JPS61170743A - Production of photomask blank - Google Patents

Production of photomask blank

Info

Publication number
JPS61170743A
JPS61170743A JP60011817A JP1181785A JPS61170743A JP S61170743 A JPS61170743 A JP S61170743A JP 60011817 A JP60011817 A JP 60011817A JP 1181785 A JP1181785 A JP 1181785A JP S61170743 A JPS61170743 A JP S61170743A
Authority
JP
Japan
Prior art keywords
chromium nitride
photomask blank
target
thin film
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60011817A
Other languages
Japanese (ja)
Other versions
JPH0414340B2 (en
Inventor
Takehiro Taihichi
対比地　武博
Hiroaki Noda
博明 野田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toppan Inc
Original Assignee
Toppan Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toppan Printing Co Ltd filed Critical Toppan Printing Co Ltd
Priority to JP60011817A priority Critical patent/JPS61170743A/en
Publication of JPS61170743A publication Critical patent/JPS61170743A/en
Publication of JPH0414340B2 publication Critical patent/JPH0414340B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof

Abstract

PURPOSE:To make the formation of a stable and secure light shielding film possible by using chromium nitride as a target or evaporating source. CONSTITUTION:The chromium nitride as a target is sputtered to a glass substrate for a photomask in an argon atmosphere by a DC magnetron or high-frequency power source. The sputtering conditions are set at, for example, 2X10<-3>Torr total pressure, 3A discharge current and 470 discharge voltage and the thin film of the chromium nitride is formed if the chromium nitride is sputtered no the glass substrate in the atmosphere of the gaseous argon under such conditions. The photomask blank having the high transmittivity of visible light as compared to a thin film consisting of chromium oxide is obtd. A uniform and sharp pattern having no chipping is obtd. if the pattern is etched by such photomask blank.

Description

【発明の詳細な説明】 （産業上の利用分野〕 本発明はフォトマスクブランクの製造法に係り。[Detailed description of the invention] (Industrial application field) The present invention relates to a method for manufacturing a photomask blank.

特にスパッタリングまたは真空蒸着法により透明基板上
に窒化クロムの強固な薄膜層を形成するシースルーマス
クブランクの製造法に関する。In particular, the present invention relates to a method of manufacturing a see-through mask blank in which a strong thin film layer of chromium nitride is formed on a transparent substrate by sputtering or vacuum evaporation.

（従来技術） ＩＣやＬＳＩ等の半導体集積回路装置の製造など、種々
の広範囲な用途に用いられているフォトマスクの中で、
マスクパターンを半透明層で形成したシースルーマスク
と呼ばれるものがある。このシースルーマスクは１通常
の遮光パターンを有するマスクパターンによっては、遮
光パターンと位置合せマークとが重なった場合に位置合
せが困難となることから、遮光パターンとして、可視光
は通すがレジストを硬化させる近紫外線は通さない半透
明層を用いたものである。(Prior Art) Among photomasks used in a wide variety of applications such as manufacturing semiconductor integrated circuit devices such as ICs and LSIs,
There is a type of mask called a see-through mask in which a mask pattern is formed from a semi-transparent layer. This see-through mask 1.Depending on the mask pattern that has a normal light-shielding pattern, alignment becomes difficult when the light-shielding pattern and the alignment mark overlap, so as a light-shielding pattern, visible light passes through but the resist is hardened. It uses a semi-transparent layer that does not allow near-ultraviolet light to pass through.

上述のシースルーブランクとしては特開昭５７−１４７
６３４号によって提案されたように、透明基板上に窒素
を含む雰囲気中でスパッタリングなどの手段により、ク
ロムの窒化物からなる薄膜を形成したものが知られてい
る。The above-mentioned see-through blank is JP-A-57-147.
As proposed in No. 634, a thin film made of chromium nitride is known to be formed on a transparent substrate by means such as sputtering in an atmosphere containing nitrogen.

しかしながら、この提案によって形成された遮光膜は、
ある程度可視光の透過率はよ（なるが。However, the light shielding film formed by this proposal is
The transmittance of visible light is good to a certain extent.

膜の品質が不安定であり、例えば透明基板に対する膜の
密着強度が弱く、膜の脱落が起こる等の問題があった。The quality of the film is unstable, for example, the adhesion strength of the film to the transparent substrate is weak, resulting in problems such as the film falling off.

（発明の目的） 本発明は上記の事情に鑑みてなされたもので。(Purpose of the invention) The present invention has been made in view of the above circumstances.

安定した強固な遮光膜を形成できるフォトマスクブラン
クの製造法を提供することを目的とするものである。The object of the present invention is to provide a method for manufacturing a photomask blank that can form a stable and strong light-shielding film.

（発明の構成） すなわち１本発明は透明基板上にスパッタリングまたは
真空蒸着法により遮光膜を形成するフォトマスクブラン
クの製造法において、窒化クロムをターゲットもしくは
蒸発源とすることを特徴とする。(Structure of the Invention) That is, one aspect of the present invention is a method for manufacturing a photomask blank in which a light-shielding film is formed on a transparent substrate by sputtering or vacuum evaporation, in which chromium nitride is used as a target or evaporation source.

（発明の詳述） スパッタリングにより遮光膜を形成するには、アルゴン
ガスなどの不活性ガスを真空室内に導入して１０〜１０
Ｔｏｒｒ程度の真空条件で行なう。(Detailed Description of the Invention) To form a light shielding film by sputtering, an inert gas such as argon gas is introduced into a vacuum chamber and
This is carried out under vacuum conditions of approximately Torr.

また真空蒸着法の場合は、上記より高い真空条件で電子
ビーム加熱方式で行なうのが艮い。In the case of vacuum evaporation, it is best to use an electron beam heating method under higher vacuum conditions than the above.

いずれにしても１本発明では、ターゲットおよび蒸発源
は一定の原子比を有する窒化クロム化合物を用いること
になるので、蒸着途中でクロムを窒素と化合させる従来
方式と比べて、操作者による操作ミスや操作条件の微妙
な差異を生じることが少なく、故に得られる遮光膜の品
質は安定したものとなる。In any case, in the present invention, a chromium nitride compound having a fixed atomic ratio is used for the target and the evaporation source, so compared to the conventional method in which chromium is combined with nitrogen during evaporation, there is a possibility that operation errors by the operator will occur. The quality of the obtained light-shielding film is therefore stable.

（実施例） 以下、本発明に係るフォトマスクブランクの製造法の一
実施例につき説明する。(Example) Hereinafter, an example of the method for manufacturing a photomask blank according to the present invention will be described.

直流マグネトロンまたは高周波電源により、フォトマス
ク用ガラス基板にアルゴン雰囲気中で窒化クロムをター
ゲットとして種々の条件でスパッターした結果、下表に
示す条件においてガラス基板上に形成された窒化クロム
膜が非常に安定し強固になることを見出した。As a result of sputtering chromium nitride as a target on a photomask glass substrate in an argon atmosphere under various conditions using a DC magnetron or high-frequency power supply, the chromium nitride film formed on the glass substrate was extremely stable under the conditions shown in the table below. I found that it became stronger.

上記のスパッター条件によってアルゴンガスの雰囲気中
でガラス基板上に窒化クロムをスパッターすると、窒化
クロムの薄膜が形成され、この薄膜は安定した強固なも
のである。しかも酸化クロ　　−ムの薄膜と比較して可
視光の透過率も高い良好なフォトマスクブランクが得ら
れる。このフォトマスクブランクによってパターンをエ
ツチングすると、均一でシャープな、かけや割れのない
パターンが得られる。When chromium nitride is sputtered onto a glass substrate under the above sputtering conditions in an argon gas atmosphere, a thin film of chromium nitride is formed, and this thin film is stable and strong. Furthermore, a good photomask blank having a higher visible light transmittance than a chromium oxide thin film can be obtained. When a pattern is etched using this photomask blank, a uniform, sharp pattern without chips or cracks can be obtained.

（発明の効果） 上述のように本発明によれば、ターゲットもしくは蒸発
源を窒化クロムの一定した原子比の化合物ヲ用いるから
、スパッターあるいは真空蒸着して得られるフォトマス
クブランクの遮光膜は品質的に安定して密着強度の高い
ものとなり、取扱いし易いものとすることができる。(Effects of the Invention) As described above, according to the present invention, since a compound of chromium nitride with a constant atomic ratio is used as the target or evaporation source, the light shielding film of the photomask blank obtained by sputtering or vacuum evaporation has a high quality. It is stable and has high adhesion strength, and can be easily handled.

Claims (1)

【特許請求の範囲】[Claims] （１）透明基板上にスパッタリングまたは真空蒸着法に
より遮光膜を形成するフォトマスクブランクの製造法に
おいて、窒化クロムをターゲットもしくは蒸発源とする
ことを特徴とするフォトマスクブランクの製造方法。(1) A method for manufacturing a photomask blank in which a light-shielding film is formed on a transparent substrate by sputtering or vacuum evaporation, the method comprising using chromium nitride as a target or evaporation source.
JP60011817A 1985-01-25 1985-01-25 Production of photomask blank Granted JPS61170743A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60011817A JPS61170743A (en) 1985-01-25 1985-01-25 Production of photomask blank

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60011817A JPS61170743A (en) 1985-01-25 1985-01-25 Production of photomask blank

Publications (2)

Publication Number Publication Date
JPS61170743A true JPS61170743A (en) 1986-08-01
JPH0414340B2 JPH0414340B2 (en) 1992-03-12

Family

ID=11788345

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60011817A Granted JPS61170743A (en) 1985-01-25 1985-01-25 Production of photomask blank

Country Status (1)

Country Link
JP (1) JPS61170743A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05297570A (en) * 1992-04-20 1993-11-12 Toppan Printing Co Ltd Production of photomask blank
JPH083737A (en) * 1994-06-20 1996-01-09 Tosoh Corp Chromium nitride sputtering target

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5140874A (en) * 1974-10-04 1976-04-06 Toppan Printing Co Ltd
JPS57151945A (en) * 1981-03-17 1982-09-20 Hoya Corp Photomask blank and its manufacture

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5140874A (en) * 1974-10-04 1976-04-06 Toppan Printing Co Ltd
JPS57151945A (en) * 1981-03-17 1982-09-20 Hoya Corp Photomask blank and its manufacture

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05297570A (en) * 1992-04-20 1993-11-12 Toppan Printing Co Ltd Production of photomask blank
JPH083737A (en) * 1994-06-20 1996-01-09 Tosoh Corp Chromium nitride sputtering target

Also Published As

Publication number Publication date
JPH0414340B2 (en) 1992-03-12

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