JPS61198687A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS61198687A JPS61198687A JP60038168A JP3816885A JPS61198687A JP S61198687 A JPS61198687 A JP S61198687A JP 60038168 A JP60038168 A JP 60038168A JP 3816885 A JP3816885 A JP 3816885A JP S61198687 A JPS61198687 A JP S61198687A
- Authority
- JP
- Japan
- Prior art keywords
- region
- junction
- inp
- layer
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 239000012535 impurity Substances 0.000 claims description 5
- 230000001747 exhibiting effect Effects 0.000 claims description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 6
- 229910004205 SiNX Inorganic materials 0.000 abstract description 4
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 4
- 238000009792 diffusion process Methods 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 8
- 229910052681 coesite Inorganic materials 0.000 abstract 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract 4
- 239000000377 silicon dioxide Substances 0.000 abstract 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract 4
- 229910052682 stishovite Inorganic materials 0.000 abstract 4
- 229910052905 tridymite Inorganic materials 0.000 abstract 4
- 238000000098 azimuthal photoelectron diffraction Methods 0.000 description 10
- 230000005684 electric field Effects 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、逆バイアス動作で使用する半導体装置に関し
、特に光通信用光検出器に用いるアバランシ・フォトダ
イオードに適する構造の半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a semiconductor device used in reverse bias operation, and more particularly to a semiconductor device having a structure suitable for an avalanche photodiode used in a photodetector for optical communications.
（従来技術とその問題点）
半導体光検出器の中でフォトダイオード（以下ＦＤと呼
ぶ）あるいはアバランシ・フォトダイオード（以下ＡＰ
Ｄと呼ぶ）は光通信用システムにおける光検出器として
重要なものであり、光源としての半導体レーザ、発光ダ
イオードと共にその開発が進められている。現在その光
通信システムとしては、０．８−波長域あるいは、１．
３〜１．６Ｎｎ波長域がその主流となっている。０．８
７ＪＩ′ｎ波長域としては、ＧａＡｓ−ＧａＡｌＡｓ系
光源と５ｉＪＬ結晶を用いたＦＤあるいはＡＰＤが実用
に供されている。これと較べて、波長１．３〜１．６−
域の伝送媒体としての光ファイバーの極低損失に反応す
る波長域用としては、ＩｎＧａＡｓＰ−ＩｎＰ光源が主
流となっている。この波長域用の光検出としては、Ｓｉ
材料はその吸収係数が小さくなり使用不可能であること
、Ｇｅ−ＡＰＤ、 ＦＤは暗電流、過剰雑音の問題等が
あり新材料による高品質ＡＰＤの開発が待たれる。(Prior art and its problems) Among semiconductor photodetectors, there are photodiodes (hereinafter referred to as FD) or avalanche photodiodes (hereinafter referred to as AP).
D) is important as a photodetector in optical communication systems, and its development is progressing along with semiconductor lasers and light emitting diodes as light sources. Currently, the optical communication systems are in the 0.8-wavelength range or the 1.8-wavelength range.
The 3-1.6Nn wavelength range is the mainstream. 0.8
In the 7JI'n wavelength range, an FD or APD using a GaAs-GaAlAs light source and a 5iJL crystal is in practical use. Compared to this, the wavelength is 1.3-1.6-
InGaAsP-InP light sources have become mainstream for wavelength ranges that respond to the extremely low loss of optical fibers as transmission media in the wavelength range. For photodetection in this wavelength range, Si
The material has a small absorption coefficient and cannot be used, and Ge-APDs and FDs have problems such as dark current and excessive noise, so the development of high-quality APDs using new materials is awaited.
現在進められているこの１．３〜１，６−波長域用の光
検出器材料としては、ＩｎＧａＡｓ、ＩｎＧａＡｓＰ、
ＧａＡｌＳｂ、 ＧａＡｓＳｂ、 ＧａＡｌＡｓＳｂ、
Ｇａｒｂ等のｍ−ｖ族化合物半導体による報告例があ
る。例えば最近報告きれたものに、エレクトロニクス・
レターズ、 ２０巻、１６分冊６５３−６５４ページ所
載のＡＰＤがある。このＡＰＤの構造は８２図に断面図
で示したごとくであり、ｎ”−ＩｎＰ基板１１．１２上
に光吸収層としてのｎ型ＩｎＧａＡｓ層１３、及び高速
応答を得る目的でｎ型ＩｎＧａＡｓＰｙｅ１４及びｎ型
ＩｎＰ層１５．１６を層構造とし、ｎ−Ｉｎｋ層にｐ“
−ｎ接合１８を形成することにより、低暗電流、低雑音
特性が改善されている。ここで、ｐ＋−〇接合１８周縁
はいわゆるエツジ・−ｊレークダウンを防止する為にＢ
ｅ原子のイオン注入及び熱処理によるｐ領域１７を形成
し、傾斜接合に近いＰ−ｎ接合１８′により保護されて
いる。しかしながら、第２図のｐ ４− ｎ接合１８の
平坦性にバラツキがあり、再現性にやや劣り、また一層
の低雑音化が求められる。Photodetector materials for the 1.3-1,6-wavelength range that are currently being developed include InGaAs, InGaAsP,
GaAlSb, GaAsSb, GaAlAsSb,
There are reports of m-v group compound semiconductors such as Garb et al. For example, one of the things that has been reported recently is the electronics
There is an APD containing Letters, Volume 20, Volume 16, pages 653-654. The structure of this APD is as shown in the cross-sectional view in FIG. The type InP layers 15 and 16 have a layered structure, and the n-Ink layer has a p"
By forming the -n junction 18, low dark current and low noise characteristics are improved. Here, the periphery of the p+-〇 junction 18 is
A p region 17 is formed by ion implantation of e atoms and heat treatment, and is protected by a P-n junction 18' which is close to a tilted junction. However, there are variations in the flatness of the p4-n junction 18 in FIG. 2, and the reproducibility is somewhat poor, and further reduction in noise is required.
（発明の目的）
本発明の目的は、ＡＰＤに適用した場合に、従来よりさ
らに低雑音で再現性に優れる半導体装置の提供にある。(Objective of the Invention) An object of the present invention is to provide a semiconductor device which, when applied to an APD, has lower noise and better reproducibility than the conventional one.
（問題点を解決するための手段）
前述の問題点を解決するために本発明が提供する手段は
、第１の導電型を示す第１の半導体層の一部の領域に前
記第１の導電型とは逆の第２の導電型を示す第２の半導
体層領域が形成してあり、前記第１及び第２の半導体層
領域の境界部が傾斜型接合に近いｐ−ｎ接合をなす半導
体装置であって、前記第２の半導体層の一部の領域に高
濃度な第２の導電型の不純物領域が形成してあることを
特徴とする。(Means for Solving the Problems) In order to solve the above-mentioned problems, the present invention provides a means for solving the above-mentioned problems by adding the first conductivity to a partial region of the first semiconductor layer exhibiting the first conductivity type. A semiconductor in which a second semiconductor layer region exhibiting a second conductivity type opposite to the type is formed, and a boundary between the first and second semiconductor layer regions forms a p-n junction close to a graded junction. The device is characterized in that a highly concentrated impurity region of a second conductivity type is formed in a part of the second semiconductor layer.
（作用）
本発明は、上述の手段により、逆バイアス印加時でのｐ
−ｎ接合周縁での降伏を阻止して、かつ、片側接合に近
いｐ−ｎ接合により得られる内部電界分布を低雑音に適
した形状にすることにより低雑音性を増しかつ再現性の
向上を可能とした。(Function) The present invention uses the above-mentioned means to reduce p when applying a reverse bias.
-By preventing breakdown at the periphery of the n-junction and shaping the internal electric field distribution obtained by the p-n junction, which is close to the one-sided junction, to a shape suitable for low noise, it is possible to increase low noise and improve reproducibility. made possible.
（実施例）
以下、本発明の実施例について図面を参照して説明する
。(Example) Hereinafter, an example of the present invention will be described with reference to the drawings.
第１図は、本発明の半導体装置の一実施例を示す概略横
断面図である。本実施例は、Ｉｎｋ−ＩｎＧａＡｓ系材
料を用いたものである。この実施例の製造では、まず（
１００）面を有するｎ”−ＩｎＰ基板１１の上にエピタ
キシャル成長法（例えば気相成長法）により数−厚のｎ
”−ＩｎＰ届１２を形成した後、膜層３Ｐｌｒｎ、不純
物濃度５ＸＩＱ”ｃｍ−”のｎ型ＩｎＧａＡｓ層１３を
形成する。次に膜層１ｏｏｏ人不純物濃度１×ＩＱ”ｃ
ｍ−”のｎ型ＩｎＧａＡｓＰＪｉ！ １４を形成し、ひ
き読き、膜層１．８−不純物濃度１．２Ｘ１０”ｃｍ−
”ノｌ型ＩｎＰＪｉ！ １５及び膜層２−１不純物濃度
ｌＸｌ０”ｃｍ−”のｎ−型Ｉｎｋ層１６を形成する。FIG. 1 is a schematic cross-sectional view showing an embodiment of the semiconductor device of the present invention. This example uses an Ink-InGaAs material. In the production of this example, first (
On the n''-InP substrate 11 having a 100) plane, a several-thick n
After forming the InP layer 12, an n-type InGaAs layer 13 with an impurity concentration of 5XIQ"cm-" is formed in a film layer 3Plrn.Next, a film layer 3Plrn and an n-type InGaAs layer 13 with an impurity concentration of 5XIQ"cm-" are formed.
m-” n-type InGaAsPJi!
15 and an n-type Ink layer 16 having an impurity concentration of 1X10 cm- in the film layer 2-1 are formed.
この様にして得られたウェーハの表面にスパッタリング
法等によりＳｉｎ、膜を形成した後、フォトレジスト目
金せ工程により前記Ｓｉｎ、膜を円状に除去し、イオン
注入技術によりこの５ｉ０．除去領域にＢｅ原子を５Ｘ
１０”／ｃｍ’程度注入する。次に上記つニー八のフォ
トレジストＳｉＯ、を除去した後、７００°Ｃ程度のリ
ン圧力下での熱処理によりｐ−ＩｎＰ基板領域１７及び
傾斜型接合に近いｐ−ｎ接合１８を得る。次に、前記同
様にＳｉｎ！あるいはｓｉＮｘＭＡｉｉ！：膜を形成し
た後、ｐ−ＩｎＰｌ ７域上でかっｐ−ＩｎＰｌ７と同
心円状領域に位置する絶縁膜を除去する。次に、Ｃｄ５
Ｐｚを拡散源として排気した閉管中に上記つニー八と共
に配し、約５７０”Ｃの熱処理を加えてＣｄの選択拡散
を施すことにより、ｐ”−ＩｎＰ域１９を形成する。試
作では約４０分の熱処理により深き約１．８−が得られ
る。次に前記と同様な方法によりＳｉＮｘあるいはＳｉ
Ｏｘ［２０を形成し、図に示す様にフォトレジスト目金
せ工程等によりｐ型電極２１及びｎ型電極２２を形成す
ることにより本実施例の半導体装置を得ることができる
。After forming a Sin film on the surface of the wafer obtained in this manner by sputtering or the like, the Sin film is removed in a circular shape by a photoresist plating process, and the 5i0. 5X Be atoms in the removal area
10"/cm'. Next, after removing the above-mentioned photoresist SiO, heat treatment is performed under phosphorus pressure at about 700°C to form p-InP substrate region 17 and p-InP near the inclined junction. -N junction 18 is obtained.Next, after forming a Sin! or siNxMAii! film in the same manner as described above, the insulating film located on the p-InPl 7 region in a concentric region with the p-InPl 7 is removed.Next , Cd5
The p''-InP region 19 is formed by placing the above-mentioned knee and eight in a closed tube that is evacuated with Pz as a diffusion source, and applying heat treatment at about 570''C to selectively diffuse Cd. In the prototype, a depth of about 1.8- is obtained by heat treatment for about 40 minutes. Next, by the same method as above, SiNx or Si
The semiconductor device of this example can be obtained by forming Ox[20 and forming a p-type electrode 21 and an n-type electrode 22 by a photoresist plating process or the like as shown in the figure.
上記した本発明の一実施例により得られた素子のブレー
クダウン電圧は約１００Ｖで暗電流も数ｎＡ程度と低く
、４５０Ｍｂ／Ｓ、波長１．３−光に対する受信特性と
して誤り率１ｏす保障で平均−４３ｄＢｍという極めて
高い感度特性が得られた。The breakdown voltage of the device obtained by the embodiment of the present invention described above is about 100V, the dark current is low at about several nA, and the reception characteristics for 450Mb/S and wavelength 1.3-light are guaranteed to have an error rate of 1o. Extremely high sensitivity characteristics of -43 dBm on average were obtained.
本実施例の効果を第３図を用いて説明する。即ち第３図
には、例えば第２図に示したと同様な構造により得られ
るブレークダウン時の内部電界分布線Ｉと、本実施例に
より得られるブレークダウン時の内ｇＪ電界分布線■が
示しである。本図から本実施例の構造により、最大ｉ異
強度が低下し、かつ高電界域幅が増大していることが分
る。このことが本実施例の効果をもたらす要点である。The effects of this embodiment will be explained using FIG. 3. That is, FIG. 3 shows, for example, the internal electric field distribution line I during breakdown obtained by a structure similar to that shown in FIG. 2, and the internal gJ electric field distribution line ■ during breakdown obtained by this example. be. It can be seen from this figure that the structure of this example reduces the maximum i-differential strength and increases the high electric field width. This is the key point that brings about the effects of this embodiment.
即ち、ＡＰＤの雑音特性を支配するのは正孔及び電子の
衝突イオン化率比が大きいほど低雑音化が達成されるの
であり、この比は、最大電界強度が低いときほど大きく
なる傾向にあるから、最大電界強度が低いことが重要で
ある。又、本実施例で示した様に、傾斜型接合により得
られたｐ−ｎ接合１８′は比較的平坦性に優れており、
内部電界の接合面内分布むらも小さくなる傾向を有して
いるから、特性の再現性の向上即ち素子歩留りの向上に
も適している。以上、一実施例にもとづき本発明を詳
５しく説明したが、結晶の面方位、結晶の組合せが実施
例とは異なる場合にも本発明の構成によれば同様の効果
が得られるのは明らかである。In other words, what governs the noise characteristics of APD is that the larger the ratio of impact ionization rates between holes and electrons, the lower the noise will be achieved, and this ratio tends to become larger as the maximum electric field strength is lower. , it is important that the maximum electric field strength is low. Furthermore, as shown in this example, the p-n junction 18' obtained by the inclined junction has relatively excellent flatness.
Since the distribution unevenness of the internal electric field within the junction surface tends to be reduced, it is also suitable for improving the reproducibility of characteristics, that is, improving the device yield. The present invention has been described in detail based on one embodiment.
Although the explanation has been made in detail, it is clear that the same effects can be obtained according to the configuration of the present invention even when the crystal plane orientation and the crystal combination are different from those in the embodiment.
（発明の効果）
以上に詳しく説明したように、本発明によれば、ＡＰＤ
に適用した場合に、従来よりさらに低雑音で再現性に優
れる半導体装置が提供できる。(Effects of the Invention) As explained in detail above, according to the present invention, the APD
When applied to the present invention, it is possible to provide a semiconductor device with lower noise and better reproducibility than before.
第１図は本発明の一実施例を示す概略横断面図、第２図
は従来のＡＰＤを示す概略断面図、第３図は第１図実施
例及び第２図のＡＰＤのブレークダウン時の内部電界分
布を示す図である。
１１−ｎ”−ＩｎＰ基板、１２ ＝ｎ”−ＩｎＰエピタ
キシャル、ｌ ３ ・・・ｎ−ＩｎＧａＡｓ層、１４−
ｎ−ＩｎＧａＡｓＰ層、１５ ＝ｎ−ＩｎＰ層、１６
＝ｎ−ＩｎＰ層、１７−ｐ−ＩｎＰ領域、１８ 、１８
’−ｐ−ｎ接合、１９ ・・・ｐ”−ＩｎＰ領域、２
０ ・＝ＳｉＮｘ又はＳｉｎ、膜、２１ ・ｐ型電極、
２２ ・・・ｎ型電極。
代理人弁理士 本 庄 伸 介
第１図
第２図
第３ｒＡ
３采 さFIG. 1 is a schematic cross-sectional view showing an embodiment of the present invention, FIG. 2 is a schematic cross-sectional view showing a conventional APD, and FIG. 3 is a breakdown diagram of the APD shown in the embodiment shown in FIG. FIG. 3 is a diagram showing an internal electric field distribution. 11-n"-InP substrate, 12 =n"-InP epitaxial, l3...n-InGaAs layer, 14-
n-InGaAsP layer, 15 = n-InP layer, 16
=n-InP layer, 17-p-InP region, 18, 18
'-p-n junction, 19...p''-InP region, 2
0 ・=SiNx or Sin, film, 21 ・p-type electrode,
22...n-type electrode. Representative patent attorney Shinsuke Honjo Figure 1 Figure 2 Figure 3 rA 3 posts
Claims (1)
第１の導電型とは逆の第２の導電型を示す第２の半導体
層領域が形成してあり、前記第１及び第２の半導体層領
域の境界部が傾斜型接合に近いｐ−ｎ接合をなす半導体
装置において、前記第２の半導体層の一部の領域に高濃
度な第２の導電型の不純物領域が形成してあることを特
徴とする半導体装置。A second semiconductor layer region exhibiting a second conductivity type opposite to the first conductivity type is formed in a partial region of the first semiconductor layer exhibiting the first conductivity type; and a semiconductor device in which a boundary portion of a second semiconductor layer region forms a p-n junction close to a graded junction, wherein a high concentration impurity region of a second conductivity type is provided in a part of the region of the second semiconductor layer. A semiconductor device characterized in that:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60038168A JPS61198687A (en) | 1985-02-27 | 1985-02-27 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60038168A JPS61198687A (en) | 1985-02-27 | 1985-02-27 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61198687A true JPS61198687A (en) | 1986-09-03 |
Family
ID=12517866
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60038168A Pending JPS61198687A (en) | 1985-02-27 | 1985-02-27 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61198687A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58168283A (en) * | 1982-03-30 | 1983-10-04 | Fujitsu Ltd | Semiconductor light receiving device |
-
1985
- 1985-02-27 JP JP60038168A patent/JPS61198687A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58168283A (en) * | 1982-03-30 | 1983-10-04 | Fujitsu Ltd | Semiconductor light receiving device |
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