JPS6196780A - Coating method of lead chip - Google Patents
Coating method of lead chipInfo
- Publication number
- JPS6196780A JPS6196780A JP59217925A JP21792584A JPS6196780A JP S6196780 A JPS6196780 A JP S6196780A JP 59217925 A JP59217925 A JP 59217925A JP 21792584 A JP21792584 A JP 21792584A JP S6196780 A JPS6196780 A JP S6196780A
- Authority
- JP
- Japan
- Prior art keywords
- refractive index
- led chip
- light beam
- coating
- air
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F13/00—Illuminated signs; Luminous advertising
- G09F13/20—Illuminated signs; Luminous advertising with luminescent surfaces or parts
- G09F13/22—Illuminated signs; Luminous advertising with luminescent surfaces or parts electroluminescent
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
この発明は、LEDチップのコーティング方法に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method of coating an LED chip.
(従来の技術)
車両用灯具や表示装置等の光源としてLKDが用いられ
、このLEDは通常プリント基板やリードフレームにL
EDチップをボンディングすると共に、透光性の合成樹
脂等でコーティングされた構造となっている。(Prior art) LKD is used as a light source for vehicle lamps, display devices, etc., and this LED is usually mounted on a printed circuit board or lead frame.
It has a structure in which the ED chip is bonded and coated with a transparent synthetic resin or the like.
(発明が解決しようとする問題点)
上記のようにコーティングされたLEDは、LEDチッ
プやコーティングの屈折率と空気の屈折率とが大きく異
なるため、LEDチップからの光線が全反射して光の取
出し効率が低下している。コーティングを施さないで、
LEDチッゾから直接光を放射させる場合にも、LED
チップの屈折率と空気の屈折率との差によって同様の現
象が発生する。本発明は、このような従来の問題点を解
決するためになされたものである。(Problem to be Solved by the Invention) In an LED coated as described above, the refractive index of the LED chip or coating is significantly different from the refractive index of air, so the light rays from the LED chip are totally reflected and the light is The extraction efficiency is decreasing. without coating,
Even when emitting light directly from LED Chizzo, LED
A similar phenomenon occurs due to the difference between the refractive index of the chip and the refractive index of air. The present invention has been made to solve these conventional problems.
(問題点を解決するだめの手段)
その問題点の解決にあたって、本発明はLEDチップを
透光性の合成樹脂等でコーティングする方法において・
、LEDチップの屈折率と空気の屈折率との差を順次又
は連続的に変化させてコーティングすることを要旨とす
るものである。(Means for Solving the Problem) In order to solve the problem, the present invention provides a method for coating an LED chip with a transparent synthetic resin, etc.
The gist of this method is to perform coating by sequentially or continuously changing the difference between the refractive index of the LED chip and the refractive index of air.
(作 用)
上記の方法によって、LEDチップからの光線を外部に
有効に放射させ、光線の利用率を著しく向上させること
ができる。(Function) By the above method, the light beam from the LED chip can be effectively radiated to the outside, and the utilization rate of the light beam can be significantly improved.
(実施例)
以下、本発明の実施例を図面により説明すると、第1図
はLEDチッグ1を複数のコーテイング材で層状にコー
ティングし、その屈折率を順次段階的に変化させた実施
例であり、表層に行くほど屈折率が小となっている。即
ち、図示の場合は、屈折率J=1.82のゲルマニウム
系ガラス2と、屈折率n2= 1.59のスチロール樹
脂3と、屈折率n3 = 1.49のメタクリル樹脂4
との三層コーティング構造にしである。但し、noはL
EDチップ1の屈折率、nは空気の屈折率(n=1)で
ある。(Example) Hereinafter, an example of the present invention will be described with reference to the drawings. Fig. 1 shows an example in which an LED chip 1 is coated with a plurality of coating materials in layers, and the refractive index is changed in a stepwise manner. , the refractive index decreases toward the surface layer. That is, in the case shown, germanium glass 2 with a refractive index J=1.82, styrene resin 3 with a refractive index n2=1.59, and methacrylic resin 4 with a refractive index n3=1.49.
It has a three-layer coating structure. However, no is L
The refractive index of the ED chip 1, n is the refractive index of air (n=1).
第3図は、本発明の他の実施例を示すもので、この場合
コーティング5は一層構造であるが、内部から表面に行
くにつれて屈折率が小となるように連続的に変化させた
ものであり、光ファイバーの製造と同じ方法で形成する
ことができる。FIG. 3 shows another embodiment of the present invention, in which the coating 5 has a single layer structure, but the refractive index is continuously changed from the inside to the surface so that it decreases. Yes, and can be formed using the same methods used to manufacture optical fibers.
(発明の効果)
以上説明した本発明方法によれば、LIICDチップ抄
の屈折率と空気の屈折率との差を順次段階的に又は連続
的に変化させるようにコーティングしたので、LEDチ
ップからの光線を有効に放射させることができ、光線利
用率を著しく高め、明るくしかも省エネタイプの光源を
提供することができる。(Effects of the Invention) According to the method of the present invention explained above, since the coating is applied so that the difference between the refractive index of the LIICD chip and the refractive index of air is changed stepwise or continuously, It is possible to emit light rays effectively, significantly increasing the light utilization efficiency, and providing a bright and energy-saving light source.
第1図は、本発明の実施例を示す説明図、第2図は、そ
の屈折率の段階的変化を示すグラフ図、第3図は、本発
明の池の実施例を示す説明図、第4図は、その屈折率の
連続的変化を示すグラフ図である。
1・・・・・・LEDチップ、
2・・・・・・ゲルマニウム系ガラス、3・・・・・・
スチロール樹脂、4・・・・・・メタクリル樹脂、5・
・・・・・コーティング。
特許出願人 スタンレー電気株式会社屈折率
屈折率FIG. 1 is an explanatory diagram showing an embodiment of the present invention, FIG. 2 is a graph diagram showing a stepwise change in the refractive index, and FIG. 3 is an explanatory diagram showing an embodiment of a pond according to the present invention. FIG. 4 is a graph showing continuous changes in the refractive index. 1...LED chip, 2...Germanium glass, 3...
Styrene resin, 4...methacrylic resin, 5.
·····coating. Patent applicant: Stanley Electric Co., Ltd. Refractive Index
Claims (1)
る方法において、LEDチップの屈折率と空気の屈折率
との差を順次又は連続的に変化させてコーティングする
ことを特徴とするLEDチツプのコーティング方法。A method of coating an LED chip with a light-transmitting synthetic resin, etc., characterized in that the coating is performed by sequentially or continuously changing the difference between the refractive index of the LED chip and the refractive index of air. .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59217925A JPS6196780A (en) | 1984-10-17 | 1984-10-17 | Coating method of lead chip |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59217925A JPS6196780A (en) | 1984-10-17 | 1984-10-17 | Coating method of lead chip |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6196780A true JPS6196780A (en) | 1986-05-15 |
JPH0422352B2 JPH0422352B2 (en) | 1992-04-16 |
Family
ID=16711873
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59217925A Granted JPS6196780A (en) | 1984-10-17 | 1984-10-17 | Coating method of lead chip |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6196780A (en) |
Cited By (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6331557U (en) * | 1986-08-14 | 1988-03-01 | ||
JPH03222375A (en) * | 1990-01-26 | 1991-10-01 | Sharp Corp | Light emitting diode array |
JPH0463162U (en) * | 1990-10-02 | 1992-05-29 | ||
EP0563991A2 (en) * | 1992-04-03 | 1993-10-06 | Eastman Kodak Company | Light-emitting apparatus |
DE19631736A1 (en) * | 1996-08-06 | 1998-02-12 | Stm Sensor Technologie Muenche | Method and device for manufacturing lenses of micro-optical systems and light transmitter / light receiver system |
JP2000150965A (en) * | 1998-11-11 | 2000-05-30 | Matsushita Electronics Industry Corp | Semiconductor light emitting device |
JP2003017756A (en) * | 2001-06-28 | 2003-01-17 | Toyoda Gosei Co Ltd | Light emitting diode |
KR20030033273A (en) * | 2001-10-19 | 2003-05-01 | (주) 나노옵토테크놀러지 | Chip type l.d.m |
JP2003324215A (en) * | 2002-04-30 | 2003-11-14 | Toyoda Gosei Co Ltd | Light emitting diode lamp |
WO2003069685A3 (en) * | 2002-02-14 | 2004-07-01 | Enfis Ltd | A light system |
WO2004082036A1 (en) * | 2003-03-10 | 2004-09-23 | Toyoda Gosei Co., Ltd. | Solid element device and method for manufacture thereof |
JP2005251875A (en) * | 2004-03-02 | 2005-09-15 | Toshiba Corp | Semiconductor light emitting device |
EP1538681A3 (en) * | 2003-12-04 | 2005-09-21 | Nitto Denko Corporation | Process for producing optical semiconductor device |
EP1580818A1 (en) * | 2004-03-10 | 2005-09-28 | Nitto Denko Corporation | Process for producing optical semiconductor device |
JP2005277127A (en) * | 2004-03-25 | 2005-10-06 | Stanley Electric Co Ltd | Light-emitting device |
EP1585179A1 (en) * | 2004-04-05 | 2005-10-12 | Nitto Denko Corporation | Sheet for optical-semiconductor element encapsulation and process for producing optical semiconductor device using the sheet |
EP1475846A3 (en) * | 2003-05-06 | 2006-03-01 | Seiko Epson Corporation | Light emitting diode based light source with cooling liquid arrangement, and projection-type display apparatus |
JP2006140362A (en) * | 2004-11-15 | 2006-06-01 | Nitto Denko Corp | Optical semiconductor device sealing sheet and optical semiconductor device manufacturing method using the same |
JPWO2004082036A1 (en) * | 2003-03-10 | 2006-06-15 | 豊田合成株式会社 | Solid element device and manufacturing method thereof |
JP2006518111A (en) * | 2003-02-14 | 2006-08-03 | クリー インコーポレイテッド | Light emitting device incorporating a light emitting material |
JP2007516601A (en) * | 2003-09-08 | 2007-06-21 | ナノクリスタル・ライティング・コーポレーション | Efficient light packaging for LED lamps using high refractive index capsule materials |
US7304425B2 (en) * | 2004-10-29 | 2007-12-04 | 3M Innovative Properties Company | High brightness LED package with compound optical element(s) |
WO2007139894A2 (en) | 2006-05-26 | 2007-12-06 | Cree Led Lighting Solutions, Inc. | Solid state light emitting device and method of making same |
US7330319B2 (en) | 2004-10-29 | 2008-02-12 | 3M Innovative Properties Company | High brightness LED package with multiple optical elements |
WO2008026699A1 (en) * | 2006-08-30 | 2008-03-06 | Kyocera Corporation | Light-emitting device |
JP2008085361A (en) * | 2003-03-10 | 2008-04-10 | Toyoda Gosei Co Ltd | Solid element device |
JP2008227502A (en) * | 2007-03-13 | 2008-09-25 | Cree Inc | Graded dielectric layer |
JP2008270791A (en) * | 2007-03-28 | 2008-11-06 | Kyocera Corp | Light-emitting device and method of manufacturing the same |
US7497597B2 (en) | 2004-01-19 | 2009-03-03 | Toyoda Gosei Co., Ltd. | Light emitting apparatus |
JP2009543321A (en) * | 2006-07-06 | 2009-12-03 | ティーアイアール テクノロジー エルピー | Lighting device package |
US7795625B2 (en) | 2006-01-16 | 2010-09-14 | Panasonic Corporation | Semiconductor light-emitting device |
CN102163682A (en) * | 2010-01-28 | 2011-08-24 | Lg伊诺特有限公司 | Light emitting device package |
JP2011187929A (en) * | 2010-02-09 | 2011-09-22 | Sony Corp | Light emitting device and manufacturing method thereof |
JP2011249856A (en) * | 2011-09-14 | 2011-12-08 | Toshiba Corp | Semiconductor light-emitting device |
JP4868427B2 (en) * | 2008-11-13 | 2012-02-01 | 国立大学法人名古屋大学 | Semiconductor light emitting device |
JP2013225692A (en) * | 2005-03-14 | 2013-10-31 | Philips Lumileds Lightng Co Llc | Wavelength-converted semiconductor light emitting device |
KR20140074709A (en) * | 2012-12-10 | 2014-06-18 | 삼성디스플레이 주식회사 | Light emitting diode package and manufacturing method thereof |
US9583683B2 (en) | 2000-09-12 | 2017-02-28 | Lumileds Llc | Light emitting devices with optical elements and bonding layers |
US9601672B2 (en) | 2004-10-29 | 2017-03-21 | 3M Innovative Properties Company | High brightness LED package |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5113589A (en) * | 1974-07-25 | 1976-02-03 | Tokyo Shibaura Electric Co | |
JPS57164585A (en) * | 1981-04-02 | 1982-10-09 | Toshiba Corp | Photosemiconductor device |
-
1984
- 1984-10-17 JP JP59217925A patent/JPS6196780A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5113589A (en) * | 1974-07-25 | 1976-02-03 | Tokyo Shibaura Electric Co | |
JPS57164585A (en) * | 1981-04-02 | 1982-10-09 | Toshiba Corp | Photosemiconductor device |
Cited By (54)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6331557U (en) * | 1986-08-14 | 1988-03-01 | ||
JPH03222375A (en) * | 1990-01-26 | 1991-10-01 | Sharp Corp | Light emitting diode array |
JPH0463162U (en) * | 1990-10-02 | 1992-05-29 | ||
EP0563991A2 (en) * | 1992-04-03 | 1993-10-06 | Eastman Kodak Company | Light-emitting apparatus |
EP0563991A3 (en) * | 1992-04-03 | 1993-11-10 | Eastman Kodak Co | Light-emitting apparatus |
DE19631736A1 (en) * | 1996-08-06 | 1998-02-12 | Stm Sensor Technologie Muenche | Method and device for manufacturing lenses of micro-optical systems and light transmitter / light receiver system |
US5945041A (en) * | 1996-08-06 | 1999-08-31 | Stm Sensor Technologie Munchen Gmbh | Method and device for producing lenses of microoptical systems and optical emitter/receiver system |
JP2000150965A (en) * | 1998-11-11 | 2000-05-30 | Matsushita Electronics Industry Corp | Semiconductor light emitting device |
US10312422B2 (en) | 2000-09-12 | 2019-06-04 | Lumileds Llc | Light emitting devices with optical elements and bonding layers |
US9583683B2 (en) | 2000-09-12 | 2017-02-28 | Lumileds Llc | Light emitting devices with optical elements and bonding layers |
JP2003017756A (en) * | 2001-06-28 | 2003-01-17 | Toyoda Gosei Co Ltd | Light emitting diode |
KR20030033273A (en) * | 2001-10-19 | 2003-05-01 | (주) 나노옵토테크놀러지 | Chip type l.d.m |
WO2003069685A3 (en) * | 2002-02-14 | 2004-07-01 | Enfis Ltd | A light system |
JP2003324215A (en) * | 2002-04-30 | 2003-11-14 | Toyoda Gosei Co Ltd | Light emitting diode lamp |
JP4791351B2 (en) * | 2003-02-14 | 2011-10-12 | クリー インコーポレイテッド | Light emitting device incorporating a light emitting material |
JP2006518111A (en) * | 2003-02-14 | 2006-08-03 | クリー インコーポレイテッド | Light emitting device incorporating a light emitting material |
US8154047B2 (en) | 2003-03-10 | 2012-04-10 | Toyoda Gosei Co., Ltd. | Solid element device and method for manufacturing the same |
JP2008085361A (en) * | 2003-03-10 | 2008-04-10 | Toyoda Gosei Co Ltd | Solid element device |
US7824937B2 (en) | 2003-03-10 | 2010-11-02 | Toyoda Gosei Co., Ltd. | Solid element device and method for manufacturing the same |
JP4637160B2 (en) * | 2003-03-10 | 2011-02-23 | 豊田合成株式会社 | Method for manufacturing solid element device |
JPWO2004082036A1 (en) * | 2003-03-10 | 2006-06-15 | 豊田合成株式会社 | Solid element device and manufacturing method thereof |
WO2004082036A1 (en) * | 2003-03-10 | 2004-09-23 | Toyoda Gosei Co., Ltd. | Solid element device and method for manufacture thereof |
US8685766B2 (en) | 2003-03-10 | 2014-04-01 | Toyoda Gosei Co., Ltd. | Solid element device and method for manufacturing the same |
EP1475846A3 (en) * | 2003-05-06 | 2006-03-01 | Seiko Epson Corporation | Light emitting diode based light source with cooling liquid arrangement, and projection-type display apparatus |
JP2007516601A (en) * | 2003-09-08 | 2007-06-21 | ナノクリスタル・ライティング・コーポレーション | Efficient light packaging for LED lamps using high refractive index capsule materials |
EP1538681A3 (en) * | 2003-12-04 | 2005-09-21 | Nitto Denko Corporation | Process for producing optical semiconductor device |
US7497597B2 (en) | 2004-01-19 | 2009-03-03 | Toyoda Gosei Co., Ltd. | Light emitting apparatus |
JP2005251875A (en) * | 2004-03-02 | 2005-09-15 | Toshiba Corp | Semiconductor light emitting device |
EP1580818A1 (en) * | 2004-03-10 | 2005-09-28 | Nitto Denko Corporation | Process for producing optical semiconductor device |
JP2005277127A (en) * | 2004-03-25 | 2005-10-06 | Stanley Electric Co Ltd | Light-emitting device |
US7221007B2 (en) | 2004-04-05 | 2007-05-22 | Nitto Denko Corporation | Sheet for optical-semiconductor element encapsulation and process for producing optical semiconductor device using the sheet |
EP1585179A1 (en) * | 2004-04-05 | 2005-10-12 | Nitto Denko Corporation | Sheet for optical-semiconductor element encapsulation and process for producing optical semiconductor device using the sheet |
CN100418212C (en) * | 2004-04-05 | 2008-09-10 | 日东电工株式会社 | Sheet for optical-semiconductor element encapsulation and process for producing optical semiconductor device using the sheet |
US7330319B2 (en) | 2004-10-29 | 2008-02-12 | 3M Innovative Properties Company | High brightness LED package with multiple optical elements |
US9601672B2 (en) | 2004-10-29 | 2017-03-21 | 3M Innovative Properties Company | High brightness LED package |
US7304425B2 (en) * | 2004-10-29 | 2007-12-04 | 3M Innovative Properties Company | High brightness LED package with compound optical element(s) |
EP1657756A3 (en) * | 2004-11-15 | 2007-07-11 | Nitto Denko Corporation | Sheet for optical semiconductor element encapsulation and process for producing optical semiconductor device with the sheet |
JP2006140362A (en) * | 2004-11-15 | 2006-06-01 | Nitto Denko Corp | Optical semiconductor device sealing sheet and optical semiconductor device manufacturing method using the same |
JP2013225692A (en) * | 2005-03-14 | 2013-10-31 | Philips Lumileds Lightng Co Llc | Wavelength-converted semiconductor light emitting device |
US7795625B2 (en) | 2006-01-16 | 2010-09-14 | Panasonic Corporation | Semiconductor light-emitting device |
EP2033235A2 (en) * | 2006-05-26 | 2009-03-11 | Cree Led Lighting Solutions, Inc. | Solid state light emitting device and method of making same |
WO2007139894A2 (en) | 2006-05-26 | 2007-12-06 | Cree Led Lighting Solutions, Inc. | Solid state light emitting device and method of making same |
EP2033235A4 (en) * | 2006-05-26 | 2012-05-23 | Cree Inc | Solid state light emitting device and method of making same |
JP2009543321A (en) * | 2006-07-06 | 2009-12-03 | ティーアイアール テクノロジー エルピー | Lighting device package |
WO2008026699A1 (en) * | 2006-08-30 | 2008-03-06 | Kyocera Corporation | Light-emitting device |
JP2008227502A (en) * | 2007-03-13 | 2008-09-25 | Cree Inc | Graded dielectric layer |
JP2008270791A (en) * | 2007-03-28 | 2008-11-06 | Kyocera Corp | Light-emitting device and method of manufacturing the same |
US8405111B2 (en) | 2008-11-13 | 2013-03-26 | National University Corporation Nagoya University | Semiconductor light-emitting device with sealing material including a phosphor |
JP4868427B2 (en) * | 2008-11-13 | 2012-02-01 | 国立大学法人名古屋大学 | Semiconductor light emitting device |
CN102163682A (en) * | 2010-01-28 | 2011-08-24 | Lg伊诺特有限公司 | Light emitting device package |
EP2355194A3 (en) * | 2010-01-28 | 2014-05-14 | LG Innotek Co., Ltd. | Light emitting device package |
JP2011187929A (en) * | 2010-02-09 | 2011-09-22 | Sony Corp | Light emitting device and manufacturing method thereof |
JP2011249856A (en) * | 2011-09-14 | 2011-12-08 | Toshiba Corp | Semiconductor light-emitting device |
KR20140074709A (en) * | 2012-12-10 | 2014-06-18 | 삼성디스플레이 주식회사 | Light emitting diode package and manufacturing method thereof |
Also Published As
Publication number | Publication date |
---|---|
JPH0422352B2 (en) | 1992-04-16 |
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