JPS6141080B2 - - Google Patents

Info

Publication number
JPS6141080B2
JPS6141080B2 JP54020418A JP2041879A JPS6141080B2 JP S6141080 B2 JPS6141080 B2 JP S6141080B2 JP 54020418 A JP54020418 A JP 54020418A JP 2041879 A JP2041879 A JP 2041879A JP S6141080 B2 JPS6141080 B2 JP S6141080B2
Authority
JP
Japan
Prior art keywords
address
memory
information
cell
defective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54020418A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55113200A (en
Inventor
Atsushi Nigorikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP2041879A priority Critical patent/JPS55113200A/ja
Publication of JPS55113200A publication Critical patent/JPS55113200A/ja
Publication of JPS6141080B2 publication Critical patent/JPS6141080B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Testing Of Individual Semiconductor Devices (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
JP2041879A 1979-02-22 1979-02-22 Checking method for ic memory Granted JPS55113200A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2041879A JPS55113200A (en) 1979-02-22 1979-02-22 Checking method for ic memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2041879A JPS55113200A (en) 1979-02-22 1979-02-22 Checking method for ic memory

Publications (2)

Publication Number Publication Date
JPS55113200A JPS55113200A (en) 1980-09-01
JPS6141080B2 true JPS6141080B2 (zh) 1986-09-12

Family

ID=12026478

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2041879A Granted JPS55113200A (en) 1979-02-22 1979-02-22 Checking method for ic memory

Country Status (1)

Country Link
JP (1) JPS55113200A (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57164497A (en) * 1981-03-31 1982-10-09 Toshiba Corp Controlling device of address fail memory
JPS6050698A (ja) * 1983-08-26 1985-03-20 Mitsubishi Electric Corp 半導体試験装置
JPS60106100A (ja) * 1983-11-15 1985-06-11 Fujitsu Ltd 半導体メモリの試験方法
EP0424612A3 (en) * 1989-08-30 1992-03-11 International Business Machines Corporation Apparatus and method for real time data error capture and compression for redundancy analysis of a memory
JP2007172778A (ja) * 2005-12-26 2007-07-05 Nec Electronics Corp メモリテスト回路及びメモリテスト方法

Also Published As

Publication number Publication date
JPS55113200A (en) 1980-09-01

Similar Documents

Publication Publication Date Title
US7200786B2 (en) Built-in self-analyzer for embedded memory
US7966531B2 (en) Memory diagnosis apparatus
US20090172483A1 (en) On-chip failure analysis circuit and on-chip failure analysis method
CN110120242A (zh) 存储器测试方法、装置、计算机设备以及存储介质
KR100297709B1 (ko) 다수개의메모리뱅크를구비하는반도체메모리장치의테스트방법및반도체메모리테스트장비
JP3811528B2 (ja) 多重ビットテスト用のメモリテストシステム
JP3871384B2 (ja) 半導体メモリ試験装置用不良解析メモリ
US6288955B1 (en) Methods and systems for testing integrated circuit memory devices by overlappiing test result loading and test result analysis
JPS63241791A (ja) 半導体記憶装置
JP4514028B2 (ja) 故障診断回路及び故障診断方法
JPS6141080B2 (zh)
JP2002504255A (ja) メモリセルを有する装置およびメモリセルの機能検査のための方法
KR100212599B1 (ko) 메모리 시험장치
KR20010107716A (ko) 반도체 디바이스 시험장치
KR20020001764A (ko) 반도체 메모리 시험 장치
JP2004086996A (ja) メモリテスト回路
JP2865035B2 (ja) 半導体記憶装置の試験方法
JP4185642B2 (ja) 半導体メモリ試験装置
JP4664535B2 (ja) 半導体デバイス試験装置
KR100253707B1 (ko) 반도체 메모리소자의 테스트장치 및 방법
JP2002278849A (ja) 半導体試験装置
JPS6131499B2 (zh)
JPH0628896A (ja) Bistによるメモリのテスト方法
JP2003007090A (ja) メモリの不良救済解析方法・メモリ試験装置
JPS5816559B2 (ja) 半導体記憶装置の検査装置および検査方法