JPS61207085A - Optical semiconductor device - Google Patents

Optical semiconductor device

Info

Publication number
JPS61207085A
JPS61207085A JP60047763A JP4776385A JPS61207085A JP S61207085 A JPS61207085 A JP S61207085A JP 60047763 A JP60047763 A JP 60047763A JP 4776385 A JP4776385 A JP 4776385A JP S61207085 A JPS61207085 A JP S61207085A
Authority
JP
Japan
Prior art keywords
pellet
led
side lead
groove
optical semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60047763A
Other languages
Japanese (ja)
Inventor
Yasuo Yamazaki
康雄 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP60047763A priority Critical patent/JPS61207085A/en
Publication of JPS61207085A publication Critical patent/JPS61207085A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/4823—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a pin of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To prevent the disconnection of wiring and the deterioration of a pellet and to improve the optical output, by providing a groove shaped into an inverted frustum of cone around the pellet, filling the groove with an insulator layer and forming a conductive layer on the insulator layer. CONSTITUTION:A pellet-side lead 22 and a post-side lead 23 are drawn out of a housing 21. A groove 24 shaped into an inverted frustum of cone 24 is formed in the housing 21 to be located on the mounting face 22a of the pellet- side lead 22, and an LED pellet 26 is mounted on the mounting face 22a in the groove 24 through silver paste 25. The LED pellet 26 is provided with electrodes 26a on its side faces. The peripheral space of the LED pellet 26 is filled with an insulating member such as epoxy resin 27, and a conductive resin layer 28 is formed thereover to connect the electrode 26a to the post-side lead 23. Another enclosure 29 of epoxy resin is arranged on the enclosure so that the LED pellet 26 is sealed.

Description

【発明の詳細な説明】 ［発明の技術分野］ 本発明は発光表示装置の光源及びセンサ等に用いられる
光半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an optical semiconductor device used as a light source, sensor, etc. of a light emitting display device.

［発明の技術的背景］ 従来、この種の発光装置（ＬＥＤ）の内部構造は例えば
第１図に示すような構造となっている。[Technical Background of the Invention] Conventionally, the internal structure of this type of light emitting device (LED) is as shown in FIG. 1, for example.

同図に於いて、セラミック樹脂の外囲器１１からはポス
ト側リード１２及びベレット側リード１３が導出され、
このペレット側リード１３上には銀ペースト１４により
第４図に拡大して示すＬＥＤベレット１５がマウントさ
れている。このＬＥＤペレット１５のポンディングパッ
ド１６は例えば金Ａｕのボンディングワイヤ１７を介し
てポスト側リード１３に接続されている。ＬＥＤペレッ
ト１５及びボンディングワイヤ１７はエポキシ樹脂によ
る外囲器１８により封止されている。In the figure, a post side lead 12 and a bullet side lead 13 are led out from a ceramic resin envelope 11.
On this pellet-side lead 13, an LED pellet 15, shown enlarged in FIG. 4, is mounted with silver paste 14. The bonding pad 16 of this LED pellet 15 is connected to the post-side lead 13 via a bonding wire 17 made of, for example, gold Au. The LED pellet 15 and bonding wire 17 are sealed with an envelope 18 made of epoxy resin.

［背景技術の問題点］ しかしながら、上記のような従来の発光素子にあっては
、次のような問題があった。[Problems with Background Art] However, the conventional light emitting device as described above has the following problems.

＜１）　　ＬＥＤペレット１５の電極導出手段としてボ
ンディングワイヤ１７を使用しているため、外部の熱ス
トレスがかかった場合、ボンディングワイヤ１７に異常
ストレスがかかり、弱い部分から断線することがおる。<1) Since the bonding wire 17 is used as an electrode lead-out means of the LED pellet 15, when external thermal stress is applied, abnormal stress is applied to the bonding wire 17, and the wire may break at a weak point.

（２）従来のＬＥＤペレット１５に於いては、ボンディ
ングワイヤ１７でＬＥＤベレット表面にボールを作り、
超音波で熱圧着してリード１１と接続していたため、Ｌ
ＥＤペレット１５の内部にストレスが残り、これが光出
力低下の原因となっていた。(2) In the conventional LED pellet 15, a ball is made on the surface of the LED pellet with the bonding wire 17,
Because it was connected to lead 11 by thermocompression using ultrasonic waves, L
Stress remained inside the ED pellet 15, which caused a decrease in optical output.

（ａ　ボンディングワイヤ１７を使用するため、ＬＥＤ
ペレット１５の表面に電極（ポンディングパッド）が必
要であるが、電極が光の出口を塞いでいるため、光出力
が低い。(a) Since the bonding wire 17 is used, the LED
Although an electrode (ponding pad) is required on the surface of the pellet 15, the light output is low because the electrode blocks the light exit.

［発明の目的］ 本考案は上記実情に鑑みてなざ践たもので、その目的は
、ボンディングワイヤの断線等の問題が無くなると共に
、ペレットの劣化を防止し、かつ光出力を向上させるこ
とのできる光半導体装置を提供することにある。[Purpose of the Invention] The present invention was developed in view of the above-mentioned circumstances, and its purpose is to eliminate problems such as disconnection of bonding wires, prevent pellet deterioration, and improve optical output. The purpose of the present invention is to provide an optical semiconductor device that can be used.

［発明の概要］ 本発明は、ＬＥＤベレットがマウントされるペレット側
リード、及びポスト側リードが導出される外囲器の当該
ペレットの周囲に逆円錐台状の溝部を設け、この溝部内
に絶縁物層を埋め込み、さらにこの絶縁物層上に導電性
層を形成し、この導電性層により前記ＬＥＤペレットの
電極とポスト側リードとを接続するものである。[Summary of the Invention] The present invention provides an inverted truncated conical groove around the pellet of the pellet-side lead on which the LED pellet is mounted and the envelope from which the post-side lead is led out, and insulates the inside of the groove. A conductive layer is further formed on this insulating layer, and the electrode of the LED pellet and the post-side lead are connected by this conductive layer.

このような構成により、従来のようなホンディングワイ
ヤが不要となり、断線等の恐れがなくなると共に、前記
ＬＥＤペレットの電極を側面部に設けることにより、発
光出力が向上する。Such a configuration eliminates the need for a conventional bonding wire, eliminates the risk of wire breakage, and improves the light emitting output by providing the electrodes of the LED pellet on the side surface.

［発明の実施例］ 以下、図面を参照して本発明の一実施例を説明する。第
１図に於いて、２１はセラミック樹脂からなる外囲器で
あり、この外囲器２１からはペレット側リード２２及び
ポスト側リード２３が導出されている。ペレット側リー
ド２２のマウント面２２ａ上部の外囲器２１には逆円錐
台状の溝２４が形成され、この溝２４内に於いてマウン
ト面２２ａには銀ペースト２５を介してＬＥＤペレット
２６がマウントされている。[Embodiment of the Invention] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In FIG. 1, 21 is an envelope made of ceramic resin, and a pellet side lead 22 and a post side lead 23 are led out from this envelope 21. An inverted truncated conical groove 24 is formed in the envelope 21 above the mounting surface 22a of the pellet side lead 22, and an LED pellet 26 is mounted on the mounting surface 22a within this groove 24 via a silver paste 25. has been done.

このＬＥＤベレット２６は第２図に拡大して示すように
、表面の電極２６ａが側面部に形成されている。As shown in an enlarged view in FIG. 2, this LED pellet 26 has a surface electrode 26a formed on a side surface.

ＬＥＤベレット２６の周囲には絶縁部材、例えばエポキ
シ樹脂２７が埋込まれ、このエポキシ樹脂２７上にＬＥ
Ｄペレット２６の電極２６ａとポスト側リード２３とを
接続するように導電性樹脂層２８が形成されている。さ
らに、外囲器２１上にはエポキシ樹脂からなる外囲器２
９が設けられ、これによりＬＥＤペレット２６を封止し
ている。An insulating member, for example, an epoxy resin 27 is embedded around the LED pellet 26, and the LED
A conductive resin layer 28 is formed to connect the electrode 26a of the D pellet 26 and the post-side lead 23. Furthermore, an envelope 2 made of epoxy resin is placed on the envelope 21.
9 is provided, thereby sealing the LED pellet 26.

上記のように本発明に於いては、導電性樹脂層２Ｂによ
りＬＥＤベレット２６の電極２６ａとポスト側リード２
３とを接続するようにしたので、（１）従来のようなボ
ンディングワイヤによるボンディング工程が不要である
。従って、これに伴うボンディング不良がなくなり、重
要特性である信頼性（半田浸加熱、温度サイクル試験）
が大幅に向上する。As described above, in the present invention, the electrode 26a of the LED pellet 26 and the post side lead 2 are connected by the conductive resin layer 2B.
(1) There is no need for the conventional bonding process using bonding wires. Therefore, bonding defects associated with this are eliminated, and reliability, which is an important characteristic (solder immersion heat, temperature cycle test), is eliminated.
is significantly improved.

（３）ＬＥＤペレット２６の電極２６ａを側面部に設け
ることにより、従来のような表面電極の形成が不要とな
り、このため工程を大幅に短縮しかつ価格を低下させる
ことができる。(3) By providing the electrode 26a of the LED pellet 26 on the side surface, there is no need to form a surface electrode as in the conventional method, and therefore the process can be significantly shortened and the cost can be reduced.

（３ＬＥＤベレツト２５の表面電極をなくすことができ
るため、発光出力が大幅に向上する。(Since the surface electrode of the 3-LED beret 25 can be eliminated, the light emission output is greatly improved.

［発明の効果］ 以上のように本発明によれば、ボンディングワイヤの断
線の心配がなくなると共に、ペレットの劣化を防止する
ことができ、かつ光出力を向上させることのできる光半
導体装置を提供できる。[Effects of the Invention] As described above, according to the present invention, it is possible to provide an optical semiconductor device that eliminates the fear of bonding wire breakage, prevents pellet deterioration, and improves optical output. .

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明の一実施例に係る光半導体装置の構造を
示す断面図、第２図は第１図の装置に用いられるＬＥＤ
ペレットを示す断面図、第３図は従来の光半導体装置の
構造を示す断面図、第４図は第３図の装置に用いられる
ＬＥＤペレットを示す断面図である。 ２１、２９・・・外囲器、２２・・・ベレット側リード
、２３・・・ポスト側リード、２４・・・溝、２６・・
・ＬＥＤベレット、２６ａ・・・電極、２７・・・エポ
キシ樹脂、２８・・・導電性樹脂層。FIG. 1 is a sectional view showing the structure of an optical semiconductor device according to an embodiment of the present invention, and FIG. 2 is an LED used in the device shown in FIG.
FIG. 3 is a cross-sectional view showing the structure of a conventional optical semiconductor device, and FIG. 4 is a cross-sectional view showing the LED pellet used in the device of FIG. 3. 21, 29...Envelope, 22...Bellet side lead, 23...Post side lead, 24...Groove, 26...
- LED pellet, 26a... Electrode, 27... Epoxy resin, 28... Conductive resin layer.

Claims (1)

【特許請求の範囲】[Claims] 　第１の外囲器と、この外囲器から導出された第１及び
第２のリードと、前記第１のリード上に一方の電極が接
続された光半導体素子と、前記第１の外囲器の前記光半
導体素子の周囲に設けられた溝部と、この溝部内に形成
された絶縁物層と、この絶縁物層上に設けられ、前記光
半導体素子の他方の電極と前記第２のリードとを接続す
る導電性層と、前記第１の外囲器上に設けられ、前記光
半導体素子を封止する第２の外囲器とを具備したことを
特徴とする光半導体装置。a first envelope, first and second leads led out from the envelope, an optical semiconductor element with one electrode connected to the first lead, and the first envelope. a groove provided around the optical semiconductor element of the device, an insulating layer formed in the groove, and the other electrode of the optical semiconductor element and the second lead provided on the insulating layer. An optical semiconductor device comprising: a conductive layer that connects the optical semiconductor device; and a second envelope that is provided on the first envelope and seals the optical semiconductor element.
JP60047763A 1985-03-11 1985-03-11 Optical semiconductor device Pending JPS61207085A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60047763A JPS61207085A (en) 1985-03-11 1985-03-11 Optical semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60047763A JPS61207085A (en) 1985-03-11 1985-03-11 Optical semiconductor device

Publications (1)

Publication Number Publication Date
JPS61207085A true JPS61207085A (en) 1986-09-13

Family

ID=12784409

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60047763A Pending JPS61207085A (en) 1985-03-11 1985-03-11 Optical semiconductor device

Country Status (1)

Country Link
JP (1) JPS61207085A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4920404A (en) * 1989-05-12 1990-04-24 Hewlett-Packard Company Low stress light-emitting diode mounting package
JPH04114480A (en) * 1990-09-04 1992-04-15 Fuji Electric Co Ltd Optical sensor element and manufacture thereof
WO1995009444A1 (en) * 1993-09-30 1995-04-06 Universal Electronics Inc. Led assembly with enhanced power output
EP1318549A2 (en) * 2001-12-05 2003-06-11 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Process of manufacturing an optoelectronic semiconductor device
JP2009004502A (en) * 2007-06-20 2009-01-08 Oki Data Corp Semiconductor device and led print head

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4920404A (en) * 1989-05-12 1990-04-24 Hewlett-Packard Company Low stress light-emitting diode mounting package
JPH04114480A (en) * 1990-09-04 1992-04-15 Fuji Electric Co Ltd Optical sensor element and manufacture thereof
WO1995009444A1 (en) * 1993-09-30 1995-04-06 Universal Electronics Inc. Led assembly with enhanced power output
EP1318549A2 (en) * 2001-12-05 2003-06-11 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Process of manufacturing an optoelectronic semiconductor device
EP1318549A3 (en) * 2001-12-05 2009-04-29 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Process of manufacturing an optoelectronic semiconductor device
JP2009004502A (en) * 2007-06-20 2009-01-08 Oki Data Corp Semiconductor device and led print head

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