JPS6182486A - Solid state light emitting display device - Google Patents

Solid state light emitting display device

Info

Publication number
JPS6182486A
JPS6182486A JP59204764A JP20476484A JPS6182486A JP S6182486 A JPS6182486 A JP S6182486A JP 59204764 A JP59204764 A JP 59204764A JP 20476484 A JP20476484 A JP 20476484A JP S6182486 A JPS6182486 A JP S6182486A
Authority
JP
Japan
Prior art keywords
light emitting
reflector
pellets
emitting diodes
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59204764A
Other languages
Japanese (ja)
Inventor
Hiroshi Kitamura
北邑　宏
Haruo Kozai
小材　治夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP59204764A priority Critical patent/JPS6182486A/en
Publication of JPS6182486A publication Critical patent/JPS6182486A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F13/00—Illuminated signs; Luminous advertising
    • G09F13/20—Illuminated signs; Luminous advertising with luminescent surfaces or parts
    • G09F13/22—Illuminated signs; Luminous advertising with luminescent surfaces or parts electroluminescent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements

Abstract

PURPOSE:To obtain an LED lamp capable of varying its brightness of display by integrally forming a plurality of light emitting diodes by a common light reflector and a resin lens, and varying the number of light emitting diodes. CONSTITUTION:A reflector 4 is disposed around a plurality of light emitting diode pellets 3... placed on a substrate 2, and an integrated circuit 5 formed of a controller of the light emitting diodes is placed on the substrate 2 of the back side of the reflector 4. The substrate 2, the pellets 3..., the reflector 4, the integrated circuit 5, and lead pins 6 are integrated around the resin 7. The portion for coating the pellets 3 of the resin 7 and the reflector 4 forms a resin lens 7a, and the light emitted from the pellets 3 is emitted externally in combination by the reflector 4 and the lens 7a. The number of the emitting pellets 3 is altered by varying the level of the input signal of the integrated circuit 5 to alter the brightness of the displaying the lamp 1.

Description

【発明の詳細な説明】 く技術分野〉 本発明は複数の発光ダイオードにより形成した固体発光
表示装置（以下、ＬＥＤランプという）に関する。DETAILED DESCRIPTION OF THE INVENTION Technical Field The present invention relates to a solid state light emitting display device (hereinafter referred to as an LED lamp) formed by a plurality of light emitting diodes.

〈従来技術〉 一般に、発光ダイオードは、順電流ＩＦの増加と共に輝
度（ｖが ＩＶＣＣＩＦ’〜″ の関係で増加する。また、順電圧Ｖ、と順電流ＩＦ＝は Ｉ　ｔ−ｔｆ：、　ｅｘｐ　　（Ｑ　　ＶＰ　／Ａ　Ｔ
　）の関係を有する。ただし、ｑは電子の電荷、４はボ
ルツマン定数、Ｔは絶対温度である。この関係から、順
電圧ＶＦの僅かな変化により、順電流ＩＰ及び輝度１ｖ
が急激に変化する。したがって、ＬＥＤランプの個々の
発光ダイオードの発光強度を制御してＬＥＤランプの表
示の明るさを制御することは困難である。<Prior art> In general, in a light emitting diode, the brightness (v) increases as the forward current IF increases in accordance with the relationship IVCCIF'~''.The forward voltage V and the forward current IF= are It-tf:, exp ( Q VP /A T
). However, q is the electron charge, 4 is Boltzmann's constant, and T is the absolute temperature. From this relationship, a slight change in forward voltage VF causes forward current IP and brightness 1v.
changes rapidly. Therefore, it is difficult to control the brightness of the display of the LED lamp by controlling the light emission intensity of each light emitting diode of the LED lamp.

第３図は従来から用いられているレベルメータを示して
おり、このレベルメータは、複数の発光ダイオードペレ
ット１２．　１２．−・のそれぞれが反射板１３で仕切
られ、それぞれの発光ダイオードペレット１２と反射板
１３の間に樹脂レンズ１４が充填される。そして、この
樹脂レンズ１４の上面が発光窓１４ａを形成し、各発光
ダイオードペレット１２についてこの発光窓１４ａがそ
れぞれ独立して設けられるとともに、複数の発光窓１４
ａ。FIG. 3 shows a conventionally used level meter, which consists of a plurality of light emitting diode pellets 12. 12. -. are each partitioned off by a reflecting plate 13, and a resin lens 14 is filled between each light emitting diode pellet 12 and the reflecting plate 13. The upper surface of this resin lens 14 forms a light emitting window 14a, and this light emitting window 14a is provided independently for each light emitting diode pellet 12, and a plurality of light emitting windows 14
a.

１４ａ、−・・−が帯状に配列される。このレベルメー
夕においては、入力信号のレベルに応じて、発光ダイオ
ードペレット１２の発光個数を変えることにより、光を
照射する発光窓１４ａの数を変える。14a, . . . are arranged in a band shape. In this level meter, by changing the number of light emitting diode pellets 12 in accordance with the level of the input signal, the number of light emitting windows 14a that emit light is changed.

したがって、帯状の発光の長さによって、入力信号のレ
ベルを表示することができる。Therefore, the level of the input signal can be displayed by the length of the band-shaped light emission.

このように、レベルメータは、複数の発光ダイオードペ
レット１２．１２．−・の発光個数を変えることにより
、帯状の表示の長さを変えるものであり、表示自体の明
るさを変えるものではない。In this way, the level meter includes a plurality of light emitting diode pellets 12.12. By changing the number of light-emitting lights, the length of the strip-shaped display is changed, but the brightness of the display itself is not changed.

〈発明の目的〉 本発明は上記事情に鑑みてなされたものであり、その目
的は、表示の明るさを変えることができるようにしたＬ
ＥＤランプを提供することである。<Object of the invention> The present invention has been made in view of the above circumstances, and its object is to provide an L display device that can change the brightness of the display.
An object of the present invention is to provide an ED lamp.

〈発明の構成〉 本発明においては、基板上に搭載された複数の発光ダイ
オードが光反射部材で包囲されるとともに上記複数の発
光ダイオードと上記光反射部材とが樹脂レンズで一体的
に覆われて形成された発光部と、発光する発光ダイオー
ドの数を入力信号に応じて可変として上記複数の発光ダ
イオードを制御する制御回路とを備えたことを特徴とす
る。<Configuration of the Invention> In the present invention, a plurality of light emitting diodes mounted on a substrate are surrounded by a light reflecting member, and the plurality of light emitting diodes and the light reflecting member are integrally covered with a resin lens. The present invention is characterized by comprising a light emitting section formed therein, and a control circuit that controls the plurality of light emitting diodes by making the number of light emitting diodes that emit light variable in accordance with an input signal.

〈実施例〉 以下、本発明の一実施例について説明する。<Example> An embodiment of the present invention will be described below.

第１図はＬＥＤランプの断面構成を示す。基板２上に複
数の発光ダイオードペレット３．３．−が搭載され、こ
の複数の発光ダイオードペレット３．３．・・・を包囲
して反射板４が配置され、さらに、反射板４の裏面側の
基板２上に発光ダイオードの制御回路を形成した集積回
路５が搭載される。FIG. 1 shows a cross-sectional configuration of an LED lamp. A plurality of light emitting diode pellets 3.3. on the substrate 2. - is loaded with a plurality of light emitting diode pellets 3.3. A reflector plate 4 is disposed surrounding the reflector plate 4, and an integrated circuit 5 on which a control circuit for a light emitting diode is formed is mounted on the substrate 2 on the back side of the reflector plate 4.

基板２の裏面には、リードピン６が取り付けられる。そ
して、上述の基板２．複数の発光ダイオードペレッ）３
．３．−・−０反射板４．集積回路５並びにリードピン
６が樹脂７にて包囲されて一体化される。樹脂７の発光
ダイオードペレット３，３゜−と反射板４とを共通的に
覆う部分は、樹脂レンズ７ａを形成する。集積回路５は
、発光ダイオードペレット３及び外部からの光の影響を
受けない場所に配置される。Lead pins 6 are attached to the back surface of the substrate 2. Then, the above-mentioned substrate 2. multiple light emitting diode pellets) 3
．． 3. -・-0 reflector 4. The integrated circuit 5 and lead pins 6 are surrounded by resin 7 and integrated. A portion of the resin 7 that commonly covers the light emitting diode pellets 3, 3° and the reflection plate 4 forms a resin lens 7a. The integrated circuit 5 is placed in a place where it is not affected by the light emitting diode pellet 3 and external light.

上述のＬＥＤランプ１においては、複数の発光ダイオー
ドペレット３．３．−のそれぞれの発光は、共通の反射
板４および樹脂レンズ７ａにより合成されて外部に照射
される。そして、複数の発光ダイオードペレット３．３
．−・のうちの発光する発光ダイオード３の数を変える
と、樹脂レンズ７ａから外部に照射される光の強さが変
わる。すなわち、集積回路５に与える入力信号のレベル
を変えることにより、この入力信号のレベルに応じて発
光ダイオードペレット３．３．−・の発光個数を変え、
ＬＥＤランプ１の表示の明るさを変えることができる。In the above LED lamp 1, a plurality of light emitting diode pellets 3.3. - are combined by the common reflector 4 and resin lens 7a and irradiated to the outside. and multiple light emitting diode pellets 3.3
．． - If the number of light emitting diodes 3 that emit light is changed, the intensity of light irradiated to the outside from the resin lens 7a will be changed. That is, by changing the level of the input signal applied to the integrated circuit 5, the light emitting diode pellets 3, 3, . - Change the number of light emission,
The brightness of the display of the LED lamp 1 can be changed.

第２図はＬＥＤランプ１とその周辺回路の回路構成を示
す、破線の枠内の回路がＬＥＤランプ１の回路であり、
上述の複数の発光ダイオードペレット３，３．−・によ
り形成される複数の発光ダイオードＤ１．Ｄ２．−・及
び上述の集積回路５に形成されるレベルメータ用発光ダ
イオード駆動回路１１を備える。端子８は電源端子、端
子９は接地端子、端子ｌＯは信号端子である。端子１０
に入力信号が与えられると、レベルメータ用発光ダイオ
ード駆動回路１１は、複数の発光ダイオードＤｌ。FIG. 2 shows the circuit configuration of the LED lamp 1 and its peripheral circuits. The circuit within the broken line frame is the circuit of the LED lamp 1.
The plurality of light emitting diode pellets 3, 3. - A plurality of light emitting diodes D1. D2. - and a level meter light emitting diode drive circuit 11 formed in the above-described integrated circuit 5. Terminal 8 is a power supply terminal, terminal 9 is a ground terminal, and terminal IO is a signal terminal. terminal 10
When an input signal is given to the level meter light emitting diode drive circuit 11, the level meter light emitting diode drive circuit 11 drives the plurality of light emitting diodes Dl.

Ｄ　２　、−・のうち入力信号のレベルに応じた数の発
光ダイオードを発光させる。A number of light emitting diodes among D 2 , -. are caused to emit light according to the level of the input signal.

上述の回路では、電源端子８と接地端子９の間に電源電
圧Ｖｃｃ（例えば１２ｖ）が印加され、信号端子１０に
入力信号電圧ＶＩＮ（例えばθ〜１２ｖ）が印加される
。そして、この入力信号電圧ＶＩＮの大小に応じて、発
光する発光ダイオードＤ１．Ｄ２．−・の数が増減する
。レベルメータ用発光ダイオード駆動回路１１には電流
増幅回路が内蔵されるので、入力電流としては極めて僅
かな電流（例えば２０μＡ以下）でよい。In the above-described circuit, a power supply voltage Vcc (for example, 12V) is applied between the power supply terminal 8 and the ground terminal 9, and an input signal voltage VIN (for example, θ to 12V) is applied to the signal terminal 10. Then, depending on the magnitude of this input signal voltage VIN, the light emitting diode D1. D2. The number of -・ increases or decreases. Since the level meter light emitting diode drive circuit 11 has a built-in current amplification circuit, an extremely small input current (for example, 20 μA or less) is sufficient as the input current.

〈発明の効果〉 以上説明したように、本発明においては、複数の発光ダ
イオードを共通の光反射板と樹脂レンズにより一体的に
形成したから、発光する発光ダイオードの数を変えるこ
とにより、ＬＥＤランプの表示の明るさを変えることが
でき、このＬＥＤランプを多数組み合わせて構成したイ
ンテリゼントディスプレイや屋外の大型インジケータ等
における表示の多様化が可能になる。<Effects of the Invention> As explained above, in the present invention, since a plurality of light emitting diodes are integrally formed using a common light reflecting plate and a resin lens, by changing the number of light emitting diodes that emit light, the LED lamp can be The brightness of the display can be changed, making it possible to diversify the display on intelligent displays constructed by combining a large number of LED lamps, large outdoor indicators, etc.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明の実施例を示す断面図、第２図は本発明
の実施例を示す回路図、第３図は従来例を示す断面図で
ある。 １・−ＬＥＤランプ　　２・−・基板 ３−発光ダイオードペレソト ４−反射板　　　　　５−・・・集積回路７ａ・−・樹
脂レンズFIG. 1 is a sectional view showing an embodiment of the present invention, FIG. 2 is a circuit diagram showing an embodiment of the invention, and FIG. 3 is a sectional view showing a conventional example. 1.-LED lamp 2.--Substrate 3--Light emitting diode 4-Reflection plate 5--.Integrated circuit 7a--.Resin lens

Claims (1)

【特許請求の範囲】[Claims] （１）基板上に搭載された複数の発光ダイオードが光反
射部材で包囲されるとともに上記複数の発光ダイオード
と上記光反射部材とが樹脂レンズで一体的に覆われて形
成された発光部と、発光する発光ダイオードの数を入力
信号に応じて可変として上記複数の発光ダイオードを制
御する制御回路とを備えたことを特徴とする固体発光表
示装置。(1) a light emitting section formed by surrounding a plurality of light emitting diodes mounted on a substrate with a light reflecting member and integrally covering the plurality of light emitting diodes and the light reflecting member with a resin lens; A solid-state light emitting display device comprising: a control circuit that controls the plurality of light emitting diodes by varying the number of light emitting diodes that emit light according to an input signal.
JP59204764A 1984-09-29 1984-09-29 Solid state light emitting display device Pending JPS6182486A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59204764A JPS6182486A (en) 1984-09-29 1984-09-29 Solid state light emitting display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59204764A JPS6182486A (en) 1984-09-29 1984-09-29 Solid state light emitting display device

Publications (1)

Publication Number Publication Date
JPS6182486A true JPS6182486A (en) 1986-04-26

Family

ID=16495956

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59204764A Pending JPS6182486A (en) 1984-09-29 1984-09-29 Solid state light emitting display device

Country Status (1)

Country Link
JP (1) JPS6182486A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62247834A (en) * 1986-04-18 1987-10-28 Sumitomo Chem Co Ltd Production of flaked substance
JPS62176884U (en) * 1986-04-30 1987-11-10
JPS62184586U (en) * 1986-05-15 1987-11-24
JPH01172889A (en) * 1987-12-26 1989-07-07 Takiron Co Ltd Dot matrix light emitting display body and its manufacture
JPH05113762A (en) * 1991-10-21 1993-05-07 Hiroshi Ninomiya Luminous display device
WO2001013437A1 (en) * 1999-08-12 2001-02-22 Rohm Co., Ltd. Chip semiconductor light-emitting device
EP1087447A1 (en) * 1999-03-18 2001-03-28 Rohm Co., Ltd. Light-emitting semiconductor chip
WO2002005351A1 (en) * 2000-07-12 2002-01-17 Tridonic Optoelectronics Gmbh Led light source
WO2002056390A1 (en) * 2001-01-15 2002-07-18 Osram Opto Semiconductors Gmbh Light-emitting diode and method for the production thereof
JP2003209295A (en) * 2002-01-16 2003-07-25 Sony Corp Electronic component, manufacturing method therefor and image display device using the same
WO2005067063A1 (en) * 2004-01-12 2005-07-21 Asetronics Ag Arrangement with a light emitting device on a substrate
KR100755086B1 (en) 2006-05-03 2007-09-03 삼화콘덴서공업주식회사 Package for light emitting diode
CN107195256A (en) * 2017-07-14 2017-09-22 安徽欧品光电科技有限公司 A kind of lamp box

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS48102585A (en) * 1972-04-04 1973-12-22

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS48102585A (en) * 1972-04-04 1973-12-22

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62247834A (en) * 1986-04-18 1987-10-28 Sumitomo Chem Co Ltd Production of flaked substance
JPS62176884U (en) * 1986-04-30 1987-11-10
JPS62184586U (en) * 1986-05-15 1987-11-24
JPH01172889A (en) * 1987-12-26 1989-07-07 Takiron Co Ltd Dot matrix light emitting display body and its manufacture
JPH05113762A (en) * 1991-10-21 1993-05-07 Hiroshi Ninomiya Luminous display device
EP1087447A1 (en) * 1999-03-18 2001-03-28 Rohm Co., Ltd. Light-emitting semiconductor chip
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