JPS6143874B2 - - Google Patents
Info
- Publication number
- JPS6143874B2 JPS6143874B2 JP52129040A JP12904077A JPS6143874B2 JP S6143874 B2 JPS6143874 B2 JP S6143874B2 JP 52129040 A JP52129040 A JP 52129040A JP 12904077 A JP12904077 A JP 12904077A JP S6143874 B2 JPS6143874 B2 JP S6143874B2
- Authority
- JP
- Japan
- Prior art keywords
- surface acoustic
- magnetic flux
- josephson
- josephson junction
- acoustic wave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010897 surface acoustic wave method Methods 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 230000004907 flux Effects 0.000 description 27
- 239000010408 film Substances 0.000 description 8
- 239000010409 thin film Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/195—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using superconductive devices
- H03K19/1952—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using superconductive devices with electro-magnetic coupling of the control current
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Logic Circuits (AREA)
Description
【発明の詳細な説明】
本発明は弾性表面波とジヨセフソン接合を組合
わせた論理素子に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a logic element that combines surface acoustic waves and Josephson junctions.
ジヨセフソン接合中の磁束量子を動かすことを
利用した論理素子にはフラツクスシヤトル
（Flux Shuttle）がある。これにはジヨセフソン
侵入度λJよりもずつと大きな接合中に多数個の
磁束量子をとじこめ多数のアドレスに分割する分
布定数型素子や、λJよりも小さい多数個のジヨ
セフソン接合をインダクタンスで結合して並べた
集中定数型素が考えられている。これらはいずれ
も磁束の存在する位置に外からバイアス電流を流
してシフトレジスタ動作を行なわせる論理素子で
あり、バイアス電流用電極の微細加工を必要とす
る。 A flux shuttle is a logic element that uses the movement of magnetic flux quanta in Josephson junctions. This can be achieved by using a distributed constant type element that confines a large number of magnetic flux quanta in a junction that is larger than the Josephson penetration depth λ J and dividing it into a large number of addresses, or by coupling a large number of Josephson junctions smaller than λ J using inductance. A lumped constant type element arranged as All of these are logic elements that cause a shift register operation to be performed by flowing a bias current from the outside into a position where a magnetic flux exists, and require microfabrication of the bias current electrode.
本発明は弾性表面波によりジヨセフソン接合中
またはジヨセフソン接合アレイ中の磁束量子を音
速で動かして論理動作を行わせるようにしたもの
で、バイアス電流用電極の微細加工が不要とな
り、またビツト密度を向上させた論理素子を提供
するものである。 The present invention uses surface acoustic waves to move magnetic flux quanta in Josephson junctions or Josephson junction arrays at the speed of sound to perform logical operations. This eliminates the need for microfabrication of bias current electrodes and improves bit density. The present invention provides a logic element that has the following functions.
磁束量子を動かす機構は２種類に分類される。
弾性表面波の振動が比較的低い周波数（数10〜数
100メガヘルツ）の場合には、弾性表面波はジヨ
セフソン接合の絶縁膜の厚さ（エル）を変調す
ることにより波状のポテンシヤルを磁束量子に与
える。これを（エル）方式と呼ぶ。一方比較的
高い周波数（１ギガヘルツ以上）の場合には、い
わゆるフオノン誘起エネルギーギヤツプ増
（Phonon−induced enhacement of energy
gap）が生じ、弾性表面波パルスの存在している
部分のエネルギーギヤツプ２Δ（デルタ）が変調
され、パルス状のポテンシヤルを磁束量子に与え
る。これをΔ（デルタ）方式と呼ぶ。 Mechanisms that move magnetic flux quanta are classified into two types.
The vibration of surface acoustic waves has a relatively low frequency (several 10 to several
(100 MHz), the surface acoustic wave imparts a wave-like potential to the magnetic flux quantum by modulating the thickness (L) of the insulating film of the Josephson junction. This is called the (L) method. On the other hand, in the case of relatively high frequencies (above 1 GHz), there is a so-called phonon-induced enhancement of energy gap increase.
gap) occurs, and the energy gap 2Δ (delta) of the portion where the surface acoustic wave pulse exists is modulated, giving a pulse-like potential to the magnetic flux quantum. This is called the Δ (delta) method.
第１図において、１は弾性表面波トランスジユ
ーサでSiやガラスのような基板５上にZnOのよう
な圧電膜２を介して形成される。基板５として圧
電体基板を使用した場合には、圧電薄膜２は不要
である。３はジヨセフソン接合のアレイ、４は信
号検出部としての電極である。 In FIG. 1, a surface acoustic wave transducer 1 is formed on a substrate 5 made of Si or glass with a piezoelectric film 2 made of ZnO interposed therebetween. When a piezoelectric substrate is used as the substrate 5, the piezoelectric thin film 2 is not necessary. 3 is an array of Josephson junctions, and 4 is an electrode as a signal detection section.
ジヨセフソン接合３の詳細を第２図に示す。厚
さのPbOの様な絶縁膜３２がPbのような超電
導金属の薄膜３１，３３でサンドイツチ状にはさ
まれ、その上にSiO2のような絶縁膜３４を介し
て金属線路３５が形成される。７は磁束量子発生
用の定電流電源、８はジヨセフソン接合３の接合
電圧供給用の直流電圧源である。 Details of the Josephson junction 3 are shown in FIG. A thick insulating film 32 such as PbO is sandwiched between thin films 31 and 33 of superconducting metal such as Pb in a sandwich pattern, and a metal line 35 is formed thereon via an insulating film 34 such as SiO2 . Ru. Reference numeral 7 indicates a constant current power supply for generating magnetic flux quantum, and reference numeral 8 indicates a DC voltage source for supplying junction voltage to Josephson junction 3.
直流電圧源８によりジヨセフソン接合３に電圧
Ｖを供給すると、周波数＝2ev／ｈ（ｅ；電子
電荷、ｈ；ブランク定数）の高周波電磁振動が起
る。 When a voltage V is supplied to the Josephson junction 3 by the DC voltage source 8, high-frequency electromagnetic oscillation with a frequency of 2 ev/h (e: electronic charge, h: Blank constant) occurs.
一方、定電流電源７により金属線路３５に臨界
ジヨセフソン電流Icより小さい直流電流Idcを供
給して磁場を発生させると、ジヨセフソン素子２
の絶縁膜３２が電磁波のキヤビテイとして動作
し、そのＱ値が高いので周波数の電磁波のパワ
ーが内部にとじこめられる。このＱ値はジヨセフ
ソン素子２に外部から加えられた磁場で制御され
る。この状態で弾性表面波による波状ポテンシヤ
ルが来ると、絶縁膜３２の膜厚が大きくなつた
り小さくなつたりし、これにつれて臨界ジヨセフ
ソン電流Icも最大値Idc maxと最小値Idc minの
間を大きくなつたり小さくなつたりする。そこ
で、Ic＞Idc＞Idc minとなるようにIdcを設定す
ると、音波によりつくられる波状ポテンシヤルは
音速で動き、ジヨセフソン接合の形をした伝送線
にとじこめられていた磁束量子がこの波状ポテン
シヤルにとらえられて音速で動き出す。すなわ
ち、弾性表面波トランスジユーサ１によつて発生
した弾性表面波ジヨセフソン接合アレイ３の直下
に伝搬してきたとき、それに同期して、定電流源
７によつて各接合にデイジタル信号に対応させて
磁束量子の１または０を与えると、弾性表面波の
波長が各接合間の距離に等しい時、波状ポテンシ
ヤルに磁束量子をとらえ、音速で検出器４に運
ぶ。 On the other hand, when a constant current power supply 7 supplies a direct current Idc smaller than the critical Josephson current Ic to the metal line 35 to generate a magnetic field, the Josephson element 2
The insulating film 32 acts as a cavity for electromagnetic waves, and since its Q value is high, the power of the electromagnetic waves of the frequency is confined inside. This Q value is controlled by a magnetic field applied to the Josephson element 2 from the outside. When a wavy potential due to surface acoustic waves occurs in this state, the thickness of the insulating film 32 increases or decreases, and accordingly, the critical Josephson current Ic also increases between the maximum value Idc max and the minimum value Idc min. It gets smaller. Therefore, if Idc is set so that Ic > Idc > Idc min, the wavy potential created by the sound wave moves at the speed of sound, and the magnetic flux quantum trapped in the Josephson junction-shaped transmission line is captured by this wavy potential. It starts moving at the speed of sound. That is, when the surface acoustic wave generated by the surface acoustic wave transducer 1 propagates directly below the Josephson junction array 3, the constant current source 7 causes each junction to correspond to a digital signal in synchronization with the propagation. When a magnetic flux quantum of 1 or 0 is given, when the wavelength of the surface acoustic wave is equal to the distance between each junction, the magnetic flux quantum is captured by the wavy potential and transported to the detector 4 at the speed of sound.
この結果、検出器４より磁束量子に対応した
１，０のデイジタル信号を読み出すことができ
る。 As a result, a digital signal of 1 and 0 corresponding to the magnetic flux quantum can be read out from the detector 4.
この場合、ジヨセフソン接合３の相互の距離お
よびジヨセフソン接合３と磁束検出器４間の距離
が磁場侵入長よりも小さければ磁束量子はとらえ
られ移動してゆく。一方これらの距離が磁場侵入
長より大きい場合には２つの超伝導線で絶縁体を
はさんだ磁束量子伝送線を用いることにより移動
させることができる。 In this case, if the distance between the Josephson junctions 3 and the distance between the Josephson junctions 3 and the magnetic flux detector 4 are smaller than the magnetic field penetration length, the magnetic flux quanta will be captured and moved. On the other hand, if these distances are larger than the magnetic field penetration length, the movement can be achieved by using a magnetic flux quantum transmission line in which an insulator is sandwiched between two superconducting wires.
一方Δ方式の場合は、弾性表面波トランスジユ
ーサからの弾性表面波パルスがジヨセフソン接合
に直下に伝播してきたときに磁束量子を与える
と、弾性表面波パルス状ポテンシヤルの底に磁束
量子がとらえられ、音束で検出器４に運ばれる。 On the other hand, in the case of the Δ method, if a magnetic flux quantum is applied when the surface acoustic wave pulse from the surface acoustic wave transducer propagates directly below the Josephson junction, the magnetic flux quantum is captured at the bottom of the surface acoustic wave pulse potential. , is carried to the detector 4 in a sound bundle.
ジヨセフソン接合としてはアレイの他の多数の
磁束量子を含む長いジヨセフソン接合を使用する
こともできる。 The Josephson junction can also be a long Josephson junction containing many other flux quanta in the array.
以上のように、本発明は０または少数の磁束量
子を含む短いジヨセフソン接合アレイまたは多数
の磁束量子を含む長いジヨセフソン接合と、弾性
表面波トランスジユーサ、磁束検出器を基板上に
設け、ジヨセフソン接合部の下に弾性表面波の波
状またはパルス状ポテンシヤルを与え、このポテ
ンシヤルにジヨセフソン接合からの磁束量子をと
らえ、これを音束で磁束検出器に運ぶようにした
新規な論理素子を提供するものである。 As described above, the present invention provides a short Josephson junction array containing zero or a small number of magnetic flux quanta or a long Josephson junction containing a large number of magnetic flux quanta, a surface acoustic wave transducer, a magnetic flux detector, and the like, which are provided on a substrate. The present invention provides a novel logic element in which a wave-like or pulse-like potential of a surface acoustic wave is provided under the section, a magnetic flux quantum from a Josephson junction is captured by this potential, and this is carried to a magnetic flux detector as an acoustic flux. be.
このような構成によれば、磁束量子を動かすた
めの微細電極が不要となり、またビツト密度の高
い論理素子を得ることができる。 With such a configuration, there is no need for fine electrodes for moving magnetic flux quanta, and a logic element with high bit density can be obtained.
第１図は本発明の実施例を示す断面側面図、第
２図は第１図の部分拡大説明図である。
１……弾性表面波トランスジユーサ、２……圧
電薄膜、３……ジヨセフソン接合、４……磁束検
出器、５……基板、７……定電流源、８……直流
電圧源、３１，３３……超電導金属薄膜、３２…
…絶縁膜、３４……絶縁膜、３５……金属線路。
FIG. 1 is a cross-sectional side view showing an embodiment of the present invention, and FIG. 2 is a partially enlarged explanatory view of FIG. 1. DESCRIPTION OF SYMBOLS 1... Surface acoustic wave transducer, 2... Piezoelectric thin film, 3... Josephson junction, 4... Magnetic flux detector, 5... Substrate, 7... Constant current source, 8... DC voltage source, 31, 33...Superconducting metal thin film, 32...
...insulating film, 34...insulating film, 35...metal line.
Claims (1)
手段および電極を配し、両者の中間に磁場発生手
段を具備するジヨセフソン接合またはそのアレイ
を形成したことを特徴とする論理素子。 ２ 弾性表面波が波状である特許請求の範囲第１
項記載の論理素子。 ３ 弾性表面波がパルス状である特許請求の範囲
第１項記載の論理素子。 ４ 磁場発生手段がジヨセフソン接合上に絶縁膜
を介して形成された金属線路である特許請求の範
囲第１項記載の論理素子。[Scope of Claims] 1. A device characterized in that a means for generating a surface acoustic wave and an electrode are arranged on a substrate at a distance from each other, and a Josephson junction or an array thereof is formed with a means for generating a magnetic field between the two. A logical element that 2 Claim 1 in which the surface acoustic waves are wavy
Logic elements described in section. 3. The logic element according to claim 1, wherein the surface acoustic waves are pulsed. 4. The logic element according to claim 1, wherein the magnetic field generating means is a metal line formed on the Josephson junction via an insulating film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12904077A JPS5461864A (en) | 1977-10-26 | 1977-10-26 | Logical element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12904077A JPS5461864A (en) | 1977-10-26 | 1977-10-26 | Logical element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5461864A JPS5461864A (en) | 1979-05-18 |
| JPS6143874B2 true JPS6143874B2 (en) | 1986-09-30 |
Family
ID=14999603
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12904077A Granted JPS5461864A (en) | 1977-10-26 | 1977-10-26 | Logical element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5461864A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0812935B2 (en) * | 1988-02-09 | 1996-02-07 | 日本電気株式会社 | Superconductor electronic device |
| US10415873B2 (en) | 2017-12-08 | 2019-09-17 | Electrolux Home Products, Inc. | Dual asymmetrical and symmetrical architecture cantilever positioning |
-
1977
- 1977-10-26 JP JP12904077A patent/JPS5461864A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5461864A (en) | 1979-05-18 |
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