JPS61166029A - Plasma etching equipment - Google Patents
Plasma etching equipmentInfo
- Publication number
- JPS61166029A JPS61166029A JP26116885A JP26116885A JPS61166029A JP S61166029 A JPS61166029 A JP S61166029A JP 26116885 A JP26116885 A JP 26116885A JP 26116885 A JP26116885 A JP 26116885A JP S61166029 A JPS61166029 A JP S61166029A
- Authority
- JP
- Japan
- Prior art keywords
- light
- plasma
- reaction
- etching
- reaction tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001020 plasma etching Methods 0.000 title claims description 15
- 238000006243 chemical reaction Methods 0.000 claims abstract description 57
- 238000005530 etching Methods 0.000 claims abstract description 36
- 239000013626 chemical specie Substances 0.000 claims abstract description 8
- 230000005281 excited state Effects 0.000 claims abstract description 3
- 230000007704 transition Effects 0.000 claims description 5
- 238000001514 detection method Methods 0.000 claims description 3
- 230000003321 amplification Effects 0.000 claims 2
- 238000003199 nucleic acid amplification method Methods 0.000 claims 2
- 239000013077 target material Substances 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 12
- 238000010521 absorption reaction Methods 0.000 abstract description 5
- 238000000862 absorption spectrum Methods 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 15
- 239000007789 gas Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000035484 reaction time Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007348 radical reaction Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】 本発明はプラズマエツチング装置に関する。[Detailed description of the invention] The present invention relates to a plasma etching apparatus.
周知のように、半導体装置、半導体集積回路装置等の製
造工程において、半導体基板（たとえば、シリコンから
なるウェーハ）上に設けた物質、たとえば、シリコン（
Ｓｉ）、二酸化シリコン（ＳｉＯ＊）、シリコンナイト
ライド（Ｓ ｔｌ Ｎ４ ） 、チタ：’ （Ｔ ｔ
） ｅクロＡ （（’ （） 、金（Ａｕ ） 、ホト
レジスト等を部分的Ｋ又は全体的に除去する方法とじて
、ガスプラズマを利用したプラズマエツチング方法が知
られて〜・る。As is well known, in the manufacturing process of semiconductor devices, semiconductor integrated circuit devices, etc., materials provided on a semiconductor substrate (e.g., a wafer made of silicon), such as silicon (
Si), silicon dioxide (SiO*), silicon nitride (S tl N4 ), tita:' (T t
) A plasma etching method using gas plasma is known as a method for partially or completely removing gold (Au), photoresist, etc.
ところで、このプラズマエツチング方法における物品（
ウェーハ）の反応処理終了時点（反応終点）を決定する
には、従来は目視によるウエーノ・表面の色変化やウェ
ーハ表面の被処理物質の膜厚による干渉縞の有無を判断
基準としたり、あるいは実験等のデータを基にして処理
条件を決めておき、タイマを用（・て反応時間を制御し
ている。By the way, the article (
In order to determine the end point of the reaction process (reaction end point) for a wafer (wafer), conventional methods have been based on visually observed changes in the color of the wafer surface, the presence or absence of interference fringes due to the thickness of the material to be processed on the wafer surface, or experimentally. Processing conditions are determined based on such data, and a timer is used to control the reaction time.
しかしこれらの方法では正確な反応終点を知ることがで
きず、作業性の低下および歩留の低下を来たしている。However, with these methods, it is not possible to accurately determine the end point of the reaction, resulting in decreased workability and yield.
丁なわち、反応管内に収容されるウェーハの数量の多少
圧よってエツチング速度（反応速度）は微妙に変化する
とともに、ウェーハの配置５ｉｌｉ！態によってエツチ
ング速度がはらつ〈。In other words, the etching rate (reaction rate) varies slightly depending on the number of wafers accommodated in the reaction tube, and the wafer placement. The etching speed varies depending on the condition.
このため、実験データ等によって処理時間を一定に設定
するタイマ方式は好ましくない。また、前記目視方式で
は内部の物品を観察することは難かしく、反応管の内壁
に最も近いクエーノ・を観察てることによって全体のエ
ツチング状態を推量することになる。For this reason, a timer method in which the processing time is set constant based on experimental data or the like is not preferable. Furthermore, in the visual inspection method, it is difficult to observe the internal objects, and the overall etching state can be estimated by observing the quaeno-container closest to the inner wall of the reaction tube.
この結果、従来方法ではエツチング過多やエツチング不
足が多く生じ易い。丁なわち、前者ではエツチングによ
って形成するパターンの各部の幅が狭くなったり、被処
理物質の下方に存在するウェーハの表層部等をもエツチ
ングしたりてることから、回路素子の特性劣化の原因と
なる。また、後者のエツチング不足では、再び反応管内
にウェーハを入れてエツチングを行なう必要があるが、
ウェーハを入れた後反応管内の反応状態を一定に設定す
るのに多くの時間を必要とてるため、極めて作業性が低
（・。As a result, the conventional method tends to cause excessive etching or insufficient etching. In other words, in the former case, the width of each part of the pattern formed by etching is narrowed, and the surface layer of the wafer that is below the material to be processed is also etched, which can cause deterioration in the characteristics of circuit elements. Become. In addition, in the case of insufficient etching in the latter case, it is necessary to put the wafer into the reaction tube again and perform etching.
It takes a lot of time to set the reaction state in the reaction tube to a constant level after loading the wafer, so work efficiency is extremely low (・.
以下余白
一方、反応終点を検出するために質量分析装置（マス・
スベクトロスコーフ）ヲ取す付ｆｆ、−ｆ−ツチング反
応時の反応管内の各物質を検出し、エツチング反応中か
否かを判別する装置もあるが、この装置は高価となると
ともに、装置全体が複雑となり、かつ測定操作も難しい
等の欠点がある。On the other hand, a mass spectrometer (mass spectrometer) is used to detect the end point of the reaction.
There is a device that detects each substance in the reaction tube during the etching reaction and determines whether or not the etching reaction is occurring, but this device is expensive and There are drawbacks such as the overall complexity and measurement operations being difficult.
したがって、本発明の目的は正確確実にプラズマエツチ
ングを行なうことができ、歩留の向上および作業の能率
化を図ることができるプラズマエツチング装置を提供す
ること罠ある。Therefore, an object of the present invention is to provide a plasma etching apparatus that can perform plasma etching accurately and reliably, and can improve yield and work efficiency.
以下実施例により本発明を説明する。The present invention will be explained below with reference to Examples.
第１図に本発明の前提となったプラズマエツチング装置
の概要図を示す。同図の中央には透明な石英管からなる
反応管１が示されて（・る。この反応管１は細長く、内
部にクエー／％２を載置する治具３を入れた後、左端を
透明な石英からなるキャップ４で密閉するようになって
いる。また、この反応管ＩＫは排気管５が連結され、こ
の排気管５はベント６を介して真空ポンプ７に接続され
ている。なお、この排気管５には真空度を計る真空計８
が取り付けられ、常に反応管１の内圧を知ることができ
るようになっている。FIG. 1 shows a schematic diagram of a plasma etching apparatus that is the premise of the present invention. In the center of the figure is shown a reaction tube 1 made of a transparent quartz tube.This reaction tube 1 is long and narrow, and after inserting a jig 3 for placing Qua/%2 inside, the left end is opened. The reaction tube IK is sealed with a cap 4 made of transparent quartz.An exhaust pipe 5 is connected to the reaction tube IK, and the exhaust pipe 5 is connected to a vacuum pump 7 via a vent 6. , this exhaust pipe 5 has a vacuum gauge 8 for measuring the degree of vacuum.
is attached so that the internal pressure of the reaction tube 1 can be known at all times.
また、前記反応管１にはこの反応管内に所定のガス、た
とえばフレオンガス（ＣＦ、）を供給する供給管９が接
続されている。この供給管９は一端はガスを保持するポ
ンベ１０に連結されるとともに、他端は３方に分岐しそ
れぞれ反応管１に連通している。なお、この供給管９の
途中には供給するガスの供給量を調整する流量調整パル
プ１１および供給するガスの流入を停止するストッパパ
ルプ１２が配設されている。Further, a supply pipe 9 is connected to the reaction tube 1 for supplying a predetermined gas, such as Freon gas (CF), into the reaction tube. One end of the supply pipe 9 is connected to a pump 10 that holds gas, and the other end branches into three directions, each of which communicates with the reaction tube 1. In the middle of the supply pipe 9, a flow rate adjusting pulp 11 for adjusting the amount of gas to be supplied and a stopper pulp 12 for stopping the inflow of the gas to be supplied are disposed.
また、前記反応管１の外周にはＲＦコイル１３が巻き付
けられるとともに、このＲＦコイル１３は高周波発振さ
せるＲＦ発生電源１４に接続されている。また、前記Ｒ
Ｆコイル１３ Ｋｉｔ ＲＦ−ｒッチング機構１５が取
り付けられ、このＲＦマツチング機構１５を調整するこ
とＫよって、反応管１内にプラズマ放電が生じるように
なっている。Further, an RF coil 13 is wound around the outer periphery of the reaction tube 1, and this RF coil 13 is connected to an RF generating power source 14 for generating high frequency oscillation. In addition, the R
F coil 13 Kit RF-r matching mechanism 15 is attached, and by adjusting this RF matching mechanism 15, plasma discharge is generated in reaction tube 1.
一方、この＠置には破線枠で示す側視系が設けられてい
る。丁なわち、エツチング反応時発生する弗素ラジカル
（Ｆ＊）、酸素ラジカル（０＊）。On the other hand, a side viewing system indicated by a broken line frame is provided at this @ position. In other words, fluorine radicals (F*) and oxygen radicals (0*) are generated during the etching reaction.
（０！＊）−弗化アルキルラジカル（ＣＦ、＊）および
弗化シリコンラジカル（Ｓ＋Ｆｓ”）−（ＳｔＦｔ＊）
等が励起状態（ラジカル）から安定状態に移行するとき
放出する光を検出するフォトセル等からなるディテクタ
（検出器）１６が反応管１の外側、たとえば、同図で示
すようにキャップ４の外側に対面して配設されて℃・る
。そして、このディテクタ１６からの信号はアンプ１７
を介して制御装置１８に伝えられるとともに、この信号
によって前記ＲＦ発生電源１４を自動的にコントロール
するようになって〜・る。また、前記アンプ１７には記
録計１９が連結され、ディテクタ１６によって検。(0!*)-alkyl fluoride radical (CF,*) and silicon fluoride radical (S+Fs”)-(StFt*)
A detector 16 consisting of a photocell or the like that detects the light emitted when a radical or the like transitions from an excited state (radical) to a stable state is mounted outside the reaction tube 1, for example, outside the cap 4 as shown in the figure. It is placed facing the ℃・ru. The signal from this detector 16 is then transmitted to an amplifier 17.
The RF generating power source 14 is automatically controlled by this signal. Further, a recorder 19 is connected to the amplifier 17 and detected by a detector 16.
出てる光の強度をグラフ化するようになっている。The intensity of the emitted light is graphed.
つぎ罠、上記装置を用〜・たプラズマエツチング方法に
つ〜・て説明する。まず、反応管１に治具３に収容され
たウェーハ２を入れた後、キャップ４で反応管１は密閉
し、真空ポンプ７を動作させて反応管１内の内圧を０．
３〜０．５Ｔｏｒｒに減圧させる。その後、ポンベ１０
内の７レオンガスを反応管１内に所定量ずつ供給すると
ともに、ＲＦ発生電源１４をｉｏｏｗで作動させて反応
管１内にプラズマを発生させ、ウエーノ・表層部のエツ
チング（プラズマエツチング）を行なう。たとえば、シ
リコン（Ｓｉ ）を５０００Ａ前後エツチングする場合
には４〜５分要し、クリコンナイトライド（Ｓｉ、Ｎ４
）をｚｏｏｏｉ前後エツチングする場合には２分装する
。Next, a plasma etching method using the above apparatus will be explained. First, after putting the wafer 2 housed in the jig 3 into the reaction tube 1, the reaction tube 1 is sealed with the cap 4, and the vacuum pump 7 is operated to reduce the internal pressure inside the reaction tube 1 to 0.
Reduce the pressure to 3-0.5 Torr. After that, Pombe 10
A predetermined amount of Leon gas is supplied into the reaction tube 1, and the RF generating power source 14 is operated at IOOW to generate plasma in the reaction tube 1 to perform etching (plasma etching) of the surface layer of the wafer. For example, when etching silicon (Si) at around 5000A, it takes 4 to 5 minutes.
) is divided into two parts when etching the front and back of the zoooi.
ところで、エツチング時にはラジカルな反応生成物（化
学種）が常に発生する。そして、これらの反応生成物の
一部はＳｉ、Ｓｉ、Ｎ４と反応し、エツチングを促進す
るが、一部はラジカルな状態から安定な状態に移行する
。この移行時に放出される光は物質によってその周波数
が特定される。By the way, radical reaction products (chemical species) are always generated during etching. A portion of these reaction products reacts with Si, Si, and N4 to promote etching, but a portion shifts from a radical state to a stable state. The frequency of the light emitted during this transition is determined by the substance.
そこで、この光をディテクタ１６によって放射スペクト
ルとして検出し、その光強度が弱まった時点で反応を終
了させる。たとえば、光強度は前記記録計によって第２
図で示すようなグラフに描かれる。このグラフで分かる
ように、エツチング反応時には多量の光を発てるため処
理前期および中期では光強度は強いが、処理後側では光
強度は急激に低下する。そして、１０時間（反応終点）
以後は光強度は極めて小さくなるとともに、その値はほ
ぼ一定となる。これは、ウエーノ・のエツチング処理が
終了したことを示す。なお、いつまでも光強度が低数値
を示す理由としては、不所望なウェーハ部分および反応
管内壁がエツチングされていることを示す。Therefore, this light is detected as a radiation spectrum by the detector 16, and the reaction is terminated when the light intensity weakens. For example, the light intensity can be measured by the recorder.
It is drawn in a graph as shown in the figure. As can be seen from this graph, a large amount of light is emitted during the etching reaction, so the light intensity is strong in the early and middle stages of the process, but the light intensity drops rapidly after the process. and 10 hours (reaction end point)
After that, the light intensity becomes extremely small and its value remains almost constant. This indicates that the Ueno etching process has been completed. The reason why the light intensity remains low is that undesired portions of the wafer and the inner wall of the reaction tube are etched.
そこで、光強度が弱まった１０時又はそれよりもわずか
に多い時間経た１３時に制御装置１８を用いて自動的に
プラズマエツチングを終了させる。Therefore, the plasma etching is automatically terminated using the control device 18 at 10 o'clock when the light intensity has weakened, or at 13 o'clock a little longer than that.
このようなプラズマエツチング装置によれば、エツチン
グ反応時に生ずる化学種が安定化への移行時に発生する
光を放射スペクトルとして検出し、かつその光強度が弱
まった時点で反応終点を検出している。したかって、常
に正確な反応終点を検出できるので、エツチング反応処
理終了時を適正、たとえば、１０時又は１３時に設定で
き、必要以上のエツチング過多やエツチング不足などは
生じな℃・。According to such a plasma etching apparatus, the light generated when the chemical species generated during the etching reaction transitions to stabilization is detected as a radiation spectrum, and the end point of the reaction is detected when the light intensity weakens. Therefore, since the end point of the reaction can always be detected accurately, the end time of the etching reaction process can be set appropriately, for example, at 10 o'clock or 13 o'clock, and excessive etching or insufficient etching will not occur.
つぎに、本発明の実施例に従ったプラズマエツチング装
置を説明する。この実施例は第３図に示すものであるが
、反応終点を検出するモニタ機構が前記第１図に示した
本発明の前提となった装置と異なるものである。そこで
、前記第１因の装置と同様な構造および作用をする各部
の説明は省略するが、説明上前記第１図の装置と同様な
名称および指示番号で示す。本発明の実施例では、反応
管１を両側から挾むように光源２０およびフォトセル等
からなるディテクタ２１を１個ずつ配設しておく。そし
て、光源２０から発した光をディテクタ２１で検出し、
この光が反応管１内のプラズマ中で吸収される程度を測
定する。丁なわち、エツチング反応時に発生するラジカ
ルな化学種が安定な状態に移行する際放出する光に対応
する周波数を有する光をプラズマ中に照射し、再び化学
種をラジカル化する。この際、光の一部はプラズマ中で
吸収され、この吸収度はエツチング反応時に強く、ウエ
ーノ・Ｋおけるエツチング反応が終了するにつれて弱く
なる。そこで、ディテクタ２１によって吸収スペクトル
の強度を測定し、記録計１９で第４図に示すようなグラ
フを描くとともに、グラフで示す１０時に制御装置１８
によってＲＦ発生電源１４を停止させてエツチング反応
を終了させる。また、全てのウエーノ・が確実にエツチ
ングされるように、反応終点（Ｔｏ）かられずかに時間
が経過したＴ１時にＲＦ発生亀源１４を停止させるよう
圧してもよい。Next, a plasma etching apparatus according to an embodiment of the present invention will be explained. This embodiment is shown in FIG. 3, but the monitoring mechanism for detecting the end point of the reaction is different from the device shown in FIG. 1, which is the premise of the present invention. Therefore, the description of each part having the same structure and function as the device of the first cause will be omitted, but for the sake of explanation, the same names and instruction numbers as those of the device of FIG. 1 will be used. In the embodiment of the present invention, one light source 20 and one detector 21 consisting of a photocell or the like are arranged so as to sandwich the reaction tube 1 from both sides. Then, the light emitted from the light source 20 is detected by the detector 21,
The degree to which this light is absorbed in the plasma within the reaction tube 1 is measured. That is, the plasma is irradiated with light having a frequency corresponding to the light emitted when the radical chemical species generated during the etching reaction transition to a stable state, thereby converting the chemical species into radicals again. At this time, part of the light is absorbed in the plasma, and this absorption is strong during the etching reaction and becomes weaker as the etching reaction in Ueno-K is completed. Therefore, the detector 21 measures the intensity of the absorption spectrum, the recorder 19 draws a graph as shown in FIG.
The RF generating power source 14 is stopped to complete the etching reaction. Further, in order to ensure that all of the wafer is etched, pressure may be applied to stop the RF generator 14 at time T1, which is a short time after the reaction end point (To).
このような実施例によれば、正確に反応終点を知ること
ができるので、正確確実なエツチング処理を施こすこと
ができるとともに、不良品をつくるようなこともなくな
る。According to such an embodiment, since the end point of the reaction can be accurately determined, the etching process can be performed accurately and reliably, and the production of defective products can be avoided.
なお、前記吸収スペクトルを検出する場合には、検出感
度を向上させるため、光源位置に鏡を設け、光の多重反
射を行なわせてプラズマ中での吸収強度を増大させて検
出するようにしてもよい。When detecting the absorption spectrum, a mirror may be provided at the light source position to increase the absorption intensity in the plasma by providing multiple reflections of the light in order to improve the detection sensitivity. good.
さらに、本発明はこの実施例に限定されない。Furthermore, the invention is not limited to this example.
以上のように、′本発明のプラズマエツチング装置によ
れば、全ての被処理物は正確確実にエッチングされ、エ
ツチング過多による不良品の発生は生じさせない。この
ため、歩留が向上する。また、エツチング不足も発生し
な℃・ので、従来のように、再度エツチングを行なうな
どの必要もなくなり、作業性が向上する。As described above, according to the plasma etching apparatus of the present invention, all objects to be processed can be etched accurately and reliably, and no defective products will be produced due to excessive etching. Therefore, the yield is improved. Further, since insufficient etching does not occur, there is no need to perform etching again as in the conventional method, and work efficiency is improved.
さらに、本発明の装置では、従来の質量分析装置を組み
込んだ装置に較べて機構および操作が簡単でかつ安価と
なるなどの効果も奏する。Furthermore, the apparatus of the present invention has advantages such as a simpler mechanism and operation and lower cost than an apparatus incorporating a conventional mass spectrometer.
第１図は本発明の前提となったプラズマエツチング装置
の概要を示す概要図、第２図はエツチング反応時に発せ
られる光の強度と反応時間との関係を示すグラフ、第３
図は本発明の実施例に用いるプラズマエツチング装置の
概要を示す概要図、第４図は反応雰囲気中に照射した光
の吸収層と反応時間との関係を示すグラフである。
１・・・反応管、２・・・ウェーハ、３・・・治具、４
・・・キヤツジ、５・・・排気管、６・・・ベント、７
・・・真空ポンプ、８・・・真空計、９・・・供給管、
１０・・・ボンベ、１１・・・流量調整パルプ、１２・
・・ストップバルブ、１３・・・ＲＦコイル、１４・・
・ＲＦ発生電源、１５・・・ＲＦマツチング機構、１６
・・・ディテクタ、１７・・・アンプ、１８・・・制御
装置、１９・・・記録計、２０・・・光源、２１・・・
ディテクタ。
代理人 弁理士 小 川 勝 男 （ゝ４、
第、Ｎ２１
ｉｔ
第 ４１！ｌ）FIG. 1 is a schematic diagram showing the outline of the plasma etching apparatus that is the premise of the present invention, FIG. 2 is a graph showing the relationship between the intensity of light emitted during etching reaction and reaction time, and FIG.
The figure is a schematic diagram showing the outline of the plasma etching apparatus used in the embodiment of the present invention, and FIG. 4 is a graph showing the relationship between the absorption layer of light irradiated into the reaction atmosphere and the reaction time. 1... Reaction tube, 2... Wafer, 3... Jig, 4
... Cat, 5... Exhaust pipe, 6... Vent, 7
...Vacuum pump, 8. Vacuum gauge, 9. Supply pipe,
10...Cylinder, 11...Flow rate adjustment pulp, 12.
...Stop valve, 13...RF coil, 14...
・RF generation power supply, 15...RF matching mechanism, 16
...Detector, 17...Amplifier, 18...Control device, 19...Recorder, 20...Light source, 21...
Detector. Agent: Patent Attorney Katsuo Ogawa (4th, N21 IT No. 41!l)
Claims (1)
チングすることができるプラズマエッチング装置におい
て、反応に関与する化学種の励起状態から安定状態に移
行する際に放出する光に対応する光をプラズマ中に照射
する照射部と、この照射部から照射される光の照射前の
強度とプラズマ透過後の強度とを比較検出する検出部と
、この検出部によって検出された信号を増幅する増幅部
と、この増幅部によって増幅された信号にもとずき高周
波発生電源を制御する制御部とを有するプラズマエッチ
ング装置。1. In a plasma etching apparatus capable of etching a target material on the surface of an article using plasma discharge, the plasma emits light corresponding to the light emitted when chemical species involved in a reaction transition from an excited state to a stable state. an irradiation section that irradiates the inside, a detection section that compares and detects the intensity of the light irradiated from the irradiation section before irradiation and the intensity after passing through the plasma, and an amplification section that amplifies the signal detected by the detection section. and a control section that controls a high frequency generation power source based on the signal amplified by the amplification section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26116885A JPS61166029A (en) | 1985-11-22 | 1985-11-22 | Plasma etching equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26116885A JPS61166029A (en) | 1985-11-22 | 1985-11-22 | Plasma etching equipment |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10060476A Division JPS5326674A (en) | 1976-08-25 | 1976-08-25 | Plasma etching |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61166029A true JPS61166029A (en) | 1986-07-26 |
| JPH0250618B2 JPH0250618B2 (en) | 1990-11-02 |
Family
ID=17358062
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26116885A Granted JPS61166029A (en) | 1985-11-22 | 1985-11-22 | Plasma etching equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61166029A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01108378A (en) * | 1987-10-21 | 1989-04-25 | Mitsubishi Electric Corp | Sputtering device |
-
1985
- 1985-11-22 JP JP26116885A patent/JPS61166029A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01108378A (en) * | 1987-10-21 | 1989-04-25 | Mitsubishi Electric Corp | Sputtering device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0250618B2 (en) | 1990-11-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2653566B2 (en) | Semiconductor substrate evaluation method and apparatus | |
| US6509960B2 (en) | Method and apparatus employing external light source for endpoint detection | |
| US6448097B1 (en) | Measure fluorescence from chemical released during trim etch | |
| KR0147041B1 (en) | Plasma-process system with batch scheme | |
| JPS61166029A (en) | Plasma etching equipment | |
| JPH0622217B2 (en) | Surface treatment apparatus and surface treatment method | |
| JPH1064884A (en) | Etching device and etching method | |
| JPH0868754A (en) | Measurement of transparency of monitoring window of internal phenomenon | |
| Tserepi et al. | Effects of surfaces on H‐atom concentration in pulsed and continuous discharges | |
| JPH06318560A (en) | Measurement of thermowaves | |
| JPH0261140B2 (en) | ||
| JPH0353200A (en) | Production of x-ray exposing device | |
| JPH0685023A (en) | Device for measuring minority carrier lifetime in semiconductor wafer | |
| JPS6251224A (en) | Ultraviolet ray cleaning monitoring | |
| JPH0737958A (en) | Monitoring apparatus for semiconductor treatment process | |
| JP2690572B2 (en) | Surface condition evaluation method and apparatus | |
| JPH0314229A (en) | End point detecting device | |
| JPH056873A (en) | Etching end-point detection method and etching apparatus | |
| JPS62282435A (en) | Method for detecting end point of etching | |
| JPH0722401A (en) | Plasma etching apparatus | |
| JPS63211633A (en) | Plasma etching device | |
| JPH11297629A (en) | Self-cleaning method for semiconductor manufacturing device and self-cleaning end judging device | |
| JPH0729954A (en) | Crystal defect measuring method | |
| JPH06151539A (en) | Evaluation for surface of semiconductor deivce | |
| RU2091905C1 (en) | Device for detecting end of dry etching process |