JPS6190259U - - Google Patents
Info
- Publication number
- JPS6190259U JPS6190259U JP17436184U JP17436184U JPS6190259U JP S6190259 U JPS6190259 U JP S6190259U JP 17436184 U JP17436184 U JP 17436184U JP 17436184 U JP17436184 U JP 17436184U JP S6190259 U JPS6190259 U JP S6190259U
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- effect transistor
- gate electrode
- gaas
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 4
- 230000005669 field effect Effects 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 5
Landscapes
- Junction Field-Effect Transistors (AREA)
- Logic Circuits (AREA)
Description
第１図は本考案の１実施例を説明するための回
路図、第２図は第１図に示した回路の等価回路図
、第３図は従来の半導体装置の回路図、第４図は
第３図に示した回路の等価回路図である。
１，２，５…ダイオード、３，４…ＦＥＴ、Ｃ
ｉｎ…入力容量、１１，１２，１５…シヨツトキ
ダイオード、１３，１４，１６…MESFET。
Fig. 1 is a circuit diagram for explaining one embodiment of the present invention, Fig. 2 is an equivalent circuit diagram of the circuit shown in Fig. 1, Fig. 3 is a circuit diagram of a conventional semiconductor device, and Fig. 4 is a circuit diagram for explaining an embodiment of the present invention. 4 is an equivalent circuit diagram of the circuit shown in FIG. 3. FIG. 1, 2, 5...Diode, 3, 4...FET, C
in ...Input capacitance, 11, 12, 15...Shotki diode, 13, 14, 16...MESFET.
Claims (1)
界効果トランジスタを含む論理回路と、前記信号
入力端子と前記電界効果トランジスタのゲート電
極との間に接続された１個若しくは複数個の順方
向整流特性素子と、前記ゲート電極と接地部との
間に接続された抵抗Ｒの素子とを備えてなるGaAs
半導体装置において、 前記素子の抵抗Ｒは、前記電界効果トランジス
タの必要動作速度及び容量をそれぞれｆ，Ｃとす
るとき、 Ｒ＜１ｆ・Ｃ を満足してなることを特徴とするGaAs半導体装置
。 (2) 前記抵抗Ｒの素子がゲート電極をソース電
極に接続したデプレツシヨン型の電界効果トラン
ジスタであることを特徴とする実用新案登録請求
の範囲第１項記載のGaAs半導体装置。[Claims for Utility Model Registration] (1) A signal input terminal, a logic circuit including a field effect transistor formed on a GaAs substrate, and a logic circuit connected between the signal input terminal and the gate electrode of the field effect transistor. GaAs comprising one or more forward rectifying elements and an element having a resistance R connected between the gate electrode and the grounding part.
A GaAs semiconductor device, wherein the resistance R of the element satisfies R<1f·C, where f and C are the required operating speed and capacity of the field effect transistor, respectively. (2) The GaAs semiconductor device according to claim 1, wherein the element of the resistor R is a depletion type field effect transistor having a gate electrode connected to a source electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17436184U JPS6190259U (en) | 1984-11-19 | 1984-11-19 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17436184U JPS6190259U (en) | 1984-11-19 | 1984-11-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6190259U true JPS6190259U (en) | 1986-06-12 |
Family
ID=30731983
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17436184U Pending JPS6190259U (en) | 1984-11-19 | 1984-11-19 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6190259U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5646340A (en) * | 1979-09-22 | 1981-04-27 | Nippon Telegr & Teleph Corp <Ntt> | Logic circuit using schottky or p-n junction gate type field effect transistor |
-
1984
- 1984-11-19 JP JP17436184U patent/JPS6190259U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5646340A (en) * | 1979-09-22 | 1981-04-27 | Nippon Telegr & Teleph Corp <Ntt> | Logic circuit using schottky or p-n junction gate type field effect transistor |
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