JPS61186744A - Method of and device for cleaning air - Google Patents
Method of and device for cleaning airInfo
- Publication number
- JPS61186744A JPS61186744A JP60025192A JP2519285A JPS61186744A JP S61186744 A JPS61186744 A JP S61186744A JP 60025192 A JP60025192 A JP 60025192A JP 2519285 A JP2519285 A JP 2519285A JP S61186744 A JPS61186744 A JP S61186744A
- Authority
- JP
- Japan
- Prior art keywords
- air
- workpiece
- vicinity
- cleanliness
- work
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
Landscapes
- Ventilation (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、クリーントンネル、クリーンチュ−ブ、クリ
ーンベンチ、クリーンブースなどの作業を行う部分の空
気を浄化する方法及びその装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method and apparatus for purifying the air in a work area such as a clean tunnel, clean tube, clean bench, clean booth, etc.
従来の室内の空気清浄方法或いはその装置を大別すると
、
（１）機械的濾過方式（例えばＥＩＫＰムフィルター）
（２）静電的に微粒子の捕集を行う静電式フィルタ一方
式
があるが、これらの方式には夫々次の欠点があった。Conventional indoor air purification methods and devices can be roughly divided into: (1) Mechanical filtration methods (e.g. EIKP filter)
(2) There is one type of electrostatic filter that collects particulates electrostatically, but each of these types has the following drawbacks.
（１）の機械゛的濾過装置の主な構成は、７７ンとフィ
ルターであるが、空気の清浄度を上げるためには目の細
かいフィルターを用いる必要がある。この方式は一般に
集塵効率は高いが圧損も高く、このため圧損を小さくし
ようとしてフィルターの目の粗いものを用いると集塵効
率が低下する。また、目詰シによる圧力損失の増加も著
るしくフィルターの寿命が短かい。例えば半導体製造工
場におけるクリーンルームでのフィルター交換に際して
は、その間工場がストップし、また、復帰までＫは可成
の時間を要する。The main structure of the mechanical filtration device (1) is a 77-hole filter, but it is necessary to use a fine-mesh filter to increase the cleanliness of the air. This method generally has high dust collection efficiency, but also high pressure loss. Therefore, if a coarse filter is used in an attempt to reduce pressure loss, the dust collection efficiency will decrease. In addition, the pressure loss due to clogging increases significantly, and the life of the filter is shortened. For example, when replacing a filter in a clean room in a semiconductor manufacturing factory, the factory is stopped during that time, and it takes a considerable amount of time for K to recover.
また、空気の清浄度を上げるため換気回数を増加すれば
よいが、この場合動力費が高くつく。Additionally, in order to improve the cleanliness of the air, the number of ventilations can be increased, but in this case the power cost will be high.
（２）の静電的に微粒子の捕集を行う静電式フィルタ一
方式における主な構成はファン、予備荷電部、静電フィ
ルターであシ、予備荷電部は高圧電源を必要とし、この
ため装置は大型となり安全性の問題の外、極板上への粒
子の堆積・飛散、及び高いクリーン度を維持するのく可
成の安全率を見込んで運転するためコスト高になる等そ
の維持管理の複雑さ等の問題がある。The main components of (2) one-type electrostatic filter that electrostatically collects particulates are a fan, a pre-charging section, and an electrostatic filter.The pre-charging section requires a high-voltage power supply. The equipment is large and has safety issues, as well as problems such as particle accumulation and scattering on the electrode plates, and high costs as the equipment must be operated with a reasonable safety margin in mind to maintain a high degree of cleanliness. There are problems such as complexity.
今後、産業技術の高度化に対し超高クリーン度のクリー
ンルームが必要とされる状況下にある。そしてクラス１
０位までの高クリーン度までは前に述べたような方式及
びその応用技術で達成しうると考えられるが、この場合
経済性に問題がある。また、クラス１の如き超高クリー
ンルームは現状の技術では達成困難と考えられる。In the future, as industrial technology becomes more sophisticated, clean rooms with ultra-high cleanliness will be required. and class 1
It is thought that a high level of cleanliness down to 0 can be achieved using the method described above and its applied technology, but in this case there is a problem in economic efficiency. Furthermore, it is considered difficult to achieve an ultra-high clean room such as Class 1 with current technology.
例えば、半導体業界では近い将来超高集積度（例えば１
６Ｍビット）の製品が必要とされるが、これは現状のク
リーンルーム技術では達成困難と考えられる。そして、
高クリーン度になると作業者からの発塵の影響が大きく
、例えば現状における最高レベルのダウン７０−型のク
リーンルームで被加工物の作業者からの影響を除く為に
は、少くとも作業者をウエーノ・から７０ｃｒＩｌ〜１
等隔離する必要がある。For example, in the semiconductor industry, ultra-high integration (for example, 1
6 Mbit) is required, which is considered difficult to achieve with current clean room technology. and,
The higher the cleanliness level, the greater the influence of dust generated by workers.For example, in order to eliminate the influence of dust from workers on workpieces in the current highest-level down 70-type clean room, it is necessary to at least remove workers from the wafer.・From 70crIl~1
It is necessary to isolate them equally.
本発明は、被加工物或いはその近傍を空気の清浄度クラ
ス１００以下に、容易に保ちうる空気清浄方法及びその
装置を提供することを目的とする。SUMMARY OF THE INVENTION An object of the present invention is to provide an air cleaning method and apparatus that can easily maintain a workpiece or its vicinity at an air cleanliness class of 100 or lower.
本発明は、
１、 微粒子や微生物等を含有する空気を浄化する方法
において、被加工物及び／又はその近傍を加熱すること
を特徴とする空気の清浄方法。The present invention provides: 1. A method for purifying air containing fine particles, microorganisms, etc., which comprises heating a workpiece and/or its vicinity.
及び
λ 微粒子や微生物等を含有する空気を吸入する吸入口
から排出口までの間に、被加工物及び／又はその近傍を
加熱する手段、及び被加工物及び／又はその近傍の温度
を測定する手段を備えてなる被加工物近傍の空気清浄装
置。and λ A means for heating the workpiece and/or its vicinity, and a means for measuring the temperature of the workpiece and/or its vicinity, between the inlet for inhaling air containing fine particles and microorganisms, etc., and the outlet. An air cleaning device near a workpiece, comprising means.
である。It is.
以下、図面に基いて本発明の詳細な説明する。Hereinafter, the present invention will be explained in detail based on the drawings.
実施例として、半導体を製造するクリーンルは、従来の
メカニカルフィルターによシフリーンルーム１内を中程
度の清浄度に保ち、作業場のみを本発明方法により高清
浄度に保つもので８る。クリーンルーム１の空気は、外
気２中の粗粒子をプレフィルタ−３にて除いた空気及び
クリーンルーム１内の空気を空気取出口４から取出した
空気を、ファン５を介して空気調和装置６にて調和（温
度、湿度の制御）した後、ＨＩＰＡフィルター７により
微粒子を除去ｌて供給され、清浄度（クラス）ｉｏｎ、
ｏｏｏ程度に保持される。As an example, in a clean room for manufacturing semiconductors, the interior of the clean room 1 is kept at a medium level of cleanliness using a conventional mechanical filter, and only the work area is kept at a high level of cleanliness using the method of the present invention. The air in the clean room 1 is the air from which coarse particles in the outside air 2 have been removed by a pre-filter 3 and the air inside the clean room 1 taken out from the air intake port 4, which is then passed through a fan 5 into an air conditioner 6. After conditioning (temperature and humidity control), the HIPA filter 7 removes particulates and supplies the cleanliness (class) ion,
It is maintained at about ooo.
一方、作業場はファン部１３、ＵＩ＋ＦＡフィルタ一部
９、赤外線照射及び作業物体の表面温度測定部１０、作
業台１２、よ）成るクリーントンネル１１であシ、被加
工物表面及びその近傍は清浄度クラス１程度に保持され
る。クリーントンネル１１では、クリーンルーム１内の
清浄度（クラス）ＩＱＱ、０口０の空気がファン８によ
シ吸引され、ＵＩ＋ＰＡフィルターによシ更に微粒子が
除去され、清浄度クラス１０にまで清浄度が高められる
。被加工物１３の表面温度は温度センサー１０によシモ
ニターされ、適温になるよう赤外線照射装置１０により
加熱され、作業物体表面及びその近傍はクラス１まで清
浄度が高められる。On the other hand, the work area is a clean tunnel 11 consisting of a fan unit 13, a UI + FA filter part 9, an infrared ray irradiation and work object surface temperature measurement unit 10, a work table 12, etc. The surface of the workpiece and its vicinity are kept clean. Maintained at about class 1. In the clean tunnel 11, air with a cleanliness (class) IQQ of 0 in the clean room 1 is sucked in by the fan 8, and fine particles are further removed by the UI+PA filter, increasing the cleanliness to a cleanliness class of 10. be enhanced. The surface temperature of the workpiece 13 is monitored by a temperature sensor 10, and heated by an infrared irradiation device 10 to an appropriate temperature, and the cleanliness of the workpiece surface and its vicinity is increased to class 1.
被加工物の表面温度は、周辺の温度に比べ１１〜２０℃
、好ましくは１〜５℃高く保持（例えば２．０±０１℃
）される。The surface temperature of the workpiece is 11 to 20 degrees Celsius compared to the surrounding temperature.
, preferably maintained at 1 to 5°C (e.g. 2.0±01°C)
) to be done.
温度制御は被加工物の表面温度を温度センナ−で検知し
、赤外線照射出力制御回路部に伝達することによシ行い
、温度が設定値に比べ低い場合は照射出力が高められ、
又逆の場合は出力を低くすることによシ一定温度範囲（
通常±α１℃）内に保持される。Temperature control is performed by detecting the surface temperature of the workpiece with a temperature sensor and transmitting it to the infrared irradiation output control circuit.If the temperature is lower than the set value, the irradiation output is increased.
In the opposite case, by lowering the output, it is possible to maintain a constant temperature range (
Normally maintained within ±α1°C).
温度センサーは、被加工物表面及び／又はその近傍を測
定できるものであればいずれでも良いが、被加工物の作
業性などから非接触型温度計、例えば赤外線温度計、光
フアイバ一温度計、エコー水晶温度計が実用上好ましい
。The temperature sensor may be any sensor that can measure the surface of the workpiece and/or its vicinity, but from the viewpoint of workability of the workpiece, non-contact thermometers such as infrared thermometers, optical fiber thermometers, An echo quartz thermometer is practically preferred.
被加工物の加熱は、被加工物を加熱できるものであれば
いずれでも良いが、温度精度及び制御の各易性、操作性
、作業性などから赤外線による加熱、レーザ光線による
加熱が好ましく、これらが単一で又は複合して用いられ
る。又加熱は、反射板や集光レンズを用いることで効率
良く行うことが出来る。The workpiece may be heated by any method as long as it can heat the workpiece, but heating with infrared rays and laser beams are preferable from the viewpoint of temperature accuracy, ease of control, operability, workability, etc. are used singly or in combination. Moreover, heating can be performed efficiently by using a reflecting plate or a condensing lens.
被加工物の表面及びその近傍の温度は、装置イ）’ｌ
：
の型式（輪クリーントンネルかクリーンチューブか）、
作業の種類、作業内容、作業形態、作業規模、微粒子の
粒径や密度などにより異なる。又、被加工物表面及びそ
の近傍の清浄度も作業の種類（例、半導体製造における
作業内容）等によシ異なる。The temperature of the surface of the workpiece and its vicinity is determined by the equipment a)'l
: Model (wheel clean tunnel or clean tube),
It varies depending on the type of work, work content, work form, work scale, particle size and density of fine particles, etc. In addition, the cleanliness of the surface of the workpiece and its vicinity also differs depending on the type of work (for example, the content of work in semiconductor manufacturing).
１゜ 被加工物及び／又はその近傍を周辺温度より高温
にすることによって被加工物表面及びその近傍を超高清
浄度（スーパークリーン）に保ちうる。1° By heating the workpiece and/or its vicinity to a higher temperature than the surrounding temperature, the surface of the workpiece and its vicinity can be kept at an ultra-high level of cleanliness (super clean).
２ メカニカルフィルターによる従来法と本法を組合せ
ることで、超高清浄度の環境を比較的容易、かつ経済的
に達成できた。2 By combining the conventional method using mechanical filters and this method, an ultra-high cleanliness environment could be achieved relatively easily and economically.
五 粒子径が極微細（例：＜（１１μｍ）な程有効であ
シ、半導体工業のように今後技術の発展とともに超極微
細粒子の制御が必要となる分野で極めて有効である（例
：半導体工業において、４Ｍビットの製造環境では［１
０５μ毒の極微粒子の制御が必要）。5. It is effective when the particle size is extremely fine (e.g. <(11 μm)), and it is extremely effective in fields such as the semiconductor industry where it will be necessary to control ultrafine particles as technology develops in the future (e.g. In industry, in a 4Mbit manufacturing environment [1
(need to control ultrafine particles of 05μ poison).
歳 従来技術例えばメカニカルフィルタ一方式では粒子
が極微細（例：＜（１１μ、）になるとその除去は原理
的に困難であったが、本発明によれば逆に極微細粒子程
有効である。In the prior art, for example, one type of mechanical filter, it was theoretically difficult to remove particles when they were extremely fine (for example, <(11μ)), but according to the present invention, on the contrary, the finer the particles, the more effective they are.
Ｓ 超高清浄度（例：クラス１０）になると、作業を行
う人及び作業機器からの発塵の影響が大きい（例：半導
体製造におけるウエノ・−に付着するごみの５０％前後
が作業者からの発塵によると言われる）が、本発明にお
いては、作業物体表面及びその近傍を内部から（作業物
体表面から上部に向けて微粒子が遠ざかる）清浄にする
ので、周辺で急激な発塵が生じてもその影響が少ない。S When it comes to ultra-high cleanliness (e.g. class 10), the influence of dust from workers and work equipment is large (e.g. around 50% of the dust that adheres to wafers in semiconductor manufacturing comes from workers. However, in the present invention, the surface of the workpiece and its vicinity are cleaned from the inside (fine particles move away from the surface of the workpiece upwards), which prevents sudden dust generation in the surrounding area. However, the impact is small.
＆ 従来法で用いるフィルターは、しばしばピンホール
があるため、従来法によυ高清浄度を得る場合はその工
程の維持管理が面倒であったが、本発明方法と組合せる
ことによシ、維持管理が容易となシ超高清浄度が安定に
長期間得られる。& The filters used in the conventional method often have pinholes, so when obtaining high cleanliness using the conventional method, maintenance of the process was troublesome, but by combining it with the method of the present invention, Maintenance is easy and ultra-high cleanliness can be stably obtained over a long period of time.
表凹部の簡単な説明
第１図は、本発明の方法及び装置を説明するだめの概略
図である。Brief Description of Surface Recesses FIG. 1 is a schematic diagram for explaining the method and apparatus of the present invention.
１−・−クリーンルーム、２−外気導入管、３−プレフ
ィルタ−，４−空気取出口、５−７アン、６−・・空気
調和装置、７− ）ｆＫＰＡ フィルター、８−・・フ
ァン、９−ＵＬＰＡフィルター、１０−・・赤外線照射
装置及び温度センサー、１１ ・・・・クリーントンネ
ル、１２−・・作業台、１３−・・作業物体1--Clean room, 2-Outside air introduction pipe, 3-Pre-filter, 4-Air intake port, 5-7 Anne, 6--Air conditioner, 7-) fKPA filter, 8--Fan, 9 -ULPA filter, 10--Infrared irradiation device and temperature sensor, 11--Clean tunnel, 12--Working table, 13--Working object
Claims (1)
おいて、被加工物及び／又はその近傍を加熱することを
特徴とする空気清浄方法。 ２、加熱源が赤外線及び／又はレーザー光線である特許
請求の範囲第１項記載の方法。 ３、赤外線及び／又はレーザー光線を被加工物及び／又
はその近傍に集光する特許請求の範囲第１項又は第２項
記載の方法。 ４、赤外線及び／又はレーザー光線の集光に際し、反射
板及び／又は集光レンズを使用する特許請求の範囲第３
項記載の方法。 ５、加熱上昇温度が０．１℃〜２０℃である特許請求の
範囲第１項乃至第４項の何れかに記載の方法。 ６、メカニカルフィルターによる空気清浄方法と被加工
物及び／又はその近傍を加熱する方法を組み合わせるこ
とにより、高清浄度の空気とする特許請求の範囲第１項
乃至第５項の何れかに記載の方法。 ７、メカニカルフィルターによる空気の清浄度クラスが
１，０００以上の作業室内において、被加工物及び／又
はその近傍を加熱することにより、被加工物近傍の空気
の清浄度クラスを１００以下とする特許請求の範囲第６
項記載の方法。 ８、作業室内へ空気を吸入する吸入口から空気の排出口
までの空気流路上に、 （１）空気を送る送気部 （２）被加工物及び／又はその近傍の加熱部（３）被加
工物及び／又はその近傍の温度の測定部 を設けてなる空気清浄装置。[Claims] 1. An air purification method for purifying contaminated air containing fine particles, microorganisms, etc., which comprises heating a workpiece and/or its vicinity. 2. The method according to claim 1, wherein the heating source is an infrared ray and/or a laser beam. 3. The method according to claim 1 or 2, in which infrared rays and/or laser beams are focused on the workpiece and/or its vicinity. 4. Claim 3 which uses a reflector and/or a condensing lens when condensing infrared rays and/or laser beams
The method described in section. 5. The method according to any one of claims 1 to 4, wherein the heating temperature increase is 0.1°C to 20°C. 6. The method according to any one of claims 1 to 5, which provides highly clean air by combining an air cleaning method using a mechanical filter and a method of heating the workpiece and/or its vicinity. Method. 7. A patent that reduces the cleanliness class of the air near the workpiece to 100 or less by heating the workpiece and/or its vicinity in a work room where the air cleanliness class of the mechanical filter is 1,000 or more. Claim No. 6
The method described in section. 8. On the air flow path from the inlet that sucks air into the work chamber to the air outlet, (1) an air supply section that sends air, (2) a heating section for the workpiece and/or its vicinity, and (3) a An air cleaning device equipped with a temperature measuring section of the workpiece and/or its vicinity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60025192A JPS61186744A (en) | 1985-02-14 | 1985-02-14 | Method of and device for cleaning air |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60025192A JPS61186744A (en) | 1985-02-14 | 1985-02-14 | Method of and device for cleaning air |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61186744A true JPS61186744A (en) | 1986-08-20 |
| JPH0520657B2 JPH0520657B2 (en) | 1993-03-22 |
Family
ID=12159098
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60025192A Granted JPS61186744A (en) | 1985-02-14 | 1985-02-14 | Method of and device for cleaning air |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61186744A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009028632A (en) * | 2007-07-26 | 2009-02-12 | Tokyo Electron Ltd | Gas cleaning apparatus and gas cleaning method |
| JP2013039565A (en) * | 2012-09-03 | 2013-02-28 | Tokyo Electron Ltd | Apparatus for cleaning gas |
-
1985
- 1985-02-14 JP JP60025192A patent/JPS61186744A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009028632A (en) * | 2007-07-26 | 2009-02-12 | Tokyo Electron Ltd | Gas cleaning apparatus and gas cleaning method |
| JP2013039565A (en) * | 2012-09-03 | 2013-02-28 | Tokyo Electron Ltd | Apparatus for cleaning gas |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0520657B2 (en) | 1993-03-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |