JPS61290351A - High molecular thin film moisture-sensitive element - Google Patents
High molecular thin film moisture-sensitive elementInfo
- Publication number
- JPS61290351A JPS61290351A JP60130796A JP13079685A JPS61290351A JP S61290351 A JPS61290351 A JP S61290351A JP 60130796 A JP60130796 A JP 60130796A JP 13079685 A JP13079685 A JP 13079685A JP S61290351 A JPS61290351 A JP S61290351A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- high molecular
- chlorine
- molecular thin
- insulating substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Polymerisation Methods In General (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Non-Adjustable Resistors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、高分子薄膜感湿素子に関する。更に詳しくは
、広範囲の相対湿度が精度および応答性よく測定でき、
しかも製作の容易な高分子薄膜感湿素子に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a polymer thin film moisture sensitive element. More specifically, relative humidity can be measured over a wide range with high accuracy and responsiveness.
Moreover, the present invention relates to a polymer thin film moisture sensitive element that is easy to manufacture.
高分子薄膜タイプの湿度センサー素子としては。 As a polymer thin film type humidity sensor element.
多数のものが発表されているが、性能的に有望と考えら
れるものは比較的少ない。こうした中で、有機シリコン
化合物をプラズマ重合によって、感湿膜とする例が、Ｔ
ｈ１ｎ ５ｏｌｉｄ Ｆｉ１ｍｓ第１１８巻第２２５〜
２３０頁（１９８４）に記載されており、これは有望な
素子の一つと考えられている。A large number of methods have been announced, but relatively few are considered promising in terms of performance. Under these circumstances, an example of making a moisture-sensitive film by plasma polymerizing an organic silicon compound is T.
h1n 5olid Fi1ms Vol. 118 No. 225~
230 (1984), and is considered to be one of the promising devices.
しかしながら、この素子の場合には、プラズマ重合膜を
臭化メチル処理することによって始めて感湿性を発現さ
せるものであって、この臭化メチル処理は、臭化メチル
が揮発性でありまた条件によって性能にバラツキがみら
れるため、その処理工程が複雑となる。However, in the case of this device, moisture sensitivity is only developed by treating the plasma polymerized film with methyl bromide. Since there are variations in the results, the processing process becomes complicated.
本発明者は、このような製作工程上の難点を避け、しか
もすぐれた感湿特性を示す高分子薄膜を求めて種々検討
の結果、感湿膜を特定の高分子薄膜で形成させることに
より、かかる課題が有効に解決されることを見出した。The inventor of the present invention sought a thin polymer film that avoids such difficulties in the production process and exhibits excellent moisture-sensitive properties.As a result of various studies, the inventors found that by forming a moisture-sensitive film using a specific thin polymer film, It has been found that this problem can be effectively solved.
〔問題点を解決するための手段〕および〔作用〕従って
、本発明は高分子薄膜感湿素子に係り、この高分子薄膜
感湿素子は、絶縁性基板の上に設けられた導電性くし型
電極を塩素含有高分子薄膜で覆ってなる。[Means for Solving the Problems] and [Operation] Accordingly, the present invention relates to a polymer thin film moisture sensitive element, which comprises a conductive comb-shaped element provided on an insulating substrate. The electrode is covered with a chlorine-containing polymer thin film.
絶縁性基板上への導電性くし型電極の形成は、従来の例
にならって行われる。即ち、ガラス、アルミナ、石英な
どの絶縁性基板上に、ステンレススチール、ハステロイ
Ｃ、インコネル、モネル、金、銀、銅、白金、アルミニ
ウム、鉄、コバルト、ニッケルなどの耐食性金属や電極
形成材料金属をスパッタリング法、イオンブレーティン
グ法などにより、約０．１〜０．５μｍ程度の厚さの薄
膜を形成させ１次にそこにフォトレジストパターンを形
成させる。Formation of the conductive comb-shaped electrodes on the insulating substrate is carried out according to conventional methods. That is, corrosion-resistant metals such as stainless steel, Hastelloy C, Inconel, Monel, gold, silver, copper, platinum, aluminum, iron, cobalt, nickel, and electrode forming material metals are placed on an insulating substrate such as glass, alumina, and quartz. A thin film having a thickness of approximately 0.1 to 0.5 μm is formed by a sputtering method, an ion blasting method, or the like, and then a photoresist pattern is formed thereon.
例えばアルミニウムの場合には、このようにして形成さ
れた電極形成材料金属薄膜へのフォトレジストパターン
の形成は、周知のフォトリソグラフ技術を適用すること
によって行われる。即ち、金属薄膜上にフォトレジスト
コーティングを行ない、そこにくし型電極のパターンの
陰画または陽画を焼付けたガラス乾板を重ね、光照射に
よる焼付けおよび現像によって行われる。この後、湿式
化学エツチングが行われるが、エツチング液としては、
リン酸−硫酸−無水クロム酸−水（重量比６５ ： １
５ ： ５ ： １５）混合液、ＢＨＦ （フッ酸系）
、塩化第２鉄水溶液、硝酸、リン酸−硝酸混合液などが
用いられる。For example, in the case of aluminum, a photoresist pattern is formed on the metal thin film of the electrode forming material thus formed by applying a well-known photolithography technique. That is, a photoresist coating is applied to a metal thin film, a glass dry plate on which a negative or positive image of a comb-shaped electrode pattern is printed is placed on top of the photoresist coating, and the photoresist is baked by light irradiation and developed. After this, wet chemical etching is performed, but the etching solution is
Phosphoric acid-sulfuric acid-chromic anhydride-water (weight ratio 65:1
5:5:15) Mixed liquid, BHF (hydrofluoric acid)
, ferric chloride aqueous solution, nitric acid, phosphoric acid-nitric acid mixture, etc. are used.
このようにして絶縁性基板上に形成させた導電性くし型
電極の表面は、感湿特性にすぐれた塩素含有高分子薄膜
によって覆われる。この高分子薄膜の形成は、一般にプ
ラズマ重合法によって行われ、プラズマ重合される単量
体としては、例えば塩化ビニリデン、塩化ビニルまたは
これらの混合物などが用いられる。後記実施例の結果に
示されるように、プラズマ重合条件の検討から、単量体
圧力が約０．１〜０．５Ｔｏｒｒ、また電力が約２５Ｗ
以下の場合にのみ、すぐれた感湿特性を示す薄膜が得ら
れる。The surface of the conductive comb-shaped electrode thus formed on the insulating substrate is covered with a chlorine-containing polymer thin film having excellent moisture sensitivity. The formation of this polymer thin film is generally carried out by plasma polymerization, and the monomer to be plasma polymerized includes, for example, vinylidene chloride, vinyl chloride, or a mixture thereof. As shown in the results of the examples below, from the examination of the plasma polymerization conditions, the monomer pressure was about 0.1 to 0.5 Torr, and the electric power was about 25 W.
Thin films exhibiting good moisture-sensitive properties are obtained only if:
図面の第１図は、本発明に係る高分子薄膜感湿素子の一
態様を示すそれの平面図であり、絶縁性基板１上に導電
性くし型電極２，２′が形成され、その表面は一般に約
０．２〜０．６μｍ程度の厚さ番有するプラズマ重合膜
３によって覆われており、この重合膜によって覆われて
いない取出電極部分には半田付けあるいは銀ペースト４
，４′により。FIG. 1 of the drawings is a plan view showing one embodiment of the polymer thin film moisture-sensitive element according to the present invention, in which conductive comb-shaped electrodes 2, 2' are formed on an insulating substrate 1, and the surface thereof is is generally covered with a plasma polymerized film 3 having a thickness of approximately 0.2 to 0.6 μm, and the lead-out electrode portion not covered by this polymerized film is soldered or coated with silver paste 4.
, 4'.
リード線５，５′が取り付けられている。Lead wires 5, 5' are attached.
本発明に係る高分子薄膜感湿素子は、絶縁性基板の上に
設けられた導電性くし型電極の上を、塩素含有高分子薄
膜、好ましくは塩化ビニリデンなどのプラズマ重合膜で
覆うだけであるので、複雑な工程を経ることなく、プラ
ズマ重合条件の設定だけで、性能の安定した素子が容易
に得られる。The polymer thin film moisture sensitive element according to the present invention simply covers the conductive comb-shaped electrodes provided on the insulating substrate with a chlorine-containing polymer thin film, preferably a plasma polymerized film of vinylidene chloride or the like. Therefore, devices with stable performance can be easily obtained by simply setting plasma polymerization conditions without going through complicated steps.
しかも、得られた素子は、薄膜であるために応答速度が
速く、広範囲の相対湿度を精度よく検出できるというす
ぐれた感湿特性を示している。Furthermore, since the obtained element is a thin film, the response speed is fast, and it exhibits excellent moisture sensitivity characteristics that allow it to accurately detect relative humidity over a wide range.
次に、実施例について本発明を説明する。 Next, the present invention will be explained with reference to examples.
実施例
絶縁性基板として石英ガラスを用い、その表面にアルミ
ニウムーけい素（９９：１）のスパッタリング膜を約０
．３μｍの厚さで形成させ、この薄膜にフォトレジスト
パターンを形成させた後、湿式化学エツチングすること
により、幅１００μＩ、間隔１００μｍの線状歯を１３
ｎａの長さで多数本形成させ、その長さの内１１＋ｎｍ
に相当する部分で互いに対向する線状歯同士が噛み合っ
ているような状態のくし型電極を形成させた。EXAMPLE A quartz glass is used as an insulating substrate, and a sputtered film of aluminum-silicon (99:1) is applied to the surface of the insulating substrate.
．． After forming a photoresist pattern on this thin film with a thickness of 3 μm, wet chemical etching was performed to form linear teeth with a width of 100 μI and an interval of 100 μm.
A large number of fibers with a length of na are formed, and 11+nm of the length is formed.
A comb-shaped electrode was formed in which linear teeth facing each other were engaged with each other in the portion corresponding to .
次いでこのくし型電極部分を十分覆うように、塩化ビニ
リデンのプラズマ重合膜を電力２０Ｗで、種々の単量体
圧力条件下で形成させた。Next, a plasma polymerized film of vinylidene chloride was formed at a power of 20 W under various monomer pressure conditions so as to sufficiently cover the comb-shaped electrode portion.
孤 、乳量１１ツバに吋
Ａ Ｏ，０２
Ｂ Ｏ，０５
ＣＯ，■
Ｄｏ、３
これらの高分子薄膜感湿素子について、相対湿
１ｆｆｉ４０〜９５％ ｌｔ［ｋ、−オｉｔ ！
−ｍ＠、ｆｆｉ ｔ、［１！ ｋ、 １．１２
図のグラフに示されるような結果が得られ、単量体圧力
が約０．１〜０．５Ｔｏｒｒの条件下でプラズマ重合さ
せたもののみが、すぐれた感湿特性を示す高分子薄膜感
湿素子を形成させることが分った。また、電力について
は、一般に素子抵抗が低い程回路の測定がし易く、電力
が例えば３０Ｗになると。The relative humidity of these polymer thin film moisture sensing elements is as follows:
1ffi40~95% lt[k,-oit!
-m@, ffit, [1! k, 1.12
The results shown in the graph in the figure were obtained, and only the polymer thin film that was plasma polymerized under conditions of monomer pressure of about 0.1 to 0.5 Torr exhibited excellent moisture-sensitive properties. It was found that an element could be formed. Regarding power, in general, the lower the element resistance, the easier it is to measure the circuit, and for example, when the power is 30W.
単量体圧力が上記範囲内であっても、相対湿度４０％で
素子抵抗が１０５Ω以上になり好ましくないので、電力
については約２５Ｗ以下であることが好ましい。Even if the monomer pressure is within the above range, the element resistance becomes 105Ω or more at a relative humidity of 40%, which is undesirable, so the electric power is preferably about 25W or less.
第１図は、本発明に係る高分子薄膜感湿素子の一態様を
示すそれの平面図である。第２図は、実施例で種々の重
合条件下で形成させたプラズマ重合膜を有する薄膜感湿
素子を用いた測定結果を示すグラフである。
（符号の説明）
１・・・・・絶縁性基板
２・・・・・導電性くし型電極
３・・・・・プラズマ重合膜FIG. 1 is a plan view showing one embodiment of the polymer thin film moisture-sensitive element according to the present invention. FIG. 2 is a graph showing measurement results using thin film moisture sensitive elements having plasma polymerized films formed under various polymerization conditions in Examples. (Explanation of symbols) 1... Insulating substrate 2... Conductive comb-shaped electrode 3... Plasma polymerized film
Claims (1)
素含有高分子薄膜で覆ってなる高分子薄膜感湿素子。 ２、塩素含有高分子薄膜が塩化ビニリデンのプラズマ重
合膜である特許請求の範囲第１項記載の高分子薄膜感湿
素子。[Claims] 1. A polymer thin film moisture-sensitive element comprising a conductive comb-shaped electrode provided on an insulating substrate and covered with a chlorine-containing polymer thin film. 2. The polymer thin film moisture-sensitive device according to claim 1, wherein the chlorine-containing polymer thin film is a plasma polymerized film of vinylidene chloride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60130796A JPS61290351A (en) | 1985-06-18 | 1985-06-18 | High molecular thin film moisture-sensitive element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60130796A JPS61290351A (en) | 1985-06-18 | 1985-06-18 | High molecular thin film moisture-sensitive element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61290351A true JPS61290351A (en) | 1986-12-20 |
| JPH0525064B2 JPH0525064B2 (en) | 1993-04-09 |
Family
ID=15042898
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60130796A Granted JPS61290351A (en) | 1985-06-18 | 1985-06-18 | High molecular thin film moisture-sensitive element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61290351A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BRPI0502980A (en) | 2005-07-20 | 2007-03-06 | Mahle Metal Leve Sa | internal combustion engine oil control ring |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5924234A (en) * | 1982-07-31 | 1984-02-07 | Shimadzu Corp | Humidity sensor and manufacture thereof |
-
1985
- 1985-06-18 JP JP60130796A patent/JPS61290351A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5924234A (en) * | 1982-07-31 | 1984-02-07 | Shimadzu Corp | Humidity sensor and manufacture thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0525064B2 (en) | 1993-04-09 |
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