JPS621017A - Heating power unit - Google Patents
Heating power unitInfo
- Publication number
- JPS621017A JPS621017A JP13889385A JP13889385A JPS621017A JP S621017 A JPS621017 A JP S621017A JP 13889385 A JP13889385 A JP 13889385A JP 13889385 A JP13889385 A JP 13889385A JP S621017 A JPS621017 A JP S621017A
- Authority
- JP
- Japan
- Prior art keywords
- loads
- thyristor
- current
- series
- load
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Recrystallisation Techniques (AREA)
- Control Of Voltage And Current In General (AREA)
- Control Of Electrical Variables (AREA)
- Control Of Resistance Heating (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は多結晶半導体素子などの負性抵抗負荷を加熱
するための加熱電源装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a heating power supply device for heating a negative resistance load such as a polycrystalline semiconductor element.
第５図は例えば特開昭５８−１４６４３５号公報に示さ
れた従来の加熱電源装置を示す回路図であり、図におい
て、１はタップ付変圧器、２，３゜４．５は変圧器１の
２次コイルの各タップに接続し念逆並列サイリスタユニ
ット、１４，１５，１６゜１７は負性抵抗負荷である多
結晶半導体負荷（以下負荷という〕、１８は電磁接触器
、１９ 、２ Ｑ。FIG. 5 is a circuit diagram showing a conventional heating power supply device disclosed in, for example, Japanese Unexamined Patent Publication No. 58-146435. 14, 15, 16, 17 is a polycrystalline semiconductor load (hereinafter referred to as load), which is a negative resistance load, 18 is an electromagnetic contactor, 19, 2 Q .
２１．２２は２次コイルに上記負荷１４〜１７をそれぞ
れ接続した高電圧平衡変圧器である。また、２３．２４
．２５．２６は逆並列サイリスタユニット３〜５と負荷
１４〜１７との間に入れた平衡変圧器である。Reference numerals 21 and 22 are high voltage balanced transformers having secondary coils connected to the loads 14 to 17, respectively. Also, 23.24
．． 25 and 26 are balanced transformers inserted between the antiparallel thyristor units 3 to 5 and the loads 14 to 17.
次に動作について説明する。Next, the operation will be explained.
多結晶半導体負荷としての負荷１４〜１７は加熱による
成長過程で抵抗値が徐に低下する負性抵抗特性を持つ。Loads 14 to 17 as polycrystalline semiconductor loads have negative resistance characteristics in which the resistance value gradually decreases during the growth process due to heating.
このため、加熱初期には抵抗値が高く、高電圧かつ小電
流の電力を必要とする。従って、電磁接触器１８および
逆並列サイリスタユニット２を先ずオンにし、高電圧平
衡変圧器１９〜２２に電圧を印加し、これにより負荷１
４〜１Ｔに高電圧、小電流の電源を供給する。Therefore, the resistance value is high in the early stage of heating, and high voltage and small current power is required. Therefore, the electromagnetic contactor 18 and the anti-parallel thyristor unit 2 are first turned on, and voltage is applied to the high voltage balancing transformers 19-22, thereby causing the load 1
Supply high voltage, small current power to 4-1T.
こうすると、負荷１４〜１７は徐々に加熱されて結晶が
成長し、これらの抵抗値が徐々に低下していく。そして
、この抵抗値の低下に従って、サイリスタユニット２を
スイッチ制御することにより、成長度合に応じた大きさ
の電流を負荷１４〜１７に供給していく。このため、負
荷電圧が徐々に低下し、力率が悪化してしまうことにな
る。In this way, the loads 14 to 17 are gradually heated, crystals grow, and their resistance values gradually decrease. Then, as the resistance value decreases, the thyristor unit 2 is switch-controlled to supply the loads 14 to 17 with a current having a magnitude corresponding to the degree of growth. Therefore, the load voltage gradually decreases and the power factor deteriorates.
そこで、この力率の低下を改善するため、電磁接触器１
８および逆並列サイリスタユニット２をオフにし、逆並
列サイリスタユニット３〜５ｔ−順次オフからオンに切
換えていく。これにより、平衡変圧器２３〜２６を介し
て負荷１４〜１７に電流バランスをとりながら低電圧が
供給され、力率が改善される。このようにして、負荷が
加熱成長されるにしたがい力率が悪化していくのを、逆
並列サイリスタユニット２〜５を低電圧側に順次切換え
ていくことによって改善し、最終的に負荷１４〜１７に
大電流が流れるまで結晶を成長させる。Therefore, in order to improve this decrease in power factor, the electromagnetic contactor 1
8 and the anti-parallel thyristor unit 2 are turned off, and the anti-parallel thyristor units 3 to 5t are sequentially switched from off to on. Thereby, a low voltage is supplied to the loads 14 to 17 via the balancing transformers 23 to 26 while maintaining current balance, and the power factor is improved. In this way, the deterioration of the power factor as the load heats up is improved by sequentially switching the anti-parallel thyristor units 2 to 5 to the low voltage side, and finally the loads 14 to 5 are sequentially switched to the low voltage side. The crystal is grown until a large current flows through 17.
従来の加熱電源装置は以上の様に構成されているので、
高圧タップでは小電流でよいが、低圧タップになると大
電流が必要となるため、タップ付変圧器は特殊なものと
なること、高電圧平衡変圧器１９〜２２や平衡変圧器２
３〜２６などの変圧器が負荷１４〜１７の数に応じて必
要となり、大形で重量が重くなるほか、運搬、設置など
が行いにくいこと、交流により通電するため線路と負荷
のインダクタンスおよびキャパシタンスの影響により通
電条件が変わり、負荷の加熱制御が高精度に行えないこ
となどの問題点があった。Since the conventional heating power supply device is configured as described above,
High-voltage taps require only a small current, but low-voltage taps require large currents, so tapped transformers are special, and high-voltage balanced transformers 19 to 22 and balanced transformers 2
Transformers such as 3 to 26 are required depending on the number of loads 14 to 17, which is large and heavy, and is difficult to transport and install.Since the transformer is energized by alternating current, the inductance and capacitance of the line and load are high. There were problems such as the fact that the energization conditions changed due to the influence of the current, making it impossible to control the heating of the load with high precision.
この発明は上記のような問題点を解消する為になされた
もので、タップ付変圧器１．高電圧平衡変圧器１９〜２
２．平衡変圧器２３〜２６などを使用せず、小形、軽量
な負荷切替スイッチを使用することによって、力率を改
善でき、しかも直流通電ができる加熱電源装置を得るこ
とを目的とする。This invention was made to solve the above-mentioned problems, and includes a tap transformer 1. High voltage balanced transformer 19-2
2. To obtain a heating power supply device which can improve the power factor and can conduct direct current by using a small and lightweight load changeover switch without using balance transformers 23 to 26 or the like.
ｃ問題点を解決するための手段〕
この発明にかかる加熱電源装置は、電源変圧器に複数の
サイリスタ整流器を接続し、これらの各サイリスタ整流
器のそれぞれに負性抵抗負荷を接続し、上記各サイリス
タ整流器と各負性抵抗９荷とを結ぶ回路中に負荷切換用
半導体スイッチを設けて、上記サイリスタ整流器のｉｔ
ｅは複数に対して上記各負性抵抗負荷を直列または並列
あるいは直並列に切換接続できるような構成としたもの
である。Means for Solving Problem c] The heating power supply device according to the present invention connects a plurality of thyristor rectifiers to a power transformer, connects a negative resistance load to each of these thyristor rectifiers, and A semiconductor switch for load switching is provided in the circuit connecting the rectifier and each of the nine negative resistors, and the IT of the thyristor rectifier is
e is configured such that a plurality of the above negative resistance loads can be connected in series, in parallel, or in series and parallel.
負荷切換用半導体スイッチは、各サイリスタ整流器に接
続した負荷を、直列ま几は並列あるいは直並列接続する
ように切換接続することができるので、通電加熱による
負荷抵抗値の低下に応じて、負荷の直列接続数を増加さ
せ、直流出力電圧の上昇を図・ることにより、力率改善
しながら高圧小電流から低圧大電流までの電力を負性抵
抗負荷に効率良く供給するように作用する。The load switching semiconductor switch can connect the loads connected to each thyristor rectifier in series, in parallel, or in series and parallel. By increasing the number of series connections and increasing the DC output voltage, power from high voltage and small current to low voltage and large current can be efficiently supplied to negative resistance loads while improving the power factor.
以下、この発明の一実施例を図について説明する。第１
図に２いて、１は４巻線変圧器、２，３゜４．５は４巻
線変圧器１の２次コイルに接続したサイリスタ整流器、
１４，１５，１６．１７はサイリスタ整流器２〜５のそ
れぞれに接続した負性抵抗負荷、６，７，８，９，１０
，１１．１２゜１３は上記サイリスタ整流器２〜５と負
性抵抗負荷１４〜１７とを結ぶ回路（線路）中に接続し
た半導体スイッチとしてのサイリスタスイッチである。An embodiment of the present invention will be described below with reference to the drawings. 1st
In the figure 2, 1 is a 4-winding transformer, 2,3°4.5 is a thyristor rectifier connected to the secondary coil of the 4-winding transformer 1,
14, 15, 16, 17 are negative resistance loads connected to each of thyristor rectifiers 2 to 5, 6, 7, 8, 9, 10
, 11.12.degree. 13 is a thyristor switch as a semiconductor switch connected in a circuit (line) connecting the thyristor rectifiers 2 to 5 and negative resistance loads 14 to 17.
次に動作を第２図、第３図および第４図について説明す
る。なお、同図に２いて、破線は電流方向を示し、サイ
リスタのうち黒塗りしたものは通電状態を、白く抜いた
ものは非通電状態を示す。Next, the operation will be explained with reference to FIGS. 2, 3, and 4. In addition, in 2 of the same figure, the broken line indicates the direction of current, and among the thyristors, those shaded in black indicate the energized state, and those shaded in white indicate the non-energized state.
１７！（、負荷１４〜１１は負性抵抗特性をもつため１
通電初期には高圧小電流が必要となり、Ｊｔ終通電時に
は低圧大電流が必要となる。17! (Since loads 14 to 11 have negative resistance characteristics, 1
A high voltage and small current are required at the initial stage of energization, and a low voltage and large current are required at the end of Jt energization.
よって、通電初期時は負荷を並列に、最終時には直列に
接続すれば、変圧器１より見た負荷はほぼ一定となる。Therefore, if the loads are connected in parallel at the initial stage of energization and in series at the final stage, the load seen from the transformer 1 will be approximately constant.
まず１通電初期時においてはサイリスタスイッチ７．１
１．１２ をオンにすると、サイリスタ整流器２，３
，４．５が直流電流を出力し、第２図の破線が示す通電
ループで、負荷１４〜１Ｔに高電圧小電流を通電する。First, at the initial stage of energization, the thyristor switch 7.1
1.12 When turned on, thyristor rectifiers 2 and 3
, 4.5 output a direct current, and a high voltage and small current are passed through the loads 14 to 1T in the current supply loop indicated by the broken line in FIG.
このとき負荷１４〜１７はサイリスタスイッチ７．１１
．１２を介して各サイリスタ整流器２〜５にそれぞれ独
自に接続されている。負荷１４〜１１の結晶が成長し。At this time, loads 14 to 17 are thyristor switches 7.11
．． 12 to each of the thyristor rectifiers 2 to 5 independently. Crystals with loads 14 to 11 grew.
抵抗が下がるに従い、サイリスタ整流器２〜５が図示し
ない電流制御回路により電流を調整し、負荷に見合った
電流を通電してゆくが、直流電圧が下がるため力率が悪
化していく。そこで力率がある値になったところで中期
通電に移る。中期通電では、サイリスタスイッチ８，１
１．１３をオンにする。するとサイリスタ整流器２，４
が直流電流を出力し、第３図の破線が示す通電ループで
、負荷１４〜１７に電流を通電する。このとき、負荷１
４．１５と負荷１６．１７が各１のサイリスタ整流器２
と４にそれぞれ直列に接続され、これらの２つの直列接
続負荷が並列に接続されるのでサイリスタ整流器２，４
の直流出力電圧が初期通電終了時の２倍となり、力率が
改善される。こうして５さらに負荷１４〜１７の結晶が
成長するに従い、初期通電の場合と同様にサイリスタ整
流器２．４が図示しない電流制御回路により電流を調整
し、直流電圧が下がるため力率が悪化していく。As the resistance decreases, the thyristor rectifiers 2 to 5 adjust the current by a current control circuit (not shown) to supply a current suitable for the load, but as the DC voltage decreases, the power factor deteriorates. When the power factor reaches a certain value, medium-term energization is started. During medium-term energization, thyristor switches 8 and 1
Turn on 1.13. Then thyristor rectifiers 2 and 4
outputs a direct current, and current is passed through the loads 14 to 17 in the current loop indicated by the broken line in FIG. At this time, load 1
Thyristor rectifier 2 with one each of 4.15 and load 16.17
and 4 are connected in series, respectively, and these two series connected loads are connected in parallel, so the thyristor rectifiers 2 and 4
The DC output voltage becomes twice that at the end of initial energization, and the power factor is improved. In this way, as the crystals of the loads 14 to 17 further grow, the thyristor rectifier 2.4 adjusts the current by a current control circuit (not shown) as in the case of initial energization, and the DC voltage decreases, causing the power factor to deteriorate. .
そこで力率がある値になったところで最終通電に移る。When the power factor reaches a certain value, final energization is started.
最終通電では、サイリスタスイッチ６．９゜１０．１３
をオンにする。するとサイリスタ整流器２，４が直流電
流を出力し、第４図の破線が示す通電ループで、負荷１
４〜１７に電流を通電する。このとき、負荷１４〜１７
はすべて直列に接続されるのでサイリスタ整流器２，４
の直流出力電圧が中期通電終了時の２倍となり、力率が
改善される。ｆ念、サイリスタ整流器２と４が並列運転
されるので、中期通電時の２倍の電流が出力できる。At final energization, thyristor switch 6.9°10.13
Turn on. Then, the thyristor rectifiers 2 and 4 output DC current, and in the current carrying loop indicated by the broken line in Fig. 4, the load 1
A current is applied to the terminals 4 to 17. At this time, loads 14 to 17
are all connected in series, so thyristor rectifiers 2 and 4
The DC output voltage becomes twice that at the end of the mid-term energization, and the power factor is improved. As a precaution, since thyristor rectifiers 2 and 4 are operated in parallel, it is possible to output twice as much current as during medium-term energization.
この様に、３段階の通電パターンを作り、力率を改善し
ながら高電圧小電流より低電圧大電流を発生し、多結晶
半導体を加熱成長させることができる。また、通電パタ
ーンの切換えは、サイリスタスイッチ６〜１３とサイリ
スタ整流器２〜５の選択的切換動作によって行なわれる
ので、切換えスピードが早く、この切換えに時間が長く
かかり負荷が冷えてしまうなどということがないほか。In this way, a three-stage current conduction pattern is created, and a low voltage and large current can be generated rather than a high voltage and small current while improving the power factor, and a polycrystalline semiconductor can be heated and grown. In addition, since the switching of the energization pattern is performed by selective switching operations of the thyristor switches 6 to 13 and the thyristor rectifiers 2 to 5, the switching speed is fast and there is no possibility that the switching will take a long time and cause the load to cool down. There is nothing else.
電圧および電流調整にサイリスタを使用しているため、
小形、軽量、メンテナンスフリーである。Since thyristors are used for voltage and current regulation,
It is small, lightweight, and maintenance-free.
４巻線変圧器１を使用しているので省スペースの効果が
大である。Since the 4-winding transformer 1 is used, the space saving effect is significant.
なお、上記実施例では、４巻線変圧器を使用する場合に
ついて説明したが、二巻緑変圧器を３台使用し几り、三
巻線変圧器１台と二巻緑変圧器を１台使用したりしても
よく、上記実施例と同様の効果を奏する。In the above embodiment, a case was explained in which a four-winding transformer was used, but three two-winding green transformers were used, one three-winding transformer and one two-winding green transformer. The same effect as in the above embodiment can be obtained.
以上のように、この発明によれば、複数のサイリスタ整
流器訃よび半導体スイッチの選択的動作によって、上記
各サイリスタ整流器に接続し念それぞれ食性抵抗負荷を
直列または並列あるいは直並列のいずれかに切換え接続
するように構成したので、上記負荷の加熱に伴って簡単
な構成にて直流電圧を高く設定でき、力率改善ができる
ほか、特殊なタップ付変圧器重量の平衡変圧器を用いる
ことなく、小形、軽量、および占有空間が小さい加熱電
源装置を安価に得ることができる。また。As described above, according to the present invention, by selectively operating a plurality of thyristor rectifiers and a semiconductor switch, each of the thyristor rectifiers is connected to the thyristor rectifier, and the resistive load is selectively connected in series, parallel, or series-parallel. As the load heats up, the DC voltage can be set high with a simple configuration and the power factor can be improved. A heating power supply device that is lightweight and occupies a small space can be obtained at low cost. Also.
負荷にＩＩ流電力を供給でき、線路や負荷のインダクタ
ンスやキャパシタンスによる影響を受けずに、高精度制
御可能な加熱電源装置を得ることができる効果がある。This has the effect of providing a heating power supply device that can supply II current power to the load and that can be controlled with high accuracy without being affected by the inductance or capacitance of the line or load.
第１図はこの発明の一実施例による加熱電源装置の回路
図、第２図は第１図に２いて初期通電時の通電ループを
示す回路図、第３図は同じく中期通電時の通電ループを
示す回路図、第４図は同じく最終通電時の通電ループを
示す回路図、第５図は従来の加熱電源装置の回路図であ
る。
１は電源変圧器、２，３，４．５はサイリスタ整流器、
６，７，８，９，１０，１１．１２．１３は半導体スイ
ッチ％ １４，１５，１６，１γは負性抵抗負荷。
なｐ、図中、同一符号は同一または相当部分を示す。
特許出願人 三菱電機株式会社
（外２名）−
第１図
１：４巻線変圧器Fig. 1 is a circuit diagram of a heating power supply device according to an embodiment of the present invention, Fig. 2 is a circuit diagram showing the energization loop during initial energization as shown in Fig. 1, and Fig. 3 is a energization loop during medium-term energization. FIG. 4 is a circuit diagram showing the energization loop at the time of final energization, and FIG. 5 is a circuit diagram of a conventional heating power supply device. 1 is a power transformer, 2, 3, 4.5 are thyristor rectifiers,
6, 7, 8, 9, 10, 11, 12, 13 are semiconductor switches % 14, 15, 16, 1γ are negative resistance loads. In the figures, the same reference numerals indicate the same or corresponding parts. Patent applicant Mitsubishi Electric Corporation (2 others) - Figure 1 1: 4-winding transformer
Claims (4)
、これらの各サイリスタ整流器のそれぞれに接続した負
性抵抗負荷と、上記各サイリスタ整流器と各負性抵抗負
荷とをそれぞれ結ぶ回路中に接続されて、上記サイリス
タ整流器の１または複数に対して上記各負性抵抗負荷を
直列または並列あるいは直並列接続する負荷切換用半導
体スイッチとを備えた加熱電源装置。(1) A plurality of thyristor rectifiers connected to a power transformer, a negative resistance load connected to each of these thyristor rectifiers, and a circuit connected to each of the thyristor rectifiers and each negative resistance load. and a load switching semiconductor switch that connects each of the negative resistance loads in series, in parallel, or in series-parallel to one or more of the thyristor rectifiers.
としたことを特徴とする特許請求の範囲第１項記載の加
熱電源装置。(2) The heating power supply device according to claim 1, wherein the load switching semiconductor switch is a thyristor switch.
る特許請求の範囲第１項記載の加熱電源装置。(3) The heating power supply device according to claim 1, wherein the power transformer is a four-winding transformer.
する特許請求の範囲第１項記載の加熱電源装置。(4) The heating power supply device according to claim 1, wherein the negative resistance load is a polycrystalline semiconductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60138893A JP2544907B2 (en) | 1985-06-27 | 1985-06-27 | Heating power supply |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60138893A JP2544907B2 (en) | 1985-06-27 | 1985-06-27 | Heating power supply |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS621017A true JPS621017A (en) | 1987-01-07 |
| JP2544907B2 JP2544907B2 (en) | 1996-10-16 |
Family
ID=15232581
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60138893A Expired - Lifetime JP2544907B2 (en) | 1985-06-27 | 1985-06-27 | Heating power supply |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2544907B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6461510A (en) * | 1987-08-27 | 1989-03-08 | Teijin Ltd | Polyester fiber having improved heat resistance |
| WO2007108096A1 (en) * | 2006-03-20 | 2007-09-27 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Heating power supply |
| US7789962B2 (en) * | 2005-03-31 | 2010-09-07 | Tokyo Electron Limited | Device and method for controlling temperature of a mounting table, a program therefor, and a processing apparatus including same |
| WO2012127686A1 (en) * | 2011-03-24 | 2012-09-27 | 東芝三菱電機産業システム株式会社 | Ground fault detection circuit |
| US8410393B2 (en) | 2010-05-24 | 2013-04-02 | Lam Research Corporation | Apparatus and method for temperature control of a semiconductor substrate support |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4934407A (en) * | 1972-08-01 | 1974-03-29 | ||
| JPS58146435A (en) * | 1982-02-24 | 1983-09-01 | Osaka Titanium Seizo Kk | Electric power source for heating of pollycrystalline semiconductor rod |
-
1985
- 1985-06-27 JP JP60138893A patent/JP2544907B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4934407A (en) * | 1972-08-01 | 1974-03-29 | ||
| JPS58146435A (en) * | 1982-02-24 | 1983-09-01 | Osaka Titanium Seizo Kk | Electric power source for heating of pollycrystalline semiconductor rod |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6461510A (en) * | 1987-08-27 | 1989-03-08 | Teijin Ltd | Polyester fiber having improved heat resistance |
| US7789962B2 (en) * | 2005-03-31 | 2010-09-07 | Tokyo Electron Limited | Device and method for controlling temperature of a mounting table, a program therefor, and a processing apparatus including same |
| US8182869B2 (en) | 2005-03-31 | 2012-05-22 | Tokyo Electron Limited | Method for controlling temperature of a mounting table |
| WO2007108096A1 (en) * | 2006-03-20 | 2007-09-27 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Heating power supply |
| US7723871B2 (en) | 2006-03-20 | 2010-05-25 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Heating power supply apparatus |
| US8410393B2 (en) | 2010-05-24 | 2013-04-02 | Lam Research Corporation | Apparatus and method for temperature control of a semiconductor substrate support |
| WO2012127686A1 (en) * | 2011-03-24 | 2012-09-27 | 東芝三菱電機産業システム株式会社 | Ground fault detection circuit |
| US9255958B2 (en) | 2011-03-24 | 2016-02-09 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Ground fault detection circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2544907B2 (en) | 1996-10-16 |
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