JPS61200130A - Polymeric semiconductor - Google Patents
Polymeric semiconductorInfo
- Publication number
- JPS61200130A JPS61200130A JP60038666A JP3866685A JPS61200130A JP S61200130 A JPS61200130 A JP S61200130A JP 60038666 A JP60038666 A JP 60038666A JP 3866685 A JP3866685 A JP 3866685A JP S61200130 A JPS61200130 A JP S61200130A
- Authority
- JP
- Japan
- Prior art keywords
- copolymer
- polygermane
- polysilane
- polymeric semiconductor
- structural unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 229920001577 copolymer Polymers 0.000 claims abstract description 22
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims abstract description 4
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 3
- 229920000642 polymer Polymers 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 abstract description 2
- 229910000078 germane Inorganic materials 0.000 abstract description 2
- 150000004756 silanes Chemical class 0.000 abstract description 2
- 229910052708 sodium Inorganic materials 0.000 abstract description 2
- 239000011734 sodium Substances 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000003786 synthesis reaction Methods 0.000 description 6
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 229910052744 lithium Inorganic materials 0.000 description 5
- 238000006116 polymerization reaction Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229920000548 poly(silane) polymer Polymers 0.000 description 3
- 229920001197 polyacetylene Polymers 0.000 description 3
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- TXHIDIHEXDFONW-UHFFFAOYSA-N benzene;propan-2-one Chemical compound CC(C)=O.C1=CC=CC=C1 TXHIDIHEXDFONW-UHFFFAOYSA-N 0.000 description 2
- GNVPGBIHGALKRR-UHFFFAOYSA-N dichloro-methyl-propylsilane Chemical compound CCC[Si](C)(Cl)Cl GNVPGBIHGALKRR-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 238000001226 reprecipitation Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000001308 synthesis method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910017049 AsF5 Inorganic materials 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- 101000796022 Homo sapiens Thioredoxin-interacting protein Proteins 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 102100031344 Thioredoxin-interacting protein Human genes 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- YBGKQGSCGDNZIB-UHFFFAOYSA-N arsenic pentafluoride Chemical compound F[As](F)(F)(F)F YBGKQGSCGDNZIB-UHFFFAOYSA-N 0.000 description 1
- UHOVQNZJYSORNB-UHFFFAOYSA-N benzene Substances C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 1
- SLUNEGLMXGHOLY-UHFFFAOYSA-N benzene;hexane Chemical compound CCCCCC.C1=CC=CC=C1 SLUNEGLMXGHOLY-UHFFFAOYSA-N 0.000 description 1
- 210000000988 bone and bone Anatomy 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- PFPTYRFVUHDUIN-UHFFFAOYSA-N dichloro(diphenyl)germane Chemical compound C=1C=CC=CC=1[Ge](Cl)(Cl)C1=CC=CC=C1 PFPTYRFVUHDUIN-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000000706 filtrate Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004811 liquid chromatography Methods 0.000 description 1
- 229910003002 lithium salt Inorganic materials 0.000 description 1
- 159000000002 lithium salts Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- -1 methylpropyldichlorogermane Chemical compound 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は成形加工性に優れ、バンドギャップ可変の高分
子半導体に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a polymer semiconductor with excellent moldability and variable bandgap.
一般に高分子材料は成形加工性に優れており、任意基板
上に大面積の薄膜を容易に作製できるという形態的特徴
を有する。また、機能的には半導体的性質を有するもの
としてポリアセチレンがある。しかし、１）−ｎ制御可
能な炭素系高分子はポリアセチレン以外になくバンドギ
ャップは赤外部に固定されている。更に、ポリアセチレ
ンは不溶不融のため成形加工性に乏しい。In general, polymeric materials have excellent moldability and have a morphological feature that allows them to easily form large-area thin films on arbitrary substrates. In addition, polyacetylene is functionally functional as a material having semiconducting properties. However, the only carbon-based polymer that can control 1)-n is polyacetylene, and its band gap is fixed in the infrared region. Furthermore, since polyacetylene is insoluble and infusible, it has poor moldability.
他方、高分子半導体であるポリシラン、ポリゲルマンは
成形加工性に富むが、それらのバンドギャップはそれぞ
れ固有の値しかもたないという欠点があった。On the other hand, polysilane and polygermane, which are polymeric semiconductors, have excellent moldability, but have the disadvantage that their band gaps each have a unique value.
本発明の目的は、広い範囲で任意のバンドギャップを持
ち、かつ、成形加工性に優れた高分子半導体を提供する
ことにある。An object of the present invention is to provide a polymer semiconductor that has a desired band gap within a wide range and has excellent moldability.
本発明を概説すれば、本発明は高分子半導体に関する発
明であって該高分子半導体が、下記一般式Ｉ：
（式中Ｒ１〜Ｒ４は同−又は異なり、水素、アルキル基
又はフェニル基を示し、ｎ及びｍは１〜１００の数を示
す）で表される構造単位を含有するポリシラン−ポリゲ
ルマン共重合体からなることを特徴とする。To summarize the present invention, the present invention relates to a polymer semiconductor, and the polymer semiconductor has the following general formula I: (wherein R1 to R4 are the same or different and represent hydrogen, an alkyl group, or a phenyl group. , n and m are numbers from 1 to 100).
第１図にポリシラン−ポリゲルマン共重合体のバンド構
造図を示す。ポリゲルマンはポリシランの高いポテンシ
ャル障壁に囲まれた量子井戸として憑舞い、そのバンド
ギャップはポリゲルマンの長さすなわち、重合度によシ
変化し、ｍ＝１〜１００で４．０〜λ５θＶの範囲で変
化する。FIG. 1 shows a band structure diagram of a polysilane-polygermane copolymer. Polygermane exists as a quantum well surrounded by a high potential barrier of polysilane, and its band gap varies depending on the length of polygermane, that is, the degree of polymerization, and ranges from 4.0 to λ5θV when m = 1 to 100. It changes with
このようなポリシラン−ポリゲルマン共重合体はドナー
やアクセプターの拡散、加速イオン注入によりｐ−ｎ制
御が可能であシ、例えばドナーとして金目リチウム、金
属ナトリウムあるいは金（・１カリウムを熱拡散すると
いずれの場合も電導度が１０′″ｌＯ〜１０δ・、−１
の範囲で制御可能なｎ型半導体となり、アクセプターと
して工！、ＰＦ、あるいはＡｓＦ、を拡散すると、工２
及びＰＦ、の場合には電導度が１０−１’〜１０−２δ
°ロー”、ＡｓＦ５の場合には１０″″１０〜１Ωδ・
ｆｆ１−’の範囲で制御可能なｐ型半導体となる。また
、ナトリウムイオンの注入によυ、１０−１°〜１０δ
・鋸−１の範囲で制御可能なｎ型半導体となる。Such polysilane-polygermane copolymers can be controlled by p-n control by donor or acceptor diffusion or accelerated ion implantation. In the case of , the conductivity is 10′″lO~10δ・,−1
It becomes an n-type semiconductor that can be controlled within the range of , and is engineered as an acceptor! , PF, or AsF, when diffused,
and PF, the conductivity is 10-1' to 10-2δ
°low", 10""10~1Ωδ・in the case of AsF5
It becomes a p-type semiconductor that can be controlled within the range of ff1-'. In addition, by implanting sodium ions, υ, 10-1° ~ 10δ
・It becomes an n-type semiconductor that can be controlled within the range of saw-1.
上述のドーピング法により得らｎるｐ型、ｎ型半導体か
らｐ−ｎ接合薄膜を炸裂し発光素子に応用した例を第２
図に示す。In the second example, a p-n junction thin film is exploded from p-type and n-type semiconductors obtained by the above doping method and applied to a light emitting device.
As shown in the figure.
次に本発明の共重合体の合成法について説明する。この
ような共重合体は、１）シラン誘導体のジハロゲン化物
とゲルマン訪導体のジハロゲン化物を溶融ナトリウムと
反応させることによシ、また２）ポリシラン（重合度ｎ
）のリチウム塩とポリゲルマン（重合度ｍ）のハロゲン
化物との“反応等によシ得られる。Next, a method for synthesizing the copolymer of the present invention will be explained. Such a copolymer can be produced by 1) reacting a dihalide of a silane derivative and a dihalide of a germanic conductor with molten sodium, and 2) by reacting a polysilane (with a degree of polymerization n
) and a halide of polygermane (degree of polymerization m).
まず１）の方法について、メチルプロピルジクロロシラ
ンとメチルプロピルジクロロゲルマンの反応を例に挙げ
て説明する。First, method 1) will be explained using the reaction of methylpropyldichlorosilane and methylpropyldichlorogermane as an example.
メチルプロピルジクロロシラン５０１とメチルプロピル
ジクロコゲルマン６４．３Ｆを５００ｍ７！のテ）・ラ
ヒドロフラン（ＴＨＦ）中、１１．４ｆの金属リチウム
とアルゴン雰囲気下室温で３時間かくはん後、少量のエ
タノ′−ルで未反応の金属リチウムを分解し、反応液を
１０倍量のアセトン中へ注下するとｎ：ｍ＝５：１の共
重合体が析出する。析出した共重合体を戸別し、水洗、
乾燥後ベンゼン−アセトン系で数回再沈殿し精製する。500m7 of methylpropyldichlorosilane 501 and methylpropyldichlorogelmane 64.3F! After stirring 11.4 f metallic lithium in THF and argon atmosphere at room temperature for 3 hours, unreacted metallic lithium was decomposed with a small amount of ethanol, and the reaction solution was diluted with 10 times the volume. When poured into acetone, a copolymer with n:m=5:1 is precipitated. The precipitated copolymer was collected door to door, washed with water,
After drying, it is purified by reprecipitation several times using a benzene-acetone system.
ゲルマン系モノマーの仕込み比が０．０５〜１００（対
シラン系モノマー）の範囲で、ｍ／ｎ ｄｓ ０．０１
〜１００の共重合体が得られる。m/n ds 0.01 when the charging ratio of germane monomer is in the range of 0.05 to 100 (to silane monomer)
~100 copolymers are obtained.
次に２）の方法について、パーメチルオクタシラン−バ
ーフェニルへ≧サゲルマン共ｆｆｉ合体を１つの実施例
として説明する。その合成経路は以下のとおシである。Next, method 2) will be explained using as one example the combination of ≧Sagelman co-ffi to permethyloctasilane-verphenyl. The synthetic route is as follows.
ｉ）パーメチルシクロオクタシラン＋Ｉｌｌの合成ジメ
チルジクロロシラン０） １００ ｔを５００ｒｎｔＴ
′ＨＦ中１１．４９の金属リチウムと０℃で３０時間か
くけん後、反応液を１０倍量の水中へ注下し、濾過する
。濾過物はｎｗ ４〜３２の混合物であるため、乾燥後
クロロホルムに溶解し、液体クロマトグラフィーにてｎ
＝＝８の成分を分離する。溶媒を留去しベンゼン−ヘキ
サン系で２回再結晶し、１０？のｔｎ＋を得る。i) Synthesis of permethylcyclooctasilane + Ill dimethyldichlorosilane 0) 100t to 500rntT
'After stirring with 11.49% metallic lithium in HF at 0°C for 30 hours, the reaction solution was poured into 10 times the amount of water and filtered. Since the filtrate is a mixture of nw 4 to 32, after drying, it was dissolved in chloroform and analyzed by liquid chromatography.
Separate ==8 components. The solvent was distilled off and recrystallized twice with benzene-hexane system to obtain a 10? Obtain tn+ of .
１ｉ）１．８−ジリチオパーメチルオクタシラン（■）
の合成
（■）の五〇２を１５ｄＴＨＦ中、［Ｌ１７ｆの金属リ
チウムと３５℃で８時間かくはんすると、リチウム塩（
Ｉｌｌ）のＴＨＦ溶液が得られ、このまま、次の反応に
供する。1i) 1,8-dilithiopermethyloctasilane (■)
Synthesis (■) When 502 is stirred with metallic lithium [L17f] in 15 dTHF at 35°C for 8 hours, the lithium salt (
A THF solution of Ill) is obtained and used as is for the next reaction.
ｉｉｉ ）パーフェニルシクロヘキサゲルマン（Ｖ）ノ
合成
ジフェニルジクロロゲルマンＱＶ）１５０ｆを７、４
ｔの金属リチウムと１）と同様にして反応させ、２２ｆ
の閑を得る。iii) Synthesis of perphenylcyclohexagermane (V) diphenyldichlorogermane QV) 150f at 7,4
t is reacted with metallic lithium in the same manner as in 1), and 22f
Get some quiet time.
１ｖ）１．６−ジブロモパーフェニルヘキサゲルマン（
Ｖｌ）の合成
閑の２０２を５００−ベンゼン中５．７２の臭素と室温
で１５時間かくはん後、溶媒を留去し、シクロヘキサン
にて２回再結晶し、１０２の（ＶＤを得る。1v) 1,6-dibromoperphenylhexagermane (
Synthesis of Vl) After stirring 202 with 5.72 bromine in 500-benzene at room temperature for 15 hours, the solvent was evaporated and recrystallized twice from cyclohexane to obtain 102 (VD).
■）パーメチルオクタンラン−パーツ二二ルヘキサゲル
マン共重合体（■）の合成
ａ９ｆの（Ｖ）を１００−のＴＨＦに溶解し、室温かく
はん下合成直後の（ＩＩＩ）のＴＨＩＦ溶液を徐々に滴
下する。滴下終了後、反応液を１０倍量のアセトン中へ
注下し、析出した共重合体（４）を戸別乾燥し、ベンゼ
ン−アセトン系で数回再沈殿し精製する。■) Synthesis of permethyloctane-pertsinylhexagermane copolymer (■) Dissolve (V) of a9f in 100% THF, and gradually add the THIF solution of (III) immediately after synthesis under stirring at room temperature. Drip. After the dropwise addition is completed, the reaction solution is poured into 10 times the volume of acetone, and the precipitated copolymer (4) is dried individually and purified by reprecipitation several times with a benzene-acetone system.
側鎖置換基（Ｒ，−ｗＲ，）の組合せが上記以外の共重
合体についても、同様の方法によシ合成でき、今回合成
した共重合体の構造式を以下にまとめて示す。ただし、
Ｍｅはメチル基、ｉｔはエチル基、Ｐｒはプロピル基、
φはフェニル基を示す。Copolymers having combinations of side chain substituents (R, -wR,) other than those mentioned above can also be synthesized by the same method, and the structural formulas of the copolymers synthesized this time are summarized below. however,
Me is a methyl group, it is an ethyl group, Pr is a propyl group,
φ represents a phenyl group.
水素を側鎖とするものは空気中で容易に分解される。Those with hydrogen as a side chain are easily decomposed in the air.
また、重合度ｍ、ｎは重合法によって異な９次の様であ
る。Further, the degrees of polymerization m and n are of the 9th order, which vary depending on the polymerization method.
合成法１）の場合：すべでの共重合体について、ｍ＝１
〜１００ 、ｍ／ｎ−α０１〜１００である。In the case of synthesis method 1): m=1 for all copolymers
~100, m/n-α01~100.
合成法２）の場合二骨印の共重合体についてｍ＝ａ、５
．６．７、ｎ＝４．５
その他の共重合体についてｍｘ
４．５．６．７、ｎ＝４．５．６．７．８．９．１０１
１１．１２．２４．３２、 である。In the case of synthesis method 2), m = a, 5 for the copolymer with two bone marks.
．． 6.7, n=4.5 mx 4.5.6.7, n=4.5.6.7.8.9.101 for other copolymers
11.12.24.32.
以下、本発明を実施例により更に具体的に説明するが、
本発明はこれら実施例に限定されない。Hereinafter, the present invention will be explained in more detail with reference to Examples.
The invention is not limited to these examples.
実施例１
第２図に示した構造の発光素子を以下のようにして作製
した。Example 1 A light emitting device having the structure shown in FIG. 2 was manufactured as follows.
ネサ板等の透明電極の上にスピンコーティング法により
ｎ型５μｆｆ１％ ｐ型５μ、の共重合体層を積層し、
ｐ−ｎ接合フィルムを作製する。真空蒸着によりアルミ
ニウム電極を形成して発光素子を作製した。この発光素
子は、順方向に１０Ｖ程度の電圧を印加すると発光した
。A copolymer layer of n-type 5 μff1% and p-type 5 μ is laminated by spin coating on a transparent electrode such as a Nesa plate,
Prepare a pn junction film. A light emitting device was manufactured by forming an aluminum electrode by vacuum evaporation. This light emitting element emitted light when a voltage of about 10 V was applied in the forward direction.
以上説明したように本発明の半導体はポリシラン−ポリ
ゲルマン共重合体であるから、バンドギャップを広い範
囲で任意に制御でき、アクセプターやドナーによ５ ｐ
、、ｎ制御ができ、成形加工性に富んでいる利点がある
。しだがって、任意色、任意形状、大面積の発光素子が
容易に作製できる。As explained above, since the semiconductor of the present invention is a polysilane-polygermane copolymer, the band gap can be arbitrarily controlled within a wide range, and the 5 p
, , n control, and has the advantage of being rich in moldability. Therefore, a light-emitting element of any color, any shape, and large area can be easily produced.
第１図は本発明の共重合体のバンド構造図、第２図は本
発明の共重合体を用いた発光素子の１例の構造図である
。FIG. 1 is a band structure diagram of the copolymer of the present invention, and FIG. 2 is a structural diagram of an example of a light emitting device using the copolymer of the present invention.
Claims (1)
ル基又はフェニル基を示し、ｎ及びｍは１〜１００の数
を示す）で表される構造単位を含有するポリシラン−ポ
リゲルマン共重合体からなることを特徴とする高分子半
導体。[Claims] 1. The following general formula I: ▲There are mathematical formulas, chemical formulas, tables, etc.▼...(I) (In the formula, R_1 to R_4 are the same or different and represent hydrogen, an alkyl group, or a phenyl group, 1. A polymer semiconductor comprising a polysilane-polygermane copolymer containing a structural unit represented by (n and m are numbers from 1 to 100).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60038666A JPS61200130A (en) | 1985-03-01 | 1985-03-01 | Polymeric semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60038666A JPS61200130A (en) | 1985-03-01 | 1985-03-01 | Polymeric semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61200130A true JPS61200130A (en) | 1986-09-04 |
Family
ID=12531591
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60038666A Pending JPS61200130A (en) | 1985-03-01 | 1985-03-01 | Polymeric semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61200130A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4960666A (en) * | 1989-02-27 | 1990-10-02 | Xerox Corporation | Toner and developer compositions with polysilylenes |
| US7491782B1 (en) * | 2004-10-08 | 2009-02-17 | Kovio, Inc. | Polysilane compositions, methods for their synthesis and films formed therefrom |
| US7943721B2 (en) | 2005-10-05 | 2011-05-17 | Kovio, Inc. | Linear and cross-linked high molecular weight polysilanes, polygermanes, and copolymers thereof, compositions containing the same, and methods of making and using such compounds and compositions |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6187729A (en) * | 1984-10-05 | 1986-05-06 | Nippon Telegr & Teleph Corp <Ntt> | Copolymer |
-
1985
- 1985-03-01 JP JP60038666A patent/JPS61200130A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6187729A (en) * | 1984-10-05 | 1986-05-06 | Nippon Telegr & Teleph Corp <Ntt> | Copolymer |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4960666A (en) * | 1989-02-27 | 1990-10-02 | Xerox Corporation | Toner and developer compositions with polysilylenes |
| US7491782B1 (en) * | 2004-10-08 | 2009-02-17 | Kovio, Inc. | Polysilane compositions, methods for their synthesis and films formed therefrom |
| US7723457B1 (en) | 2004-10-08 | 2010-05-25 | Kovio, Inc. | Polysilane compositions, methods for their synthesis and films formed therefrom |
| US8236916B1 (en) | 2004-10-08 | 2012-08-07 | Kovio, Inc. | Polysilane compositions, methods for their synthesis and films formed therefrom |
| US8455604B1 (en) | 2004-10-08 | 2013-06-04 | Kovio, Inc. | Polysilane compositions, methods for their synthesis and films formed therefrom |
| US7943721B2 (en) | 2005-10-05 | 2011-05-17 | Kovio, Inc. | Linear and cross-linked high molecular weight polysilanes, polygermanes, and copolymers thereof, compositions containing the same, and methods of making and using such compounds and compositions |
| US8378050B2 (en) | 2005-10-05 | 2013-02-19 | Kovio, Inc. | Linear and cross-linked high molecular weight polysilanes, polygermanes, and copolymers thereof, compositions containing the same, and methods of making and using such compounds and compositions |
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