JPS616881A - Semiconductor temperature sensor element - Google Patents
Semiconductor temperature sensor elementInfo
- Publication number
- JPS616881A JPS616881A JP59126322A JP12632284A JPS616881A JP S616881 A JPS616881 A JP S616881A JP 59126322 A JP59126322 A JP 59126322A JP 12632284 A JP12632284 A JP 12632284A JP S616881 A JPS616881 A JP S616881A
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- type
- semiconductor
- temperature
- regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 239000012535 impurity Substances 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 23
- 239000000758 substrate Substances 0.000 description 14
- 230000000903 blocking effect Effects 0.000 description 10
- 230000003321 amplification Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Thermistors And Varistors (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は所定の温度を検出する温度センサーに関し，特
に半導体にて構成した温度センサー素子に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a temperature sensor for detecting a predetermined temperature, and more particularly to a temperature sensor element made of a semiconductor.
近年，各種センサーの開発が活発化し，温度センサーも
種々の構造のものが開発されている。In recent years, the development of various sensors has become active, and temperature sensors with various structures have been developed.
本発明の目的は，半導体にて構成した新規な構造の温度
センサー素子を提供するとＩＫある。An object of the present invention is to provide a temperature sensor element with a novel structure made of semiconductor.
本発明によれば，第１導電型の半導体層と，該半導体層
に互に離れた位置に形成された第１及び第２の電極と，
前記半導体層に前記第１及び第２の電極間の位置に形成
された，前記第１導電型とは反対の第２導電型の電気的
に浮遊せる半導体領域とを有し，前記第１及び第２の電
極間に所定の電圧を加えたとき，周囲温度が所定の温度
より低い場合は前記半導体層と前記半導体領域との接合
部分に形成される空乏層が前記第１及び第２の電極間の
導電路を遮断しておシ，前記周囲温度が前記所定の温度
以上の場合は前記空乏層による前記導電路の遮断が解か
れて前記第１及び第２の電極間に電流が流れることを特
徴とする半導体温度センサー素子が得られる。According to the present invention, a semiconductor layer of a first conductivity type, first and second electrodes formed on the semiconductor layer at positions apart from each other;
an electrically floating semiconductor region of a second conductivity type opposite to the first conductivity type formed in the semiconductor layer at a position between the first and second electrodes; When a predetermined voltage is applied between the second electrodes, if the ambient temperature is lower than a predetermined temperature, a depletion layer formed at the junction between the semiconductor layer and the semiconductor region is connected to the first and second electrodes. If the ambient temperature is equal to or higher than the predetermined temperature, the conductive path is unblocked by the depletion layer and a current flows between the first and second electrodes. A semiconductor temperature sensor element having the following characteristics is obtained.
次に本発明の実施例について図面を参照して説明する。Next, embodiments of the present invention will be described with reference to the drawings.
捷ず、第２図を参照して本発明の詳細な説明する。Without further ado, the present invention will be described in detail with reference to FIG.
第２図（４）の素子は２例えばＮ型の８１基体１０の両
端に第１及び第一−極１１及び１２が形成された半導体
抵抗である。この半導体抵抗素子は、第１及び第２の電
極】１及び１２間に電界を加えて電流を流す構造のもの
で、流れる電流量はＳｉ基体１０の比抵抗で制御される
。The element shown in FIG. 2(4) is a semiconductor resistor in which first and first electrodes 11 and 12 are formed at both ends of an N-type 81 substrate 10, for example. This semiconductor resistance element has a structure in which an electric field is applied between the first and second electrodes 1 and 12 to flow a current, and the amount of current flowing is controlled by the specific resistance of the Si substrate 10.
第２図（Ｂ）のように＋Ｓ＋基体１０に第１及び第２の
電極１１及び１２間の位置に、Ｓｉ基体１０とは反対の
導電型（即ちＰ型）の２つの８１領域、１３を。As shown in FIG. 2(B), two 81 regions 13 of the conductivity type opposite to that of the Si substrate 10 (i.e., P type) are provided on the +S+ substrate 10 at a position between the first and second electrodes 11 and 12. .
相互間に間隙が形成されるように、形成すると。When formed so that a gap is formed between each other.
第１及び第２の電極１１及び１２間を流れる電流が減少
する。Ｐ型Ｓｉ領域１３は電気的に浮遊している。上記
間隙を狭くすると、２つのＰ型頭域１３とＮ型基体１０
とで形成されるＰＮ接合部に発生する空乏層が互に重な
り合い２両電極１１及び１２間に印加する電圧が所定の
電圧値になる寸では。The current flowing between the first and second electrodes 11 and 12 is reduced. P-type Si region 13 is electrically floating. When the gap is narrowed, two P-type head areas 13 and an N-type base body 10 are formed.
When the depletion layers generated in the PN junction formed by the two electrodes overlap each other, the voltage applied between the two electrodes 11 and 12 becomes a predetermined voltage value.
電流が流れない状態が形成される。その所定の電圧値は
、Ｎ型基体１０及びＰ型頭域１３の不純物密度（比抵抗
）と上記間隙の間隔とで決定される。A state is formed in which no current flows. The predetermined voltage value is determined by the impurity density (specific resistance) of the N-type substrate 10 and the P-type head region 13 and the interval of the gap.
本発明は、第２図（Ｂ）の素子において、Ｎ型基体１０
及びＰ型頭域１３の不純物密度と上記間隙の間隔とをあ
る状態に設定して、第１及び第２の電極１１及び１２間
に印加する電圧と２本素子の周囲温度との関係を調べた
結果、電流が流れ々い電圧値が９周囲温度の上昇に従っ
て、低下してくるという性質を発見し、利用したもので
ある。The present invention provides an N-type substrate 10 in the device shown in FIG. 2(B).
The impurity density of the P-type head region 13 and the interval of the gap are set to a certain state, and the relationship between the voltage applied between the first and second electrodes 11 and 12 and the ambient temperature of the two elements is investigated. As a result, they discovered and utilized the property that current flows slowly and the voltage value decreases as the ambient temperature rises.
即ち９本発明による半導体温度センサー素子は。That is, the semiconductor temperature sensor element according to the present invention is as follows.
第１及び第２の電極１１及び１２間に所定の電圧を加え
たとき１周囲温度が所定の温度より低い場合はＮ型Ｓｉ
基板１０と２つのＰ型領域］３とのＰＮ接合部に形成さ
れる空乏層が第１及び第２の電極１１及び１２間の導電
路を遮断しており５周囲温度が前記所定の温度以上の場
合は前記空乏層による前記導電路の遮断が解かれて第１
及び第２の電極１１及び１２間に電流が流れることを特
徴とする。When a predetermined voltage is applied between the first and second electrodes 11 and 12, if the ambient temperature is lower than the predetermined temperature, the N-type Si
The depletion layer formed at the PN junction between the substrate 10 and the two P-type regions 3 blocks the conductive path between the first and second electrodes 11 and 12, and the ambient temperature 5 is higher than the predetermined temperature. In the case of , the conduction path is unblocked by the depletion layer and the first
A current flows between the second electrodes 11 and 12.
本発明による半導体温度センサー素子は、構造的に縦型
電界効果トランジスタ（Ｖ−ＦＥＴ ）に似ているが１
本発明による半導体温度センサー素子は。Although the semiconductor temperature sensor element according to the present invention is structurally similar to a vertical field effect transistor (V-FET),
A semiconductor temperature sensor element according to the present invention.
基板１０とは反対の導電型の領域１３が電気的に浮遊さ
れている２電極の抵抗体（受動素子）であシ・増幅能力
をもたない。つまシ、トランジスタではない。The region 13 of the conductivity type opposite to that of the substrate 10 is a two-electrode resistor (passive element) in which the region 13 is electrically floating, and has no amplification ability. Sorry, it's not a transistor.
これに対して、 Ｖ−ＦＥＴは３電極能動素子であシ。On the other hand, V-FET is a 3-electrode active element.
もちろん増幅能力をもっており、第３の電極（ダート電
極）は浮遊しておらず、制御の為に電圧が印加される。Of course, it has an amplification ability, the third electrode (dart electrode) is not floating, and a voltage is applied for control.
なお１本発明による半導体温度センサー素子は。Note that the semiconductor temperature sensor element according to the present invention is as follows.
第３図のように、８１基板１０の両面に第１及び第２の
電極１１及び１２を形成すれば、８１基板１゜の厚み方
向縦に電流が流れる抵抗体となる。また。As shown in FIG. 3, if the first and second electrodes 11 and 12 are formed on both sides of the 81 substrate 10, a resistor is formed in which a current flows vertically in the thickness direction of the 81 substrate 1°. Also.
第４図のように、Ｎ型Ｓｉ層１ｏの片側の面に、第１及
び第２の電極１１及び１２を作れば、Ｎ型８１層１０に
横方向（Ｓｉ層１０の径方向）に電流が流れる抵抗体と
なる。第４図において、１４はＰ型Ｓｔ基板である。As shown in FIG. 4, if the first and second electrodes 11 and 12 are formed on one side of the N-type Si layer 1o, a current can be generated in the N-type 81 layer 10 in the lateral direction (in the radial direction of the Si layer 10). becomes a resistor through which the current flows. In FIG. 4, 14 is a P-type St substrate.
次に本発明の実施例について説明する。Next, examples of the present invention will be described.
第１図及び第５図はいずれも本発明の実施例による半導
体温度センサー素子を示すものである。1 and 5 both show semiconductor temperature sensor elements according to embodiments of the present invention.
第５図はＰ＋層３を埋込んだものであり、Ｐ＋層３とも
のであり、第５図の場合と同様Ｐ＋層３とＰ＋バンド層
３′とは外部でつながっている。なお、第１図及び第５
図において、工はＮ＋Ｓｉ基板、２はＮ一層。FIG. 5 shows a structure in which the P+ layer 3 is buried, and the P+ layer 3 and the P+ layer 3 are connected to each other externally, as in the case of FIG. 5. In addition, Figures 1 and 5
In the figure, 1 is an N+Si substrate, and 2 is an N single layer.
４はＮ層である。4 is the N layer.
第１図及び第５図において＋ Ｎ” Ｓ＋基板１が第２
図（Ｂ）の第１の電極１１に対応し、Ｎ＋層４が第２図
（Ｂ）の第２の電極１２に対応し、Ｐ＋層３及びＰ＋
、ｅノド層３′が第２図（Ｂ）のＰ型頭域１３に対応す
る。In Figures 1 and 5, +N''S+ substrate 1 is the second
The N+ layer 4 corresponds to the first electrode 11 in FIG. 2(B), the P+ layer 3 and the P+
, e throat layer 3' corresponds to the P-type head region 13 in FIG. 2(B).
第１図及び第５図には導電路Ｗを半導体基板の厚み方向
に形成した構造すなわち縦型の例を示したが、第４図に
従って、導電路Ｗを基板の径方向に形成した構造すなわ
ち横型も可能である。要は。Although FIGS. 1 and 5 show a structure in which the conductive path W is formed in the thickness direction of the semiconductor substrate, that is, a vertical type example, according to FIG. Horizontal type is also possible. The point is.
導電路の幅ＷとＮ一層２の不純物密度との関係を−くす
る必要も無く任意に設計して良い。There is no need to compromise the relationship between the width W of the conductive path and the impurity density of the N layer 2, and it may be designed as desired.
第６図は本発明の一実施例である第１図の構造の素子に
於て、Ｎ一層２の不純物密度Ｎ−を２×１０１１０ｌ５
’として一定とした場合に、導電路の幅Ｗを適当に変化
させた時の室温（２５℃）下での素子特性を示す。第１
の電極１と第２の電極４との間に印加される電圧を横軸
に、第１及び第２の電極１及び４間に導電路を通って流
れる電流を縦軸にゾロノドしたものである。導電路幅Ｗ
が１７μｍの場合はぼ４００Ｖまでは電流は流れず（電
気抵抗無限大）。FIG. 6 shows an example of the present invention in which the impurity density N- of the N layer 2 is set to 2×10110l5 in the device having the structure shown in FIG.
The device characteristics at room temperature (25° C.) are shown when the width W of the conductive path is appropriately changed when the width W is kept constant as . 1st
The horizontal axis is the voltage applied between the electrode 1 and the second electrode 4, and the vertical axis is the current flowing through the conductive path between the first and second electrodes 1 and 4. . Conductive path width W
If the voltage is 17 μm, no current will flow up to approximately 400 V (electrical resistance is infinite).
４００Ｖ以上で急に電流が流れ始める。又、Ｗ＝３．０
μｍの場合は電圧１００Ｖまでは電流が流れず（電気抵
抗無限大）、１００Ｖを越えると急激に電流が流れ始め
る。すなわち、室温に於る素子の阻止電圧は前者で４０
０Ｖ、後者で１００Ｖということになる。Current suddenly begins to flow above 400V. Also, W=3.0
In the case of μm, no current flows (electrical resistance is infinite) up to a voltage of 100V, and when the voltage exceeds 100V, the current begins to flow suddenly. In other words, the blocking voltage of the device at room temperature is 40
0V, the latter 100V.
以上の様にＮ一層２の不純物密度を一定に保ち、導電路
幅Ｗを適当に変化させれば室温に於る阻止電圧の値を任
意に選べるのである。As described above, by keeping the impurity density of the N layer 2 constant and changing the conductive path width W appropriately, the value of the blocking voltage at room temperature can be arbitrarily selected.
さて１次に第６図のＷ＝ １．７ μｍ （阻止電圧４
００Ｖ）の素子に−し、阻止電圧の温度変化を調べたも
のを第７図に示す。ｗ＝１．７μｍ ＋ Ｎ−不純物密
度が２×１０” ｃｍ−３，の素子に於て、素子温度を
変化させながら測定した阻止電圧のデータが示されてい
る。Now, firstly, in Fig. 6, W = 1.7 μm (blocking voltage 4
FIG. 7 shows the temperature change of the blocking voltage of the device (00V). The data shows the blocking voltage measured while varying the device temperature in a device with w=1.7 μm + N- impurity density of 2×10” cm −3 .
この様に温度により、阻止電圧は種々の値に変化する。In this way, the blocking voltage changes to various values depending on the temperature.
以上の振舞に着目して、導電路の不純物密度Ｎ−と２幅
Ｗとを適当に選ぶことにより、阻止状態（抵抗無限大）
から導通状態へ移るポイント（阻止電圧）を温度によっ
て任意に選ぶことが出来ることから１本発明の様な半導
体温度センサー素子が得られるのである。Focusing on the above behavior, by appropriately selecting the impurity density N- and the two widths W of the conductive path, a blocking state (infinite resistance) can be achieved.
Since the point (blocking voltage) at which the conductive state changes can be arbitrarily selected depending on the temperature, a semiconductor temperature sensor element such as the present invention can be obtained.
尚１本発明の素子は、メタ）ｂフレームの先端に貼付け
られ、樹脂封止されてリード線が引出され。Note that the element of the present invention is attached to the tip of the metab frame, sealed with resin, and the lead wires are drawn out.
検温部分に直付けさせて使用されるものであることは当
然であるー
次に第８図を参照して本発明による半導体温度センサー
素子の使用法を説明する。即ち、第１回動ファン２００
と電源（例えばＡＣｌｏｏＶ）との間の接続線に直列に
挿入接続して、恒温槽（室）３００内の温度検知用セン
サーとして用いる。恒温槽３００内の温度が上昇して所
定の温度に達すると、半導体温度センサー素子１００に
電流が流れ（即ち、半導体温度センサー素子１００がＯ
Ｎ状態となり）、冷却ファン２００が回転して、恒温槽
３００内の温度を低下させる。恒温槽３００内の温度が
下がれば、半導体温度センサー素子１００も再びＯＦＦ
となシ、冷却ファン２００は回転をストノゾする。It goes without saying that it is used by directly attaching it to the temperature measuring part.Next, how to use the semiconductor temperature sensor element according to the present invention will be explained with reference to FIG. That is, the first rotating fan 200
It is inserted and connected in series to the connection line between the power supply (for example, AClooV) and used as a temperature detection sensor in the thermostatic chamber (room) 300. When the temperature inside the thermostatic chamber 300 rises and reaches a predetermined temperature, a current flows through the semiconductor temperature sensor element 100 (that is, when the semiconductor temperature sensor element 100 turns O
(N state), the cooling fan 200 rotates, and the temperature inside the constant temperature bath 300 is lowered. When the temperature inside the thermostatic chamber 300 drops, the semiconductor temperature sensor element 100 is also turned off again.
Then, the cooling fan 200 starts rotating.
以上説明したように本発明によれば、半導体にて構成し
た新規な構造の温度センサー素子を得ることができる。As explained above, according to the present invention, it is possible to obtain a temperature sensor element with a novel structure made of a semiconductor.
第１図は本発明の一実施例による半導体温度センサー素
子の断面図、第２図〜第４図は本発明の詳細な説明する
だめの素子断面図、第５図は本発明の別の実施例による
半導体温度センサー素子の断面図、第６図は第１図の実
施例の室温における素子特性を示した図、第７図は第１
図の実施例の阻止電圧の温度依存特性を示した図、第８
図は本発明による半導体温度センサー素子の使用例を示
した図である。
１及び１１・第１の電極、４及び１２・・−第２の電極
、２及び］０・・・Ｎ型Ｓｉ層、３．３’及び１３・第
１図 第５図
第６図
ｉ且止電−１［（）
阻止電圧（）
第２図
（Ａ）
（Ｂ）FIG. 1 is a cross-sectional view of a semiconductor temperature sensor element according to an embodiment of the present invention, FIGS. 2 to 4 are cross-sectional views of the element for detailed explanation of the present invention, and FIG. 5 is another embodiment of the present invention. A cross-sectional view of a semiconductor temperature sensor element according to an example, FIG. 6 is a diagram showing the element characteristics at room temperature of the embodiment of FIG. 1, and FIG.
Figure 8 shows the temperature dependence characteristics of the blocking voltage of the embodiment shown in the figure.
The figure is a diagram showing an example of use of the semiconductor temperature sensor element according to the present invention. 1 and 11・first electrode, 4 and 12...-second electrode, 2 and ]0...N-type Si layer, 3.3' and 13・Fig. 1 Fig. 5 Fig. 6 i and Stopping voltage -1 [() Blocking voltage () Figure 2 (A) (B)
Claims (1)
位置に形成された第１及び第２の電極と、前記半導体層
に前記第１及び第２の電極間の位置に形成された、前記
第１導電型とは反対の第２導電型の電気的に浮遊せる半
導体領域とを有し、前記第１及び第２の電極間に所定の
電圧を加えたとき、周囲温度が所定の温度より低い場合
は前記半導体層と前記半導体領域との接合部分に形成さ
れる空乏層が前記第１及び第２の電極間の導電路を遮断
しており、前記周囲温度が前記所定の温度以上の場合は
前記空乏層による前記導電路の遮断が解かれて前記第１
及び第２の電極間に電流が流れることを特徴とする半導
体温度センサー素子。1. A semiconductor layer of a first conductivity type, first and second electrodes formed on the semiconductor layer at positions apart from each other, and formed on the semiconductor layer at a position between the first and second electrodes. an electrically floating semiconductor region of a second conductivity type opposite to the first conductivity type, and when a predetermined voltage is applied between the first and second electrodes, the ambient temperature increases. If the temperature is lower than the predetermined temperature, the depletion layer formed at the junction between the semiconductor layer and the semiconductor region blocks the conductive path between the first and second electrodes, and the ambient temperature is lower than the predetermined temperature. If the temperature is higher than the temperature, the depletion layer unblocks the conductive path and the first
and a semiconductor temperature sensor element, characterized in that a current flows between the second electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59126322A JPS616881A (en) | 1984-06-21 | 1984-06-21 | Semiconductor temperature sensor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59126322A JPS616881A (en) | 1984-06-21 | 1984-06-21 | Semiconductor temperature sensor element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS616881A true JPS616881A (en) | 1986-01-13 |
| JPH0374004B2 JPH0374004B2 (en) | 1991-11-25 |
Family
ID=14932313
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59126322A Granted JPS616881A (en) | 1984-06-21 | 1984-06-21 | Semiconductor temperature sensor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS616881A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1995002172A1 (en) * | 1993-07-07 | 1995-01-19 | Siemens Aktiengesellschaft | Temperature sensor with a p-n junction |
| JPH09280966A (en) * | 1996-04-10 | 1997-10-31 | Nec Corp | Semiconductor temperature sensor element |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51129191A (en) * | 1975-05-02 | 1976-11-10 | Fujitsu Ltd | Semiconductor device |
| JPS531191A (en) * | 1976-05-19 | 1978-01-07 | Basf Ag | Catalysts for manufacturing ethylene oxide |
-
1984
- 1984-06-21 JP JP59126322A patent/JPS616881A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51129191A (en) * | 1975-05-02 | 1976-11-10 | Fujitsu Ltd | Semiconductor device |
| JPS531191A (en) * | 1976-05-19 | 1978-01-07 | Basf Ag | Catalysts for manufacturing ethylene oxide |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1995002172A1 (en) * | 1993-07-07 | 1995-01-19 | Siemens Aktiengesellschaft | Temperature sensor with a p-n junction |
| US5821599A (en) * | 1993-07-07 | 1998-10-13 | Siemens Aktiengesellschaft | Temperature sensor having a p-n junction |
| JPH09280966A (en) * | 1996-04-10 | 1997-10-31 | Nec Corp | Semiconductor temperature sensor element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0374004B2 (en) | 1991-11-25 |
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