JPS6145485Y2 - - Google Patents
Info
- Publication number
- JPS6145485Y2 JPS6145485Y2 JP5520380U JP5520380U JPS6145485Y2 JP S6145485 Y2 JPS6145485 Y2 JP S6145485Y2 JP 5520380 U JP5520380 U JP 5520380U JP 5520380 U JP5520380 U JP 5520380U JP S6145485 Y2 JPS6145485 Y2 JP S6145485Y2
- Authority
- JP
- Japan
- Prior art keywords
- tube
- measuring device
- internal liquid
- ion concentration
- concentration measuring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- 239000007788 liquid Substances 0.000 claims description 55
- 239000004065 semiconductor Substances 0.000 claims description 21
- 238000007789 sealing Methods 0.000 claims description 5
- 238000000691 measurement method Methods 0.000 claims 1
- 150000002500 ions Chemical class 0.000 description 63
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 239000004809 Teflon Substances 0.000 description 3
- 229920006362 Teflon® Polymers 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910021607 Silver chloride Inorganic materials 0.000 description 1
- SMEGJBVQLJJKKX-HOTMZDKISA-N [(2R,3S,4S,5R,6R)-5-acetyloxy-3,4,6-trihydroxyoxan-2-yl]methyl acetate Chemical compound CC(=O)OC[C@@H]1[C@H]([C@@H]([C@H]([C@@H](O1)O)OC(=O)C)O)O SMEGJBVQLJJKKX-HOTMZDKISA-N 0.000 description 1
- 229940081735 acetylcellulose Drugs 0.000 description 1
- 229920002301 cellulose acetate Polymers 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000013464 silicone adhesive Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Description
【考案の詳細な説明】
本考案は１本の可撓性を有する管の内部に内部
液およびこの内部液に浸漬した参照電極を収容
し、この管の先端に半導体イオンセンサとイオン
センサ支持体および液絡部を設けたイオン濃度測
定装置に関するものである。[Detailed description of the invention] The present invention accommodates an internal liquid and a reference electrode immersed in this internal liquid inside a single flexible tube, and a semiconductor ion sensor and an ion sensor support at the tip of the tube. The present invention also relates to an ion concentration measuring device provided with a liquid junction.
このような半導体イオンセンサを用いたイオン
濃度測定装置として特開昭56−68429号公報に記
載されたものがある。 An ion concentration measuring device using such a semiconductor ion sensor is described in Japanese Patent Laid-Open No. 56-68429.
第１図ａおよびｂは上記特開昭56−68429号公
報に記載されたイオン濃度測定装置の要部の一例
の構成を示す断面図および側面図である。このイ
オン濃度測定装置１０は、例えばテフロン（登録
商標名）チユーブ、シリコンチユーブ等の可撓性
を有する絶縁管１１の先端部内部に、半導体イオ
ンセンサ１２を、その感応膜１３を絶縁管１１の
先端開口１１Ａに露出させて、支持体１４上に絶
縁部材１５を介して装着して先端部を閉塞したも
のである。絶縁管１１の先端部内には内部液１６
およびこの内部液１６に浸漬した参照電極１７を
設ける。内部液１６としては、0.1モルKClまた
は0.15モルNaCl溶液を用いることができる。ま
た、参照電極１７は、例えば銀／塩化銀で構成
し、絶縁管１１の後端部（図示せず）から挿入し
て、その先端部に位置させる。支持体１４には、
絶縁管１１の先端部に内部液１６および先端開口
１１Ａに連通する液絡部１８を形成する。第１図
ａ，ｂでは、この液絡部１８を細孔１８Ａで構成
している。半導体イオンセンサ１２はその感応膜
１３が液絡部１８側を向くように固定する。半導
体イオンセンサ１２および参照電極１７のそれぞ
れのリード線１２Ａおよび１７Ａは、それぞれ絶
縁被覆し、絶縁管１１内を通してその後端部から
導出させる。なお、絶縁管１１の先端開口１１Ａ
は、半導体イオンセンサ１２を破損から保護する
ため、これよりも若干突出させると共に、例えば
体腔内に容易に挿入できるよう斜めに切り欠いて
形成する。 FIGS. 1A and 1B are a cross-sectional view and a side view showing an example of the configuration of a main part of the ion concentration measuring device described in the above-mentioned Japanese Patent Application Laid-Open No. 56-68429. This ion concentration measuring device 10 includes a semiconductor ion sensor 12 inside the tip of a flexible insulating tube 11 such as a Teflon (registered trademark) tube or a silicon tube, and a sensitive film 13 of the semiconductor ion sensor 12 inside the tip of the insulating tube 11, such as a Teflon tube or a silicon tube. The tip is exposed through the tip opening 11A and mounted on the support 14 with an insulating member 15 interposed therebetween to close the tip. Inside the tip of the insulating tube 11 is an internal liquid 16.
A reference electrode 17 immersed in this internal liquid 16 is provided. As the internal liquid 16, a 0.1 molar KCl or 0.15 molar NaCl solution can be used. Further, the reference electrode 17 is made of silver/silver chloride, for example, and is inserted from the rear end (not shown) of the insulating tube 11 and positioned at the tip thereof. The support body 14 includes
A liquid junction 18 is formed at the tip of the insulating tube 11, which communicates with the internal liquid 16 and the tip opening 11A. In FIGS. 1a and 1b, this liquid junction 18 is composed of pores 18A. The semiconductor ion sensor 12 is fixed so that its sensitive film 13 faces the liquid junction 18 side. Lead wires 12A and 17A of semiconductor ion sensor 12 and reference electrode 17 are respectively coated with insulation, passed through insulating tube 11, and led out from the rear end. In addition, the tip opening 11A of the insulating tube 11
In order to protect the semiconductor ion sensor 12 from damage, it is made to protrude slightly more than this, and is formed by cutting out diagonally so that it can be easily inserted, for example, into a body cavity.
このように構成したイオン濃度測定装置１０を
例えば内視鏡のチヤンネルを通して体腔内に挿入
する場合、しばしば体腔内の圧力が大気圧より高
いことがあり、その結果被検液が液絡部１８を通
して内部液１６側へ流入したり、液絡部１８に気
泡等が入り込むなどして測定が不安定になる。こ
れを防ぐ為、通常イオン濃度測定装置１０の後端
に加圧手段を設ける。 When the ion concentration measuring device 10 configured as described above is inserted into a body cavity through the channel of an endoscope, for example, the pressure inside the body cavity is often higher than atmospheric pressure, and as a result, the test liquid passes through the liquid junction 18. If the liquid flows into the internal liquid 16 or bubbles enter the liquid junction 18, the measurement becomes unstable. To prevent this, a pressurizing means is usually provided at the rear end of the ion concentration measuring device 10.
第２図はこの加圧手段をシリンジ２０によつて
構成した例を示すもので、分岐端２５に摺動自在
にプランジヤ２６を設け、このプランジヤ２６を
押し込んで内部液をイオン濃度測定装置１０先端
の液絡部１８より注出させることにより、安定な
測定を行うようにしている。特開昭56−68429号
公報にはこの他の加圧手段としてゴム球形送風
器、コンプレツサまたはポンプなどについても開
示されている。 FIG. 2 shows an example in which this pressurizing means is constituted by a syringe 20, in which a plunger 26 is slidably provided at the branch end 25, and the plunger 26 is pushed in to release the internal liquid at the tip of the ion concentration measuring device 10. By pouring out the liquid from the liquid junction 18, stable measurements can be performed. JP-A-56-68429 also discloses other pressurizing means such as a rubber spherical blower, a compressor, or a pump.
ところがこのような加圧手段をイオン濃度測定
装置の後端に設けることは構造が複雑になると共
に、例えば内視鏡に挿入して用いる場合にあつて
は内視鏡の操作上これらの加圧手段がじやまにな
る欠点がある。 However, providing such pressurizing means at the rear end of the ion concentration measurement device complicates the structure, and when used by inserting it into an endoscope, for example, these pressurizing means are difficult to operate during operation of the endoscope. The disadvantage is that the means are limited.
本考案の目的はこの欠点を解決するため、上記
したような加圧手段を必要としないイオン濃度測
定装置を得ることである。 The purpose of the present invention is to solve this drawback by providing an ion concentration measuring device that does not require the above-mentioned pressurizing means.
この目的を達成するため、本考案のイオン濃度
測定装置は１本の可撓性を有する管の内部に内部
液およびこの内部液に浸漬した参照電極を収容
し、この管の先端に半導体イオンセンサとイオン
センサ支持体および液絡部を設けたイオン濃度測
定装置において、前記管の先端部近傍の内部に封
鎖部材を設け、この封鎖部材と前記イオンセンサ
支持体と、前記管とにより囲まれる空間に前記内
部液を封鎖したことを特徴とする。 To achieve this purpose, the ion concentration measuring device of the present invention houses an internal liquid and a reference electrode immersed in this internal liquid inside a single flexible tube, and a semiconductor ion sensor is attached to the tip of the tube. In an ion concentration measuring device including an ion sensor support and a liquid junction, a sealing member is provided inside near the tip of the tube, and a space surrounded by the sealing member, the ion sensor support, and the tube. The internal liquid is sealed off.
以下図面を参照して本考案を詳細に説明する。
なお、以下の実施例では内視鏡に挿入して用いる
に好適なイオン濃度測定装置を示すが、本考案は
これに限定されるものではない。 The present invention will be described in detail below with reference to the drawings.
In addition, although the following examples show an ion concentration measuring device suitable for use by being inserted into an endoscope, the present invention is not limited thereto.
第３図は本考案のイオン濃度測定装置の一例の
構成を示す断面図である。 FIG. 3 is a sectional view showing the configuration of an example of the ion concentration measuring device of the present invention.
絶縁管３１Ａ，３１Ｂをテフロン、シリコン等
の可撓性細管により構成する。絶縁管３１Ａの先
端にイオンセンサ支持体３３を収容し、この支持
体３３の内部に半導体イオンセンサ３４をその電
極部が内部液４１や被検液から完全に絶縁隔離さ
れるよう、絶縁部材３６Ａ（例えばシリコン接着
剤、ワツクス類など）によつて固定する。絶縁管
３１Ａとイオンセンサ支持体３３との間隙に親水
性フイルム３５を配置して液絡部を構成する。こ
の親水性フイルム３５には例えば50〜100μｍの
膜厚のアセチルセルロースフイルムを用いるが、
必要に応じて適宜な膜厚のものを用いればよい。
また液絡部は必ずしも親水性フイルム３５に限定
されるものではなくイオンセンサ支持体３３の周
囲または内部に形成した細孔、溝、あるいは多孔
性領域で形成してもよい。絶縁管３１Ａと３１Ｂ
との内側にわたつて参照電極支持体３８を配設
し、この参照電極支持体３８の内側に参照電極３
７をリード線３７Ａとの結線部が内部液４１から
完全に絶縁隔離されるように絶縁部材３６Ｂによ
り固定する、このように構成したイオンセンサ支
持体３３、参照電極支持体３８および絶縁管３１
Ａに囲まれた空間に内部液４１を閉じ込めてイオ
ン濃度測定装置を完成させる訳であるが、内部液
４１の充填は次のように行う。 The insulating tubes 31A and 31B are made of flexible thin tubes made of Teflon, silicone, or the like. An ion sensor support 33 is housed at the tip of the insulating tube 31A, and an insulating member 36A is installed inside the support 33 so that the semiconductor ion sensor 34 is completely insulated and isolated from the internal liquid 41 and the test liquid. Fix with (e.g. silicone adhesive, wax, etc.). A hydrophilic film 35 is placed in the gap between the insulating tube 31A and the ion sensor support 33 to form a liquid junction. For example, an acetyl cellulose film with a thickness of 50 to 100 μm is used as the hydrophilic film 35.
A film having an appropriate thickness may be used as necessary.
Further, the liquid junction is not necessarily limited to the hydrophilic film 35, but may be formed by pores, grooves, or porous regions formed around or inside the ion sensor support 33. Insulation tubes 31A and 31B
A reference electrode support 38 is disposed inside the reference electrode support 38, and the reference electrode 3 is disposed inside the reference electrode support 38.
The ion sensor support 33, the reference electrode support 38, and the insulating tube 31 configured in this manner are fixed by the insulating member 36B so that the connecting portion of the lead wire 37A and the lead wire 37A are completely insulated and isolated from the internal liquid 41.
The ion concentration measuring device is completed by confining the internal liquid 41 in the space surrounded by A, and filling of the internal liquid 41 is performed as follows.
絶縁管３１Ａの先端に、半導体イオンセンサ３
４の固定されたイオンセンサ支持体３３及び親水
性フイルム３５を挿入して絶縁管３１Ａの先端を
閉塞し、後端から内部液４１を充填する。ここで
は0.5MKCl又は0.15MNaCl等を内部液４１として
使用している。次に絶縁管３１Ｂの先端にも、参
照電極３７および半導体イオンセンサのリード線
３４Ａが固定された参照電極支持体３８を、その
長さの半分程度まで挿入して、絶縁管３１Ｂの先
端を閉塞する。次に絶縁管３１Ｂの先端に位置し
ている参照電極３７および支持体３８を絶縁管３
１Ａの後端から挿入して２本の絶縁管３１Ａ，３
１Ｂをつなぎ合わせる。絶縁管接続部４２での気
密性を保つため、絶縁管接続部および内部液注入
部分の周囲を熱収縮チユーブ３２Ｂで覆う。この
実施例では更に、イオン濃度測定装置３０の先端
部の強度を改善すると同時に半導体イオンセンサ
３４の先端を保護する目的で、イオン濃度測定装
置３０の先端部を熱収縮チユーブ３２Ａで覆つて
いる。 A semiconductor ion sensor 3 is installed at the tip of the insulating tube 31A.
The fixed ion sensor support 33 and the hydrophilic film 35 are inserted to close the tip of the insulating tube 31A, and the internal liquid 41 is filled from the rear end. Here, 0.5MKCl or 0.15MNaCl is used as the internal liquid 41. Next, the reference electrode support 38 to which the reference electrode 37 and the lead wire 34A of the semiconductor ion sensor are fixed is inserted into the tip of the insulating tube 31B to about half its length to close the tip of the insulating tube 31B. do. Next, the reference electrode 37 and support body 38 located at the tip of the insulating tube 31B are attached to the insulating tube 31B.
Two insulation tubes 31A, 3 are inserted from the rear end of 1A.
Connect 1B. In order to maintain airtightness at the insulating tube connecting portion 42, the area around the insulating tube connecting portion and the internal liquid injection portion is covered with a heat shrink tube 32B. In this embodiment, the tip of the ion concentration measuring device 30 is further covered with a heat shrink tube 32A in order to improve the strength of the tip of the ion concentration measuring device 30 and at the same time protect the tip of the semiconductor ion sensor 34.
また、内部液４１の注入方法はこの例に限られ
ることなく、例えば絶縁管３１Ａと３１Ｂとを参
照電極支持体３８により接続した後絶縁管３１Ａ
の壁部を通して注射器等で内部液を、イオンセン
サ支持体３３、参照電極支持体３８および絶縁管
３１Ａに囲まれた空間に注入することもできる。
この時この空間内の空気は絶縁管３１Ａと参照電
極支持体３８との隙間から抜ける。内部液４１を
注入後接続部４２を熱収縮チユーブ３２Ｂにより
覆う。 Furthermore, the method of injecting the internal liquid 41 is not limited to this example. For example, after connecting the insulating tubes 31A and 31B with the reference electrode support 38, the insulating tube 31A
The internal liquid can also be injected into the space surrounded by the ion sensor support 33, the reference electrode support 38, and the insulating tube 31A using a syringe or the like through the wall.
At this time, the air in this space escapes through the gap between the insulating tube 31A and the reference electrode support 38. After injecting the internal liquid 41, the connecting portion 42 is covered with a heat shrink tube 32B.
このように、内部液４１をイオン濃度測定装置
３０の先端内部に閉じ込めておけば、内視鏡直視
下で前記イオン濃度測定装置を使用する際に体腔
内の圧力が高くても、その圧力は閉じ込められた
内部液４１全体にかかる為に被検液が内部液側に
流入することもなく、従つてイオン濃度測定装置
３０の後端に、特別な加圧手段を設ける必要もな
い。この結果、イオン濃度測定装置３０の取扱い
が極めて容易になる。 In this way, if the internal fluid 41 is confined inside the tip of the ion concentration measuring device 30, even if the pressure inside the body cavity is high when using the ion concentration measuring device under direct vision of an endoscope, the pressure will be reduced. Since the test liquid is applied to the entire confined internal liquid 41, the test liquid does not flow into the internal liquid side, and therefore there is no need to provide a special pressurizing means at the rear end of the ion concentration measuring device 30. As a result, handling of the ion concentration measuring device 30 becomes extremely easy.
以上のように構成されたイオン濃度測定装置３
０の液絡部では、内部液４１および被検液中のイ
オンが相互に拡散することによつて両者の電気的
な接続状態が保たれる。この結果、イオン濃度測
定装置３０を長期間使用した後には内部液４１を
交換する必要があるが、それには熱収縮チユーブ
３２Ｂを切つて絶縁管３１Ａ，３１Ｂを取りはず
し、古い内部液を取出した後前述したような方法
によつて新しい内部液を封入した後、新しい熱収
縮チユーブをかぶせれば良い。 Ion concentration measuring device 3 configured as above
At the liquid junction of No. 0, the ions in the internal liquid 41 and the test liquid mutually diffuse to maintain the electrical connection between the two. As a result, after using the ion concentration measuring device 30 for a long period of time, it is necessary to replace the internal liquid 41, but to do so, cut the heat shrink tube 32B, remove the insulating tubes 31A and 31B, and take out the old internal liquid. After sealing in new internal liquid using the method described above, a new heat shrink tube may be placed over the tube.
第３図において参照電極支持体３８の後端に設
けた温度補償用ダイオード３９は温度変化を検出
して半導体イオンセンサ３４に必要な温度補償を
行なうものである。 In FIG. 3, a temperature compensation diode 39 provided at the rear end of the reference electrode support 38 detects temperature changes and performs temperature compensation necessary for the semiconductor ion sensor 34.
第４図はこの原理を示す回路図である。 FIG. 4 is a circuit diagram showing this principle.
半導体イオンセンサ４６と直列に温度補償用ダ
イオード４７を接続する。このときダイオード４
７の順方向の電圧Vdは、センサー４６のドレイ
ン電流を一定にして使用すれば、−2.5mv／℃の
温度特性を持つているので、このダイオード４７
の端子間電圧の変化から温度変化を検出し、温度
変化にともなう半導体イオンセンサ４６の零点並
びに感度の補正を行なう。４５は参照電極であ
る。この温度補償用ダイオード４７は第３図にお
いては個別のものを用いたが、これは半導体イオ
ンセンサと共に同一基板上に形成されたものを用
いても何らさしつかえない。また、ダイオードの
代わりに、トランジスタのベース・エミツタ間電
圧の温度変化等を利用しても良い。 A temperature compensation diode 47 is connected in series with the semiconductor ion sensor 46. At this time, diode 4
The forward voltage Vd of diode 47 has a temperature characteristic of -2.5 mv/°C if the drain current of sensor 46 is kept constant.
The temperature change is detected from the change in the voltage between the terminals of the semiconductor ion sensor 46, and the zero point and sensitivity of the semiconductor ion sensor 46 are corrected in accordance with the temperature change. 45 is a reference electrode. Although a separate temperature compensating diode 47 is used in FIG. 3, it may be formed on the same substrate as the semiconductor ion sensor. Further, instead of a diode, temperature changes in the voltage between the base and emitter of a transistor may be used.
第５図は絶縁管接続部の他の例を示す図であ
る。 FIG. 5 is a diagram showing another example of the insulating tube connection section.
イオン濃度測定装置５０の絶縁管５１Ａと５１
Ｂとは第５図ｃに示すようにそれぞれ鍵形に形成
したものを第５図ｂに接続部を拡大して示したよ
うに、かみ合わせて接続し、これにより絶縁管接
続部５２が引張りの力に対してはずれることがな
いように構成したものである。この例においても
第３図の実施例と同様に参照電極５４を保持した
参照電極支持体５５を接続部５２の間にわたつ
て、絶縁管５１Ａと５１Ｂとに延在させる。 Insulating tubes 51A and 51 of the ion concentration measuring device 50
B and B are each formed into a key shape as shown in FIG. 5c, and are connected by interlocking as shown in FIG. It is constructed in such a way that it does not become dislocated due to force. In this example as well, the reference electrode support 55 holding the reference electrode 54 is extended between the connecting portions 52 and into the insulating tubes 51A and 51B, similarly to the embodiment shown in FIG.
このように構成した本考案のイオン濃度測定装
置は内部液をイオン濃度測定装置の先端付近に封
じ込めることにより、内部液の加圧手段の必要が
なく取扱いの極めて容易な装置である。 The ion concentration measuring device of the present invention constructed in this way is an extremely easy-to-handle device that confines the internal liquid near the tip of the ion concentration measuring device, so there is no need for means for pressurizing the internal liquid.
第１図ａおよびｂは従来のイオン濃度測定装置
の構成を示す断面図および側面図、第２図は第１
図に示すイオン濃度測定装置に用いる加圧手段の
構成を示す断面図、第３図は本考案のイオン濃度
測定装置の一例の構成を示す断面図、第４図は第
３図のイオン濃度測定装置に用いた温度補償回路
を示す回路図、第５図は本考案のイオン濃度測定
装置の絶縁管の接続部の他の例を示し、第５図ａ
はその構成図、第５図ｂはその一部拡大図、第５
図ｃはその分解斜視図である。
１０……イオン濃度測定装置、１１……絶縁
管、１１Ａ……開口、１２……半導体イオンセン
サ、１２Ａ，１７Ａ……リード線、１３……感応
膜、１４……支持体、１５……絶縁部材、１６…
…内部液、１７……参照電極、１８……液絡部、
１８Ａ……細孔、２０……シリンジ、２１……絶
縁管、２２，２３……リード線、２４，２５……
分岐端、２６……プランジヤ、２７……内部液、
３０……イオン濃度測定装置、３１Ａ，３１Ｂ…
…絶縁管、３２Ａ，３２Ｂ……熱収縮チユーブ、
３３……イオンセンサ支持体、３４……半導体イ
オンセンサ、３４Ａ……リード線、３５……親水
性フイルム、３６Ａ，３６Ｂ……絶縁部材、３７
……参照電極、３７Ａ……リード線、３８……参
照電極支持体、３９……温度補償用ダイオード、
３９Ａ……リード線、４１……内部液、４２……
絶縁管接続部、４５……参照電極、４６……半導
体イオンセンサ、４７……温度補償用ダイオー
ド、４８……ドレイン端子、４９……ソース端
子、５０……イオン濃度測定装置、５１Ａ，５１
Ｂ……絶縁管、５２……接続部、５３……熱収縮
チユーブ、５４……参照電極、５５……参照電極
支持体。
Figures 1a and b are cross-sectional views and side views showing the configuration of a conventional ion concentration measuring device, and Figure 2 is a
3 is a sectional view showing the configuration of an example of the ion concentration measuring device of the present invention, and FIG. 4 is the ion concentration measuring device shown in FIG. 3. Figure 5 is a circuit diagram showing the temperature compensation circuit used in the device, and shows another example of the connection part of the insulating tube of the ion concentration measuring device of the present invention,
is its configuration diagram, Figure 5b is a partially enlarged diagram, and Figure 5
Figure c is an exploded perspective view thereof. 10... Ion concentration measuring device, 11... Insulating tube, 11A... Opening, 12... Semiconductor ion sensor, 12A, 17A... Lead wire, 13... Sensitive membrane, 14... Support, 15... Insulation Part 16...
... Internal liquid, 17 ... Reference electrode, 18 ... Liquid junction,
18A... Pore, 20... Syringe, 21... Insulating tube, 22, 23... Lead wire, 24, 25...
Branch end, 26... plunger, 27... internal liquid,
30...Ion concentration measuring device, 31A, 31B...
...Insulation tube, 32A, 32B...Heat shrink tube,
33...Ion sensor support, 34...Semiconductor ion sensor, 34A...Lead wire, 35...Hydrophilic film, 36A, 36B...Insulating member, 37
... Reference electrode, 37A ... Lead wire, 38 ... Reference electrode support, 39 ... Temperature compensation diode,
39A... Lead wire, 41... Internal liquid, 42...
Insulating tube connection part, 45... Reference electrode, 46... Semiconductor ion sensor, 47... Temperature compensation diode, 48... Drain terminal, 49... Source terminal, 50... Ion concentration measuring device, 51A, 51
B... Insulating tube, 52... Connection portion, 53... Heat shrink tube, 54... Reference electrode, 55... Reference electrode support.
Claims (1)
この内部液に浸漬した参照電極を収容し、この管
の先端に半導体イオンセンサとイオンセンサ支持
体および液絡部を設けたイオン濃度測定装置にお
いて、前記管の先端部近傍の内部に封鎖部材を設
け、この封鎖部材と前記イオンセンサ支持体と、
前記管とにより囲まれる空間に前記内部液を封鎖
したことを特徴とするイオン濃度測定装置。 An ion concentration measurement method in which an internal liquid and a reference electrode immersed in the internal liquid are housed inside a single flexible tube, and a semiconductor ion sensor, an ion sensor support, and a liquid junction are provided at the tip of the tube. In the apparatus, a sealing member is provided inside near the tip of the tube, and the sealing member and the ion sensor support,
An ion concentration measuring device characterized in that the internal liquid is sealed in a space surrounded by the tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5520380U JPS6145485Y2 (en) | 1980-04-24 | 1980-04-24 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5520380U JPS6145485Y2 (en) | 1980-04-24 | 1980-04-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56157667U JPS56157667U (en) | 1981-11-25 |
| JPS6145485Y2 true JPS6145485Y2 (en) | 1986-12-20 |
Family
ID=29649891
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5520380U Expired JPS6145485Y2 (en) | 1980-04-24 | 1980-04-24 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6145485Y2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6213003Y2 (en) * | 1980-10-06 | 1987-04-03 |
-
1980
- 1980-04-24 JP JP5520380U patent/JPS6145485Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56157667U (en) | 1981-11-25 |
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