JPS61212070A - Thin film semiconductor solar cell containing amorphous material - Google Patents
Thin film semiconductor solar cell containing amorphous materialInfo
- Publication number
- JPS61212070A JPS61212070A JP60053563A JP5356385A JPS61212070A JP S61212070 A JPS61212070 A JP S61212070A JP 60053563 A JP60053563 A JP 60053563A JP 5356385 A JP5356385 A JP 5356385A JP S61212070 A JPS61212070 A JP S61212070A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- solar cell
- silicide
- semiconductor
- back electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 44
- 239000010409 thin film Substances 0.000 title claims abstract description 11
- 239000000463 material Substances 0.000 title claims description 7
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 23
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 7
- 229910052737 gold Inorganic materials 0.000 claims abstract description 5
- 229910052788 barium Inorganic materials 0.000 claims abstract description 3
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 3
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 3
- 229910052712 strontium Inorganic materials 0.000 claims abstract description 3
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 3
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 3
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 3
- 229910052709 silver Inorganic materials 0.000 claims abstract 3
- 229910052749 magnesium Inorganic materials 0.000 claims abstract 2
- 229910052758 niobium Inorganic materials 0.000 claims abstract 2
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- 229910052762 osmium Inorganic materials 0.000 claims description 2
- 229910052702 rhenium Inorganic materials 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- 229910052741 iridium Inorganic materials 0.000 claims 1
- 229910052745 lead Inorganic materials 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 230000006866 deterioration Effects 0.000 abstract description 12
- 230000003287 optical effect Effects 0.000 abstract description 5
- 230000006378 damage Effects 0.000 abstract description 2
- 229910052763 palladium Inorganic materials 0.000 abstract description 2
- 229910052697 platinum Inorganic materials 0.000 abstract description 2
- -1 of Mg Chemical compound 0.000 abstract 1
- 238000000034 method Methods 0.000 description 6
- 239000011651 chromium Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910006852 SnOy Inorganic materials 0.000 description 1
- 229910017875 a-SiN Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
〔産業上の利用分野〕
本発明は非晶質を含む薄膜半導体系太陽電池に関する。
〔従来の技術〕
従来からアモルファスシリコンを用いた太陽電池が使用
されている。
〔発明が解決しようとする問題点〕
従来から使用されているアモルファスシリコンを用いた
太陽電池では、光照射によって初期の性能劣化が大きく
、長期間にわたる信頼性が不足するという問題がある。
真性層の厚さを薄くすると劣化率が低くなるが、変換効
率も低下してしまうという問題が生ずる。
この効率の低下を抑えるため、裏面電極に高反射率のＡ
ｇ、Ａｕ、 Ｃｕなどからなる電極を用いる方法もある
が、この方法では電極を形成する金属がアモルファスシ
リコン（ａ−８ｉ：１中へ拡散し、太陽電池特性が低化
するという問題がある。
本発明は初期性能を従来の太陽電池に近い値を有した形
で、かつ電極を形成する金属の拡散による太陽電池特性
の低化を防止し、光劣化を少なくすることを目的として
なされたものである。
〔問題点を解決するための手段〕
本発明は、第１に実質的に真性な層（ｉ層）の厚さを５
００〜４０００人と従来の太陽電池にくらべて薄くし、
１層の光誘起構造が変化することによる太陽電池性能の
劣化に与える影響を低減せしめ゛、第２にｉ層を薄くす
ることによる活性層の光吸収量の低下を高反射率を有す
るＡｇ、ＡＵ、Ｃｕなどからなる裏面電極の使用で補い
、ざらに第３に裏面電極として用いるＡ（］、Ａｕ、
Ｃｕなどの半導体中への拡散による太陽電池の劣化〜破
壊を防止するために、裏面電極と半導体層との間に１０
〜８０人の厚さのシリサイド層を設けた構造にすること
により、前記目的が達成されることが見出されたことに
よりなされたものであり、光電変操作用を有する非晶質
を含む薄膜半導体層が基板上に設けられた太陽電池にお
いて、該半導体層の実質的に真性な層の厚さが５００〜
４０００人であり、裏面電極と最も裏面電橋側の半導体
層との間に透光性のシリサイド層を設けい該裏面電極が
、波長０．８層１ｍ以上の光に対する反射率が８０％以
上の値を、有する金属から形成されていることを特徴と
する非晶質を含む薄膜半導体系太Ｉ１１電池に関する。
〔実施例〕
本発明に用いる光電変操作用を有する非晶質を含む薄膜
半導体としては、Ｓｉ、 Ｇｅ、 Ｃの少なくなとも１
種を含むもの、あるいは５ｉＳＧｅＳＣの少なくとも１
種を含むものにチッ素原子や酸素原子が構成成分として
加えられているものなどがあげられ、形成された半導体
のダングリングボンドが水素原子やフッ素原子でターミ
ネートされていてもよい。
前記のような半導体の具体例としては、ａ−３ｉ：Ｈ，
ａ−３ｉ：Ｆ：Ｈｌａ−８ｉＧｅ：Ｈ，ａ−８ｉＳｎ：
Ｈ。
ａ−ＳｉＮ：ｔ（、ａ−３ｉＧｅ：Ｆ −Ｈ、ａ−３ｉ
Ｓｎ：Ｆ：Ｈ、ａ−８ｉ：Ｎ：Ｆ：Ｈ，ａ−３ｉＣ：Ｈ
、ａ−８ｉＣ：Ｆ：Ｈ、ａ−３ｉＯ：Ｈ。
ａ−３ｉＯ：Ｆ：Ｈなどがあげられ、ｎ型、ｎ型、真性
のいずれであってもよい。また該半導体かへテロ接合構
造を有するように形成されていてもよく、ホモ接合構造
を有するように形成されていてもよい。
前記半導体の厚さとしては、実質的に真性なＷＪ（ｉ層
）の厚さが５００〜４０００人、好ましくは１０００〜
４０００人、さらに好ましくは１５００〜３５００人の
半導体であるかぎり、とくに限定はない。
前記ｉ層の厚さが５００人未満になると太陽電池にした
ばあいの光電変換効率が低下し、４０００人をこえると
光劣化が増加し、いずれも好ましくない。
なお本明細書にいう実質的に真性な層〈ｉ層）とは光電
変換に対して活性な層のことであり、ドーパントにより
コンペンセートされた層であってもよい。
通常、半導体は透明電極を有する透明基板上にｐ層、ｉ
層、ｎｉｌの順に、あるいは裏面電極を有するまたは裏
面電極となる基板上にｎ層、１層、ｐｌの順に形成され
る。通常ｐ層が光入射側となるので、厚すぎると光損失
が大きくなるため、その厚さとしては３００Å以下が好
ましく、さらに好ましくは４０〜１５０人であり、ｎ層
は裏面電極側となるので厚すぎると、長波長の光の裏面
電極での反射の際の光損失が大きくなるため、その厚さ
としては３００Å以下が好ましく、さらに好ましくは４
０〜２００人、ことに好ましくは４０〜１５０人である
。
該非晶質を含む半導体には微結晶状のものが含まれてい
てもよく、少なくともシリサイド層と接する半導体層（
通常はｎ層）がマイクロクリスタリンアモルファスシリ
コンからなるばあいには、後述する裏面電極の半導体層
中への拡散が少なくなり、これによる太陽電池性能の劣
化が少なくなり好ましい。
上記説明では主としてｐＩｎ型太陽電池ついて説明した
が、ショットキー型であってもよい。
いずれのばあいでも光劣化を低減するために、光入射は
ｐ側から行なうのがよい。
本発明においては、前記のごとき非晶質を含む薄膜半導
体が、たとえば透明電極を有する透明基板上に設けられ
、最も裏面電極側の半導体層と裏面電極との間に透光性
のシリサイド層が最も裏面電極側の半導体層と裏面電極
に接して設けられ、非晶質を含む薄膜半導体系太陽電池
が製造される。
前記透明電極を有する透明基板とは、たとえばガラス、
セラミック、エポキシ系樹脂やフッ素系樹脂などの有機
高分子材料のように透光性を有する材料から形成された
厚さ０．１〜１０ｍｍ程度の基板上に、たとえばＩＴＯ
、Ｉｎ２Ｏ３、ＳｎＯ，、ＩＴＯ／５ｎ０２、Ｃｄｙ
ＳｎＯｙ （Ｘは０．５〜２、ｙは２〜４である） 、
Ｉｒｚ Ｏ＋−ｚ （Ｚは０．３３〜０．５である）
、ＺｎＯ（ｍはＯ〜０．５である）な １−ｍ
どの透明電極を５００〜１０４人程度の厚さ成長成した
ものである。
前記裏面電極としては、波長０．６Ｉ！ｒｎ以上の光に
対する反射率が８０％以上の値を有する金属からなる５
００〜１０４人程度の厚さ成長極であればとくに限定な
く使用しつる。前記のごとき金属の具体例としては、Ａ
（１、Ａｕ、 Ｃｕなどがあげられるが、これらに限定
されるものではない。なお、これら金属製の裏面電極の
外表面に耐腐食性のある金属や合金層、たとえばＣｒ、
Ｎｉ、 Ｔなどからなる層を設けることにより、裏面
電極を保護してもよい。
前記裏面電極が波長０．６−以上の光に対する反射率が
８０％以上の値を有する金属から形成されると、ｉ層を
薄くすることによる活性層の光吸収量の低下を高反射率
を有する裏面電極での反射光を有効利用することで補う
ことができる。
最も裏面電極側の半導体層と裏面電極との間に設けられ
る透光性のシリサイド層とは、裏面電極を形成する金属
が半導体中へ拡散し、半導体層の劣化〜破壊を防止する
ために設けられる層であり、裏面電極での反射光が利用
できるように、波長０．６−以上の光に対する透光性を
有し、透過率７０％以上の特性を有する層であれば使用
しつる。このようなシリサイド層の具体例としては、Ｈ
ｇ、 Ｓｒ、 Ｂａ、 Ｔｉ、 Ｚｒ、 Ｈｆ、Ｖ 、
Ｎｂ。
Ｔａ、 Ｃｒ、 Ｎｏ、Ｗ 、 Ｍｎ、 Ｒｅ、 Ｆｅ
１Ｒｕ、 Ｏｓ、 Ｃｏ、 Ｔｒ。
Ｎｉ、ＰｄまたはＰｔなどのシリサイドからなる、好ま
しくは１０〜８０人の厚さの層があげられる。
つぎに本発明の太陽電池の製法を一実施態様にもとづき
説明する。
まず透明電極を゛設けた透明基板上に、常法により非晶
質のｐ層、ｉ層、ｎ層を形成する。そののちシリサイド
形成元素、たとえばＣｒ、旧などを用いて通常の電子ビ
ーム蒸着法により、所定の厚さの層を形成する。もちろ
んシリサイド形成元素をスパッター用ターゲットを用い
てスパッター法により堆積させてもよい。
そののち常法により高反射性金属を所定の厚さに蒸着さ
せる。
第１図に示すように、前記透明基板（１）の透明電極（
３）側表面（２１に５００〜５０００人の範囲の凹凸が
あればこの部分の乱反射により半導体（４）中への光閉
込効果が増し、ＪＳＣが増すのでさらによい。
なお第１図中の（５）はシリサイド層、（６）は裏面電
極である。
また第２図に示すように、透明基板の透明電極側表面の
凹凸のかわりに透明電極（３）の半導体側表面（７１に
５００〜５０００人の範囲の凹凸が設けられていても、
前記と同様の効果かえられる。
もちろん電極を有する基板上に半導体層を形成した太陽
電池についても同様な凹凸がその電極に設けられている
方が、光閉込効果が増すのでよい。
このようにして作製された本発明の太陽電池は、このま
までも加熱による太陽電池性能の低下が少なく、良好な
特性を有するものであるが、サラニ１８０℃〜成１１ｍ
Ｋ（１８０〜４００℃程度）テ０．５〜４時間時間熱処
理すると、シリサイド形成元素層がシリサイド化し、裏
面電極とｎ層との接触をよくすることができ、その界面
の直列抵抗を減少させることができる。
もちろんシリサイド層の形成はシリサイドターゲットを
用いて行なってもよい。
このようにして製造される本発明の非晶質を含む薄膜半
導体系太陽電池は、ｉ層が薄いにもかかわらず裏面での
反射光を有効利用することで高い変換効率を有し、かつ
光劣化が少なく、耐熱性に優れている。
つぎに本発明の太陽電池を実施例にもとづき説明する。
実施例１
厚さ１０００人のＩＴＯ／ＳｎＯ２透明電極を設けた厚
さ１■の青板ガラス基板上に、基板温度約２００℃、圧
力的１ Ｔｏｒｒにて、５ｉ）ｌａおよび８２）Ｉｌ＋
からなる混合ガス、５ｉ１４Ｆ３よびＨ２からなる混合
ガス、５ｉＨａおよびＰＨｓからなる混合ガスをこの順
に用いて、グロー放電分解法にてそれぞれアモルファス
シリコンのｐ層を １２０人、ｉ層を３０００人、ｎ層
を２００人の厚さになるように堆積させた。
そののち、クロム層を電子ビーム蒸着法にて１０’ Ｔ
ｏｒｒで膜厚が２０人になるようにｎ層上に堆積させた
のち、続いてＡ（ｌを２０００人堆積させた。
ついで２００℃で２時間熱処理して太陽電池を製造した
。
えられた太陽電池の特性、最適負荷状態で２００ａ＋Ｗ
／ｃｍ２ ｘ ４０時間光照射試験後の特性、２３０’
ＣＸ６時間加熱試験後の特性をＡＭ−１１００ｍＷ／Ｃ
ｌ１１２のソーラーシミュレーターにて測定した。
結果を第１表に示す。
比較例１
１層の厚さを６０００人にし、シリサイド層を設けず裏
面電極にアルミニウム２０００人を用いたほかは実施例
１と同様にして太陽電池を作製し、えられた太陽電池の
特性を測定した。そののち実施例１と同様の試験後の特
性を測定した。結果を第１表に示す。
［以下余白］
なお第１表の性能は実施例１の初期値を基準にしたばあ
いの相対値で示しである。[Industrial Application Field] The present invention relates to a thin film semiconductor solar cell containing an amorphous material. [Prior Art] Solar cells using amorphous silicon have been used for a long time. [Problems to be Solved by the Invention] Conventionally used solar cells using amorphous silicon suffer from significant initial performance deterioration due to light irradiation, resulting in a lack of long-term reliability. If the thickness of the intrinsic layer is made thinner, the rate of deterioration will be lowered, but a problem arises in that the conversion efficiency will also be lowered. In order to suppress this decrease in efficiency, a high reflectance A
There is also a method of using electrodes made of g, Au, Cu, etc., but this method has the problem that the metal forming the electrodes diffuses into amorphous silicon (a-8i:1), deteriorating the solar cell characteristics. The present invention was made with the aim of achieving initial performance close to that of conventional solar cells, preventing deterioration of solar cell characteristics due to diffusion of metal forming electrodes, and reducing photodeterioration. [Means for solving the problems] The present invention firstly reduces the thickness of the substantially intrinsic layer (i-layer) to 5.
00 to 4,000 people and thinner than conventional solar cells,
This reduces the influence on the deterioration of solar cell performance due to changes in the photo-induced structure of one layer.Secondly, the decrease in the amount of light absorption of the active layer due to thinning of the i-layer is reduced by using Ag with high reflectivity. This is supplemented by the use of a back electrode made of AU, Cu, etc., and the third method is A(], Au,
In order to prevent deterioration or destruction of the solar cell due to diffusion of Cu into the semiconductor, there is a layer of 10
This was made based on the discovery that the above object can be achieved by creating a structure with a silicide layer of ~80 μm thickness, and a thin film containing an amorphous material having a photoelectric conversion operation. In a solar cell in which a semiconductor layer is provided on a substrate, the thickness of the substantially intrinsic layer of the semiconductor layer is 500 nm to 500 nm.
4,000 people, and a light-transmitting silicide layer is provided between the back electrode and the semiconductor layer closest to the backside electrical bridge, and the back electrode has a reflectance of 80% or more for light with a wavelength of 0.8 layer or more than 1 m. The present invention relates to a thick I11 battery containing an amorphous thin film semiconductor, characterized in that it is formed from a metal having a value of . [Example] The amorphous-containing thin film semiconductor having photoelectric conversion operation used in the present invention includes at least one of Si, Ge, and C.
containing seeds, or at least one of 5iSGeSC
Examples include those containing seeds with nitrogen atoms or oxygen atoms added as constituents, and the formed semiconductor dangling bonds may be terminated with hydrogen atoms or fluorine atoms. Specific examples of the above semiconductors include a-3i:H,
a-3i:F:Hla-8iGe:H, a-8iSn:
H. a-SiN:t(, a-3iGe:F-H, a-3i
Sn:F:H, a-8i:N:F:H, a-3iC:H
, a-8iC:F:H, a-3iO:H. Examples include a-3iO:F:H, and may be n-type, n-type, or intrinsic. Further, the semiconductor may be formed to have a heterojunction structure or may be formed to have a homojunction structure. As for the thickness of the semiconductor, the thickness of the substantially intrinsic WJ (i layer) is 500 to 4000, preferably 1000 to 4000.
There is no particular limitation as long as there are 4,000 semiconductor workers, more preferably 1,500 to 3,500 semiconductor workers. If the thickness of the i-layer is less than 500 layers, the photoelectric conversion efficiency in a solar cell will decrease, and if it exceeds 4000 layers, photodeterioration will increase, both of which are unfavorable. Note that the substantially intrinsic layer (i-layer) referred to in this specification refers to a layer active for photoelectric conversion, and may be a layer compensated with a dopant. Usually, semiconductors are formed by forming a p-layer, i
The layers are formed in this order: n layer, nil, or n layer, 1 layer, and pl on a substrate having a back electrode or serving as a back electrode. Normally, the p-layer is on the light incident side, so if it is too thick, the optical loss will increase, so the thickness is preferably 300 Å or less, more preferably 40 to 150 Å, and the n-layer is on the back electrode side. If it is too thick, the optical loss when long-wavelength light is reflected on the back electrode becomes large, so the thickness is preferably 300 Å or less, and more preferably 400 Å or less.
0 to 200 people, particularly preferably 40 to 150 people. The amorphous-containing semiconductor may include a microcrystalline semiconductor, and at least the semiconductor layer in contact with the silicide layer (
It is preferable that the n-layer (usually the n-layer) is made of microcrystalline amorphous silicon because diffusion of the back electrode (described later) into the semiconductor layer is reduced, and the resulting deterioration of solar cell performance is reduced. In the above description, the pIn type solar cell was mainly explained, but a Schottky type solar cell may also be used. In any case, in order to reduce optical deterioration, it is preferable that light be incident from the p side. In the present invention, a thin film semiconductor containing an amorphous material as described above is provided on a transparent substrate having a transparent electrode, and a transparent silicide layer is provided between the semiconductor layer closest to the back electrode and the back electrode. A thin film semiconductor solar cell including an amorphous material is manufactured by being provided in contact with the semiconductor layer closest to the back electrode and the back electrode. The transparent substrate having the transparent electrode is, for example, glass,
For example, ITO is placed on a substrate with a thickness of about 0.1 to 10 mm made of a translucent material such as ceramic, an organic polymer material such as an epoxy resin, or a fluorine resin.
, In2O3, SnO, , ITO/5n02, Cdy
SnOy (X is 0.5-2, y is 2-4),
Irz O+-z (Z is 0.33-0.5)
, ZnO (m is O~0.5), 1-m transparent electrodes are grown to a thickness of about 500 to 104. The wavelength of the back electrode is 0.6I! 5 made of metal having a reflectance of 80% or more for light of rn or more
As long as it is a growth pole with a thickness of about 00 to 104 people, it can be used without any particular restrictions. Specific examples of the metals mentioned above include A
(1) Au, Cu, etc. may be mentioned, but are not limited to these. Note that the outer surface of the back electrode made of these metals is coated with a corrosion-resistant metal or alloy layer, such as Cr,
The back electrode may be protected by providing a layer made of Ni, T, or the like. When the back electrode is formed of a metal having a reflectance of 80% or more for light with a wavelength of 0.6 or more, the decrease in the amount of light absorption of the active layer due to thinning of the i-layer can be suppressed by increasing the reflectance. This can be compensated for by effectively utilizing the reflected light from the back electrode. The light-transmitting silicide layer provided between the semiconductor layer closest to the back electrode and the back electrode is provided to prevent the metal forming the back electrode from diffusing into the semiconductor and deteriorating or destroying the semiconductor layer. In order to utilize the reflected light from the back electrode, any layer can be used as long as it has a property of transmitting light with a wavelength of 0.6 or more and a transmittance of 70% or more. A specific example of such a silicide layer is H
g, Sr, Ba, Ti, Zr, Hf, V,
Nb. Ta, Cr, No, W, Mn, Re, Fe
1Ru, Os, Co, Tr. Mention may be made of a layer of silicide, such as Ni, Pd or Pt, preferably from 10 to 80 people thick. Next, a method for manufacturing a solar cell according to the present invention will be explained based on one embodiment. First, amorphous p-layer, i-layer, and n-layer are formed by a conventional method on a transparent substrate provided with a transparent electrode. Thereafter, a layer having a predetermined thickness is formed using a silicide-forming element such as Cr, Cr, etc. by a conventional electron beam evaporation method. Of course, the silicide-forming element may be deposited by sputtering using a sputtering target. Thereafter, a highly reflective metal is deposited to a predetermined thickness by a conventional method. As shown in FIG. 1, the transparent electrode (
3) It is even better if the side surface (21) has irregularities in the range of 500 to 5000, since the diffused reflection of this part will increase the light confinement effect in the semiconductor (4) and increase the JSC. (5) is a silicide layer, and (6) is a back electrode.Also, as shown in FIG. 2, instead of the unevenness on the transparent electrode side surface of the transparent substrate, Even if there are irregularities in the range of ~5000 people,
The same effect as above can be obtained. Of course, in the case of a solar cell in which a semiconductor layer is formed on a substrate having electrodes, it is better if the electrodes are provided with similar irregularities because the light confinement effect increases. The solar cell of the present invention produced in this way has good characteristics with little deterioration in solar cell performance due to heating even as it is.
When heat treated at K (approx. 180 to 400 degrees Celsius) for 0.5 to 4 hours, the silicide-forming element layer becomes silicide, which improves the contact between the back electrode and the n-layer and reduces the series resistance at the interface. be able to. Of course, the silicide layer may be formed using a silicide target. The amorphous-containing thin film semiconductor solar cell of the present invention manufactured in this way has high conversion efficiency by effectively utilizing the light reflected on the back surface despite the thin i-layer, and has high light conversion efficiency. Has little deterioration and excellent heat resistance. Next, the solar cell of the present invention will be explained based on Examples. Example 1 5i)la and 82)Il+ were deposited on a 1-inch-thick blue plate glass substrate provided with a 1000-thick ITO/SnO2 transparent electrode at a substrate temperature of about 200°C and a pressure of 1 Torr.
A mixed gas consisting of 5i14F3 and H2, a mixed gas consisting of 5iHa and PHs were used in this order to form amorphous silicon p-layer, i-layer, and n-layer by glow discharge decomposition method. was deposited to a thickness of 200 people. After that, a chromium layer was deposited at 10'T by electron beam evaporation.
After depositing on the n-layer to a film thickness of 20 layers with orr, 2000 layers of A(l) were subsequently deposited. Then, a solar cell was manufactured by heat treatment at 200° C. for 2 hours. Characteristics of solar cells: 200a+W under optimal load conditions
/cm2 x Characteristics after 40 hours light irradiation test, 230'
AM-1100mW/C characteristics after CX 6 hour heating test
Measured using a solar simulator 1112. The results are shown in Table 1. Comparative Example 1 A solar cell was produced in the same manner as in Example 1, except that the thickness of one layer was 6000 mm, no silicide layer was provided, and aluminum 2000 mm was used for the back electrode, and the characteristics of the obtained solar cell were It was measured. Thereafter, the characteristics after the same test as in Example 1 were measured. The results are shown in Table 1. [Margin below] Note that the performances in Table 1 are shown as relative values based on the initial values of Example 1.
本発明の太陽電池は、
（１）ｉ層を５００〜４０００人と薄くすることにより
光劣化を大幅に減少させることができる
（２）高反射率の金属からなる裏面電極を用いているの
で、１層を薄くすることによる活性層の光吸収量の低下
を裏面反射光を有効利用することで充分補うことができ
る
（３）半導体層と裏面電極との間に透光性のシリサイド
層を設け、裏面電極の高反射性をそこなうことなく、裏
面電極を形成する金属の半導体中への拡散を防止するこ
とができるので耐熱性に優れている
（４）前記シリサイド層は極めて簡単に形成でき、品質
のバラツキも少ないため容易に製造できるなどの特徴を
有するものである。The solar cell of the present invention has the following features: (1) By making the i-layer thinner by 500 to 4,000 people, photodeterioration can be significantly reduced. (2) Since the back electrode is made of a highly reflective metal, The decrease in light absorption of the active layer due to thinning of one layer can be sufficiently compensated for by effectively utilizing light reflected from the back surface. (3) A transparent silicide layer is provided between the semiconductor layer and the back electrode. (4) The silicide layer can be formed extremely easily, since it can prevent the metal forming the back electrode from diffusing into the semiconductor without impairing the high reflectivity of the back electrode. It has the characteristics that it can be easily manufactured because there is little variation in quality.
第１図は透明基板として透明電極側に凹凸を有するもの
を用いたばあいにえられる本発明の太陽電池の一実施態
様に関する説明図、第２図は第１図に示す透明基板の透
明電極側のかわりに透明電極の半導体側に凹凸を有する
ものを用いたばあいにえられる本発明の太陽電池の一実
施態様に関する説明図である。
（図面の主要符号）
（１）：透明基板
（３）：透明電極
（４）二手導体
（５）：シリサイド層
（６）：裏面電極FIG. 1 is an explanatory diagram of an embodiment of the solar cell of the present invention obtained when a transparent substrate having unevenness on the transparent electrode side is used, and FIG. 2 is an explanatory diagram of the transparent electrode of the transparent substrate shown in FIG. 1. FIG. 4 is an explanatory diagram of an embodiment of the solar cell of the present invention obtained when a transparent electrode having irregularities on the semiconductor side instead of the semiconductor side is used. (Main symbols in the drawing) (1): Transparent substrate (3): Transparent electrode (4) Two-handed conductor (5): Silicide layer (6): Back electrode
Claims (1)
基板上に設けられた太陽電池において、該半導体層の実
質的に真性な層の厚さが５００〜４０００Åであり、裏
面電極と最も裏面電極側の半導体層との間に透光性のシ
リサイド層を設け、該裏面電極が波長０．６μｍ以上の
光に対する反射率が８０％以上の値を有する金属から形
成されていることを特徴とする非晶質を含む薄膜半導体
系太陽電池。 ２ 前記半導体層がヘテロ接合構造を有する特許請求の
範囲第１項記載の太陽電池。 ３ 少なくともシリサイド層と接する前記半導体層がマ
イクロクリスタリンアモルファスシリコンからなる特許
請求の範囲第１項記載の太陽電池。 ４ 前記シリサイド層がＭｇ、Ｓｒ、Ｂａ、Ｔｉ、Ｚｒ
、Ｈｆ、Ｖ、Ｎｂ、Ｔａ、Ｃｒ、Ｈｏ、Ｗ、Ｍｎ、Ｒｅ
、Ｆｅ、Ｒｕ、Ｏｓ、Ｃｏ、Ｉｒ、Ｎｉ、ＰｂまたはＰ
ｔのシリサイドからなる特許請求の範囲第１項記載の太
陽電池。 ５ 前記裏面電極がＡｇ、Ａｕ、Ｃｕからなる特許請求
の範囲第１項記載の太陽電池。[Scope of Claims] 1. A solar cell in which a thin film semiconductor layer containing an amorphous substance having a photoelectric conversion function is provided on a substrate, wherein the substantially intrinsic layer of the semiconductor layer has a thickness of 500 to 4000 Å. , a light-transmitting silicide layer is provided between the back electrode and the semiconductor layer closest to the back electrode, and the back electrode is formed from a metal having a reflectance of 80% or more for light with a wavelength of 0.6 μm or more. A thin film semiconductor solar cell containing amorphous material. 2. The solar cell according to claim 1, wherein the semiconductor layer has a heterojunction structure. 3. The solar cell according to claim 1, wherein the semiconductor layer in contact with at least the silicide layer is made of microcrystalline amorphous silicon. 4 The silicide layer is Mg, Sr, Ba, Ti, Zr
, Hf, V, Nb, Ta, Cr, Ho, W, Mn, Re
, Fe, Ru, Os, Co, Ir, Ni, Pb or P
2. The solar cell according to claim 1, comprising t silicide. 5. The solar cell according to claim 1, wherein the back electrode is made of Ag, Au, or Cu.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60053563A JPS61212070A (en) | 1985-03-18 | 1985-03-18 | Thin film semiconductor solar cell containing amorphous material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60053563A JPS61212070A (en) | 1985-03-18 | 1985-03-18 | Thin film semiconductor solar cell containing amorphous material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61212070A true JPS61212070A (en) | 1986-09-20 |
| JPH0564868B2 JPH0564868B2 (en) | 1993-09-16 |
Family
ID=12946284
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60053563A Granted JPS61212070A (en) | 1985-03-18 | 1985-03-18 | Thin film semiconductor solar cell containing amorphous material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61212070A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0273672A (en) * | 1988-09-08 | 1990-03-13 | Fuji Electric Corp Res & Dev Ltd | Film photoelectric transfer element |
| KR20000052280A (en) * | 1999-01-18 | 2000-08-16 | 마스다 노부유키 | Amorphous silicon solar cell |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002261302A (en) * | 2001-02-28 | 2002-09-13 | Kyocera Corp | THIN-FILM CRYSTALLINE Si SOLAR CELL |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59104184A (en) * | 1982-11-19 | 1984-06-15 | シ−メンス，アクチエンゲゼルシヤフト | Solar battery |
| JPS59107580A (en) * | 1982-12-11 | 1984-06-21 | Semiconductor Energy Lab Co Ltd | Photoelectric conversion semiconductor device |
| JPS59147469A (en) * | 1983-02-14 | 1984-08-23 | Hitachi Ltd | Amorphous silicon solar cell |
| JPS59154081A (en) * | 1983-02-22 | 1984-09-03 | Unitika Ltd | Solar battery |
| JPS59177974A (en) * | 1983-03-28 | 1984-10-08 | Nippon Denso Co Ltd | Amorphous silicon group semiconductor element |
-
1985
- 1985-03-18 JP JP60053563A patent/JPS61212070A/en active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59104184A (en) * | 1982-11-19 | 1984-06-15 | シ−メンス，アクチエンゲゼルシヤフト | Solar battery |
| JPS59107580A (en) * | 1982-12-11 | 1984-06-21 | Semiconductor Energy Lab Co Ltd | Photoelectric conversion semiconductor device |
| JPS59147469A (en) * | 1983-02-14 | 1984-08-23 | Hitachi Ltd | Amorphous silicon solar cell |
| JPS59154081A (en) * | 1983-02-22 | 1984-09-03 | Unitika Ltd | Solar battery |
| JPS59177974A (en) * | 1983-03-28 | 1984-10-08 | Nippon Denso Co Ltd | Amorphous silicon group semiconductor element |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0273672A (en) * | 1988-09-08 | 1990-03-13 | Fuji Electric Corp Res & Dev Ltd | Film photoelectric transfer element |
| KR20000052280A (en) * | 1999-01-18 | 2000-08-16 | 마스다 노부유키 | Amorphous silicon solar cell |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0564868B2 (en) | 1993-09-16 |
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