JPS61216324A - Contracted projection type exposure device - Google Patents
Contracted projection type exposure deviceInfo
- Publication number
- JPS61216324A JPS61216324A JP60057218A JP5721885A JPS61216324A JP S61216324 A JPS61216324 A JP S61216324A JP 60057218 A JP60057218 A JP 60057218A JP 5721885 A JP5721885 A JP 5721885A JP S61216324 A JPS61216324 A JP S61216324A
- Authority
- JP
- Japan
- Prior art keywords
- exposure
- mask
- light quantity
- exposure light
- control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 238000005286 illumination Methods 0.000 claims description 11
- 229920002120 photoresistant polymer Polymers 0.000 claims 1
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 abstract description 11
- 230000000873 masking effect Effects 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 4
- 101700004678 SLIT3 Proteins 0.000 abstract description 2
- 102100027339 Slit homolog 3 protein Human genes 0.000 abstract description 2
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はホトレノストの露光に消費される露光光量を測
定しクク制御することによシ、正確な露光量コントロー
ルをなし得る縮小投影式露光装置に関する。[Detailed Description of the Invention] [Field of Industrial Application] The present invention provides a reduction projection type exposure apparatus that can accurately control the exposure amount by measuring and controlling the amount of exposure light consumed for exposing Photorenost. Regarding.
最近の超高集積度半導体デバイスの製造工程の如く、微
細パターンの忠実な再現を要求される縮小投影式露光装
置において、転写／ＩＰターンの寸法の管理（Ｃｒｉｔ
ｉｃａｌ Ｄｅｍｅｎｓｉｏｎ Ｃｏｎｔｒｏｌ ：
ＣＤコントロール）は、半導体基板より得られる半導体
素子の良品率を左右する重要な要素となっている。In reduction projection exposure equipment that requires faithful reproduction of fine patterns, such as in the manufacturing process of recent ultra-highly integrated semiconductor devices, it is necessary to manage the dimensions of transfer/IP turns (Crit).
ical Demension Control:
CD control) is an important factor that influences the yield rate of semiconductor devices obtained from semiconductor substrates.
この寸法は、露光量に依存しておシ、従って露光量コン
トロールの正確さに依存しているといってよいであろう
。It can be said that this dimension depends on the exposure amount and therefore on the accuracy of the exposure amount control.
従来の縮小投影式露光装置における露光量コントロール
は、露光マスクの前段に位置する露光照明系内部におい
て露光光の強度を測定し、これを積算することにより、
設定された露光量となるようシャッタ一時間を制御する
ものである。Exposure amount control in conventional reduction projection exposure equipment measures the intensity of the exposure light inside the exposure illumination system located in front of the exposure mask, and integrates the intensity.
This is to control the shutter time so that the set exposure amount is achieved.
上述の従来の方式の場合、露光照明系からの出力として
の光量は制御されるものの、露光マスクの材質の違い、
また、特にペリクル膜の如く、経時的に透過率の変化す
る部材を装着した露光マスク等の様に、露光照明系と投
影光学系との間において透過率が変化した場合において
は、これらの影響を防止することはできず、従って、従
来、露光マスクの交換時及び定期的にテスト露光を行な
い、この結果により、露光量の設定を見直す作業力必要
とされ、これに要する時間、労力は計りしれないものと
なっていた。In the case of the conventional method described above, although the amount of light output from the exposure illumination system is controlled, there are differences in the material of the exposure mask,
In addition, when the transmittance changes between the exposure illumination system and the projection optical system, such as an exposure mask equipped with a member whose transmittance changes over time, such as a pellicle film, these effects may be affected. Therefore, in the past, test exposure was performed when replacing the exposure mask and periodically, and the work force was required to review the exposure settings based on the results, and the time and effort required for this was immeasurable. It had become something I couldn't understand.
本発明は５上述の従来の方法の持つ問題点を除去し、露
光マスクの材質１．ｉｊ リクル膜有無等の条件を問わ
ず、安定した露光量コントロールを得ることを可能とし
、作業効率を飛躍的に向上させ、また、装置そのものの
効率的運用を可能とし得る縮小投影式露光装置を提供す
ることを目的とするものである。The present invention eliminates the problems of the conventional methods described in 5. The material of the exposure mask 1. ij We have developed a reduction projection exposure system that enables stable exposure control regardless of conditions such as the presence or absence of Lickle film, dramatically improves work efficiency, and enables efficient operation of the equipment itself. The purpose is to provide
本発明は露光マスクに描かれた像をホトレノストで被覆
された半導体基板上に露光転写させる縮小投影式露光装
置において、露光マスク上の素子・リーン周辺部におい
て透過した露光光量を検出する光量センサーと、光量セ
、／サーの出力を積算することにより、露光照明系に設
けられたシャッターの開閉動作の制御を行なう制御部と
を有することを特徴とする縮小投影式露光装置である。The present invention relates to a reduction projection type exposure apparatus that exposes and transfers an image drawn on an exposure mask onto a semiconductor substrate coated with photorenost. The reduction projection type exposure apparatus is characterized in that it has a control section that controls opening and closing operations of a shutter provided in an exposure illumination system by integrating the outputs of the light intensity sensor, the light intensity sensor, and the /sar.
以下、本発明の一実施例を図面を参照して詳細に説明す
る。Hereinafter, one embodiment of the present invention will be described in detail with reference to the drawings.
第１図は１本発明の一実施例を示す構成図である。図中
、１は露光マスク、２は露光マスク１を塵埃より保護す
るためにマスク１の上下両面に装着されたペリクル膜、
３は露光量コントロール用スリット、４は光量センサー
、５は光路中にシャッター５＆を備えた露光照明系、６
は縮小投影レンズ、７はマスキングζアＡ？−チャー、
８は露光照明、９は制御部を各々示すものとする。FIG. 1 is a block diagram showing an embodiment of the present invention. In the figure, 1 is an exposure mask, 2 is a pellicle film attached to both the upper and lower surfaces of the mask 1 to protect the exposure mask 1 from dust,
3 is a slit for controlling the exposure amount, 4 is a light amount sensor, 5 is an exposure illumination system equipped with a shutter 5 & in the optical path, 6
is the reduction projection lens, and 7 is the masking ζA? -char,
Reference numeral 8 indicates an exposure illumination, and reference numeral 9 indicates a control section.
本縮小投影式露光装置における霧光量コントロールは、
露光マスク１を透過した後の露光光を。The fog light amount control in this reduction projection exposure system is as follows:
Exposure light after passing through exposure mask 1.
露光マスク１と縮小投影レンズ６との間に設けられた光
量セ／す４により検出し、その出力を制御部９にて積算
して行なわれる。It is detected by a light quantity sensor 4 provided between the exposure mask 1 and the reduction projection lens 6, and its output is integrated by the control section 9.
露光照明系５内に設けられたシャッター５１が開放する
と同時に、霧光照明８はペリクル膜２を装着した露光マ
スク１上にマスキング・アパーチャアを介して照射され
、露光マスク１上に設けられた遮光帯により露光マスク
１上の素子ノ９ターンの領域に制限されて透過し、縮小
投影レンズ６を介して半導体基板１０に投影される。こ
の露光マスク１上には、遮光帯中に露光光量コントロー
ル用光量センサー４へ露光光を照射するスリット３が設
けられておシ、このスリット３により投影露光と同時に
同強度の露光光が光量センサー４に入射されることにな
る。即ち、光量センサー４に入射される露光光の強度は
／Ｚ リクル膜２等を透過することにより、ある程度減
衰された後の実際にホトレノストを感光する為のものと
同じものとなる。このセンサー４の出力を制御部９にて
積算し、該制御部９の指令によりシャッター５１の開閉
動作の制御を行う。At the same time as the shutter 51 provided in the exposure illumination system 5 is opened, the fog light illumination 8 is irradiated onto the exposure mask 1 equipped with the pellicle film 2 through the masking aperture, The light is transmitted through a region of nine turns of the element on the exposure mask 1 by the light-shielding band, and is projected onto the semiconductor substrate 10 via the reduction projection lens 6 . On this exposure mask 1, a slit 3 is provided in the light shielding zone for irradiating the exposure light to the light amount sensor 4 for controlling the exposure light amount. It will be incident on 4. That is, the intensity of the exposure light incident on the light intensity sensor 4 is attenuated to some extent by passing through the /Z Rickle film 2, etc., and becomes the same as that for actually exposing the photorenost. The output of the sensor 4 is integrated by the control section 9, and the opening/closing operation of the shutter 51 is controlled by commands from the control section 9.
以上の様に本発明によれば、露光マスクの材質。 As described above, according to the present invention, the material of the exposure mask.
ペリクル膜の有無、劣化の程度等々の条件を問わず安定
した露光量コントロールを実現可能となり、従来の様な
ノクイロット露光後に半導体基板に得られるホトレノス
ト・ぐターンを顕微鏡により観察し、露光条件を設定し
直すといった作業が不要となるとともに、装置そのもの
の効率的運用が飛躍的に向上せしめることができる効果
を有するものである。It is now possible to achieve stable exposure control regardless of conditions such as the presence or absence of a pellicle film, the degree of deterioration, etc., and the exposure conditions can be set by observing the photorenost particles obtained on the semiconductor substrate using a microscope after conventional nokilot exposure. This has the effect of not only eliminating the need for redoing work, but also dramatically improving the efficient operation of the device itself.
第１図は本発明の一実施例を示す構成図である。
１・・・露光マスク、２・・・（リクル膜、３・・・露
光量コントロール用スリット、４・・・光量センサー、
５・・・露光照明系、６・・・縮小投影レンズ、７・・
・マスキング・ア・平−チャー、８・・・露光照明。
特許出原入 日本電気株式会社FIG. 1 is a block diagram showing an embodiment of the present invention. 1... Exposure mask, 2... (Lickle film, 3... Slit for controlling exposure amount, 4... Light amount sensor,
5... Exposure illumination system, 6... Reduction projection lens, 7...
・Masking a flat surface, 8... Exposure illumination. Patent origination NEC Corporation
Claims (1)
基板とを位置合わせして露光を施こす縮小投影式露光装
置において、露光マスク上の素子パターン周辺部で透過
した露光光量を測定する光量センサーと、該光量センサ
ーの出力を積算することにより、露光照明系に設けられ
たシャッターの開閉動作の制御を行なう制御部とを有す
ることを特徴とする縮小投影式露光装置。(1) In a reduction projection type exposure device that performs exposure by aligning an exposure mask and a semiconductor substrate covered with photoresist, a light intensity sensor that measures the amount of exposure light transmitted around the periphery of an element pattern on the exposure mask is used. 1. A reduction projection type exposure apparatus comprising: a control section that controls opening and closing operations of a shutter provided in an exposure illumination system by integrating the output of the light amount sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60057218A JPS61216324A (en) | 1985-03-20 | 1985-03-20 | Contracted projection type exposure device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60057218A JPS61216324A (en) | 1985-03-20 | 1985-03-20 | Contracted projection type exposure device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61216324A true JPS61216324A (en) | 1986-09-26 |
| JPH0548610B2 JPH0548610B2 (en) | 1993-07-22 |
Family
ID=13049387
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60057218A Granted JPS61216324A (en) | 1985-03-20 | 1985-03-20 | Contracted projection type exposure device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61216324A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01305518A (en) * | 1988-06-03 | 1989-12-08 | Canon Inc | Aligner |
| US6734445B2 (en) * | 2001-04-23 | 2004-05-11 | Intel Corporation | Mechanized retractable pellicles and methods of use |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5068066A (en) * | 1973-10-17 | 1975-06-07 | ||
| JPS57117238A (en) * | 1981-01-14 | 1982-07-21 | Nippon Kogaku Kk <Nikon> | Exposing and baking device for manufacturing integrated circuit with illuminometer |
| JPS59149024A (en) * | 1983-02-16 | 1984-08-25 | Hitachi Ltd | Semiconductor exposing device |
-
1985
- 1985-03-20 JP JP60057218A patent/JPS61216324A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5068066A (en) * | 1973-10-17 | 1975-06-07 | ||
| JPS57117238A (en) * | 1981-01-14 | 1982-07-21 | Nippon Kogaku Kk <Nikon> | Exposing and baking device for manufacturing integrated circuit with illuminometer |
| JPS59149024A (en) * | 1983-02-16 | 1984-08-25 | Hitachi Ltd | Semiconductor exposing device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01305518A (en) * | 1988-06-03 | 1989-12-08 | Canon Inc | Aligner |
| US6734445B2 (en) * | 2001-04-23 | 2004-05-11 | Intel Corporation | Mechanized retractable pellicles and methods of use |
| US7102127B2 (en) | 2001-04-23 | 2006-09-05 | Intel Corporation | Mechanized retractable pellicles and methods of use |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0548610B2 (en) | 1993-07-22 |
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