JPS6120770Y2 - - Google Patents
Info
- Publication number
- JPS6120770Y2 JPS6120770Y2 JP1981026696U JP2669681U JPS6120770Y2 JP S6120770 Y2 JPS6120770 Y2 JP S6120770Y2 JP 1981026696 U JP1981026696 U JP 1981026696U JP 2669681 U JP2669681 U JP 2669681U JP S6120770 Y2 JPS6120770 Y2 JP S6120770Y2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- lead frame
- semiconductor device
- resin
- mounting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 34
- 239000011347 resin Substances 0.000 claims description 11
- 229920005989 resin Polymers 0.000 claims description 11
- 238000007747 plating Methods 0.000 claims description 7
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 239000002184 metal Substances 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
【考案の詳細な説明】
本考案は従来に比べて小型化された樹脂封止タ
イプの半導体装置に関するものである。[Detailed Description of the Invention] The present invention relates to a resin-sealed type semiconductor device that is smaller than the conventional one.
従来の一般的な樹脂封止タイプの半導体装置は
第１図の断面図に示すような構造であつた。すな
わち、半導体素子１が金属よりなる搭載部２上に
搭載され、同様に金属よりなるリードフレーム３
にワイヤー４を各して導通され、樹脂５により封
止されていた。そしてリードフレーム３の一端を
樹脂部５の外部に露出させ、その外部リードを介
して外部の回路に導通させていた。 A conventional general resin-sealed type semiconductor device had a structure as shown in the cross-sectional view of FIG. That is, a semiconductor element 1 is mounted on a mounting part 2 made of metal, and a lead frame 3 also made of metal.
The wires 4 were electrically connected to each other and sealed with resin 5. One end of the lead frame 3 was exposed to the outside of the resin part 5, and electrically connected to an external circuit via the external lead.
この様な構造の半導体装置は、装置自体が大き
く、また半導体素子１から発生する熱の放熱性が
悪いという欠点があつた。 A semiconductor device having such a structure has disadvantages in that the device itself is large and the heat generated from the semiconductor element 1 is poorly dissipated.
そこで、本考案は上記欠点を除去することを目
的とし、その特徴は、半導体素子１と、該半導体
素子１が搭載される搭載部１２と、該半導体素子
１に導通する複数のリードフレーム部１３と、該
搭載部１２及びリードフレーム部１３の該半導体
素子１が搭載されている表面側に設けられ半導体
素子を被覆する樹脂部とを有し、該搭載部及び該
リードフレーム部の裏面側が露出され、該リード
フレーム部の裏面側において周辺部が高く中央部
が低くなるように段差が形成され、該周辺部にメ
ツキ層が形成されてなることにある。 Therefore, the present invention aims to eliminate the above-mentioned drawbacks, and its features include a semiconductor element 1, a mounting part 12 on which the semiconductor element 1 is mounted, and a plurality of lead frame parts 13 electrically connected to the semiconductor element 1. and a resin part provided on the front side of the mounting part 12 and the lead frame part 13 on which the semiconductor element 1 is mounted and covering the semiconductor element, and the back side of the mounting part and the lead frame part are exposed. A step is formed on the back side of the lead frame portion so that the peripheral portion is high and the central portion is low, and a plating layer is formed on the peripheral portion.
以下本考案の一実施例を図面に従つて詳細に説
明する。 An embodiment of the present invention will be described in detail below with reference to the drawings.
第４図は本考案に関係する半導体装置の断面図
である。この半導体装置では、半導体素子１及び
ワイヤー４を被覆する樹脂部１５が、搭載部１２
及びリードフレーム部１３の表面側に設けられ、
裏面側は露出されている。特にリードフレーム部
１３は、裏面と側面が露出され、そこにメツキ層
または半田揚げ１６が形成されて外部回路と導通
される。 FIG. 4 is a sectional view of a semiconductor device related to the present invention. In this semiconductor device, the resin part 15 covering the semiconductor element 1 and the wire 4 is attached to the mounting part 12.
and provided on the front side of the lead frame part 13,
The back side is exposed. In particular, the back and side surfaces of the lead frame section 13 are exposed, and a plating layer or a solder fried layer 16 is formed thereon so as to be electrically connected to an external circuit.
第２図及び第３図は、第４図の半導体装置の製
造工程を示す平面図及び断面図である。まず第２
図の様な搭載部１２とリードフレーム部１３とが
枠１４と共に一枚の金属板より形成される。そし
て搭載部１２上に半導体素子１を搭載し、ワイヤ
ー４によりリードフレーム部１３と導通せしめた
後、第２図の破線部１５′の部分に樹脂部１５を
形成する。第３図はその断面図で、樹脂部１５は
表面側にのみ形成され、リードフレーム部１３と
搭載部１２の裏面は露出される。そして枠１４を
切断して分離した後、リードフレーム部１３の露
出せる裏面及び側面に対してメツキ１６を施こ
す。 2 and 3 are a plan view and a cross-sectional view showing the manufacturing process of the semiconductor device shown in FIG. 4. First, the second
A mounting portion 12 and a lead frame portion 13 as shown in the figure are formed from a single metal plate together with a frame 14. After the semiconductor element 1 is mounted on the mounting portion 12 and electrically connected to the lead frame portion 13 using the wire 4, the resin portion 15 is formed at the portion indicated by the broken line 15' in FIG. FIG. 3 is a cross-sectional view thereof, in which the resin portion 15 is formed only on the front side, and the back surfaces of the lead frame portion 13 and the mounting portion 12 are exposed. After cutting and separating the frame 14, plating 16 is applied to the exposed back and side surfaces of the lead frame portion 13.
この半導体装置では、半導体素子１を被覆する
樹脂部１５が必要最小限の部分にのみ設けられて
いるので、装置全体のサイズが小さくなつてい
る。また搭載部１２の裏面が露出されているの
で、半導体素子１で発生する熱は、搭載部１２を
介して効率的に放射され、放熱効果が大幅に改善
される。 In this semiconductor device, the resin portion 15 covering the semiconductor element 1 is provided only in the minimum necessary portion, so the size of the entire device is reduced. Furthermore, since the back surface of the mounting section 12 is exposed, the heat generated in the semiconductor element 1 is efficiently radiated through the mounting section 12, and the heat dissipation effect is greatly improved.
第５図は本考案の実施例の半導体装置の断面図
で、上記第４図の半導体装置と異なる点は、樹脂
部１５の樹脂が、リードフレーム部１３の露出し
ている部分に流れてこないように、リードフレー
ム部１３の中央部及び搭載部１２をリードフレー
ム部の周辺部より薄くしている（図中１７）。リ
ードフレーム部の裏面側では、周辺部で高く中央
部で低くなるように段差が形成され、周辺部にメ
ツキ層が設けられる。ここで、メツキ層は段差に
より止められ中央部までつたわることなく、中央
部において隣り合うリードフレーム間がメツキで
短絡するのを防ぐことができる。 FIG. 5 is a sectional view of a semiconductor device according to an embodiment of the present invention, which differs from the semiconductor device shown in FIG. 4 above in that the resin in the resin portion 15 does not flow into the exposed portion of the lead frame portion 13 As such, the central portion of the lead frame portion 13 and the mounting portion 12 are made thinner than the peripheral portion of the lead frame portion (17 in the figure). On the back side of the lead frame section, a step is formed such that it is higher at the periphery and lower at the center, and a plating layer is provided at the periphery. Here, the plating layer is stopped by the step and does not extend all the way to the center, thereby preventing a short circuit between adjacent lead frames at the center due to the plating.
以上説明したように本考案によれば、小型で熱
放散の良好な半導体装置を提供することができ
る。 As explained above, according to the present invention, it is possible to provide a compact semiconductor device with good heat dissipation.
第１図は従来の一般的な樹脂封止タイプの半導
体装置の断面図、第２図及び第３図は本考案に関
係する半導体装置の製造工程を説明するための平
面図及び断面図、第４図は本考案に関係する半導
体装置の断面図、第５図は本考案の実施例の半導
体装置の断面図である。
図中、１……半導体素子、１２……搭載部、１
３……リードフレーム部、１５……樹脂部。
FIG. 1 is a cross-sectional view of a conventional general resin-sealed type semiconductor device; FIGS. 2 and 3 are a plan view and a cross-sectional view for explaining the manufacturing process of a semiconductor device related to the present invention; FIG. 4 is a cross-sectional view of a semiconductor device related to the present invention, and FIG. 5 is a cross-sectional view of a semiconductor device according to an embodiment of the present invention. In the figure, 1...semiconductor element, 12... mounting section, 1
3...Lead frame part, 15...Resin part.
Claims (1)
部と、 該搭載部及びリードフレーム部の該半導体素子
が搭載されている表面側に設けられ該半導体素子
を被覆する樹脂部とを有し、 該搭載部及びリードフレーム部の裏面側が露出
され、 該リードフレーム部の裏面側において周辺部が
高く中央部が低くなるように段差が形成され、 該周辺部にメツキ層が形成されてなることを特
徴とする半導体装置。[Claims for Utility Model Registration] A semiconductor element, a mounting part on which the semiconductor element is mounted, a plurality of lead frame parts electrically connected to the semiconductor element, and a semiconductor element in the mounting part and the lead frame part on which the semiconductor element is mounted. a resin part provided on the front surface side of the semiconductor element and covering the semiconductor element, the back side of the mounting part and the lead frame part are exposed, and the peripheral part is high and the central part is low on the back side of the lead frame part. What is claimed is: 1. A semiconductor device comprising: a step formed therein; and a plating layer formed around the periphery.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1981026696U JPS6120770Y2 (en) | 1981-02-26 | 1981-02-26 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1981026696U JPS6120770Y2 (en) | 1981-02-26 | 1981-02-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57140745U JPS57140745U (en) | 1982-09-03 |
| JPS6120770Y2 true JPS6120770Y2 (en) | 1986-06-21 |
Family
ID=29824416
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1981026696U Expired JPS6120770Y2 (en) | 1981-02-26 | 1981-02-26 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6120770Y2 (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5636145A (en) * | 1979-08-31 | 1981-04-09 | Hitachi Ltd | Thin semiconductor integrated circuit device and its manufacture |
-
1981
- 1981-02-26 JP JP1981026696U patent/JPS6120770Y2/ja not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5636145A (en) * | 1979-08-31 | 1981-04-09 | Hitachi Ltd | Thin semiconductor integrated circuit device and its manufacture |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57140745U (en) | 1982-09-03 |
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