JPS62105469A - Reading device and its manufacture - Google Patents
Reading device and its manufactureInfo
- Publication number
- JPS62105469A JPS62105469A JP60245578A JP24557885A JPS62105469A JP S62105469 A JPS62105469 A JP S62105469A JP 60245578 A JP60245578 A JP 60245578A JP 24557885 A JP24557885 A JP 24557885A JP S62105469 A JPS62105469 A JP S62105469A
- Authority
- JP
- Japan
- Prior art keywords
- light
- photoconductor
- etching
- light source
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Facsimile Heads (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、例えばファクシミリ装置の小型化を目指した
もので、実質上原稿と寸法的に1:1に対応さセた光電
変換素子アレイを配置して成る密着型イメージセンサな
どの読取り装置に関するものである。更に、その製法に
関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention aims at downsizing facsimile machines, for example, and uses a photoelectric conversion element array that corresponds substantially 1:1 in size to a document. The present invention relates to a reading device such as a contact type image sensor that is arranged in the form of a contact image sensor. Furthermore, it relates to its manufacturing method.
近時、密着型イメージセンサの開発が活発化しており、
この装置には原稿からの反射光を集ij lノlロッド
・レンズ・アレイを通して検知する型式やこのアレイを
使わずに優れた光量伝達率、小型化を達成する型式など
種々検討されている。Recently, the development of contact image sensors has become more active.
Various types of this device have been studied, including a type that detects the reflected light from the original through a condensing rod lens array, and a type that achieves excellent light transmittance and miniaturization without using this array.
第1図は集束性ロンド・レンズ・アレイを用いない密着
型読取り系を示す概略図であり、原稿1と寸法的に実質
上l:1に対応さセた光検知部2が原稿1に密着し、発
光ダイオード3等の光源が原稿1を投光し、その反射光
を光検知部2で受光するものである。FIG. 1 is a schematic diagram showing a close-contact reading system that does not use a focusing Rondo lens array, in which a light detection section 2, which has a substantially 1:1 dimensional correspondence with the original 1, is placed in close contact with the original 1. A light source such as a light emitting diode 3 projects light onto the original 1, and the light detecting section 2 receives the reflected light.
第2図及び第3図は光検知部2に相当する読取り装置で
あり、第3図は第2図中切断面綿X−Xから見た断面図
である。2 and 3 show a reading device corresponding to the photodetector 2, and FIG. 3 is a cross-sectional view taken along line X--X in FIG. 2.
即ち、光透過性の透明材料、例えばガラスから成る基板
4上には共通電極5a、5b・・・が間隔をあけてクロ
ムやアルミニウムなどが蒸着されて形成される。共通電
極5a、5b上には光導電体6が形成される。光導電体
6−Lには、スズーインジウJ1酸化物(ITO)など
の光透過性の透明材料から成る透明電極7がスパツタリ
ングまたは蒸着により形成される。透明電極7は各光電
変換素子毎に個別的に形成され、この電極7には引出し
電極8が個別に対応してクロムやアルミニウムなどが蒸
着されて形成される。最上部には、光透過性の透明材料
、例えばガラスなどから成る保護層9が形成される。共
通電極5a、5b、光導電体6及び透明電極7には光通
過孔10が形成される。That is, common electrodes 5a, 5b, . . . are formed on a substrate 4 made of a light-transmitting transparent material, such as glass, by vapor-depositing chromium, aluminum, or the like at intervals. A photoconductor 6 is formed on the common electrodes 5a, 5b. A transparent electrode 7 made of a light-transmissive transparent material such as tin oxide (ITO) is formed on the photoconductor 6-L by sputtering or vapor deposition. A transparent electrode 7 is formed individually for each photoelectric conversion element, and a lead electrode 8 is formed by vapor-depositing chromium, aluminum, etc. in correspondence with the electrode 7 individually. A protective layer 9 made of a light-transmitting transparent material, such as glass, is formed on the top. Light passing holes 10 are formed in the common electrodes 5a and 5b, the photoconductor 6, and the transparent electrode 7.
また、基板4の背後には光源としての発光ダイオ−1゛
3aが配置され、保護層9の上方には原稿1が配置され
て発光ダイオード3aから基板4及び保護層9を経て原
稿1へ投光する。この反射光は光im過孔10近傍の透
明電極7を透過して光導電体6によって受光される。か
くして各光通過孔10近傍には光電変換素子が形成され
てアレイ状に配列された読取り装置となる。Further, a light emitting diode 1-3a as a light source is arranged behind the substrate 4, and an original 1 is arranged above the protective layer 9, and the light emitting diode 3a passes through the substrate 4 and the protective layer 9 and is projected onto the original 1. Shine. This reflected light passes through the transparent electrode 7 near the light im-hole 10 and is received by the photoconductor 6. In this way, photoelectric conversion elements are formed near each light passage hole 10, resulting in a reading device arranged in an array.
J−
上記光検知部によれば、第4図〔4A〕〜〔4E〕の工
程により形成される。即ち、〔4A〕においては基板4
上に共通電極5、光導電体6、透明電極7及び引出し電
極8が順次形成される。尚、11はレジスト膜である。J- According to the above photodetecting section, it is formed by the steps shown in FIG. 4 [4A] to [4E]. That is, in [4A], the substrate 4
A common electrode 5, a photoconductor 6, a transparent electrode 7, and an extraction electrode 8 are sequentially formed thereon. Note that 11 is a resist film.
次いで〔4B〕において、光導電体6、例えばアモルフ
ァスシリコン膜をCF4ガスによってプラズマエツチン
グする。Next, in [4B], the photoconductor 6, for example, an amorphous silicon film, is plasma etched using CF4 gas.
〔4C〕においては、レジスト膜の除去後、再びフォト
レジストでパターン形成し、引出し電極8及び共通電極
5をエツチングし、受光部及び光i1n過孔(l O)
を形成する。〔4D〕においてシ、1更にフォトレジス
トでパターン形成して再度光導電体6をエツチングし、
共通電極5を光通過孔1゜の側に突き出させる。最後に
〔4E〕において、レジスト膜11及び個別極側の透明
電極7の一部を除去する。In [4C], after removing the resist film, a photoresist pattern is formed again, the extraction electrode 8 and the common electrode 5 are etched, and the light receiving part and the light i1n hole (lO) are etched.
form. In [4D], step 1: further pattern forming with photoresist and etching the photoconductor 6 again;
The common electrode 5 is made to protrude toward the 1° side of the light passage hole. Finally, in [4E], the resist film 11 and a portion of the transparent electrode 7 on the individual electrode side are removed.
かくして得られた光検知部は第3図に示す通りとなる。The photodetector thus obtained is as shown in FIG.
しかしながら、上記光検知部によれば、保護層9が5i
02.5i−0−Nなどのガラスをスパッタリング法や
プラズマCVD法により形成されるのに際してこの被着
面に凹凸があるためにステップカバレッジに劣り、光導
電体6が露出されやすくなっている。このために湿気や
水分等により共通電極5が電解腐蝕され、素子特性を劣
化せしめている。However, according to the photodetector, the protective layer 9 is 5i
When glass such as 02.5i-0-N is formed by sputtering or plasma CVD, the surface to which it is adhered has irregularities, resulting in poor step coverage and the photoconductor 6 being easily exposed. For this reason, the common electrode 5 is electrolytically corroded by humidity, moisture, etc., and the device characteristics are deteriorated.
また、この保護層9の形成に伴って保護層9の表面にも
被着面の凹凸に応じた凹凸が形成される。Furthermore, along with the formation of the protective layer 9, the surface of the protective layer 9 is also formed with irregularities corresponding to the irregularities of the surface to which it is adhered.
従って保護層9の四部9aに汚れや埃が堆積し易くなり
、このノイズ成分に起因してS/N比を低下せしめてい
た。Therefore, dirt and dust tend to accumulate on the four parts 9a of the protective layer 9, and the S/N ratio is lowered due to this noise component.
更にまた、製造工程中、光通過孔10に共通電極5の突
出し部を形成するため、光導電体6、共通電極5及び引
出し電極8をエツチングした後、再度光導電体のエツチ
ングを行っていた。そのため光導電体6の光通過孔部は
厚み約2μ11辺が約60μmの四部になっており、レ
ジストコート及びマスクアライメントが困難となり、露
光も基板の裏側から行わなければならないという問題が
あった。Furthermore, during the manufacturing process, in order to form a protruding portion of the common electrode 5 in the light passage hole 10, after etching the photoconductor 6, common electrode 5, and extraction electrode 8, the photoconductor was etched again. . Therefore, the light passage hole portion of the photoconductor 6 has four parts with a thickness of about 2 μm and a side of about 60 μm, which makes resist coating and mask alignment difficult, and there is a problem that exposure must be performed from the back side of the substrate.
しかも、CF4プラズマエツチングにより共通電極5、
例えば逆バイアス印加時においてクロムが腐蝕し易くな
るという問題もあり、更に、プラズマによりアモルファ
スシリコン光導電体の特性が劣化するという問題もあっ
た。Moreover, by CF4 plasma etching, the common electrode 5,
For example, there is a problem that chromium tends to corrode when a reverse bias is applied, and there is also a problem that the characteristics of the amorphous silicon photoconductor are deteriorated by plasma.
従って本発明の目的は軟土した問題をすべて解決するこ
とにあり、ノイノ成分の低減を抑制してS/N比を向−
卜させ、高性能の読取り装置を提供することにある。Therefore, the purpose of the present invention is to solve all the problems caused by soft soil, and to improve the S/N ratio by suppressing the reduction of noise components.
The objective is to provide a high-performance reading device.
本発明の他の目的は製造工程を簡略して製造歩留りを向
上させることにより製造コストの低減及び製造効率の向
上をねらった読取り装置の製法を提供することにある。Another object of the present invention is to provide a method for manufacturing a reading device that aims to reduce manufacturing costs and improve manufacturing efficiency by simplifying the manufacturing process and improving manufacturing yield.
本発明によれば、基板の第1板面上に共通電極、光導電
体及び個別電極を具備し、且つ該基板の第2板面側に光
源を配置して光導電体に光通過孔を設けると共に該光i
llll全孔次元的に複数個形成し、該光源から該光通
過孔を介して第1板面側の被検知体を投光し、その反射
光を光1ffl過孔近傍の光導電体で受光して読取り信
号が得られるようにした読取り装置において、前記光導
電体の光im過孔部に前記光源へ向かって先細りになる
ようにテーパを形成したことを特徴とする読取り装置が
提供される。According to the present invention, a common electrode, a photoconductor, and an individual electrode are provided on a first plate surface of a substrate, a light source is arranged on a second plate side of the substrate, and a light passage hole is formed in the photoconductor. In addition to providing the light i
A plurality of 1ffl holes are formed dimensionally, and the light source emits light onto the object to be detected on the first plate side through the light passing hole, and the reflected light is received by a photoconductor near the 1ffl hole. There is provided a reading device in which a reading signal can be obtained by using a reading device, characterized in that a light imm through hole of the photoconductor is formed with a taper so as to taper toward the light source. .
更に本発明によれば、基板の第1板面上に一次元的に複
数個の光電変換素子を具備し、且つ該基板の第2板面側
に光源を配置して光電変換素子に光im通過孔形成し、
該光源から該光通過孔を介して第1板面側の光検知体を
投光し、その反射光を光電変換素子で受光するようにし
た読取り装置の製法において、下記(A)乃至(F)工
程を具備して前記光通過孔に光源へ向かって先細りのテ
ーパを形成するようにしたことを特徴とする読取り装置
の製法が提供される。即ち、
(A) ・・・基板の第1板面上に共通電極を形成す
る。Furthermore, according to the present invention, a plurality of photoelectric conversion elements are provided one-dimensionally on the first plate surface of the substrate, and a light source is arranged on the second plate surface side of the substrate to direct light to the photoelectric conversion elements. Forming a passage hole,
In the method for manufacturing a reading device in which light is emitted from the light source to the photodetector on the first plate surface side through the light passage hole, and the reflected light is received by a photoelectric conversion element, the following (A) to (F) are provided. ) A method for manufacturing a reading device is provided, characterized in that the light passing hole is tapered toward the light source by forming the light passage hole. That is, (A)...A common electrode is formed on the first plate surface of the substrate.
(B) ・・・共通電極上に光導電体を形成する。(B)...A photoconductor is formed on the common electrode.
(C) ・・・光jm通過孔除く光導電体上に個別電
極を形成する。(C)...Individual electrodes are formed on the photoconductor excluding the light jm passage hole.
(D) ・・・光導電体をエツチングする。(D) Etching the photoconductor.
1) ・・・共通電極をエツチングして光通過孔を形
成する。1) Etching the common electrode to form a light passage hole.
(F) ・・・エッチングにより個別電極に受光部を
形成する。(F)...A light receiving portion is formed on the individual electrode by etching.
以下、第1図に示した密着型読取り系を例にとって本出
願人が先に特開昭60−70870号公報にて提案した
読取り装置用電気回路に基づき本発明の詳細な説明する
。Hereinafter, the present invention will be explained in detail based on the electric circuit for a reader proposed by the present applicant in Japanese Patent Application Laid-Open No. 60-70870, taking the contact type reading system shown in FIG. 1 as an example.
第5図は第2図に示した如き読取り装置を製造するため
の本発明の製造工程を示し、第6図は本発明の読取り装
置を示している。FIG. 5 shows a manufacturing process according to the invention for manufacturing a reading device such as that shown in FIG. 2, and FIG. 6 shows a reading device according to the invention.
本発明の製法によれば、第5図の〔5A〕において、ガ
ラスなどの基板4の表面に真空蒸着法により膜厚約30
00へのクロム膜を形成し、次いでフォトリソグラフィ
ー法によりパターンニングを行って共通電極5とした。According to the manufacturing method of the present invention, in [5A] in FIG.
A chromium film was formed on 00, and then patterned by photolithography to form a common electrode 5.
次いでモノシランガスをグロー放電分解して厚み約1.
5μmのアモルファスシリコン膜を形成して光導電体6
とした。Next, monosilane gas is decomposed by glow discharge to a thickness of about 1.
A 5 μm amorphous silicon film is formed to form a photoconductor 6.
And so.
続けて個別電極としてTTOから成る引出し電極8を厚
み約3000人で形成し、然る後、アモルファスシリコ
ンエツチング用のパターンt−形成した。〔5B〕及び
〔5C〕は光導電体のエツチング液程であり、〔5B〕
ではエツチングレートの速いエツチング液、〔5C〕で
はエツチングレートの遅いエツチング液を用いることに
より光導電体6の光i11過孔部6aに光源に向かって
先細りになるようにテーパが形成される。Subsequently, an extraction electrode 8 made of TTO was formed as an individual electrode to a thickness of about 3,000 mm, and then a pattern T-for amorphous silicon etching was formed. [5B] and [5C] are photoconductor etching liquids, and [5B]
By using an etching solution with a fast etching rate in [5C] and an etching solution with a slow etching rate in [5C], a taper is formed in the light i11 hole 6a of the photoconductor 6 so as to taper toward the light source.
次に〔5D〕においてフォトリソグラフィー法により共
通電極5をエツチングして光通過孔10を形成し、更に
、〔5E〕においては透明電極7及び引出し電極8をエ
ツチングして受光部を形成して光電変換素子とした。Next, in [5D], the common electrode 5 is etched using a photolithography method to form a light passage hole 10, and further, in [5E], the transparent electrode 7 and the extraction electrode 8 are etched to form a light receiving part, and a photoconductor is formed. It was used as a conversion element.
かくして、得られた本発明の読取り装置は第6図となり
、第7図は第6図の要部拡大図でSiO□。The thus obtained reading device of the present invention is shown in FIG. 6, and FIG. 7 is an enlarged view of the main part of FIG. 6, showing SiO□.
5i−0−N、Si、N、等の材料を用いてプラズマC
VD法及びスパッタリング法のいずれの方法を採用して
保護層9を形成してもステソプカバリソジに対して欠損
が認められなかった。Plasma C using materials such as 5i-0-N, Si, N, etc.
No defects were observed in the stethoscope coverage even when the protective layer 9 was formed using either the VD method or the sputtering method.
また保護層9の被着面の凹凸が大幅に緩和されたため、
それに相応した保護層9の表面に現れた四部9bも顕著
に緩和されることになった。従って本発明者等が本装置
を繰り返し作動しても四部9bに汚れや埃が堆積し難く
、−且これらが堆積しても容易に除去することができた
。In addition, since the unevenness of the surface to which the protective layer 9 is adhered has been significantly reduced,
Correspondingly, the four portions 9b appearing on the surface of the protective layer 9 were also significantly relaxed. Therefore, even when the present inventors operated the present device repeatedly, dirt and dust were unlikely to accumulate on the four parts 9b, and even if they did accumulate, they could be easily removed.
以上の通り、本発明によれば、保護層の形成に伴うステ
ップカバリッジが大幅に向−トし、且つ保護層表面の汚
染が低減できたため、優れた光感度が得られてS/N比
が向上し、長期に亘って高い信転性を得た読取り装置が
(に供できた。As described above, according to the present invention, the step coverage accompanying the formation of the protective layer has been significantly improved, and contamination on the surface of the protective layer has been reduced, resulting in excellent photosensitivity and improved S/N ratio. A reading device with improved reliability and long-term reliability was created.
更に、製造歩留りの向」二及び製造工程の簡略化ができ
たため、製造コストの低減及び高効率を達成した読取り
装置の製法が提供できた。Furthermore, since the manufacturing yield has been improved and the manufacturing process has been simplified, it has been possible to provide a method for manufacturing a reading device that achieves reduced manufacturing costs and high efficiency.
尚、本発明は上記実施例に限らず、本発明の要旨を逸脱
しない範囲において改良、変更等は何ら差支えない。It should be noted that the present invention is not limited to the above-mentioned embodiments, and any improvements, changes, etc. may be made without departing from the gist of the present invention.
第1図は本発明の読取り装置の読取り系を示す概略図、
第2図は代表的読取り装置の斜視図、第3図は第2図中
切断面線X−Xがら見た従来の装置の断面図、第4図は
従来の製法を示す工程図、第5図ば本発明の製法を示
す工程図、第6図は第2図中切断面線X−Xから見た本
発明の装置の断面図、第7図は第6図に示した本発明の
読取り装置の要部拡大断面図である。
1・・・原稿 2・・・光検知部
3.3a・・・発光ダイオード
6・・・光導電体 9・・・保護層9a、9b・・
・凹部FIG. 1 is a schematic diagram showing the reading system of the reading device of the present invention;
Fig. 2 is a perspective view of a typical reading device, Fig. 3 is a sectional view of the conventional device taken along the cutting plane line X-X in Fig. 2, Fig. 4 is a process diagram showing the conventional manufacturing method, and Fig. 5 FIG. 6 is a sectional view of the apparatus of the present invention seen from the cutting plane line XX in FIG. 2, and FIG. 7 is a reading diagram of the present invention shown in FIG. 6. FIG. 2 is an enlarged cross-sectional view of the main part of the device. DESCRIPTION OF SYMBOLS 1... Original document 2... Light detection part 3.3a... Light emitting diode 6... Photoconductor 9... Protective layer 9a, 9b...
・Concavity
Claims (2)
電極を具備し、且つ該基板の第2板面側に光源を配置し
て光導電体に光通過孔を設けると共に該光通過孔を一次
元的に複数個形成し、該光源から該光通過孔を介して第
1板面側の被検知体を投光し、その反射光を光通過孔近
傍の光導電体で受光して読取り信号が得られるようにし
た読取り装置において、前記光導電体の光通過孔部に前
記光源へ向かって先細りになるようにテーパを形成した
ことを特徴とする読取り装置。(1) A common electrode, a photoconductor, and individual electrodes are provided on the first plate surface of the substrate, a light source is arranged on the second plate side of the substrate, and a light passage hole is provided in the photoconductor. A plurality of light passing holes are formed one-dimensionally, and light is emitted from the light source to the object to be detected on the first plate side through the light passing hole, and the reflected light is reflected by a photoconductor near the light passing hole. A reading device configured to receive light and obtain a reading signal, characterized in that a light passing hole portion of the photoconductor is tapered so as to taper toward the light source.
素子を具備し、且つ該基板の第2板面側に光源を配置し
て光電変換素子に光通過孔を形成し、該光源から該光通
過孔を介して第1板面側の被検知体を投光し、その反射
光を光電変換素子で受光するようにした読取り装置の製
法において、下記(A)乃至(F)工程を具備して前記
光通過孔に光源へ向かって先細りのテーパを形成するよ
うにしたことを特徴とする読取り装置の製法が提供され
る: (A)・・・基板の第1板面上に共通電気を形成する。 (B)・・・共通電極上に光導電体を形成する。 (C)・・・光通過孔を除く光導電体上に個別電極を形
成する。 (D)・・・光導電体をエッチングする。 (E)・・・共通電極をエッチングして光通過孔を形成
する。 (F)・・・エッチングにより個別電極に受光部を形成
する。(2) A plurality of photoelectric conversion elements are provided one-dimensionally on the first plate surface of the substrate, and a light source is arranged on the second plate side of the substrate to form a light passage hole in the photoelectric conversion element. , a method for manufacturing a reading device in which light is emitted from the light source to the object to be detected on the first plate surface side through the light passage hole, and the reflected light is received by a photoelectric conversion element, the following (A) to ( F) A method for manufacturing a reading device is provided, comprising the step of forming a taper in the light passage hole toward the light source: (A)... a first plate of a substrate; Form a common electricity on the surface. (B)...A photoconductor is formed on the common electrode. (C)... Individual electrodes are formed on the photoconductor excluding the light passage holes. (D) Etching the photoconductor. (E) Etching the common electrode to form a light passage hole. (F)...A light receiving portion is formed on the individual electrode by etching.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60245578A JPH0728015B2 (en) | 1985-10-31 | 1985-10-31 | Reader and its manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60245578A JPH0728015B2 (en) | 1985-10-31 | 1985-10-31 | Reader and its manufacturing method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62105469A true JPS62105469A (en) | 1987-05-15 |
JPH0728015B2 JPH0728015B2 (en) | 1995-03-29 |
Family
ID=17135809
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60245578A Expired - Lifetime JPH0728015B2 (en) | 1985-10-31 | 1985-10-31 | Reader and its manufacturing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0728015B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01192167A (en) * | 1988-01-27 | 1989-08-02 | Semiconductor Energy Lab Co Ltd | Sensor |
-
1985
- 1985-10-31 JP JP60245578A patent/JPH0728015B2/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01192167A (en) * | 1988-01-27 | 1989-08-02 | Semiconductor Energy Lab Co Ltd | Sensor |
Also Published As
Publication number | Publication date |
---|---|
JPH0728015B2 (en) | 1995-03-29 |
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