JPS6154012A - Magneto-resistance effect head - Google Patents

Magneto-resistance effect head

Info

Publication number
JPS6154012A
JPS6154012A JP17492284A JP17492284A JPS6154012A JP S6154012 A JPS6154012 A JP S6154012A JP 17492284 A JP17492284 A JP 17492284A JP 17492284 A JP17492284 A JP 17492284A JP S6154012 A JPS6154012 A JP S6154012A
Authority
JP
Japan
Prior art keywords
lead
conductors
insulating layer
magneto
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17492284A
Other languages
Japanese (ja)
Inventor
Hisahiro Miki
久弘 三木
Yoshiyori Miura
三浦　義従
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP17492284A priority Critical patent/JPS6154012A/en
Publication of JPS6154012A publication Critical patent/JPS6154012A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects

Abstract

PURPOSE:To prevent a short circuit and obtain excellent frequency characteristics, and raise a playback output voltage and improve an S/N ratio by making the thickness of an insulating layer large near the lead-out conductor of the magneto-resistance effect element. CONSTITUTION:Insulating layers 5A and 5B made of nonconductive and nonmagnetic materials are provided at both sides of the magneto-resistance element 1, and a metallic magnetic layer 2 having high magnetic permeability and lead- out conductors 3A and 3B connected to the element 1 are provided outside the layers 5A. Insulating layers 5C and 5D of nonconductive and nonmagnetic materials near the conductors 3A and 3B are large in thickness to prevent a short circuit nearby the conductors 3A and 3B, improving the frequency characteristics. Further, the voltage applied between the conductors 3A and 3B is raised to raise the playback output voltage, thereby improving the S/N ratio.

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は、磁気記録媒体に記録された信号を磁気抵抗効
果を利用して読み出す磁気抵抗効果ヘッドに係り、特に
同ヘッドの安定性向上に関するものである。[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a magnetoresistive head that reads signals recorded on a magnetic recording medium using the magnetoresistive effect, and particularly relates to improving the stability of the head. It is.

〔発明の背景〕[Background of the invention]

従来の磁気抵抗効果ヘッドは、特開昭５７−１８６２２
４号に記載のように磁気シールド型構造として艮好な周
波数特性が得られるような構造となっていた。しかし同
構造のヘッドにおいて周波数特性を艮くするため罠は、
ギャップ材となる絶縁層を薄くする必要があり、その場
合の信頼性については考慮されていなかった。The conventional magnetoresistive head is disclosed in Japanese Patent Application Laid-Open No. 57-18622.
As described in No. 4, the structure was such that excellent frequency characteristics could be obtained as a magnetically shielded structure. However, in order to change the frequency characteristics of a head with the same structure, the trap is
The insulating layer that serves as the gap material needs to be made thinner, and reliability in this case has not been considered.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、第２図の第２の絶縁層５Ｂの引出し用
導体５Ａ、５Ｂ近傍のショートを防止し、かつ良好な周
波数特性を得て、引出し用導体５ノ（。An object of the present invention is to prevent short circuits near the lead-out conductors 5A and 5B of the second insulating layer 5B in FIG.

３Ｂ間にかけろ電圧を上けて再生出力電圧を高めて信号
対雑音の比（以下ｓ／１ｑと記す）の向上を図った磁気
抵抗効果ヘッドを提供することにある。An object of the present invention is to provide a magnetoresistive head in which the signal-to-noise ratio (hereinafter referred to as s/1q) is improved by increasing the voltage applied between 3B and increasing the reproduction output voltage.

〔発明の概要〕[Summary of the invention]

第２の絶縁層５Ｂの引出し用導体３Ａ　、　５Ｂ近傍の
ショートを防止するためには第２の絶縁層５Ｂの膜厚を
大きくすればよい。しかしこの場合、磁気抵抗効果素子
１と高透磁率金属磁性層２との間隙がひろがって良好な
周波＆１４！７１−性が得られない。そこで本発明は第
５図のように磁気抵抗効果素子１の引出し用導体３Ａ　
、　５Ｂ近傍のみ厚付げ絶縁層５Ｃ、５Ｄを形成するこ
とにより解決したものである。In order to prevent short circuits near the lead-out conductors 3A and 5B of the second insulating layer 5B, the thickness of the second insulating layer 5B may be increased. However, in this case, the gap between the magnetoresistive element 1 and the high permeability metal magnetic layer 2 widens, making it impossible to obtain good frequency characteristics. Therefore, the present invention provides a lead-out conductor 3A of the magnetoresistive element 1 as shown in FIG.
, 5B is solved by forming thick insulating layers 5C and 5D only in the vicinity of 5B.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明の一実施例を第３図により説明する。磁気
抵抗効果ヘッドの溝底は、たとえばパーマロイなどの一
軸異方性を有する強磁性材料よりなる磁気抵抗効果素子
１、この磁気抵抗効果素子１０両側に設けられたたとえ
ばＳｉｎ。An embodiment of the present invention will be described below with reference to FIG. The groove bottom of the magnetoresistive head is formed by a magnetoresistive element 1 made of a ferromagnetic material having uniaxial anisotropy such as permalloy, and a magnetoresistive element 1 provided on both sides of the magnetoresistive element 10, for example.

などの非導電性非磁性材料よりなる第１の絶縁層５Ａお
よび第２の絶縁層５Ｂ、第１の絶縁層５Ａの外側に設げ
られたたとえばパーマロイなどの高透磁率金属磁性材料
よりなる高透磁率金属磁性層２、前記磁気抵抗効果素子
１に接続されたたとえばアルミニウムなどの金属材料よ
りなる引出し用導体５Ａ　、　５Ｂ、第１の絶縁層に固
定されたたとえばＮｉ−Ｚｎフェライトなどの高透磁率
磁性材料よりなる基板４、および磁気抵抗効果素子１の
引出し用導体３Ａ　、　５Ｂ近傍のみのたとえばＳ　ｉ
　Ｏ，などの非導電性非磁性材料よりなる厚付は絶縁層
５Ｃ、５Ｄよりなる。この磁気抵抗効果ヘッドは基板４
の上に、たとえばスノくツタまたは蒸着などの薄膜形成
手段によって各絶縁層５Ａ、　５Ｂ、　５Ｃ，５Ｄ、高
透磁率金属磁性層２、引出し用導体３Ａ　、　５Ｂおよ
び磁気抵抗効果素子１を形成することにより製作される
。動作は、特開５７−１８６２２４号第２頁にあるとお
りであるが、本実施例によれば、引出し用導体３Ａ　、
　３Ｂの近傍におけるショートを防止したことにより、
良好な周波数特性を得られかつ引出し用導体５Ａ。A first insulating layer 5A and a second insulating layer 5B made of a non-conductive non-magnetic material such as A magnetic permeability metal magnetic layer 2, lead-out conductors 5A and 5B made of a metal material such as aluminum connected to the magnetoresistive element 1, and a highly permeable metal material such as Ni-Zn ferrite fixed to the first insulating layer. For example, Si
The thick insulating layers 5C and 5D are made of a non-conductive non-magnetic material such as O. This magnetoresistive head has a substrate 4
The insulating layers 5A, 5B, 5C, 5D, the high magnetic permeability metal magnetic layer 2, the lead-out conductors 3A, 5B, and the magnetoresistive element 1 are formed thereon by a thin film forming method such as burlap or vapor deposition. It is manufactured by The operation is as described in JP-A No. 57-186224, page 2, but according to this embodiment, the drawer conductor 3A,
By preventing short circuits near 3B,
Good frequency characteristics can be obtained and the lead-out conductor is 5A.

３Ｂ間Ｋかける電圧を上げられ再生出力電圧が上がるこ
とにより８／Ｎの向上に効果がある。By increasing the voltage applied between 3B and increasing the reproduction output voltage, it is effective to improve 8/N.

〔発明の効果〕〔Effect of the invention〕

本発明によれば、従来の磁気抵抗効果ヘッドであると絶
縁層５Ａ　、　５Ｂの膜厚が０．２５μｍであった場合
罠引出し用導体３Ａ　、　５Ｂ間にかける電圧が３ｖ程
度で引出し用導体５Ａ、３Ｂの近傍でショートが見られ
た。これが引出し用導体３Ａ　、　３Ｂ近傍のみ厚付は
絶縁Ｍ　５Ｃ、５Ｄの膜厚を０．４μｍ形成することに
よりて引出し用導体５Ａ、３８間にかける電圧を１０Ｖ
に上げてもショートは見られず、このことによって再生
出力電圧も上げることが出来るのでＳハの向上に効果が
ある。According to the present invention, in a conventional magnetoresistive head, when the thickness of the insulating layers 5A and 5B is 0.25 μm, the voltage applied between the trap lead-out conductors 3A and 5B is about 3V. , a short circuit was observed near 3B. This means that only the thickness near the lead-out conductors 3A and 3B is insulated. By forming the film thickness of 5C and 5D to 0.4 μm, the voltage applied between the lead-out conductors 5A and 38 can be reduced to 10V.
No short-circuit was observed even when the voltage was increased to 100. This allows the reproduction output voltage to be increased, which is effective in improving S.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は従来の代表的な磁気抵抗効果ヘッドの要部を示
す平面図、第２図は第１図のＸ−Ｙ線断面図、第３図は
本発明の一実施例の出猟抵抗効果ヘッドの第２図に対応
する断面図である。 １・・・磁気抵抗効果素子 ２・・・高透１率金属磁性層 ３Ａ、　３Ｂ・−・引出し用導体 ４・・・基板　　　　　　５Ａ・・・第１の絶縁層５Ｂ
・・・第２の絶縁層　　５Ｃ，５Ｄ−・・厚付は絶縁層
７・・・磁気記録媒体FIG. 1 is a plan view showing the main parts of a typical conventional magnetoresistive head, FIG. 2 is a sectional view taken along the X-Y line in FIG. 1, and FIG. 3 is a hunting resistor of an embodiment of the present invention. FIG. 3 is a sectional view corresponding to FIG. 2 of the effect head; 1... Magnetoresistive element 2... High transmittance 1-percentage metal magnetic layer 3A, 3B... Leading conductor 4... Substrate 5A... First insulating layer 5B
...Second insulating layer 5C, 5D-...Thickness is insulating layer 7...Magnetic recording medium

Claims (1)

【特許請求の範囲】[Claims] 高透磁率磁性基板上に、第１の絶縁層、電流を流すため
の引き出し用導体を具備した磁気抵抗効果素子、第２の
絶縁層、及び高透磁率金属磁性層を順次形成した磁気抵
抗効果ヘッドにおいて、第２の絶縁層の膜厚が一様でな
く、前記磁気抵抗効果素子の引き出し用導体近傍のみ、
前記第２の絶縁層の膜厚が大きいことを特徴とする磁気
抵抗効果ヘッド。A magnetoresistive effect in which a first insulating layer, a magnetoresistive element equipped with a lead-out conductor for flowing current, a second insulating layer, and a high permeability metal magnetic layer are sequentially formed on a high magnetic permeability magnetic substrate. In the head, the thickness of the second insulating layer is not uniform, and only in the vicinity of the lead-out conductor of the magnetoresistive element,
A magnetoresistive head characterized in that the second insulating layer has a large thickness.
JP17492284A 1984-08-24 1984-08-24 Magneto-resistance effect head Pending JPS6154012A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17492284A JPS6154012A (en) 1984-08-24 1984-08-24 Magneto-resistance effect head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17492284A JPS6154012A (en) 1984-08-24 1984-08-24 Magneto-resistance effect head

Publications (1)

Publication Number Publication Date
JPS6154012A true JPS6154012A (en) 1986-03-18

Family

ID=15987057

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17492284A Pending JPS6154012A (en) 1984-08-24 1984-08-24 Magneto-resistance effect head

Country Status (1)

Country Link
JP (1) JPS6154012A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04143914A (en) * 1990-10-05 1992-05-18 Nec Corp Magneto-resistance effect head
EP0756269A2 (en) * 1995-07-28 1997-01-29 Read-Rite Corporation Variable gap magnetoresistive transducer and method of making the same
US5701221A (en) * 1994-04-06 1997-12-23 Hitachi, Ltd. Magnetoresistive thin-film magnetic head and method of fabrication thereof

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04143914A (en) * 1990-10-05 1992-05-18 Nec Corp Magneto-resistance effect head
US5701221A (en) * 1994-04-06 1997-12-23 Hitachi, Ltd. Magnetoresistive thin-film magnetic head and method of fabrication thereof
US5897969A (en) * 1994-04-06 1999-04-27 Hitachi, Ltd. Method of fabricating a magnetoresistive thin-film magnetic head
EP0756269A2 (en) * 1995-07-28 1997-01-29 Read-Rite Corporation Variable gap magnetoresistive transducer and method of making the same
EP0756269A3 (en) * 1995-07-28 1998-01-07 Read-Rite Corporation Variable gap magnetoresistive transducer and method of making the same

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