JPS61270885A - Semiconductor light emitting element - Google Patents
Semiconductor light emitting elementInfo
- Publication number
- JPS61270885A JPS61270885A JP60112589A JP11258985A JPS61270885A JP S61270885 A JPS61270885 A JP S61270885A JP 60112589 A JP60112589 A JP 60112589A JP 11258985 A JP11258985 A JP 11258985A JP S61270885 A JPS61270885 A JP S61270885A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor
- light emitting
- thin film
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
- H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06203—Transistor-type lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は半導体レーザ、発光トランジスタ、レーザトラ
ンジスタなどの半導体発光素子に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to semiconductor light emitting devices such as semiconductor lasers, light emitting transistors, and laser transistors.
従来の技術
従来のレーザトランジスタあるいは発光トランジスタは
１つ以上のへテロ接合を持つトランジスタ構造を持って
いる（例えば、特願昭５９−７３３８０号）。BACKGROUND OF THE INVENTION A conventional laser transistor or light emitting transistor has a transistor structure having one or more heterojunctions (for example, see Japanese Patent Application No. 73380/1983).
例えば第５図に示す素子はレーザトランジスタで、ベー
ス層５０１にＰ型ＩｎＧａＡｓＰ、エミッタ層５０２と
コレクタ層５０３にｎ型ＩｎＰ層を用いた縦型のｎｐｎ
型トランジスタ構造を持っている。ベース層５０１にＩ
ｎＰと比べて小゛バンドギャップエネルギー、高屈折率
を持つＩｎＧａＡｓＰを用いたことで、縦方向の光とキ
ャリアが双方のとじこめを行なっている。また、グラフ
トベース層５０５はベース層５０１への良好な電流供給
と横方向の光のとじこめを行なっている。５０４はｎ型
ＩｎＰ基板、５０６はエミッタ電極、５０７はベース電
極、５０ｇ・・・コレクタ電極、ＡとＢはミラー面を示
す。For example, the device shown in FIG. 5 is a laser transistor, which is a vertical npn laser transistor using P-type InGaAsP for the base layer 501 and n-type InP layers for the emitter layer 502 and collector layer 503.
It has a type transistor structure. I in the base layer 501
By using InGaAsP, which has a smaller bandgap energy and higher refractive index than nP, both light and carriers in the vertical direction are confined. Furthermore, the graft base layer 505 provides good current supply to the base layer 501 and lateral light confinement. 504 is an n-type InP substrate, 506 is an emitter electrode, 507 is a base electrode, 50g...collector electrode, and A and B are mirror surfaces.
この素子は、例えば第６図のエミッタ接地の回路構成を
用いて駆動する。６０２は抵抗器、６０３はレーザビー
ムを表わす。発光させるときは第９図（イ）のようにト
ランジスタ動作における飽和状態にしてエミッタとコレ
クタの両方よりベースにキャリアを注入し、再結合を生
じさせる。再結合により生じた先立は、ベース層の長辺
方向に共振し、レーザ光として外部にとり出される。一
方、発光を停止させるには、第７図（ロ）のようにトラ
ンジスタ動作における活性状態またはロットオフ状態に
して、ベースからコレクタへ電子を高速で吸い出してベ
ース層内でのキャリアの再結合を中止させる方法がとら
れている。This element is driven using, for example, the emitter-grounded circuit configuration shown in FIG. 602 represents a resistor, and 603 represents a laser beam. When emitting light, carriers are injected into the base from both the emitter and collector under the saturated state of transistor operation as shown in FIG. 9(a), causing recombination. The laser beam generated by recombination resonates in the long side direction of the base layer and is extracted to the outside as a laser beam. On the other hand, in order to stop light emission, as shown in Figure 7 (b), the transistor is placed in an active state or lot-off state, and electrons are sucked out from the base to the collector at high speed to stop recombination of carriers within the base layer. A method is being taken to
発明が解決しようとする問題点
このような状態の切りかえは、電気的には通常のスイッ
チングトランジスタのオンとオフに相当する。しかし、
スイッチングトランジスタには、オンからオフへの切り
かえのときに蓄積時間と呼ばれる動作遅れ時間が存在し
、レーザトランジスタや発光トランジスタでも同様の現
象が生じこれが高速動作化を妨げていた。Problems to be Solved by the Invention Electrically, this switching of states corresponds to turning on and off a normal switching transistor. but,
Switching transistors have an operation delay time called accumulation time when switching from on to off, and a similar phenomenon occurs in laser transistors and light-emitting transistors, which hinders high-speed operation.
本発明は蓄積時間が無く高速動作を期待できる半導体発
光素子を提供することを目的とする。An object of the present invention is to provide a semiconductor light emitting device that has no accumulation time and can be expected to operate at high speed.
問題点を解決するための手段
本発明の半導体発光素子は、第１の導電型の半導体薄膜
層と、上記半導体薄膜層をはさみ屈折率とバンドギャッ
プエネルギーが上記半導体薄膜層との界面近傍でそれぞ
れ最大値、前記半導体薄膜層のバンドギャップエネルギ
ーより少なくとも大きい最小値をとり前記界面からの距
離が増加するにつれ前記屈折率と前記バンドギャップエ
ネルギーが連続的にそれぞれ減少増加する分布定数半導
体領域を少なくとも一部分に持つ第１の導電型の第１と
第２の半導体層と、上記第１の半導体層の主面に接する
第２の導電型の第３の半導体層と、上記第２の半導体層
の主面に接する第２の導電型の第４の半導体層とを設け
たことを特徴とする。Means for Solving the Problems The semiconductor light emitting device of the present invention includes a semiconductor thin film layer of a first conductivity type, and the semiconductor thin film layer is sandwiched between the refractive index and the band gap energy, respectively, in the vicinity of the interface between the semiconductor thin film layer and the semiconductor thin film layer. at least a portion of a distributed constant semiconductor region in which the refractive index and the bandgap energy continuously decrease and increase, respectively, as the distance from the interface increases, with a maximum value and a minimum value at least greater than the bandgap energy of the semiconductor thin film layer; a third semiconductor layer of a second conductivity type in contact with the main surface of the first semiconductor layer, and a main surface of the second semiconductor layer; A fourth semiconductor layer of the second conductivity type is provided in contact with the surface.
作用
この構成により、ベース層のバンドギャップと屈折率を
連続的に変化させ、その中央部を量子井戸層と呼ばれる
半導体薄膜層で形成したため、キャリアと光のとじこめ
効果を増大させ、レーザトランジスタあるいは発光トラ
ンジスタを飽和状態にせ′ずとも、ベース内にレーザ発
振あるいは発光に十分な利得を提供できる量のキャリア
を存在させることを可能にするものである。また、飽和
させずに発振あるいは発光できるため、変調時に蓄積時
間がなくなり、動作の高速化がはかれる。Function: With this structure, the bandgap and refractive index of the base layer are continuously changed, and the central part is formed of a semiconductor thin film layer called a quantum well layer, which increases the carrier and light confinement effect, making it ideal for laser transistors or light emitting devices. This makes it possible to have a sufficient amount of carriers in the base to provide sufficient gain for laser oscillation or light emission without bringing the transistor into saturation. Furthermore, since oscillation or light emission is possible without saturation, there is no accumulation time during modulation, resulting in faster operation.
実施例
以下、本発明の一実施例を第１図〜第４図に基づいて説
明する。EXAMPLE Hereinafter, an example of the present invention will be described based on FIGS. 1 to 4.
第１図は本発明の半導体発光素子を示す。１０１はＰ型
ＩｎＧａＡｓＰ量子井戸層で、厚さ１００人、組成波長
１．３ミクロンである。１０２はＰ型Ｉ ｎ Ｇ ａ
Ａ ｓＰ分布屈折率層、１０３はｎ型ＩｎＰエミッタ層
、１０４はｎ型ＩｎＰコレクタ層である。量子井戸層１
０１と分布屈折率層１０２とでベース層が構成される。FIG. 1 shows a semiconductor light emitting device of the present invention. 101 is a P-type InGaAsP quantum well layer with a thickness of 100 μm and a composition wavelength of 1.3 μm. 102 is P type I n Ga
103 is an n-type InP emitter layer, and 104 is an n-type InP collector layer. quantum well layer 1
01 and the distributed refractive index layer 102 constitute a base layer.
１０５はｎ型ＩｎＰ基板、１０６はベース層に電流を供
給するＰ型ＩｎＰグラフトベース層、１０７．１０８゜
１０９はそれぞれエミッタ、ベース、コレクタ電極、Ａ
、Ｂはミラー面である。105 is an n-type InP substrate, 106 is a P-type InP graft base layer that supplies current to the base layer, 107.108° and 109 are emitter, base, and collector electrodes, respectively.
, B is a mirror surface.
第２図はエミッタ層１０３、ベース層１０６、コレクタ
層１０４のバンド状態を示すバンド図である。量子井戸
層１０１はその両側の分布屈折率層１０２と比べ、バン
ドギャップエネルギーが小さく、キャリアを捕獲しやす
くなっている６分布屈折率層１０２の厚みはトランジス
タとしての機能、特に少数キャリアのベース走行時間を
従来と同程度に保つため、約０．５ミクロンとしである
。２０５はフェルミ準位を示す。このときの屈折率分布
を第３図に示す。量子井戸層１０１の屈折率ｎ０が他の
層と比べて突出した形になっており、この中に効率のよ
い光のとじこめが成される。ｎ工は分布屈折率層の最大
屈折率、ｎ２は分布屈折率層の最小屈折率、ｎ、はエミ
ッタ層、コレクタ層の屈折率である０分布屈折率層１０
２の屈折率ｎ （ｘ）は、量子井戸層１０１の中央部を
Ｘ＝Ｏとしたとき、
となるような分布をしている。ここでｂはベース層幅の
半分の長さである。エミッタ層１０３、 コレクタ層１
０４はＩｎＰより成るため、その屈折率ｎ。FIG. 2 is a band diagram showing band states of the emitter layer 103, base layer 106, and collector layer 104. The quantum well layer 101 has a smaller bandgap energy than the distributed refractive index layers 102 on both sides, making it easier to capture carriers. In order to keep the time at the same level as before, it is set to about 0.5 micron. 205 indicates the Fermi level. The refractive index distribution at this time is shown in FIG. The refractive index n0 of the quantum well layer 101 is prominent compared to other layers, and light is efficiently confined within the quantum well layer 101. 0 distribution refractive index layer 10 where n is the maximum refractive index of the distributed refractive index layer, n2 is the minimum refractive index of the distributed refractive index layer, and n is the refractive index of the emitter layer and collector layer.
The refractive index n (x) of 2 has a distribution such that when X=O at the center of the quantum well layer 101. Here, b is half the width of the base layer. Emitter layer 103, collector layer 1
Since 04 is made of InP, its refractive index is n.
はｎ２よりさらに小さい。is even smaller than n2.
第４図はこの素子を駆動したときのバンド図を示す、駆
動される状態は従来例と同様にトランジスタ動作におけ
る飽和領域および第４図（イ）、（ロ）に示すように活
性領域である。よって、ベース層中の少数キャリア（電
子）分布は、工゛ミッタ・コレクタ間の印加電圧Ｖ（ｊ
Ｅによって可変である。また、ベース・コレクタ間に負
荷される電圧を大きくすることにより、２者の界面に空
乏層が広がり、分布屈折率層１０２のバンド端がコレク
タ層の近傍で下がり、ベース層内の電子を吸い出すこと
ができる１以上２つの点より、量子井戸層１０１に捕獲
される電子の量はＶＯＨにより制御できる。ＶＣＦが小
さいときを図（イ）に、大きいときを図（ロ）に示す。Figure 4 shows a band diagram when this element is driven. The driven states are the saturated region in transistor operation and the active region as shown in Figures 4 (a) and (b), as in the conventional example. . Therefore, the minority carrier (electron) distribution in the base layer is determined by the applied voltage V(j
It is variable depending on E. In addition, by increasing the voltage applied between the base and collector, a depletion layer spreads at the interface between the two, the band edge of the distributed refractive index layer 102 drops near the collector layer, and electrons in the base layer are sucked out. The amount of electrons captured in the quantum well layer 101 can be controlled by VOH from one or more points that can be achieved. Figure (A) shows when VCF is small, and Figure (B) shows when it is large.
量子井戸層に捕獲された電子は、多数キャリアである正
孔と再結合をし、光ｈｙを発する。ここで第４図（イ）
（ロ）に示したようにＶａｔが小さいときの方が大きい
ときよりも多くの光ｈνを発する。この光は、分布屈折
率層、エミッタ層、コレクタ層によりとじこめられ、第
１図中のミラー面Ａ−Ｂの間を往復し、十分な利得を持
てばレーザ発振を起こす。前述のように量子井戸層中の
電子の量は、ＶｃＢにより可変であるから、発光量もま
たＶａｉにより制御できる。The electrons captured in the quantum well layer recombine with holes, which are majority carriers, and emit light hy. Here, Figure 4 (a)
As shown in (b), more light hv is emitted when Vat is small than when it is large. This light is confined by the distributed refractive index layer, the emitter layer, and the collector layer, travels back and forth between the mirror surfaces A and B in FIG. 1, and, if it has sufficient gain, causes laser oscillation. As mentioned above, since the amount of electrons in the quantum well layer is variable by VcB, the amount of light emission can also be controlled by Vai.
以上のようにベース電流の調節によって発光強度が変化
するが、これと同時に、活性状態での電流増幅率ｈｐＥ
に対応した電流増幅も行なえる。また、飽和しないので
、速いスイッチング動作が可能になる。As described above, the emission intensity changes by adjusting the base current, but at the same time, the current amplification rate hpE in the active state
It is also possible to perform current amplification corresponding to Furthermore, since saturation does not occur, fast switching operations are possible.
発明の効果
本発明の半導体発光素子は、第１の導電型の半導体簿膜
層と、上記半導体薄膜層をはさみ、屈折率とバンドギャ
ップエネルギーが上記半導体薄膜層との界面近傍でそれ
ぞれ最大値または最小値をとり、前記界面からの距離が
増加するにつれ、前記屈折率と前記バンドギャップエネ
ルギーが連続的にそれぞれ減少又は増加する分布定数半
導体領域を少なくとも一部分に持つ第１の導電型の第１
と第２の半導体層と、上記第１の半導体層の主面に接す
る第２の導電型の第３の半導体層と、上記第２の半導体
層の主面に接する第２の導電型の第４の半導体層とを設
けたため、飽和状態にせずどもレーザ発振するレーザト
ランジスタ、あるいは発光する発光トランジスタが構成
でき、高速動作に極めて有用である。また量子井戸層と
分布屈折率層とを持つ構造にしたことにより、レーザ発
振のしきい値電流の低減がはかれ、低消費電力化が図れ
るものである。Effects of the Invention The semiconductor light emitting device of the present invention includes a semiconductor thin film layer of a first conductivity type and the semiconductor thin film layer, and has a refractive index and a band gap energy of a maximum value or a maximum value near the interface with the semiconductor thin film layer. A first semiconductor of a first conductivity type having at least a portion thereof a distributed constant semiconductor region in which the refractive index and the band gap energy continuously decrease or increase, respectively, as the distance from the interface increases.
and a second semiconductor layer, a third semiconductor layer of a second conductivity type in contact with the main surface of the first semiconductor layer, and a third semiconductor layer of a second conductivity type in contact with the main surface of the second semiconductor layer. Since the semiconductor layer No. 4 is provided, a laser transistor that oscillates or a light emitting transistor that emits light without reaching a saturated state can be constructed, which is extremely useful for high-speed operation. Further, by adopting a structure having a quantum well layer and a distributed refractive index layer, the threshold current for laser oscillation can be reduced, and power consumption can be reduced.
第１図は本発明の半導体発光素子の一実施例の構造図、
第２図は第１図に示した実施例のバンド図、第３図は第
１図に示した実施例の屈折率分布図、第４図は第１図に
示した実施例の動作状態を示すバンド図とキャリアの流
れ図、第５図は従来のレーザトランジスタの構造図、第
６図はレーザトランジスタの駆動回路図、第７図は従来
のレーザトランジスタの動作時のバンド図とキャリアの
流れ図である。
１０１・Ｐ型ＩｎＧａＡｓＰ量子井戸層、１０２−Ｐ型
Ｉ ｎ Ｇ ａ Ａ ｓ Ｐ分布屈折率層、１０３−
ｎ型ＩｎＰエミッタ層、１０４・・・ｎ型ＩｎＰコレク
タ層代理人 森 本 義 弘
屈前ｆｎ
第４図FIG. 1 is a structural diagram of an embodiment of the semiconductor light emitting device of the present invention;
Fig. 2 is a band diagram of the embodiment shown in Fig. 1, Fig. 3 is a refractive index distribution diagram of the embodiment shown in Fig. 1, and Fig. 4 shows the operating state of the embodiment shown in Fig. 1. Figure 5 is a structural diagram of a conventional laser transistor, Figure 6 is a drive circuit diagram of a laser transistor, and Figure 7 is a band diagram and carrier flow diagram of a conventional laser transistor during operation. be. 101-P-type InGaAsP quantum well layer, 102-P-type InGaAsP distributed refractive index layer, 103-
N-type InP emitter layer, 104...n-type InP collector layer agent Yoshihiro Morimoto fn Figure 4
Claims (1)
をはさみ屈折率とバンドギャップエネルギーが上記半導
体薄膜層との界面近傍でそれぞれ最大値、前記半導体薄
膜層のバンドギャップエネルギーより少なくとも大きい
最小値をとり前記界面からの距離が増加するにつれ前記
屈折率と前記バンドギャップエネルギーが連続的にそれ
ぞれ減少、増加する分布定数半導体領域を少なくとも一
部分に持つ第１の導電型の第１と第２の半導体層と、上
記第１の半導体層の主面に接する第２の導電型の第３の
半導体層と、上記第２の半導体層の主面に接する第２の
導電型の第４の半導体層とを設けた半導体発光素子。 ２、第１と第２の半導体層のバンドギャップエネルギー
が半導体薄膜層のバンドギャップエネルギーより大きい
ことを特徴とする特許請求の範囲第１項記載の半導体発
光素子。 ３、第１と第２の半導体層中の分布定数半導体領域の屈
折率の２乗が半導体薄膜層からの距離ｘに対し、１−ｋ
ｘ＾Ｐ（０＜ｋ、ｐ）に比例して減少することを特徴と
する特許請求の範囲第１項記載の半導体発光素子。 ４、第１と第２の半導体層の屈折率が半導体薄膜層の屈
折率より小さいことを特徴とする特許請求の範囲第１項
記載の半導体発光素子。 ５、第３と第４の半導体層の屈折率が、第１と第２の半
導体層より小さいことを特徴とする特許請求の範囲第１
項記載の半導体発光素子。 ６、半導体薄膜層と第１と第２の半導体がベース層、第
３の半導体層がエミッタ層、第４の半導体層がコレクタ
層であることを特徴とする特許請求の範囲第１項記載の
半導体発光素子。 ７、エミッタ層のバンドギャップエネルギーが、ベース
層のバンドギャップエネルギーより大きいことを特徴と
する特許請求の範囲第６項記載の半導体発光素子。 ８、コレクタ層のバンドギャップエネルギーが、ベース
層のバンドギャップエネルギーより大きいことを特徴と
する特許請求の範囲第７項記載の半導体発光素子。 ９、半導体薄膜領域で生じた光のための光学的共振器を
具備することを特徴とする特許請求の範囲第１項記載の
半導体発光素子。[Claims] 1. A semiconductor thin film layer of a first conductivity type, and a refractive index and a bandgap energy of the semiconductor thin film layer sandwiching the semiconductor thin film layer have their respective maximum values near the interface with the semiconductor thin film layer; A first conductivity type having, at least in part, a distributed constant semiconductor region in which the refractive index and the bandgap energy continuously decrease and increase, respectively, as the distance from the interface increases and the minimum value is at least larger than the bandgap energy. a third semiconductor layer of a second conductivity type that is in contact with the main surface of the first semiconductor layer, and a second conductive layer that is in contact with the main surface of the second semiconductor layer. A semiconductor light emitting device comprising a molded fourth semiconductor layer. 2. The semiconductor light emitting device according to claim 1, wherein the band gap energy of the first and second semiconductor layers is larger than the band gap energy of the semiconductor thin film layer. 3. Distribution constant in the first and second semiconductor layers The square of the refractive index of the semiconductor region is 1-k with respect to the distance x from the semiconductor thin film layer.
2. The semiconductor light emitting device according to claim 1, wherein the semiconductor light emitting device decreases in proportion to x^P (0<k, p). 4. The semiconductor light emitting device according to claim 1, wherein the refractive index of the first and second semiconductor layers is smaller than the refractive index of the semiconductor thin film layer. 5. Claim 1, characterized in that the refractive index of the third and fourth semiconductor layers is smaller than that of the first and second semiconductor layers.
The semiconductor light-emitting device described in 2. 6. The semiconductor thin film layer and the first and second semiconductors are base layers, the third semiconductor layer is an emitter layer, and the fourth semiconductor layer is a collector layer, according to claim 1. Semiconductor light emitting device. 7. The semiconductor light emitting device according to claim 6, wherein the bandgap energy of the emitter layer is larger than the bandgap energy of the base layer. 8. The semiconductor light emitting device according to claim 7, wherein the collector layer has a band gap energy larger than that of the base layer. 9. The semiconductor light emitting device according to claim 1, characterized in that it comprises an optical resonator for light generated in the semiconductor thin film region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60112589A JPS61270885A (en) | 1985-05-24 | 1985-05-24 | Semiconductor light emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60112589A JPS61270885A (en) | 1985-05-24 | 1985-05-24 | Semiconductor light emitting element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61270885A true JPS61270885A (en) | 1986-12-01 |
Family
ID=14590520
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60112589A Pending JPS61270885A (en) | 1985-05-24 | 1985-05-24 | Semiconductor light emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61270885A (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63197383A (en) * | 1987-02-10 | 1988-08-16 | Nec Corp | Pnpn semiconductor element |
| US6707074B2 (en) | 2000-07-04 | 2004-03-16 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light-emitting device and apparatus for driving the same |
| US7244997B2 (en) | 2003-07-08 | 2007-07-17 | President And Fellows Of Harvard College | Magneto-luminescent transducer |
| JP2012524398A (en) * | 2009-04-17 | 2012-10-11 | ザ ボード オブ トラスティース オブ ザ ユニバーシティ オブ イリノイ | Light emitting semiconductor method and device |
| US8494375B2 (en) | 2009-11-09 | 2013-07-23 | Quantum Electro Opto Systems Sdn. Bhd. | High speed communication |
| US8509274B2 (en) | 2009-01-08 | 2013-08-13 | Quantum Electro Opto Systems Sdn. Bhd. | Light emitting and lasing semiconductor methods and devices |
| US8618575B2 (en) | 2010-09-21 | 2013-12-31 | Quantum Electro Opto Systems Sdn. Bhd. | Light emitting and lasing semiconductor methods and devices |
| US8638830B2 (en) * | 2009-01-08 | 2014-01-28 | Quantum Electro Opto Systems Sdn. Bhd. | Light emitting and lasing semiconductor devices and methods |
| US8842706B2 (en) | 2011-10-07 | 2014-09-23 | The Board Of Trustees Of The University Of Illinois | Opto-electronic oscillator and method |
| US8970126B2 (en) | 2011-10-07 | 2015-03-03 | The Board Of Trustees Of The University Of Illinois | Opto-electronic devices and methods |
| US9159873B2 (en) | 2011-11-14 | 2015-10-13 | Quantum Electro Opto Systems Sdn. Bhd. | High speed optical tilted charge devices and methods |
| US9452928B2 (en) | 2011-09-02 | 2016-09-27 | Quantum Electro Opto Systems Sden. Bhd. | Opto-electronic circuits and techniques |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59104189A (en) * | 1982-12-07 | 1984-06-15 | Kokusai Denshin Denwa Co Ltd <Kdd> | Semiconductor laser |
-
1985
- 1985-05-24 JP JP60112589A patent/JPS61270885A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59104189A (en) * | 1982-12-07 | 1984-06-15 | Kokusai Denshin Denwa Co Ltd <Kdd> | Semiconductor laser |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63197383A (en) * | 1987-02-10 | 1988-08-16 | Nec Corp | Pnpn semiconductor element |
| US6707074B2 (en) | 2000-07-04 | 2004-03-16 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light-emitting device and apparatus for driving the same |
| US7244997B2 (en) | 2003-07-08 | 2007-07-17 | President And Fellows Of Harvard College | Magneto-luminescent transducer |
| CN103701031A (en) * | 2009-01-08 | 2014-04-02 | 伊利诺斯大学理事会 | Light emitting and lasing semiconductor devices and methods |
| US8509274B2 (en) | 2009-01-08 | 2013-08-13 | Quantum Electro Opto Systems Sdn. Bhd. | Light emitting and lasing semiconductor methods and devices |
| AU2010203817B2 (en) * | 2009-01-08 | 2014-09-25 | Quantum Electro Opto Systems Sdn. Bhd. | Light emitting and lasing semiconductor devices and methods |
| US8638830B2 (en) * | 2009-01-08 | 2014-01-28 | Quantum Electro Opto Systems Sdn. Bhd. | Light emitting and lasing semiconductor devices and methods |
| US8675703B2 (en) | 2009-01-08 | 2014-03-18 | Quantum Electro Opto Systems Sdn. Rhd. | Two terminal light emitting and lasing devices and methods |
| JP2012524398A (en) * | 2009-04-17 | 2012-10-11 | ザ ボード オブ トラスティース オブ ザ ユニバーシティ オブ イリノイ | Light emitting semiconductor method and device |
| US8494375B2 (en) | 2009-11-09 | 2013-07-23 | Quantum Electro Opto Systems Sdn. Bhd. | High speed communication |
| US9231700B2 (en) | 2009-11-09 | 2016-01-05 | Quamtum Electro Opto Systems Sdn. Bhd. | High speed communication |
| US8618575B2 (en) | 2010-09-21 | 2013-12-31 | Quantum Electro Opto Systems Sdn. Bhd. | Light emitting and lasing semiconductor methods and devices |
| US9299876B2 (en) | 2010-09-21 | 2016-03-29 | Quantum Electro Opto Systems Sdn. Bhd. | Light emitting and lasing semiconductor methods and devices |
| US9452928B2 (en) | 2011-09-02 | 2016-09-27 | Quantum Electro Opto Systems Sden. Bhd. | Opto-electronic circuits and techniques |
| US8842706B2 (en) | 2011-10-07 | 2014-09-23 | The Board Of Trustees Of The University Of Illinois | Opto-electronic oscillator and method |
| US8970126B2 (en) | 2011-10-07 | 2015-03-03 | The Board Of Trustees Of The University Of Illinois | Opto-electronic devices and methods |
| US9159873B2 (en) | 2011-11-14 | 2015-10-13 | Quantum Electro Opto Systems Sdn. Bhd. | High speed optical tilted charge devices and methods |
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