JPS61206224A - Resist coating device - Google Patents
Resist coating deviceInfo
- Publication number
- JPS61206224A JPS61206224A JP4702685A JP4702685A JPS61206224A JP S61206224 A JPS61206224 A JP S61206224A JP 4702685 A JP4702685 A JP 4702685A JP 4702685 A JP4702685 A JP 4702685A JP S61206224 A JPS61206224 A JP S61206224A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- semiconductor wafer
- nozzle
- wafer
- resist solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011248 coating agent Substances 0.000 title claims abstract description 27
- 238000000576 coating method Methods 0.000 title claims abstract description 27
- 239000004065 semiconductor Substances 0.000 claims abstract description 26
- 230000002093 peripheral effect Effects 0.000 claims abstract 2
- 239000007788 liquid Substances 0.000 claims description 15
- 239000002904 solvent Substances 0.000 abstract description 6
- 239000010409 thin film Substances 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 26
- 241000257465 Echinoidea Species 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 241000277269 Oncorhynchus masou Species 0.000 description 1
- 241001122767 Theaceae Species 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Coating Apparatus (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は半導体装置製造の際に用いられる半導体ウェ
ハへのレジスト塗布装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a resist coating apparatus for semiconductor wafers used in the manufacture of semiconductor devices.
従来例によるこの種のレジスト塗布装置の概要構成を第
６図に示す、この第６図において、レジスト塗布装置は
、スピンモータ１１と、シールハウジング１２内で適宜
シール部材１３を介し、上方に取出されるモータ軸１１
ａの端部に固着したチャック１４と、前記モータ軸１１
ａ内を通して、チャック１４に真空吸着作用を与えるた
めの２図示省略した真空吸引装置に連通する継手１５お
よび真空チューブ１６と、前記チャック１４の中心部上
方にあって、供給チューブ１８および継手１８を経て、
図示省略した供給装置から圧送されるレジスト液を噴出
滴下させる塗布ノズル２０とから構成されている。FIG. 6 shows a schematic configuration of a resist coating device of this kind according to a conventional example. In FIG. motor shaft 11
A chuck 14 fixed to the end of a and the motor shaft 11
a, a joint 15 and a vacuum tube 16 that communicate with two vacuum suction devices (not shown) for imparting a vacuum suction effect to the chuck 14, and a supply tube 18 and a joint 18 located above the center of the chuck 14. Through,
It is comprised of a coating nozzle 20 that jets and drops a resist liquid that is force-fed from a supply device (not shown).
そしてこの従来構成では、チャック！４上に真空吸着に
より半導体ウェハ２２を保持させておき、まずこの半導
体ウェハ２２の表面上に、第７図に示すように、塗布ノ
ズル２０からレジスト液を噴出滴下させる。そしてこの
ように滴下されたレジスト液２３は、その粘性による表
面張力によって、通常。And in this conventional configuration, Chuck! A semiconductor wafer 22 is held on the surface of the semiconductor wafer 22 by vacuum suction, and first, as shown in FIG. The resist liquid 23 dropped in this way is normally caused by surface tension due to its viscosity.
滴下中心でもある半導体ウェハ２２の表面中心に、中央
部で厚く１周辺部で薄く盛り上った状態になる。At the center of the surface of the semiconductor wafer 22, which is also the center of the dropping, the liquid is raised thickly at the center and thinly at one periphery.
ついでその後、スピンモータ１１により半導体ウェハ２
２を高速度で回転させることによって、この半導体ウェ
ハ２２上のレジスト液２３が、第８図に示すように、遠
心力で薄膜状に均一に引き延ばされると共に、同レジス
ト液２３中の溶剤成分が揮発して、その感光成分のみが
半導体ウェハ２２上の全面に均一な厚さで塗布されるの
である。Thereafter, the semiconductor wafer 2 is rotated by the spin motor 11.
2 at a high speed, the resist solution 23 on the semiconductor wafer 22 is uniformly stretched into a thin film by centrifugal force as shown in FIG. 8, and the solvent components in the resist solution 23 are is volatilized, and only the photosensitive component is applied to the entire surface of the semiconductor wafer 22 with a uniform thickness.
しかしながら前記従来例によるレジスト塗布装置におい
ては、近年での半導体ウェハの大口径化に伴なって１次
のような欠点を生ずることが明らかになってきた。すな
わち、レジスト液が半導体ウェハの中央部に盛り上って
滴下されるために、大口径ウェハの場合には、回転遠心
力によるレジスト液の引き延ばしに際して、第９図に示
す通りに、レジスト液がウニへの最外縁部に到達する以
前に、その溶剤成分が揮発してしまい、大口径ウェハの
全面に均一な厚さで塗布されず、また塗布むらを生ずる
などの慣れがあった。However, it has become clear that the conventional resist coating apparatus described above suffers from first-order defects as semiconductor wafers have become larger in diameter in recent years. That is, since the resist solution bulges up in the center of the semiconductor wafer and is dropped, in the case of large-diameter wafers, when the resist solution is stretched by rotational centrifugal force, the resist solution spreads as shown in FIG. Before reaching the outermost edge of the sea urchin, the solvent components evaporate and the entire surface of a large diameter wafer is not coated with a uniform thickness, resulting in uneven coating.
この発明は従来例装置でのこのような欠点を改善しよう
とするもので、塗布対象が大口径の半導体ウェハであっ
ても、レジストをその全面に均一な厚さで塗布し得るレ
ジスト塗布装置を提供することを目的とする。The present invention aims to improve the above-mentioned drawbacks of the conventional apparatus, and provides a resist coating apparatus that can coat the entire surface of a semiconductor wafer with a uniform thickness even if the coating target is a large-diameter semiconductor wafer. The purpose is to provide.
前記目的を達成するために、この発明に係るレジスト塗
布装置は、塗布ノズルでの複数のノズル開口の形状、配
置を、半導体ウェハの表面上で、滴下されるレジスト液
の分布が、面状の拡がりになるように構成したものであ
る。In order to achieve the above object, the resist coating apparatus according to the present invention changes the shape and arrangement of the plurality of nozzle openings in the coating nozzle so that the distribution of the resist liquid dropped on the surface of the semiconductor wafer is planar. It is designed to expand.
従ってこの発明装置の場合には、大口径ウェハの表面上
に滴下されるレジスト液の分布を調整することができて
、同ウェハの表面上にレジスト液を全面に亘り、均一に
塗布し得るのである。Therefore, in the case of the apparatus of this invention, the distribution of the resist liquid dropped onto the surface of a large-diameter wafer can be adjusted, and the resist liquid can be applied uniformly over the entire surface of the wafer. be.
以下この発明に係るレジスト塗布装置の一実施例につき
、第１図ないし第５図を参照して詳細に説明する。Hereinafter, one embodiment of the resist coating apparatus according to the present invention will be described in detail with reference to FIGS. 1 to 5.
第１図実施例装置は前記第６図従来例装置に対応して表
わした概要構成であって、これらの各図中、同一符号は
同一または相当部分を示し、この実施例においては、塗
布ノズル１７として、第２図（ａ）、（ｂ）に示す通り
、レジスト液２３を面状の拡がりで、大口径の半導体ウ
ェハ２１の表面上に滴下し得るように、ノズル面で複数
のノズル開口１７ａを形成させたものである。The apparatus of the embodiment shown in FIG. 1 has a schematic configuration corresponding to the conventional apparatus shown in FIG. 17, as shown in FIGS. 2(a) and 2(b), a plurality of nozzle openings are provided on the nozzle surface so that the resist liquid 23 can be dropped onto the surface of the large-diameter semiconductor wafer 21 in a planar manner. 17a is formed.
こ−で前記各ノズル開口１７ａの形状ならびに分布とし
ては、適用するレジスト液２３の性状とか、大口径ウェ
ハ２１の処理条件などに対応して適宜に選択してよいが
、この実施例装置の場合、具体的には、同第２図（ｂ）
で明らかなように、同一口径のノズル開口ｔｅａの複数
を、ノズル面で中央部分が疎１周辺部分が密−になるよ
うに分布配置させた構成にしである。Here, the shape and distribution of each nozzle opening 17a may be appropriately selected depending on the properties of the resist liquid 23 to be applied, the processing conditions of the large-diameter wafer 21, etc., but in the case of the apparatus of this embodiment, , specifically, as shown in Figure 2(b).
As is clear from the above, a plurality of nozzle openings tea having the same diameter are arranged in such a manner that they are sparse in the center and dense in the periphery on the nozzle surface.
従って前記第２図（ａ）、（ｂ）に示すところの、この
実施例装置による塗布ノズル１７を用いた場合には、各
ノズル開口１７ａから滴下されたレジスト液２３は、第
３図に見られるように、大口径ウェハ２１の表面上にあ
って、該当範囲内で均一な厚さの面状に拡がり、その後
の大口径ウェハ２１に対する高速回転処理によって、ウ
ェハ２１上のレジスト液２３は、第４図に示す通り、溶
剤成分が揮発する以前に１回転遠心力で外縁部に至る全
面に亘って、薄膜状に均一に引き延ばされ、かつ溶剤成
分が揮発して、感光成分のみが均一な厚さで塗布される
のである。Therefore, when the coating nozzle 17 of this embodiment shown in FIGS. 2(a) and 2(b) is used, the resist liquid 23 dropped from each nozzle opening 17a as shown in FIG. As shown in FIG. As shown in Figure 4, before the solvent component volatilizes, it is uniformly stretched into a thin film over the entire surface up to the outer edge by one revolution of centrifugal force, and the solvent component volatilizes, leaving only the photosensitive component. It is applied to a uniform thickness.
なお、前記実施例装置においては、大口径ウェハ２１の
表面上でレジスト液２３が均一な厚さの面状に滴下され
るようにしているが、それぞれのノズル開口１７ａの形
状２分布の如何によっては、このウニ八表面上でのレジ
スト液２３を、第５図に示すように、中央部で薄く、周
縁部でや−厚くなるようにすることもできる。In the apparatus of the embodiment described above, the resist liquid 23 is dropped onto the surface of the large-diameter wafer 21 in a planar shape with a uniform thickness. Alternatively, the resist liquid 23 on the surface of the sea urchin can be made thinner at the center and slightly thicker at the periphery, as shown in FIG.
そしてまた前記実施例では、単一の塗布ノズル構成を用
いるようにしているが、複数の塗布ノズル構成を用いて
も同様な作用効果を得られることは勿論である。Further, in the above embodiment, a single coating nozzle configuration is used, but it goes without saying that similar effects can be obtained even if a plurality of coating nozzle configurations are used.
以上詳述したようにこの発明によれば、塗布ノズルでの
複数のノズル開口の形状、配置を、半導体ウェハの表面
上で、滴下されるレジスト液の分布が、面状の拡がりに
なるように構成したから、大口径の半導体ウェハにあっ
ても、レジスト液をその表面上の周縁部を含めた全面に
亘り、均一に塗布むらなどを生ずることなく塗布できて
、目的とする均一な厚さのレジスト薄膜を容易に形成し
得るものである。As detailed above, according to the present invention, the shape and arrangement of the plurality of nozzle openings in the coating nozzle are adjusted so that the distribution of the resist liquid dropped on the surface of the semiconductor wafer spreads over the surface of the semiconductor wafer. Because of this structure, even on large-diameter semiconductor wafers, the resist solution can be applied uniformly over the entire surface including the periphery without causing uneven coating, and the desired uniform thickness can be achieved. A thin resist film can be easily formed.
第１図はこの発明に係るレジスト塗布装置の一実施例に
よる概要構成を示す一部縦断正面図、第２図（ａ）、（
ｂ）は同上塗布ノズルの正面図およびノズル面図、第３
図は同上レジスト液の滴下状態を示す正面図、第４図は
同上レジスト塗布後の大口径半導体ウェハを示す正面図
、第５図は他の実施例によるレジスト液の滴下状態を示
す正面図であり、また第６図は従来例によるレジスト塗
布装置の概要構成を示す一部縦断正面図、第７図は同上
レジスト液の滴下状態を示す正面図、第８図および第９
図は同上レジスト塗布後の半導体ウェハおよび大口径半
導体ウェハを示すそれぞれ正面図である。
１１・・・・スピンモータ、１４・・・・チャック、１
７・・・・塗布ノズル、ｔ７ａ・・・・ノズル開口、２
！・・・・大口径ウェハ、２３・・・・レジスト液。
代理人 大 岩 増 雄
Ｐ寸ト
Ｐ ＦＦＰ＋
第３図
第４図
フ１
第７図
第８図
フ１FIG. 1 is a partially vertical front view showing a schematic configuration of an embodiment of a resist coating apparatus according to the present invention, and FIGS.
b) is a front view and a nozzle side view of the same coating nozzle as above;
FIG. 4 is a front view showing a large-diameter semiconductor wafer after applying the same resist solution as above, and FIG. 5 is a front view showing a state in which resist solution is dropped according to another embodiment. 6 is a partially longitudinal front view showing the general configuration of a conventional resist coating device, FIG. 7 is a front view showing the dripping state of the same resist solution, and FIGS. 8 and 9.
The figures are front views showing a semiconductor wafer and a large-diameter semiconductor wafer after applying the same resist as above. 11...Spin motor, 14...Chuck, 1
7... Application nozzle, t7a... Nozzle opening, 2
! ...Large diameter wafer, 23...Resist liquid. Agent Masu Oiwa P SuntoP FFP+ Figure 3 Figure 4 F1 Figure 7 Figure 8 F1
Claims (3)
液を滴下させると共に、同半導体ウェハを高速回転して
、滴下されたレジスト液を回転遠心力により同表面上に
塗布するレジスト塗布装置において、前記塗布ノズルで
の複数のノズル開口の形状、配置を、半導体ウェハの表
面上で、滴下されるレジスト液の分布が、面状の拡がり
になるように構成させたことを特徴とするレジスト塗布
装置。(1) A resist coating apparatus that drops a resist solution from a coating nozzle onto the surface of a semiconductor wafer, rotates the semiconductor wafer at high speed, and coats the dropped resist solution onto the surface using rotational centrifugal force. A resist coating apparatus characterized in that the shape and arrangement of a plurality of nozzle openings in a coating nozzle are configured so that the distribution of the resist liquid dropped onto the surface of a semiconductor wafer spreads out in a planar manner.
りになるようにしたことを特徴とする特許請求の範囲第
１項記載のレジスト塗布装置。(2) The resist coating device according to claim 1, wherein the resist solution to be dropped is distributed in a circular spread pattern.
周縁部で厚い円形面状の拡がりになるようにしたことを
特徴とする特許請求の範囲第１項記載のレジスト塗布装
置。(3) The distribution of the resist liquid dropped is thin in the center,
2. The resist coating device according to claim 1, wherein the resist coating device has a circular shape that is thick at the peripheral edge.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4702685A JPS61206224A (en) | 1985-03-08 | 1985-03-08 | Resist coating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4702685A JPS61206224A (en) | 1985-03-08 | 1985-03-08 | Resist coating device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61206224A true JPS61206224A (en) | 1986-09-12 |
Family
ID=12763661
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4702685A Pending JPS61206224A (en) | 1985-03-08 | 1985-03-08 | Resist coating device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61206224A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5472502A (en) * | 1993-08-30 | 1995-12-05 | Semiconductor Systems, Inc. | Apparatus and method for spin coating wafers and the like |
| US6977098B2 (en) | 1994-10-27 | 2005-12-20 | Asml Holding N.V. | Method of uniformly coating a substrate |
| US7018943B2 (en) | 1994-10-27 | 2006-03-28 | Asml Holding N.V. | Method of uniformly coating a substrate |
| US7030039B2 (en) | 1994-10-27 | 2006-04-18 | Asml Holding N.V. | Method of uniformly coating a substrate |
| JP2008041612A (en) * | 2006-08-10 | 2008-02-21 | Nec Personal Products Co Ltd | Code |
-
1985
- 1985-03-08 JP JP4702685A patent/JPS61206224A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5472502A (en) * | 1993-08-30 | 1995-12-05 | Semiconductor Systems, Inc. | Apparatus and method for spin coating wafers and the like |
| US6977098B2 (en) | 1994-10-27 | 2005-12-20 | Asml Holding N.V. | Method of uniformly coating a substrate |
| US7018943B2 (en) | 1994-10-27 | 2006-03-28 | Asml Holding N.V. | Method of uniformly coating a substrate |
| US7030039B2 (en) | 1994-10-27 | 2006-04-18 | Asml Holding N.V. | Method of uniformly coating a substrate |
| JP2008041612A (en) * | 2006-08-10 | 2008-02-21 | Nec Personal Products Co Ltd | Code |
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