JPS6136976A - Manufacture of semiconductor memory device - Google Patents
Manufacture of semiconductor memory deviceInfo
- Publication number
- JPS6136976A JPS6136976A JP15966284A JP15966284A JPS6136976A JP S6136976 A JPS6136976 A JP S6136976A JP 15966284 A JP15966284 A JP 15966284A JP 15966284 A JP15966284 A JP 15966284A JP S6136976 A JPS6136976 A JP S6136976A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- silicon
- silicon oxide
- film
- silicon nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 24
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 39
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 26
- 238000010438 heat treatment Methods 0.000 claims abstract description 15
- 239000001257 hydrogen Substances 0.000 claims abstract description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 10
- -1 hydrogen ions Chemical class 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- 229910052782 aluminium Inorganic materials 0.000 abstract description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 3
- LPQOADBMXVRBNX-UHFFFAOYSA-N ac1ldcw0 Chemical compound Cl.C1CN(C)CCN1C1=C(F)C=C2C(=O)C(C(O)=O)=CN3CCSC1=C32 LPQOADBMXVRBNX-UHFFFAOYSA-N 0.000 abstract description 2
- 230000014759 maintenance of location Effects 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000006866 deterioration Effects 0.000 description 4
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、ＭＯＮＯ３（金属−酸化シリコン膜−窒化シ
リコン膜−酸化シリコン膜−半導体）型の電界トランジ
スタから成る半導体記憶装置の製造方法に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for manufacturing a semiconductor memory device comprising a MONO3 (metal-silicon oxide film-silicon nitride film-silicon oxide film-semiconductor) type field transistor. .
２１＼ 。21＼.
従来例の構成とその問題点
従来より半導体記憶装置の１つとして、薄い酸化シリコ
ン膜上に窒化シリコン膜を成長させ、その上に金属電極
を形成したＭＮＯＳ（金属−窒化シリコン膜−酸化シリ
コン膜−半導体）構造の半導体装置がよく知られている
。このＭＮＯ８型半導体記憶装置のプログラム電圧の低
電圧化を実現するために、ゲート絶縁膜のうち窒化シリ
コン膜を薄膜化すると同時に、この窒化シリコン膜を熱
酸化して、窒化シリコン膜上に酸化シリコン膜を形成し
た、いわゆる、ＭＯＮＯ８（金属−酸化シリコン膜−窒
化シリコン膜−酸化シリコン膜−半導体）構造の半導体
記憶装置が知られている。Conventional Structure and Problems Traditionally, as a semiconductor memory device, MNOS (metal-silicon nitride film-silicon oxide film) is a semiconductor memory device in which a silicon nitride film is grown on a thin silicon oxide film and a metal electrode is formed on the silicon nitride film. - Semiconductor devices with a semiconductor structure are well known. In order to reduce the programming voltage of this MNO8 type semiconductor memory device, the silicon nitride film of the gate insulating film is made thinner, and at the same time, this silicon nitride film is thermally oxidized to form silicon oxide on the silicon nitride film. A semiconductor memory device having a so-called MONO8 (metal-silicon oxide film-silicon nitride film-silicon oxide film-semiconductor) structure in which a film is formed is known.
しかしながら、このＭＯＮＯＳ構造の半導体記憶装置は
、その製造方法において、窒化ンリコン膜を熱酸化する
際に、通常９Ｑ○°Ｃ以上の高温を−必要とするので、
窒化シリコン膜質が変化し、不ＭＯＮＯ５型の半導体記
憶装置は、従来のＭＮＯＳ型の半導体記憶装置と同様、
窒化シリコン膜と極薄の酸化シリコン膜の界面、又は窒
化シリコン膜バルク中に分布するトラップに、半導体側
から極薄の酸化シリコン膜を介して行なわれる電荷のト
ンネリング注入と、その蓄積によりトランジスタのしき
い値電圧（Ｖｔｈ ）を変化させ、情報を記憶させるも
のである。従って、その記憶保持特性の確保が最大の課
題であり、窒化シリコン膜上を熱酸化する場合の記憶保
持特性の悪化は最大の問題となっている。However, in the manufacturing method of this MONOS structure semiconductor memory device, a high temperature of 9Q°C or higher is usually required when thermally oxidizing the silicon nitride film.
The quality of the silicon nitride film has changed, and non-MONO5 type semiconductor memory devices are similar to conventional MNOS type semiconductor memory devices.
The tunneling injection of charge from the semiconductor side through the ultra-thin silicon oxide film and its accumulation into the traps distributed at the interface between the silicon nitride film and the ultra-thin silicon oxide film or in the bulk of the silicon nitride film cause the transistor to become The threshold voltage (Vth) is changed to store information. Therefore, ensuring the memory retention characteristics is the biggest challenge, and deterioration of the memory retention characteristics when thermally oxidizing the silicon nitride film is the biggest problem.
発明の目的
不発明の目的は、ＭＯＮＯ８型電界トランジスタからな
る半導体記憶装置における不揮発性能、特に記憶保持特
性の優れた高性能の半導体記憶装置の製造方法を提供す
ることである。OBJECTS OF THE INVENTION An object of the invention is to provide a method for manufacturing a high-performance semiconductor memory device having excellent non-volatile performance, particularly memory retention characteristics, in a semiconductor memory device made of MONO8 type field transistors.
発明の構成
上記目的を達成するために、本発明は、窒化シ・リコン
膜上に第２の酸化シリコン膜を形成した後・に、水素イ
オンを注入し、さらに窒化シリコン膜の形成温度と同じ
温度で熱処理することを特徴とするものである。Structure of the Invention In order to achieve the above object, the present invention involves implanting hydrogen ions after forming a second silicon oxide film on a silicon nitride film, and further increasing the temperature at the same temperature as that of the silicon nitride film. It is characterized by heat treatment at high temperatures.
窒化シリコン膜の熱酸化による記憶保持時ｆ１の悪化は
、窒化シリコン膜中に含腫れる水素、特に５ｉ−Ｈ結合
の含有量に関係があり、Ｓｉ Ｈ結合の多い窒化シリ
コン膜は９ｏ○°Ｃ以上の温度で熱酸化を行なうことに
より、５ｉ−Ｈ結合が少なく々す、不安定なトラップが
増加し、記憶保持特性が悪化する。即ち、窒化シリコン
膜の熱酸化による記憶保持特性の悪化は、窒化シリコン
膜形成の際の水素含有量に大きく依存している。The deterioration of f1 during memory retention due to thermal oxidation of the silicon nitride film is related to the hydrogen contained in the silicon nitride film, especially the content of 5i-H bonds. By performing thermal oxidation at a temperature above, the number of 5i-H bonds decreases, unstable traps increase, and memory retention characteristics deteriorate. That is, deterioration in memory retention characteristics due to thermal oxidation of a silicon nitride film largely depends on the hydrogen content during formation of the silicon nitride film.
本発明は、トンネリング媒体となり得る極薄の第１の酸
化シリコン膜」―に窒化シリコン膜、続いて第２の酸化
シリコン膜を形成した後に、水素イオンを注入し、さら
に窒化シリコン膜形成温度と同じ温度で熱処理を行なう
ことによって優れた記憶保持特性を得ることができるも
のである。In the present invention, after forming a silicon nitride film and then a second silicon oxide film on an ultra-thin first silicon oxide film that can serve as a tunneling medium, hydrogen ions are implanted, and the silicon nitride film forming temperature is further increased. Excellent memory retention characteristics can be obtained by performing heat treatment at the same temperature.
実施例の説明
次に本発明の具体的な実施例を図面を用いて説ものであ
る。第１図（２Ｌ）に示すようにＮ型のシリコン基板１
に、ソース領域２．ドレイン領域３を周知の選択拡散技
術で形成し、選択拡散時に形成した酸化シリコン膜４の
所定の部分を既知のフォトエツチングで開孔した後、こ
の開孔部分に２０Ａ程度の酸化シリコン膜５をｓ ｏ
Ｏ’Ｃ、酸素雰囲気中で形成した。DESCRIPTION OF EMBODIMENTS Next, specific embodiments of the present invention will be explained with reference to the drawings. As shown in FIG. 1 (2L), an N-type silicon substrate 1
In the source area 2. The drain region 3 is formed by a well-known selective diffusion technique, and a predetermined part of the silicon oxide film 4 formed during the selective diffusion is opened by known photoetching, and then a silicon oxide film 5 of about 20 Å is deposited in the opened part. so
O'C, formed in an oxygen atmosphere.
次いで、第１図（ｂ）に示すように、酸化シリコン膜５
上に、シラン（ＳｉＨ４）とアンモニア（ＮＨ，）との
化学反応に基づく気相成長法によって、７６０°Ｃ，Ｎ
Ｊ／ＳｉＨ４＝ １００の条件下で窒化シリコン膜６を
約３００ムの厚さに形成させる。Next, as shown in FIG. 1(b), a silicon oxide film 5 is formed.
The above was grown at 760°C with N
A silicon nitride film 6 is formed to a thickness of about 300 μm under the condition of J/SiH4=100.
次いで、窒化シリコン膜６の表面を９００″Ｃ１水蒸気
雰囲気中で約６０分間の熱処理で酸化し、約２６ムの酸
化シリコン膜７を成長させる。Next, the surface of the silicon nitride film 6 is oxidized by heat treatment for about 60 minutes in a 900" C1 water vapor atmosphere to grow a silicon oxide film 7 with a thickness of about 26".
次いで、第１図（Ｑ）に示すように、水素イオン８を全
面に注入する。本実施例では、水素イオンとしてＨ２イ
オンを用い、加速エネルギー１０ ＫｅＶ 。Next, as shown in FIG. 1(Q), hydrogen ions 8 are implanted into the entire surface. In this example, H2 ions are used as hydrogen ions, and the acceleration energy is 10 KeV.
温度と同じ温度で熱処理を行なう。本実施例では、Ｎ２
雰囲気中、７５０ ”Ｃで３ｏ分間熱処理を行なった。Heat treatment is performed at the same temperature as the temperature. In this example, N2
Heat treatment was performed at 750''C for 30 minutes in an atmosphere.
次に、第１図（ａ）に示すようにアルミニウム電極９を
通常の真空蒸着法により被着させる。Next, as shown in FIG. 1(a), an aluminum electrode 9 is deposited by a normal vacuum deposition method.
その後、第１図（６）に示すように、保護膜として既知
の気相成長法により酸化シリコン膜１０を全面に被着す
る。Thereafter, as shown in FIG. 1(6), a silicon oxide film 10 is deposited on the entire surface as a protective film by a known vapor phase growth method.
こうして、第１図（ｅｌ）に示すＰチャネルＭＯＮＯ８
型不揮発性記憶装置を作製することができる。In this way, the P channel MONO8 shown in FIG.
type non-volatile storage devices can be created.
本発明によって得られたＭＯＮＯ８型半導体記憶装置の
記憶保持特性の一例を第２図に示す。横軸は書き込み消
去直後のしきい値電圧、縦軸はそ（７）時に蓄積すれた
電荷ノ減衰率（ａｖｔｈ／１０ｇｔ、ｖｔｈ。FIG. 2 shows an example of the memory retention characteristics of the MONO8 type semiconductor memory device obtained according to the present invention. The horizontal axis is the threshold voltage immediately after writing and erasing, and the vertical axis is the decay rate of the charge accumulated at that time (avth/10gt, vth).
しきい値電圧、ｔ９時間）を示している。threshold voltage, t9 time).
第２図の特性では、直線の傾きが小さいほど記憶保持特
性が優れていることを意味している。第２図中の直線１
１は、水素イオン注入後に窒化シリコン膜の形成温度（
７５０’Ｃ）と同じ温度で熱処理した場合、すなわち、
本発明の実施態様で得７へ一／
もれたものの代表特性であり、この特性は、比較のため
に、窒化シリコン膜の形成温度よりも高い温度（８６０
°Ｃ）で熱処理した場合のものの特性直線１２、及び窒
化シリコン膜形成温度よりも低い温度（６５０’Ｃ）で
熱処理した場合のものの特性直線１３のいずれの直線よ
りも傾きが小さい。In the characteristics shown in FIG. 2, the smaller the slope of the straight line, the better the memory retention characteristics. Line 1 in Figure 2
1 is the temperature at which the silicon nitride film is formed after hydrogen ion implantation (
When heat treated at the same temperature as 750'C), i.e.
This is a typical characteristic of what was obtained in the embodiment of the present invention, and for comparison, this characteristic is shown at a temperature higher than the formation temperature of the silicon nitride film (860°C).
The slope is smaller than that of both the characteristic line 12 obtained when the heat treatment is performed at a temperature of 650° C.) and the characteristic line 13 obtained when the heat treatment is performed at a temperature lower than the silicon nitride film formation temperature (650° C.).
即ち、水素イオン注入後において、窒化シリコン膜の形
成温度（７５０’Ｃ）で熱処理を行なうことにより、最
高の記憶保持特性を有するＭＯＮＯ８型半導体記憶装置
を作製することができた。That is, by performing heat treatment at the silicon nitride film formation temperature (750'C) after hydrogen ion implantation, it was possible to fabricate a MONO8 type semiconductor memory device having the best memory retention characteristics.
本実施例では、Ｎ型基板を用い、Ｐチャネル型半導体記
憶装置を形成する場合について説明したが、ｎチャネル
型ＭＯＮＯ３でも使用できることはもちろんであり、ま
たゲ・−ト電極としてポリシリコン等の高融点金属を用
いる場合にも使用できることは言う捷でもない。In this embodiment, a case was explained in which a P-channel type semiconductor memory device was formed using an N-type substrate, but it can of course also be used for an n-channel type MONO3, and a high-temperature material such as polysilicon can be used as the gate electrode. Needless to say, it can also be used when melting point metals are used.
また本実施例では、窒化シリコン膜の形成温度が７６０
′Ｃの場合について説明を行なってきたが、７５０’Ｃ
以外の温度でも窒化シリコン膜形成温度で熱処理するこ
とにより最も効果があることがわかった。Furthermore, in this example, the formation temperature of the silicon nitride film was 760°C.
We have explained the case of 750'C.
It was found that heat treatment at the silicon nitride film formation temperature is most effective even at temperatures other than the above.
発明の効果
本発明のＭＯＮＯ８型半導体記憶装置の製造方法によれ
ば、窒化ンリコン膜−１−に酸化シリコン膜を形成する
際に実施した熱処理に対し、水素イオンを注入し窒化シ
リコン膜形成温度で熱処理することにより、記憶保持特
性の悪化のない、非常に優れた半導体記憶装置を作製す
ることができ、ＭＯＮＯ８型半導体記憶装置の高性能化
に大きく寄与するものである。Effects of the Invention According to the method for manufacturing a MONO8 type semiconductor memory device of the present invention, hydrogen ions are implanted in the heat treatment performed when forming the silicon oxide film on the silicon nitride film-1-, and the silicon nitride film is formed at the silicon nitride film formation temperature. By heat treatment, an extremely excellent semiconductor memory device without deterioration of memory retention characteristics can be manufactured, and this greatly contributes to improving the performance of the MONO8 type semiconductor memory device.
第１図（２Ｌ）〜（８）は本発明の実施例に係る製造ｒ
−程断面図、第２図は本発明の方法によって得られた記
憶保持特性を示す図である。
１・・・・・・Ｎ型ンリコン基板、２．３・・・・・・
ソース及びドレイン領域、４，６・・・・・・酸化ンリ
コン膜、６・・・・・・窒化シリコン膜、７・・・・・
・酸化ンリコン膜、８・・・・・・水素イオン、９・・
・・・・アルミニウム電極、１゜・・・・・・酸化シリ
コン膜。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第１
図
↓Ｉ↓↓↓↓↓↓↓↓↓↓１−ｙ
第１図FIGS. 1(2L) to (8) show manufacturing r according to an embodiment of the present invention.
2 is a cross-sectional view showing the memory retention characteristics obtained by the method of the present invention. 1...N-type non-reconverter board, 2.3...
Source and drain regions, 4, 6... silicon oxide film, 6... silicon nitride film, 7...
・ Oxide licon film, 8...Hydrogen ion, 9...
...Aluminum electrode, 1°...Silicon oxide film. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure ↓I↓↓↓↓↓↓↓↓↓↓1-y Figure 1
Claims (1)
膜と、前記第１の酸化シリコン膜上に窒化シリコン膜と
、前記窒化シリコン膜上に第２の酸化シリコン膜と、前
記第２の酸化シリコン膜上にゲート電極を順次積層して
有する不揮発性記憶装置の形成過程において、前記第２
の酸化シリコン膜を形成した後に、水素イオンを注入し
、前記窒化シリコン膜の形成温度と同じ温度で熱処理す
る工程とを含むことを特徴とする半導体記憶装置の製造
方法。A very thin first silicon oxide film, a silicon nitride film on the first silicon oxide film, a second silicon oxide film on the silicon nitride film, and a second silicon oxide film on the surface of one conductivity type semiconductor substrate. In the process of forming a nonvolatile memory device having gate electrodes sequentially stacked on a silicon oxide film of
1. A method of manufacturing a semiconductor memory device, comprising the steps of: after forming a silicon oxide film, implanting hydrogen ions and performing heat treatment at the same temperature as the temperature at which the silicon nitride film is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59159662A JPH0665232B2 (en) | 1984-07-30 | 1984-07-30 | Method of manufacturing semiconductor memory device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59159662A JPH0665232B2 (en) | 1984-07-30 | 1984-07-30 | Method of manufacturing semiconductor memory device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6136976A true JPS6136976A (en) | 1986-02-21 |
| JPH0665232B2 JPH0665232B2 (en) | 1994-08-22 |
Family
ID=15698597
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59159662A Expired - Lifetime JPH0665232B2 (en) | 1984-07-30 | 1984-07-30 | Method of manufacturing semiconductor memory device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0665232B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005045012A (en) * | 2003-07-22 | 2005-02-17 | Matsushita Electric Ind Co Ltd | Manufacturing method of semiconductor device |
| JP2006319082A (en) * | 2005-05-12 | 2006-11-24 | Sony Corp | Nonvolatile semiconductor memory device |
| JP2007173398A (en) * | 2005-12-20 | 2007-07-05 | Sharp Corp | Semiconductor storage device, and method of manufacturing same |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5530846A (en) * | 1978-08-28 | 1980-03-04 | Hitachi Ltd | Method for manufacturing fixed memory |
| JPS5969973A (en) * | 1982-10-15 | 1984-04-20 | Nec Corp | Semiconductor device |
| JPS603159A (en) * | 1983-06-21 | 1985-01-09 | Matsushita Electronics Corp | Manufacture of nonvolatile memory device |
| JPS6057674A (en) * | 1983-09-08 | 1985-04-03 | Matsushita Electronics Corp | Manufacture of semiconductor memory device |
-
1984
- 1984-07-30 JP JP59159662A patent/JPH0665232B2/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5530846A (en) * | 1978-08-28 | 1980-03-04 | Hitachi Ltd | Method for manufacturing fixed memory |
| JPS5969973A (en) * | 1982-10-15 | 1984-04-20 | Nec Corp | Semiconductor device |
| JPS603159A (en) * | 1983-06-21 | 1985-01-09 | Matsushita Electronics Corp | Manufacture of nonvolatile memory device |
| JPS6057674A (en) * | 1983-09-08 | 1985-04-03 | Matsushita Electronics Corp | Manufacture of semiconductor memory device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005045012A (en) * | 2003-07-22 | 2005-02-17 | Matsushita Electric Ind Co Ltd | Manufacturing method of semiconductor device |
| JP4545401B2 (en) * | 2003-07-22 | 2010-09-15 | パナソニック株式会社 | Manufacturing method of semiconductor device |
| JP2006319082A (en) * | 2005-05-12 | 2006-11-24 | Sony Corp | Nonvolatile semiconductor memory device |
| JP2007173398A (en) * | 2005-12-20 | 2007-07-05 | Sharp Corp | Semiconductor storage device, and method of manufacturing same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0665232B2 (en) | 1994-08-22 |
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