | Magnetostriction measuring device and magnetostriction measurement method |
| JP2018004654A (en) * | 2017-08-29 | 2018-01-11 | 株式会社東栄科学産業 | Magnetostriction measuring device and magnetostriction measurement method |
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