JPS61181124A - Method for liquid-phase growth - Google Patents
Method for liquid-phase growthInfo
- Publication number
- JPS61181124A JPS61181124A JP60022416A JP2241685A JPS61181124A JP S61181124 A JPS61181124 A JP S61181124A JP 60022416 A JP60022416 A JP 60022416A JP 2241685 A JP2241685 A JP 2241685A JP S61181124 A JPS61181124 A JP S61181124A
- Authority
- JP
- Japan
- Prior art keywords
- inp
- solution
- uniformity
- crystals
- degree
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02392—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Led Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は元ファイバー通信あるいはＤＡＤ等の元ビーム
応用等に用いられる光半導体素子の結晶成長方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for growing crystals of optical semiconductor devices used in fiber optic communications, DAD, and other beam applications.
従来、この種の光半導体素子のエピタキシャル成長では
液相成長法が主に用いられる。この数層の薄膜を連続し
て成長させる液相成長法ではＩｎ１Ｇａ等の溶媒物質に
ＩｎＰｙＧａＡｓ等の溶質を高温で飽和状態近（まで溶
かし込み、降温させることにより過剰の溶質を基板上に
析出させる方法を用いている。この時、高温において溶
質が溶媒中に完全に溶解し、液相のみになってしまう場
合をスーパークーリング法溶質が溶媒に溶は切らずに固
相として残る場合を二相成長法と呼ぶ。Conventionally, a liquid phase growth method has been mainly used for epitaxial growth of this type of optical semiconductor device. In this liquid phase growth method, in which several layers of thin films are successively grown, a solute such as InPyGaAs is dissolved in a solvent substance such as In1Ga at a high temperature until it reaches a near saturation state, and the excess solute is precipitated on the substrate by lowering the temperature. At this time, super cooling is used when the solute completely dissolves in the solvent at high temperatures, leaving only a liquid phase.When the solute does not dissolve in the solvent and remains as a solid phase, it is called two-phase. It is called the growth method.
上述した従来のエピタキシャル成長法では過飽和度の制
御が離しく、結晶成長速度の再現性及び均一性に問題が
ある。In the conventional epitaxial growth method described above, the degree of supersaturation is difficult to control, and there are problems with the reproducibility and uniformity of the crystal growth rate.
液相エピタキシャル成長においては、成長は溶質が過剰
に溶解しているいわゆる過飽和状態におい【行われる。In liquid phase epitaxial growth, growth is carried out in a so-called supersaturated state where an excessive amount of solute is dissolved.
従来のスーパークーリング法においては溶液全体の過飽
和度の均−注は良いが、初期の仕込み量の微妙な変動が
過飽和度の変動に大きく影響する。又過飽和度がある限
界を越えた場合溶液全体において微小核形成が起り、過
飽和度は急激に低下しかつ不均一になる。一方、二相成
長法におい【は降温により過剰となった溶質は固相に析
出する。従って溶液中の過飽和度は固相からの距離で決
まる分布を待つようになる。そのため溶液中の固相の大
きさ、位置により基板上への成長速度に不均一性が生じ
る。そこでこの成長速度の不均一性を改善する手段とし
て溶液全面に固相を載置したオーバーシード法が行なわ
れているが、固相かもの距離が太き（取れず、溶液の過
飽和度が大きく出来ないという欠点がある。従ってこの
オーバーシード法は薄膜成長の均一性は良いが、埋込み
成及や厚膜成長には不向きである。In the conventional supercooling method, the supersaturation level of the entire solution can be uniformly poured, but subtle fluctuations in the initial charge amount greatly affect the fluctuations in the supersaturation level. Furthermore, when the degree of supersaturation exceeds a certain limit, micronucleation occurs throughout the solution, and the degree of supersaturation rapidly decreases and becomes non-uniform. On the other hand, in the two-phase growth method, excess solute is precipitated in the solid phase due to temperature decrease. Therefore, the degree of supersaturation in the solution follows a distribution determined by the distance from the solid phase. Therefore, non-uniformity occurs in the growth rate on the substrate depending on the size and position of the solid phase in the solution. Therefore, as a means to improve the non-uniformity of the growth rate, an overseeding method in which a solid phase is placed on the entire surface of the solution has been used, but the distance between the solid phases is large (it is impossible to achieve this), and the degree of supersaturation of the solution is large. Therefore, although this overseeding method has good uniformity in thin film growth, it is not suitable for buried deposition or thick film growth.
本発明の液相エピタキシャル成長法は高温において浴液
上に複数個の固相物質を載置する方法る得る。The liquid phase epitaxial growth method of the present invention involves placing a plurality of solid phase substances on a bath liquid at high temperatures.
飽和溶液を固相物質が存在する状態で降温してゆくと過
剰となった溶買は固相に析出する。この時溶液内の過飽
和度は固相近傍では′Ｏ”に近くなジ、同相から離れる
に従って大きくなる。同相物質が一個の場合は固相から
の距離の不均一性が大きく、距離の遠い部分も多く、過
飽和度は太きく不均一性も大きい。一方、固相物質が溶
液全面に存在する場合は固相からの距離が小６い部分が
多く距離の不均一性は小さい。従って、過飽）Ｉ］度は
小さく不均一性も小さい。本発明の様に数個の固相物質
が溶液上に存在する場合は固相物質が一個の場合より溶
液内の固相からの距離の不均一性が小さく、過飽和度の
不均一性も小さい。父、溶液全面に固相物質が存在する
場合より溶液内の固相からの距離が太き（なるため過飽
和度が大きく出来る。When the temperature of a saturated solution is lowered in the presence of a solid phase substance, excess molten metal precipitates into the solid phase. At this time, the degree of supersaturation in the solution is near the solid phase, and increases as you move away from the same phase.If there is only one same phase substance, there is great non-uniformity in the distance from the solid phase, and in the farthest part The degree of supersaturation is large, and the non-uniformity is large.On the other hand, when the solid phase substance is present over the entire surface of the solution, there are many areas where the distance from the solid phase is small6, and the non-uniformity of the distance is small. The degree of saturation is small and the heterogeneity is small. When several solid phase substances are present on the solution as in the present invention, the distance from the solid phase in the solution is less uniform than when there is only one solid phase substance. The uniformity is small, and the non-uniformity of the degree of supersaturation is also small.The distance from the solid phase in the solution is larger (because the distance from the solid phase in the solution becomes larger) than when the solid phase substance is present over the entire surface of the solution.
矢に、本発明について図面を参照して説明する。 The present invention will now be described with reference to the drawings.
第１図は本発明の一実施例の縦断面図である。FIG. 1 is a longitudinal sectional view of an embodiment of the present invention.
一方第２図、第３図は従来の方法を説明する縦断面図で
ある。本実施例ではＩｎを溶媒としてＩｎＰの液相エピ
タキシャル成長させる方法を用いて説明する。On the other hand, FIGS. 2 and 3 are longitudinal sectional views illustrating the conventional method. In this embodiment, a method of liquid phase epitaxial growth of InP using In as a solvent will be described.
カーボンボートの浴槽１１，２１，３１にＩｎ １２９
２２．３２及びＩｎＰ結晶１３，２３，３３ｔ−入れ、
カーボンの押し蓋１４，２４，３４ｔ”セットし、昇温
する。In 129 in carbon boat bathtubs 11, 21, 31
22.32 and InP crystal 13, 23, 33t-put,
Set the carbon press lids 14, 24, and 34t'' and raise the temperature.
一定時間高温保持し、Ｉｍ溶液１２，２２，３２中にＬ
ｍＰ を充分浴力１し込む。この保持温度でＩｎ中溶解
する量よジ充分多い■ｍＰ結晶１３．２３．３３をあら
かじめ仕込んでおいた場合、高温保持の平衡状態におい
て固相のＩｎＰ結晶１３，２３．３３がＩｎ ｆｔ３Ｗ
１２，２２．３２上に浮いた形の二相状態が実現出来る
。この状態小リポート全体を降温すると１．溶液１２，
２２．３２中で過剰となったＰＦｉ固相のＩｎＰ 結晶
１３，２３．３３に析出する。さらに一定の速度で降温
を続けると、Ｉｎ溶液１２，２２゜３２中Ｐの過飽和度
はＩｎ溶液１２，２２．３２中で固相のＩｎ溶液１２，
２２．３２中で固相の１．Ｐ 結晶１３，２３．３３か
らの距離で決まる分布を持つようになる。この状態で基
板ホルダー１５．２５．３５上に載置されたＩｎＰ 基
板１６．２（５，３６ｉＩｎ溶液１２，２２．３２下部
に移動させると、Ｉｎり 基板１６．２６．３６上にエ
ピタキシャル成長が行われる。Maintain the high temperature for a certain period of time, and add L to Im solution 12, 22, 32.
Pour enough mP into the bath. If mP crystals 13, 23, 33 which are sufficiently larger than the amount dissolved in In at this holding temperature are charged in advance, the solid phase InP crystals 13, 23, 33 will become In ft3W in the equilibrium state of holding at high temperature.
A two-phase state floating above 12, 22, and 32 can be realized. If you lower the temperature of this small state report as a whole, 1. solution 12,
Excess PFi solid phase InP in 22.32 is precipitated on crystals 13 and 23.33. If the temperature is further lowered at a constant rate, the degree of supersaturation of P in the In solution 12,22°32 becomes as follows:
22.1 of the solid phase in 32. It comes to have a distribution determined by the distance from P crystals 13, 23, and 33. In this state, when the InP substrate 16.2 (5,36iIn solution 12, 22.32) placed on the substrate holder 15.25.35 is moved to the lower part, epitaxial growth is performed on the InP substrate 16.26.36. be exposed.
第２図にあるようにＩｎ＃液２液上２上ｎＰ 結晶２３
が１ ｊｌ！ｉｌである場合は固相からの距離の不均一
性が大きく溶液中の過飽和度の不均一性が大きくなり、
基板上への成長速度の不均一性が犬さくなる。４＄３図
をこめるようにＩｎＰ 結晶３３がＩｎ溶液３２全面に
ある場合は固相からの距離の不均一性は小さくなるが、
固相からの距離が小さい為、過飽和度が大きく出来ず、
成長速度が大さく出来ない。一方、第１図にあるように
ＩｎＰ 結晶１３が複数個Ｉｎ溶液１２上にある場合は
、１個の場合と比較し固相からの距離の不均一性が減少
し。As shown in Figure 2, nP crystal 23 on In# liquid 2 liquid 2
1 jl! In the case of il, the distance from the solid phase is highly non-uniform, and the supersaturation degree in the solution is highly non-uniform.
The non-uniformity of the growth rate on the substrate is exacerbated. 4$3 As shown in the figure, if the InP crystal 33 is on the entire surface of the In solution 32, the non-uniformity of the distance from the solid phase will be small, but
Because the distance from the solid phase is small, the degree of supersaturation cannot be increased,
The growth rate cannot be increased. On the other hand, when a plurality of InP crystals 13 are present on the In solution 12 as shown in FIG. 1, the non-uniformity of the distance from the solid phase is reduced compared to the case where there is only one InP crystal 13.
過飄和度の不均一性も減少する。又固相が全面にある場
合と比較し、固相からの距離が大きく出来るため、溶液
の過飽和度が大きく出来、成長速度が大きく出来る利点
がある。The non-uniformity of the degree of overabundance is also reduced. Furthermore, compared to the case where the solid phase is on the entire surface, since the distance from the solid phase can be increased, there is an advantage that the degree of supersaturation of the solution can be increased and the growth rate can be increased.
〔発明の効果〕
以上説明したように本発明ａ、１．溶液上に複数個のＩ
ｎＰ 結晶を載置することｌこより、Ｉｎ浴液の過飽和
度の不均一性が改善され、従ってＩｎＰ基板への成長速
度の不均一性も少なくなり、成長速度も所要のｔｌｉ［
を得ることが出来る効果がある。[Effects of the Invention] As explained above, the present invention a, 1. Multiple I on the solution
By placing the nP crystal, the non-uniformity of the supersaturation degree of the In bath solution is improved, and therefore the non-uniformity of the growth rate on the InP substrate is reduced, and the growth rate is also maintained at the required level.
It has the effect of allowing you to obtain the following.
この実施例では工１溶液を用いたＩｎＰのエピタキシャ
ル成長について述べたが、Ｉｎ溶液を用いたＩｎＧａＡ
ｓ＊ＩｎＧａＡｓＰ 等の三元、四元のエシ
ピタキシャル成長についても同様の効果があるこは明ら
かである。又Ｇａ溶液を用いたＧａＡｔ、ｅＡＩＧａＡ
ｓ等のエピタキシャル成長についても同様の効果がある
ことは明らかである。In this example, epitaxial growth of InP using an In solution was described, but InGaA using an In solution was described.
It is clear that the epitaxial growth of ternary and quaternary materials such as s*InGaAsP has similar effects. Also, GaAt using Ga solution, eAIGaA
It is clear that the epitaxial growth of s etc. has similar effects.
第１図は本発明の一実施例を説明する縦断面図。
第２図、第３図は従来の方法の例を説明する縦断面図で
ある。
１１．２１．３１・・・・・・カーボン浴槽、１２，２
２，３２・・・・・・Ｉｎ溶液、１３，２３，３３・・
・・・・ＩｎＥ’ 結晶、１４．２４，３４・・・・・
・カーボン押し蓋、１５，２５，３５・・・・・・基板
ホルダー、１６，２６，３６・・・・・・基板。
井２１ｉＪ
算３ 頂FIG. 1 is a longitudinal sectional view illustrating an embodiment of the present invention. FIGS. 2 and 3 are longitudinal sectional views illustrating an example of a conventional method. 11.21.31...Carbon bathtub, 12,2
2,32...In solution, 13,23,33...
...InE' crystal, 14.24,34...
・Carbon press lid, 15, 25, 35...Substrate holder, 16, 26, 36...Substrate. I21iJ Calculation 3 Top
Claims (1)
タキシャル成長を行うことを特徴とする液相成長方法。A liquid phase growth method characterized by performing liquid phase epitaxial growth with a plurality of solid phase substances placed on a solution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60022416A JPS61181124A (en) | 1985-02-07 | 1985-02-07 | Method for liquid-phase growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60022416A JPS61181124A (en) | 1985-02-07 | 1985-02-07 | Method for liquid-phase growth |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61181124A true JPS61181124A (en) | 1986-08-13 |
Family
ID=12082060
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60022416A Pending JPS61181124A (en) | 1985-02-07 | 1985-02-07 | Method for liquid-phase growth |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61181124A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS48102779A (en) * | 1972-04-10 | 1973-12-24 | ||
| JPS50156873A (en) * | 1974-06-06 | 1975-12-18 | ||
| JPS5742211A (en) * | 1980-08-28 | 1982-03-09 | Nippon Gakki Seizo Kk | Feedback amplifier |
-
1985
- 1985-02-07 JP JP60022416A patent/JPS61181124A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS48102779A (en) * | 1972-04-10 | 1973-12-24 | ||
| JPS50156873A (en) * | 1974-06-06 | 1975-12-18 | ||
| JPS5742211A (en) * | 1980-08-28 | 1982-03-09 | Nippon Gakki Seizo Kk | Feedback amplifier |
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