JPS6126589A - Raw material feeder for single crystal pulling machine - Google Patents
Raw material feeder for single crystal pulling machineInfo
- Publication number
- JPS6126589A JPS6126589A JP14479084A JP14479084A JPS6126589A JP S6126589 A JPS6126589 A JP S6126589A JP 14479084 A JP14479084 A JP 14479084A JP 14479084 A JP14479084 A JP 14479084A JP S6126589 A JPS6126589 A JP S6126589A
- Authority
- JP
- Japan
- Prior art keywords
- raw material
- single crystal
- main body
- crystal pulling
- pulling machine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は、シリコンなどの単結晶金融液から引き上げる
機械のルツ、ボ内ヘランプ（塊）状の半導体原料を供給
するための装置に関するものである。[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to an apparatus for supplying lump-like semiconductor raw material into a machine root or a bowl pulled from a single crystal financial liquid such as silicon. .
薄、
〔発明の技術的背景とその問題〕
△
単結晶引上機は、ルツボ内の融液を引き上げ終ると、引
上げられた単結晶を機外へ取出すと共に、次回の引上げ
のためにルツボ内へ原料を供給する。[Technical background of the invention and its problems] △ When the single crystal pulling machine finishes pulling the melt in the crucible, it takes out the pulled single crystal outside the machine and returns it to the crucible for the next pulling. supply raw materials to
この原料供給時にルツボを常温近くまで冷却すると、ル
ツボは一般に石英で作られているため、残留している半
導体原料と前記石英の熱膨張係数の差によりルツボが破
壊されてしまう。そこで、ルツボの温度を残留融液がわ
ずかに固化する程度ま ０での温度低下に止める
と共に、不活性ガス雰囲気を保ち、例えば、底を開閉可
能にした筒状の原料供給装置内にランプ状の原料を入れ
て、前記のルツボの上方に搬入し、底を開いて原料をル
ツボ内へ供給するようにした装置が提案されている。と
ころで、このような原料供給装置は、ルツボ内への供給
時に不純物を混入しないことが重要である。If the crucible is cooled to near room temperature when this raw material is supplied, since the crucible is generally made of quartz, the crucible will be destroyed due to the difference in thermal expansion coefficient between the remaining semiconductor raw material and the quartz. Therefore, the temperature of the crucible is kept at 0, to the extent that the residual melt solidifies slightly, and an inert gas atmosphere is maintained. An apparatus has been proposed in which a raw material is placed above the crucible, the bottom is opened, and the raw material is fed into the crucible. By the way, it is important that such a raw material supply device does not mix impurities during supply into the crucible.
このため、従来は、原料供給装置の原料に接触する部分
を石英ガラスや５１３Ｎ４などの比較的硬度が高く、耐
腐蝕性に富む材料で形成していたが、特に原料がランプ
状の場合には、多少の擦過は避けられず、不純物混入の
原因となったり、またＳｉ３Ｎ４は硬度が高いため石英
ガラスなどに比較すれば擦過は少ないが、高価であるな
どの欠点を有し′ていた。For this reason, conventionally, the parts of the raw material supply device that come into contact with the raw material were made of relatively hard and corrosion-resistant materials such as quartz glass and 513N4. However, since Si3N4 has high hardness, there is less abrasion compared to quartz glass, but it has drawbacks such as being expensive.
本発明の目的は、シリコンの単結晶引上げ用の原料供給
装置として適し、比較的安価に製作できて不純物混入の
問題のない原料供給装置を提供するにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a raw material supplying apparatus suitable for pulling a silicon single crystal, which can be manufactured at a relatively low cost, and is free from the problem of contamination with impurities.
かかる目的を達成するための本発明は、原料供給装置の
原料が接触する部分の内壁面を、多結晶シリコン、アモ
ルファスシリコン層−ｔ［覆Ｌｉものである。なお、前
記被覆ｇｃＶＤ法やＰＶＤ法で行えば、非常に高い硬度
の被覆層となるため、シリコンに限らず他の半導体原料
の供給用としても使用し得るものである。In order to achieve this object, the present invention covers the inner wall surface of the portion of the raw material supply device in contact with the raw material with a layer of polycrystalline silicon or amorphous silicon. Note that if the covering gcVD method or PVD method is used, the coating layer will have a very high hardness, so it can be used not only for silicon but also for supplying other semiconductor raw materials.
以下本発明の一実施例を示す図面について説明する。１
は単結晶引上機に設置されているルツボである。２は本
発明による原料供給装置で、筒状の本体３を有し、同本
体３の下端には軸４を中心にしてロッド５により開閉さ
れる２枚のフタロが設けられている。本体３の図示しな
い上端は吊り具などにより支持され、単結晶引上機のル
ツボ１上に対して搬出入されるようになっている。The drawings showing one embodiment of the present invention will be described below. 1
is a crucible installed in a single crystal pulling machine. Reference numeral 2 designates a raw material supply device according to the present invention, which has a cylindrical main body 3. At the lower end of the main body 3, two phthalos are provided which are opened and closed by a rod 5 with a shaft 4 as the center. The upper end (not shown) of the main body 3 is supported by a hanging device or the like, and is adapted to be carried in and out of the crucible 1 of the single crystal pulling machine.
前記本体３およびフタロの内壁面には、ＣＶＤ法やＰＶ
Ｄ法などにより形成された多結晶シリコンまたはアモル
ファスシリコンの被覆膜７が設置られている。なお、Ｃ
ＶＤ法により被覆膜７を形成する場合は、下地表面形状
が継承されるため、本体３やフタロの内壁面を研磨加工
しておけば、滑らかな表面の被覆膜７とすることができ
、内部に入れられた原料８との摩擦を小さくできる。ま
た、減圧ＣＶＤ法によれば、筒状の本体３の内壁面に対
しても均一性のよい被覆膜７が得られ、さらに、プラズ
マ放電を用いたＣＶＤ法によれば、２００〜３００℃の
低温状態にて被覆膜７を形成することが可能となシ、本
体３やフタロの材質すなわち被覆膜７に対する母材の材
質に熱膨張の大きなものも使用し得る。The inner wall surfaces of the main body 3 and Phthalo are coated with CVD or PV.
A coating film 7 of polycrystalline silicon or amorphous silicon formed by the D method or the like is provided. In addition, C
When forming the coating film 7 by the VD method, the underlying surface shape is inherited, so if the inner wall surface of the main body 3 and phthalo is polished, the coating film 7 can have a smooth surface. , friction with the raw material 8 placed inside can be reduced. Further, according to the low pressure CVD method, a coating film 7 with good uniformity can be obtained even on the inner wall surface of the cylindrical main body 3, and furthermore, according to the CVD method using plasma discharge, the coating film 7 can be heated to a temperature of 200 to 300°C. It is possible to form the coating film 7 in a low temperature state, and it is also possible to use a material with large thermal expansion as the material of the main body 3 and phthalo, that is, the material of the base material for the coating film 7.
ＣＶＤ法やＰＶＤ法で形成した多結晶シリコンおよびア
モルファスシリコンの被１膜７ば、”ビッカース硬度が
１５００〜２０００ Ｋｇ／ｃＪと高く、高純度、高融
点であり、組織も緻密で物体への接着性が良く、比較的
安価にできる。Polycrystalline silicon and amorphous silicon coatings 7 formed by CVD or PVD have a high Vickers hardness of 1500 to 2000 Kg/cJ, high purity and high melting point, and have a dense structure that allows them to adhere to objects. It has good properties and can be made relatively inexpensively.
また、本体３やフタらの母材の材質は、取扱いに際して
さびなどが混入しないようにステンレス０ 鋼
とするか、さらには多結晶シリコンおよびアモルファス
シリコンとの熱膨張の差を小さく押えるためにチタンな
いしはチタン化合物の蒸着膜をはさむか、さらには母材
そのものをチタンないしはチタン合金にすることが好ま
しい。In addition, the base material of the main body 3 and lid is either stainless steel to prevent rust from entering during handling, or titanium to minimize the difference in thermal expansion between polycrystalline silicon and amorphous silicon. Alternatively, it is preferable to sandwich a vapor-deposited film of a titanium compound or to use titanium or a titanium alloy as the base material itself.
本発明による原料供給装置２は、前述したよりｆｘ多結
晶ン＋）コンマタはアモルファスシリコンの被覆膜７を
設けたので、原料８金入れ、フタロを開いてルツボ１内
へ供給する際、原料８が本体３やフタロの内壁面を擦過
しても、該被覆膜７の硬度は非常に高いため、傷を生じ
たり、−！、た原料８が内壁面に食込んでブリッジを起
こして落下不良を生じたりすることもない。In the raw material supply device 2 according to the present invention, since the fx polycrystalline commata is provided with the coating film 7 of amorphous silicon as described above, when the raw material is loaded into the raw material, the phthalo is opened, and the raw material is supplied into the crucible 1. 8 scratches the main body 3 or the inner wall surface of the phthalo, the hardness of the coating film 7 is very high, so it may cause scratches or -! , the raw material 8 will not bite into the inner wall surface and cause bridging, resulting in poor falling.
壕り、原料８がシリコンの場合は、被覆膜７を原料８が
若干削り取るようなことがあっても、被覆膜７が高純度
のシリコンであるため、全く問題がない。When the raw material 8 is made of silicon, even if the raw material 8 slightly scrapes off the coating film 7, there is no problem at all because the coating film 7 is made of high-purity silicon.
以上述べたように本発明によれば、半導体原料がランプ
状のものであっても不純物を混入することなく単結晶引
上機のルツボへ供給することができ、装置も比較的安価
に製作できる。As described above, according to the present invention, even if the semiconductor raw material is lamp-shaped, it can be supplied to the crucible of the single crystal pulling machine without mixing impurities, and the device can be manufactured at a relatively low cost. .
図は本発明の一実施例を示す要部縦断面図である。
１・・・ ルツボ、 ２・・・ 原料供給装置、３・
・・ 本体、 ら・・・ ツク、 ７・・・ 被覆
膜、８・・・ 原料。The figure is a longitudinal sectional view of a main part showing an embodiment of the present invention. 1... Crucible, 2... Raw material supply device, 3.
...Main body, Ra...Tsuku, 7...Coating film, 8...Raw material.
Claims (1)
て、原料が接触する装置の内壁面を、多結晶シリコン、
アモルファスシリコン層で被覆したことを特徴とする単
結晶引上機の原料供給装置。 ２、内壁面の被覆をＰＶＤ法にて行なうことを特徴とす
る特許請求の範囲第１項記載の単結晶引上機の原料供給
装置。 ３、内壁面の被覆をＣＶＤ法にて行なうことを特徴とす
る特許請求の範囲第１項記載の単結晶引上機の原料供給
装置。 ４、被覆する部分の装置母材がステンレス鋼であること
を特徴とする特許請求の範囲第１、２または３項記載の
単結晶引上機の原料供給装置。 ５、被覆する部分の装置母材がチタンないしはその合金
であることを特徴とする特許請求の範囲第１、２または
３項記載の単結晶引上機の原料供給装置。[Claims] 1. In a raw material supply device for a crucible of a single crystal pulling machine, the inner wall surface of the device that comes into contact with the raw material is made of polycrystalline silicon, polycrystalline silicon,
A raw material supply device for a single crystal pulling machine characterized by being coated with an amorphous silicon layer. 2. A raw material supply device for a single crystal pulling machine according to claim 1, wherein the inner wall surface is coated by a PVD method. 3. A raw material supply device for a single crystal pulling machine according to claim 1, wherein the inner wall surface is coated by a CVD method. 4. The raw material supply device for a single crystal pulling machine according to claim 1, 2 or 3, wherein the device base material of the portion to be coated is stainless steel. 5. The raw material supply device for a single crystal pulling machine according to claim 1, 2 or 3, wherein the device base material of the portion to be coated is titanium or an alloy thereof.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14479084A JPS6126589A (en) | 1984-07-12 | 1984-07-12 | Raw material feeder for single crystal pulling machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14479084A JPS6126589A (en) | 1984-07-12 | 1984-07-12 | Raw material feeder for single crystal pulling machine |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6126589A true JPS6126589A (en) | 1986-02-05 |
Family
ID=15370507
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14479084A Pending JPS6126589A (en) | 1984-07-12 | 1984-07-12 | Raw material feeder for single crystal pulling machine |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6126589A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5132145A (en) * | 1987-04-27 | 1992-07-21 | Societe Anonyme | Method of making composite material crucible for use in a device for making single crystals |
| EP0756024A2 (en) * | 1995-07-25 | 1997-01-29 | MEMC Electronic Materials, Inc. | Method for preparing molten silicon melt from polycrystalline silicon charge |
| WO1999020815A1 (en) * | 1997-10-16 | 1999-04-29 | Memc Electronic Materials, Inc. | Process for preparing a silicon melt from a polysilicon charge |
-
1984
- 1984-07-12 JP JP14479084A patent/JPS6126589A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5132145A (en) * | 1987-04-27 | 1992-07-21 | Societe Anonyme | Method of making composite material crucible for use in a device for making single crystals |
| EP0756024A2 (en) * | 1995-07-25 | 1997-01-29 | MEMC Electronic Materials, Inc. | Method for preparing molten silicon melt from polycrystalline silicon charge |
| EP0756024A3 (en) * | 1995-07-25 | 1997-05-21 | Memc Electronic Materials | Method for preparing molten silicon melt from polycrystalline silicon charge |
| WO1999020815A1 (en) * | 1997-10-16 | 1999-04-29 | Memc Electronic Materials, Inc. | Process for preparing a silicon melt from a polysilicon charge |
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