JPS61284544A - Copper alloy for semiconductor element - Google Patents
Copper alloy for semiconductor elementInfo
- Publication number
- JPS61284544A JPS61284544A JP12666185A JP12666185A JPS61284544A JP S61284544 A JPS61284544 A JP S61284544A JP 12666185 A JP12666185 A JP 12666185A JP 12666185 A JP12666185 A JP 12666185A JP S61284544 A JPS61284544 A JP S61284544A
- Authority
- JP
- Japan
- Prior art keywords
- copper
- weight
- alloy
- content
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Conductive Materials (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、 ＩＯ，）ランジスタおよびダイオード
などの半導体素子におけるリードフレーム。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] This invention relates to lead frames for semiconductor devices such as IOs, transistors and diodes.
またはベースとして使用する半導体素子用銅合金に関す
るものである。Or it relates to a copper alloy for semiconductor devices used as a base.
ＩＣ，）ランジスタおよびダイオードなどの半導体素子
は、一般に板または条から打抜加工またはエツチング（
腐食）によってリードフレームを形成し、このリードフ
レームに必要に応じてＡｇ。Semiconductor devices such as ICs, ) transistors and diodes are generally stamped or etched from plates or strips.
A lead frame is formed by corrosion), and Ag is applied to this lead frame as necessary.
Ａｎ、 Ｎｉおよび１ｌｉｎなどのメッキを施し、こ
れらのリードフレームにｓｉ＋Ｇｅ を基材として構
成されるＩＣチップなどをろう付け、およびこれへのＡ
ｕ線などによるワイヤポンディングの接続を行ない、つ
いで上記工程によって製造された半導体チップとボンデ
ィングワイヤを樹脂あるいはセラミックにより封じこめ
る（モールディング）作業工程等によって製造されてい
る。Plating with An, Ni, 1lin, etc. is applied, and IC chips made of Si+Ge are brazed to these lead frames, and A is applied to these lead frames.
It is manufactured by a process such as a process in which a wire bonding connection is made using a U-wire or the like, and then the semiconductor chip and bonding wire manufactured by the above process are sealed in resin or ceramic (molding).
上記の半導体製造工程におけるきびしい作業条件と、最
近の高集積密度化による発熱に対する熱放散に対処する
ために、リードフレーム材料に対しては高い熱伝導性に
相関関係にある高い導電率（２０〜３０％ＩＡＯ８以上
）と高い機械的強度（５０ｋｇｆ／−以上）が要求され
る。この他、上記製造工程におけるＡｇｅ Ａｕ、 Ｎ
ｉ及びａｍなどのめつき金属の密着性や素子をプリント
基板へ実装するためのはんだ付は性も併せて要求される
。 “従来、上記の要求を満足する代表的なリードフレ
ーム用銅合金としては、０ｕ−８ｎ合金や０ｕ−Ｎｉ−
Ｓ ｎ合金、０ｕ−ｐｅ金合金どが使用されている。In order to cope with the severe working conditions in the semiconductor manufacturing process mentioned above and the heat dissipation due to the recent increase in integration density, lead frame materials are required to have high electrical conductivity (20~ 30% IAO8 or higher) and high mechanical strength (50 kgf/- or higher) are required. In addition, Age Au, N in the above manufacturing process
Adhesion of plating metals such as i and am and soldering properties for mounting elements on printed circuit boards are also required. “Conventionally, typical copper alloys for lead frames that satisfy the above requirements include 0u-8n alloy and 0u-Ni-
Sn alloy, Ou-pe gold alloy, etc. are used.
これらの材料のなかで代表的なものとしては、りん青銅
（Ｏｕ−５重量％、８Ｑ−Ｑ、１重量％−Ｐ）では、引
張強さ５３ｋｇｆ／ｊ、伸び８％、導電率１６％工ＡＯ
８であり、またＯｕ −０，２重量％Ｎｉ−２重量％８
ｎでは引張強さ５０〜６５ ｋｇｆ／ｊ 、伸び９％以
上。Typical of these materials is phosphor bronze (Ou-5% by weight, 8Q-Q, 1% by weight-P), which has a tensile strength of 53 kgf/j, an elongation of 8%, and a conductivity of 16%. A.O.
8, and Ou -0,2% by weight Ni-2% by weight 8
n has a tensile strength of 50 to 65 kgf/j and an elongation of 9% or more.
導電率３０％ＩＡＯ８の諸特性を示している。Various characteristics of IAO8 with a conductivity of 30% are shown.
しかしながら、上記ｏｕ−ｓｎ系や０ｕ−Ｎｉ−８ｎ系
のリードフレーム用鋼合金では９機械的強度やはんだ付
性等の特性にすぐれているにも拘らず、最近とみに高集
積化される工０の用途、 きびしい製造工程や信頼性に
対する基準の面かた要求されるより高い熱伝導性（５０
％ＩＡＯ８以上）に対してはやや不充分な特性であると
いう問題点があった。However, despite the above-mentioned ou-sn and 0u-Ni-8n lead frame steel alloys having excellent properties such as mechanical strength and solderability, they have recently become more and more highly integrated. applications, demanding manufacturing processes and reliability standards require higher thermal conductivity (50
%IAO of 8 or higher), there was a problem in that the properties were somewhat insufficient.
この発明は上記のような問題点を解消するためになされ
たもので、製造条件がきびしい半導体素子例えばリード
フレームに要求される熱伝導性。This invention was made to solve the above-mentioned problems, and the thermal conductivity required for semiconductor elements, such as lead frames, which have strict manufacturing conditions.
機械的強度およびめっき金属の密着性はんだ付性などの
諸特性が調和のとれたすぐれた半導体素子用鋼合金を提
供するものである。The present invention provides an excellent steel alloy for semiconductor devices that has well-balanced properties such as mechanical strength, adhesion of plated metal, and solderability.
この発明の半導体素子用鋼合金は、銅を主成分として、
００２８１を０．３〜３劃重量％含有し、酸素含有
量が０．００１０重量％以下のものである。The steel alloy for semiconductor devices of this invention has copper as a main component,
It contains 0.3 to 3% by weight of 00281 and has an oxygen content of 0.0010% by weight or less.
この発明における００２８１は導電性を低下させる効果
の大きなｓｉをＣＯとの金属間化合物として析出させた
ものであるので０機械的強度の増加とともに導電率の増
加を図ることができる。さらに酸素含有量が（ＬＯＧＩ
Ｏ重量％以下と少ないので、 めっき金属の密着性及び
はんだ付は性が良好になる。Since 00281 in this invention is a product in which Si, which has a large effect of reducing conductivity, is precipitated as an intermetallic compound with CO, it is possible to increase electrical conductivity as well as increase in mechanical strength. In addition, the oxygen content (LOGI
Since the content is as low as 0% by weight or less, the adhesion and soldering properties of plated metals are improved.
この発明の半導体素子用鋼合金は主成分であるＯｕ’に
Ｃｏ及び８ｉを添加した合金を溶製し、高温の溶体化処
理と低温の析出硬化処理によって、母相（Ｏｕ ）に０
０２８１の金属間化合物を析出させたもので、 ００
２８１の含有量が０．３〜１８重量％、酸素含有量が０
．００１０重量％のものである。The steel alloy for semiconductor devices of the present invention is produced by melting an alloy in which Co and 8i are added to Ou', which is the main component, and is subjected to high-temperature solution treatment and low-temperature precipitation hardening treatment, so that the parent phase (Ou) has zero
0281 intermetallic compound precipitated, 00
281 content is 0.3 to 18% by weight, oxygen content is 0
．． 0010% by weight.
以下、この発明の一実施例について説明する。An embodiment of the present invention will be described below.
高周波溶解炉を用いてＯｕを溶解し、湯面な木炭で被覆
した後、先ず００を添加し溶融後Ｓｉを添加し、以下に
示す合金組成範囲の鋳塊φ５Ｑｍ×１００鰭を得た。After melting O using a high frequency melting furnace and covering it with hot charcoal, 00 was added first, and after melting, Si was added to obtain an ingot φ5Qm x 100 fins having the alloy composition range shown below.
合金の組成
Ｏｏ ： ０．２〜４．５重量％Ｓｉ ：
Ｉｌｌ、１〜１．０重量％酸素 ： ｏ、ｏｏ１ｏ
重量％以下
これらの鋳塊を面削後８００℃に加熱して熱間圧延によ
り厚さ１０ｆｌまで圧延し、圧延後ただちに急冷した。Alloy composition Oo: 0.2-4.5% by weight Si:
Ill, 1-1.0% by weight oxygen: o, oo1o
Weight % or less After facing these ingots, they were heated to 800° C. and hot rolled to a thickness of 10 fl, and immediately after rolling, they were rapidly cooled.
ついでこの板材を冷間圧延と６０（ｌの軟化焼鈍を繰返
し、厚さ０．８ｕの板材を製作し。This plate material was then subjected to repeated cold rolling and softening annealing for 60 l to produce a plate material with a thickness of 0.8 μ.
９００℃で１時間加熱後ただちに急冷後、厚さ０．４鱈
まで冷間圧延し、４８０℃で２時間の時効処理を実施し
た。これら、の板材から試験片を採取して。After heating at 900°C for 1 hour, the product was immediately cooled down, cold-rolled to a thickness of 0.4°C, and aged at 480°C for 2 hours. Test pieces were taken from these plates.
機械的強度、導電率、めっき金属の密着性、はんだ付性
等について測定した。Mechanical strength, electrical conductivity, adhesion of plated metal, solderability, etc. were measured.
図面は上記のように製作したこの発明の一実施例の半導
体素子用鋼合金の００□ｓｉ含有量と引張強さ、伸び及
び導電率の関係を示す特性図で、横軸は００２８１含有
量（重量％）を、縦軸は引張強さく ｋｇｆ／、Ａ ）
伸び（％）及び導電率（％ＩＡＯ８）を表わす。なお特
性曲線Ａは引張強さ、Ｂは導電率。The drawing is a characteristic diagram showing the relationship between the 00□si content, tensile strength, elongation, and electrical conductivity of a steel alloy for semiconductor devices according to an embodiment of the present invention manufactured as described above, and the horizontal axis represents the 00281 content ( weight%), and the vertical axis is tensile strength kgf/, A)
Expresses elongation (%) and electrical conductivity (%IAO8). Characteristic curve A is tensile strength, and characteristic curve B is electrical conductivity.
０は伸びの特性を表わしている。図かられかるように、
この半導体素子用鋼合金では、 Ｏｕ ００２Ｓｌ
系として００２８１が０．３重量％以下では引張強さが
低く強度が不足し、 ００２８１が１８重量％以下で
は強度はやや増加するが、導電率が５０％より著しく低
下する。従ってこの半導体素子用鋼合金では。0 represents the elongation characteristic. As you can see from the diagram,
In this steel alloy for semiconductor devices, Ou 002Sl
When 00281 is less than 0.3% by weight, the tensile strength is low and the strength is insufficient, and when 00281 is less than 18% by weight, the strength slightly increases, but the electrical conductivity is significantly lower than 50%. Therefore, in this steel alloy for semiconductor devices.
Ｏｕ ００２８１系として００２８１の０．３〜３．
８重量％の組成の範囲において、引張強さ５０ｋｇｆ／
−以上。Ou 00281 series is 0.3 to 3.
In the composition range of 8% by weight, the tensile strength is 50kgf/
-That's all.
伸び１０％以上、導電率５０％以上と機械的性質と導電
率の点で、従来の０ｕ−８ｕ合金や０ｕ−Ｎｔ −ａｎ
合金では得られなかった調和がとれた特性が得られた。In terms of mechanical properties and electrical conductivity, elongation is 10% or more and electrical conductivity is 50% or more.
Harmonious properties that could not be obtained with alloys were obtained.
次に上記組成で、比較例として酸素成分を０．００２〜
０．００４重量％と多くした合金を製作し、この発明の
実施例の酸素成分がＱ、０００８重量笈の合金とに。Next, with the above composition, as a comparative example, the oxygen component was
An alloy with an increased oxygen content of 0.004% by weight was prepared, and an alloy with an oxygen content of Q and a weight of 0008% was prepared.
Ａｇめつきを施し、４００″Ｃで５分間加熱して加熱前
後のめつき面に形成されるフクレの状況を観察した。こ
の結果１合金中の酸素成分が０．００２〜０、００４重
量％の比較試料では直径が１００μｍ以上のフクレの発
生が急増する現象が確認された。従つて酸素含有量（固
溶酸素量）が０．００１０ 重量％以上ではめつき密
着性が悪くなるので、それ以下が良い。Ag plating was applied and heated at 400"C for 5 minutes to observe the blisters formed on the plated surface before and after heating. As a result, the oxygen content in alloy 1 was 0.002 to 0.004% by weight. A phenomenon in which the occurrence of blisters with a diameter of 100 μm or more rapidly increased was confirmed in the comparison sample.Therefore, if the oxygen content (solid dissolved oxygen amount) exceeds 0.0010% by weight, plating adhesion deteriorates. The following is good.
また、上記のこの発明の合金について、Ａｇめっき工程
時のめっき性につき表面観察した結果。Also, the results of surface observation regarding the plating properties during the Ag plating process for the above-mentioned alloy of the present invention.
従来のｏｕ−ｓｎ合金や０ｕ−Ｎｉ−ａｎ合金と同様に
良好なＡｇめつき性を示すことも併せて確認された。It was also confirmed that it exhibited good Ag plating properties similar to conventional ou-sn alloys and 0u-Ni-an alloys.
上記のほか、この発明の合金のａｎ−Ｐｂはんだによる
はんだ付性やＡｇろ５によるろう付性について調べた結
果、この合金が成分元素としてＳｉを含有していること
および残留して固溶している酸素を制限していることか
ら良好なはんだ付性やろう付は性を示した。In addition to the above, as a result of investigating the solderability of the alloy of this invention with an-Pb solder and the brazeability with Aggro 5, it was found that this alloy contains Si as a component element and that it remains in solid solution. Good solderability and brazing properties were achieved due to the limited oxygen content.
また、この発明の合金では、製造の最終工程における析
出硬化処理前後の加工率と時効処理における温度および
時間を変化させることにより、引張強さ、伸び、導電率
の相互の関係を図面で示した関係から数十％程度変化さ
せた特性を、任意にえらぶこともできる。In addition, in the alloy of this invention, the mutual relationships among tensile strength, elongation, and electrical conductivity were shown in drawings by changing the processing rate before and after precipitation hardening treatment in the final manufacturing process, and the temperature and time in aging treatment. It is also possible to arbitrarily select characteristics that are changed by several tens of percent from the relationship.
なお、この発明の合金にＰ、Ｂ、Ｍｎ等を０．ｌＨ〜０
．１重量％程度添加することにより、鋳造性が良くなる
。Note that 0.00% of P, B, Mn, etc. are added to the alloy of this invention. lH~0
．． Addition of about 1% by weight improves castability.
以上のように、この発明によれば半導体素子用鋼合金を
、銅を主成分として００□８１を０．３〜３．８重量％
含有し、酸素含有量がｏ、ｏｏｔｏ重量％以下にするこ
とにより、引張強さ５０ｋｇｆ／−以上、導電率５０％
ＩＡＯＩ９以上の調和のとれた機械的特性と導電性（熱
伝導性）とが得られ、さらにめっきの密着性、はんだ付
は性及びろう付性にも優れるという効果がある。As described above, according to the present invention, a steel alloy for semiconductor devices is produced in which copper is the main component and 00□81 is contained in an amount of 0.3 to 3.8% by weight.
By keeping the oxygen content below o, ooto weight%, the tensile strength is 50 kgf/- or more and the electrical conductivity is 50%.
It has the effect of providing well-balanced mechanical properties and electrical conductivity (thermal conductivity) with an IAOI of 9 or higher, as well as excellent plating adhesion, soldering properties, and brazing properties.
図面はこの発明の一実施例の半導体素子用鋼合金の特性
図である。The drawing is a characteristic diagram of a steel alloy for semiconductor devices according to an embodiment of the present invention.
Claims (1)
％含有し、酸素含有量が０．００１０重量％以下の半導
体素子用銅合金。A copper alloy for semiconductor devices, which contains copper as a main component, contains 0.3 to 3.8% by weight of Co_2Si, and has an oxygen content of 0.0010% by weight or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12666185A JPS61284544A (en) | 1985-06-11 | 1985-06-11 | Copper alloy for semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12666185A JPS61284544A (en) | 1985-06-11 | 1985-06-11 | Copper alloy for semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61284544A true JPS61284544A (en) | 1986-12-15 |
Family
ID=14940737
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12666185A Pending JPS61284544A (en) | 1985-06-11 | 1985-06-11 | Copper alloy for semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61284544A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0281038A2 (en) * | 1987-03-04 | 1988-09-07 | Nippon Mining Company Limited | Film carrier and method of manufacturing same |
| JP2008056977A (en) * | 2006-08-30 | 2008-03-13 | Mitsubishi Electric Corp | Copper alloy and its production method |
-
1985
- 1985-06-11 JP JP12666185A patent/JPS61284544A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0281038A2 (en) * | 1987-03-04 | 1988-09-07 | Nippon Mining Company Limited | Film carrier and method of manufacturing same |
| JP2008056977A (en) * | 2006-08-30 | 2008-03-13 | Mitsubishi Electric Corp | Copper alloy and its production method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3550233B2 (en) | Manufacturing method of high strength and high conductivity copper base alloy | |
| JPS61183426A (en) | High strength, highly conductive heat resisting copper alloy | |
| KR950013290B1 (en) | Material for conductive parts of electronic and electric appliances | |
| JPS6254048A (en) | Copper alloy for lead frame | |
| JPS6314056B2 (en) | ||
| KR950013291B1 (en) | Material for conductive parts of electronic and electric appliances | |
| JPS60218440A (en) | Copper alloy for lead frame | |
| EP0189745B1 (en) | Lead material for ceramic package ic | |
| JPS6254852B2 (en) | ||
| JP3772319B2 (en) | Copper alloy for lead frame and manufacturing method thereof | |
| JPH02163331A (en) | High strength and high conductivity copper alloy having excellent adhesion for oxidized film | |
| JPS6239218B2 (en) | ||
| JPH0788549B2 (en) | Copper alloy for semiconductor equipment and its manufacturing method | |
| JPS61284544A (en) | Copper alloy for semiconductor element | |
| JP2797846B2 (en) | Cu alloy lead frame material for resin-encapsulated semiconductor devices | |
| JPH0425339B2 (en) | ||
| JPS594493B2 (en) | Copper alloy for lead material of semiconductor equipment | |
| JPH034613B2 (en) | ||
| JPS6250426A (en) | Copper alloy for electronic appliance | |
| JP2504956B2 (en) | Copper alloy for electronic equipment with excellent plating adhesion and solder bondability and its manufacturing method | |
| JPH034612B2 (en) | ||
| JP2662209B2 (en) | Copper alloy for electronic equipment with excellent plating adhesion and solder bondability and its manufacturing method | |
| JPS6365038A (en) | Copper alloy for electronic and electrical equipment | |
| JPS58147140A (en) | Lead wire of semiconductor device | |
| JPS6320906B2 (en) |