JPS6132435A - 半導体素子の取り付け方法 - Google Patents

半導体素子の取り付け方法

Info

Publication number
JPS6132435A
JPS6132435A JP15360984A JP15360984A JPS6132435A JP S6132435 A JPS6132435 A JP S6132435A JP 15360984 A JP15360984 A JP 15360984A JP 15360984 A JP15360984 A JP 15360984A JP S6132435 A JPS6132435 A JP S6132435A
Authority
JP
Japan
Prior art keywords
semiconductor element
lead frame
adhesive
adhesive substance
fixing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15360984A
Other languages
English (en)
Inventor
Hiroaki Okihara
沖原　裕昭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP15360984A priority Critical patent/JPS6132435A/ja
Publication of JPS6132435A publication Critical patent/JPS6132435A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体素子を容器やリードフレームＫｍり付
ける取り付は方法に関するものである。
〔従来の技術〕
従来、半導体素子をリードフレームやステム等に樹脂や
ペースト状の物質等の接着性物質で接着する場合、第２
図（ａ）Ｋ示すように、ディスペンス法や転写法にてあ
らかじめリードフレーム３やステム等に接着性物質２を
被着もしくは載置しておき、しかる後第２図（ｂ）に示
すように、半導体素子ｌを接着性物質２上ＶＣ，載置し
取シ付ける方法が取られていた。
しかし、上記方法による取シ付は方法では、接着性物質
２の量の制御及びリードフレーム３等上での接着場所の
制御が困難であシ、取シ付けた半導体素子１が傾斜して
しまうたル、半導体素子１を取シ付けた後接着性物質２
申に気泡を生じて半導体素子１が剥がれてしまったシ、
又接着性物質２と半導体素子１との位置が一致せず半導
体素子ｌの接着強度が弱くなってしまったりするという
欠点があった。
〔発明が解決しようとする手段〕
本発明の目的は、このような欠点を改善し、充分に管理
された接着強度および取シ付は位［精度を確保すること
が可能な半導体素子の取シ付は方法を提供することであ
る。
〔問題点を解決するための手段〕
上記目的を達成するために１本発明によれば、半導体素
子裏面に樹脂や、Ａｇ−？Ｃｕの混練された導伝性ペー
ストや、絶縁ペースト等の接着性物質を接着しておき、
しかる後にリードクレームやステム等の上に半導体素子
を載置して半導体素子を接着する半導体素子の取シ付は
方法を得る。
〔実施例〕
次に１本発明の図面を参照してより詳細に説明する。
第１図は本発明の一実施例を示したもので、第１図（ａ
）に示すように、半導体素子ｌの裏面に接着性物質２を
接着し、その後、第１図（ｂ）に示すように１この半導
体素子ｌをリードクレーム３上に載置し、熱処理を施す
ことによシ、半導体素子ｌをリードフレーム３ＴＩＣＩ
ｌｉＪ＋付ける。この方法によルばらつきの少ないマウ
ント精度、マウント強度が可能である。
〔発明の効果〕 本発明による半導体素子のマウント方法を用いれば、半
導体素子の大きさＫよって接着性物質の量が管理され素
子接着後に半導体素子が傾斜することなくリードフレー
ム等と接着することが可能である。又、半導体素子と接
着性物質との位置がずれてしまうことがなく、ずれによ
る接着強度の低下や半導体素子の剥がれを防止すること
が可能である。
【図面の簡単な説明】
第１図１８）、　（ｂ）は本発明の一実施例による素子
取り付は方法を示す各工程の断面図である０第２図（ａ
）、　（ｂ）は、従来の方法による素子域ル付は方法を
示す各工程の断面図である０ １・・・・・・半導体素子、２・・・・・接着性物質（
ペースト等）、３・・・・・・リードフレームの半導体
素子を取り付ける部分。 Ｊ　、’”ｊ、ｌ’、；７に’、＼ 代理人　弁理士　　内　原　　　晋ｌニー７　、、、、
、、・パ・１＼−一′

Claims (1)

    【特許請求の範囲】
  1. 　半導体素子をリードフレームやステムに樹脂又はペー
    スト等の接着性のある物質を用いて接着する半導体素子
    のマウント方法において、前記半導体素子の裏面にあら
    かじめ前記接着性のある物質を被着しておき、しかる後
    にリードフレームやステム等に前記半導体素子を載置し
    、該半導体素子を取り付けることを特徴とする半導体素
    子の取り付け方法。
JP15360984A 1984-07-24 1984-07-24 半導体素子の取り付け方法 Pending JPS6132435A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15360984A JPS6132435A (ja) 1984-07-24 1984-07-24 半導体素子の取り付け方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15360984A JPS6132435A (ja) 1984-07-24 1984-07-24 半導体素子の取り付け方法

Publications (1)

Publication Number Publication Date
JPS6132435A true JPS6132435A (ja) 1986-02-15

Family

ID=15566224

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15360984A Pending JPS6132435A (ja) 1984-07-24 1984-07-24 半導体素子の取り付け方法

Country Status (1)

Country Link
JP (1) JPS6132435A (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0183332U (ja) * 1987-11-24 1989-06-02
WO1998032172A1 (de) * 1995-07-17 1998-07-23 Siemens Aktiengesellschaft Elektronisches bauelement
US6226452B1 (en) 1997-05-19 2001-05-01 Texas Instruments Incorporated Radiant chamber for simultaneous rapid die attach and lead frame embed for ceramic packaging
US6870245B1 (en) 1997-01-22 2005-03-22 Siemens Aktiengesellschaft Electric component with an integrated circuit mounted on an island of a lead frame

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0183332U (ja) * 1987-11-24 1989-06-02
WO1998032172A1 (de) * 1995-07-17 1998-07-23 Siemens Aktiengesellschaft Elektronisches bauelement
US6870245B1 (en) 1997-01-22 2005-03-22 Siemens Aktiengesellschaft Electric component with an integrated circuit mounted on an island of a lead frame
US6226452B1 (en) 1997-05-19 2001-05-01 Texas Instruments Incorporated Radiant chamber for simultaneous rapid die attach and lead frame embed for ceramic packaging

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