JPS6149832B2 - - Google Patents
Info
- Publication number
- JPS6149832B2 JPS6149832B2 JP3105577A JP3105577A JPS6149832B2 JP S6149832 B2 JPS6149832 B2 JP S6149832B2 JP 3105577 A JP3105577 A JP 3105577A JP 3105577 A JP3105577 A JP 3105577A JP S6149832 B2 JPS6149832 B2 JP S6149832B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- glass
- alloy
- oxide layer
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 39
- 239000011521 glass Substances 0.000 claims description 27
- 239000000956 alloy Substances 0.000 claims description 23
- 229910045601 alloy Inorganic materials 0.000 claims description 23
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 2
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 2
- 229910002064 alloy oxide Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 25
- 238000000034 method Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000009413 insulation Methods 0.000 description 5
- 239000010953 base metal Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000005219 brazing Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Insulated Metal Substrates For Printed Circuits (AREA)
- Structure Of Printed Boards (AREA)
Description
本発明は、たとえば集積回路装置などの半導体
装置や基板上に抵抗要素を形成した感熱ヘツド用
基板など種々の電気要素、回路要素を形成載置す
るための電気装置用基板の改良に関する。
従来この種の基板にはセラミツクが主として使
用されてきた。その最大の理由は絶縁性にすぐれ
ている点である。しかし、セラミツク基板は機械
的強度、特に抵抗力が弱く、また平坦度を必要と
するこの種基板においては焼成後研磨加工を施さ
ねばならない。
そこで、金属基体の使用が考えられるが、この
場合電気装置用基板としての絶縁性を付与するこ
とが必要である。このために金属基体上にガラス
層を形成する方法がある。この方法についてはた
とえば特公昭47−7396号には、ガラス粒子の流動
床に調節酸化させた基体を配置し、被覆された基
体を流動床の外側で焼成してガラス被膜を熟成さ
せる方法が開示されている。また、特公昭49−
33824号には無アルカリガラスと金属酸化物とか
ら構成される釉を金属板上に焼付けた琺瑯材料集
積回路基板が開示されている。これら公知技術は
主として絶縁層の形成技術について詳しく述べら
れているが、基体金属に対する考察はほとんど無
い。
本発明は金属基体上にガラス層を形成した電気
装置用基板において、特にその基体金属組成を中
心に改良を図ろうとするものである。
本発明基板は第１図に示すように金属基体１
と、該基体表面に形成された基体金属被覆層と、
該酸化層を被覆するガラス層とを具備するもので
ある。
基体金属はニツケル39〜55重量％、残部実質的
に鉄よりなる合金、さらにはアルミニウム0.1〜
３重量％、チタン0.1〜1.5重量％の範囲内で選ば
れたアルミニウム及びチタンのうち単独又は複合
で0.1〜３重量％、ニツケル39〜55重量％、残部
実質的に鉄よりなる合金である。
本発明においては、基体合金を上記組成とする
ことにより、電気装置の製造、使用の際の熱的、
機械的影響に対しても安定な点で有利である。
さらに、アルミニウム、チタンを含有する合金
を用いるとより均一で電気抵抗が高くかつ基体と
の密着性にすぐれた酸化層が形成され、電気装置
用基板として好ましい結果が得られる。
基体合金の熱膨張係数は40〜100×10-7／℃で
あり、したがつてガラスは熱膨張係数30〜95×
10-7／℃のものを用いることができる。
本発明の他の利点は次のとおりである。
たとえばシリコンペレツトのマウント時の高温
あるいはろう付、溶接等の熱的、機械的変化に対
して十分な強度を保ちうる。
また、使用時、作動時の温度上昇に伴なう熱歪
み、熱サイクルに対して十分に耐え、また耐候性
も有する。
また、ガラスの使用は、基板の絶縁性を高め、
ペースト塗布時のにじみを無くし、また熱伝導率
を適当に制御しうる点で利点を有する。
基体合金としての前記組成合金の使用は次のよ
うな有利な点をも有する。
たとえば、加工性にすぐれているので様々な形
状に対応できる。さらに熱伝導性にすぐれている
ので大規模な集積回路などの熱放散性を要求され
る分野での使用に好適する。この熱伝導性の良好
な点は基体合金層、酸化層、ガラス層のそれぞれ
の厚さを選択することにより熱放散性を調節する
ことができることを意味し、したがつて容易に任
意の熱的特性をもつた基板を製造できる。また本
発明基板の基体合金は耐食性及び耐熱性にすぐれ
ているので電気装置の製造、使用等における各種
環境に耐えることができる。たとえば使用温度は
400℃以上にても可能であり、酸洗等の処理もで
きる。基板の基体合金はロウ付性、溶接性にもす
ぐれているので電気装置の組立てに都合がよい。
さらに機械的強度も良いので、基板基体として好
適である。
この合金基体にガラスを被覆するには、合金基
体表面のガラス被覆を必要とする部分に酸化層を
形成する必要がある。このための一般的方法は合
金基体を酸化して、ガラスとの接着性に富んだ酸
化層を形成する。前記の組合範囲にある合金はガ
ラスとの接着可能な酸化層を形成するものであ
る。即ち、前記合金を高温酸化するとα−
Fe2O3、Fe3O4、Al2O3、TiO2などを主体とする
酸化層が形成され、ガラスと良好に接着する。
基体合金と酸化物層との接着性も重要である。
この点で、前記合金でアルミニウムやチタンを含
有させる手段は望ましい。
本発明を構成する基体合金についての好ましい
範囲及び最も好ましい範囲を第１表に示す。
The present invention relates to improvements in substrates for electrical devices on which various electrical elements and circuit elements are formed and mounted, such as semiconductor devices such as integrated circuit devices and thermal head substrates having resistive elements formed on the substrate. Conventionally, ceramics have been mainly used for this type of substrate. The biggest reason for this is its excellent insulation properties. However, ceramic substrates have low mechanical strength, particularly low resistance, and this type of substrate, which requires flatness, must be polished after firing. Therefore, it is conceivable to use a metal substrate, but in this case it is necessary to provide insulation properties as a substrate for an electric device. For this purpose, there is a method of forming a glass layer on a metal substrate. Regarding this method, for example, Japanese Patent Publication No. 47-7396 discloses a method in which a substrate subjected to controlled oxidation is placed in a fluidized bed of glass particles, and the coated substrate is baked outside the fluidized bed to age the glass coating. has been done. In addition, special public service
No. 33824 discloses an enamel integrated circuit board in which a glaze made of alkali-free glass and metal oxide is baked onto a metal plate. Although these known techniques mainly describe in detail the technique for forming an insulating layer, there is almost no consideration given to the base metal. The present invention aims to improve a substrate for an electrical device in which a glass layer is formed on a metal substrate, with particular emphasis on the base metal composition. The substrate of the present invention has a metal base 1 as shown in FIG.
and a base metal coating layer formed on the surface of the base,
and a glass layer covering the oxidized layer. The base metal is an alloy consisting of 39-55% by weight of nickel, the balance being essentially iron, and 0.1-55% of aluminum.
3% by weight, titanium from 0.1 to 1.5% by weight of aluminum and titanium, singly or in combination, from 0.1 to 3% by weight, nickel from 39 to 55% by weight, and the balance substantially consisting of iron. In the present invention, by making the base alloy have the above composition, thermal
It is also advantageous in that it is stable against mechanical influences. Furthermore, when an alloy containing aluminum and titanium is used, an oxide layer that is more uniform, has high electrical resistance, and has excellent adhesion to the substrate is formed, and favorable results can be obtained as a substrate for an electrical device. The coefficient of thermal expansion of the base alloy is 40-100×10 -7 /°C, and therefore the coefficient of thermal expansion of glass is 30-95×
10 -7 /°C can be used. Other advantages of the invention are as follows. For example, it can maintain sufficient strength against thermal and mechanical changes such as high temperatures during mounting silicon pellets, brazing, welding, etc. It also has sufficient resistance to thermal distortion and thermal cycles associated with temperature increases during use and operation, and is also weather resistant. In addition, the use of glass increases the insulation properties of the substrate,
It has the advantage of eliminating bleeding during paste application and allowing appropriate control of thermal conductivity. The use of the compositional alloy as the base alloy also has the following advantages. For example, it has excellent workability, so it can be made into a variety of shapes. Furthermore, since it has excellent thermal conductivity, it is suitable for use in fields that require heat dissipation such as large-scale integrated circuits. This good thermal conductivity means that the heat dissipation properties can be adjusted by selecting the respective thicknesses of the base alloy layer, oxide layer, and glass layer, and therefore it is easy to It is possible to manufacture substrates with specific characteristics. Furthermore, since the base alloy of the substrate of the present invention has excellent corrosion resistance and heat resistance, it can withstand various environments in the manufacture and use of electrical devices. For example, the operating temperature is
It is also possible to process at temperatures above 400°C, and treatments such as pickling are also possible. The base alloy of the substrate has excellent brazing and welding properties, making it convenient for assembling electrical devices.
Furthermore, since it has good mechanical strength, it is suitable as a substrate substrate. In order to coat this alloy substrate with glass, it is necessary to form an oxide layer on the portion of the alloy substrate surface that requires glass coating. A common method for this is to oxidize the alloy substrate to form an oxide layer that has good adhesion to the glass. Alloys within the above range of combinations are those which form an oxide layer capable of adhering to glass. That is, when the alloy is oxidized at high temperature, α-
An oxide layer mainly composed of Fe 2 O 3 , Fe 3 O 4 , Al 2 O 3 , TiO 2 , etc. is formed, and it adheres well to glass. Adhesion between the base alloy and the oxide layer is also important.
In this respect, it is desirable to include aluminum or titanium in the alloy. Preferred ranges and most preferred ranges for the base alloy constituting the present invention are shown in Table 1.
【表】
また、基体合金を酸化する手段について第２表
に示す。[Table] Table 2 also shows means for oxidizing the base alloy.
【表】
次に本発明基体合金組成を前記値に限定する理
由を実験データとともに説明する。
本発明基体合金組成を決定した最大の要因は熱
膨張係数基体と酸化層の密着性及び形成される酸
化層の電気抵抗値である。第３表から本発明基体
合金はこの点で有利であることが明らかにされ
る。[Table] Next, the reason why the composition of the base alloy of the present invention is limited to the above values will be explained together with experimental data. The biggest factors determining the composition of the substrate alloy of the present invention are the coefficient of thermal expansion, the adhesion between the substrate and the oxide layer, and the electrical resistance value of the oxide layer formed. Table 3 shows that the substrate alloy according to the invention is advantageous in this respect.
【表】
ガラスを被覆する方法は次のような方法があ
る。粉末ガラスをペースト状にし、基体上に塗布
して炉で加熱、封着する方法、ガラス板を基体上
に乗せ加熱、封着する方法等がある。
ガラス層の厚さは0.01mm以上が絶縁性の点から
好ましい。さらに好ましくは0.1〜0.5mmである。
本発明基板はガラス層を表面に有するので平坦
性は良好である。
また、金やアルミニウムの蒸着が可能であり、
有機接着剤の使用も可能である。
さらに、第２図に示すごとく多層構造を得るこ
とも容易である。第２図において４は金属層、５
は酸化層、６はガラス層である。
また、基体表面に対し局部的、部分的にガラス
被覆を行うこともできる。
実施例
第３表に示す本発明基体合金を用いて、これら
に高温酸化処理として大気中で800℃にて５分間
加熱して酸化膜を付着させる。次にガラス粉末を
沈積させ加熱し、基体酸化膜にガラスを付着させ
加熱し、基体酸化膜にガラスを付着させる。この
ようにして得た基板はいずれも絶縁性にすぐれた
ガラス面を有していた。また酸化層と基体との密
着性もすぐれていた。[Table] The following methods are available for coating glass. There are methods such as making powdered glass into a paste form, applying it onto a substrate, heating it in a furnace, and sealing it, and placing a glass plate on the substrate, heating it, and sealing it. The thickness of the glass layer is preferably 0.01 mm or more from the viewpoint of insulation. More preferably, it is 0.1 to 0.5 mm. Since the substrate of the present invention has a glass layer on its surface, it has good flatness. It is also possible to deposit gold and aluminum,
It is also possible to use organic adhesives. Furthermore, it is easy to obtain a multilayer structure as shown in FIG. In Fig. 2, 4 is a metal layer, 5
is an oxide layer, and 6 is a glass layer. Further, the surface of the substrate can be locally or partially coated with glass. EXAMPLE Using the base alloys of the present invention shown in Table 3, these were heated at 800° C. for 5 minutes in the air as a high-temperature oxidation treatment to form an oxide film. Next, glass powder is deposited and heated to adhere glass to the base oxide film and heated to adhere glass to the base oxide film. All of the substrates thus obtained had glass surfaces with excellent insulation properties. Furthermore, the adhesion between the oxide layer and the substrate was also excellent.
第１図および第２図は本発明基板の実施例を示
す断面図である。
１……基体、２，５……酸化層、３，６……ガ
ラス層、４……金属層。
FIGS. 1 and 2 are cross-sectional views showing embodiments of the substrate of the present invention. 1...Substrate, 2, 5... Oxide layer, 3, 6... Glass layer, 4... Metal layer.
Claims (1)
重量％の範囲内で選ばれたアルミニウム及びチタ
ンのうち単独又は複合にて0.1〜３重量％、ニツ
ケル39〜55重量％、残部実質的に鉄よりなる合金
で形成された基体及び該基体表面に高温酸化によ
り形成されたAl2O3及びTiO2を主体とする基体合
金酸化層と、該酸化層を被覆するガラス層とを具
備してなる電気装置用基板。1 Aluminum 0.1-3% by weight, titanium 0.1-1.5
A substrate formed of an alloy consisting of 0.1 to 3% by weight of aluminum and titanium, alone or in combination, selected within a range of 0.1 to 3% by weight, 39 to 55% by weight of nickel, and the remainder substantially consisting of iron, and on the surface of the substrate. A substrate for an electrical device, comprising a base alloy oxide layer mainly composed of Al 2 O 3 and TiO 2 formed by high-temperature oxidation, and a glass layer covering the oxide layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3105577A JPS53116472A (en) | 1977-03-23 | 1977-03-23 | Electric device board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3105577A JPS53116472A (en) | 1977-03-23 | 1977-03-23 | Electric device board |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS53116472A JPS53116472A (en) | 1978-10-11 |
| JPS6149832B2 true JPS6149832B2 (en) | 1986-10-31 |
Family
ID=12320789
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3105577A Granted JPS53116472A (en) | 1977-03-23 | 1977-03-23 | Electric device board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS53116472A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61212096A (en) * | 1985-03-18 | 1986-09-20 | 株式会社日立製作所 | Multilayer interconnection board |
| JPH0582972A (en) * | 1985-03-18 | 1993-04-02 | Hitachi Ltd | Multilayered wiring board |
| JPH01194492A (en) * | 1988-01-29 | 1989-08-04 | Shinko Electric Ind Co Ltd | Manufacture of glass-glazed substrate |
-
1977
- 1977-03-23 JP JP3105577A patent/JPS53116472A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS53116472A (en) | 1978-10-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS60500837A (en) | thick film resistor circuit | |
| JPS6149829B2 (en) | ||
| JP2990955B2 (en) | Copper metallization method | |
| JPS6149833B2 (en) | ||
| JPS6149832B2 (en) | ||
| JPS6149828B2 (en) | ||
| JPH0223498B2 (en) | ||
| JPH0297686A (en) | Production of enameled substrate | |
| JPH0297687A (en) | Production of enameled substrate | |
| JPS6149831B2 (en) | ||
| JPH0368116B2 (en) | ||
| JPS63136485A (en) | Ceramic heater | |
| JPS6149830B2 (en) | ||
| JPH04209588A (en) | Metallic substrate | |
| JPS60145980A (en) | Ceramic sintered body with metallized coating and manufacture | |
| JPS58181868A (en) | Crystallized enamel base plate | |
| JPH0342344Y2 (en) | ||
| JPH0450186A (en) | Method for forming metallized layer on aluminum nitride substrate | |
| JPS6072185A (en) | Panel heater | |
| JPH0436478B2 (en) | ||
| JPS6135588A (en) | Substrate for printed circuit | |
| JPH0563108B2 (en) | ||
| JPS62183149A (en) | Pin grid array package | |
| JPS6149834B2 (en) | ||
| JPS5917879B2 (en) | Board for electrical equipment |