JPS6140034B2 - - Google Patents
Info
- Publication number
- JPS6140034B2 JPS6140034B2 JP2203181A JP2203181A JPS6140034B2 JP S6140034 B2 JPS6140034 B2 JP S6140034B2 JP 2203181 A JP2203181 A JP 2203181A JP 2203181 A JP2203181 A JP 2203181A JP S6140034 B2 JPS6140034 B2 JP S6140034B2
- Authority
- JP
- Japan
- Prior art keywords
- reaction
- gas
- film
- substrate
- quartz
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000006243 chemical reaction Methods 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 12
- 238000006552 photochemical reaction Methods 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 230000004913 activation Effects 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 18
- 239000010453 quartz Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 239000012071 phase Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 239000012808 vapor phase Substances 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000004031 devitrification Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006023 eutectic alloy Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- VSQYNPJPULBZKU-UHFFFAOYSA-N mercury xenon Chemical compound [Xe].[Hg] VSQYNPJPULBZKU-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/12—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
- B01J19/122—Incoherent waves
- B01J19/123—Ultra-violet light
Description
本発明は、気相から基板表面に光化学反応によ
り生成した物質の被膜を成長させる、いわゆる光
気相成長装置に関し、主として光気相化学成長
（以下光CVDと称する）Si3N4膜の形成方法を対
象とする。
トランジスタやICのごとき半導体装置の製造
において、半導体基板上にSi3N4膜のごとき窒化
膜やアモルフアスSi膜を形成するのに気相化学反
応を進行させるために、半導体基板等を炉中にお
いて直接加熱する方法、すなわち、熱エネルギー
によつて反応させる物質を気相で熱分解させ、同
時に基板上に被膜を成長させるようにしていた。
上記の加熱手段として、赤外線ランプ、高周波加
熱、あるいは電気抵抗加熱等の方法が利用されて
いた。
しかしながら、このような加熱を化学反応の主
要条件とする方法では、かなりの高温度で行なう
ために、例えば金属フレームに組立てられたトラ
ンジスタ上にSi3N4膜を被覆する場合、シリコ
ン・チツプと金属フレームとを接着せるAn―Si
共晶合金等の融点（400℃）をはるかに越える温
度を必要とし、適用が不可能であつた。
ところで、特公昭39−2426号公報によれば、広
い意味で気相化学反応法の一つにあるエピタキシ
ヤル法により半導体基体上に単結晶半導体層を形
成する方法において、半導体基体を加熱体により
加熱しながら紫外線を反応する物質にあてること
により、反応を300℃程低温で行なえることが記
載されている。Si半導体基板上にSi3N4膜を形成
する場合に、CVD法によればモノシラン
（SiH4）とアンモニア（NH3）を用いてSi3N4膜を
600℃程度で生成することができ、石英反応管内
で上記反応を紫外線照射しながら行なうと、100
℃〜300℃の基板加熱温度で低温のSi3N4膜形成が
可能となる。
しかし、上記紫外線照射によるSi3N4（CVD膜
形成法では、石英反応管にもSi3N4膜が徐々に堆
積し、石英反応管の紫外線透過率を徐々に低下さ
せる欠点を有する。そこで、前述の光CVD法に
おいて、反応ガスの紫外線による活性化領域と
CVD膜形成のための反応領域とを分離し、その
間をパイプで連結することにより、上記CVD反
応による石英部失透による反応速度の低下を防ぐ
ことが可能であると考え、本発明が生まれたので
ある。
よつて、本発明の目的は、気相化学成長膜を低
温で安定に反応させる装置を提供することであ
る。
上記目的を達成するための基本的な装置構成
は、気相から基体表面に光化学反応により生成す
る物質を沈着させる装置において、光によりガス
を活性化する部分と、該ガス活性化部分から活性
化ガスを導出する部分と、該活性化ガスを気相反
応させ基板表面に膜形成させる反応部分とを具備
せる装置であることを特徴とする。
以下、実施例にそつて具体的に説明する。
第１図において、本発明による光気相化学成長
法のための装置が示され、２つの導入によりアン
モニア（NH3）ガスとモノシラン（SiH4）ガスが導
入され、コツク１，１′および流量計２，２′を通
つてガス活性化部分３，３′に送られる。ガス活
性化領域は、その光導入部窓４，４′が石英で構
成され、他の領域はステンレス等で構成された容
器となつている。石英窓４，４′へは、Xe―Hg
（キセノン―水銀）ランプ５から2000〜2200Åの
光が照射されることにより、
The present invention relates to a so-called photovapor phase growth apparatus that grows a film of a substance generated by a photochemical reaction on the surface of a substrate from the gas phase, and is mainly used for forming a Si 3 N 4 film by photochemical vapor deposition (hereinafter referred to as photoCVD). Target method. In the manufacture of semiconductor devices such as transistors and ICs, semiconductor substrates are placed in a furnace in order to proceed with a gas phase chemical reaction to form a nitride film such as a Si 3 N 4 film or an amorphous Si film on the semiconductor substrate. Direct heating was used, that is, thermal energy was used to thermally decompose the reacting substance in the gas phase, and at the same time, a film was grown on the substrate.
As the above heating means, methods such as an infrared lamp, high frequency heating, or electric resistance heating have been used. However, in such a method in which heating is the main condition for the chemical reaction, the temperature is quite high, so when coating a Si 3 N 4 film on a transistor assembled on a metal frame, for example, the silicon chip and An-Si that can be bonded to metal frames
It required temperatures far exceeding the melting point (400°C) of eutectic alloys, etc., making it impossible to apply. By the way, according to Japanese Patent Publication No. 39-2426, in a method of forming a single crystal semiconductor layer on a semiconductor substrate by the epitaxial method, which is one of the vapor phase chemical reaction methods in a broad sense, the semiconductor substrate is heated by a heating body. It is stated that the reaction can be carried out at temperatures as low as 300°C by exposing the reacting substance to ultraviolet rays while heating. When forming a Si 3 N 4 film on a Si semiconductor substrate, the CVD method uses monosilane (SiH 4 ) and ammonia (NH 3 ) to form the Si 3 N 4 film.
It can be produced at around 600℃, and if the above reaction is carried out in a quartz reaction tube while irradiating ultraviolet rays, 100
It is possible to form a low-temperature Si 3 N 4 film at a substrate heating temperature of ℃ to 300 ℃. However, the Si 3 N 4 (CVD film formation method) by ultraviolet irradiation has the drawback that the Si 3 N 4 film is gradually deposited on the quartz reaction tube as well, which gradually reduces the ultraviolet transmittance of the quartz reaction tube. , in the photo-CVD method mentioned above, the activated region of the reactive gas by ultraviolet rays and
The present invention was created based on the idea that by separating the reaction area for CVD film formation and connecting the area with a pipe, it is possible to prevent the reaction rate from decreasing due to the devitrification of the quartz part caused by the CVD reaction. It is. Therefore, an object of the present invention is to provide an apparatus that stably reacts a vapor-phase chemically grown film at low temperatures. The basic configuration of an apparatus for achieving the above purpose is to deposit a substance generated by a photochemical reaction from the gas phase onto the surface of a substrate. The apparatus is characterized in that it is equipped with a part for deriving a gas, and a reaction part for causing a vapor phase reaction of the activated gas to form a film on the surface of the substrate. Hereinafter, a detailed description will be given along with examples. In FIG. 1, an apparatus for photochemical vapor deposition according to the present invention is shown, in which ammonia (NH 3 ) gas and monosilane (SiH 4 ) gas are introduced by two introductions, and the flow rate is The gas is sent to the gas activation section 3, 3' through a total of 2, 2'. In the gas activation region, the light introduction windows 4, 4' are made of quartz, and the other region is a container made of stainless steel or the like. For quartz windows 4 and 4', use Xe-Hg
By irradiating light of 2000 to 2200 Å from the (xenon-mercury) lamp 5,
【表】
の反応によつてSiH4とNH3はそれぞれ活性なSiH3
ガス、NH2ガスとなり、パイプ６，６′を通つて
反応部７へ導入される。反応部７は、ステンレス
や石英等の容器で構成され、ヒーター９で100℃
程度に加熱されたSiウエーハ８上に、
３・SiH3＋４・NH2＋７・Ｈ〓〓Si3N4＋12H2
↑
の反応によつてSi3N4膜が形成され、残ガスは排
気口１０より排出される。
以上の実施例で述べたような本発明によれば、
下記のようにその目的が達成できる。
Xe―Hgランプにより活性化された個々のガス
は活性部の石英窓に反応物を生成することがな
く、絶えず同一の光透過条件でガスが活性化さ
れ、且つ化学反応は反応部のみで低温で進行させ
ることができる。
本発明によれば安定な光化学反応を行なうこと
ができ、量産性にすぐれ、連絡処理も可能とする
業の効果がもたらされる。[Table] SiH 4 and NH 3 each become active SiH 3 by the reaction
The resulting gas becomes NH 2 gas and is introduced into the reaction section 7 through the pipes 6 and 6'. The reaction section 7 consists of a container made of stainless steel or quartz, and is heated to 100°C by a heater 9.
3・SiH 3 +4・NH 2 +7・H〓〓Si 3 N 4 +12H 2
A Si 3 N 4 film is formed by the reaction ↑, and the remaining gas is exhausted from the exhaust port 10. According to the present invention as described in the above embodiments,
The purpose can be achieved as follows. The individual gases activated by the Xe-Hg lamp do not generate reactants in the quartz window of the active part, and the gases are constantly activated under the same light transmission conditions, and the chemical reaction takes place only in the reaction part at a low temperature. It can be proceeded with. According to the present invention, a stable photochemical reaction can be carried out, and the advantages of being excellent in mass productivity and enabling continuous processing are brought about.
第１図は本発明の一実施形態を示す光化学反応
装置原理を示す構成図である。
１…バルブ、２…流量計、３…活性化部、４…
石英窓、５…Xe―Hgランプ、６…パイプ、７…
反応部、８…基体、９…ヒーター、１０排ガス
口。
FIG. 1 is a configuration diagram showing the principle of a photochemical reaction device according to an embodiment of the present invention. 1... Valve, 2... Flowmeter, 3... Activation part, 4...
Quartz window, 5...Xe-Hg lamp, 6...pipe, 7...
reaction section, 8...substrate, 9...heater, 10 exhaust gas port.
Claims (1)
物質の被膜を沈着するにあたり、上記化学反応を
進行させるためにあらかじめガス体に光照射を行
ないガス体の活性化を行なう部分と、該活性化ガ
ス体を誘導する導通部と、該導通部の終端に活性
化ガスによる化学反応を行なう反応部とを具備す
ることを特徴とする光化学反応装置。1. When depositing a film of a substance generated by a chemical reaction on the surface of a substrate from a gas phase, a part where the gas body is activated by irradiating the gas body with light in order to advance the chemical reaction, and the activation gas. 1. A photochemical reaction device comprising: a conduction section that guides the body; and a reaction section that performs a chemical reaction using an activated gas at the end of the conduction section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2203181A JPS57136932A (en) | 1981-02-17 | 1981-02-17 | Photochemical reaction device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2203181A JPS57136932A (en) | 1981-02-17 | 1981-02-17 | Photochemical reaction device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57136932A JPS57136932A (en) | 1982-08-24 |
| JPS6140034B2 true JPS6140034B2 (en) | 1986-09-06 |
Family
ID=12071601
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2203181A Granted JPS57136932A (en) | 1981-02-17 | 1981-02-17 | Photochemical reaction device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57136932A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06181423A (en) * | 1992-12-14 | 1994-06-28 | Kawasaki Steel Corp | Digital filter |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5982720A (en) * | 1982-11-02 | 1984-05-12 | Nec Corp | Optical vapor growth method |
| JPS59182520A (en) * | 1983-04-01 | 1984-10-17 | Hitachi Ltd | Optical cvd method |
| JP4690148B2 (en) * | 2005-09-01 | 2011-06-01 | 株式会社アルバック | Organic thin film manufacturing method and photo-CVD apparatus |
-
1981
- 1981-02-17 JP JP2203181A patent/JPS57136932A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06181423A (en) * | 1992-12-14 | 1994-06-28 | Kawasaki Steel Corp | Digital filter |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57136932A (en) | 1982-08-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4421592A (en) | Plasma enhanced deposition of semiconductors | |
| JPS5747706A (en) | Lump of silicon nitride containing ti and its manufacture | |
| US4501769A (en) | Method for selective deposition of layer structures consisting of silicides of HMP metals on silicon substrates and products so-formed | |
| JPH02302027A (en) | Selective growth method for amorphous or polycrystalline silicon | |
| JPS6140035B2 (en) | ||
| JPS6043485A (en) | Formation of amorphous silicon film | |
| JPS6054919B2 (en) | low pressure reactor | |
| JPH02258689A (en) | Method for forming crystalline thin film | |
| JPS6140034B2 (en) | ||
| US4609424A (en) | Plasma enhanced deposition of semiconductors | |
| JPS61149477A (en) | Formation of boron nitride film | |
| JPS5953674A (en) | Chemical vapor deposition method | |
| US3152932A (en) | Reduction in situ of a dipolar molecular gas adhering to a substrate | |
| JPS6138269B2 (en) | ||
| JPS61127119A (en) | Method of growing silicon crystal | |
| JPS6225256B2 (en) | ||
| JPH0360918B2 (en) | ||
| JP2618408B2 (en) | Manufacturing method of single crystal alloy film | |
| JPS5921863Y2 (en) | Reaction tube for vapor phase growth | |
| JPS6086274A (en) | Preparation of polycrystalline silicon film | |
| JPH0547519B2 (en) | ||
| JPS6057507B2 (en) | Manufacturing equipment and method for manufacturing ultra-hard high-purity silicon nitride | |
| JPS5988307A (en) | Manufacture of product coated with silicon carbide | |
| JPS5493357A (en) | Growing method of polycrystal silicon | |
| JPS60106969A (en) | Optical cvd apparatus |