JPS61180424A - Vapor phase epitaxial growth equipment - Google Patents

Vapor phase epitaxial growth equipment

Info

Publication number
JPS61180424A
JPS61180424A JP2033585A JP2033585A JPS61180424A JP S61180424 A JPS61180424 A JP S61180424A JP 2033585 A JP2033585 A JP 2033585A JP 2033585 A JP2033585 A JP 2033585A JP S61180424 A JPS61180424 A JP S61180424A
Authority
JP
Japan
Prior art keywords
susceptor
material gas
raw material
substrate
epitaxial growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2033585A
Other languages
Japanese (ja)
Inventor
Nobuyasu Hase
長谷　亘康
Mototsugu Ogura
基次 小倉
Yuzaburo Ban
雄三郎 伴
Motoji Morizaki
森崎　元司
Yasuhito Takahashi
康仁 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2033585A priority Critical patent/JPS61180424A/en
Publication of JPS61180424A publication Critical patent/JPS61180424A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides

Abstract

PURPOSE:To make crystal growth easy forming smooth laminar flow of material gas by a method wherein the feed port of material gas fed to the central part of furnace core pipe is opened conically while the end of carbon susceptor is formed into conical or polypyramidal shape. CONSTITUTION:A material gas feed pipe 8 is composed of a conical opening provided with numerous through holes 10 in parallel with the direction of flowing gas. A columnar carbon susceptor 7 with conical end is provided opposing to the opening of feed pipe 8. A substrate 5 is arranged on the end of susceptor 7. The material gas from the feed pipe 8 expanding almost symmetrically with respect to the central axis of furnace core pipe 4 therein is mixed with carrier gas passing through holes 10 to flow smoothly along the shape of susceptor 7. Through these procedures, homogeneous epitaxial crystal may be grown easily upon the surface of substrate 5.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、各種のエピタキシャル結晶薄膜を利用したデ
バイス作製上、重要な位置を占める気相エピタキシャル
成長装置の改良に関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to an improvement in a vapor phase epitaxial growth apparatus which plays an important role in manufacturing devices using various epitaxial crystal thin films.

従来の技術 気相エピタキシャル成長装置のエピタキシャル成長室の
加熱機構は、通常急熱急冷が容易に実現出来る高周波加
熱方式が多く用いられている０第２図は、横型の一般的
な気相エピタキシャル成長装置の加熱部分のみを示した
概略図で、１はカーボンサセプター、２はカーボンサセ
プター１を加熱するだめの高周波コイル、３はカーボン
サセプター１の温度測定のための熱電対、４は炉芯管、
６はエピタキシャル成長をさせるための基板、６はエピ
タキシャル成長のための原料ガス供給口である。原料ガ
ス供給口６から供給された原料ガスは高周波加熱により
高温に加熱された基板６上で、分解析出し、基板６上に
エピタキシャル成長することになる。このような気相エ
ピタキシャル成長に際して、最も重要な成長条件の１つ
に原料ガスの流れの問題がある。この原料ガスの流れは
、原料ガスを含むキャリアガス、即ち炉芯管内を流れ、
るガス全体の流量、サセプター４の温度周辺壁面の形状
、ガス流の障害物の存在の有無等によって著るしく変化
する。従って、基板上に形成されるエピタキシャル結晶
の各種特性、例えば膜厚、原材料の混入比、電気的・光
学的緒特性等、は上記の各種成長条件によって左右され
る許りでなく、極端な場合はエピタキシャル結晶の成長
が不可能な場合も珍らしくない。Conventional technology The heating mechanism of the epitaxial growth chamber of a vapor phase epitaxial growth apparatus is usually a high frequency heating method that can easily achieve rapid heating and cooling.0 Figure 2 shows the heating mechanism of a typical horizontal vapor phase epitaxial growth apparatus. This is a schematic diagram showing only the parts, 1 is a carbon susceptor, 2 is a high frequency coil for heating the carbon susceptor 1, 3 is a thermocouple for measuring the temperature of the carbon susceptor 1, 4 is a furnace core tube,
6 is a substrate for epitaxial growth, and 6 is a raw material gas supply port for epitaxial growth. The raw material gas supplied from the raw material gas supply port 6 is separated and deposited on the substrate 6 heated to a high temperature by high frequency heating, and is epitaxially grown on the substrate 6. In such vapor phase epitaxial growth, one of the most important growth conditions is the flow of source gas. The flow of this raw material gas flows through a carrier gas containing the raw material gas, that is, inside the furnace core tube,
The temperature varies significantly depending on the flow rate of the entire gas, the shape of the surrounding wall surface, the temperature of the susceptor 4, the presence or absence of obstacles to the gas flow, etc. Therefore, various properties of the epitaxial crystal formed on the substrate, such as film thickness, mixing ratio of raw materials, electrical and optical characteristics, etc., cannot be influenced by the various growth conditions mentioned above, and in extreme cases It is not uncommon for epitaxial crystal growth to be impossible.

発明が解決しようとする問題点 上記の結果をふまえて、気相法による良好なエピタキシ
ャル結晶の成長には、炉芯管４中を流れるガスの流れに
乱流を生じしむるような炉芯管内の構造は極力避けて、
基板面上にスムースな層流を形成することが重要である
。本発明はガスのスムースな流れ、基板面上での層流形
成に関するカーボンサセプター並びにガス供給口の構造
に係るものである。Problems to be Solved by the Invention Based on the above results, in order to grow a good epitaxial crystal by the vapor phase method, it is necessary to use a method in the furnace core tube 4 that would cause turbulence in the gas flow flowing through the furnace core tube 4. Avoid the structure of
It is important to form a smooth laminar flow on the substrate surface. The present invention relates to the structure of a carbon susceptor and a gas supply port that are related to smooth gas flow and formation of laminar flow on a substrate surface.

問題点を解決するための手段 本発明では、原料の流れに対して、前記原料ガスの流れ
の途上に急激な変化を起させるような障害物をなくし、
ガスの流れを自然にゆるやかな変化に導くと共に、原料
ガスの供給口および基板設置台を兼ねたカーボンサセプ
タが、炉芯管の中心軸に対して軸対称となる様に、炉芯
管の中心部に導入された原料ガスの供給口を円椎状に開
くと共にカーボンサセプターを、原料ガスの供給口の形
状と同様な円椎状もしくは多角椎状の先端部を有する構
造にすることによりスムースな原料ガスの層流を形成す
る。Means for Solving the Problems In the present invention, obstacles that cause sudden changes in the flow of the raw material gas are eliminated,
In addition to guiding the gas flow to a gradual change naturally, the carbon susceptor, which also serves as the raw material gas supply port and substrate installation stand, is placed at the center of the furnace core tube so that it is axially symmetrical to the center axis of the furnace core tube. The supply port for the raw material gas introduced into the section is opened in a cylindrical shape, and the carbon susceptor is structured to have a cylindrical or polygonal vertebra-like tip similar to the shape of the raw material gas supply port. Forms a laminar flow of raw material gas.

作　　用 原料ガス供給口から導入された原料ガスは炉芯管内部で
、炉芯管の中心軸に対してはソ対称的に拡散し、流れを
形成する。この際、流れのいずれかの部分に従来法にみ
られるような流れに対する障害物が存在すれば、ガスの
流れが、その部分で邪魔されて、乱れた流れを発生する
ことになるが、本発明によるように急激な遮蔽効果を起
す部分をなくし、ガスの流れに沿ってスムースに変化す
る軸対称構造をもたせることによって急激なガス流変化
を起すことなく基板上に原料ガスを誘導する。The raw material gas introduced from the working raw material gas supply port diffuses inside the furnace core tube symmetrically with respect to the central axis of the furnace core tube, forming a flow. At this time, if there is an obstacle to the flow as seen in conventional methods in any part of the flow, the gas flow will be obstructed at that part and a turbulent flow will occur. According to the invention, by eliminating parts that cause sudden shielding effects and providing an axially symmetrical structure that changes smoothly along the gas flow, source gas is guided onto the substrate without causing sudden changes in gas flow.

実施例 第１図＜ａ）は本発明の実施例におけるエピタキシャル
成長装置、特にそのエピタキシャル結晶の成長室で、７
はカーボンサセプター、８は原料ガスの供給管である。Embodiment FIG. 1<a) shows an epitaxial growth apparatus in an embodiment of the present invention, in particular, an epitaxial crystal growth chamber thereof.
8 is a carbon susceptor, and 8 is a raw material gas supply pipe.

９は原料ガスどは別の供給管から供給されているキャリ
アガスで、原料ガスの供給管先端のジョ′ウゴ状に開い
た壁面にもうけられた多数のキャリアガス用貫通孔１ｏ
を通してサセプター７の方へ流れる構造になっている。Reference numeral 9 denotes a carrier gas that is supplied from a separate supply pipe to the raw material gas, and there are many carrier gas through holes 1o formed in the funnel-shaped wall at the tip of the raw material gas supply pipe.
The structure is such that the water flows through the susceptor 7 toward the susceptor 7.

１１はサセプターを炉芯管の中心部に設置するだめの石
英製サセプター支持台である。Reference numeral 11 denotes a susceptor support stand made of quartz for installing the susceptor in the center of the furnace core tube.

第１図（ｂ）は原料ガス供給管８の原料ガス噴出口附近
の詳細図で、円椎状に開いたガスの出口近辺の円椎面上
には多数のキャリアガスを通すためのキャリアガス用貫
通孔１ｏが炉芯管４にはソ平行に設けられている。FIG. 1(b) is a detailed view of the vicinity of the raw material gas outlet of the raw material gas supply pipe 8. On the cylindrical surface near the gas outlet opened in a cylindrical shape, there is a carrier gas for passing a large number of carrier gases. A through hole 1o is provided in the furnace core tube 4 in parallel to the furnace core tube 4.

上記のように構成されたエピタキシャル結晶成長装置で
は、原料ガス供給管８から供給された原料ガスは、炉芯
管中で炉芯管の中心軸に対してはソ対称的に広がると共
に、キャリアガス用貫通孔１０を通って流れてくるキャ
リアガスと混合してカーボンサセプター７の形状に沿っ
てスムースな流れを形成して、基板５の面上を流れるこ
とになる。従って基板６の面上では均質なエピタキシャ
ル結晶の成長が容易に行うことが出来る０なお、以上の
説明では具体的ガスの種類等にふれていなかったが、例
えばＧａＡｓ基板上へのＡｌＧａＡｓ＋エピタＡｓ中ル
結晶の有機金属気相エピタキシャル成長を行う場合には
原料ガス供給管８から水素ガスでもってバブリングを行
った水素ガストＴ　ＭＧ　（Ｇａ（ＣＨ３）３）　、　
Ｔ　ＭＡ　Ｉ　（ＡＩ（ＣＨ３）３）の所定の混合ガス
を、９で示されているキャリアガス中には所定量のＡ１
１Ｈ３を混合した状態で炉芯管中に送りこむと、７００
〜ｓ　ｏ　ｏ　”Ｃに加熱された基板６上に良好なＡ　
Ｉ　ＧａＡｔｘエピタキシャル結晶は容易に形成するこ
とが出来る。In the epitaxial crystal growth apparatus configured as described above, the raw material gas supplied from the raw material gas supply pipe 8 spreads in the furnace core tube symmetrically with respect to the central axis of the furnace core tube, and the carrier gas It mixes with the carrier gas flowing through the carbon through-hole 10 to form a smooth flow along the shape of the carbon susceptor 7, and flows over the surface of the substrate 5. Therefore, a homogeneous epitaxial crystal can be easily grown on the surface of the substrate 6. Although the above explanation does not mention the specific types of gas, for example, in AlGaAs+epitaxial As on a GaAs substrate, When carrying out organic metal vapor phase epitaxial growth of crystals, hydrogen gas TMG (Ga(CH3)3), which is bubbled with hydrogen gas from the raw material gas supply pipe 8, is used.
A predetermined mixed gas of TMA I (AI(CH3)3) is mixed with a predetermined amount of A1 in the carrier gas indicated by 9.
When 1H3 is mixed and fed into the furnace core tube, 700
A good A on the substrate 6 heated to ~s o o ”C
I GaAtx epitaxial crystals can be easily formed.

発明の効果 以上述べたように本発明の気相エピタキシャル成長装置
を用いることによって、基板全面にわたり均質なエピタ
キシャル結晶の成長を容易にすると共に、縦型の場合に
は角椎の面の数だけの基板設置が可能となり、１度に多
量のエピタキシャル結晶の成長が出来る。Effects of the Invention As described above, by using the vapor phase epitaxial growth apparatus of the present invention, it is possible to easily grow homogeneous epitaxial crystals over the entire surface of the substrate, and in the case of a vertical type, the number of substrates equal to the number of faces of the angular vertebrae can be grown. It is now possible to install a large amount of epitaxial crystal at one time.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図（ａ）は本発明の一実施例におけるエピタキシャ
ル成長装置のエピタキシャル結晶成長部の構成を示す図
、第１図（ｂ）は同装置の原料ガス供給管図 の構造を示す＼第２図は従来のエピタキシャル成長装置
の構成を示す図である。 ７・・・・・・カーボンサセプター、８・・・・・・原
料ガス供給管、１ｏ・・・・・・キャリアガス用貫通孔
、１１・・・・・・サセプター支持台。 代理人の氏名　弁理士　中　尾　敏　男　ほか１名第１
図FIG. 1(a) is a diagram showing the structure of the epitaxial crystal growth section of an epitaxial growth apparatus in an embodiment of the present invention, and FIG. 1(b) is a diagram showing the structure of the raw material gas supply pipe diagram of the same apparatus\FIG. 2 1 is a diagram showing the configuration of a conventional epitaxial growth apparatus. 7... Carbon susceptor, 8... Raw material gas supply pipe, 1o... Through hole for carrier gas, 11... Susceptor support stand. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
figure

Claims (2)

【特許請求の範囲】[Claims] （１）１端が円椎状の開口部とその円椎面上に設けられ
たガスの流れと平行な多数の小孔とをもった原料ガス供
給管と、この原料ガス供給管の開口部に対向して設けら
れ先端部が円椎状をした円柱サセプタから成るエピタキ
シャル結晶成長室を有する気相エピタキシャル成長装置
。(1) A raw material gas supply pipe with a cylindrical opening at one end and a number of small holes parallel to the gas flow provided on the cylindrical surface, and the opening of this raw material gas supply pipe. A vapor phase epitaxial growth apparatus having an epitaxial crystal growth chamber comprising a cylindrical susceptor with a cylindrical tip disposed opposite to the susceptor. （２）先端部が円椎状をした円柱サセプタの円椎面の一
部が平面状をなし、基板の密着設置が可能なサセプタを
有する特許請求の範囲第１項記載の気相エピタキシャル
成長装置。(2) The vapor phase epitaxial growth apparatus according to claim 1, wherein the susceptor has a cylindrical susceptor having a cylindrical tip, and a part of the vertebral surface of the susceptor is planar, allowing the substrate to be placed in close contact with the susceptor.
JP2033585A 1985-02-05 1985-02-05 Vapor phase epitaxial growth equipment Pending JPS61180424A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2033585A JPS61180424A (en) 1985-02-05 1985-02-05 Vapor phase epitaxial growth equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2033585A JPS61180424A (en) 1985-02-05 1985-02-05 Vapor phase epitaxial growth equipment

Publications (1)

Publication Number Publication Date
JPS61180424A true JPS61180424A (en) 1986-08-13

Family

ID=12024265

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2033585A Pending JPS61180424A (en) 1985-02-05 1985-02-05 Vapor phase epitaxial growth equipment

Country Status (1)

Country Link
JP (1) JPS61180424A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4993360A (en) * 1988-03-28 1991-02-19 Kabushiki Kaisha Toshiba Vapor growth apparatus having a diffuser section containing a flow regulating member
US5275686A (en) * 1991-09-25 1994-01-04 University Of New Mexico Radial epitaxial reactor for multiple wafer growth
US5391232A (en) * 1985-12-26 1995-02-21 Canon Kabushiki Kaisha Device for forming a deposited film
US6059885A (en) * 1996-12-19 2000-05-09 Toshiba Ceramics Co., Ltd. Vapor deposition apparatus and method for forming thin film
EP1413644A2 (en) * 2002-10-24 2004-04-28 Sony Corporation Thin-film deposition device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5391232A (en) * 1985-12-26 1995-02-21 Canon Kabushiki Kaisha Device for forming a deposited film
US4993360A (en) * 1988-03-28 1991-02-19 Kabushiki Kaisha Toshiba Vapor growth apparatus having a diffuser section containing a flow regulating member
US5275686A (en) * 1991-09-25 1994-01-04 University Of New Mexico Radial epitaxial reactor for multiple wafer growth
US6059885A (en) * 1996-12-19 2000-05-09 Toshiba Ceramics Co., Ltd. Vapor deposition apparatus and method for forming thin film
EP1413644A2 (en) * 2002-10-24 2004-04-28 Sony Corporation Thin-film deposition device
EP1413644A3 (en) * 2002-10-24 2006-08-16 Sony Corporation Thin-film deposition device

Similar Documents

Publication Publication Date Title
JPS61180424A (en) Vapor phase epitaxial growth equipment
JPH01125923A (en) Vapor growth apparatus
EP0378543A1 (en) Gas injector apparatus for chemical vapor deposition reactors.
US3621812A (en) Epitaxial deposition reactor
JPS61180425A (en) Vapor phase epitaxial growth equipment
EP0931186B1 (en) A device for epitaxially growing objects and method for such a growth
JP2845105B2 (en) Thin film vapor deposition equipment
Davies et al. Metal-organic chemical vapour deposition (MOCVD) of compound semiconductors. Part 1.—Optimisation of reactor design for the preparation of ZnSe
JP3867616B2 (en) Semiconductor manufacturing apparatus and method
JPH026389A (en) Apparatus for vapor growth of semiconductor thin film
JPH0682619B2 (en) Semiconductor growth equipment
JPH0773099B2 (en) Semiconductor vapor deposition equipment
JPS6071596A (en) Vapor-phase growth apparatus
JP2709182B2 (en) Vapor phase growth apparatus and vapor phase growth control method
JPS59111323A (en) Vapor phase growth device
JPH08335557A (en) Vapor-phase epitaxial growth apparatus
JPS6153197A (en) Crystal growth device
JPH0691012B2 (en) Semiconductor thin film vapor phase growth equipment
JPH07297132A (en) Vapor phase epitaxial growth system
JPH03106039A (en) Gas mixing device and vapor phase epitaxial growth device using that
JPH03194918A (en) Apparatus for epitaxial growth
JPS6266621A (en) Vapor growth apparatus
JPS62260315A (en) Semiconductor bonding agent epitaxial method
JPS6177696A (en) Vapor growth device of crystal
JPS61242012A (en) Vapor-phase growth device