JPS6130082A - Photovoltaic device - Google Patents
Photovoltaic deviceInfo
- Publication number
- JPS6130082A JPS6130082A JP59151705A JP15170584A JPS6130082A JP S6130082 A JPS6130082 A JP S6130082A JP 59151705 A JP59151705 A JP 59151705A JP 15170584 A JP15170584 A JP 15170584A JP S6130082 A JPS6130082 A JP S6130082A
- Authority
- JP
- Japan
- Prior art keywords
- electrode film
- adjacent
- film
- exposed
- photoactive layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 9
- 239000010410 layer Substances 0.000 description 37
- 238000000034 method Methods 0.000 description 10
- 239000010936 titanium Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- MZFIXCCGFYSQSS-UHFFFAOYSA-N silver titanium Chemical compound [Ti].[Ag] MZFIXCCGFYSQSS-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- -1 TCO Chemical compound 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000706 filtrate Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
【発明の詳細な説明】
（イ）産業上の利用分野
木発萌は光エネルギを直接電気エネルギに変換する光起
電力装置に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application Kibaki Moe relates to a photovoltaic device that directly converts light energy into electrical energy.
（ロ） 従来の技術
基板の絶縁表面の複数の領域に分割配置された膜状光活
性層を第１電極膜及び第２電極膜で挾持することによっ
て形成きれた光電変換素子を複数個電気的に接続せしめ
た光起電力装置が存在する（米国特許第４．２８１．２
０８号）。(b) Conventional technology A plurality of photoelectric conversion elements formed by sandwiching a film-like photoactive layer divided and arranged in a plurality of regions on an insulating surface of a substrate between a first electrode film and a second electrode film are electrically connected to each other. There are photovoltaic devices connected to
No. 08).
一方、本願出願人は斯る構造の光起電力装置に好適な製
造方法として特願昭５７−２１３１６８号（特開昭５９
−１０３３８３号）として出願するに及んでいる。即ち
、この出願によれば第７図に示す如く、既に基板（１０
）の絶縁表面に離間配置された第１電極膜（１１８）（
ｌｌｂ）（ｌｌｃ）の全面及び基板（１０）の絶縁表面
を含んで膜状の光活性層（１２）を被着し、次いで該光
活性層（１２）を各領域（Ａ ）（Ｂ ）（Ｃ）に分割
することなくその全面に第２電極膜（１３）を重畳した
後、第８図のように各領域（Ａ）（Ｂ）（Ｃ）の隣接間
隔部（ａｂ）（ｂｅ）に位置する第２電極膜部分（１３
’） （１３’）及び光活性層部分（１２’） （１２
’）がエツチング除去きれて第２電極膜（１３ａ）（１
３ｂ）＜１３Ｃ）及び光活性層（１２ａ）（１２ｂ）（
１２ｃ ）が個別に分割されると共に、一方の領域（Ｂ
）（Ｃ）の第１電Ｓ膜（ｆｌｂ）（ｌｌｃ）が露出され
、最後に該第１電極膜＜１ｌｂ）（１１ｃ）の露出部（
ｌｌｈａ）（ｌｌｃｂ）と隣接する他方の領域（Ａ）（
Ｂ）の第２電極膜（１３ａ）＜１３ｂ）とを電気的に接
続すべき結合電極膜（１４ａｂ）（１４ｂＣ）が選択的
にマスク蒸着される（第９図）。On the other hand, the applicant of the present application has disclosed Japanese Patent Application No. 57-213168 (Japanese Unexamined Patent Application Publication No. 59-1988) as a manufacturing method suitable for a photovoltaic device having such a structure.
-103383). That is, according to this application, as shown in FIG.
) The first electrode film (118) spaced apart on the insulating surface of (
llb) (llc) and the insulating surface of the substrate (10); After superimposing the second electrode film (13) on the entire surface without dividing it into the regions (A), (B), and (C), as shown in FIG. The second electrode film portion (13
') (13') and photoactive layer portion (12') (12
') has been completely removed by etching and the second electrode film (13a) (1
3b) <13C) and photoactive layers (12a) (12b) (
12c) are individually divided, and one region (B
) The first electrode film (flb) (llc) of (C) is exposed, and finally the exposed portion (11c) of the first electrode film <1lb) (11c) is exposed.
llha) (llcb) and the other area (A) (
Coupling electrode films (14ab) (14bC) to be electrically connected to the second electrode films (13a)<13b) in B) are selectively deposited using a mask (FIG. 9).
然し乍ら、斯る製造方法によると第１電極膜（ｌｌａ）
（ｆｌｂ）（１ｌｃ）、光活性層（１２ａ）（１２ｂ）
（１２ｃ）及び第２電極膜（１３ａ）（１３ｂ）（１３
ｃ）の各積層体からなる光電変換素子（１５ａ）（１５
ｂ）＜１５ｃ）をそれらの隣接間隔部（ａｂ）（ｂｃ）
に於いて電気的に直列接続すべき結合電極膜（１４ａｂ
）（１４ｂｃ）が、例えば一つの隣接間隔部（ａｂ）を
例に挙げて第１０図に示せば、光活性層（１２ａ）の膜
厚ｔ１と第２電極膜（１３ａ）の膜厚ｔ２との和である
急峻な断差Ｈを越えなければならないために蒸着が不完
全となる結果、その立下がり途中等で断線する危惧を有
していた。斯る断線事故は、結合電極膜（１４ａｂ）（
１４ｂｃ）の材料が硬質なものほどその発生率は高い。However, according to this manufacturing method, the first electrode film (lla)
(flb) (1lc), photoactive layer (12a) (12b)
(12c) and second electrode film (13a) (13b) (13
Photoelectric conversion elements (15a) (15
b) <15c) as their adjacent spacing (ab) (bc)
Coupled electrode films (14ab
) (14bc) is shown in FIG. 10, taking one adjacent gap (ab) as an example, the film thickness t1 of the photoactive layer (12a) and the film thickness t2 of the second electrode film (13a). As a result of having to cross a steep difference H, which is the sum of Such a disconnection accident occurred when the bonding electrode film (14ab) (
14bc), the harder the material, the higher the occurrence rate.
（ハ） 発明が解決しようとする問題点本発明光起電力
装置は、上述の如き隣接間隔部（ｊｉｂ）（ｂｃ）に於
ける結合電極膜（１４ａｂ）（１４ｂｃ）の断線事故を
解決しようとするものである。(c) Problems to be Solved by the Invention The photovoltaic device of the present invention attempts to solve the above-mentioned disconnection accident of the bonding electrode films (14ab) (14bc) in the adjacent spacing parts (jib) (bc). It is something to do.
（ニ） 問題点を解決するための手段
本発明光起電力装置は上述の如き問題点を解決すべく為
されたものであって、第１電極膜、光活性層及び第２電
極膜の積層体からなる複数の光電変換素子が基板の絶縁
表面に並置きれると共に、上記光電変換素子が互いに隣
接せる隣接間隔部に於いて一方の素子の第２電極膜上に
後付けされた結合ｉｔｓ膜は、一旦当該素子の第２電極
膜から露出した光活性層の端面に立下がり、次いで他方
の素子から露出した第１電極膜の露出部上に延出し、隣
接する光電変換素子を電気的に直列接続する構成にある
。(d) Means for solving the problems The photovoltaic device of the present invention has been made to solve the above-mentioned problems, and includes a lamination of a first electrode film, a photoactive layer, and a second electrode film. A plurality of photoelectric conversion elements consisting of a plurality of photoelectric conversion elements are arranged side by side on an insulating surface of a substrate, and a bonding ITS film is attached later on the second electrode film of one of the elements in an adjacent spaced portion where the photoelectric conversion elements are adjacent to each other. , once falls down on the end face of the photoactive layer exposed from the second electrode film of the device, and then extends onto the exposed portion of the first electrode film exposed from the other device, thereby electrically connecting adjacent photoelectric conversion devices in series. It is in the configuration to connect.
（ホ） 作用
上述の如く隣接間隔部に於いて一方の光電変換素子の第
２電極膜上に後付けされた結合電極膜は、一旦当該素子
の第２電極膜から露出した光活性層の端面・に立下がり
、次いで他方の素子から露出した第１電極膜の露出部上
に延出したので、上記光活性層の端面への立下がりは結
合電極膜の急峻な断差を補正すべく作用する。(E) Function As described above, the bonding electrode film that is later attached on the second electrode film of one of the photoelectric conversion elements in the adjacent spacing section is applied to the end face of the photoactive layer exposed from the second electrode film of the element. Since the photoactive layer falls over the exposed portion of the first electrode film exposed from the other element, the fall to the end face of the photoactive layer acts to correct the steep difference in the bonding electrode film. .
（へ） 実施例
以下本発明光起電力装置を第１図に示す如く３つの領域
（Ａ）（Ｂ）（Ｃ）に３個の光電変換素子を並置した実
施例につき詳述するが光電変換素子の個数は３個に限定
きれるものではない。(F) Example Hereinafter, an example in which the photovoltaic device of the present invention is arranged in three regions (A), (B), and (C) in parallel as shown in FIG. 1 will be described in detail. The number of elements is not limited to three.
第１図に於いて、その基本構造は従来と同じであり、く
１）はガラス等の絶縁性且つ透光性を有す′る基板、（
２ａ）（２ｂ）（２ｃ）は上記基板（１）の−主面の３
つの領域（Ａ ＞（Ｂ ）（Ｃ）に分割配置された第１
電極膜で、例えば酸化スズ（ＳｎＯ２）、酸化インジウ
ム（Ｉｎ２０ｓ）或いは酸化インジウムスズ（ＩＴＯ）
等の透光性導電酸化物（Ｔ ＣＯ）の単層或いは積層構
造を持ち、それ等は周知の電子ビーム蒸着法により形成
きれ基板〈１）の透光性と相俟って受・光面を構成する
。（３ａ）（３ｂ）（３ｃ）は上記第１電極膜（２ａ）
（２ｂ）（２ｃ）を実質的に覆う如く離間配置きれた膜
状の光活性層で、例えばシリコン化合物雰囲気中でのグ
ロー放電法により形成される非晶質シリコン系の半導体
膜からなり、斯る半導体膜は光照射により発電に寄与す
る電子及びまたは正孔のキャリアを発生すべくその膜面
に平行なＰＩＮ接合等の半導体接合を備えている。（４
ａ）（４ｂ）（４ｃ）は上記光活性層（３ａ）（３ｂ）
（３ｃ）上に重畳被着されたオーミック金属製の第２１
を極膜で、受光面側から見て背面電極を司どり、この第
２電極膜（４ａ）（ａｂ）（４ｃ）、光活性層（３ａ）
（３ｂ）（３ｃ）及び第１電極膜（２ａ）（２ｂ）（２
ｃ）の各積層体から１つの光電変換素子（５ａ）（５ｂ
）（５ｃ）が構成され、光活性層（３ａ）（３ｂ）（３
ｃ）に於いて発生した各キャリアは各々の第１電極膜（
２ａ）（２ｂ）（２ｃ）及び第２電極膜（４ａ ）（４
ｂ ） （４ｃ ）により集電される。In Fig. 1, the basic structure is the same as the conventional one, and (1) is an insulating and transparent substrate such as glass;
2a), (2b), and (2c) are the −3 main surfaces of the substrate (1).
The first area is divided into two areas (A > (B) (C).
Electrode film, such as tin oxide (SnO2), indium oxide (In20s), or indium tin oxide (ITO)
It has a single layer or multilayer structure of translucent conductive oxide (TCO) such as TCO, which is formed by the well-known electron beam evaporation method. Configure. (3a) (3b) (3c) are the above first electrode films (2a)
(2b) A photoactive layer in the form of a film spaced apart so as to substantially cover (2c), consisting of an amorphous silicon semiconductor film formed by a glow discharge method in a silicon compound atmosphere, for example. The semiconductor film is provided with a semiconductor junction such as a PIN junction parallel to the film surface in order to generate carriers of electrons and/or holes that contribute to power generation by irradiation with light. (4
a) (4b) (4c) are the above photoactive layers (3a) (3b)
(3c) No. 21 made of ohmic metal superimposed on the top
The polar film controls the back electrode when viewed from the light-receiving surface side, and this second electrode film (4a) (ab) (4c), photoactive layer (3a)
(3b) (3c) and first electrode film (2a) (2b) (2
One photoelectric conversion element (5a) (5b) from each laminate of c)
) (5c) and photoactive layers (3a) (3b) (3
Each carrier generated in c) is transferred to each first electrode film (
2a) (2b) (2c) and the second electrode film (4a) (4
b) Current is collected by (4c).
上記第２電極膜（４ａ）（４ｂ）（４ｃ）の具体的形状
は第２図′に複数の領域（Ａ）（Ｂ）（Ｃ＞の一つの隣
接間隔部（ａｂ）を拡大して示す如く光活性層（３ａ）
（３ｂ）（３ｃ）の幅（Ｗｌ）よりも第２電極膜（４ａ
）（４ｂ）の幅（Ｗ２）の方が小ξく、従って図示して
いない隣接間隔部（ｂｃ）を含めて隣接間隔部（ａｂ）
（ｂｃ）に於いて第２電極膜（４ａ）（４ｂ）（４ｃ）
から光活性層（３ｇ）（３ｂ）（３ｃ）の端面（３ａｓ
）（３ｂｓ）（３ｃｓ）が露出状態にある。The specific shape of the second electrode films (4a), (4b), and (4c) is shown in FIG. Photoactive layer (3a)
(3b) The second electrode film (4a) is smaller than the width (Wl) of (3c).
) (4b) is smaller ξ, therefore, the width (W2) of the adjacent gap portion (ab) including the adjacent gap portion (bc) not shown is
In (bc), the second electrode film (4a) (4b) (4c)
From the end face (3as) of the photoactive layer (3g) (3b) (3c)
) (3bs) (3cs) are exposed.
（６ａｂ）（６ｂｃ）は上記隣接間隔部（ａｂ）（ｂｃ
）に於いて隣接せる光電変換素子（５ａ）（５ｂ）（５
ｃ）を互いに電気的に直列接続せしめる結合電極膜で、
左隣りの光電変換素子（５ｇ）（ｓｂ）の第２電極膜（
４ａ）（４ｂ）と当該光電変換素子（５ａ）（５ｂ）の
無効領域に於ける端面（４ａｓ）（４ｂｓ）と結合し、
一旦露出状態にある光活性層（３ａ）（３ｂ）の端面に
立下がり、次いで右隣りの光活性層（Ｓｂ）（３ｃ）か
ら隣接間隔部（ａｂ）（ｂｃ）に露出した第１電極膜（
２ｂ）（２ｃ）の露出部（２ｂａ）（２ｃｂ）に降り立
つ、即ち、左隣りの第２電極膜（４ａ）（４ｂ）から延
出する結合電極膜（６ａｂ）（６ｂｃ）は直接右隣りの
第１電極膜（２ｂ）（２ｃ）の露出部（２ｂａ）（２ｃ
ｂ）に鉛直下向きに立下がるのではなく、一旦当該光！
変換素子（５ａ）（５ｂ）を構成する光活性層（３ａ）
（３ｂ）の右側の端面（３ａｓ ）（３ｂｓ ）に立下
がった後、右隣りの第１を極膜（２ｂ）（２ｃ）の露出
ｆｉｌｔ！（２ｂａ）（２ｃｂ）に延在する。従って、
その形状は階段状となり、直接鉛直下向きに立下がるも
のに比較してその急峻な断差Ｈが上記階段形状により夫
々の膜厚ｔ１及びｔ２に２分割され緩和きれる。(6ab) (6bc) are the adjacent spacing parts (ab) (bc)
) adjacent photoelectric conversion elements (5a) (5b) (5
c) a coupled electrode film that electrically connects each other in series;
The second electrode film of the photoelectric conversion element (5g) (sb) on the left (
4a) (4b) and the end faces (4as) (4bs) in the ineffective regions of the photoelectric conversion elements (5a) (5b),
The first electrode film falls down on the end face of the exposed photoactive layer (3a) (3b), and then is exposed from the right adjacent photoactive layer (Sb) (3c) to the adjacent spacing part (ab) (bc). (
The bonding electrode films (6ab) (6bc) that land on the exposed parts (2ba) (2cb) of 2b) and (2c), that is, extend from the second electrode films (4a) and (4b) on the left, directly touch the second electrode films on the right. Exposed portions (2ba) (2c) of first electrode films (2b) (2c)
b) Instead of falling vertically downward, the light in question!
Photoactive layer (3a) constituting the conversion element (5a) (5b)
After falling down to the right end face (3as) (3bs) of (3b), filtrate the first adjacent polar film on the right to expose the polar membrane (2b) (2c)! (2ba) extends to (2cb). Therefore,
The shape is step-like, and compared to a case where the step falls directly vertically downward, the steep difference H can be relaxed by being divided into two film thicknesses t1 and t2 due to the step shape.
斯る結合電極膜（６ａｂ）（６ｂｃ ）の好適な実施例
は、ＴＣＯの第１電極膜（２ｂ）（２Ｃ）との結合界面
に於いてアルミニウム（１）から構成した場合、上記第
１電極膜（２ｂ）（２ｃ）からの酸素の移動により上記
結合界面が酸化し絶縁質に変質するのを防止すべく下層
からチタンＴｉ（或いはチタン銀合金ＴｉＡｇ）にＡｌ
ｌ及びＴｉ（或いはＴｉＡｇ）が積層された三層構造か
ら構成されている。A preferred embodiment of such a bonding electrode film (6ab) (6bc) is when it is made of aluminum (1) at the bonding interface with the first electrode film (2b) (2C) of the TCO. In order to prevent the bonding interface from being oxidized and changed into an insulating material due to the movement of oxygen from the films (2b) and (2c), Al is added to the titanium Ti (or titanium silver alloy TiAg) from the lower layer.
It has a three-layer structure in which l and Ti (or TiAg) are laminated.
尚、上記Ｔｉ或いはＴｉＡｇはＡｆｌ単体に較べ硬質で
あり急峻な断差Ｈに於ける断線事故の発生が高かったた
めにその使用は製造水ａりの低下をもた。Incidentally, the above-mentioned Ti or TiAg is harder than Afl alone, and the occurrence of disconnection accidents at the steep difference H was high, so its use resulted in a decrease in the amount of water produced.
らしていたが、上述の如く断差Ｈの２分割により結合界
面の酸化防止に有益なＴｉ或いはＴｉＡｇの使用が可能
となる。However, as mentioned above, by dividing the difference H into two, it becomes possible to use Ti or TiAg, which is useful for preventing oxidation of the bonding interface.
斯る構造の光起電力装置の好適な製造方法を工程別要部
を拡大゛して示す第３図乃至第７図を参照して説明する
。第３図の工程では既に絶縁性且つ透光性を有する基板
（１）の−主面上に於いて複数の領域（Ａ ）（Ｂ ）
・ 毎に分割配置された酸化スズ、酸化インジウムスズ
等の透光性導電酸化物（Ｔ ＣＯ）を単層或いは積層せ
しめた第１電極膜（２ａ）（２ｂ）・・及び基板（１）
の−主面を連続的に覆う如く光照射により発電に寄与す
る電子及びまたは正孔のキャリアを発生する膜状の光活
性層（３）及びオーミック性の第２電極膜（４）が重畳
被着きれる。より詳しくは上記光活性層（３）が水素化
非晶質シリコン系半導体であって、光入射側から膜面に
平行なＰＩＮ接合を備えている場合、先ずシリコン化合
物雰囲気例えばシラン（ＳｉＨ４）及びメタン（ＣＨ４
）ガス雰囲気にＰ型決定不純物を含むジボラン（８２Ｈ
８）を添加しグロー放電を生起せしめることにより膜厚
５０人〜２００人人称のＰ型層を形成し、次いで順次Ｓ
ｉＨ４ガスのみにより膜厚５０００人〜７０００人程度
人称性（Ｉ型）Ｎと、ＳｉＨ４ガスにＮ型決定不純物を
含むホスフィン（ＰＨ３）を添加し膜厚１００人〜５０
０人程人称Ｎ型層と、が上記Ｐ型層上に積層被着される
。斯る光活性層（３）の形成後直ちにオーミンク性のア
ルミニウム（Ａ’Ｑ）の単層或いは該Ａｌ１層上にチタ
ン（Ｔ１）、或いはチタン銀合金（ＴｉＡｇ）を積層せ
しめた積層構造の第２電極膜（４〉が蒸着される。A preferred method for manufacturing a photovoltaic device having such a structure will be described with reference to FIGS. 3 to 7, which show enlarged views of the main parts of each step. In the process shown in FIG. 3, a plurality of regions (A) and (B) have already been formed on the main surface of the insulating and translucent substrate (1).
- A first electrode film (2a) (2b) consisting of a single layer or a stack of transparent conductive oxides (TCO) such as tin oxide, indium tin oxide, etc., which are arranged separately, and a substrate (1).
A film-like photoactive layer (3) that generates carriers of electrons and/or holes that contribute to power generation by light irradiation and an ohmic second electrode film (4) are superimposed so as to continuously cover the main surface of the film. I can arrive. More specifically, when the photoactive layer (3) is a hydrogenated amorphous silicon-based semiconductor and has a PIN junction parallel to the film surface from the light incident side, first, a silicon compound atmosphere such as silane (SiH4) and Methane (CH4
) Diborane (82H) containing P-type determining impurities in the gas atmosphere
8) to cause glow discharge to form a P-type layer with a thickness of 50 to 200 layers, and then sequentially add S.
A film thickness of about 5,000 to 7,000 N is obtained using only iH4 gas, and a film thickness of about 100 to 50 is obtained by adding phosphine (PH3), which contains an N-type determining impurity, to SiH4 gas.
A 0-person N-type layer is deposited over the P-type layer. Immediately after the formation of the photoactive layer (3), a layered structure in which titanium (T1) or titanium-silver alloy (TiAg) is laminated on a single layer of ohmic aluminum (A'Q) or on the Al1 layer is applied. A two-electrode film (4) is deposited.
第４図の工程では、上記第２電極膜（４）上に除去すべ
き隣接間隔部（ａｂ）の第２電極膜部分（４′）を露出
状態としたフォトレジスト膜〈７）が被着される。斯る
フォトレジスト膜（７）としては半導体分野に於いて周
知なゴム系レジスト、例えばイーストマンコダック社製
の商品名’ＫＭＲ〜７４７Ｊや、本願出願人が特願昭５
８−３７７４８号として出願したベースフィルムにアク
リル系光重合性七ツマと被膜形成性ポリマを主成分とす
るレジスト膜を予め被着した日東電気工業社製商品名１
ネオドロツク−Ｅ４等のドライフィルムレジストが用い
られる。特に上記ドライフィルムレジストが大面積のエ
ツチングに適しており、ゴム系レジストの塗布、ベーキ
ング工程に代って簡便なラミネート工程により被着する
ことができると共に膜厚が厚い等の利点を有する。更に
詳しい説明は上記特願昭５８−３７７４８号を参照され
たい。In the step shown in FIG. 4, a photoresist film (7) is deposited on the second electrode film (4) with the second electrode film portion (4') of the adjacent gap (ab) to be removed exposed. be done. Such a photoresist film (7) may be a rubber-based resist well known in the semiconductor field, such as Eastman Kodak's product name 'KMR~747J, or
Product name 1 manufactured by Nitto Electric Kogyo Co., Ltd., which has been applied as No. 8-37748 and is pre-coated with a resist film containing acrylic photopolymerizable nitrates and a film-forming polymer as main components on a base film.
A dry film resist such as Neodotsu-E4 is used. In particular, the dry film resist described above is suitable for etching a large area, and has advantages such as being able to be applied by a simple laminating process in place of the coating and baking process of a rubber resist, and having a large film thickness. For a more detailed explanation, please refer to the above-mentioned Japanese Patent Application No. 58-37748.
第５図の工程では、フォトレジスト膜（７）から露出し
た隣接間隔部（ａｂ）の第２電極膜部分（４′）が周知
のエツチング液、或いはエツチングガスを用いたウェッ
トエツチング或いはプラズマエツチングの如きドライエ
ツチングにより除去される。好ましくはドライプロセス
であるＣＣＱ４等の塩素系ガスを用いたプラズマエツチ
ングが施きれ、当該隣接間隔部（ａｈ）に光活性層部分
り３′）が露出せしめられる。In the process shown in FIG. 5, the second electrode film portion (4') of the adjacent gap (ab) exposed from the photoresist film (7) is etched by wet etching using a well-known etching solution or etching gas, or by plasma etching. It is removed by dry etching. Plasma etching using a chlorine-based gas such as CCQ4, which is preferably a dry process, is performed to expose the photoactive layer portion 3') in the adjacent spacing (ah).
第６図の工程では上記エツチング除去工程に於いて露出
せしめられた光活性層部分（３′）にレーザビーム、電
子ビーム等のエネルギビーム（ＥＢ）を照射する。ここ
で注目すべきは隣接間隔部の光活性層部分（３′）の除
去工程がエネルギビーム（ＥＢ）の照射により除去され
る点にある。即ち、上述の如くエネルギビーム（ＥＢ）
の照射によると実質的にその照射方向である厚み方向に
上記除去状態が進行し、殆んど照射方向に対して垂直方
向、即ち面方向には除去状態は進行しない。従って、光
活性層部分（３′）は斯る光活性層部分（３′）を除去
するに十分なエネルギ密度を備えたビーム幅とほぼ等し
い幅（Ｌ２）だけ除去きれる。In the step shown in FIG. 6, the photoactive layer portion (3') exposed in the etching removal step is irradiated with an energy beam (EB) such as a laser beam or an electron beam. What should be noted here is that the removal process of the photoactive layer portion (3') in the adjacent interval is performed by irradiation with an energy beam (EB). That is, as mentioned above, the energy beam (EB)
According to the irradiation, the above-mentioned removal progresses substantially in the thickness direction, which is the irradiation direction, and almost never progresses in the direction perpendicular to the irradiation direction, that is, in the planar direction. Therefore, the photoactive layer portion (3') can be removed by a width (L2) approximately equal to the beam width with sufficient energy density to remove the photoactive layer portion (3').
例えば上記エネルギビーム（ＥＢ）は波長１．０６μｍ
Ｑスイッチ付 Ｎｄ：ＹＡＧレーザによるレーザビーム
が適当であり、エネルギ密度約０．２Ｊ／ ｃｍ ２〜
０．４ Ｊ ／ ｃｍ ２、走査速度３Ｑｍ ／ ｓｅ
ｃ〜８０ｍｍ ／ｓｅｃの照射条件による１回の走査に
於いて膜厚約５０００人−７０ＱＱ人のａ−８ｉ系先光
活性部分く３′）は約８０μｍ〜２００μｍ除去される
。斯る工程に於いて除去きれた光活性層部分（３つの除
去幅（Ｌ２）は当然のことながら第売電極膜（４ｇ）（
４ｂ）の隣接間隔長（Ｌｌ）以下である。For example, the energy beam (EB) has a wavelength of 1.06 μm.
A laser beam using a Nd:YAG laser with a Q switch is suitable, and the energy density is approximately 0.2 J/cm 2 ~
0.4 J/cm2, scanning speed 3Qm/se
In one scan under the irradiation conditions of c~80 mm/sec, a film thickness of approximately 5,000 ~70QQ a-8i system photoactive portions (3') is removed by approximately 80~200 μm. The portion of the photoactive layer completely removed in this process (three removal widths (L2) is, of course, the third electrode film (4 g) (
4b) is equal to or less than the adjacent interval length (Ll).
最終工程は既に第２図に示してあり、上記第６図の工程
でエネルギビーム（ＥＢ）の照射により露出せしめられ
−た一方の領域（Ｂ）の第１電極膜（２ｂ）の露出部（
２ｂａ）と、隣接する他方の領域（Ａ）の第２電極膜（
４ａ）とを電気的に接続すべく結合電極膜（６ａｂ）が
金属或いはセラミックマスクを介して選択的に蒸Ｍきれ
る。The final step is already shown in FIG. 2, and the exposed portion (
2ba) and the second electrode film (A) in the other adjacent region (A).
4a), the coupling electrode film (6ab) is selectively vaporized through a metal or ceramic mask.
（ト〉 発明の効果
本発明光起電力装置は以上の説明から明らかな如く、隣
接間隔部に於いて結合電極膜は一旦当該素子の光活性層
の端面に立下がることによって急 −峻な断差が躯和
補正されるので、斯る急峻な断差に起因する断線事故を
招くことなく、隣接する光電変換素子を電気的に直列接
続することができる。(G) Effects of the Invention As is clear from the above description, in the photovoltaic device of the present invention, the coupling electrode film in the adjacent spaced portion once falls down on the end surface of the photoactive layer of the device, thereby creating a sharp cut. Since the difference is corrected for summation, adjacent photoelectric conversion elements can be electrically connected in series without causing a disconnection accident due to such a steep difference.
第１図は本発明光起電力装置の断面図、第２図はその要
部の拡大断面図、第３図乃至第６図は本発明光起電力装
置の製造方法を説明するための工程別拡大断面図、第７
１５０乃至第６１５０は従来装置の製造方法を説明する
ための工程別断面図、第１０図は従来装置の欠点を示す
拡大断面図、を夫々示している。
（１）−・基板、（２ｇ）（２ｂ）（２ｃ）＝・第１電
極膜、（３）（３ａ）（３ｂ）（３ｃ）・・光活性層、
（４ａ）（４ｂ）（４ｃ）・・第２電極膜、（５ａ）（
５ｂ）（５ｃ）−光電変換素子。Fig. 1 is a sectional view of the photovoltaic device of the present invention, Fig. 2 is an enlarged sectional view of the main parts thereof, and Figs. 3 to 6 are step-by-step diagrams for explaining the manufacturing method of the photovoltaic device of the present invention. Enlarged sectional view, No. 7
Reference numerals 150 to 6150 show cross-sectional views by process for explaining the manufacturing method of the conventional device, and FIG. 10 shows an enlarged sectional view showing the drawbacks of the conventional device. (1) - Substrate, (2g) (2b) (2c) = First electrode film, (3) (3a) (3b) (3c)... Photoactive layer,
(4a) (4b) (4c)... second electrode film, (5a) (
5b) (5c) - Photoelectric conversion element.
Claims (1)
らなる複数の光電変換素子が基板の絶縁表面に並置され
ると共に、上記光電変換素子が互いに隣接せる隣接間隔
部に於いて一方の素子の第２電極膜上に後付けされた結
合電極膜は、一旦当該素子の第２電極膜から露出した光
活性層の端面に立下がり、次いで他方の素子から露出し
た第１電極膜の露出部上に延出し、隣接する光電変換素
子を電気的に直列接続したことを特徴とする光起電力装
置。(1) A plurality of photoelectric conversion elements each consisting of a laminate of a first electrode film, a photoactive layer, and a second electrode film are juxtaposed on an insulating surface of a substrate, and the photoelectric conversion elements are placed adjacent to each other at adjacent intervals. The bonding electrode film, which is later attached on the second electrode film of one of the elements, once falls down on the end face of the photoactive layer exposed from the second electrode film of the element, and then extends over the first electrode film exposed from the other element. 1. A photovoltaic device extending over an exposed portion of the photovoltaic device and having adjacent photoelectric conversion elements electrically connected in series.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59151705A JPS6130082A (en) | 1984-07-20 | 1984-07-20 | Photovoltaic device |
| US06/755,054 US4663494A (en) | 1984-07-19 | 1985-07-12 | Photovoltaic device |
| AU45031/85A AU569989B2 (en) | 1984-07-19 | 1985-07-16 | Series connected photovoltaic cells |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59151705A JPS6130082A (en) | 1984-07-20 | 1984-07-20 | Photovoltaic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6130082A true JPS6130082A (en) | 1986-02-12 |
Family
ID=15524462
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59151705A Pending JPS6130082A (en) | 1984-07-19 | 1984-07-20 | Photovoltaic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6130082A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007086522A1 (en) * | 2006-01-30 | 2007-08-02 | Honda Motor Co., Ltd. | Solar cell and manufacturing method thereof |
| JP2009289817A (en) * | 2008-05-27 | 2009-12-10 | Mitsubishi Electric Corp | Photoelectric conversion device and method of manufacturing the same |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5613778A (en) * | 1979-07-16 | 1981-02-10 | Shunpei Yamazaki | Photoelectric converter and its preparation |
| JPS5713775A (en) * | 1980-06-28 | 1982-01-23 | Agency Of Ind Science & Technol | Photocell structure and manufacture thereof |
| JPS59103383A (en) * | 1982-12-03 | 1984-06-14 | Sanyo Electric Co Ltd | Manufacture for photovoltaic force generating device |
| JPS59190587A (en) * | 1983-04-14 | 1984-10-29 | Toshiba Corp | High differential pressure control valve |
-
1984
- 1984-07-20 JP JP59151705A patent/JPS6130082A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5613778A (en) * | 1979-07-16 | 1981-02-10 | Shunpei Yamazaki | Photoelectric converter and its preparation |
| JPS5713775A (en) * | 1980-06-28 | 1982-01-23 | Agency Of Ind Science & Technol | Photocell structure and manufacture thereof |
| JPS59103383A (en) * | 1982-12-03 | 1984-06-14 | Sanyo Electric Co Ltd | Manufacture for photovoltaic force generating device |
| JPS59190587A (en) * | 1983-04-14 | 1984-10-29 | Toshiba Corp | High differential pressure control valve |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007086522A1 (en) * | 2006-01-30 | 2007-08-02 | Honda Motor Co., Ltd. | Solar cell and manufacturing method thereof |
| JP2007201302A (en) * | 2006-01-30 | 2007-08-09 | Honda Motor Co Ltd | Solar cell and its manufacturing method |
| JP2009289817A (en) * | 2008-05-27 | 2009-12-10 | Mitsubishi Electric Corp | Photoelectric conversion device and method of manufacturing the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4542578A (en) | Method of manufacturing photovoltaic device | |
| JP2001274447A (en) | Method of manufacturing integrated thin film solar battery | |
| JPH053151B2 (en) | ||
| JPS6130082A (en) | Photovoltaic device | |
| JPS6213829B2 (en) | ||
| JP3155459B2 (en) | Manufacturing method of integrated amorphous semiconductor solar cell and integrated amorphous semiconductor solar cell | |
| JPS62242371A (en) | Manufacture of photovoltaic device | |
| JPS61187379A (en) | Manufacture of photovoltaic device | |
| JPH0815223B2 (en) | Photovoltaic device manufacturing method | |
| JPS63194370A (en) | Manufacture of photovoltaic device | |
| JPH0519991B2 (en) | ||
| JPH03250771A (en) | Manufacture of photovoltaic device | |
| JPH065779B2 (en) | Method for manufacturing solar cell device | |
| JPS61164274A (en) | Manufacture of photovoltaic device | |
| JPS6129178A (en) | Manufacture of photovoltaic device | |
| JPH0691269B2 (en) | Method for manufacturing amorphous silicon solar cell | |
| JP2975749B2 (en) | Method for manufacturing photovoltaic device | |
| JP2744058B2 (en) | Method for manufacturing photovoltaic device | |
| JPS6060776A (en) | Manufacture of photovoltaic device | |
| JPH0560273B2 (en) | ||
| JPH0642351Y2 (en) | Photovoltaic device | |
| JPS62147784A (en) | Amorphous solar cell and manufacture thereof | |
| JPS61228679A (en) | Optical generator | |
| JP2771653B2 (en) | Method for manufacturing photovoltaic device | |
| JP2012038853A (en) | Manufacturing method of thin-film photoelectric conversion device |