JPS61223524A - Load converter - Google Patents
Load converterInfo
- Publication number
- JPS61223524A JPS61223524A JP6549885A JP6549885A JPS61223524A JP S61223524 A JPS61223524 A JP S61223524A JP 6549885 A JP6549885 A JP 6549885A JP 6549885 A JP6549885 A JP 6549885A JP S61223524 A JPS61223524 A JP S61223524A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- load
- strain
- substance
- load transducer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/2206—Special supports with preselected places to mount the resistance strain gauges; Mounting of supports
- G01L1/2243—Special supports with preselected places to mount the resistance strain gauges; Mounting of supports the supports being parallelogram-shaped
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measurement Of Force In General (AREA)
- Pressure Sensors (AREA)
Abstract
Description
【発明の詳細な説明】
【産業上の利用分野〕
この発明は基材上に形成した薄膜をひずみゲージとして
用い、該基材に負荷された力、荷重等に応じて基材に生
じるひずみを上記薄膜の電気抵抗変化の形で検出するこ
とによって力、荷重等を検出するようにした荷重変換器
に関するものである。Detailed Description of the Invention [Field of Industrial Application] This invention uses a thin film formed on a base material as a strain gauge to measure the strain generated on the base material in response to the force, load, etc. applied to the base material. The present invention relates to a load transducer that detects force, load, etc. by detecting changes in electrical resistance of the thin film.
従来の荷重変換器に利用されているひずみゲージは、バ
ルク形の箔ゲージが一般的であり、これら従来の箔ゲー
ジは、Ｃｕ−Ｎｉ、Ｎｉ−Ｃｒ等の金属間化合物で構成
されているものが大部分である。Strain gauges used in conventional load transducers are generally bulk-type foil gauges, and these conventional foil gauges are made of intermetallic compounds such as Cu-Ni and Ni-Cr. is the majority.
そして従来のこの種ひずみゲージは抵抗温度特性に対す
る安定性は良いもののゲージ率が低い（Ｃｕ−Ｎｉ合金
で約２．０〜２．１）という欠点がある。Although conventional strain gauges of this type have good stability with respect to resistance-temperature characteristics, they have the disadvantage of a low gauge factor (approximately 2.0 to 2.1 for Cu--Ni alloys).
また、接着形ひずみゲージの場合、使用温度条−件や湿
度条件等による接着剤の選定、接着力の経時変化および
ひずみゲージに対する拘束力、つまりひずみゲージの感
度に及ぼす影響等、種々の問題を検討しなければならな
いと言う欠点がある。In addition, in the case of adhesive strain gauges, there are various issues such as the selection of adhesive depending on the operating temperature and humidity conditions, changes in adhesive strength over time, and the effect of binding force on the strain gauge, that is, the sensitivity of the strain gauge. There are drawbacks that must be considered.
一方、ゲージ率の高いものとして半導体ひずみゲージが
荷重変換器に利用されつつあるが、抵抗の温度特性やひ
ずみに対する抵抗値変化の直線性等、安定性に問題があ
ると言う欠点がある。On the other hand, semiconductor strain gauges with a high gauge factor are being used in load transducers, but they have drawbacks such as stability problems such as temperature characteristics of resistance and linearity of resistance change with respect to strain.
この発明は、前記従来のひずみゲージの欠点であるゲー
ジ率の低さ、抵抗温度特性及び抵抗値変化の直線性等の
問題点を解決することを技術的課題としたもので、安定
性が良くてゲージ率が高（、直線性等も良いひずみゲー
ジを用いた荷重変換器を得ることを目的としたものであ
る。This invention aims to solve the problems of the conventional strain gauges, such as low gauge factor, resistance temperature characteristics, and linearity of resistance change. The purpose is to obtain a load transducer using a strain gauge with a high gauge factor (and good linearity, etc.).
この発明は、ひずみゲージの材料であるＣｕ、Ｎｉ＋−
Ｃｒ等の物質をひとつだけイオン化処理により、或いは
複数の物質の内、少なく共そのひとつをイオン化処理に
よりその結晶性、配向性及び組成比等の物性の内、少な
く共ひとつを制御して起歪体としての基材上に上記物質
のひとつまたは複数の物質を薄膜形成し、この薄膜をひ
ずみ検知部として更には論理回路部として用いることに
より性能の良い荷重変換器を得るように構成したもので
ある〔実施例〕
この発明の一実施例を図面に基づいて説明する、第１図
は、電子秤の荷重変換器として一般に用いられているロ
ードセルを示したもので、（ｌ）は起歪体、（２）及び
（３）は各々固定剛体部及び可動剛体部であって、両割
体部（２）、（３）の各上下端部は互いに長さが等しく
且つ平行な上ビーム（４）及び下ビーム（５）でもって
連結されている。上ビーム（４）及び下ビーム（５）に
は各々２個所ずつ薄肉部のひずみ部（６）、（６）及び
（７）、（７）が設けられ、このひずみ部（６）、（６
）に各々ひずみ検知部としてのひずみゲージ（８）、（
８）及び（９）、（９）が設けられている。This invention is based on Cu, Ni+-, which is the material of the strain gauge.
By ionizing only one substance such as Cr, or by ionizing at least one of multiple substances, at least one of its physical properties such as crystallinity, orientation, and composition ratio can be controlled to generate strain. A load transducer with good performance is obtained by forming a thin film of one or more of the above substances on a base material as a body and using this thin film as a strain detection section and furthermore as a logic circuit section. [Embodiment] An embodiment of the present invention will be explained based on the drawings. Fig. 1 shows a load cell that is generally used as a load converter for electronic scales, and (l) is a strain-generating body. , (2) and (3) are a fixed rigid body part and a movable rigid body part, respectively, and the upper and lower ends of both split body parts (2) and (3) are parallel to each other and have the same length as the upper beam (4). ) and a lower beam (5). The upper beam (4) and the lower beam (5) are each provided with strained portions (6), (6) and (7), (7) at two thin-walled portions.
), strain gauges (8) and (
8), (9), and (9) are provided.
これらのひずみゲージがホイーストンブリフジに接続さ
れて可動剛体部（３）に負荷された荷重Ｐによる起歪体
（１）のひずみを電気抵抗値の変化により検出して荷重
を検出するようにされている。These strain gauges are connected to the Wheatstone Bridge to detect the strain of the strain body (1) due to the load P applied to the movable rigid body part (3) by detecting the change in electrical resistance value, thereby detecting the load. has been done.
ひずみゲージとしては、前記のように一般に接着型のＣ
ｕ−Ｎｉ合金が用いられているが、この発明、 では
、例えばクラスタ・イオン・ビーム法（以下ＩＣＢ法と
称す）でもってひずみゲージ材料をイオン化処理して起
歪体（１）のひずみ部（６）、（６）に例えばＣｕ−Ｎ
ｉ金属間化合物の薄膜を形成し、この薄膜を更にフォト
リソグラフィー等でもって所定形状のひずみゲージを形
成させるようにしたものである。As a strain gauge, as mentioned above, adhesive type C is generally used.
Although a u-Ni alloy is used, in the present invention, the strain gauge material is ionized by, for example, a cluster ion beam method (hereinafter referred to as ICB method) to form the strained portion ( 6), (6), for example, Cu-N
A thin film of an intermetallic compound is formed, and a strain gauge of a predetermined shape is formed on this thin film by photolithography or the like.
ＩＣＢ法とは、物質を密閉型るつぼ内に入れ、加熱して
噴射ノズルから高真空中にその蒸気を噴出させ、断熱膨
張によってクラスター（塊伏原子集団）を形成させそれ
をイオン化して負電圧を印加して加速し、基材に射突さ
せ、マイグレーシラン効果でもって基材上に薄膜を形成
させる方法であつて、この方法と装置の一例は高木らに
よってＰｒｏｃ、 ２ｎｄ Ｉｎｔ、 Ｃｏｎｆ、 ｏ
ｎ ｔｏｎ ５ｏｕｒｃｅｓ。In the ICB method, a substance is placed in a closed crucible, heated, and its vapor is ejected into a high vacuum from an injection nozzle. Through adiabatic expansion, clusters (agglomerated atoms) are formed, which are then ionized and applied to a negative voltage. This is a method in which a thin film is formed on a substrate by applying and accelerating it, causing it to collide with a substrate, and having a migration silane effect, and an example of this method and apparatus is described by Takagi et al. in Proc, 2nd Int, Conf, o.
n ton 5 sources.
（Ｖｉｅｎａ、 Ａｕ５ｔｒｉａ、 １９７２） 、７
９０頁に発表されているので詳細な方法と装置の説明は
省略する。(Vienna, Au5tria, 1972), 7
Since it is published on page 90, a detailed explanation of the method and apparatus will be omitted.
以下、この発明の一実施例をひずみゲージを形成する物
質としてＣｕとＮｉを用い、これら物質の内、いずれか
一方または両方を上記ＩＣＢ法によりイオン化させ、絶
縁性を有する基材或いは絶縁被膜を施した基材にＣｕ−
Ｎｉ金属間化合物の薄膜を形成させ、この薄膜をひずみ
ゲージとして、更には論理回路として適用した荷重変換
器について説明する。Hereinafter, an embodiment of the present invention will be described in which Cu and Ni are used as materials for forming a strain gauge, and one or both of these materials is ionized by the above-mentioned ICB method to form an insulating base material or an insulating coating. Cu-
A load transducer in which a thin film of Ni intermetallic compound is formed and this thin film is used as a strain gauge and further as a logic circuit will be described.
最初、ＣｕおよびＮｉを各々のるつぼに入れてＣｕを１
５３０℃〜１５８０℃、Ｎｉを２１８０℃に夫々加熱し
、そして各ノズルから高真空中に噴射させてＣｕクラス
タ及びＮｉクラスタを形成させる。そして、両クラスタ
の内いずれか一方または両方のクラスタをイオン化電子
電流１ｅ−０〜３００ｍＡでイオン化し、更に加速電圧
Ｖａ＝ ０〜５ｋＶで加速した上、基材の同一面上部分
に両クラスタを所定時間だけ射突させる、そして射突し
たＣｕクラスタ及びＮｉクラスタはマイグレーシラン効
果により薄膜のＧｏ−Ｎｉ金属間化合物に形成される。First, put Cu and Ni in each crucible and add 1 part of Cu.
They are heated to 530° C. to 1580° C. and Ni to 2180° C. and injected into a high vacuum from each nozzle to form Cu clusters and Ni clusters. Then, one or both clusters were ionized with an ionizing electron current of 1e-0 to 300 mA, further accelerated with an acceleration voltage Va of 0 to 5 kV, and both clusters were placed on the same surface of the base material. The impact is made for a predetermined period of time, and the impact Cu clusters and Ni clusters are formed into a thin film of Go--Ni intermetallic compound due to the migration silane effect.
このようにして基材に形成した薄膜を次にフォトリソグ
ラフィー等でもって所定形状のひずみゲージに形成して
荷重変換器を得る。The thin film thus formed on the base material is then formed into a strain gauge of a predetermined shape by photolithography or the like to obtain a load transducer.
上記ＩＣＢ法によりカバーグラス上に形成した幅１．５
園麺、長さ３０ｍ＋−の薄膜のひずみに対する電気抵抗
変化率の試験結果を第２図乃至第５図に示す。Width 1.5 formed on the cover glass by the above ICB method
The test results of the rate of change in electrical resistance with respect to strain of a thin film of 30 m+- length of Sonomen are shown in FIGS. 2 to 5.
第２図はＣｕクラスタのみイオン化しくイオン化電子電
流１ｅ＝ ３００ｍＡ ） 、加速電圧Ｖａ＝ ＯｋＶ
で作製したＣｕ−Ｎｉ薄膜のひずみ一電気抵抗効果を示
したもので、この場合、従来のバルクのＣｕ−Ｎｉや中
性クラスタで作製したＣｕ−Ｎｉ ｖＩｔ膜よりもゲー
ジ率が大きい、また、第３図はＣｕクラスタのみイオン
化しく Ｉｅ＝ ３００ａ＋Ａ ） 、加速電圧Ｖａを
ＯｋＶから５ｋＶまで変えて作製したＣｕ−Ｎｉ薄膜の
ひずみ一電気抵抗効果を示したもので、加速電圧Ｖａ＝
ＯｋＶでゲージ率は最大で約２５となる。さらに加速
電圧を増していくと、ゲージ率は低下する。Figure 2 shows that only Cu clusters are ionized, ionization electron current 1e = 300mA), acceleration voltage Va = OkV
This figure shows the strain-electrical resistance effect of the Cu-Ni thin film fabricated by the method. Figure 3 shows the strain-electrical resistance effect of a Cu-Ni thin film prepared by changing the accelerating voltage Va from OkV to 5 kV, where only the Cu clusters are ionized (Ie=300a+A), and the accelerating voltage Va=
At OkV, the maximum gauge factor is about 25. As the accelerating voltage is further increased, the gauge factor decreases.
第４図はＮｉクラスタのみイオン化しく Ｉｅ＝ ３０
抛Ａ）、加速電圧ＶａをＯｋＶから５ｋＶまで変えて作
製したＣｕ−Ｎｉ薄膜のびずみ一電気抵抗効果を示した
もので、この場合、加速電圧Ｖａに対するゲージ率の変
化はＶａ＝ １ｋＶの時で約１２である。In Figure 4, only Ni clusters are ionized, Ie = 30
抛A) shows the strain-electrical resistance effect of a Cu-Ni thin film prepared by changing the acceleration voltage Va from OkV to 5kV. In this case, the change in gauge factor with respect to the acceleration voltage Va is when Va = 1kV. It is about 12.
尚、第３図及び第４図のＣｕ−Ｎｉの組成比はいずれも
約８０：２０である。Incidentally, the Cu--Ni composition ratio in both FIGS. 3 and 4 is about 80:20.
更に第５図はＣｕクラスタのみイオン化しく Ｉｅ＝３
００ｍＡ ） 、Ｖａ＝ ５ｋＶで作製したＣｕ−Ｎｉ
薄膜のひずみ一電気抵抗効果を組成をパラメータとして
示したもので、Ｎｉの量が少なくなるほどゲージ率が大
きくなっている。Furthermore, in Figure 5, only Cu clusters are ionized, Ie=3
00mA), Cu-Ni fabricated at Va=5kV
This graph shows the strain-electrical resistance effect of a thin film using the composition as a parameter, and the gauge factor increases as the amount of Ni decreases.
一方、第６図及び第７図は、ガラス基材上にＩＣＢ法に
より作製したＣｕ−Ｎｉ薄膜の結晶性をＸ線反射回折測
定によって調べたＸ線回折パターンの一例であって、い
ずれもイオン化電子電流 Ｉｅｗ３００ｄ 、加速電圧
Ｖａ＝ ＯｋＶ及び５ｋＶ ｓ Ｃｕ−Ｎｔ組成比が約
８０：２０である。On the other hand, FIGS. 6 and 7 are examples of X-ray diffraction patterns obtained by examining the crystallinity of a Cu-Ni thin film produced by the ICB method on a glass substrate by X-ray reflection diffraction measurement. Electron current Iew300d, accelerating voltage Va=OkV and 5kVs Cu-Nt composition ratio is about 80:20.
そして第６図はＣｕクラスタのみイオン化した場合、第
７図はＮｉクラスタをイオン化した場合を示しており、
各々 ２θ−４３，５０”付近に回折ピークを持ち（１
１１）面が優先配向し、更に加速電圧Ｖａの増加により
回折ピーク強度が増大している。Figure 6 shows the case where only Cu clusters are ionized, and Figure 7 shows the case where Ni clusters are ionized.
Each has a diffraction peak near 2θ-43,50” (1
11) The plane is preferentially oriented, and the diffraction peak intensity increases as the accelerating voltage Va increases.
このことはイオン化することによって結晶性や配向性を
制御出来ることを示している。This shows that crystallinity and orientation can be controlled by ionization.
以上のように、ＩＣＢ法で作製したＣｕ−Ｎｉ薄膜は、
最大２５位のゲージ率をもつが、イオン化電子電流の大
きさ、加速電圧の大きさ、いずれのクラスタをイオン化
するか等により、薄膜の結晶性、配向性及び組成を自由
に制御して任意のゲージ率を有する薄膜をイオン化処理
によって得ることができ、基材としての起歪体に所定の
ゲージ率を有する薄膜を形成させ、更にこれをフォトリ
ソグラフィー等でもってひずみゲージを形成させること
によってゲージ率が高く、直線性等の性能の良い荷重変
換器を得ることができる。As mentioned above, the Cu-Ni thin film produced by the ICB method is
Although it has a maximum gauge factor of about 25, the crystallinity, orientation, and composition of the thin film can be freely controlled by adjusting the magnitude of the ionizing electron current, the magnitude of the accelerating voltage, which clusters are ionized, etc. A thin film having a predetermined gauge factor can be obtained by ionization treatment, and the gauge factor can be obtained by forming a thin film having a predetermined gauge factor on a strain-generating body as a base material, and then forming a strain gauge using photolithography or the like. It is possible to obtain a load transducer with high performance such as high linearity.
尚、上記実施例ではＩＣＢ法によりＣｕクラスタまたは
Ｎｉクラスタのいずれかをイオン化処理してＣｕ−Ｎｉ
ｉｉ膜を形成させたが、両りラスタ共イオン化処理し
ても良いし、ＩＣＢ法以外の方法、例えばイオンビーム
スパッタ法でイオン化処理して薄膜を形成させても良い
。In the above example, either the Cu cluster or the Ni cluster is ionized by the ICB method to form a Cu-Ni cluster.
ii film was formed, but both rasters may be subjected to ionization treatment, or a thin film may be formed by ionization treatment by a method other than the ICB method, for example, an ion beam sputtering method.
また、Ｃｕ及びＮｉ以外にＮｉ及びＣｒ’を用いたり、
アモルファスシリコン等を用いて薄膜を形成させても良
い。In addition, Ni and Cr' may be used in addition to Cu and Ni,
A thin film may be formed using amorphous silicon or the like.
更に、薄膜を形成させる物質は上記のように二種類以外
に一種類でも良く、また三種類以上でも良い。Furthermore, the number of substances forming the thin film may be one type in addition to the two types described above, or three or more types may be used.
また、薄膜は一層のみならず複層でもよく以下これにつ
いて説明する。Further, the thin film may be not only a single layer but also a multilayer, which will be explained below.
第８図は基材としての金属製起歪体（１）に、絶縁層（
１０）を介して一層の薄膜（１１）を形成させた例であ
って、この薄膜（１１）は単一物質の場合、イオン化処
理により形成させる。また複数の物質で形成させる場合
は、少なく共ひとつの物質をイオン化処理する。そして
この薄膜（１１）を例えばフォトリソグラフィー等でも
ってひずみゲージを形成させてひずみ検知部（１２）を
構成する。Figure 8 shows a metal strain body (1) as a base material, an insulating layer (
This is an example in which a single layer of thin film (11) is formed through a thin film (10), and if this thin film (11) is made of a single substance, it is formed by ionization treatment. Further, in the case of forming a plurality of substances, at least one substance is ionized. Then, a strain gauge is formed from this thin film (11) by, for example, photolithography, thereby configuring a strain sensing section (12).
また第９図に示すようにひずみ検知部（１２）と論理回
路部（１３）とを並設した一層の薄膜を形成することも
可能である。Furthermore, as shown in FIG. 9, it is also possible to form a single layer thin film in which the strain detection section (12) and the logic circuit section (13) are arranged side by side.
この場合、各々を同種または異種の単一物質をイオン化
処理により形成してもよいし、或いは複数の物質の内、
少なく共ひとつの物質をイオン化処理して同−又は異種
の物質の薄膜を形成しても良い。In this case, each may be formed by ionizing a single substance of the same or different types, or one of a plurality of substances,
At least one substance may be ionized to form a thin film of the same or different substances.
更に、ひずみ検知部（１２）及び論理回路部（１３）の
一方を単一物質により他方を複数の物質により、各々イ
オン化処理によつて薄膜を形成させることもできる。Furthermore, it is also possible to form a thin film in one of the strain sensing section (12) and the logic circuit section (13) by using a single material and the other by using a plurality of materials through ionization treatment.
一方、薄膜を複層に形成することも可能であって、例え
ば二層にする場合は第１０図に示すように、最初にひず
み検知部（１２）を構成するひずみ検知層を形成し、フ
ォトリソグラフィー等でもってひずみゲージを形成した
後、絶縁層（ｌｏ）を介して論理回路部（１３）を構成
する論理回路層を形成し、同様にフォトリソグラフィー
等でもって論理回路を形成する。On the other hand, it is also possible to form a thin film in multiple layers. For example, in the case of two layers, as shown in FIG. After forming a strain gauge by lithography or the like, a logic circuit layer constituting a logic circuit section (13) is formed via an insulating layer (lo), and a logic circuit is similarly formed by photolithography or the like.
この場合に於いても第９図に示した実施例と同、様に、
ひずみ検知層及び論理回路層は各々同−又は異種で且つ
単−物質又は複数の物質を任意に選択してイオン化処理
により形成することができる。In this case, similarly to the embodiment shown in FIG.
The strain sensing layer and the logic circuit layer can be formed of the same or different types of materials, and can be formed by arbitrarily selecting a single material or a plurality of materials and performing an ionization process.
また、最初に論理回路部（１３）を構成する論理回路層
を形成し、次にひずみ検知部（１２）を構成するひずみ
検知層を形成することもできる。Alternatively, the logic circuit layer constituting the logic circuit section (13) can be formed first, and then the strain detection layer constituting the strain detection section (12) can be formed.
以上説明したように、この発明によれば、単一または、
複数の物質をイオン化処理によってその結晶性、配向性
及び組成比等の物性を自由に制御でき、従ってその物性
の内、少なく共ひとつを制御することによって高いゲー
ジ率を有する薄膜が得られ、この薄膜をひずみ検知部と
して用いることによって、バルク形のひずみゲージに比
べてゲージ率が格段に高く、また、半導体ひずみゲージ
に比べて直線性が良い等の性能の良い荷重変換器が得ら
れる。As explained above, according to the present invention, a single or
By ionizing multiple substances, it is possible to freely control their physical properties such as crystallinity, orientation, and composition ratio.Thus, by controlling at least one of these physical properties, a thin film with a high gauge factor can be obtained. By using a thin film as a strain sensing section, a load transducer with good performance such as a much higher gauge factor than a bulk type strain gauge and better linearity than a semiconductor strain gauge can be obtained.
また、イオン化処理条件を種々選択し、或いは複数の物
質の内、どの物質をイオン化処理するかにより種々のゲ
ージ率を有し、且つ直線性等、性能の良い荷重変換器が
得られる。Further, by selecting various ionization processing conditions or by selecting which substance out of a plurality of substances is ionized, load transducers with various gauge factors and good performance such as linearity can be obtained.
また、イオン化処理によって直接、起歪体としての基材
上に薄膜を作製し、これをひずみゲージとして用いるか
ら従来の接着形ひずみゲージのような接着剤は不要であ
り、正確にひずみがひずみゲージに伝達されると共に使
用温度、湿度等の影響をほとんど受けない性能の良い荷
重変換器が得られる。In addition, since a thin film is created directly on the base material as a strain-generating body by ionization treatment and used as a strain gauge, there is no need for an adhesive like in conventional adhesive strain gauges, and the strain can be accurately measured. This results in a load transducer with good performance that is almost unaffected by operating temperature, humidity, etc.
更にまた、ひずみ検知部や論理回路部等をイオン化処理
によって作製した薄膜にて一層に並設し或いは複層に設
けることができ、誤配線が皆無で且つひずみ検出回路が
コンパクトな荷重変換器を得ることができ、総じてひず
み検出精度が高く且つ安定性の高い荷重変換器が得られ
る等、諸種の多大な効果が得られる。Furthermore, the strain detection section, logic circuit section, etc. can be arranged in a single layer or in multiple layers using thin films made by ionization processing, and a load transducer with no wiring errors and a compact strain detection circuit can be created. In general, various great effects can be obtained, such as a load transducer with high strain detection accuracy and high stability.
第１図は電子秤に用いられる荷重変換器の一例の斜視図
、第２図乃至第７図は、この発明においてＩＣＢ法によ
りイオン化処理して作製したＣｕ−Ｎｉ薄膜の特性を示
す図であって、第２図はＣｕ−Ｎｉ薄膜のびずみ一電気
抵抗効果を示す図であり、バルク形Ｃｕ−Ｎｉ及び中性
Ｃｕ−Ｎｉの特性を併記しである、第３図はＣｕ−Ｎｉ
薄膜のひずみ一電気抵抗効果を加速電圧をパラメータと
して示す図、第４図はＣｕす
−Ｎｉ薄膜のひずみ一電気抵抗効果を加速電圧をパラメ
ータとして示す図、第５図はＣｕ−Ｎｉ薄膜のひずみ一
電気抵抗効果をＮｉの組成比をパラメータとして示す図
である。また、第６図はＣｕ−Ｎｉ薄膜のＸ線回折パタ
ーンを示す図、第７図はＣｕ−Ｎｉ薄膜のＸ線回折パタ
ーンを示す図である。第８図乃至第１０図は、この発明
の詳細な説明する為の図であり、第８図は薄膜をひずみ
検知部として用いる図、第９図はひずみ検知部と論理回
路部とを一層の薄膜にした場合の図、第１０図はひずみ
検知部と論理回路部とを二層の膜にした場合の図である
。
１・・・基材（起歪体）、６．７・・・ひずみ部、８，
９・・・ひずみゲージ、１０．１０・・・眸縁層、１１
・・・薄膜、１２・・・ひずみ検知部、１３・・・論理
回路部。FIG. 1 is a perspective view of an example of a load transducer used in an electronic scale, and FIGS. 2 to 7 are diagrams showing the characteristics of a Cu-Ni thin film produced by ionization using the ICB method in this invention. Figure 2 is a diagram showing the distortion-electrical resistance effect of a Cu-Ni thin film, and also shows the characteristics of bulk Cu-Ni and neutral Cu-Ni.
Figure 4 shows the strain-electrical resistance effect of a thin film using accelerating voltage as a parameter. Figure 4 shows the strain-electrical resistance effect of a Cu-Ni thin film using accelerating voltage as a parameter. Figure 5 shows the strain-electrical resistance effect of a Cu-Ni thin film. FIG. 3 is a diagram showing the electrical resistance effect using the Ni composition ratio as a parameter. Further, FIG. 6 is a diagram showing an X-ray diffraction pattern of a Cu--Ni thin film, and FIG. 7 is a diagram showing an X-ray diffraction pattern of a Cu--Ni thin film. 8 to 10 are diagrams for explaining the present invention in detail. FIG. 8 is a diagram in which a thin film is used as a strain detection section, and FIG. 9 is a diagram in which a strain detection section and a logic circuit section are integrated FIG. 10 is a diagram showing a case where a thin film is used, and FIG. 10 is a diagram when a two-layer film is used for the strain detection section and the logic circuit section. 1... Base material (flexible body), 6.7... Strain part, 8,
9...Strain gauge, 10.10...Edge layer, 11
. . . thin film, 12 . . . strain detection section, 13 . . . logic circuit section.
Claims (22)
基材上に上記物質を薄膜形成したことを特徴とする荷重
変換器。(1) A load transducer characterized in that a thin film of the substance is formed on a base material by controlling the physical properties of the substance by ionizing the substance.
を与え、イオンのもつ電荷効果を併用して附着力よく直
接、基材に装着したことを特徴とする特許請求の範囲第
１項記載の荷重変換器。(2) Load conversion according to claim 1, characterized in that the above substance is directly attached to the base material with good adhesion force by applying acceleration energy through ionization treatment and also using the charge effect of ions. vessel.
り、これらの物性の内、少なく共ひとつをイオン化処理
により制御することを特徴とする特許請求の範囲第１項
記載の荷重変換器。(3) The load conversion according to claim 1, wherein the physical properties are the crystallinity, orientation, and composition ratio of the substance, and at least one of these physical properties is controlled by ionization treatment. vessel.
特許請求の範囲第１項記載の荷重変換器。(4) The load transducer according to claim 1, wherein the thin film is a strain sensing section.
た一層の膜であることを特徴とする特許請求の範囲第１
項記載の荷重変換器。(5) Claim 1, characterized in that the thin film is a single layer film in which a strain detection section and a logic circuit section are arranged side by side.
Load transducer as described in section.
請求の範囲第１項記載の荷重変換器。(6) The load converter according to claim 1, wherein the thin film is a multilayer film.
理回路層であり、他方の層がひずみ検知層であることを
特徴とする特許請求の範囲第６項記載の荷重変換器。(7) The load according to claim 6, wherein the multilayer film is two layers, one of which is a logic circuit layer and the other layer is a strain detection layer. converter.
請求の範囲第１項、第４項、第５項又は第６項記載の荷
重変換器。(8) The load transducer according to claim 1, 4, 5, or 6, wherein the thin film is made of a single metal.
あることを特徴とする特許請求の範囲第６項又は第７項
記載の荷重変換器。(9) The load transducer according to claim 6 or 7, wherein all or part of the multilayer membrane is made of a single metal of a different type.
金属であることを特徴とする特許請求の範囲第５項記載
の荷重変換器。(10) The load converter according to claim 5, wherein the strain detection section and the logic circuit section are made of different types of single metal.
ン化処理によりその物性を制御し、且つ残りの物質と共
に基材上に薄膜形成したことを特徴とする荷重変換器。(11) A load transducer characterized in that the physical properties of at least one substance among a plurality of substances are controlled by ionization treatment, and a thin film is formed on a base material together with the remaining substances.
より加速エネルギーを与え、イオンのもつ電荷効果を併
用して附着力よく直接、基材に装着したことを特徴とす
る特許請求の範囲第１１項記載の荷重変換器。(12) The substance to be ionized is directly attached to a base material with good adhesion force by applying acceleration energy through ionization treatment and also using the charge effect of ions. load transducer.
あり、これら物性の内、少なく共ひとつをイオン化処理
により制御することを特徴とする特許請求の範囲第１１
項記載の荷重変換器。(13) Claim 11, wherein the physical properties are the crystallinity, orientation, and composition ratio of the substance, and at least one of these physical properties is controlled by ionization treatment.
Load transducer as described in section.
る特許請求の範囲第１１項記載の荷重変換器。(14) The load transducer according to claim 11, wherein the thin film is a strain sensing section.
した一層の膜であることを特徴とする特許請求の範囲第
１１項記載の荷重変換器。(15) The load transducer according to claim 11, wherein the thin film is a single layer film in which a strain detection section and a logic circuit section are arranged side by side.
許請求の範囲第１１項記載の荷重変換器。(16) The load transducer according to claim 11, wherein the thin film is a multilayer film.
論理回路層であり、他方の層がひずみ検知層であること
を特徴とする特許請求の範囲第１６項記載の荷重変換器
。(17) The load according to claim 16, wherein the multilayer film is two layers, one of which is a logic circuit layer and the other layer is a strain detection layer. converter.
る特許請求の範囲第１１項、第１４項又は第１５項記載
の荷重変換器。(18) The load transducer according to claim 11, 14, or 15, wherein the thin film is an intermetallic compound.
を特徴とする特許請求の範囲第１６項又は第１７項記載
の荷重変換器。(19) The load transducer according to claim 16 or 17, wherein each of the multilayer films is an intermetallic compound.
理された単一金属の膜とで形成されていることを特徴と
する特許請求の範囲第１６項又は第１７項記載の荷重変
換器。(20) Load conversion according to claim 16 or 17, wherein the multilayer film is formed of an intermetallic compound film and an ionized single metal film. vessel.
物質の膜であることを特徴とする特許請求の範囲第１６
項又は第１７項記載の荷重変換器。(21) Claim 16, characterized in that each of the multilayer membranes is a membrane of a different substance that has been ionized.
The load converter according to item 1 or item 17.
は金属間化合物であり、他方がイオン化処理された単一
金属であることを特徴とする特許請求の範囲第１５項記
載の荷重変換器。(22) Load conversion according to claim 15, wherein the strain detection section and the logic circuit section are one of which is an intermetallic compound and the other is an ionized single metal. vessel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60065498A JP2506064B2 (en) | 1985-03-28 | 1985-03-28 | Load transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60065498A JP2506064B2 (en) | 1985-03-28 | 1985-03-28 | Load transducer |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29330695A Division JP2619849B2 (en) | 1995-10-17 | 1995-10-17 | Load transducer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61223524A true JPS61223524A (en) | 1986-10-04 |
| JP2506064B2 JP2506064B2 (en) | 1996-06-12 |
Family
ID=13288812
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60065498A Expired - Lifetime JP2506064B2 (en) | 1985-03-28 | 1985-03-28 | Load transducer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2506064B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1992005416A1 (en) * | 1990-09-26 | 1992-04-02 | Ishida Scales Mfg. Co., Ltd. | Load cell |
| CN101813536A (en) * | 2010-04-19 | 2010-08-25 | 南京航空航天大学 | Two-component large-load force sensor |
| JP2014025755A (en) * | 2012-07-25 | 2014-02-06 | Honda Motor Co Ltd | Test piece for electron microscope, and manufacturing method of the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5842941A (en) * | 1981-09-07 | 1983-03-12 | Toshiba Corp | Load cell |
-
1985
- 1985-03-28 JP JP60065498A patent/JP2506064B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5842941A (en) * | 1981-09-07 | 1983-03-12 | Toshiba Corp | Load cell |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1992005416A1 (en) * | 1990-09-26 | 1992-04-02 | Ishida Scales Mfg. Co., Ltd. | Load cell |
| US5306873A (en) * | 1990-09-26 | 1994-04-26 | Ishida Scales Mfg. Co., Ltd. | Load cell with strain gauges having low temperature dependent coefficient of resistance |
| CN101813536A (en) * | 2010-04-19 | 2010-08-25 | 南京航空航天大学 | Two-component large-load force sensor |
| JP2014025755A (en) * | 2012-07-25 | 2014-02-06 | Honda Motor Co Ltd | Test piece for electron microscope, and manufacturing method of the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2506064B2 (en) | 1996-06-12 |
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