JPS61253847A - 高信頼度を有する半導体装置 - Google Patents

高信頼度を有する半導体装置

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Publication number
JPS61253847A
JPS61253847A JP60094901A JP9490185A JPS61253847A JP S61253847 A JPS61253847 A JP S61253847A JP 60094901 A JP60094901 A JP 60094901A JP 9490185 A JP9490185 A JP 9490185A JP S61253847 A JPS61253847 A JP S61253847A
Authority
JP
Japan
Prior art keywords
electrode pad
electrode
probing
pads
electrode pads
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60094901A
Other languages
English (en)
Inventor
Yuji Komatsu
裕司 小松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP60094901A priority Critical patent/JPS61253847A/ja
Publication of JPS61253847A publication Critical patent/JPS61253847A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2884—Testing of integrated circuits [IC] using dedicated test connectors, test elements or test circuits on the IC under test
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H—ELECTRICITY
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
    • H01L2224/02165—Reinforcing structures
    • H01L2224/02166—Collar structures
    • H—ELECTRICITY
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/023—Redistribution layers [RDL] for bonding areas
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05556—Shape in side view
    • H01L2224/05557—Shape in side view comprising protrusions or indentations
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01—ELECTRIC ELEMENTS
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4807—Shape of bonding interfaces, e.g. interlocking features
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4845—Details of ball bonds
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
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    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体装置に関し、特に高湿匿雰囲気中にお
いて高信頼度を有する半導体装置に関する。
〔従来の技術〕
半導体装置は一般に１枚のウェハー上に個数のチップを
形成した後、ウェハープロービングによシそれぞれのチ
ップの電気的特性を測足し、良。
不良を判定した後チップを切シ離し、パッケージに組立
てワイヤーボンデングによシチップの電極パッドと、パ
ッケージリード線とを電気的に接続している。
従来ウェハープロービングはワイヤーポンティング用電
極を利用して行なっており、他に測定のみに用いパッケ
ージリードに接続しないチェック用電極パッド及びトリ
ミング用電極とを設ける場合がある。
〔発明が解決しようとする問題点〕
上述した従来の半導体装置は、ワイヤーボンディング用
電極パッド、チェック用電極パッド及びトリミング用電
極パッドにプローブを当てるため各電極パッドに針キズ
を生じさせる。第３図の従来の半導体装置の電極パッド
部の断面図を示し、これを参照して説明する。
上述の半導体装置をパッケージに組立てワイヤーボンデ
ィングを行なりと、ワイヤーボンディング用電極パッド
２の針キズを生じた部分はほとんどボンディング金属８
によって覆われるが、チェック用電極パッド及びトリミ
ング用電極パッド４゜５にはワイヤーボンディングをし
ないため、針キズを有する電極パッドが露出することに
なる。このように、半導体装置を高湿度雰囲気中で保管
すると、パッケージ材質を透過あるいはパラゲージリー
ド線とパッケージ材質とのすき間を通して浸入した水分
が針キズを有する電極を加水分解し導電性物質が生じ、
リーク電流を生じさせたり、断線を起すという欠点があ
る。
〔問題点を解決するための手段〕
本発明の高信頼度半導体装置は、ブロービング時のみに
用いられその後途去されるウェハープロービング用電極
パッドとブロービングを行なわないワイヤーボンディン
グ用電極パッドとをそれぞれ独立に有しておシ、検査後
はウェーハブロービング用電極パッドは除去されるもの
である。
〔実施例〕 次に、本発明について図面を参照して説明する。
第１図は本発明の一実施例の平面図である。チップ１に
は集積回路が形成されているが、図面では省略しており
、ワイヤーボンディング用電極パッド２、ブロービング
専用電極パッド３、トリミング用電極パッド４及びチェ
ック用電極パッド５が形成されている。ウェハーブロー
ビングは、ブロービング専用電極パッド３．トリミング
用電極パッド４及びチェック用電極パッドを用いて行な
う。第２図（ａ）は本実施例のブロービング時電極パッ
ド部の断面図である。各電極パッド２〜５はテップ１の
表面に絶縁被膜６を介して形成されており、ワイヤーボ
ンディング用電極パッド２は更に絶縁被膜７により覆わ
れている。ブロービングにより電極パッド３〜５には針
きずを生じている。
第２図（ｂ）は本実施例のワイヤーボンディング時電極
パッド部の断面図である。ブロービングを行なった電極
パッド３〜５は徐去されており、電極パッド２には、金
属ワイヤー８がボンディングされる。
次に、本実施例を実現する手段について述べる。
半導体集積回路チップ１の配線及び電極パッドはアルミ
ニウムが用いられておシ、絶縁被膜７はシリコン酸化膜
が用いられている。第２図（ａ）に示すウェハープロー
ビング後にウェハーをリン酸液中で処理することによシ
、ブロービングに用いた電極パッド３，４．５は全て従
去することができる。このとき配線及びボンディング用
電極パッド２はシリコン酸化膜７によって覆われている
ため除去されない。次に、通常の７オトレジストエ程に
より、ボンディング用電極パッド２上のシリコン酸化膜
７を徐去して本構造を実現できる。なお、　１一般に７
オトレジストエ程を行なうにはウェハー表面が平担でお
る必要があり、特にブロービングによる針キズがあると
、フォトレジスト工程を行ない難い。本構造によれば、
針キズ部はフォトレジスト工程前にすべて徐去されてい
るため、このような困難を生じない。
〔発明の効果〕
以上説明したように本発明は、ウェハーブロービング用
電極パッドとワイヤーボンディング用電極パッドとをそ
れぞれ独立に設け、ブロービング後にウェハープロービ
ング用電極パッドを除去することにより、半導体装置が
完成した時点で針キズを有する電極が存在せず、水分の
浸入により電極が加水分解されない。また、ワイヤーボ
ンディング用電極パッドは金属ワイヤーにより大部分が
覆われるため、やけ多加水分解されに＜＜、高湿度雰囲
気中でもリーク電流や断線を生じない効果がある。
【図面の簡単な説明】
第１図は本発明の一実施例の半導体集積回路の平面図、
第２図（ａ）は本発明の一実施例によるウェハープロー
ビング後の電極パッド部の断面図、第２図（ｂ）は本発
明の一実施例によるワイヤーボンディング後の電極パッ
ド部の断面図でおる。第３図は従来の半導体集積回路の
電極パッド部の断面図である。 １・・・・・・半導体集積回路チェツブ、２・・・・・
・ワイヤーボンディング用電極パッド、３・・・・・・
ブロービング専用電極パッド、４・・・・・・トリミン
グ用電極パッド、５・・・・・・チェック用電極パッド
、６・・・・・・絶縁被膜、７・・・・・・電極上の絶
縁被膜、８・・・・・・ポンディングワイヤー。 第１図

Claims (1)

    【特許請求の範囲】
  1. 半導体基板上に形成され、少なくとも電気的特性の良否
    を判定した後に所定の容器に搭載し、ワイヤーボンディ
    ングにより電極をとり出している半導体装置において、
    前記半導体基板上には前記ワイヤーボンディング用の電
    極パッドと電気的特性判定用の電極パッドとを有し、前
    記電気的特性判定用電極パッドは前記電気的特性の良否
    を判定した後除去されていることを特徴とする高信頼度
    を有する半導体装置。
JP60094901A 1985-05-02 1985-05-02 高信頼度を有する半導体装置 Pending JPS61253847A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60094901A JPS61253847A (ja) 1985-05-02 1985-05-02 高信頼度を有する半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60094901A JPS61253847A (ja) 1985-05-02 1985-05-02 高信頼度を有する半導体装置

Publications (1)

Publication Number Publication Date
JPS61253847A true JPS61253847A (ja) 1986-11-11

Family

ID=14122927

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60094901A Pending JPS61253847A (ja) 1985-05-02 1985-05-02 高信頼度を有する半導体装置

Country Status (1)

Country Link
JP (1) JPS61253847A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0454134A2 (en) * 1990-04-25 1991-10-30 Kabushiki Kaisha Toshiba Semiconductor device
US5891745A (en) * 1994-10-28 1999-04-06 Honeywell Inc. Test and tear-away bond pad design
EP1517364A1 (en) * 2002-06-21 2005-03-23 Fujitsu Limited Semiconductor device and its producing method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0454134A2 (en) * 1990-04-25 1991-10-30 Kabushiki Kaisha Toshiba Semiconductor device
US5386127A (en) * 1990-04-25 1995-01-31 Kabushiki Kaisha Toshiba Semiconductor device having groups of pads which receive the same signal
US5891745A (en) * 1994-10-28 1999-04-06 Honeywell Inc. Test and tear-away bond pad design
EP1517364A1 (en) * 2002-06-21 2005-03-23 Fujitsu Limited Semiconductor device and its producing method
EP1517364A4 (en) * 2002-06-21 2006-06-07 Fujitsu Ltd SEMICONDUCTOR COMPONENT AND METHOD FOR THE PRODUCTION THEREOF
US7095045B2 (en) 2002-06-21 2006-08-22 Fujitsu Limited Semiconductor device and manufacturing method thereof

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