JPS6197830A - Exposure device - Google Patents
Exposure deviceInfo
- Publication number
- JPS6197830A JPS6197830A JP59217308A JP21730884A JPS6197830A JP S6197830 A JPS6197830 A JP S6197830A JP 59217308 A JP59217308 A JP 59217308A JP 21730884 A JP21730884 A JP 21730884A JP S6197830 A JPS6197830 A JP S6197830A
- Authority
- JP
- Japan
- Prior art keywords
- light source
- light emission
- exposure
- time
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 abstract description 6
- 230000003287 optical effect Effects 0.000 abstract description 4
- 238000001514 detection method Methods 0.000 abstract description 3
- 230000000694 effects Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 240000007320 Pinus strobus Species 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の分野ｊ
本発明は、マスクやレチクルのような原板のパターン像
を半導体ウェハのような担体に転写する露光装置に関し
、特にＩＣ，ＬＳ１．超ＬＳＩ等の半導体回路素子製造
用の投影焼付￥ＡＩとして特にマスクまたはレチクルの
一部又は全体の像をウェハ上に形成する結像光学系を使
用し、マスクまたはレチクル、ウェハを一体として又は
これ等の一方だけを該結像光学系に対して相対的に移動
させ、ウェハ上にマスクまたはレチクルの像を投影する
露光装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of the Invention] The present invention relates to an exposure apparatus for transferring a pattern image of an original plate such as a mask or a reticle to a carrier such as a semiconductor wafer, and particularly relates to an exposure apparatus for transferring a pattern image of an original plate such as a mask or a reticle to a carrier such as a semiconductor wafer. Projection printing for manufacturing semiconductor circuit elements such as VLSIs uses an imaging optical system that forms an image of a part or the whole of a mask or reticle on a wafer, and prints the mask or reticle and wafer together or together The present invention relates to an exposure apparatus that projects an image of a mask or a reticle onto a wafer by moving only one of them relative to the imaging optical system.
［発明の背景］
露光装置において、マスクまたはレチクルの像をウェハ
上に再現性良く形成するには露光エネルギーを一定に保
持する必要がある。[Background of the Invention] In an exposure apparatus, it is necessary to keep exposure energy constant in order to form a mask or reticle image on a wafer with good reproducibility.
従来は、光源の輝度を一定に保持する定輝度光源を用い
ることにより、露光エネルギのｔｉ）Ｊ’ｌ！Ｊを行な
っていた。Conventionally, by using a constant brightness light source that maintains the brightness of the light source constant, the exposure energy ti)J'l! I was doing J.
ところが、最近、より工暉度の光源としてエキシマレー
ザのようなパルス発光型の光源が用いられるようになっ
た。しかし、従来のパルス発光型光源例えばストロボ等
に対する露光エネルギ制御の方式は応答性、正確さの何
れの面においても満足できるものではなかった。However, recently, pulsed light sources such as excimer lasers have come into use as more sophisticated light sources. However, conventional exposure energy control methods for pulsed light sources such as strobes have not been satisfactory in terms of both responsiveness and accuracy.
［発明の目的〕
本発明は、上記従来例の欠点を除去し、パルス発光型の
光源を用いた場合にも感光担体に一定の露光エネルギを
与え、原板の像を再現性良く担体上に形成できるように
することを目的とする。[Object of the Invention] The present invention eliminates the drawbacks of the above-mentioned conventional examples, applies constant exposure energy to a photosensitive carrier even when a pulsed light source is used, and forms an image of an original plate on the carrier with good reproducibility. The purpose is to make it possible.
［発明の構成］
本発明は、パルス発光型光源を用いた露光装置において
、該光源の発光間隔又は発光時間又は各発光回当りの発
光強度を調節することより露光エネルギの制御を行なう
ものである。[Structure of the Invention] The present invention is an exposure apparatus using a pulsed light source, in which exposure energy is controlled by adjusting the light emission interval or light emission time of the light source, or the light emission intensity for each light emission. .
［発明の実施例コ
第１図は、本発明の１実施例に係る露光装置の構成を示
す。同図の装置は、露光光源及び各装置を制御する制御
装置７１、スイッチング機能を有するサイラトロン７２
、パルス点灯型光源であるエキシマレーザ７３、マスク
７４、投影光学系７５、ウェハ７６、位置合せ信号検出
回路１７、コンデンサＣＩ。Embodiment of the Invention FIG. 1 shows the configuration of an exposure apparatus according to an embodiment of the invention. The apparatus in the figure includes an exposure light source, a control device 71 that controls each device, and a thyratron 72 that has a switching function.
, an excimer laser 73 which is a pulse lighting type light source, a mask 74, a projection optical system 75, a wafer 76, an alignment signal detection circuit 17, and a capacitor CI.
Ｃ２、コイルし、抵抗Ｒ等を有する。C2 is coiled and has a resistance R, etc.
第１図の装置において、マスク７４とウェハ７６の位置
合せが完了すると制御装置７１によってサイラトロン７
２がオンとされ、エキシマレーザ７３はコンデンサＣ１
，Ｃ２とコイルＬの共成回路より高圧が印加されて点灯
し露光が行なわれる。この場合、制御装置７１に適切な
指令値を与えることにより、以下に述べるように露光エ
ネルギの制御が行なわれる。In the apparatus shown in FIG. 1, when the alignment of the mask 74 and the wafer 76 is completed, the control device 71 controls the thyratron 7
2 is turned on, and the excimer laser 73 is connected to the capacitor C1.
, C2 and the coil L, a high voltage is applied thereto, and the light is turned on to perform exposure. In this case, by giving an appropriate command value to the control device 71, the exposure energy is controlled as described below.
第２図は、第１図の装置における露光エネルギの制ａＢ
様を示すものである。第２図において、■は露光時間、
【は１回のパルス発光時間、ＥＯは１回のパルス発光に
おける発光強度を表す。第１図から明らかなように【及
びＥＯは高圧Ｎ＃ｉ＋ＨＶの電圧、コイルＬのインダク
タンス、Ｃ１゜Ｃ２の容量により決まる一定の値である
。従って、第２図（ａ）の場合における総露光エネルギ
は同図（ｂ）の場合におけるそれの３倍となることは明
らかである。このように、第１図の装置においては総露
光エネルギは制即装Ｗ１７１に与えられる指令に応じて
発光間隔を調部することにより任意に制御できる。Figure 2 shows the exposure energy control aB in the apparatus shown in Figure 1.
It shows the situation. In Figure 2, ■ is the exposure time,
[ represents the time of one pulse emission, and EO represents the emission intensity in one pulse emission. As is clear from FIG. 1, EO is a constant value determined by the voltage of the high voltage N#i+HV, the inductance of the coil L, and the capacitance of C1°C2. Therefore, it is clear that the total exposure energy in the case of FIG. 2(a) is three times that in the case of FIG. 2(b). As described above, in the apparatus shown in FIG. 1, the total exposure energy can be arbitrarily controlled by adjusting the emission interval in accordance with the command given to the control unit W171.
［実施例の変形例］
上記実施例においてはパルス発光の間隔を可変としたが
、本発明はこれに限らず例えば発光間隔を一定に保って
露光時間Ｔを可変としても、その効果は同一である。[Modification of Embodiment] In the above embodiment, the pulse emission interval is made variable, but the present invention is not limited to this. For example, even if the emission time T is kept constant and the exposure time T is varied, the effect is the same. be.
また、第１図における高圧電源＋ＨＶの電圧、コイルＬ
のインダクタンスコンデンサＣＩ 、 Ｃ２の容量を可
変として発光時間【又は各発光回における露光強度ＥＯ
を変化させてもその効果は同一である。Also, the voltage of the high voltage power supply +HV in Fig. 1, the coil L
By changing the capacitance of the inductance capacitors CI and C2, the light emitting time [or the exposure intensity EO in each light emitting time]
The effect is the same even if .
さらに、上記実施例において、制ｍ＋装置７１に対する
指令値をウェハ面照度に応じて調節することによりクロ
ーズトループ制御系を構成できることも明らかである。Furthermore, in the above embodiment, it is clear that a closed loop control system can be constructed by adjusting the command value for the control m+ device 71 according to the wafer surface illuminance.
［発明の効果］
以上説明したように、本発明によれば、パルス発光型の
光源を用いた場合にも露光エネルギの制御を適確に行な
うことが可能になり、原板の像を再現性良く担体上に形
成することができる。[Effects of the Invention] As explained above, according to the present invention, it is possible to accurately control the exposure energy even when a pulsed light source is used, and the image of the original plate can be reproduced with good reproducibility. It can be formed on a carrier.
第１図は本発明の１実施例に係る露光装置の構成を示す
ブロック図、そして第２図は第１図の装置における露光
エネルギの制御の様子を示す説明図である。
７１：制御装置、７２：サイラトロン、７３：エキシマ
レーザ、７４：マスク、７５：投影光、１６：ウェハ、
７７：位置合せ信号検出ＨＩｉ！、ＣＩ 、 Ｃ２：コ
ンデンサ、Ｌ：コイル、Ｒ：抵抗。FIG. 1 is a block diagram showing the configuration of an exposure apparatus according to an embodiment of the present invention, and FIG. 2 is an explanatory diagram showing how exposure energy is controlled in the apparatus shown in FIG. 71: Control device, 72: Thyratron, 73: Excimer laser, 74: Mask, 75: Projection light, 16: Wafer,
77: Alignment signal detection HIi! , CI, C2: capacitor, L: coil, R: resistor.
Claims (1)
装置であつて、光源としてパルス発光型光源を用いかつ
該光源の発光間隔または発光時間または各発光回当りの
発光強度を調節することにより露光エネルギの制御を行
なうことを特徴とする露光装置。 ２、前記光源がエキシマレーザ光源である特許請求の範
囲第１項記載の露光装置。[Scope of Claims] 1. An exposure device for transferring a pattern image on an original plate onto a carrier, which uses a pulsed light source as a light source and has a light emitting interval or a light emitting time of the light source, or a light emitting time per each light emitting time. An exposure apparatus characterized by controlling exposure energy by adjusting emission intensity. 2. The exposure apparatus according to claim 1, wherein the light source is an excimer laser light source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59217308A JPS6197830A (en) | 1984-10-18 | 1984-10-18 | Exposure device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59217308A JPS6197830A (en) | 1984-10-18 | 1984-10-18 | Exposure device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6197830A true JPS6197830A (en) | 1986-05-16 |
Family
ID=16702113
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59217308A Pending JPS6197830A (en) | 1984-10-18 | 1984-10-18 | Exposure device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6197830A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5491534A (en) * | 1993-06-29 | 1996-02-13 | Canon Kabushiki Kaisha | Exposure apparatus and microdevice manufacturing method using the same |
| US5757838A (en) * | 1995-06-05 | 1998-05-26 | Canon Kabushiki Kaisha | Output control method for excimer laser |
| US5846678A (en) * | 1994-12-22 | 1998-12-08 | Canon Kabushiki Kaisha | Exposure apparatus and device manufacturing method |
| US5892573A (en) * | 1995-09-29 | 1999-04-06 | Canon Kabushiki Kaisha | Exposure apparatus and method with multiple light receiving means |
| US5898477A (en) * | 1996-01-17 | 1999-04-27 | Canon Kabushiki Kaisha | Exposure apparatus and method of manufacturing a device using the same |
| US5949468A (en) * | 1995-07-17 | 1999-09-07 | Canon Kabushiki Kaisha | Light quantity measuring system and exposure apparatus using the same |
| US6081319A (en) * | 1994-12-28 | 2000-06-27 | Canon Kabushiki Kaisha | Illumination system and scan type exposure apparatus |
| US6204911B1 (en) | 1995-08-30 | 2001-03-20 | Canon Kabushiki Kaisha | Exposure apparatus and device manufacturing method |
-
1984
- 1984-10-18 JP JP59217308A patent/JPS6197830A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5491534A (en) * | 1993-06-29 | 1996-02-13 | Canon Kabushiki Kaisha | Exposure apparatus and microdevice manufacturing method using the same |
| US5699148A (en) * | 1993-06-29 | 1997-12-16 | Canon Kabushiki Kaisha | Exposure apparatus and microdevice manufacturing method using the same |
| US5846678A (en) * | 1994-12-22 | 1998-12-08 | Canon Kabushiki Kaisha | Exposure apparatus and device manufacturing method |
| US6081319A (en) * | 1994-12-28 | 2000-06-27 | Canon Kabushiki Kaisha | Illumination system and scan type exposure apparatus |
| US5757838A (en) * | 1995-06-05 | 1998-05-26 | Canon Kabushiki Kaisha | Output control method for excimer laser |
| US5949468A (en) * | 1995-07-17 | 1999-09-07 | Canon Kabushiki Kaisha | Light quantity measuring system and exposure apparatus using the same |
| US6204911B1 (en) | 1995-08-30 | 2001-03-20 | Canon Kabushiki Kaisha | Exposure apparatus and device manufacturing method |
| US6424405B2 (en) | 1995-08-30 | 2002-07-23 | Canon Kabushiki Kaisha | Exposure apparatus and device manufacturing method |
| US5892573A (en) * | 1995-09-29 | 1999-04-06 | Canon Kabushiki Kaisha | Exposure apparatus and method with multiple light receiving means |
| US5898477A (en) * | 1996-01-17 | 1999-04-27 | Canon Kabushiki Kaisha | Exposure apparatus and method of manufacturing a device using the same |
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