JPS6152818U - - Google Patents
Info
- Publication number
- JPS6152818U JPS6152818U JP13684784U JP13684784U JPS6152818U JP S6152818 U JPS6152818 U JP S6152818U JP 13684784 U JP13684784 U JP 13684784U JP 13684784 U JP13684784 U JP 13684784U JP S6152818 U JPS6152818 U JP S6152818U
- Authority
- JP
- Japan
- Prior art keywords
- fet
- matching circuit
- input
- output matching
- monolithic microwave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004020 conductor Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
Landscapes
- Microwave Amplifiers (AREA)
Description
第１図は、従来のモノリシツク・マイクロ波Ｆ
ＥＴ増幅器の構造図、第２図はその実装法を示す
図、第３図および第４図はこの考案の一実施例に
よるモノリシツク・マイクロ波ＦＥＴ増幅器の構
造図、第５図はその実装法を示す図である。
１はＦＥＴ、３はＦＥＴを構成するゲート電極
、４はドレイン電極、５は入力側整合回路、６は
出力側整合回路、７はＧａＡｓ等の半導体基板、
８は接地導体、９はバイア・ホールである。なお
、図中同一符号は同一、又は相当部分を示す。
Figure 1 shows a conventional monolithic microwave F
A structural diagram of an ET amplifier, FIG. 2 shows its mounting method, FIGS. 3 and 4 show a structural diagram of a monolithic microwave FET amplifier according to an embodiment of this invention, and FIG. 5 shows its mounting method. FIG. 1 is an FET, 3 is a gate electrode constituting the FET, 4 is a drain electrode, 5 is an input side matching circuit, 6 is an output side matching circuit, 7 is a semiconductor substrate such as GaAs,
8 is a ground conductor, and 9 is a via hole. Note that the same reference numerals in the figures indicate the same or equivalent parts.
Claims (1)
に形成し、この面と相対すを面に入出力整合回路
を形成し、前記ＦＥＴのゲート電極・ドレイン電
極と入出力整合回路をバイア・ホールによつて導
通させたことを特徴とするモノリシツク・マイク
ロ波ＦＥＴ増幅器。 A FET and a ground conductor are formed on the same surface of a semiconductor substrate, an input/output matching circuit is formed on the opposite surface, and the gate electrode/drain electrode of the FET and the input/output matching circuit are connected by via holes. A monolithic microwave FET amplifier characterized in that it is conductive.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13684784U JPS6152818U (en) | 1984-09-10 | 1984-09-10 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13684784U JPS6152818U (en) | 1984-09-10 | 1984-09-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6152818U true JPS6152818U (en) | 1986-04-09 |
Family
ID=30695280
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13684784U Pending JPS6152818U (en) | 1984-09-10 | 1984-09-10 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6152818U (en) |
-
1984
- 1984-09-10 JP JP13684784U patent/JPS6152818U/ja active Pending
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