JPS61233365A - Substrate for capillary column - Google Patents

Substrate for capillary column

Info

Publication number
JPS61233365A
JPS61233365A JP59265093A JP26509384A JPS61233365A JP S61233365 A JPS61233365 A JP S61233365A JP 59265093 A JP59265093 A JP 59265093A JP 26509384 A JP26509384 A JP 26509384A JP S61233365 A JPS61233365 A JP S61233365A
Authority
JP
Japan
Prior art keywords
film
silicon
groove
capillary column
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59265093A
Other languages
Japanese (ja)
Inventor
Shiyousuke Hagiwara
萩原　▲金ヘンに小▼介
Kanji Inoue
寛治 井上
Makoto Katsumata
信 勝間田
Yasuo Takayama
康夫 高山
Eiichi Yano
矢野　栄一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sord Computer Corp
Original Assignee
Sord Computer Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sord Computer Corp filed Critical Sord Computer Corp
Priority to JP59265093A priority Critical patent/JPS61233365A/en
Publication of JPS61233365A publication Critical patent/JPS61233365A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N30/00—Investigating or analysing materials by separation into components using adsorption, absorption or similar phenomena or using ion-exchange, e.g. chromatography or field flow fractionation
    • G01N30/02—Column chromatography
    • G01N30/60—Construction of the column
    • G01N30/6095—Micromachined or nanomachined, e.g. micro- or nanosize

Abstract

PURPOSE:To reduce man-hour and to improve yield by forming a silicon film one surface of a plate material on which silicon can be deposited by evaporation and piercing a groove thereto. CONSTITUTION:The silicon film 2 is formed to about 21mum thickness on a glass plate 1 by a D bipolar sputtering device and a resist film 4 is formed on the film 2 deposited by evaporation on the glass plate. The groove having approximately the same width as the width of the groove formed on the film 2 is then formed on the resist film 4 by UV exposing and developing. The film 2 is then subjected to an etching treatment to be formed with the groove 3 to about 200mum width except the base film 2a of about 1mum silicon groove on the base. The resist film 4 is removed and the substrate A for a capillary column is formed. The man-hour of process is thus reduced and the yields is increased.

Description

【発明の詳細な説明】 （産業上の利用分野） 本発明は、ガス・クロマトグラフ用のキャピラリィ・カ
ラムにおけるキャピラリイ・カラム用基板に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a capillary column substrate in a capillary column for gas chromatography.

（従来技術とその問題点） シリコン・ウェハーに半導体プロセスのエツチング技術
を用いて溝を形成し、その上にガラス板をＶ着させる従
来におけるシリコン・ウェハーキャピラリイ・カラムは
、キャピラリイ・カラム用基砺　ｘｓ　　＋／　　＋　
　１−４　　〒ＩＩｌ＋　　ＪＬ７　　々ｔ　　ｓｈ　
　ｒｎ　　ｎ　　、ｒｚ　　而１、　シ１．　　二　曲
　■■ 点があった。(Prior art and its problems) The conventional silicon wafer capillary column, in which a groove is formed in a silicon wafer using semiconductor process etching technology, and a glass plate is V-bonded on top of the groove, is not suitable for capillary columns. Moto xs +/ +
1-4 〒IIl+ JL7 t sh
rn n, rz t1, si1. There were two songs ■■ points.

（発明の目的） 本発明は、このような問題点を解消するものであり、プ
ロセス工数を減らして歩留り率の高いキャピラリイ・カ
ラム用基板を提供することを目的とする。(Object of the Invention) The present invention solves these problems, and aims to provide a capillary column substrate that reduces the number of process steps and has a high yield rate.

（発明の概要） 本発明は、少なくともシリコンが蒸着法により蒸着でき
る板材の一面にシリコン膜を形成し、溝を穿設して成る
キャピラリィ・カラム用基板であり、この基板にガラス
板を密着させて流体通路用のキャピラリイ・カラムとし
て使用できるキャピラリィ・カラム用基板である。(Summary of the Invention) The present invention is a capillary column substrate in which a silicon film is formed on one surface of a plate material on which at least silicon can be deposited by vapor deposition method, and a groove is bored therein, and a glass plate is tightly attached to this substrate. This is a capillary column substrate that can be used as a capillary column for fluid passages.

（発明の実施例） 本発明の実施例を図面に基づいて説明する。(Example of the invention) Embodiments of the present invention will be described based on the drawings.

第１図（１）から（６）は、本発明のプロセス工数を示
す図であり、ガラス板１（以下、本発明においては、少
なくともシリコンが蒸着法、例えば真空蒸着法またはス
バタリング蒸着法により蒸着できる板材であれば材質に
は限定されないが説明の便室上−実施例としてガラス板
を用いて説明する。）にシリコン膜２を形成し、エツチ
ング処理でシリコン膜２に溝３を形成する状態を示す図
である。FIGS. 1 (1) to (6) are diagrams showing the number of process steps of the present invention. The material is not limited as long as it is a plate material that can be used, but the silicon film 2 is formed on the toilet (explained using a glass plate as an example), and the grooves 3 are formed in the silicon film 2 by etching. FIG.

ガラス板１に、シリコン膜２を直流二極スバタリング装
置による標準的な動作条件（例えばガス圧約１０　’Ｔ
ｏｒｒ、電圧約１ｋｖ）で厚さ約２１１１ｍに形成され
る（ｖｉｉ図（１）参照）、直流二極スパタリング装置
は既に公知であるため説明を詳略する。A silicon film 2 is deposited on a glass plate 1 under standard operating conditions (e.g. gas pressure of about 10'T) using a DC bipolar sputtering device.
The DC bipolar sputtering device, which is formed to a thickness of about 2111 m at a voltage of about 1 kV (see Fig. VII (1)), is already well known, so a detailed description thereof will be omitted.

シリコン膜２が蒸着されたその上にレジスト膜４を形成
する（第１図（３）参照）。A resist film 4 is formed on the silicon film 2 deposited thereon (see FIG. 1(3)).

紫外線露光及び現像によりシリコンＷＸ２に、形成する
とほぼ同じ幅の溝３をレジスト膜４に形成する（第１図
（４）参照）。Grooves 3 having approximately the same width as those formed in the silicon WX2 are formed in the resist film 4 by exposure to ultraviolet rays and development (see FIG. 1 (4)).

シリコン膜２に、ＨＦ、ＨＮＯ，、ＣＨ，Ｃ０ＯＨの混
合溶液でエツチング処理して底面にほぼ１μ糟のシリコ
ン溝底面１ｌ１２　ａを残して幅２００μ論のＷ２Ｂを
形成し、レジスト膜４を除去してキャピラリィ・カラム
用基板Ａが形成される（ｔｊｆＪ１図（５）（６）参照
）。The silicon film 2 is etched with a mixed solution of HF, HNO, CH, and COOH to form a W2B with a width of 200 μm, leaving a silicon groove bottom surface 1l12a with a thickness of approximately 1 μm on the bottom surface, and the resist film 4 is removed. Thus, a capillary column substrate A is formed (see tjfJ1 diagrams (5) and (6)).

尚、本実施例では、ガラス板１の平面−面にのみシリコ
ン膜２を蒸着してキャピラリイ・カラムを形成をする手
順を示したが、第２図に示すように、ガラス板１の他面
に対しても同手順でシリコン［２を蒸着しキャピラリイ
・カラムを形成し、両面にキャピラリイ・カラムを有す
るキャピラリイ・カラム用基板とすることも可能である
。In this embodiment, the procedure for forming a capillary column by depositing the silicon film 2 only on the plane-to-plane surface of the glass plate 1 was shown, but as shown in FIG. It is also possible to form a capillary column by vapor-depositing silicon [2] on the surface using the same procedure to obtain a capillary column substrate having capillary columns on both sides.

（発明の効果） 本発゛明は、以上の構成であるから、従来におけるシリ
コン・ウェハーにエツチング処理により溝を形成するよ
りもプロセス工数が少ないため、歩留り率の高いキャピ
ラリイ・カラム用基板である。(Effects of the Invention) Since the present invention has the above-described structure, the number of process steps is lower than that of forming grooves in a silicon wafer by etching in the conventional method, and therefore it can be used as a capillary column substrate with a high yield rate. be.

さらに、ガラス板にシリコン膜を蒸着してキャピラリイ
・カラムを形成するため、両面キャピラリイ・カラムか
ら成るキャピラリィ・カラム用基板を形成することがで
きる。Furthermore, since the capillary column is formed by depositing a silicon film on a glass plate, it is possible to form a capillary column substrate consisting of a double-sided capillary column.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は、本発明の工程及び構造を示す一部拡大断面図
である。 １・・・ガラス板　　２・・・シリコン膜２ａ・・・シ
リコン溝底面膜　　３・・・溝４・・・レノスト膜FIG. 1 is a partially enlarged sectional view showing the process and structure of the present invention. 1...Glass plate 2...Silicon film 2a...Silicon groove bottom film 3...Groove 4...Renost film

Claims (1)

【特許請求の範囲】[Claims] シリコンが蒸着法により蒸着可能な板材と、該板材の面
に形成されたシリコン膜と、該シリコン膜に穿設した溝
とより成るキャピラリィ・カラム用基板。A capillary column substrate comprising a plate material onto which silicon can be deposited by vapor deposition, a silicon film formed on the surface of the plate material, and a groove bored in the silicon film.
JP59265093A 1984-12-15 1984-12-15 Substrate for capillary column Pending JPS61233365A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59265093A JPS61233365A (en) 1984-12-15 1984-12-15 Substrate for capillary column

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59265093A JPS61233365A (en) 1984-12-15 1984-12-15 Substrate for capillary column

Publications (1)

Publication Number Publication Date
JPS61233365A true JPS61233365A (en) 1986-10-17

Family

ID=17412501

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59265093A Pending JPS61233365A (en) 1984-12-15 1984-12-15 Substrate for capillary column

Country Status (1)

Country Link
JP (1) JPS61233365A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4935040A (en) * 1989-03-29 1990-06-19 The Perkin-Elmer Corporation Miniature devices useful for gas chromatography
US5087275A (en) * 1987-09-22 1992-02-11 Thomson-Csf Electrochemical sensor having microcavities
WO1997028490A1 (en) * 1996-02-02 1997-08-07 University Of Washington Covered microchannels and the microfabrication thereof
US5720798A (en) * 1996-04-30 1998-02-24 Hewlett-Packard Company Micromachined analyte trap for gas phase streams
KR100460769B1 (en) * 2001-11-19 2004-12-08 홍석인 The fabrication method of micro-fluidics channel using screenprinting process for bio-microsystem
US7147695B2 (en) * 2002-12-13 2006-12-12 New Jersey Institute Of Technology Microfabricated microconcentrator for sensors and gas chromatography

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5087275A (en) * 1987-09-22 1992-02-11 Thomson-Csf Electrochemical sensor having microcavities
US4935040A (en) * 1989-03-29 1990-06-19 The Perkin-Elmer Corporation Miniature devices useful for gas chromatography
WO1997028490A1 (en) * 1996-02-02 1997-08-07 University Of Washington Covered microchannels and the microfabrication thereof
US5720798A (en) * 1996-04-30 1998-02-24 Hewlett-Packard Company Micromachined analyte trap for gas phase streams
KR100460769B1 (en) * 2001-11-19 2004-12-08 홍석인 The fabrication method of micro-fluidics channel using screenprinting process for bio-microsystem
US7147695B2 (en) * 2002-12-13 2006-12-12 New Jersey Institute Of Technology Microfabricated microconcentrator for sensors and gas chromatography

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