JPS6163516A - Method of storing high-purity monosilane - Google Patents

Method of storing high-purity monosilane

Info

Publication number
JPS6163516A
JPS6163516A JP18277484A JP18277484A JPS6163516A JP S6163516 A JPS6163516 A JP S6163516A JP 18277484 A JP18277484 A JP 18277484A JP 18277484 A JP18277484 A JP 18277484A JP S6163516 A JPS6163516 A JP S6163516A
Authority
JP
Japan
Prior art keywords
monosilane
storage tank
purity
hydrogen
liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18277484A
Other languages
Japanese (ja)
Other versions
JPH0443844B2 (en
Inventor
Atsuhiko Hiai
日合 淳彦
Kazuo Wakimura
脇村 和生
Masao Tanaka
田中 将夫
Nobuhiro Fukuda
福田 信弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Toatsu Chemicals Inc
Original Assignee
Mitsui Toatsu Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Toatsu Chemicals Inc filed Critical Mitsui Toatsu Chemicals Inc
Priority to JP18277484A priority Critical patent/JPS6163516A/en
Publication of JPS6163516A publication Critical patent/JPS6163516A/en
Publication of JPH0443844B2 publication Critical patent/JPH0443844B2/ja
Granted legal-status Critical Current

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  • Silicon Compounds (AREA)

Abstract

PURPOSE:To store a liquid monosilane so that a high-purity monosilane is provided, by storing the liquid monosilane in a storage tank, and retaining the monosilane under reflux. CONSTITUTION:A hydrogen-containing monosilane which is produced and puri fied by a conventional procedure is condensed and stored in a storage tank. The storage tank is provided with a back-flow condenser, the monosilane is kept approximately at -112 deg.C, the boiling point of the monosilane, in a boiling state, and refluxed by the back-flow condenser. Consequently, gases such as oxygen, nitrogen, hydrogen, argon, etc. having lower boiling points than the monosilane has are removed, to give the high-purity monosilane having low content of low-boiling impurities. The monosilane thus stored is taken out from the bottom of the storage tank by a pump, heated by an evaporator, packed into a container and shipped.

Description

【発明の詳細な説明】 〔技術分野〕 本発明は、高純度モノシランの貯蔵方法に関する。更に
詳しくは、酸素、窒素、水素、アルゴン、ヘリウム、メ
タン等のモノシランより沸点の低いガスヲ含有しないモ
ノシランとして貯槽内に貯蔵する方法に関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a method for storing high purity monosilane. More specifically, it relates to a method of storing monosilane in a storage tank as a monosilane that does not contain gases having a lower boiling point than monosilane, such as oxygen, nitrogen, hydrogen, argon, helium, and methane.

〔従来技術〕[Prior art]

エレクトロニクス産業市場の急成長に伴いモノシランは
、IC5太陽電池、光感光体ドラム等における半導体薄
膜を形成するための原料ガスとして近年急激に需要が増
加している。モノシランガスの製造方法としては四塩化
硅素又は三塩化硅素等のクロロシラン類をアルカリ金属
ノ・イドライド又はアルギルアルミニウムハイドライド
で還元する方法あるいは、Mf2S+等の合金と塩酸又
は塩化アンモニウム等を反応させる方法が一般的である
With the rapid growth of the electronics industry market, demand for monosilane has increased rapidly in recent years as a raw material gas for forming semiconductor thin films in IC5 solar cells, photoreceptor drums, and the like. Common methods for producing monosilane gas include reducing chlorosilanes such as silicon tetrachloride or silicon trichloride with an alkali metal hydride or argylaluminium hydride, or reacting an alloy such as Mf2S+ with hydrochloric acid or ammonium chloride. It is true.

これらの方法により得られるモノシランガスは。Monosilane gas obtained by these methods.

活性炭やモレキーラーシープ等の吸着剤を用いて吸着精
製したり、蒸留により精製したり、あるいは、これらを
組み合わせて精製し、実用に供していた。これらの精製
法は、モノシランの沸点(−112℃)よりも高い沸点
の不純物に対しては、充分な精製効果があるが、酸素、
窒素、水素、アルゴン、ヘリウム、メタン等の、モノシ
ランより沸点の低い不純物に対しては、充分な精製効果
が得られない。従って、このような微量の不純物の混入
したまま、通常はモノシランの沸点以下の温度で製品タ
ンクに貯蔵され、ボンベ等の容器に充填されて各種用途
に使用されていた。
It has been purified by adsorption using an adsorbent such as activated carbon or Molecule Sheep, purified by distillation, or purified by a combination of these methods and put into practical use. These purification methods have sufficient purification effects on impurities with a boiling point higher than the boiling point of monosilane (-112°C), but they
A sufficient purification effect cannot be obtained for impurities having a boiling point lower than that of monosilane, such as nitrogen, hydrogen, argon, helium, and methane. Therefore, monosilane, with trace amounts of impurities mixed in, is usually stored in a product tank at a temperature below the boiling point of monosilane, filled into containers such as cylinders, and used for various purposes.

〔発明の目的〕[Purpose of the invention]

しかしながら、高純度を要求される半導体、太陽電池、
光感光体ドラム等の用途には、製品モノシランガス中の
酸素、窒素、水素、アルゴン、ヘリウム、メタン等の低
沸点物質の不純物の混入は、当該用途における製品の品
質に大きな影響を与える。本発明者らは、とくに、非晶
質シリコン太陽電池用には、原料モノシラン中に酸素や
窒素等の不純物が、非常に微小量存在しただけで該電池
の性能、と(に経日劣化特性に著しい影響を及ぼすこと
を見い出した。
However, semiconductors, solar cells, etc. that require high purity,
For applications such as photoreceptor drums, contamination of impurities with low boiling point substances such as oxygen, nitrogen, hydrogen, argon, helium, and methane in the product monosilane gas has a significant impact on the quality of the product in the application. The present inventors have found that, in particular, for amorphous silicon solar cells, the presence of very small amounts of impurities such as oxygen and nitrogen in the raw material monosilane will affect the performance of the cell (and its deterioration characteristics over time). was found to have a significant effect on

しかして1本発明の目的は、かかる非晶質シリコン太陽
電池のごとき特に高品質を要求される分野に好適に使用
できるように高純度のモノシラノガスを容器に充填貯蔵
する方法を提供することである。
Therefore, one object of the present invention is to provide a method for filling and storing a container with high-purity monosilano gas so that it can be suitably used in fields that require particularly high quality, such as amorphous silicon solar cells. .

〔発明の開示〕[Disclosure of the invention]

本発明の上記目的は液体モノシランの貯槽内でモノシラ
ンの還流下に保持することにより達成される。
The above objects of the invention are achieved by maintaining the monosilane under reflux in a reservoir of liquid monosilane.

以下1本発明の詳細な説明する。Hereinafter, one aspect of the present invention will be explained in detail.

本発明の適用しうるモノシランは、クロロシラン類を還
元剤を用いて還元して製造したものも、M P2 S 
tのごとき合金と塩酸又は塩化アンモニウム等を反応さ
せて製造したものも、いずれでもよい。いかなる製造プ
ロセスを経るにせよ、精製された水素を同伴しているモ
ノシランは、凝縮されて製品ホルダー鉾槽)に貯液され
る。
Monosilanes to which the present invention can be applied include those produced by reducing chlorosilanes using a reducing agent, and M P2 S
Any product produced by reacting an alloy such as t with hydrochloric acid or ammonium chloride may also be used. Regardless of the manufacturing process, monosilane accompanied by purified hydrogen is condensed and stored in a product holder tank.

本発明においては、この貯槽内で、モノシランをMK下
、好ましくは、モノシランの沸点である一112℃付近
に保持するものである。しかるのち、貯槽から好適には
貯槽の下部から、ポンプで抜き出し、気化器で加熱して
ボンベ等の容器に充填され、出荷される。ポンプで抜き
出す際には、モノシランを液状で抜出してもよいが、ま
た、還流下に保持した貯槽の気相部からモノシランを圧
縮器で抜出し、容器に充填してもよい。
In the present invention, monosilane is maintained in this storage tank under MK, preferably around -112°C, which is the boiling point of monosilane. Thereafter, it is extracted from the storage tank, preferably from the lower part of the storage tank, with a pump, heated with a vaporizer, filled into a container such as a cylinder, and shipped. When extracting with a pump, monosilane may be extracted in liquid form, but monosilane may also be extracted with a compressor from the gas phase of a storage tank held under reflux and filled into a container.

〔実施例〕                    
   1以下本発明を実施例により具体的に説明する。
〔Example〕
EXAMPLES 1 The present invention will be specifically explained below with reference to Examples.

(実施例1) 401!のジャケット付液体シランホルダーに3イの伝
熱面積を有する逆流コンデンサーを設置した。逆流コン
デンサーは、5kg/FQの圧力の液体窒素で冷却した
。ホルダ一部分は、75順厚のウレタンフオームで保冷
した。ホルダ一部分のジャケットには液体窒素を流さな
い。このホルダーに、毎時1ON−のキャリアガス(窒
素1500ppm、酸素とアルゴン1 o o ppm
を含有する水素)を用(・て毎時1.2 kgのシラン
な10時間供給し、液体シラン12kgを貯液した。
(Example 1) 401! A backflow condenser with a heat transfer area of 3 A was installed in a jacketed liquid silane holder. The counterflow condenser was cooled with liquid nitrogen at a pressure of 5 kg/FQ. A portion of the holder was kept cool with urethane foam having a thickness of 75 mm. Do not pour liquid nitrogen into the jacket of the holder. This holder was charged with 1 ON- of carrier gas (nitrogen 1500 ppm, oxygen and argon 1 o o ppm) per hour.
1.2 kg of silane was supplied per hour for 10 hours, and 12 kg of liquid silane was stored.

ホルダー内のシランは沸騰状態に保持され逆流コンデン
サーで還流される。
The silane in the holder is kept at boiling point and refluxed in a counterflow condenser.

この貯槽下部からポンプにより液体シランを抜き出し、
気化させたのち、471ボンベ2本にシランガスを充填
した。ボンベ中の不純物を分析したところ、窒素o、7
ppm、酸素とアルゴンの和0.3ppm、水素5 p
pm、メタン不検出であった。
Liquid silane is extracted from the bottom of this storage tank using a pump,
After vaporization, two 471 cylinders were filled with silane gas. Analysis of impurities in the cylinder revealed nitrogen o, 7
ppm, sum of oxygen and argon 0.3 ppm, hydrogen 5 p
pm, methane was not detected.

(比較例1) ホルダーのジャケットに液体窒素を通して。(Comparative example 1) Pass liquid nitrogen through the jacket of the holder.

−120℃に保持した以外は実施例1と同様にしてモノ
シランをボンベに充填した結果、ボンベ中の不純物は、
窒素12 ppm、酸素とアルゴンの和41)l)mで
あった。
As a result of filling a cylinder with monosilane in the same manner as in Example 1 except that the temperature was maintained at -120°C, impurities in the cylinder were as follows.
Nitrogen was 12 ppm, and the sum of oxygen and argon was 41) l)m.

〔発明の効果及び産業上の利用可能性〕本発明方法忙よ
り貯蔵されたモノシランを、例えば「471!ボンベ」
に充填した場合、窒素の混入量は、1 ppm以下、酸
素の混入量は、0.5 ppm以下とすることができ、
水素も10 ppm以下となり、さらに、アルゴン、ヘ
リウム、メタン等は不検出というような超高純度シリコ
ンを容器に充填することが可能となる。したがって、こ
のようにして容器に充填されたモノシランは、IC,太
陽電池、光感光体ドラム等の用途に効果的に供されるも
のである。
[Effects and industrial applicability of the invention] The monosilane stored by the method of the present invention is stored in a "471! cylinder", for example.
When filled, the amount of nitrogen mixed in can be set to 1 ppm or less, and the mixed amount of oxygen can be set to 0.5 ppm or less,
Hydrogen is also reduced to 10 ppm or less, and furthermore, it becomes possible to fill the container with ultra-high purity silicon, in which argon, helium, methane, etc. are undetectable. Therefore, the monosilane filled into the container in this way can be effectively used for applications such as ICs, solar cells, and photosensitive drums.

Claims (1)

【特許請求の範囲】[Claims] (1)液体モノシランの貯槽内でモノシランの還流下に
保持することを特徴とする高純度モノシランの貯蔵方法
(1) A method for storing high-purity monosilane, which comprises maintaining monosilane under reflux in a liquid monosilane storage tank.
JP18277484A 1984-09-03 1984-09-03 Method of storing high-purity monosilane Granted JPS6163516A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18277484A JPS6163516A (en) 1984-09-03 1984-09-03 Method of storing high-purity monosilane

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18277484A JPS6163516A (en) 1984-09-03 1984-09-03 Method of storing high-purity monosilane

Publications (2)

Publication Number Publication Date
JPS6163516A true JPS6163516A (en) 1986-04-01
JPH0443844B2 JPH0443844B2 (en) 1992-07-17

Family

ID=16124181

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18277484A Granted JPS6163516A (en) 1984-09-03 1984-09-03 Method of storing high-purity monosilane

Country Status (1)

Country Link
JP (1) JPS6163516A (en)

Also Published As

Publication number Publication date
JPH0443844B2 (en) 1992-07-17

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